JP2011042537A - カルコゲン化合物粉、カルコゲン化合物ペースト及びカルコゲン化合物粉の製造方法 - Google Patents

カルコゲン化合物粉、カルコゲン化合物ペースト及びカルコゲン化合物粉の製造方法 Download PDF

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Publication number
JP2011042537A
JP2011042537A JP2009192460A JP2009192460A JP2011042537A JP 2011042537 A JP2011042537 A JP 2011042537A JP 2009192460 A JP2009192460 A JP 2009192460A JP 2009192460 A JP2009192460 A JP 2009192460A JP 2011042537 A JP2011042537 A JP 2011042537A
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JP
Japan
Prior art keywords
chalcogen compound
powder
compound powder
less
chalcogen
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP2009192460A
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English (en)
Japanese (ja)
Other versions
JP2011042537A5 (enExample
Inventor
Yuichi Ishikawa
石川雄一
Tsuyoshi Fujino
藤野剛聡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dowa Holdings Co Ltd
Original Assignee
Dowa Holdings Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dowa Holdings Co Ltd filed Critical Dowa Holdings Co Ltd
Priority to JP2009192460A priority Critical patent/JP2011042537A/ja
Priority to PCT/JP2010/063598 priority patent/WO2011021546A1/ja
Publication of JP2011042537A publication Critical patent/JP2011042537A/ja
Publication of JP2011042537A5 publication Critical patent/JP2011042537A5/ja
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/14—Shape of semiconductor bodies; Shapes, relative sizes or dispositions of semiconductor regions within semiconductor bodies
    • H10F77/147—Shapes of bodies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C01B19/002—Compounds containing, besides selenium or tellurium, more than one other element, with -O- and -OH not being considered as anions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
    • C01P2002/85—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by XPS, EDX or EDAX data
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
JP2009192460A 2009-08-21 2009-08-21 カルコゲン化合物粉、カルコゲン化合物ペースト及びカルコゲン化合物粉の製造方法 Withdrawn JP2011042537A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009192460A JP2011042537A (ja) 2009-08-21 2009-08-21 カルコゲン化合物粉、カルコゲン化合物ペースト及びカルコゲン化合物粉の製造方法
PCT/JP2010/063598 WO2011021546A1 (ja) 2009-08-21 2010-08-04 カルコゲン化合物粉、カルコゲン化合物ペースト及びカルコゲン化合物粉の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009192460A JP2011042537A (ja) 2009-08-21 2009-08-21 カルコゲン化合物粉、カルコゲン化合物ペースト及びカルコゲン化合物粉の製造方法

Publications (2)

Publication Number Publication Date
JP2011042537A true JP2011042537A (ja) 2011-03-03
JP2011042537A5 JP2011042537A5 (enExample) 2012-08-02

Family

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JP2009192460A Withdrawn JP2011042537A (ja) 2009-08-21 2009-08-21 カルコゲン化合物粉、カルコゲン化合物ペースト及びカルコゲン化合物粉の製造方法

Country Status (2)

Country Link
JP (1) JP2011042537A (enExample)
WO (1) WO2011021546A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012197199A (ja) * 2011-03-22 2012-10-18 Dowa Electronics Materials Co Ltd セレン化銅粒子粉末およびその製造方法
JP2012206899A (ja) * 2011-03-30 2012-10-25 Dowa Electronics Materials Co Ltd セレン化銅粒子粉末およびその製造方法
JP5497160B2 (ja) * 2010-12-07 2014-05-21 Ｄｏｗａホールディングス株式会社 カルコゲン化合物粉、カルコゲン化合物ペースト、カルコゲン化合物粉の製造方法、カルコゲン化合物ペーストの製造方法およびカルコゲン化合物薄膜の製造方法
US9334559B2 (en) 2010-06-29 2016-05-10 Kobelco Research Institute, Inc. Powder, sintered body and sputtering target, each containing elements of Cu, In, Ga and Se, and method for producing the powder

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5356839A (en) * 1993-04-12 1994-10-18 Midwest Research Institute Enhanced quality thin film Cu(In,Ga)Se2 for semiconductor device applications by vapor-phase recrystallization
JP2732352B2 (ja) * 1994-02-14 1998-03-30 勝昭 佐藤 カルコパイライト型化合物の薄膜の作製方法
SI1548159T1 (sl) * 2003-12-22 2006-08-31 Scheuten Glasgroep Bv Postopek za pripravo Cu(In,Ga)Se2 monokristalnegapraska in soncna celica z monozrnato membrano, kiobsega ta prasek

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9334559B2 (en) 2010-06-29 2016-05-10 Kobelco Research Institute, Inc. Powder, sintered body and sputtering target, each containing elements of Cu, In, Ga and Se, and method for producing the powder
JP5497160B2 (ja) * 2010-12-07 2014-05-21 Ｄｏｗａホールディングス株式会社 カルコゲン化合物粉、カルコゲン化合物ペースト、カルコゲン化合物粉の製造方法、カルコゲン化合物ペーストの製造方法およびカルコゲン化合物薄膜の製造方法
JP2012197199A (ja) * 2011-03-22 2012-10-18 Dowa Electronics Materials Co Ltd セレン化銅粒子粉末およびその製造方法
JP2012206899A (ja) * 2011-03-30 2012-10-25 Dowa Electronics Materials Co Ltd セレン化銅粒子粉末およびその製造方法

Also Published As

Publication number Publication date
WO2011021546A1 (ja) 2011-02-24

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