JP2011009616A - 太陽電池 - Google Patents
太陽電池 Download PDFInfo
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Abstract
【解決手段】 太陽電池10は、照射光の受光に応じてキャリアを生成する光電変換部11と、光電変換部11からキャリアを収集する受光面側収集電極13とを備える。光電変換部11は、照射光を受光する受光面11Fを有する。受光面11F上には、光透過性の光透過部材14が設けられる。受光面側収集電極13は、受光面11F上に設けられており、受光面11Fから光透過部材14の受光面の一部上に跨って形成される。光透過部材14の少なくとも一部は、受光面側収集電極13と受光面11Fとの間に設けられる。
【選択図】 図4
Description
実施形態に係る太陽電池は、照射光の受光に応じてキャリアを生成する光電変換部と、光電変換部からキャリアを収集する収集電極とを備える。光電変換部は、照射光を受光する受光面を有する。受光面上には、光透過性の光透過体が設けられる。収集電極は、受光面上に設けられており、受光面から光透過体の受光面の一部上に跨って形成される。光透過体の少なくとも一部は、収集電極と受光面との間に設けられる。
(太陽電池モジュールの構成)
以下において、第1実施形態に係る太陽電池モジュールの構成について、図面を参照しながら説明する。図1及び図2は、第1実施形態に係る太陽電池モジュール100の構成を示す図である。なお、図1は、照射光を受光する受光面側から太陽電池モジュール100を見た図である。図2は、太陽電池モジュール100の断面を示す図である。
以下において、第1実施形態に係る太陽電池の構成について、図面を参照しながら説明する。図3及び図4は、第1実施形態に係る太陽電池10の構成を示す図である。なお、図3は、照射光を受光する受光面側から太陽電池10を見た図である。図4は、太陽電池10の断面(図3に示すA−A断面)を示す図である。
(A2)希土類元素、アルカリ金属元素、アルカリ土類金属元素、ガリウム、フッ素などの群から選択される少なくとも1以上の元素を含む(A1)の透光性材料
(A3)ダイヤモンド
(B2)アクリル樹脂
(B3)ポリカーボネート樹脂
(B4)ポリスチレン樹脂
(B5)ポリエステル樹脂
(D2)アクリル樹脂
(D3)フッ素樹脂
(D4)スチレン系エストラマー
(D5)ポリプロピレン
(D6)ポリイミドシリコーン
以下において、第1実施形態に係る光透過体及び収集電極の構成について、図面を参照しながら説明する。図5は、第1実施形態に係る受光面側収集電極13及び光透過部材14の構成を示す図である。
以下において、第1実施形態に係る光透過体及び収集電極の製造方法について、図面を参照しながら説明する。図6〜図8は、第1実施形態に係る受光面側収集電極13及び光透過部材14の製造方法を示す図である。
第1実施形態では、受光面側収集電極13は、光電変換部11の受光面11Fから光透過部材14の受光面の一部上に跨って形成される。従って、受光面側収集電極13の幅が制約されていても、すなわち、受光面側収集電極13がある程度の幅を持っていても、光電変換部11の受光面11Fに光透過部材14を通して照射光が差し込むため、受光面側収集電極13による遮光を抑制することができる。また、受光面側収集電極13がある程度の幅を持っているため、受光面側収集電極13の低抵抗化を実現することができる。
以下において、第1実施形態の変更例1について、図面を参照しながら説明する。以下においては、第1実施形態との相違点について主として説明する。
以下において、変更例1に係る太陽電池の構成について、図面を参照しながら説明する。図9及び図10は、第1実施形態に係る太陽電池10の構成を示す図である。なお、図9は、照射光を受光する受光面側から太陽電池10を見た図である。図10は、太陽電池10の断面(図9に示すB−B断面)を示す図である。なお、図9及び図10では、図3及び図4と同様の構成について同様の符号を付していることに留意すべきである。
以下において、変更例1に係る光透過体及び収集電極について、図面を参照しながら説明する。図11は、変更例1に係る受光面側収集電極13及び光透過部材14を示す図である。
変更例1では、受光面側収集電極13は、受光面側収集電極13の幅方向において、受光面側収集電極13の両側が光透過部材14の受光面の一部上に跨って形成される。従って、受光面側収集電極13の両側において、受光面側収集電極13による遮光を抑制することができる。すなわち、受光面側収集電極13による遮光を第1実施形態よりも抑制することができる。
本発明は上述した実施形態によって説明したが、この開示の一部をなす論述及び図面は、この発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
Claims (5)
- 照射光の受光に応じてキャリアを生成する光電変換部と、
前記光電変換部から前記キャリアを収集する収集電極とを備えており、
前記光電変換部は、前記照射光を受光する受光面を有しており、
前記受光面上には、光透過性の光透過体が設けられており、
前記収集電極は、前記受光面上に設けられており、前記受光面から前記光透過体の受光面の一部上に跨って形成され、
前記光透過体の少なくとも一部は、前記収集電極と前記受光面との間に設けられることを特徴とする太陽電池。 - 前記受光面の略垂直方向において、前記光透過体の厚みは、略400nm以上であることを特徴とする請求項1に記載の太陽電池。
- 前記光透過体は、1.4以上3.6以下の屈折率を有することを特徴とする請求項1又は請求項2に記載の太陽電池。
- 前記光透過体は、1.6以上1.8以下の屈折率を有することを特徴とする請求項1又は請求項2に記載の太陽電池。
- 前記光透過体は、低弾性体であることを特徴とする請求項1乃至請求項4のいずれかに記載の太陽電池。
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JP2009153521A JP5384224B2 (ja) | 2009-06-29 | 2009-06-29 | 太陽電池 |
US12/825,616 US20100326514A1 (en) | 2009-06-29 | 2010-06-29 | Solar cell |
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JP2009153521A JP5384224B2 (ja) | 2009-06-29 | 2009-06-29 | 太陽電池 |
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JP2011009616A true JP2011009616A (ja) | 2011-01-13 |
JP5384224B2 JP5384224B2 (ja) | 2014-01-08 |
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JP2009153521A Expired - Fee Related JP5384224B2 (ja) | 2009-06-29 | 2009-06-29 | 太陽電池 |
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GB2491209B (en) * | 2011-05-27 | 2013-08-21 | Renewable Energy Corp Asa | Solar cell and method for producing same |
KR20120137821A (ko) * | 2011-06-13 | 2012-12-24 | 엘지전자 주식회사 | 태양전지 |
DE102012201284B4 (de) * | 2012-01-30 | 2018-10-31 | Ewe-Forschungszentrum Für Energietechnologie E. V. | Verfahren zum Herstellen einer photovoltaischen Solarzelle |
CN103165693B (zh) * | 2013-02-18 | 2016-03-16 | 友达光电股份有限公司 | 太阳能模块 |
CN105103307B (zh) * | 2013-03-19 | 2017-05-24 | 长州产业株式会社 | 光发电装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06318721A (ja) * | 1993-05-07 | 1994-11-15 | Canon Inc | 太陽電池 |
JPH09116179A (ja) * | 1995-10-20 | 1997-05-02 | Sanyo Electric Co Ltd | 光起電力素子 |
JP2006040937A (ja) * | 2004-07-22 | 2006-02-09 | Canon Inc | 太陽電池およびその製造方法 |
JP2007525006A (ja) * | 2003-06-25 | 2007-08-30 | ザ・ボーイング・カンパニー | 母線の下方に電気絶縁層を備えた太陽電池 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
AU570309B2 (en) * | 1984-03-26 | 1988-03-10 | Unisearch Limited | Buried contact solar cell |
GB2178761B (en) * | 1985-03-29 | 1989-09-20 | Mitsubishi Metal Corp | Wire for bonding a semiconductor device |
DE69215176T2 (de) * | 1991-08-30 | 1997-03-27 | Canon Kk | Solarzelle und deren Herstellungsmethode |
CN1291502C (zh) * | 2001-03-19 | 2006-12-20 | 信越半导体株式会社 | 太阳能电池及其制造方法 |
US6524880B2 (en) * | 2001-04-23 | 2003-02-25 | Samsung Sdi Co., Ltd. | Solar cell and method for fabricating the same |
AU2004263949B2 (en) * | 2003-07-22 | 2010-06-03 | Akzo Nobel N.V. | Process for manufacturing a solar cell foil using a temporary substrate |
US8716594B2 (en) * | 2006-09-26 | 2014-05-06 | Banpil Photonics, Inc. | High efficiency photovoltaic cells with self concentrating effect |
KR100974220B1 (ko) * | 2006-12-13 | 2010-08-06 | 엘지전자 주식회사 | 태양전지 |
EP2654089A3 (en) * | 2007-02-16 | 2015-08-12 | Nanogram Corporation | Solar cell structures, photovoltaic modules and corresponding processes |
US20080290368A1 (en) * | 2007-05-21 | 2008-11-27 | Day4 Energy, Inc. | Photovoltaic cell with shallow emitter |
-
2009
- 2009-06-29 JP JP2009153521A patent/JP5384224B2/ja not_active Expired - Fee Related
-
2010
- 2010-06-29 US US12/825,616 patent/US20100326514A1/en not_active Abandoned
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06318721A (ja) * | 1993-05-07 | 1994-11-15 | Canon Inc | 太陽電池 |
JPH09116179A (ja) * | 1995-10-20 | 1997-05-02 | Sanyo Electric Co Ltd | 光起電力素子 |
JP2007525006A (ja) * | 2003-06-25 | 2007-08-30 | ザ・ボーイング・カンパニー | 母線の下方に電気絶縁層を備えた太陽電池 |
JP2006040937A (ja) * | 2004-07-22 | 2006-02-09 | Canon Inc | 太陽電池およびその製造方法 |
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