JP2011035082A - Optical semiconductor device, and method for manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a thin optical semiconductor device having high light extraction efficiency. <P>SOLUTION: A method for manufacturing an optical semiconductor device includes: a first step of forming a plurality of first and second conductive members disposed separately from each other on a support substrate, and covering parts of upper surfaces of the first and second conductive members with protective films; a second step of forming a base substance containing a light shielding thermosetting resin between the first and second conductive members; a third step of removing the protective films, placing an optical semiconductor element on the first and/or second conductive members in which the protective films are removed, and covering the optical semiconductor element with a sealing member formed of a translucent resin; a fourth step of removing the support substrate; and a fifth step of making the optical semiconductor element into an individual piece to obtain an optical semiconductor device. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to an optical semiconductor device and a method for manufacturing the same.

  2. Description of the Related Art In recent years, various electronic semiconductor devices such as optical semiconductor devices (light-emitting diodes) and light-receiving devices (CCD) mounted on the electronic devices have been developed in accordance with miniaturization and weight reduction of electronic devices. In these optical semiconductor devices, for example, optical semiconductor elements such as a light emitting element and a light receiving element are placed on a double-sided through-hole printed circuit board having a pair of metal conductor patterns formed on both sides of an insulating substrate, and a wire or the like. Is used to electrically connect the metal conductor pattern and the optical semiconductor element.

  However, since the double-sided through-hole printed circuit board has a thickness of at least about 0.1 mm, it is a factor that hinders a thorough thinning of the surface-mount type optical semiconductor device. For this reason, an optical semiconductor device having a structure that does not use such a printed circuit board has been developed (for example, Patent Document 1).

The optical semiconductor device disclosed in Patent Document 1 is formed by forming a thin metal film on a substrate by vapor deposition or the like, using this as an electrode, and sealing it with a light-transmitting resin together with a light-emitting element. Thinning is possible compared with an optical semiconductor device.
However, since only the translucent resin is used, light is emitted from the light emitting element toward the bottom surface, and the light extraction efficiency is likely to be reduced. Further, when used for a display or the like, contrast tends to deteriorate.

Patent Document 1 discloses a structure in which light is reflected by providing irregularities on a substrate and providing a bowl-shaped metal film on the irregular surface.
However, along with the downsizing of optical semiconductor devices, the unevenness of the substrate becomes extremely fine, which makes it difficult to process, and the uneven structure easily breaks when the substrate is peeled off, resulting in a decrease in yield. Is likely to occur.

On the other hand, as an example of an encapsulating resin for an optical semiconductor device, a reflector made of a thermoplastic resin is conventionally disposed on the outer periphery of the optical semiconductor element, and also on a part of the lead frame surface on which the optical semiconductor element is placed. An optical semiconductor device in which a part of the optical semiconductor device is arranged has been proposed (for example, Patent Document 2).
Such a reflector is usually formed by injecting a lead frame sandwiched between injection tools, but a thermoplastic resin can be formed only with a certain thickness in terms of flow characteristics. Therefore, there is a problem that it is not possible to satisfactorily satisfy recent demands for downsizing and weight reduction of the optical semiconductor element itself.

JP 2005-79329 A Japanese translation of PCT publication No. 2002-520823

  The present invention has been made in view of the above problems, and an object of the present invention is to provide an optical semiconductor device manufacturing method and an optical semiconductor device that can improve light extraction efficiency and can be further reduced in size and weight. And

The method for manufacturing an optical semiconductor device of the present invention includes:
Forming a first conductive member and a second conductive member spaced apart from each other on a support substrate, and covering at least a part of the top surfaces of the first and second conductive members with a protective film;
A second step of forming a substrate containing a light-shielding thermosetting resin between the first and second conductive members;
The protective film is removed, an optical semiconductor element is placed on the first and / or second conductive member from which the protective film has been removed, and the optical semiconductor element is a sealing member made of a translucent resin. A third step of coating;
A fourth step of removing the support substrate;
It includes a fifth step of dividing the base to obtain an optical semiconductor device.

In such a method of manufacturing an optical semiconductor device, in the second step, a base is formed, and the upper surfaces of the first and second conductive members not covered with the protective film are shielded from thermosetting resin. It is preferable to form a coating layer to be coated with.
The first and / or second conductive member preferably has a thickness of 25 μm or more and 200 μm or less.
In the second step, it is preferable that the base body and / or the coating layer is formed so as to have a linear expansion coefficient of ± 30% of the support substrate.

An optical semiconductor device of the present invention includes an optical semiconductor element,
A first conductive member on which an optical semiconductor element is mounted on an upper surface and a lower surface forms an outer surface of the optical semiconductor device;
A second conductive member spaced from the first conductive member and having a lower surface forming the outer surface of the optical semiconductor device;
A base including a light-shielding resin disposed between the first conductive member and the second conductive member;
An optical semiconductor device comprising a sealing member made of a translucent resin for sealing the optical semiconductor element,
The first and second conductive members are made of a plating having a coating layer containing a light-shielding resin that covers a part of the upper surface.

In such an optical semiconductor device, it is preferable that the first conductive member and / or the second conductive member have a protrusion on a side surface.
It is preferable that the upper surface and the lower surface of the protrusions of the first conductive member and / or the second conductive member are in contact with the base and / or the coating layer.
The coating layer preferably has a thickness of 125 μm or less.
It is preferable that the first and second conductive members have a thickness of 25 μm or more and 200 μm or less.
It is preferable that the coating layer comprises a thermosetting resin.

According to the present invention, it is possible to easily and surely manufacture an optical semiconductor device that achieves further miniaturization and weight reduction with a high yield.
In addition, the optical semiconductor device of the present invention can improve the extraction efficiency to the maximum, and can further reduce the size and weight.

It is a perspective view which shows the optical semiconductor device of this invention. 1B is a cross-sectional view and partially enlarged view of the optical semiconductor device of FIG. It is process drawing explaining the manufacturing method of the optical semiconductor device of this invention. It is process drawing explaining the manufacturing method of the optical semiconductor device of this invention. It is sectional drawing which shows another optical semiconductor device of this invention. It is process drawing explaining the manufacturing method of another optical semiconductor device of this invention. It is process drawing explaining the manufacturing method of another optical semiconductor device of this invention.

  The best mode for carrying out the present invention will be described below with reference to the drawings. However, the form shown below illustrates the optical semiconductor device and the manufacturing method for embodying the technical idea of the present invention, and is not limited to the following. In particular, each item described in each embodiment can be applied as it is to other embodiments unless otherwise specified.

Moreover, this specification does not specify the member shown by the claim as the member of embodiment. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the components described in the embodiments are not limited to the scope of the present invention unless otherwise specified. It is just an example.
The size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of explanation.
Furthermore, in the following description, the same name and reference numeral indicate the same or the same members, and detailed description will be omitted as appropriate.

<Embodiment 1: Optical Semiconductor Device 1>
An optical semiconductor device 100 of the present embodiment is shown in FIGS. 1A and 1B. 1A is a perspective view of the optical semiconductor device 100, and FIG. 1B is a cross-sectional view taken along line AA ′ of the optical semiconductor device 100 shown in FIG. 1A.

  The optical semiconductor device 100 includes a light-emitting element 103, a first conductive member 102 having a coating layer 106b in a region other than a region where the light-emitting element 103 is mounted and a region electrically connected thereto, and a first conductive member 102. And a second conductive member 101 having a coating layer 106b in a region other than the connection region of the light-emitting element 103, and a sealing member 104 that covers the light-emitting element 103 and the like. A protective element can be further provided in the optical semiconductor device.

(First conductive member / second conductive member)
The first and second conductive members function as a pair of electrodes for mounting and / or energizing the optical semiconductor element (hereinafter sometimes referred to as “light emitting element”). is there.

A light emitting element etc. are mounted in the 1st electrically conductive member directly on the upper surface, or indirectly through another member, such as a submount. The first conductive member may simply contribute to energization to the light emitting element and / or the protection element, or the like. That is, it may function as an electrode.
For example, as shown in FIG. 1B, the first conductive member 102 has an upper surface on which the light emitting element 103 is placed and a lower surface that forms the outer surface of the optical semiconductor device 100. For this reason, the upper surface of the first conductive member 102 may be larger than the area where the light emitting element 103 can be placed. The shape can be various, for example, a substantially square shape when viewed from above, a polygonal shape, or a shape having a cutout in these shapes. In addition, the region where the light emitting element 103 is placed is preferably a flat surface.

The second conductive member is electrically connected to the light emitting element using a conductive wire or using a bump or the like, and functions as an electrode for supplying power from the outside.
As shown in FIG. 1A, the second conductive member 101 can be provided to face the first conductive member 102. Here, the first conductive member 102 and the second conductive member 101 function as a pair of positive and negative electrodes.

The second conductive member 101 includes a top surface that is directly electrically connected to the electrode of the light emitting element via the light emitting element 103 and the conductive wires 105 and 105 ′ or without using the conductive wire, and the optical semiconductor device 100. It is provided so as to have a lower surface forming an outer surface, that is, exposed to the outside without being covered with the base 106. The upper surface of the second conductive member 101 may have an area necessary for bonding with the conductive wires 105 and 105 ′ or for direct connection with the light emitting element.
Further, as shown in FIG. 1B and the like, the upper surface of the second conductive member 101 may be a flat plane or may have fine irregularities, grooves, holes, and the like.
The lower surfaces of the first and second conductive members are preferably substantially flat surfaces as the outer surface of the optical semiconductor device, but fine irregularities or the like may be formed. In particular, it is suitable that the first and second conductive members are flush with the lower surface of the base described later.

Although the side surfaces of the first and second conductive members may be flat surfaces, it is preferable to have a shape having a protrusion X as shown in FIG. 1B in consideration of adhesion to a substrate described later. The protrusion X is preferably provided at a position separated from the lower surfaces of the first and second conductive members. The protrusion length, protrusion shape, and the like of the protrusion are not particularly limited, and can be appropriately adjusted depending on the manufacturing method, materials of the first and second conductive members, and the like.
For example, in the sectional view (longitudinal sectional view) taken along the line cc ′ of FIG. 1B, the protrusion X is sandwiched between the base body 106 and / or the coating layer 106a. Both are preferably arranged so as to be in contact with the substrate 106 and / or the coating layer 106a.
The protrusion X can be provided at any position around the first and second conductive members. For example, it may be provided only partially on the two opposing side surfaces of the conductive member having a square shape when viewed from above, but it is preferably formed over the entire periphery of the first and second conductive members. As a result, it is possible to reliably prevent the substrate from falling off. When the first and second conductive members are exposed on the side surface of the optical semiconductor device, it is preferable that a protrusion is formed around the entire conductive member other than the exposed side surface. As a result, it can be prevented from falling off the base body, and solder or the like can be easily joined.
Moreover, the shape which inclines the side surface of a 1st conductive member and / or a 2nd conductive member so that a side surface may incline rather than a projection part to the lower surface side may be sufficient. Even with this shape,
It is possible to effectively prevent the first and second conductive members from falling off the base.

As shown in FIG. 1A, the side surfaces S of the first or second conductive members 102 and 101 are all covered with the base 106, that is, provided so as to be separated from the side surfaces of the optical semiconductor device 100. Is suitable. Thereby, when obtaining the optical semiconductor device separated into pieces by cutting, the cutting blade can be cut so as not to come into contact with the conductive member, so that cutting becomes easy.
However, the first and second conductive members may be provided so as to form the outer surface of the optical semiconductor device 100 in a part of the side surfaces thereof, that is, to reach the side surfaces of the optical semiconductor device 100 ( Not shown). Thereby, the heat resulting from the light emitting element can be effectively released by increasing the area and increasing the exposed surface.

The first and second conductive members may be formed of different materials, but are preferably formed of the same material. Thereby, it can manufacture more simply.
For example, metals or alloys such as copper, aluminum, gold, silver, tungsten, iron, nickel, cobalt, molybdenum (for example, iron-nickel alloy, phosphor bronze, iron-containing copper, eutectic solder such as Au-Sn, SnAgCu, SnAgCuIn solder etc.), oxide conductors (eg ITO etc.) and the like. The first and second conductive members may be either a single layer or a stacked layer. In particular, the first and second conductive members are preferably plated, and more preferably a laminated structure of plated.

Specifically, when a light-emitting element is used as the semiconductor element, it is preferable that the uppermost surface (the light-emitting element placement side) be capable of reflecting light from the light-emitting element or have high reflectivity and high gloss. Specifically, those having a visible region reflectance of about 70% or more are preferable. For this reason, gold, silver, copper, Pt, Pd, Al, W, Mo, Ru, Rh and the like are suitable, and among them, Ag, Ru, Rh, Pt, Pd and the like are preferable.
For example, the glossiness of the surface is suitably about 0.5 or more, and preferably about 1.0 or more. The glossiness is a value obtained by 45 ° irradiation and vertical light reception using a Nippon Denshoku micro surface color difference meter VSR 300A.

The lower surface is preferably plated with eutectic solder such as Au, Sn, Sn alloy and AuSn, which is advantageous for mounting on a circuit board.
Specific examples of the laminated structure constituting the first and second conductive members include Au / Cu / Ag, Au / Cu / Ni / Ag, Au / Ni / Cu /, in order from the bottom surface to the top surface (light emitting element side). Ag, Au / Ni / Cu / Ni / Ag, etc. are mentioned.

  The film thicknesses of the first and second conductive members may be different from each other, but are preferably substantially equal. Specifically, about 200 μm or less is suitable, and about 100 μm or less is preferable. Moreover, about 25 micrometers or more is suitable. In particular, when the thickness is about 100 μm or less, the thickness is extremely thin that cannot be realized by a conventional lead frame, so that the optical semiconductor device can be made smaller and lighter.

(Substrate)
The base 106 includes a resin capable of blocking light from the light emitting element 103, and is disposed between the first conductive member 102 and the second conductive member 101. By providing the light-shielding base 106 at such a position, light from the light emitting element 103 can be prevented from leaking outside from the lower surface side of the optical semiconductor device 100, and light is extracted in the upper surface direction. Efficiency can be improved. Further, on the lower surface of the optical semiconductor device 100, the second conductive member 101 and the first conductive member 102 can be exposed as their outer surfaces, and the lead from the horizontal direction or the back surface as in the conventional lead frame. The structure can be further reduced in size and weight without a projecting structure, and without having a structure in which the projecting lead is bent and drawn downward or on the side surface.

The resin constituting the base 106 is not particularly limited as long as it can block light from the light emitting element, and more preferably reflects light from the light emitting element. Moreover, the thing with a small difference with linear expansion coefficients, such as a support substrate mentioned later, is preferable.
As resin which comprises a base | substrate, resin, such as a thermosetting resin and a thermoplastic resin, can be used, for example. Specifically, epoxy resin compositions, silicone resin compositions, modified epoxy resin compositions such as silicone modified epoxy resins, modified silicone resin compositions such as epoxy modified silicone resins, polyimide resin compositions, modified polyimide resin compositions, acrylic Examples thereof include a resin composition.

  In particular, resins described in paragraphs 73 to 81 of JP-A No. 2006-156704, for example, thermosetting resins (epoxy resins, modified epoxy resins, silicone resins, modified silicone resins, acrylate resins, urethane resins, etc.) are preferable. Specifically, an epoxy resin composed of triglycidyl isocyanurate, hydrogenated bisphenol A diglycidyl ether, and an acid anhydride composed of hexahydrophthalic anhydride, 3-methylhexahydrophthalic anhydride, 4-methylhexahydrophthalic anhydride It is preferable to use a solid epoxy resin composition containing a colorless and transparent mixture obtained by dissolving and mixing with an epoxy resin in an equivalent amount. Furthermore, to 100 parts by weight of these mixtures, 0.5 parts by weight of DBU (1,8-Diazabicyclo (5,4,0) undecene-7) as a curing accelerator, 1 part by weight of ethylene glycol as a cocatalyst, titanium oxide A solid epoxy resin composition in which 10 parts by weight of pigment and 50 parts by weight of glass fiber are added and partially cured by heating to be B-staged is preferable.

  Moreover, the thermosetting epoxy resin composition containing the epoxy resin containing the triazine derivative epoxy resin described in paragraphs 23-52 of WO2007 / 015426 is preferable.

  As the triazine derivative epoxy resin, for example, 1,3,5-triazine nucleus derivative epoxy resin is suitable. In particular, an epoxy resin having an isocyanurate ring is excellent in light resistance and electrical insulation, and preferably has a divalent, more preferably a trivalent epoxy group with respect to one isocyanurate ring. Specifically, tris (2,3-epoxypropyl) isocyanurate, tris (α-methylglycidyl) isocyanurate, or the like can be used. The softening point of the triazine derivative epoxy resin is preferably 90 to 125 ° C. This triazine derivative epoxy resin may be used in combination with a hydrogenated epoxy resin, other epoxy resins, or the like. Furthermore, in the case of a silicone resin composition, a silicone resin containing a methyl silicone resin is preferable.

When using a triazine derivative epoxy resin, it is preferable to use an acid anhydride which acts as a curing agent. As the acid anhydride, light resistance can be improved by using a non-aromatic one having no carbon-carbon double bond. Examples include hexahydrophthalic anhydride, methylhexahydrophthalic anhydride, trialkyltetrahydrophthalic anhydride, hydrogenated methylnadic acid anhydride, and the like. In particular, methylhexahydrophthalic anhydride is preferred.
Moreover, it is preferable to use an antioxidant. As the antioxidant, for example, phenol-based and sulfur-based antioxidants can be used. As the curing catalyst, those known in the art can be used.
In addition, various additives can be mix | blended with these resin as needed.
The thermosetting resin preferably has a viscosity of 5 to 500 Pa · s, more preferably 10 to 200 Pa · s, and further preferably 15 to 190 ° C. (temperature at the time of molding the resin). 100 Pa · s.

To these resins, fine particles such as TiO ₂ , SiO ₂ , Al ₂ O ₃ , MgO, MgCO ₃ , CaCO ₃ , Mg (OH) ₂ , and Ca (OH) ₂ may be added as fillers (fillers). Good. You may use these individually or in combination of 2 or more types. By using such a filler, the light transmittance can be adjusted. For example, the light transmittance can be adjusted so that about 60% or more of light from the light emitting element is shielded, and more preferably, about 90% is shielded. can do.

In particular, when the optical semiconductor device is used for illumination or the like, it is preferable to shield it by reflecting it. Therefore, those having a reflectance of 60% or more for light from the light emitting element are suitable, those reflecting 70% or more are preferable, those reflecting 80% or more are more preferable, and those reflecting 90% or more are more preferable. .
For example, it is preferable to use a white filler (eg, TiO ₂ , SiO ₂ , Al ₂ O ₃ , MgO, Sb ₂ O ₃ , Al (OH) ₃ , BaSO ₄ , MgCO ₃ , BaCO _3, etc.). In this case, it is suitable to add about 50 to 90 wt%, preferably 70 to 90 wt% of white filler with respect to all materials constituting the substrate.

When it is used for a display or the like and it is desired to improve the contrast, the light absorption rate from the light emitting element is suitably 60% or more, and preferably 90% or more. In such a case, as a filler, for the purpose of black filler, for example, carbon such as acetylene black, activated carbon, graphite, transition metal oxide such as iron oxide, manganese dioxide, cobalt oxide, molybdenum oxide or colored organic pigment, etc. It is preferable to use them accordingly. Further, for the purpose of reducing the linear expansion coefficient of the resin, a white filler such as SiO ₂ can be filled as long as the contrast is not impaired.
These compounds are blended in an amount of 50 to 90 wt%, preferably 70 to 90 wt%, based on the total material constituting the substrate. When adding a conductive material such as carbon, it is necessary to add it in a range that does not show conductivity in the molded body.

By using the filler, not only the light transmittance and / or reflectance can be adjusted, but also the linear expansion coefficient of the substrate can be adjusted as described later.
That is, it is preferable that the base body is controlled to have a linear expansion coefficient that makes a difference from the linear expansion coefficients of the first and second conductive members small. For example, the base is suitably formed of a material having a linear expansion coefficient of ± 40% of the linear expansion coefficient of the first and second conductive members. The linear expansion coefficient is preferably ± 20% of the linear expansion coefficient. Thereby, in the optical semiconductor device after singulation, the first and second conductive members and the base are prevented from being peeled off, and an optical semiconductor device excellent in reliability can be obtained.

  From another viewpoint, the substrate is preferably controlled to have a linear expansion coefficient so that a difference from the linear expansion coefficient of the support substrate to be removed (peeled) before being separated into individual pieces, which will be described later, becomes small. For example, the substrate is suitably formed of a material having a linear expansion coefficient of ± 30% of the support substrate, and has a linear expansion coefficient of ± 10% of the support substrate. Is preferred. Thereby, the residual stress between the support substrate and the substrate can be controlled (relaxed), and the warpage of the assembly of the optical semiconductor devices before being singulated can be reduced. As a result, internal damage such as cutting of the conductive wire can be reduced, and positional deviation at the time of separation can be suppressed to improve yield.

From another viewpoint, the base is suitably formed of a material having a linear expansion coefficient of 20 ppm or less with respect to the support substrate, and more preferably 10 ppm or less.
For this reason, for example, when using a SUS board as a support substrate, it is suitable to mix | blend a filler with 70 wt% or more in a base | substrate, It is preferable to mix | blend 85 wt% or more.
The base is suitably formed of a material having a linear expansion coefficient of 20 ppm or less, more preferably 10 ppm or less, with respect to the first and second conductive members.

For example, the substrate preferably has a linear expansion coefficient of 5 to 30 × 10 ⁻⁶ / ° C., and more preferably 7 to 20 × 10 ⁻⁶ / ° C. By selecting such a linear expansion coefficient, it is possible to use materials that are normally used in this field regardless of the type of support substrate, conductive member, and the like.

  The thickness of the base 106 may be any thickness that can prevent light leakage to the lower surface side of the optical semiconductor device 100. In particular, the sealing member 104 described later has a thickness that does not intervene between the first conductive member 102 and the base 106 and / or between the second conductive member 101 and the base 106, that is, the first and second. The thickness is preferably equal to or greater than the thickness of the conductive member.

(Coating layer)
A coating layer 106a is formed on the top surfaces of the first and second conductive members 101 and 102, leaving a part of the top surfaces. Here, “leaving part of the upper surface” means that there is a region that is not covered with the covering layer 106a on the upper surfaces of the first and second conductive members. It means that a coating layer is not formed in the region where the optical semiconductor element is placed and its vicinity, and in the connection region where the optical semiconductor element is electrically connected and in the vicinity thereof. It is preferable that the region not covered with the covering layer 106a has a minimum size necessary for mounting and connecting the optical semiconductor element.

The coating layer is for making light absorption from the optical semiconductor element on the upper surfaces of the first and second conductive members minimal and facilitating reflection. Therefore, the coating layer only needs to be formed of a light-shielding resin, and it is suitable that the coating layer is formed of the same material as that constituting the substrate.
The coating layer can also prevent an increase in light absorption due to deterioration of the first and second conductive members due to permeation of oxygen or moisture from a sealing resin described later. For this purpose, it may be formed separately from the base 106, but it is preferable to form it integrally with the base 106 when forming the base 106. Thereby, the interface with the base 106 can be substantially eliminated, and the base and the first and second conductive members can be more firmly coupled.
With this covering layer, the substrate can be thickened at a position close to the light emitting element, so that light from the light emitting element can be prevented from leaking to the bottom surface, and light can be reflected more efficiently. .

  In particular, the coating layer is preferably formed of a thermosetting resin or a thermosetting resin composition containing an additive such as a filler. Such a resin has a markedly lowered viscosity due to heating, and flows and spreads on the upper surfaces of the first and second conductive members, and is cured to form a thin and uniform coating layer. .

  The thermosetting resin constituting the coating layer or the resin composition thereof preferably has a linear expansion coefficient that exhibits the value described above. By using a material exhibiting such a linear expansion coefficient, the coating layer can be formed into a substrate and / or due to heating and cooling in the manufacturing process, temperature change in transportation and storage of the optical semiconductor device, heat generation during driving of the optical semiconductor device, and the like. Alternatively, peeling from the first and second conductive members can be avoided.

The thickness of the coating layer is not particularly limited and can be appropriately adjusted depending on the material, the size of the optical semiconductor element, the size of the optical semiconductor device, and the like. For example, it is suitable that the height of the optical semiconductor element to be mounted on the first or second conductive member is not more than about. Thereby, light is emitted only from the upper surface of the optical semiconductor element, and light can be extracted more efficiently. Specifically, about 125 μm or less is suitable, and about 100 μm or less is preferable. Moreover, about 25 micrometers or more are suitable and about 50 micrometers or more are preferable.
The side surface of the coating layer may be formed so as to spread toward the upper surface. In this way, by making the side surface an inclined surface, light can be efficiently reflected toward the top surface of the optical semiconductor device. Moreover, the side surface of the coating layer may be formed so as to become narrower toward the upper surface. By doing in this way, it can suppress that a coating layer and a sealing member peel. Further, the side surface of the coating layer may be formed as a curved surface.

(Sealing member)
The sealing member covers the optical semiconductor element on the first conductive member, the second conductive member, and the upper surface of the base, and includes a light emitting element, a light receiving element, a protective element, and an electron such as a conductive wire for these elements. It is a member that protects parts and the like from dust, moisture, external force and the like.

  As a material for the sealing member, a material that is transparent to light from the light emitting element and has light resistance and insulation is preferable. Specifically, silicone resin composition, modified silicone resin composition, epoxy resin composition, modified epoxy resin composition, acrylic resin composition, etc., silicone resin, epoxy resin, urea resin, fluororesin, and at least these resins Examples thereof include inorganic substances such as a hybrid resin containing one or more kinds, glass, and silica sol.

  The sealing member may contain a colorant, a light diffusing agent, a light reflecting material, various fillers, a wavelength conversion material (for example, a phosphor), and the like.

  When used in an optical semiconductor device, the sealing member preferably has a light transmitting property as described above. For example, when used in a light receiving device, the sealing member increases the light incident efficiency. For the purpose of suppressing secondary reflection, a colored filler such as white or black may be contained. In particular, a sealing member containing a black colored filler is preferably used in an infrared optical semiconductor device, an infrared detection device, or the like in order to avoid the influence of visible light.

You may contain the fluorescent substance which emits the light which absorbs at least one part of the light from a semiconductor light-emitting device, and has a different wavelength.
As a fluorescent substance, what converts the light from a semiconductor light-emitting element into a shorter wavelength may be used, but what converts it into a long wavelength from a viewpoint of light extraction efficiency is preferable. Phosphor is a single layer containing one kind of phosphor, a single layer in which two or more kinds of phosphors are mixed, two or more layers in which two or more kinds of phosphors are contained in separate layers, two kinds Any one of two or more single layers in which the above-described fluorescent substances are mixed may be used.

Examples of the phosphor include nitride phosphors and oxynitride phosphors mainly activated by lanthanoid elements such as Eu and Ce, and more specifically, (a) Eu-activated α or β Mainly activated by sialon-type phosphors, various alkaline earth metal nitride silicate phosphors, various alkaline earth metal aluminum nitride silicon phosphors, (b) lanthanoid elements such as Eu, and transition metal elements such as Mn Alkaline earth metal halogen apatite phosphor, alkaline earth halosilicate phosphor, alkaline earth metal silicate phosphor, alkaline earth metal borate phosphor, alkaline earth metal aluminate phosphor, alkaline earth Runs of metal silicate, alkaline earth metal sulfide, alkaline earth metal thiogallate, alkaline earth metal silicon nitride, germanate, (c) Ce, etc. Selected from rare earth aluminates, rare earth silicates, alkaline earth metal rare earth silicates that are mainly activated with a tanoid element, and organic and organic complexes that are mainly activated with a lanthanoid element such as Eu. It is preferable that it is at least any one or more. Among these, a YAG phosphor that is a rare earth aluminate phosphor mainly activated by a lanthanoid element such as Ce is preferable. YAG-based phosphors include Y ₃ Al ₅ O ₁₂ : Ce, (Y _0.8 Gd _0.2 ) ₃ Al ₅ O ₁₂ : Ce, Y ₃ (Al _0.8 Ga _0.2 ) ₅ O ₁₂ : Ce , (Y, Gd) ₃ (Al, Ga) ₅ O ₁₂ . Also, some or all Tb of Y, Lu, etc. _Tb 3 _Al 5 _O 12 was replaced _{with: Ce, Lu 3 Al 5 O} 12: may be Ce or the like.

  The sealing member may have a single layer structure, or may have a laminated structure in which the type or amount of the material or additive of the sealing member is different.

  The shape of the sealing tree member is not particularly limited, and may be a shape that completely covers the element and the electronic component. In consideration of the light distribution characteristics and the like, for example, the upper surface may have a convex lens shape, a concave lens shape, a Fresnel lens shape, or the like, or a lens-shaped member may be provided separately.

The whole or part of the sealing member may contain a phosphor to form a plate or dome, or a plate or dome may be provided separately. For example, glass, a resin composition, or other molded body coated with a phosphor; phosphor-containing glass, YAG sintered body, sintered body such as YAG and Al ₂ O ₃ , SiO ₂ , B ₂ O ₃ , Examples include phosphor-containing molded bodies such as crystallized inorganic bulk bodies in which YAG is precipitated in an inorganic melt.

(Optical semiconductor device)
An optical semiconductor element is an element configured by a stacked body of semiconductor layers in which positive and negative electrodes are formed on the same surface or different surfaces, and includes, for example, a light emitting element, a light emitting diode, a light receiving element, or the like.

  As the light emitting element, one having an arbitrary wavelength can be selected. The composition of the light-emitting element (semiconductor layer material, crystallinity), emission color (emission wavelength), size, number, and the like can be appropriately selected according to the purpose.

Examples of the light receiving element include a photo IC, a photodiode, a phototransistor, a CCD (charge coupled device) image sensor, a CMOS image sensor, and a Cd cell.
Moreover, you may mount a light emitting element and / or a light receiving element individually or in combination of 2 or more types.

(Joining member)
A joining member is used to place and connect the optical semiconductor element on the first and / or second conductive member. The coupling member may be either a conductive bonding member or an insulating bonding member. For example, when the substrate of the optical semiconductor element is an insulating substrate, specifically, in the case of a semiconductor light emitting element in which a nitride semiconductor layer is stacked on sapphire, the bonding member may be either insulating or conductive. In the case of a conductive substrate such as a SiC substrate, conduction can be achieved by using a conductive bonding member.

  As the insulating bonding member, an epoxy resin composition, a silicone resin composition, a polyimide resin composition, a modified resin thereof, a hybrid resin, or the like can be used. In the case of using these resins, a metal layer having a high reflectance such as an Al or Ag film and / or a dielectric reflecting film may be provided on the back surface of the light emitting element in consideration of deterioration due to light or heat from the semiconductor light emitting element. preferable.

As the conductive bonding member, a conductive paste such as silver, gold or palladium, a solder such as Au—Sn eutectic, a brazing material such as a low melting point metal, or the like can be used.
Moreover, when using a translucent joining member especially among joining members, you may contain the fluorescent member which absorbs the light from a semiconductor light-emitting element, and light-emits the light of a different wavelength in it.

(Conductive wire)
The conductive wire is used to electrically connect the electrode of the optical semiconductor element and the first and / or second conductive member. Usually, a metal such as gold, copper, platinum, aluminum, or an alloy thereof is used. The used wire is used. In particular, it is preferable to use gold having excellent thermal resistance.

(Protruding part)
Between the adjacent second conductive member 101 and the first conductive member 102, the upper surface of the second conductive member 101 and the first conductive member 102, and the upper surface of the light emitting element 103 are positioned away from the light emitting element 103. Higher protrusion member 106c.

As shown in FIG. 1B, the protruding member 106c is formed as a recess S1 that extends toward the upper surface. Thus, by making the inner surface an inclined surface, light can be reflected toward the upper surface of the optical semiconductor device. Therefore, light can be suppressed from being emitted to the side surface of the optical semiconductor device 100, and light can be efficiently extracted in the upper surface direction. However, this protrusion does not necessarily exist.
The covering layer 106b, the base 106a, and the protruding member 106c are formed of the same light-blocking thermosetting resin.

<Embodiment 2: Manufacturing method 1 of an optical semiconductor device>
A method for manufacturing an optical semiconductor device of the present invention will be described with reference to the drawings. 2A and 2B are diagrams illustrating a process of forming an optical semiconductor device assembly 1000. The optical semiconductor device described in Embodiment 1 is obtained by cutting the assembly 1000 into pieces. 100 can be obtained.

First Step First, as shown in FIG. 2A (a), a support substrate 1070 is prepared.
(Support substrate)
The support substrate is a plate-like or sheet-like member used for forming the first and second conductive members, and is removed before the optical semiconductor device is singulated. It is a member not made.
The support substrate is not particularly limited, and is preferably a conductive substrate. For example, a metal plate such as SUS, iron, copper, silver, kovar, nickel plate, etc., a conductive film formed on an insulating substrate such as polyimide by sputtering or vapor deposition, etc. Examples include substrates.

Since the support substrate is removed at the final stage of the process, it is preferable to use a material that can be bent easily. In order to increase the surface gloss of the first and second conductive members to be formed, the surface of the support substrate is preferably smooth. For example, when SUS is used as the support substrate, it is suitable to use SUS in the 300s with relatively small crystal grain boundaries such as 302. In addition, when dimensional accuracy is required, it is preferable to use a 400 series having a low linear expansion coefficient.
The film thickness is, for example, about 10 μm to 300 μm.
In order to relieve warpage after molding with a resin, which will be described later, slits, grooves, and corrugated processing may be performed.

  A resist 1080 is applied as a second protective film on the surface of the support substrate. The thickness of the first and second conductive members formed later can be adjusted by the thickness of the resist 1080. For example, the thickness of the resist can be about 10 to 200 μm, for example, 100 μm. Here, the resist 1080 is provided only on the upper surface (the surface on which the first conductive member or the like is formed) of the support substrate 1070, but may be formed on the lower surface (the surface on the opposite side). In that case, by providing a resist on almost the entire opposite surface, it is possible to prevent the conductive member from being formed on the lower surface when the first and second conductive members are formed by plating.

  When the second protective film to be used is a resist, either a positive type or a negative type may be used. Moreover, you may use combining a positive type and a negative type. Alternatively, a method such as attaching a resist that can be formed by screen printing or a sheet-like resist may be used.

  The applied resist is dried, and a mask 1090 having a plurality of openings spaced apart from each other is directly or indirectly disposed thereon, and exposed by irradiating ultraviolet rays as indicated by arrows in the drawing. For the ultraviolet rays used here, a wavelength suitable for the sensitivity of the resist 1080 can be selected.

  Then, it processes with an etching agent and forms the resist 1080 which has the opening part K, as shown to FIG. 2A (b).

Next, the first and second conductive members 1010 are formed in the opening K of the resist 1080 by plating with metal as shown in FIG. 2A (c). By adjusting the plating conditions, the plating can be performed so as to be thicker than the film thickness of the resist 1080. Thus, the conductive member can be formed up to the upper surface of the second protective film, and the protrusion X as shown in FIG. 2B can be formed.
Specifically, a laminated structure of Au—Cu—Ni—Ag plating from the support substrate side can be given. The plating conditions can be adjusted by arbitrarily setting parameters known in the art.

First, pretreatment is performed with an acidic cleaner. The pretreatment is preferably performed in the range of room temperature to about 50 ° C. A commercial item can be used for the acidic cleaner. Examples of the acid solution include dilute sulfuric acid, dilute hydrochloric acid, dilute nitric acid and the like. Of these, dilute sulfuric acid is preferred.
Subsequently, plating is performed on the support substrate in the order of Au-Cu-Ni-Ag. For example, the plating is suitably performed in the range of room temperature to about 75 ° C.
Since Au becomes a bonding surface as an electrode after peeling off the support substrate, Au is formed in consideration of easy mounting. A film thickness of about 0.1 to 1.0 μm is suitable, for example. In addition, adhesiveness can be controlled by processing with a strike bath before Au plating.
Ni plating is preferably a sulfamic acid bath that is excellent in low stress and thick film electroforming. It is more preferable to form a gloss film of about 5 to 20 μm by the additive. The Ni film can also function as a barrier for preventing Cu diffusion and as a mask for later etching.
Ag plating is preferably performed in a short time with a bath capable of forming matte to high gloss. A film thickness of about 2 to 5 μm is suitable.
It is preferable to wash and / or dry the support substrate and the plating film before and after each plating.

  After plating, the resist 1080 is washed and removed, thereby forming first and second conductive members 1010 that are separated from each other, as shown in FIG. 2A (d).

  Note that the first and second conductive members may be formed by etching. For example, a thin film of a conductive member such as a copper foil is pasted on a plate-like support substrate made of an insulating member such as polyimide, and a sheet-like protective film (such as a dry resist sheet) is pasted on the conductive member. Then, exposure is performed using a mask having an opening, and the exposed portion of the protective film is removed using a cleaning liquid such as a weak alkaline solution. Thereby, a protective film having an opening is formed on the conductive member. Next, the conductive member is etched by immersing the supporting substrate together with an etchant capable of etching the conductive member. Finally, by removing the protective film, first and second conductive members that are separated from each other are formed on the support substrate. Even when the first and second conductive members are formed by such a method, the first and second conductive members can be formed in a uniform and similar thin film shape to the same extent as the conductive members formed by plating.

Here, the side surfaces of the first and second conductive members may be processed to be curved. That is, since the side surfaces of the first and second conductive members are exposed by removing the protective film (resist 1080), the side surfaces are processed. The processing at this time can be performed using a method known in the art, for example, anisotropic dry etching, wet etching, or the like. In particular, it is preferable to perform wet etching using an etchant that can etch only a part of the plating of the laminated structure.
The wet etching etchant, etching conditions, and the like can be appropriately adjusted depending on the plating material and the like. In particular, immersion treatment, spraying and the like are advantageous.
For example, as an etchant, it is suitable to use a general copper soft etching solution made of persulfate or hydrogen peroxide and an inorganic acid in order to mainly process Cu into a curve. Thereby, for example, a curve can be formed by side etching of 10 to 30 μm.
By forming such a curve, the anchor effect of the base body to the first and second conductive members can be exhibited, and the close contact between both can be ensured.

  Next, as shown in FIG. 2B (a), a protective film 1100 is formed on a part of the upper surface of the first and second conductive members 1010. This protective film 1100 can be formed by using the same material as the second protective film described above and patterning in the same manner. This protective film 1100 can be used to define a region where a substrate and a coating layer described later are not formed. Here, in a later step, a region slightly larger than the optical semiconductor element for mounting the optical semiconductor element and a wire bonding region for establishing electrical connection with the optical semiconductor element are covered with a protective film 1100. .

Second Step A base body 1060a capable of reflecting light from the light emitting element is formed between the first and second conductive members 1010. At the same time, the coating layer 1060 b can be formed on the upper surface of the first conductive member 1010 that is not covered with the protective film 1100.
The substrate 1060a and the coating layer 1060b are formed by heating the light-shielding thermosetting resin to reduce the viscosity, and then transferring the entire surface of the support substrate 1070 on which the first and second conductive members 1010 are formed. It can form by shape | molding by etc. The heating temperature and the heating time can be adjusted as appropriate.
Specifically, the material constituting the substrate and the coating layer may be an epoxy resin composition, an epoxy-modified silicone resin composition, or a silicone resin composition containing SiO ₂ as a filler or TiO ₂ as a white pigment. . In order to improve the releasability from the mold during molding, it is possible to add a release material into the resin, and it is also possible to use a release material spray or a release sheet. In addition, a resin composition having a resin viscosity of 5 to 500 Pa · s at the time of molding is preferable, and a resin composition of 10 to 200 Pa · s and 15 to 100 Pa · s is more preferable in terms of filling properties. Moreover, it is preferable to use a resin composition having a linear expansion coefficient of 5 to 30 × 10 ⁻⁶ / ° C., and a resin composition of 7 to 20 × 10 ⁻⁶ / ° C. from the viewpoint of reducing warpage of the molded product. Is more preferable.
With such a material, a substrate having a thickness of about 100 μm can be formed. In addition, a coating layer having a thickness of about 25 μm can be formed at the same time.

Through such a process, the uniform coating layer 1060a and the base body 1060 can be easily and accurately formed using the characteristics of the thermosetting resin.
When the covering layer 1060b is formed integrally with the base body 1060a, the first and second conductive members and the base body are prevented from peeling off when the support substrate 1070 is removed, as will be described later. can do.

The protruding member 1060c can be formed as shown in FIG. 2B (a) by transfer molding using a mold or the like. Note that the base 1060a and the covering layer 1060b may be formed at the same time during the transfer molding.
The base 1060a, the covering layer 1060b, and the protruding member 2060c are preferably formed of the same material, but different light-shielding resins may be used depending on the purpose and application.

  As described above, when a metal mold is normally used, resin leakage occurs from the cavity due to factors such as the fastening state of the upper and lower metal molds, the viscosity of the resin, and the like in a region where wire bonding or the like is performed in the first and second conductive members. An ultra-thin resin layer or a burr may be formed until the electrical connection is hindered. However, the method of the present invention, that is, the partial coverage of the upper surfaces of the first and second conductive films by the protective film can effectively prevent the resin from entering the connection region, thereby improving the yield. Can do.

Third Step Next, the protective film 1100 is removed. The removal of the protective film 1100 can be performed similarly to the removal of the second protective film described above.

  As shown in FIG. 2B (b), the light emitting element 1030 is placed on the first conductive member 1010 in the region surrounded by the protruding member 1060c, and the conductive wire 1050 is surrounded by the same protruding member 1060c. The upper surface of the first conductive member 1010 is bonded using a bonding member (not shown). This joining can be performed using materials and methods known in the art.

  Next, a sealing member 1040 is formed by a known method such as transfer molding, potting, or printing so as to cover the light emitting element 1030 and the conductive wire 1050.

  In addition, although the sealing member 1040 is provided at substantially the same height as the protruding member 1060c, the sealing member 1040 may be formed to be lower or higher than the protruding member. In addition, the upper surface may be a flat surface as described above, or may be formed in a curved shape in which the center is recessed or protruded.

Fourth Step After the sealing member 1040 is cured, the support substrate 1070 is peeled and removed as shown in FIG. 2B (c). This separation of the support substrate may be performed after the protective film 1100 is removed and before the light emitting element 1030 is mounted. That is, this substrate removal step may be performed after any step after the second step, for example, after the step of removing the protective film.

Fifth Step Through the steps as described above, an assembly 1000 of semiconductor devices (optical semiconductor devices) as shown in FIG. 2B (d) can be obtained. Finally, the broken line part shown in FIG. 2C (d), that is, the protruding member 1060c is cut into pieces by cutting at a position where the protruding member 1060c is cut to obtain an optical semiconductor device 100 as shown in FIG. Here, the projecting member 1060b is cut so that the sealing member 1040 is not cut, so that the light extraction direction can be limited to the upper direction of the optical semiconductor device 100 only. Thereby, the extraction of light in the upward direction is efficiently performed. Although the protruding member 1060c is cut here, the protruding member 1040c may be cut at a position where the sealing member 1040 is cut. When the conductive member is cut at a position including the conductive member, the conductive member is exposed also on the side surface of the optical semiconductor device, and solder or the like is easily joined.

  As a method for dividing into pieces, various known methods such as dicing with a blade and dicing with a laser beam can be used.

In FIG. 2B (d), the cutting is performed at a position including the conductive member, but the present invention is not limited to this, and the sealing member 1040 may be cut at a position away from the conductive member, that is, without cutting the conductive member. .
In this case, since only the resin such as the base and the sealing member is cut, the cutting can be easily performed as compared to cutting the conductive member and the resin together.

  As described above, when an optical semiconductor device is manufactured through a series of steps of forming the first and second conductive members using the support substrate and then removing the support substrate, a conventional lead frame is used. The yield can be drastically improved as compared with a lead that is used or processed into a lead shape in which the lead is protruded or bent from the horizontal direction. That is, normally, as a lead for manufacturing one unit of an optical semiconductor device, an optical semiconductor element is arranged on the lead while securing a length to be projected and / or bent. In the present invention, an optical semiconductor device is provided. From the initial stage of manufacturing, the area occupied by one unit of the optical semiconductor device can be set to the minimum without securing the above-described lengths of protrusion and / or bending. Therefore, the number of optical semiconductor devices manufactured on a single support substrate of a predetermined size can be dramatically increased.

  Usually, since the lead frame is supplied as a wound body, even if it is flattened during use, a slight curve remains. Therefore, in processes such as resist application, patterning, clamping to a mold, and sealing in the manufacturing process, accuracy reduction due to bending, resin leakage, and the like occur. However, in the present invention, since a flat support substrate having a predetermined size that is not supplied as a wound body can be used, the above-described problems in the manufacturing process can be avoided and the yield can be further increased. Can be planned.

  Further, when the base and / or the covering layer is formed between or on the conductive members, resin leakage occurs from a desired part due to factors such as the viscosity of the resin, and wire bonding or the like in the first and second conductive members. In some cases, an extremely thin resin layer, a burr, or the like is formed in the region where the electrical connection is performed, which may hinder electrical connection. However, the method of the present invention, that is, the partial coverage of the upper surfaces of the first and second conductive films by the protective film can effectively prevent the resin from entering the connection region, thereby improving the yield. Can do.

<Embodiment 3: Optical semiconductor device 2>
FIG. 3 is a cross-sectional view showing an optical semiconductor device 200 of the present invention.
In this optical semiconductor device 200, the light emitting element 203 does not use a conductive wire, and the positive and negative electrodes of the light emitting element 203 are directly bonded to the first and second conductive members 201 and 202 using a conductive bonding member. The optical semiconductor device 100 has substantially the same configuration as that of the optical semiconductor device 100 shown in FIG.

  Thus, by directly joining the optical semiconductor elements, it is possible to prevent the wire from being deformed.

  A covering layer 206 b is formed on the first and second conductive members 201 and 202 in a region other than the mounting region of the light emitting element 203. It is preferable that the area not covered by the covering layer 206a has a minimum size necessary for mounting the optical semiconductor element. Thereby, absorption of the light from the optical semiconductor element on the upper surfaces of the first and second conductive members can be minimized and more easily reflected.

<Embodiment 4: Manufacturing method 2 of an optical semiconductor element>
In the method for manufacturing an optical semiconductor element in this embodiment, as shown in FIG. 4, in the first step in manufacturing method 1 of Embodiment 2, all of the upper surfaces of first and second conductive members 1020 and 1010 are formed. Is substantially the same as the manufacturing method 1 of the second embodiment, except that only the base 1060a is formed and the coating layer is not formed in the second step.

In FIG. 4, the thickness of the base 1060 is substantially the same as that of the first and second conductive members 1020 and 1010. However, the thickness of the base is the sum of the first and second conductive members and the protective film. It is good also as thickness, and is good also as arbitrary thickness below it.
An optical semiconductor having a configuration substantially similar to that of the optical semiconductor device 100 of the first embodiment, except that the coating layer is not formed on the upper surfaces of the first and second conductive members 1020 and 1010 by such a manufacturing method. A device can be obtained.

<Embodiment 5: Manufacturing method 3 of an optical semiconductor element>
In the manufacturing method of the optical semiconductor device in this embodiment, as shown in FIG. 5, in the first step in the manufacturing method 2 of the fourth embodiment, the first and first regions other than the region where the protruding member 1060c is provided in the subsequent step. The second embodiment is substantially the same as that of the fourth embodiment except that the upper surface of the conductive member 1010 is covered with the protective film 2220, and the base 1060a and the protruding member 1060c are formed in the second step, and the covering layer is not formed. Same as method 2.

In FIG. 5, the thickness of the base 1060a is substantially the same as that of the first and second conductive members 1010. However, the thickness of the base is defined as the total thickness of the first and second conductive members and the protective film. Alternatively, any thickness less than that may be used.
An optical semiconductor having substantially the same configuration as that of the optical semiconductor device 200 of the third embodiment, except that the coating layer is not formed on the upper surfaces of the first and second conductive members 201 and 202 by such a manufacturing method. A device can be obtained.

  The method for manufacturing an optical semiconductor device of the present invention can easily provide an optical semiconductor device that is small and lightweight and has high light extraction efficiency, and an optical semiconductor device excellent in contrast. These optical semiconductor devices are widely used in various devices such as various display devices, lighting fixtures, displays, backlight sources for liquid crystal displays, digital video cameras, facsimiles, copiers, scanners, image reading devices, projector devices, etc. can do.

100, 200 Optical semiconductor device 101, 201 Second conductive member 102, 202 First conductive member 103, 203 Optical semiconductor element (light emitting element)
104, 204 Sealing member 105, 105 ′ Conductive wire 106a, 206a Substrate 106b, 206b Cover layer 106c, 206c Protruding member 1000 Assembly of optical semiconductor devices 1010 Second conductive member 1020 First conductive member 1030 Optical semiconductor element ( (Light emitting element)
1040 Sealing member 1050 Conductive wire 1060a Base 1060b Coating layer 1060c Projection member 1070 Support substrate 1080 Second protective film (resist)
1090 Mask 1100, 1110 Protective film (resist)
X Projection S1 Concave

Claims (10)

Forming a first conductive member and a second conductive member spaced apart from each other on a support substrate, and covering at least a part of the top surfaces of the first and second conductive members with a protective film;
A second step of forming a substrate containing a light-shielding thermosetting resin between the first and second conductive members;
The protective film is removed, an optical semiconductor element is placed on the first and / or second conductive member from which the protective film has been removed, and the optical semiconductor element is a sealing member made of a translucent resin. A third step of coating;
A fourth step of removing the support substrate;
A method of manufacturing an optical semiconductor device, comprising a fifth step of dividing the base to obtain an optical semiconductor device.   2. In the second step, a base is formed, and a coating layer is formed which covers the upper surfaces of the first and second conductive members not covered with the protective film with a light-blocking thermosetting resin. The method described in 1.   The method according to claim 1, wherein the first and / or second conductive member has a thickness of 25 μm or more and 200 μm or less.   4. The method according to claim 1, wherein in the second step, the base body and / or the coating layer is formed to have a linear expansion coefficient of ± 30% of the support substrate. 5. . An optical semiconductor element;
A first conductive member on which an optical semiconductor element is mounted on an upper surface and a lower surface forms an outer surface of the optical semiconductor device;
A second conductive member spaced from the first conductive member and having a lower surface forming the outer surface of the optical semiconductor device;
A base including a light-shielding resin disposed between the first conductive member and the second conductive member;
An optical semiconductor device comprising a sealing member made of a translucent resin for sealing the optical semiconductor element,
The said 1st and 2nd electrically-conductive member consists of a plating which has a coating layer containing the light shielding resin which coat | covers leaving a part of upper surface, and is characterized by the above-mentioned.   The optical semiconductor device according to claim 5, wherein the first conductive member and / or the second conductive member has a protrusion on a side surface.   7. The optical semiconductor device according to claim 5, wherein an upper surface and a lower surface of the projecting portion of the first conductive member and / or the second conductive member are in contact with the base and / or the coating layer.   The optical semiconductor device according to claim 5, wherein the coating layer has a thickness of 125 μm or less.   The optical semiconductor device according to claim 5, wherein the first and second conductive members have a thickness of 25 μm or more and 200 μm or less.   The optical semiconductor device according to claim 5, wherein the coating layer includes a thermosetting resin.

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