JP2011014719A5 - - Google Patents

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Publication number
JP2011014719A5
JP2011014719A5 JP2009157656A JP2009157656A JP2011014719A5 JP 2011014719 A5 JP2011014719 A5 JP 2011014719A5 JP 2009157656 A JP2009157656 A JP 2009157656A JP 2009157656 A JP2009157656 A JP 2009157656A JP 2011014719 A5 JP2011014719 A5 JP 2011014719A5
Authority
JP
Japan
Prior art keywords
circuit
semiconductor device
connection node
discharge element
electrostatic discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009157656A
Other languages
English (en)
Japanese (ja)
Other versions
JP2011014719A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2009157656A priority Critical patent/JP2011014719A/ja
Priority claimed from JP2009157656A external-priority patent/JP2011014719A/ja
Priority to DE102010025506A priority patent/DE102010025506A1/de
Priority to US12/826,080 priority patent/US8355229B2/en
Publication of JP2011014719A publication Critical patent/JP2011014719A/ja
Publication of JP2011014719A5 publication Critical patent/JP2011014719A5/ja
Pending legal-status Critical Current

Links

JP2009157656A 2009-07-02 2009-07-02 半導体装置 Pending JP2011014719A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009157656A JP2011014719A (ja) 2009-07-02 2009-07-02 半導体装置
DE102010025506A DE102010025506A1 (de) 2009-07-02 2010-06-29 Halbleitervorrichtung
US12/826,080 US8355229B2 (en) 2009-07-02 2010-06-29 Semiconductor device with an inductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2009157656A JP2011014719A (ja) 2009-07-02 2009-07-02 半導体装置

Publications (2)

Publication Number Publication Date
JP2011014719A JP2011014719A (ja) 2011-01-20
JP2011014719A5 true JP2011014719A5 (https=) 2012-04-05

Family

ID=43412539

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009157656A Pending JP2011014719A (ja) 2009-07-02 2009-07-02 半導体装置

Country Status (3)

Country Link
US (1) US8355229B2 (https=)
JP (1) JP2011014719A (https=)
DE (1) DE102010025506A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011014719A (ja) * 2009-07-02 2011-01-20 Renesas Electronics Corp 半導体装置
CN103400820B (zh) 2013-01-30 2016-08-10 威盛电子股份有限公司 半导体装置
JP6249960B2 (ja) * 2014-01-29 2017-12-20 ルネサスエレクトロニクス株式会社 半導体装置
JP2016171163A (ja) * 2015-03-12 2016-09-23 ルネサスエレクトロニクス株式会社 半導体集積回路、通信モジュール、及びスマートメータ
US10742026B2 (en) * 2018-02-07 2020-08-11 International Business Machines Corporation Electrostatic protection device
US11912564B2 (en) * 2020-07-31 2024-02-27 Knowles Electronics, Llc Sensor package including a substrate with an inductor layer
CN115394770A (zh) * 2021-05-25 2022-11-25 意法半导体有限公司 无源静电放电传感器和用于检测静电放电的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7400485B2 (en) * 2005-09-28 2008-07-15 Tdk Corporation Surge absorber
JP4312188B2 (ja) 2005-09-30 2009-08-12 Ｔｄｋ株式会社 インダクタ素子
US7750408B2 (en) * 2007-03-29 2010-07-06 International Business Machines Corporation Integrated circuit structure incorporating an inductor, a conductive sheet and a protection circuit
JP2009064923A (ja) * 2007-09-05 2009-03-26 Toshiba Corp 半導体装置
JP2009157656A (ja) 2007-12-26 2009-07-16 Samsung Electronics Co Ltd 画像処理装置、画像処理方法、プログラム、および表示装置
JP2011014719A (ja) * 2009-07-02 2011-01-20 Renesas Electronics Corp 半導体装置

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