JP2011008148A - Manufacturing device of liquid crystal device and manufacturing method of liquid crystal device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing device of a liquid crystal device capable of removing powdery dust accumulated in a peripheral region of a substrate, and to provide a manufacturing method of the liquid crystal device.SOLUTION: The manufacturing device of the liquid crystal device having a liquid crystal layer interposed between a pair of substrates and an alignment layer provided on one substrate of the pair of substrates and subjected to alignment treatment includes a stage 73 having a substrate placing region on which at least one substrate 101 to be treated is placed, a rubbing roll 75 subjecting the alignment layer provided on one substrate to rubbing treatment on the stage 73 and a first suction part 76 having a suction opening 76a disposed along at least one side of the substrate placing region at the periphery of the substrate placing region.

Description

The present invention relates to an apparatus for manufacturing a liquid crystal device for rubbing an alignment film, and a method for manufacturing the liquid crystal device.

The above-described liquid crystal device has a structure in which liquid crystal is sandwiched between an alignment film provided on one substrate and an alignment film provided on the other substrate. As a manufacturing method of such a liquid crystal device,
For example, as described in Patent Document 1 and Patent Document 2, it includes a step of rubbing the surface of the alignment film that defines the alignment state of the liquid crystal when no voltage is applied.

In the rubbing treatment, the alignment film is rubbed with a rubbing member wound around a rubbing roll to form grooves on the surface. The liquid crystal molecules have the property of being aligned along the grooves, thereby realizing the alignment treatment. On the other hand, when the rubbing treatment is performed, dust including shavings of the alignment film, broken hair of the rubbing member, and the like is generated. And this dust may adhere to an alignment film, and there exists a possibility of damaging an alignment film at the time of a rubbing process. Therefore, for example, as described in Patent Document 3, a method of providing a suction device in a portion where dust is generated (for example, in the vicinity of a rubbing roll) and sucking the generated dust is disclosed.

JP 2003-98528 A JP 2003-66456 A Japanese Patent Laid-Open No. 10-253961

However, in the method of Patent Document 3 described above, dust generated during the rubbing process can be sucked, but dust that cannot be sucked may accumulate in the peripheral region of the substrate.
Then, there is a problem that dust accumulated in the peripheral region adheres again to the rubbing roll or the alignment film due to static electricity or the like, and as a result, the alignment film may be damaged.

SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following forms or application examples.

Application Example 1 An apparatus for manufacturing a liquid crystal device according to this application example includes a liquid crystal layer sandwiched between a pair of substrates and an alignment film that is provided on one of the pair of substrates and is subjected to alignment treatment. An apparatus for manufacturing a liquid crystal device, comprising: a stage having a substrate placement area for placing at least one of the one substrates; and rubbing for rubbing the alignment film provided on the one substrate on the stage A roll and a first suction part having a suction port disposed along at least one side of the substrate placement region are provided around the substrate placement region.

According to this configuration, since the first suction unit is provided, even if dust generated during the rubbing process accumulates around the substrate placement region, it can be sucked and removed. Further, since the suction port is arranged along at least one side of the substrate placement area, dust accumulated in a portion closer to the substrate placement area can be sucked. As a result, it is possible to suppress the dust accumulated around the substrate placement area from adhering to the rubbing roll again and adversely affecting the rubbing process.

Application Example 2 In the liquid crystal device manufacturing apparatus according to the application example, the periphery of the substrate placement region has at least one step surface, and the suction port has a shape corresponding to the step of the step surface. It is preferable to provide.

According to this configuration, since the suction port corresponding to the step of the step surface is provided, it is possible to reduce variations in the suction force for sucking dust around the substrate placement region.

Application Example 3 In the liquid crystal device manufacturing apparatus according to the application example described above, the suction port may be divided so as to correspond to the stepped surfaces having different heights in the normal direction with respect to the surface of the stage. preferable.

According to this configuration, since the suction port is divided corresponding to the step surface, the gap between each step surface and the suction port can be unified to a predetermined gap. Therefore, it is possible to suck dust with a constant suction force at each portion of the step surface.

Application Example 4 In the liquid crystal device manufacturing apparatus according to the application example described above, it is preferable that the suction port includes a closed portion that is parallel and closed to the stepped surface and an open opening portion.

According to this configuration, a gas flow path can be created from the closed portion to the opening, and a constant flow rate can be ensured even on the step surface.

Application Example 5 In the liquid crystal device manufacturing apparatus according to the application example described above, a first moving mechanism that moves the first suction unit between a standby position in a predetermined direction of the stage and a position spaced from the standby position. It is preferable to provide.

According to this configuration, since the first moving mechanism is provided, the first suction unit can be moved to a position that does not interfere with the movement of the stage when the stage is moved to a position where each process is performed.

Application Example 6 In the liquid crystal device manufacturing apparatus according to the application example described above, a control unit is provided, and the control unit drives and controls the first moving mechanism, and the periphery of the substrate placement region, the suction port, It is preferable to move the first suction part with respect to the stage so as to face each other with a predetermined gap.

According to this configuration, since the gap between the periphery of the substrate placement area and the suction port is provided to be adjustable, the first suction unit and the periphery of the substrate placement area are confirmed while confirming the dust suction state. The gap may be adjusted. Therefore, the amount of dust accumulated around the substrate placement area can be reduced.

Application Example 7 In the liquid crystal device manufacturing apparatus according to the application example described above, the control unit includes the first controller.
It is preferable to control the suction time of the suction part.

According to this configuration, since the suction time is controlled by the control unit, for example, when there is a lot of dust accumulated around the substrate placement region, adjustment such as increasing the suction time can be performed.

Application Example 8 In the liquid crystal device manufacturing apparatus according to the application example, the liquid crystal device manufacturing apparatus includes an optical sensor that senses the amount of dust accumulated around the substrate placement area, and the control unit outputs an output from the optical sensor. It is preferable to control the suction time so that the predetermined time or more is reached.

According to this configuration, since the optical sensor and the control unit are provided, it is possible to control the suction time from the amount of dust accumulated around the substrate placement area.

Application Example 9 In the liquid crystal device manufacturing apparatus according to the application example, it is preferable that the substrate has a rectangular shape, and the first suction portion has a shape along at least one side of the substrate.

According to this configuration, even when the shape of the substrate is a square shape, the first suction part is formed along the shape of one side of the substrate, so that it is possible to suck dust deposited on a portion closer to the substrate. it can.

Application Example 10 In the liquid crystal device manufacturing apparatus according to the application example, it is preferable that the substrate has a circular shape, and the first suction portion has a shape along at least one side of the substrate.

According to this configuration, even when the shape of the substrate is circular, the first suction part is formed along the shape of one side of the substrate, so that it is possible to suck dust deposited on a portion closer to the substrate. it can.

Application Example 11 In the liquid crystal device manufacturing apparatus according to the application example described above, it is preferable that the first suction portion is disposed on the downstream side in the rubbing direction.

According to this configuration, since the first suction part is disposed on the downstream side in the rubbing direction, the rubbing cloth can suck the dust that has been scraped up by rubbing the substrate to be processed in a predetermined direction.

Application Example 12 In the liquid crystal device manufacturing apparatus according to the application example described above, it is preferable that the control unit drives and controls a first moving mechanism that moves the stage with respect to the first suction unit.

According to this configuration, since the stage moves with respect to the first suction unit, the area of the first suction unit is reduced as compared to opening the suction port so as to cover the entire periphery of the substrate placement region. It becomes possible to do. Accordingly, the liquid crystal device manufacturing apparatus can be made more compact.

Application Example 13 In the liquid crystal device manufacturing apparatus according to the application example described above, it is preferable that a second suction part in which a suction port is disposed in the vicinity of the peripheral surface of the rubbing roll is provided.

According to this configuration, in addition to the first suction portion provided in the periphery of the substrate placement area, the second suction portion is provided in the vicinity of the peripheral surface of the rubbing roll. It is possible to suck more.

Application Example 14 A method of manufacturing a liquid crystal device according to this application example includes: a liquid crystal layer sandwiched between a pair of substrates; and an alignment film that is provided on one of the pair of substrates and is subjected to an alignment process. A mounting step of mounting at least one of the one substrates on a substrate mounting region, and an alignment treatment by rubbing the alignment film of the one substrate in a predetermined direction. And a rubbing process step, wherein the rubbing process step includes a sucking step of sucking dust adhering to the periphery of the substrate placement area along at least one side of the substrate placement area.

According to this method, since the dust adhering to the periphery of the substrate placement area along at least one side of the substrate placement area is sucked by the suction process, the dust generated by the rubbing process is accumulated around the substrate placement area. Can be removed by suction. Thereby, it is possible to suppress the dust accumulated around the substrate placement area from adversely affecting the rubbing process again.

Application Example 15 In the method for manufacturing a liquid crystal device according to the application example, it is preferable that the suction step is performed at least for each rubbing process.

According to this method, since suction is performed for each rubbing process, it is possible to always reduce the amount of dust deposited around the substrate placement area by the rubbing process. Therefore, it is possible to suppress the accumulated dust from adversely affecting the rubbing process.

Application Example 16 In the method of manufacturing a liquid crystal device according to the application example, it is preferable that the suction step is performed while air is sent from the substrate side toward the periphery of the substrate placement area.

According to this method, since air is sucked while being blown (applied) around the substrate, dust that cannot be removed only by suction can be more easily removed.

1 is a schematic plan view illustrating a structure of a liquid crystal device according to a first embodiment. FIG. 2 is a schematic cross-sectional view taken along line AA ′ of the liquid crystal device illustrated in FIG. 1. FIG. 3 is an equivalent circuit diagram illustrating an electrical configuration of the liquid crystal device. FIG. 4 is a schematic cross-sectional view illustrating a structure of a pixel included in the liquid crystal device. The schematic plan view which shows the structure of a mother board | substrate. It is a schematic diagram which shows the structure of a rubbing apparatus, (a) is a perspective view which shows the structure of a rubbing apparatus, (b) is a schematic plan view which looked at the pallet which comprises a rubbing apparatus from upper direction, (c) is (b). The schematic sectional drawing which follows the BB 'cross section of the pallet shown in FIG. (A)-(d) is a schematic plan view which shows the condition when the stage which comprises a rubbing apparatus moves to each position. It is a schematic cross section which shows the structure of a rubbing apparatus, (a), (b) is a schematic cross section which shows the condition when a stage moves to each position. The block diagram which shows the mechanical and electrical structure of a rubbing apparatus. Process drawing which shows the manufacturing method of a liquid crystal device in order of a process. Process drawing which shows the manufacturing method of the 2nd alignment film in detail among the manufacturing methods of a liquid crystal device. It is a schematic diagram which shows the structure of the rubbing apparatus of 2nd Embodiment, (a) is a schematic plan view which shows the structure of the rubbing apparatus in a 1st position, (b) is CC 'of the rubbing apparatus shown to (a). The schematic cross section which follows a cross section. It is a schematic diagram which shows the structure of the rubbing apparatus of 3rd Embodiment, (a) is a schematic plan view which shows the structure of the rubbing apparatus in a 1st position, (b) is DD 'of the rubbing apparatus shown to (a). The schematic cross section which follows a cross section. It is a schematic diagram which shows the modification of the structure of a rubbing apparatus, (a) is a schematic plan view which shows the structure of the rubbing apparatus in a 1st position, (b) is EE 'cross section of the rubbing apparatus shown to (a). FIG.

(First embodiment)
<Configuration of liquid crystal device>
FIG. 1 is a schematic plan view showing the structure of the liquid crystal device. 2 shows an A- of the liquid crystal device shown in FIG.
It is a schematic cross section along an A 'line. Hereinafter, the structure of the liquid crystal device will be described with reference to FIGS.

As shown in FIGS. 1 and 2, the liquid crystal device 11 includes, for example, a thin film transistor (hereinafter, “
This is referred to as a TFT (Thin Film Transistor) element. ) Is a TFT active matrix type liquid crystal device using pixel switching elements. In the liquid crystal device 11, an element substrate 12 and a counter substrate 13 constituting a pair of substrates are bonded together via a sealing material 14 having a substantially rectangular frame shape in plan view.

The element substrate 12 and the counter substrate 13 are made of a translucent material such as glass or quartz, for example. The liquid crystal device 11 has a configuration in which a liquid crystal layer 15 is enclosed in a region surrounded by a sealing material 14. The sealing material 14 is provided with a liquid crystal injection port 16 for injecting liquid crystal, and the liquid crystal injection port 16 is sealed with a sealing material 17.

As the liquid crystal layer 15, for example, a liquid crystal material having a positive dielectric anisotropy is used. In the liquid crystal device 11, a frame light shielding film 18 having a rectangular frame shape made of a light shielding material is formed on the counter substrate 13 along the vicinity of the inner periphery of the sealing material 14, and an area inside the frame light shielding film 18 is formed. It is a display area 19.

The frame light shielding film 18 is made of, for example, aluminum (Al), which is a light shielding material, and is provided so as to partition the outer periphery of the display region 19 on the counter substrate 13 side.

In the display area 19, pixel areas 21 are provided in a matrix. The pixel area 21 constitutes one pixel that is the minimum display unit of the display area 19. In the region outside the sealing material 14, the signal line driving circuit 22 and the external connection terminal 23 are formed along one side (the lower side in FIG. 1) of the element substrate 12.

Further, scanning line driving circuits 24 are formed in the inner region of the sealing material 14 along two sides adjacent to the one side. On the remaining side of the element substrate 12 (upper side in FIG. 1),
An inspection circuit 25 is formed. The frame light shielding film 18 formed on the counter substrate 13 side is formed, for example, at a position facing the scanning line driving circuit 24 and the inspection circuit 25 formed on the element substrate 12 (in other words, a position overlapping in plan). ing.

On the other hand, vertical conduction terminals 26 for providing electrical conduction between the element substrate 12 and the counter substrate 13 are disposed at each corner of the counter substrate 13 (for example, four corners of the sealing material 14). Has been.

As shown in FIG. 2, a plurality of pixel electrodes 27 are formed on the element substrate 12 on the liquid crystal layer 15 side, and a first alignment film 28 is formed so as to cover the pixel electrodes 27. The pixel electrode 27 is a conductive film made of a transparent conductive material such as ITO (Indium Tin Oxide).

On the other hand, a lattice-shaped light shielding film (BM: black matrix) (not shown) is formed on the liquid crystal layer 15 side of the counter substrate 13, and a flat solid common electrode 31 is formed thereon. A second alignment film 32 is formed on the common electrode 31. The common electrode 31 is a conductive film made of a transparent conductive material such as ITO. The first alignment film 28 and the second alignment film 3 described above.
2 is formed using the rubbing apparatus mentioned later.

The liquid crystal device 11 is of a transmissive type, and is used with a polarizing plate (not shown) or the like disposed on the light incident side and the light emitting side of the element substrate 12 and the counter substrate 13, respectively. The liquid crystal device 11
The configuration is not limited to this, and may be a reflective type or a transflective type.

FIG. 3 is an equivalent circuit diagram showing an electrical configuration of the liquid crystal device. Hereinafter, the electrical configuration of the liquid crystal device will be described with reference to FIG.

As shown in FIG. 3, the liquid crystal device 11 has a plurality of pixel regions 21 that constitute a display region 19. A pixel electrode 27 is disposed in each pixel region 21. A TFT element 33 is formed in the pixel region 21.

The TFT element 33 is a switching element that controls energization of the pixel electrode 27. A signal line 34 is electrically connected to the source side of the TFT element 33. Image signals S1, S2,..., Sn are supplied to each signal line 34 from, for example, the signal line drive circuit 22 (see FIG. 1).

A scanning line 35 is electrically connected to the gate side of the TFT element 33. The scanning lines 35 are supplied with scanning signals G1, G2,..., Gm in a pulsed manner at a predetermined timing from, for example, the scanning line driving circuit 24 (see FIG. 1). Further, the pixel electrode 27 is electrically connected to the drain side of the TFT element 33.

.., Gm supplied from the scanning line 35 causes the TFT element 33 serving as a switching element to be in an ON state for a certain period, so that the image signals S1, S2,. , Sn are written to the pixel region 21 via the pixel electrode 27 at a predetermined timing.

Image signals S1, S2,..., Sn written in the pixel area 21 are held for a certain period by a liquid crystal capacitor formed between the pixel electrode 27 and the common electrode 31 (see FIG. 2). In order to prevent the retained image signals S1, S2,..., Sn from leaking, the pixel potential side capacitor electrode 55 electrically connected to the pixel electrode 27 and the shield layer 5 which is an example of a capacitor line.
A storage capacitor 37 (see FIG. 4) is formed between the capacitor electrode 36 and the capacitor electrode 36 electrically connected to the capacitor 7.

Thus, when a voltage signal is applied to the liquid crystal layer 15, the alignment state of the liquid crystal molecules changes according to the applied voltage level. Thereby, the light incident on the liquid crystal layer 15 is modulated to generate image light.

FIG. 4 is a schematic cross-sectional view showing the structure of the liquid crystal device. Hereinafter, the structure of the liquid crystal device will be described with reference to FIG. In addition, FIG. 4 shows the cross-sectional positional relationship of each component,
Expressed on an explicit scale.

As shown in FIG. 4, the liquid crystal device 11 includes an element substrate 12 and a counter substrate 13 disposed to face the element substrate 12. As described above, the element substrate 12 and the counter substrate 13 are configured by, for example, a quartz substrate or a glass substrate.

On the element substrate 12, a lower light-shielding film 51 made of Ti (titanium), Cr (chromium), or the like is formed. The lower light-shielding film 51 is patterned in a lattice shape in a plane and defines an opening area of each pixel. A base insulating film 52 made of a silicon oxide film or the like is formed on the element substrate 12 and the lower light shielding film 51.

On the base insulating film 52, the TFT element 33, the scanning line 35, and the like are formed. The TFT element 33 has, for example, an LDD (Lightly Doped Drain) structure, a semiconductor layer 41 made of polysilicon or the like, a gate insulating film 53 formed on the semiconductor layer 41, and a gate insulating film 53 on the gate insulating film 53. And a scanning line 35 made of a formed polysilicon film or the like. As described above, the scanning line 35 functions as a gate electrode.

The semiconductor layer 41 includes a channel region 41a, a low concentration source region 41b, a low concentration drain region 41c, a high concentration source region 41d, and a high concentration drain region 41e.
A channel is formed in the channel region 41 a by an electric field from the scanning line 35. A first interlayer insulating film 54 made of a silicon oxide film or the like is formed on the base insulating film 52.

On the first interlayer insulating film 54, a storage capacitor 37, a signal line 34, and the like are provided. The storage capacitor 37 includes a relay layer 55 as a pixel potential side capacitor electrode connected to the high concentration drain region 41e of the TFT element 33 and the pixel electrode 27, and a capacitor electrode 36 as a fixed potential side capacitor electrode. 56 to face each other.

The capacitor electrode 36 and the signal line 34 are formed as a film having a two-layer structure of a conductive polysilicon film A1 in the lower layer and an aluminum film A2 in the upper layer.

Since the capacitor electrode 36 and the signal line 34 include aluminum that is relatively excellent in light reflection performance and include polysilicon that is relatively excellent in light absorption performance, the capacitance electrode 36 and the signal line 34 can function as a light shielding layer. Therefore, it is possible to block the progress of incident light on the semiconductor layer 41 of the TFT element 33 on its upper side.

Such a capacitor electrode 36 functions as a fixed potential side capacitor electrode of the storage capacitor 37. In order to set the capacitor electrode 36 to a fixed potential, as described above, the capacitor electrode 36 is electrically connected via the contact hole 58 and the shield layer 57 that is set to a fixed potential by being connected to a constant potential source outside the pixel region 21. It is made by being connected.

A contact hole 61 that electrically connects the high concentration source region 41 d of the TFT element 33 and the signal line 34 is formed in the first interlayer insulating film 54. In other words, the signal line 34 is connected to the TF via the contact hole 61 that penetrates the dielectric film 56 and the first interlayer insulating film 54.
The semiconductor layer 41 of the T element 33 is electrically connected. Specifically, the signal line 34 has the two-layer structure as described above, and the relay layer 55 is made of a conductive polysilicon film, so that the electrical connection between the signal line 34 and the semiconductor layer 41 is as follows. This is realized by a conductive polysilicon film. That is, the semiconductor layer 41, the polysilicon film of the relay layer 55, the polysilicon film A1 below the signal line 34, and the aluminum film A2 above it are formed in order from the bottom.

The first interlayer insulating film 54 has a contact hole 62 that electrically connects the high-concentration drain region 41 e of the TFT element 33 and the relay layer 55 constituting the storage capacitor 37. A second interlayer insulating film 63 made of a silicon oxide film or the like is formed on the first interlayer insulating film 54.

On the second interlayer insulating film 63, a shield layer 57 made of, for example, aluminum is formed. Further, as described above, the contact hole 58 for electrically connecting the shield layer 57 and the capacitive electrode 36 is formed in the second interlayer insulating film 63. A third interlayer insulating film 64 made of a silicon oxide film or the like is formed on the second interlayer insulating film 63.

Contact holes 65 and 66 for electrically connecting the pixel electrode 27 and the relay layer 55 are formed in the second interlayer insulating film 63 and the third interlayer insulating film 64. Specifically, the contact hole 65 and the contact hole 66 are electrically connected through the second relay layer 67 formed on the second interlayer insulating film 63. The second relay layer 67 has the same film configuration as the shield layer 57 and has a two-layer structure in which an aluminum film is formed in the lower layer and a titanium nitride film is formed in the upper layer.

That is, the high concentration drain region 41 e and the pixel electrode 27 are electrically connected through the contact hole 62, the relay layer 55, the contact hole 65, the second relay layer 67, and the contact hole 66. On the third interlayer insulating film 64, the pixel electrode 27 and the first alignment film 28 described above are formed.

The pixel electrode 27 is formed in a matrix in a planar manner, and is made of a transparent conductive film such as an ITO film, for example. On the pixel electrode 27, a first alignment film 28 that has been subjected to an alignment process in a predetermined direction by rubbing is formed. The first alignment film 28 is made of a transparent organic film such as a polyimide film, for example.

On the first alignment film 28, a liquid crystal layer 15 in which an electro-optical material such as liquid crystal is sealed is provided in a space surrounded by the sealing material 14 (see FIG. 1). On the side of the counter substrate 13 facing the liquid crystal layer 15, a second alignment film 32 that covers the transparent common electrode 31 and is subjected to alignment processing in a predetermined direction by rubbing is formed. The second alignment film 32 is made of a transparent organic film such as a polyimide film, for example.

The liquid crystal layer 15 takes a predetermined alignment state by the first alignment film 28 and the second alignment film 32 in a state where an electric field from the pixel electrode 27 is not applied. The sealing material 14 is an adhesive made of, for example, a photocurable resin or a thermosetting resin, for bonding the element substrate 12 and the counter substrate 13 around them, and a distance between the two substrates is set to a predetermined value. Spacers such as glass fiber or glass beads are mixed. Hereinafter, the mother substrate before becoming the liquid crystal device 11 will be described.

FIG. 5 is a schematic plan view showing the configuration of the mother board. Hereinafter, the configuration of the mother board is shown in FIG.
Will be described with reference to FIG.

As shown in FIG. 5, in the liquid crystal device 11, for example, a counter substrate 13 is individually bonded to a mother substrate 102 on which a plurality of element substrates 12 are provided, and liquid crystal is injected and sealed in the gaps. After stopping, the liquid crystal device 11 is taken out by cutting it at a predetermined position.

The mother substrate 102 is, for example, a wafer shape having a size of 8 inches and a thickness of 1.2 m.
m quartz substrate. The quadrangular (rectangular) element substrate 12 is applied to the surface of the mother substrate 102 in a matrix. One element substrate 12 has a diagonal length of about 1 inch. In this case, the number of impositions is 40.

The wafer shape is not limited to a planar shape as shown in FIG. 5 and is a concept including, for example, an orientation flat having a part of the circumference cut out.

In the liquid crystal device 11, the second alignment film 32 on the counter substrate 13 side is subjected to an alignment process to which a liquid crystal device manufacturing apparatus and a liquid crystal device manufacturing method of the present embodiment described later are applied. Hereinafter, a structure of a rubbing apparatus that performs an alignment process on the second alignment film 32 in a predetermined direction will be described.

<Configuration of liquid crystal device manufacturing apparatus>
FIG. 6 is a schematic diagram showing the structure of a rubbing device as a liquid crystal device manufacturing apparatus. (A)
FIG. 3 is a perspective view showing a structure of a rubbing device. (B) is the schematic top view which looked at the pallet which comprises a rubbing apparatus from upper direction. (C) is a schematic cross section along the BB ′ cross section of the pallet shown in (b). FIGS. 7A to 7D are schematic plan views showing the situation when the stage constituting the rubbing apparatus moves to each position. 8A and 8B are schematic cross-sectional views showing the structure of the rubbing apparatus. Hereinafter, the structure of the rubbing apparatus will be described with reference to FIGS.
Will be described with reference to FIG.

Note that the substrate to be rubbed will be described as a substrate 101 to be processed. In particular,
The substrate 101 to be processed is the counter substrate 13 on which the second alignment film 32 that is one of the pair of substrates is formed.

As shown in FIGS. 6 to 8, the rubbing device 71 includes, for example, a pallet 72 for storing a plurality of substrates to be processed 101 side by side, a stage 73 for placing the pallet 72, and a substrate transport for moving the pallet 72. Machine 74, rubbing roll 75 in which rubbing cloth 75a is wound and rotated in a predetermined direction, and first suction unit 76 and second suction unit 77 for sucking and removing dust 200 generated when the rubbing process is performed. And. The area on the stage 73 where the pallet 72 is placed is referred to as a substrate placement area (area surrounded by a broken line shown in FIG. 7D).

The stage 73 is used for placing and fixing the pallet 72 in order to perform a rubbing process on the substrate 101 to be processed. The stage 73 is provided with a suction part (not shown) for sucking and fixing the substrate 101 to be processed. Further, the stage 73 has a moving mechanism 91 that moves the stage 73 relative to the rubbing roll 75 in a predetermined direction (arrow direction: see FIGS. 6A and 7C), and controls these. A control unit 92 is provided. Stage 7
3 is provided to be able to move from the first position 81 to the fourth position 84.

The pallet 72 is obtained by cutting a plate-like member such as aluminum, and has a plurality of recesses 72a provided on the surface according to the shape and size of the substrate 101 to be processed, and the recesses 72a. And a suction port 72b provided near the center of the bottom surface. In the plan view, a plurality of rectangular recesses 72a are arranged along the short side and the long side of the pallet 72, and in this case, five in the vertical direction along the short side and 8 in the horizontal direction along the long side. A total of 40 pieces are provided.

As shown in FIG. 6C, the recess 72a is provided with a depth that allows the surface of the substrate to be processed 101 to slightly protrude from the surface of the pallet 72 when the substrate to be processed 101 is placed on the bottom surface thereof. ing. The substrate 101 to be processed is disposed so as to be accommodated in the concave portion 72a of the pallet 72, and is sucked and fixed by the suction means.

The first position 81 (see FIG. 7A) is, for example, the home position of the stage 73. Further, at the first position 81, the dust 200 accumulated on the stage 73 is sucked. In the second position 82 (see FIG. 7B), the substrate 1 to be processed before the rubbing process.
The pallet 72 in which 01 is arranged is carried in. In the third position 83 (see FIG. 7C), the substrate to be processed 101 is rubbed. Fourth position 84 (FIG. 7D)
In the reference), the pallet 72 on which the substrates to be processed 101 after the rubbing process are arranged is carried out.

The substrate transfer device 74 is used to place the unprocessed pallet 72 on the stage 73 at the second position 82. The substrate transporter 74 is used to carry out the processed pallet 72 placed on the stage 73 from the stage 73 to the outside at the fourth position 84. The substrate transporter 74 is provided with two arms 74a that can slide and move in order to sandwich and release the pallet 72.

The rubbing roll 75 is disposed above the stage 73 at the third position 83. The rubbing roll 75 is formed in a cylindrical shape, and is provided so as to be rotatable about the center of the circle. A rubbing cloth 75 a made of, for example, rayon is attached to the peripheral surface of the rubbing roll 75.

The stage 73 and the rubbing roll 75 are provided such that they can be moved relative to each other. Here, for example, the stage 73 moves horizontally in the arrow direction with respect to the rubbing roll 75. Further, at least one of the stage 73 and the rubbing roll 75 can move in the vertical direction. Here, the rubbing roll 75 can move in the vertical direction (vertical direction) with respect to the stage 73. Further, the rubbing roll 75 and the stage 73 are positioned in the vertical direction so that the rubbing pressure on the substrate 101 to be processed by the rubbing cloth 75a becomes a predetermined value.

The first suction portion 76 is disposed at a first position 81 on the downstream side in the rubbing direction. Specifically, the first suction unit 76 removes the dust 200 accumulated on the stage 73 when the rubbing process is performed. For example, the first suction unit 76 stands by above the stage 73 when the stage 73 moves to each position. In addition, after the rubbing process is completed at the third position 83, the first suction unit 76 descends from the standby position to suck the dust 200 when the stage 73 returns to the first position 81.

In addition, the first suction unit 76 has side parts 72 c and 7 of the pallet 72 placed on the stage 73.
The suction port 76a is provided so as to cover a region from the region along 2d (one side) and 72e to the vicinity of one end 73a of the stage 73. That is, the first suction unit 76 (suction port 76a) is a region where the dust 200 scraped up by the rubbing roll 75 in the peripheral region of the pallet 72 (periphery of the substrate placement region) easily accumulates (hereinafter referred to as “peripheral region”). 78 ”). In this way, the sides (72c, 72d) of the pallet 72 (substrate 101).
72e), the suction port 76a is formed, so that the dust 200 deposited on the portion closer to the pallet 72 (substrate to be processed 101) can be sucked.

In addition, since the 1st suction part 76 may incline and arrange | position the rubbing roll 75 with the orientation direction of the 2nd alignment film 32, it is desirable to cover to the side (side part 72c, 72e) of the pallet 72. . That is, it is desirable that the first suction portion 76 includes a main body portion disposed along the side portion 72d and an extending portion disposed along the side portions 72c and 72e from the main body portion. Thereby, it is possible to suck the dust 200 accumulated near the side of the pallet 72.

Further, the gap between the suction port 76a and the stage 73 when sucking the dust 200 is, for example,
It is about 2 mm to 3 mm. The gap between the pallet 72 and the suction port 76a is, for example, 5
It is about mm. The first suction unit 76 exhausts the sucked dust 200 through the exhaust port 85. The first suction unit 76 includes a moving mechanism 93 (first moving mechanism) that moves the suction port 76a relative to the stage 73 in a predetermined direction, and a control unit 92 that controls these mechanisms. Yes. Thereby, the gap between the suction port 76a and the stage 73, the suction pressure and the suction time can be set as appropriate.

The second suction part 77 is disposed above the rubbing roll 75 at the third position 83. Specifically, the second suction unit 77 performs the rubbing roll 7 when the rubbing process is performed.
The dust 200 in the vicinity of the peripheral surface 5 is removed. The distance between the rubbing roll 75 and the second suction part 77 is about 1 mm.

FIG. 9 is a block diagram showing a mechanical and electrical configuration of the rubbing apparatus. Hereinafter, the mechanical and electrical configuration of the rubbing apparatus will be described with reference to FIG.

As shown in FIG. 9, the control unit 92 drives and controls a rotation mechanism 94 such as a servo motor attached to the rubbing roll 75 to drive the rubbing roll 75 in a predetermined direction at a predetermined rotation speed (unit time). Rotate at a per revolution).

Further, the moving mechanism 91 provided on the stage 73 is driven and controlled to move the stage 73 relative to the rubbing roll 75 at a predetermined speed. Further, the moving mechanism 93 provided in the first suction unit 76 is driven and controlled to move the first suction unit 76 relative to the stage 73. Thereby, the clearance gap between the suction opening 76a and the stage 73 can be set. Further, the control unit 92 controls the suction time and suction pressure of the dust 200 by the first suction unit 76. Next, a method for manufacturing the liquid crystal device 11 will be described.

<Method for manufacturing liquid crystal device>
FIG. 10 is a process diagram illustrating the manufacturing method of the liquid crystal device in the order of processes. FIG. 11 is a process diagram illustrating in detail a method for manufacturing the second alignment film in the method for manufacturing a liquid crystal device. Hereinafter, a method for manufacturing the liquid crystal device will be described with reference to FIGS.

First, a manufacturing method on the element substrate 12 side will be described. In step S11, a TFT element 33 (see FIG. 3) and the like are formed on the element substrate 12. Specifically, the TFT element 33 is formed on the element substrate 12 using a well-known film forming technique, photolithography technique, and etching technique. Thereafter, up to the third interlayer insulating film 64 is formed using the same method.

In step S12, the pixel electrode 27 is formed. Specifically, the pixel electrode 27 is formed on the third interlayer insulating film 64 by using a well-known film forming technique, photolithography technique, and etching technique.

In step S <b> 13, the first alignment film 28 is formed on the pixel electrode 27. The first alignment film 28 is formed by, for example, applying an organic solution containing polyimide or polyamic acid as an alignment film material, and performing drying and baking to remove the solvent component. Examples of the coating method include spin coating and slit coating, and printing methods such as offset. After that, the first film formed
The alignment film 28 is rubbed. Note that a method for performing the rubbing process on the first alignment film 28 on the element substrate 12 side will be described in a modification described later. Thus, the element substrate 12 side is completed.

Next, a manufacturing method on the counter substrate 13 side will be described. First, in step S21, the common electrode 31 is formed on the counter substrate 13 made of a light-transmitting material such as glass or quartz by using a well-known film forming technique, photolithography technique, and etching technique.

In step S <b> 22, the second alignment film 32 is formed on the common electrode 31. In addition, the formation method of the 2nd alignment film 32 is demonstrated, referring process drawing shown in FIG. Further, the second alignment film 32
The substrate up to the formation of the substrate will be referred to as a substrate 101 to be processed.

First, as described above, as a method of forming the second alignment film 32 on the substrate 101 to be processed,
For example, an organic solution containing polyimide or polyamic acid as an alignment film material is applied, and drying and baking are performed to remove the solvent component.

In step S221 (placement step), the rubbing apparatus 71 receives the substrate 101 to be processed. Specifically, as described above, the pallet 7 in which a plurality of substrates to be processed 101 are arranged.
2 is placed on the stage 73 of the rubbing apparatus 71. First, the stage 73 is moved from the first position 81 to the second position 82 where the pallet 72 is transferred. next,
The pallet 72 is placed on the stage 73 using the substrate transporter 74. Then stage 7
The pallet 72 is adsorbed on the surface of the stage 73 by the adsorbing portion provided in the No. 3.

In step S222 (rubbing process step), a rubbing process is performed. Specifically, first, the rotating rubbing roll 75 is lowered and the rubbing cloth 7 on the peripheral surface of the rubbing roll 75 is moved.
The rubbing process is started when 5a reaches a position where it can contact the substrate 101 to be processed.

Specifically, the rubbing cloth 75a and the substrate 10 to be processed are applied to the rotating rubbing roll 75.
The first alignment film 32 is rubbed by the rubbing cloth 75a by the relative movement of the stage 73 in a predetermined direction in a state where it is in contact with the first alignment film 32 (second alignment film 32), and a rubbing process is performed. The rubbing cloth 75a, the pallet 72, and the substrate to be processed 101 come into contact with each other during the rubbing process, so that the rubbing hair 75 of the rubbing cloth 75a is mainly broken or removed.
Will occur. Part of the generated dust 200 is the second disposed above the rubbing roll 75.
Suction is performed by the suction unit 77. The remaining part of the dust 200 scatters and adheres to the peripheral area 78 of the pallet 72 on the stage 73.

In step S223, the pallet 72 is peeled off. Specifically, the suction operation of the pallet 72 by the suction unit is canceled, and the pallet 72 sucked on the surface of the stage 73 is brought into a free state. Next, the pallet 72 is transferred from the stage 73 to the outside by using the substrate transfer device 74.

In step S224, the stage 73 is moved from the fourth position 84 to the first position 81, which is the home position. That is, the dust 200 accumulated in the peripheral region 78 on the stage 73 is moved to a position where it can be sucked. Further, in step S225, the first suction unit 76 is lowered from the standby position above the stage 73.

In step S226 (suction process), the dust 200 deposited on the stage 73 is sucked. Specifically, by lowering the first suction unit 76, the region (peripheral region 78) excluding the region of the pallet 72 placed on the stage 73 is covered with the suction port 76 a of the first suction unit 76. In addition, the position of the first suction part 76 is adjusted. Further, the vertical direction is adjusted so that the gap between the suction port 76a and the stage 73 is about 2 mm to 3 mm. Thereafter, the first suction part 76
As a result, the dust 200 accumulated on the stage 73 is sucked for a predetermined time.

The suction operation of the dust 200 by the first suction unit 76 may be determined according to the amount of dust 200 generated. For example, the suction operation may be performed every time one pallet is replaced, or each rubbing process (1 Each time the stage 73 is moved).

Thus, in addition to the suction of the dust 200 by the second suction unit 77, the dust 2 deposited on the peripheral region 78 of the substrate 101 (pallet 72) on the stage 73 by the first suction unit 76.
00 is sucked, and further, the first suction part 76 (suction port 76a) and the stage 73 are arranged so as to have a predetermined gap, so that the suction speed is made uniform over the entire peripheral region 78. Therefore, the accumulated dust 200 can be sucked stably. as a result,
It can be suppressed that the dust 200 deposited on the peripheral region 78 adheres to the rubbing roll 75 again and adversely affects the rubbing process.

In step S227, the first suction unit 76 is raised. Specifically, after the dust 200 accumulated on the stage 73 is sucked, the process returns to step S221 again to start a rubbing process on a new substrate 101 (pallet 72). The first suction part 76 is raised to a position where it does not become. Thus, the counter substrate 13 is completed. Hereinafter, a method of bonding the element substrate 12 and the counter substrate 13 will be described with reference to the process diagram shown in FIG.

In step S <b> 31, the sealing material 14 is applied on the counter substrate 13. Specifically, the relative positional relationship between the counter substrate 13 and the dispenser (also possible with a discharge device) is changed, and the sealing material 14 is placed around the display area 19 on the counter substrate 13 (so as to surround the display area 19). Apply.

In step S32, the element substrate 12 and the counter substrate 13 are bonded together. Specifically, the element substrate 12 and the counter substrate 13 are bonded together via the sealing material 14 applied to the counter substrate 13. More specifically, it is performed while ensuring the positional accuracy in the vertical and horizontal directions of the substrates 12 and 13.

In step S33, liquid crystal is injected into the structure from the liquid crystal injection port 16 (see FIG. 1).
Thereafter, the liquid crystal injection port 16 is sealed. For sealing, for example, a sealing material 17 such as a resin is used. Thus, the liquid crystal device 11 is completed.

  As described above in detail, according to the first embodiment, the following effects can be obtained.

(1) According to the first embodiment, the first suction unit 76 that covers the peripheral region 78 of the substrate 101 to be processed.
Therefore, even if the dust 200 generated when the substrate to be processed 101 and the rubbing cloth 75a are brought into contact with each other (rubbing treatment) is accumulated in the peripheral region 78, it can be sucked and removed. Furthermore, since the first suction part 76 is provided so as to have a predetermined gap from the stage 73, the suction speed can be made uniform over the entire peripheral region 78, and the accumulated dust 200 can be stabilized. Can be aspirated. As a result, it is possible to suppress the dust 200 accumulated in the peripheral region 78 from adhering to the rubbing roll 75 again and adversely affecting the rubbing process.

(2) According to the first embodiment, even when the shape of the pallet 72 (substrate to be processed 101) is a square shape, the first suction portion 76 is formed along the shape of the side portions 72c, 72d, 72e of the pallet 72.
Therefore, the dust 200 deposited on the portion closer to the substrate 101 can be sucked.

(Second Embodiment)
<Liquid crystal device manufacturing equipment>
FIG. 12 is a schematic diagram illustrating the structure of the rubbing apparatus according to the second embodiment. (A) is a schematic plan view which shows the structure of the rubbing apparatus in a 1st position. (B) is a schematic cross section which follows the CC 'cross section of the rubbing apparatus shown to (a). Hereinafter, the structure of the rubbing apparatus will be described with reference to FIG.

The rubbing apparatus 201 according to the second embodiment is different from the first embodiment in that the structure of the first suction unit 203 is changed corresponding to the case where the stage 202 has a step. Less than,
The same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted or simplified here.

As shown in FIG. 12, in the rubbing apparatus 201 according to the second embodiment, a stage 202 on which the pallet 72 is placed is provided with a step surface (a difference in height in the normal direction with respect to the stage 202 surface). Specifically, the stage 202 is the first stage 20 to which the pallet 72 is attached.
4, a second stage 205 that rotates the first stage 204 including the pallet 72, and the first
And a third stage 206 that supports the stage 204 and the second stage 205.

As described above, the first stage 204 is provided with a suction portion, and a pallet 72 on which a plurality of substrates to be processed 101 are arranged is fixed by suction. The first stage 204 is fixed to the second stage 205.

For example, the second stage 205 can rotate along a guide hole 206 a formed in the third stage 206. By rotating the second stage 205,
The direction in which the rubbing process is performed on the pallet 72 (the substrate to be processed 101) can be changed. For example, the alignment films 28 and 32 that have been subjected to the rubbing process in a necessary direction can be formed.

However, for example, after the rubbing process is performed a plurality of times, the second stage 205 is rotated by 180 °, and then the rubbing process is performed. In this case, the rubbing roll 75 is moved to the stage 20
When approaching 2, the dust 200 accumulated on one side 202 a of the stage 202 approaches the rubbing roll 75, and problems such as the dust 200 adhering to the rubbing roll 75 again due to static electricity or the like are likely to occur.

However, the dust 200 accumulated by the first suction unit 203 before the rubbing process is performed.
Therefore, it is possible to suppress the occurrence of problems such as the accumulated dust 200 adhering to the rubbing roll 75 again.

The first suction unit 203 is planarly surrounded by a peripheral region 78 of the pallet 72 (substrate to be processed 101).
It is comprised so that it may cover. In addition, the first suction unit 203 has a cross section in the stage 202.
A step-shaped suction port 207 is formed along the step surface (shape) of the (first stage 204 to third stage 206).

Specifically, when sucking the dust 200, the suction port 207 has a first block 207 a that is close to the surface of the first stage 204 in the peripheral region 78 and a second block that is close to the exposed surface 205 a of the second stage 205. It has a block 207b and a third block 207c and a fourth block 207d proximate to the surface 206b of the third stage 206.

That is, the suction port 207 is divided corresponding to the step surface. Each block 207
In the a to block 207d, the surfaces facing the step surfaces are provided in parallel. 1st block 2
07a to fourth block 207d are arranged with a predetermined gap H from the adjacent stage 202, respectively. The predetermined gap H is, for example, about 2 mm to 3 mm.

Moreover, between each block 207a-207d, the opening hole 208 (opening part) used as the flow path at the time of attracting | sucking the dust 200 is provided. In this way, the entire suction port 207 is not open, but by combining the blocks 207a to 207d and the opening hole 208, the blocks 207a to 207d (blocking portions) closed to the opening hole 208 are combined. It is possible to create a gas flow path.

Furthermore, since the flow path (opening hole 208) is narrowed, the flow rate is increased and the dust 200 can be easily sucked. Thus, even when the stage 202 has a step,
A constant flow path can be secured on the step surface.

As described above in detail, according to the second embodiment, (1) and (2) of the first embodiment described above.
In addition to the effects described above, the following effects can be obtained.

(3) According to the second embodiment, since the suction port 207 of the first suction unit 203 is divided corresponding to the stepped surface of the stage 202, the gas flow path from the closed part to the opening hole 208 The gap H between each step surface and the suction port 207 can be made a predetermined gap. Therefore, it is possible to ensure a constant flow velocity in each part of the step surface, and it is possible to suck the dust 200 that accumulates.

(Third embodiment)
<Liquid crystal device manufacturing equipment>
FIG. 13 is a schematic diagram showing the structure of the rubbing apparatus of the third embodiment. (A) is a schematic plan view which shows the structure of the rubbing apparatus in a 1st position. (B) is a schematic cross section which follows the DD 'cross section of the rubbing apparatus shown to (a). Hereinafter, the structure of the rubbing apparatus will be described with reference to FIG.

Note that the rubbing apparatus 301 according to the third embodiment differs from the first embodiment in that the stage 73 slides in the direction of the arrow with respect to the first suction unit 302. Hereinafter, the same components as those in the first embodiment are denoted by the same reference numerals, and description thereof is omitted or simplified here.

As shown in FIG. 13, the first suction unit 302 of the third embodiment is formed to a size that covers a part of the peripheral region 78. That is, since the stage 73 is provided so as to be movable with respect to the first suction part 302, it is not necessary to provide the suction port 307 so as to cover the entire peripheral region 78. Specifically, when the first suction part 302 is closest to the pallet 72, the first suction part 302 is provided from the side parts 72 c and 72 e of the pallet 72 to a part of the peripheral region 78.

In other words, since the first suction unit 302 moves along the stage 73 surface in the peripheral region 78, the first suction unit 76 is provided to cover the entire peripheral region 78. It is possible to reduce the size of the suction unit 302 (compact). In addition, when the area of the stage 73 in the peripheral region 78 is large, more effects can be obtained.

As described above in detail, according to the third embodiment, (1) and (2) of the first embodiment described above.
In addition to the effects described above, the following effects can be obtained.

(4) According to the third embodiment, since the stage 73 moves with respect to the first suction unit 302, the first suction unit 76 is provided so as to cover the entire peripheral region 78. The area of the suction unit 302 can be reduced.

  In addition, embodiment is not limited above, It can also implement with the following forms.

(Modification 1)
As described above, the object to be rubbed is not limited to a square shape (such as a pallet 72 in which a plurality of substrates to be processed 101 are arranged). For example, as shown in FIG. A rubbing process may be performed on a circular shape such as 12). FIG.
These are the schematic diagrams which show the modification of the structure of a rubbing apparatus, (a) is a schematic top view which shows the structure of the rubbing apparatus in a 1st position, (b) is EE of the rubbing apparatus shown to (a). '
It is a schematic cross section along a cross section. In the rubbing apparatus 401 shown in FIG. 14, a circular mother substrate 102 (hereinafter referred to as “substrate to be processed 102”) is placed on a stage 73.
The first suction part 402 is formed so as to cover the peripheral area 78 on the stage 73 from the area along the arc-shaped side part 102 a of the substrate to be processed 102.

According to this, even when the shape of the substrate to be processed 102 is circular, the first suction part 402 is formed along the shape of the arc-shaped side portion 102a of the substrate to be processed 102, so Dust 200 deposited on a portion close to the substrate 102 can be sucked. In the case where the circular target substrate 102 is rubbed in the second embodiment and the third embodiment,
The shape of the first suction parts 203, 302 on the substrate 101 side is formed along the arc-shaped side part.

(Modification 2)
As described above, the first suction units 76, 203, 302, 402 and the control unit 92
The present invention is not limited to sucking the dust 200 accumulated in the peripheral region 78 on the stages 73 and 202 for a predetermined time. For example, the amount of the dust 200 deposited using an optical sensor and the control unit 92 is detected, and the dust 200 is detected. The suction time and the suction pressure may be controlled in accordance with the amount. For example, when the amount of accumulated dust 200 is large, the suction time is set to a predetermined time or more.

(Modification 3)
As described above, instead of rotating the rubbing roll 75 in a predetermined direction and scooping up the dust in the predetermined direction to deposit the dust 200 in the peripheral region 78 on the stages 73 and 202, for example, An air blowing mechanism for creating an airflow may be provided in the vicinity of the rubbing roll 75 so that air is blown from the upstream side to the downstream side in the rubbing direction so that the dust 200 gathers in the direction of the peripheral region 78. According to this, the dust 200 that cannot be removed only by the first suction portions 76, 203, 302, and 402 can be more easily removed.

(Modification 4)
As described above, the plurality of rubbing processes are not limited to being performed using the same moving path from only one side, and may be performed using a reciprocating moving path (reciprocating rubbing), for example. . Even in this case, the dust 200 can be collected in the peripheral region 78 because the direction of scraping by the rubbing roll 75 is constant.

(Modification 5)
As described above, the step of the suction port 207 of the first suction unit 203 has four blocks 207a.
It is not limited to being comprised from -207d, For example, what is necessary is just to make it comprise according to the level | step difference of the stage 202, for example.

(Modification 6)
The shape is not limited to the planar shape of the first suction portions 76, 203, 302, and 402 described above, and may be a shape that matches the dust region to be accumulated, for example.

(Modification 7)
The first suction unit 203 of the second embodiment described above has a shape that covers from the region along the side 72d of the pallet 72 to one end of the third stage 206, but is not limited to this shape.
For example, as in the first embodiment, a part of the side portions 72c and 72e of the pallet 72 may be covered.

DESCRIPTION OF SYMBOLS 11 ... Liquid crystal device, 12 ... Element substrate, 13 ... Opposite substrate, 14 ... Sealing material, 15 ... Liquid crystal layer,
DESCRIPTION OF SYMBOLS 16 ... Liquid crystal injection port, 17 ... Sealing material, 18 ... Frame light shielding film, 19 ... Display area, 21 ... Pixel area, 22 ... Signal line drive circuit, 23 ... External connection terminal, 24 ... Scanning line drive circuit, 25 ... Inspection circuit 26 ... vertical conduction terminal 27 ... pixel electrode 28 ... first alignment film 31 ... common electrode 32 ... second alignment film 33 ... TFT element 34 ... signal line 35 ... scanning line 36 ... Capacitance electrode 37 ... Storage capacitor 41 ... Semiconductor layer 41a ... Channel region 41b ... Low concentration source region 41c ...
Low concentration drain region, 41d ... High concentration source region, 41e ... High concentration drain region, 51 ...
Lower light-shielding film, 52... Base insulating film, 53... Gate insulating film, 54... First interlayer insulating film, 55 .. relay layer, 56 ... dielectric film, 57 ... shield layer, 58, 61, 62, 65, 66 ... Contact hole, 63 ... Second interlayer insulating film, 64 ... Third interlayer insulating film, 67 ... Second relay layer, 71, 20
1, 301, 401 ... rubbing device, 72 ... pallet, 72a ... recess, 72b ... suction port,
72c, 72d, 72e, 102a ... side, 73,202 ... stage, 73a ... one end, 7
4 ... substrate transfer machine, 74a ... arm, 75 ... rubbing roll, 75a ... rubbing cloth, 76,
203, 302, 402 ... first suction part, 76a ... suction port, 77 ... second suction part, 78 ... peripheral area as the periphery of the substrate placement area, 81 ... first position, 82 ... second position, 83
3rd position, 84 ... 4th position, 85 ... exhaust port, 91 ... moving mechanism, 92 ... control unit, 93 ... moving mechanism as first moving mechanism, 94 ... rotating mechanism, 101, 102 ... mother board, covered Process substrate, 200 ... dust, 202a ... 204, first stage, 205 ... second
Stage 206 206 Third stage 206 a Guide hole 207 307 Suction port 20
7a ... 1st block, 207b ... 2nd block, 207c ... 3rd block, 207d ... 4th block, 208 ... Opening hole.

Claims (16)

An apparatus for manufacturing a liquid crystal device, comprising: a liquid crystal layer sandwiched between a pair of substrates; and an alignment film provided on one of the pair of substrates and subjected to alignment treatment,
A stage having a substrate placement area for placing at least one of the one substrate;
A rubbing roll for rubbing the alignment film provided on the one substrate on the stage;
An apparatus for manufacturing a liquid crystal device, comprising: a first suction part having a suction port arranged along at least one side of the substrate placement region around the substrate placement region. An apparatus for manufacturing a liquid crystal device according to claim 1,
The periphery of the substrate placement area has at least one step surface,
The apparatus for manufacturing a liquid crystal device, wherein the suction port has a shape corresponding to a step of the step surface. An apparatus for manufacturing a liquid crystal device according to claim 2,
The apparatus for manufacturing a liquid crystal device, wherein the suction port is divided corresponding to the step surface having a height different from the surface of the stage in a normal direction. An apparatus for manufacturing a liquid crystal device according to claim 2 or 3,
The apparatus for manufacturing a liquid crystal device, wherein the suction port includes a closed portion that is parallel and closed to the step surface, and an open portion that is open. A liquid crystal device manufacturing apparatus according to any one of claims 1 to 4,
An apparatus for manufacturing a liquid crystal device, comprising: a first movement mechanism that moves the first suction unit between a standby position in a predetermined direction of the stage and a position spaced from the standby position. An apparatus for manufacturing a liquid crystal device according to claim 5,
With a control unit,
The control unit drives and controls the first moving mechanism so that the periphery of the substrate placement area and the suction port face the stage with a predetermined gap therebetween. An apparatus for manufacturing a liquid crystal device, wherein the apparatus is moved. An apparatus for manufacturing a liquid crystal device according to claim 6,
The liquid crystal device manufacturing apparatus, wherein the control unit controls a suction time of the first suction unit. An apparatus for manufacturing a liquid crystal device according to claim 6 or 7,
An optical sensor for sensing the amount of dust deposited around the substrate placement area;
The liquid crystal device manufacturing apparatus according to claim 1, wherein the control unit controls the suction time so as to be a predetermined time or longer based on an output from the optical sensor. An apparatus for manufacturing a liquid crystal device according to any one of claims 1 to 8,
The substrate is rectangular;
The liquid crystal device manufacturing apparatus, wherein the first suction part has a shape along at least one side of the substrate. An apparatus for manufacturing a liquid crystal device according to any one of claims 1 to 8,
The substrate is circular;
The liquid crystal device manufacturing apparatus, wherein the first suction part has a shape along at least one side of the substrate. An apparatus for manufacturing a liquid crystal device according to any one of claims 1 to 10,
The apparatus for manufacturing a liquid crystal device, wherein the first suction part is disposed on the downstream side in the rubbing direction. An apparatus for manufacturing a liquid crystal device according to any one of claims 6 to 11,
The liquid crystal device manufacturing apparatus, wherein the control unit drives and controls a first moving mechanism that moves the stage relative to the first suction unit. A liquid crystal device manufacturing apparatus according to any one of claims 1 to 12,
An apparatus for manufacturing a liquid crystal device, comprising: a second suction portion in which a suction port is disposed in the vicinity of the peripheral surface of the rubbing roll. A liquid crystal device manufacturing method comprising: a liquid crystal layer sandwiched between a pair of substrates; and an alignment film provided on one of the pair of substrates and subjected to an alignment process,
A placing step of placing at least one of the one substrates in a substrate placing region;
A rubbing treatment step of rubbing the alignment film of the one substrate in a predetermined direction to perform an alignment treatment,
The method of manufacturing a liquid crystal device, wherein the rubbing treatment step includes a suction step of sucking dust adhering to the periphery of the substrate placement area along at least one side of the substrate placement area. 15. A method of manufacturing a liquid crystal device according to claim 14,
The method of manufacturing a liquid crystal device, wherein the suction step is performed at least for each rubbing process. A method for manufacturing a liquid crystal device according to claim 14 or 15,
The method of manufacturing a liquid crystal device, wherein the suction step performs suction while sending air from the substrate side toward the periphery of the substrate placement region.

Images