JP2010532082A5 - - Google Patents

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Publication number
JP2010532082A5
JP2010532082A5 JP2010514936A JP2010514936A JP2010532082A5 JP 2010532082 A5 JP2010532082 A5 JP 2010532082A5 JP 2010514936 A JP2010514936 A JP 2010514936A JP 2010514936 A JP2010514936 A JP 2010514936A JP 2010532082 A5 JP2010532082 A5 JP 2010532082A5
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JP
Japan
Prior art keywords
work surface
cathode
ion source
grooves
ion
Prior art date
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Application number
JP2010514936A
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English (en)
Japanese (ja)
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JP5481375B2 (ja
JP2010532082A (ja
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Priority claimed from US11/768,242 external-priority patent/US7723699B2/en
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Publication of JP2010532082A publication Critical patent/JP2010532082A/ja
Publication of JP2010532082A5 publication Critical patent/JP2010532082A5/ja
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Publication of JP5481375B2 publication Critical patent/JP5481375B2/ja
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JP2010514936A 2007-06-26 2008-06-09 電子生成及び集束用溝を有する陰極、イオン源及び関連方法 Active JP5481375B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US11/768,242 US7723699B2 (en) 2007-06-26 2007-06-26 Cathode having electron production and focusing grooves, ion source and related method
US11/768,242 2007-06-26
PCT/US2008/066312 WO2009002692A2 (en) 2007-06-26 2008-06-09 Cathode having electron production and focusing grooves, ion source and related method

Publications (3)

Publication Number Publication Date
JP2010532082A JP2010532082A (ja) 2010-09-30
JP2010532082A5 true JP2010532082A5 (enExample) 2011-07-07
JP5481375B2 JP5481375B2 (ja) 2014-04-23

Family

ID=40159236

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2010514936A Active JP5481375B2 (ja) 2007-06-26 2008-06-09 電子生成及び集束用溝を有する陰極、イオン源及び関連方法

Country Status (6)

Country Link
US (2) US7723699B2 (enExample)
JP (1) JP5481375B2 (enExample)
KR (1) KR101460053B1 (enExample)
CN (1) CN101689488B (enExample)
TW (1) TWI441228B (enExample)
WO (1) WO2009002692A2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7723699B2 (en) * 2007-06-26 2010-05-25 Varian Semiconductor Equipment Associates, Inc. Cathode having electron production and focusing grooves, ion source and related method
JP5363413B2 (ja) * 2010-05-10 2013-12-11 電気化学工業株式会社 電子源
JP6100619B2 (ja) * 2013-06-04 2017-03-22 株式会社日立ハイテクノロジーズ イオン源およびイオンミリング装置
US9818570B2 (en) * 2015-10-23 2017-11-14 Varian Semiconductor Equipment Associates, Inc. Ion source for multiple charged species
CN106449386A (zh) * 2016-09-26 2017-02-22 中国电子科技集团公司第四十八研究所 一种用于SiC晶片掺杂的离子注入方法及装置
US11462386B2 (en) * 2018-12-17 2022-10-04 Applied Materials, Inc. Electron beam apparatus for optical device fabrication
WO2025243543A1 (ja) * 2024-05-24 2025-11-27 国立大学法人豊橋技術科学大学 真空アーク放電発生装置における陰極および真空アーク放電発生装置

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3594885A (en) * 1969-06-16 1971-07-27 Varian Associates Method for fabricating a dimpled concave dispenser cathode incorporating a grid
US5583393A (en) * 1994-03-24 1996-12-10 Fed Corporation Selectively shaped field emission electron beam source, and phosphor array for use therewith
JP2787899B2 (ja) * 1995-03-20 1998-08-20 日本電気株式会社 冷陰極およびこれを用いた電子銃とマイクロ波管
JPH0963981A (ja) * 1995-08-29 1997-03-07 Hitachi Ltd イオン発生装置およびそれを用いたイオン注入装置
US5703375A (en) 1996-08-02 1997-12-30 Eaton Corporation Method and apparatus for ion beam neutralization
US5703372A (en) 1996-10-30 1997-12-30 Eaton Corporation Endcap for indirectly heated cathode of ion source
JP3970497B2 (ja) 2000-03-30 2007-09-05 株式会社神戸製鋼所 イオン源を用いたイオンビーム発生方法，イオン源
WO2002007180A1 (en) * 2000-07-19 2002-01-24 Matsushita Electric Industrial Co., Ltd. Electron emission element and production method therefor, and image display unit using this
US6576909B2 (en) * 2001-02-28 2003-06-10 International Business Machines Corp. Ion generation chamber
US6936145B2 (en) * 2002-02-28 2005-08-30 Ionedge Corporation Coating method and apparatus
JP4483395B2 (ja) * 2004-04-23 2010-06-16 パナソニック電工株式会社 イオン発生装置
US7723699B2 (en) * 2007-06-26 2010-05-25 Varian Semiconductor Equipment Associates, Inc. Cathode having electron production and focusing grooves, ion source and related method

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