JP2009059737A - Silicone elastomer stamp and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To devise the structure of a silicone elastomer stamp where one or more irregular pattern are formed so that print resolution is improved greatly. <P>SOLUTION: For the silicone elastomer stamp where one or more irregular pattern is formed, a support pattern is provided at a location adjacent to its projection, the support pattern is provided at a location where an aspect ratio b/a is ≥1 while the line width of the projection to be supported is set to a and the height of the projection of the stamp is set to b, and the line width of the projection where the support pattern is supported is greater than a. Further the silicone elastomer stamp is made of polydimethylsiloxane. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

  The present invention relates to a microcontact printing (hereinafter also referred to as μCP) method, and more particularly, a silicone elastomer stamp design / pattern layout method and a stamp production technique useful for μCP, particularly a silicone elastomer stamp. In addition, the present invention relates to an organic transistor using μCP, a manufacturing method thereof, and a display device using the same, which eliminates the problem of inking and increases the printing resolution. Is something that can be done.

  With the progress of computerization, the development of thin and light electronic paper that replaces paper and ID tags that can instantly identify each product has attracted attention. At present, thin film transistors (TFTs) using amorphous silicon (a-Si) or polycrystalline silicon (p-Si) as semiconductors are used as switching elements in these devices. However, the production of thin film transistors using these silicon-based semiconductors requires expensive plasma chemical vapor deposition (CVD) equipment, sputtering equipment, etc., which incurs manufacturing costs. In addition, vacuum processes and photolithography are required. Since there are a number of processes such as processing, there is a problem that the throughput is low. Furthermore, existing silicon thin film transistors have a problem that they cannot be used because they are easily crushed by an external impact and are produced by a high temperature process of 300 ° C. or higher. For this reason, organic thin-film transistors using an organic material as a semiconductor layer, which can be applied to print formation such as soft lithography and can provide a product at low cost, have attracted attention.

  In a conventional organic thin film transistor, a gate electrode is provided on a substrate, a gate insulating film is formed thereon, a source electrode and a drain electrode are provided on the substrate, and the source electrode, the drain electrode, and the gate insulating film are further provided. In addition, an organic semiconductor layer is laminated, and a channel is formed in the lateral direction between the source electrode and the drain electrode. When a voltage (source-drain voltage) is applied between the source electrode and the drain electrode of the organic thin film transistor and the voltage applied to the gate electrode (gate voltage: Vg) is changed, the organic semiconductor depends on the gate voltage. The amount of charge at the interface between the layer and the gate insulating film changes, and the current (source-drain current) flowing through the portion (channel) of the organic semiconductor layer between the source electrode and the drain electrode can be changed. Thus, in the organic thin film transistor, the drain current Id obtained from the drain electrode can be controlled by controlling the gate voltage.

Here, the gain gm of the organic thin film transistor, that is, the change of the drain current (dId / dVg) with respect to the change of the gate voltage is expressed by the following equation when the channel through which the source-drain current flows is rectangular.
gm = W / L · ε0ε / d (Vg−VT) (1)
Where W is the channel width, L is the channel length, ε0 is the vacuum dielectric constant, ε is the relative dielectric constant of the insulating film, d is the thickness of the gate insulating film, and is the carrier movement Degree, and VT is a threshold voltage.
According to Equation (1), the larger the ratio W / L of the channel width W to the channel length L, the larger the gain of the organic thin film transistor, and the faster the transistor.
In view of the above, it is essential to develop an excellent soft lithography technique that can precisely define the channel length L of the organic thin film transistor.

  The micro contact print (μCP) is a technique for forming a pattern of an organic monomolecular layer having a lateral dimension of μm to sub μm. For example, a known microcontact print as described in JP-A-2005-129791 is known. It has been studied using methods and equipment.

  Described in the above publication is a microcontact printing method for constructing a nanostructure, in which a first station and a second station arranged side by side, a moving body moving between them, and any one of them A light source device that can be placed in a station, and a sample is exposed using the light source device in one of the stations, a stamp master is produced, and a stamp duplicated from the master is placed on the moving body; The ink is replenished by bringing the stamp into and out of the station at the station, and the uneven pattern of the stamp is obtained by bringing the stamp into and out of the sample placed there at either station. Is transferred to a sample.

  The conventional μCP technology relied on the significant ability of alkylthiol self-aligned monolayers formed on metals such as gold. These patterns P can function as nm-order resists by selectively protecting the supporting metal from corrosion by appropriately formulated etchants, or selectively place fluid on the hydrophilic regions of the pattern P. . Self-aligned monolayers with dimensions of less than 1 μm are formed by printing on a substrate using an alkanethiol as the “ink” and using an elastomeric “stamp”. This stamp is manufactured by molding a silicone elastomer using a mother mold manufactured by a technique such as photolithography.

  In the past application of μCP, a stamp formed by patterning a polydimethylsiloxane (PDMS) elastomer as a silicone elastomer in a mold is used. After curing, the PDMS stamp holds a negative image of the mold pattern and can be used for a series of inking and printing. That is, the stamp must have an accurate pattern and be stable during inking, printing, and peeling from the surface (eg mold), but not soft enough to adhere to the substrate to be applied. Don't be. In addition, the stamp must be easy to manufacture and operate. Silicone elastomers as stamp materials meet the above requirements.

[Problems of the prior art]
In the conventional μCP, ink 2 is prepared on the ink base 1 and the stamp 3 is lowered and raised to attach the ink 2 to the stamp 3 and transfer the ink 2 to a separately prepared substrate or the like. However, in printing using a silicone elastomer stamp, there is a problem that printing failure occurs in a high-resolution thin line area (see FIG. 1). Specifically, when the pattern resolution (thin line width) a is printed, if the aspect ratio b / a between the line width a and the height b of the convex part P1 of the concave-convex pattern P of the stamp is small, the pattern is schematically shown in FIG. As shown in the drawing, ink is supplied to the concave portion at the time of inking, and there is a problem that the unnecessary ink 5 is attached in addition to the necessary ink 4 and the printing resolution is lowered. Such a phenomenon is more likely to occur as the ink has a lower viscosity, and more likely to occur as the gap is narrower.

By the way, if the aspect ratio b / a is increased, the above-mentioned problems at the time of inking can be solved. However, as a result, the silicone elastomer stamp is deformed as shown in FIG. There is another defect that causes defects.
JP 2005-129791 A

  An object of the present invention is to devise the structure of a silicone elastomer stamp on which one or more concavo-convex patterns are formed so that the printing resolution can be greatly increased.

Means for solving the above-mentioned problem is to provide a support pattern at a location adjacent to the convex portion of the silicone elastomer stamp on which one or more concave-convex patterns are formed,
Further, the support pattern is provided at a place where the aspect ratio b / a, which is the line width a of the supported convex portion and the height b of the convex portion of the stamp, is 1 or more,
Moreover, it is larger than the line width a of the convex part by which the said support pattern is supported.
Furthermore, the silicone elastomer stamp is made of polydimethylsiloxane.

The present invention is summarized as follows for each invention of each claim.
(1) Invention of Claim 1 In the silicone elastomer stamp in which one or more concavo-convex patterns are formed, the problem of inking is obtained by providing a support pattern at a location adjacent to the convex portion of the silicone elastomer stamp. Can be suppressed, and deformation of the convex portion of the stamp due to the printing pressure during printing can be prevented, so that a silicone elastomer stamp with high printing resolution can be obtained.

(2) Invention of Claim 2 By providing the said support pattern in the location where the aspect ratio b / a which made the line width a of the convex part supported, and the height b of the convex part of a stamp 1 or more is provided,
Inking can be performed where necessary, and a silicone elastomer stamp with high printing resolution can be obtained.
In the case of silicone elastomer stamps, if the aspect ratio is less than 1, ink is supplied to the recess when inking, and there is a problem that unnecessary ink is attached and the resolution of printing is reduced. The tendency to print fresh ink is remarkable. On the other hand, if it is larger than 1, there is a problem that the silicone elastomer stamp is deformed due to the printing pressure applied at the time of printing, resulting in defective printing. Therefore, it is effective to provide a support pattern adjacently. Although the problem of printing unnecessary ink is reduced, the above-described tendency of the deformation of the stamp is significant. As described above, if the aspect ratio is too large, deformation of the stamp becomes large. Therefore, the upper limit is practically about an aspect ratio of 5 (depending on the resolution).

(3) Invention of Claim 3 Since the said support pattern is larger than the line width a of the convex part supported, the deformation | transformation of the convex part which requires resolution can be suppressed, and a silicone elastomer with high printing resolution・ You can get a stamp.

(4) Invention of Claim 4 The above-mentioned silicone elastomer stamp is made of polydimethylsiloxane, so that the silicone elastomer with high printing resolution capable of flexographic printing adapted to the substrate by utilizing the softness of the stamp. You can get a stamp.

(5) Invention of Claim 5 By manufacturing the said support pattern and the said convex part supported collectively, a stamp preparation process can be shortened and a silicone elastomer stamp with high printing resolution can be obtained at low cost. it can.

(6) The invention of claim 6 By performing imprint technology to duplicate the support pattern and the supported convex portion, a stamp production process can be shortened, and a silicone elastomer stamp with high printing resolution can be obtained at low cost. Obtainable.

(7) Invention of Claim 7 By performing the formation of the support pattern and the duplicate pattern of the supported convex portion by a micro contact printing (μCP) apparatus, plate making and printing by the same equipment can be performed, Silicone elastomer stamps with high printing resolution can be obtained at low cost.

(8) Invention of Claim 8 Since the hydrophilic ink can be used by inactivating the entire surface after forming the hydrophilic polymer layer, the printing resolution of the silicone elastomer stamp is high.

(9) Invention of Claim 9 By manufacturing a thin film transistor in which a gate electrode, a gate insulating film, a source / drain electrode, and a semiconductor layer are sequentially laminated on an insulating substrate by μCP using the silicone elastomer stamp, A thin film transistor with a short channel length and a high operating frequency can be obtained. In particular, the channel portion between the source electrode and the drain electrode can be precisely controlled.

(10) The invention of claim 10 includes a plurality of gate wirings, insulating films, a plurality of signal wirings, protective films, and pixel electrodes intersecting the gate wirings in a matrix, and the plurality of gate wirings and signal wirings The thin film transistor according to claim 9 is arranged at an intersection, the gate wiring and the gate electrode are connected, the signal wiring and the source electrode are connected, and the pixel electrode and the drain electrode are connected, so that the operating frequency is high. An active matrix thin film transistor array having thin film transistors and small pixel variation can be obtained.

(11) Invention of Claim 11 By driving a display element using the active matrix type thin film transistor array of Claim 10, an active matrix drive display device with small pixel variation can be obtained.

Next, embodiments of the present invention will be described with reference to the drawings.
[Example 1]
A cross-sectional structure of the thin film transistor 6 used in Example 1 is shown in FIG. The thin film transistor 6 includes an insulating substrate 7, a gate electrode 8, a gate insulating film 9, a source electrode 10, a drain electrode 11, and a semiconductor layer 12.

(1) Shape Dimensions of Thin Film Transistor 6 Gate electrode width: 20 μm, gate electrode thickness: 100 nm, gate insulating film thickness: 200 nm, source electrode thickness: 50 nm, drain electrode thickness: 50 nm, channel length: 5 μm.

(2) Configuration and operation of thin film transistor 6 manufacture A polycarbonate film having a thickness of 50 μm was used as the insulating substrate 7, and a chromium film having a thickness of 100 nm was formed thereon by sputtering, and then a gate electrode 8 having a width of 5 μm was formed by photolithography. . Next, a 200 nm-thick polyimide film was formed by spin coating, and baked at 150 ° C. to form the gate insulating film 9. Next, polythiophene was drawn on the channel portion with an ink jet apparatus to form the semiconductor layer 12.

  Next, the source electrode 10 and the drain electrode 11 were formed by μCP using nano Ag ink of an alcohol solvent. FIG. 4 shows a schematic diagram of the stamp for μCP. In the μCP stamp used in Example 1, the convex part P1 of the pattern P of the stamp base material 13 has various line widths a of 2 to 50 μm and a height b of 10 μm. A support pattern 14 having a line width of 10 μm is provided adjacent to the protrusion P1 having a line width a of less than 10 μm and an aspect ratio b / a of 1 or more.

The outline of the process for applying ink to the μCP stamp is as shown in FIG. 4. Here, ink 2 is prepared on the ink table 1, and the μCP stamp is lowered and raised, whereby the ink 2 is removed from the μCP stamp. Be attached to.
FIG. 5 shows an outline of a process for forming (transferring) the source electrode 10 and the drain electrode 11 on the thin film transistor 6. The ink applied to the stamp is transferred by contact using the method shown in FIG.

(3) Manufacturing method of stamp for μCP used in Example 1 The stamp base material 13 is a reverse copy of a resist pattern manufactured on a μCP apparatus using a photomask with PDMS (polydimethylsiloxane). It is produced by a method of polymerization by printing. The stamp for μCP used in this example is provided with a support pattern 14 at a place where the aspect ratio b / a of the line width a of the supported convex portion P1 and the height b of the convex portion of the stamp is 1 or more, And it has the structure larger than the line width a of the convex part P1 in which the support pattern 14 is supported. By having the support pattern 14 as described above, it is possible to realize high-resolution printing in which unnecessary inking is prevented and deformation of the convex portion due to printing pressure is suppressed.
In Example 1, the thin film transistor 6 was manufactured by using the stamp for μCP prepared by the method described above.

  As in Example 1, the channel between the source electrode 10 and the drain electrode 11 is precisely controlled by providing the support pattern 14 at a location adjacent to the convex portion P1 having an aspect ratio of 1 or more. Large thin film transistors can be manufactured. As a result, the gap control between the source electrode 10 and the drain electrode 11 can be made high resolution in the thin film transistor having the bottom gate / top contact structure as in this embodiment. Further, since the portion transferred by the support pattern 14 is not connected to a signal wiring which will be described later, problems such as wiring defects do not occur. Also in the case of configuring a transistor array, a support pattern can be partially provided as long as the above-described deformation of the convex portion can be suppressed.

[Comparative example]
As a comparative example, FIG. 6 shows an example in which μCP is performed using a stamp without a support pattern. In this comparative example, the convex portion P1 of the pattern P was deformed by the printing pressure applied during printing, and as a result, a thin film transistor in which the channel portion between the source electrode 10 and the drain electrode 11 was short-circuited.

  In Example 1, polydimethylsiloxane was used as the base material for the silicone elastomer stamp, but diethylsiloxane, diphenylsiloxane, methylvinylsiloxane, ethylvinylsiloxane, phenylvinylsiloxane, ethylmethylsiloxane, methylphenylsiloxane, ethylphenylsiloxane, etc. Can be applied.

  In Example 1, a polycarbonate film was used for the insulating substrate 7, but any other material can be selected from a wide range as long as it is insulating and has heat resistance against the process temperature. Specifically, inorganic materials such as glass, quartz, alumina sintered bodies, insulating plastics such as polyimide films, polyester films, polyethylene films, polyphenyllene sulfide films, polyparaxylene films, and these inorganic materials and insulating plastics A hybrid substrate or the like in combination can be used.

  In Example 1, chromium was used for the gate electrode 8, but tantalum, aluminum, gold, silver, copper, platinum, palladium, chromium, molybdenum, nickel and the like, alloys using these metals, polyaniline, polypyrrole, poly- Conductive polymers such as 3,4-ethylenedioxythiophene (PEDOT) can be used. In this embodiment, the gate electrode 8 is formed by photolithography after the sputter film formation, but it is also possible to use an ink jet method or a printing method.

In the first embodiment, polyimide is used for the gate insulating film 9, but when tantalum or aluminum is used for the gate electrode 8, for example, tantalum oxide or aluminum oxide obtained by anodizing the gate electrode 8 may be used. Alternatively, SiN, SiO ₂ or the like may be formed by CVD. Moreover, you may apply | coat polyvinyl phenol (PVP), polyvinyl alcohol (PVA), a silicon oxide, etc., and you may bake at 100 to 200 degreeC.

  In Example 1, nano-Ag ink of alcohol solvent was used for the source electrode 10 and the drain electrode 11, but in addition to PEDOT / PSS ink dispersed in water, gold, silver, copper, platinum, palladium, chromium, molybdenum, ITO Etc.

  In Example 1, polythiophene was used for the semiconductor layer 12. However, as a low molecular system, pentacene, an acene-based material represented by a thiophene oligomer, and as a high molecular system, polythiophene-based poly-3, hexylthiophene (P3HT) In the polyfluorene system, a fluorene-bithiophene (F8T2) copolymer, polyphenylene vinylene (PPV), or the like can also be used.

  In Example 1, a bottom gate / top contact thin film transistor is employed. However, the present invention is not based on the transistor structure, and a stamp provided with a support pattern at a location adjacent to the convex portion of the silicone elastomer stamp is used. Since the thin film transistor is formed using μCP, any transistor structure such as a bottom gate / bottom contact structure, a top gate / bottom contact, a top gate / top contact, and the like can be applied.

[Example 2]
Next, Example 2 will be described.
FIG. 7 shows a plan view of an active matrix thin film transistor array using the thin film transistor of Embodiment 1 as an active element, and FIG. 8 shows a schematic view including a circuit.
On the insulating substrate 7, m gate scanning lines 15 are arranged in the horizontal direction, n signal lines 16 are arranged in the vertical direction, and the thin film transistor according to the first embodiment is arranged at the intersections arranged in a matrix. The gate electrode 8 of each thin film transistor is connected to the gate scanning wiring 15, the source electrode 10 is connected to the signal wiring 16, and the drain electrode 11 is a via hole (via) opened in the passivation film (interlayer insulating film) 17. hole) 18 and connected to the pixel electrode 19. The gate scanning line 15 is formed together with the gate electrode 8, and the signal line 16 is formed together with the source electrode 10 and the drain electrode 11. In addition to the drain electrode 11, the via hole 18 of the passivation film 17 opens to the terminal portion 20 of each gate scanning wiring 15 and the terminal portion 21 of each signal wiring 16.

  FIG. 9 shows a cross-sectional view of the main component configuration of an electrophoretic display device using the active matrix thin film transistor array 22 of the second embodiment. A gate scanning circuit 23 is connected to the terminal section 20 of the gate scanning wiring of the active matrix thin film transistor array 22, a signal circuit 24 is connected to the terminal section 21 of the signal wiring, and both circuits are connected to the control circuit 25.

  In the display unit, a transparent electrode 26 provided to face the pixel electrode 19 is disposed. That is, the transparent electrode 26 constitutes a counter electrode facing each pixel electrode 19, and there is an electrophoretic dispersion layer 27 between the transparent electrode 26 and the pixel electrode 19, and the electrophoretic dispersion layer 27 is dispersed in the electrophoretic dispersion layer 27. It consists of light reflecting electrophoretic particles 28 and light absorbing electrophoretic particles 29.

  The transparent electrode 26 is light transmissive, preferably substantially transparent (colorless transparent, colored transparent or translucent). Thereby, the states of the light reflecting electrophoretic particles 28 and the light absorbing electrophoretic particles 29 in the electrophoretic dispersion layer 27, that is, the displayed desired information can be easily recognized visually.

The electrophoretic display device of Example 2 operates as follows.
The thin film transistor 6 connected to the gate scanning line 15 / gate electrode 8 to which the scanning voltage output from the gate scanning circuit 23 is applied operates, and the pixel electrode 19 connected to the thin film transistor 6 is synchronized with the scanning voltage. Then, the signal voltage supplied from the signal circuit 24 is applied, the electrophoretic particles are driven in a so-called line-sequential manner, and the display device operates in such a manner that the amount of reflected light of each pixel changes. This display device can be applied to a flexible display such as an electronic paper as well as a flat panel display such as a mobile phone, a digital camera, a flat TV, and a notebook PC.

  Examples of the material of the pixel electrode 19 include metals such as aluminum, nickel, cobalt, platinum, gold, silver, copper, molybdenum, titanium, and tantalum, and alloys containing these, and one kind of these. Alternatively, two or more kinds can be used in combination.

The transparent electrode 26 functions as the other electrode for applying a voltage to the electrophoretic dispersion layer 27, and has a film shape (film shape).
As a constituent material of the transparent electrode 26, for example, in addition to conductive metal oxides such as indium tin oxide (ITO), fluorine-doped tin oxide (FTO), indium oxide (IO), tin oxide (SnO ₂ ), Examples thereof include conductive resins such as polyacetylene, conductive resins containing conductive metal fine particles, and the like, and one or more of these can be used in combination.

  As the electrophoretic dispersion layer 27, an organic solvent having a relatively high insulating property can be used. Examples of the organic solvent include aromatic hydrocarbons such as toluene, xylene and alkylbenzene, aliphatic hydrocarbons such as pentane, hexane and octane, alicyclic hydrocarbons such as cyclohexane and methylcyclohexane, and methylene chloride. , Halogenated hydrocarbons such as chloroform, carbon tetrachloride, 1,2-dichloroethane, various mineral oils such as silicon oil, fluorine oil, olive oil and vegetable oils, higher fatty acid esters, etc. It can be used by mixing.

  As the electrophoretic particles, titanium oxide is used as the light-reflecting electrophoretic particles 28 and carbon black is used as the light-absorbing electrophoretic particles 29. However, organic or inorganic particles or a composite containing them can be used. . Examples of the particles include black particles such as aniline black and carbon black, and white particles such as titanium dioxide, zinc white, and antimony trioxide. Furthermore, for colorization, azo particles such as monoazo, diisazone and polyazo, yellow particles such as isoindolinone, yellow lead, yellow iron oxide, cadmium yellow, titanium yellow and antimony, quinacridone red, chrome vermilion Red particles such as phthalocyanine blue, indanthrene blue, anthraquinone dyes, blue particles such as bitumen, ultramarine blue and cobalt blue, and green particles such as phthalocyanine green.

In Example 2, the electrophoretic dispersion layer 27 is used. However, the present invention can be applied to a system in which a dispersion liquid and electrophoretic particles are included in a microcapsule.
Although the second embodiment is a monochrome display, it can also be used as a color display through a color filter or the like, for example.

Example 3
Next, Example 3 will be described.
The third embodiment uses a thin film transistor 6 similar to that of the first embodiment although the printing material is different from that of the first embodiment (see FIGS. 3 and 5).
The configuration and operation of the thin film transistor 6 in Example 3 are as described below, but the configuration and operation up to the semiconductor layer 12 are the same as in Example 1.
First, a source electrode using an ink in which PEDOT (poly-3,4-ethylenedioxythiophene) doped with PSS (polystyrene sulfonic acid), which is a conductive polymer, is dispersed in ultrapure water by the μCP method. 10 and the drain electrode 11 were formed.

  Here, the stamp base material 13 is a reverse copy (polymerization by thermal imprinting in a mold) of a resist pattern produced on a μCP apparatus using a photomask with PDMS (polydimethylsiloxane), and then the stamp base material 13 It was produced by a method of inactivation treatment by irradiating the surface with excimer UV light.

The stamp for μCP used in Example 3 is provided with a support pattern 14 at a location where the aspect ratio b / a of the line width a of the supported convex portion and the height b of the convex portion of the stamp is 1 or more, and The line width of the support pattern 14 is larger than the line width a of the convex part to be supported. By having the support pattern as described above, it is possible to realize high-resolution printing in which unnecessary inking is prevented and deformation of the convex portion due to printing pressure is suppressed.
In Example 3, the thin film transistor 6 was manufactured by using the stamp for μCP prepared by the method described above.

  According to Embodiment 3, a thin film transistor having a high operating frequency in which a channel portion between the source electrode 10 and the drain electrode 11 is precisely controlled can be manufactured. Furthermore, the surface of the stamp base material 13 is inactivated so that hydrophilic ink can be printed with high resolution by μCP.

Is a cross-sectional view schematically showing the problems of the prior art Figure 2 is a cross-sectional view schematically showing another problem in the prior art FIG. 3 is a cross-sectional view of a thin film transistor used in Example 1 Is a schematic diagram of μCP stamp Fig. 4 is a schematic diagram of a process for forming (transferring) a source electrode and a drain electrode on a thin film transistor. FIG. 4 is a cross-sectional view schematically showing a comparative example in which μCP is performed using a stamp without a support pattern. FIG. 3 is a plan view of an active matrix thin film transistor array using the thin film transistor of Example 1 as an active element. FIG. 1 is a schematic diagram including a circuit of an active matrix type thin film transistor array using the thin film transistor of Example 1 as an active element. FIG. 3 is a cross-sectional view of the main component configuration of an electrophoretic display device using an active matrix thin film transistor array of Example 2.

Explanation of symbols

a: Line width of convex part of pattern b: Height of convex part of pattern P: Pattern P1: Convex part 1: Ink stand 2: Ink 3: Stamp 4: Necessary ink 5: Unnecessary ink 6: Thin film transistor 7 : Insulating substrate 8: gate electrode 9: gate insulating film 10: source electrode 11: drain electrode 12: semiconductor layer 13: stamp base material 14: support pattern 15: gate scanning wiring 16: signal wiring 17: passivation film 18: via hole 19 : Pixel electrode 20: gate scanning wiring terminal portion 21: signal wiring terminal portion 22: active matrix type thin film transistor array 23: gate scanning circuit 24: signal circuit 25: control circuit 26: transparent electrode 27: electrophoresis dispersion liquid layer 28 : Electrophoretic particles for light reflection 29: electrophoretic particles for light absorption

Claims (11)

In silicone elastomer stamps with one or more relief patterns,
A silicone elastomer stamp, wherein a support pattern is provided at a location adjacent to the convex portion of the silicone elastomer stamp.   2. The silicone elastomer according to claim 1, wherein the support pattern is provided in a portion having an aspect ratio b / a of 1 or more, in which the line width a of the convex portion to be supported and the height b of the convex portion of the stamp are set. ·stamp.   The silicone elastomer stamp according to claim 1 or 2, wherein the support pattern is larger than a line width a of a convex portion to be supported.   4. The silicone elastomer stamp according to claim 1, wherein the silicone elastomer stamp is made of polydimethylsiloxane.   5. The method for producing a silicone elastomer stamp according to claim 1, wherein the supporting pattern and the supported convex portion are collectively formed.   5. The method for producing a silicone elastomer stamp according to claim 1, wherein the support pattern and the supported convex portion are duplicated by an imprint technique.   5. The method for producing a silicone elastomer stamp according to claim 1, wherein the support pattern and the duplicate pattern of the supported convex portion are formed by a micro contact printing (μCP) apparatus.   The method for producing a silicone elastomer stamp according to claim 1, wherein after the formation of the support pattern and the supported convex portion, the entire surface is subjected to an inactivation treatment.   A thin film transistor in which a gate electrode, a gate insulating film, a source / drain electrode, and a semiconductor layer are sequentially stacked on an insulating substrate manufactured by microcontact printing (μCP) using the silicone elastomer stamp.   10. The device according to claim 9, further comprising a plurality of gate wirings, an insulating film, a plurality of signal wirings, a protective film, and a pixel electrode that intersect the gate wirings in a matrix, and at the intersections of the plurality of gate wirings and signal wirings. An active matrix thin film transistor array, comprising: a thin film transistor; the gate wiring and the gate electrode are connected; the signal wiring and the source electrode are connected; and the pixel electrode and the drain electrode are connected.   An active matrix driving display device, wherein a display element is driven using the active matrix thin film transistor array according to claim 10.

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