JP2010531493A - マルチチャンネル非揮発性固体記憶装置に基づくロジック・ストリップの適応制御方法 - Google Patents

マルチチャンネル非揮発性固体記憶装置に基づくロジック・ストリップの適応制御方法 Download PDF

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JP2010531493A
JP2010531493A JP2010513626A JP2010513626A JP2010531493A JP 2010531493 A JP2010531493 A JP 2010531493A JP 2010513626 A JP2010513626 A JP 2010513626A JP 2010513626 A JP2010513626 A JP 2010513626A JP 2010531493 A JP2010531493 A JP 2010531493A
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logic
logic strip
channel
strip
storage device
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ヘー ホアン
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メモライト メモリテック (シェンチェン) カンパニー リミテッド
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/10Programming or data input circuits
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02Addressing or allocation; Relocation
    • G06F12/0223User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023Free address space management
    • G06F12/0238Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7202Allocation control and policies
    • GPHYSICS
    • G06COMPUTING OR CALCULATING; COUNTING
    • G06FELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72Details relating to flash memory management
    • G06F2212/7208Multiple device management, e.g. distributing data over multiple flash devices

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  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
JP2010513626A 2007-06-28 2008-06-04 マルチチャンネル非揮発性固体記憶装置に基づくロジック・ストリップの適応制御方法 Pending JP2010531493A (ja)

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CNB2007100762467A CN100530138C (zh) 2007-06-28 2007-06-28 基于多通道闪存设备逻辑条带的自适应控制方法
PCT/CN2008/071178 WO2009000184A1 (en) 2007-06-28 2008-06-04 Self-adaptive control method for logical strips based on multi-channel solid-state non-volatile storage device

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JP2010531493A true JP2010531493A (ja) 2010-09-24

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US (1) US8244966B2 (enExample)
JP (1) JP2010531493A (enExample)
CN (1) CN100530138C (enExample)
TW (1) TW200917268A (enExample)
WO (1) WO2009000184A1 (enExample)

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JP2013210846A (ja) * 2012-03-30 2013-10-10 Fujitsu Ltd ストレージ制御装置、ストレージシステムおよびストレージ制御方法

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CN100547566C (zh) 2007-06-28 2009-10-07 忆正存储技术(深圳)有限公司 基于多通道闪存设备逻辑条带的控制方法
WO2009133428A1 (en) * 2008-04-29 2009-11-05 Freescale Semiconductor, Inc. Multiplexing and demultiplexing data
TWI425357B (zh) * 2010-09-27 2014-02-01 Silicon Motion Inc 用來進行區塊管理之方法以及記憶裝置及控制器
CN101957729B (zh) * 2010-09-27 2014-07-02 中兴通讯股份有限公司 逻辑块变换方法及基于该方法兼容用户读写的方法和装置
CN102841852B (zh) 2011-06-24 2015-06-17 华为技术有限公司 磨损均衡方法、存储装置及信息系统
US9703527B2 (en) 2012-12-31 2017-07-11 Sandisk Technologies Llc Storage device and method for reallocating storage device resources based on an estimated fill level of a host buffer
US20150169445A1 (en) * 2013-12-12 2015-06-18 International Business Machines Corporation Virtual grouping of memory
US10254967B2 (en) 2016-01-13 2019-04-09 Sandisk Technologies Llc Data path control for non-volatile memory
US10528267B2 (en) 2016-11-11 2020-01-07 Sandisk Technologies Llc Command queue for storage operations
US10528286B2 (en) 2016-11-11 2020-01-07 Sandisk Technologies Llc Interface for non-volatile memory
US10528255B2 (en) 2016-11-11 2020-01-07 Sandisk Technologies Llc Interface for non-volatile memory
US10114589B2 (en) * 2016-11-16 2018-10-30 Sandisk Technologies Llc Command control for multi-core non-volatile memory
CN106873903B (zh) * 2016-12-30 2020-02-18 深圳忆联信息系统有限公司 数据存储方法及装置
CN107391029B (zh) * 2017-06-15 2020-03-17 武汉斗鱼网络科技有限公司 一种文件存储、读取方法及其对应的系统
CN109308273B (zh) * 2017-07-26 2020-11-20 北京兆易创新科技股份有限公司 闪存控制器、闪存控制器功能的调节方法及设备
CN109308161B (zh) * 2017-07-26 2022-04-01 北京兆易创新科技股份有限公司 用于闪存的参数调整装置、方法及设备
CN108710578B (zh) * 2018-04-20 2022-07-26 深圳市战音科技有限公司 基于闪存的数据存储方法和装置
CN109358811B (zh) * 2018-09-30 2021-10-01 深圳市得一微电子有限责任公司 存储设备管理方法、装置及可读存储介质
KR102795964B1 (ko) 2018-11-08 2025-04-16 삼성전자주식회사 저장 장치, 저장 장치의 동작 방법 및 저장 장치를 제어하는 호스트의 동작 방법
CN109726145B (zh) * 2018-12-29 2021-02-26 杭州宏杉科技股份有限公司 一种数据存储空间的分配方法、装置及电子设备
CN110096228B (zh) * 2019-03-29 2021-09-14 联想(北京)有限公司 数据存储方法、数据存储装置和数据存储系统
CN112130762B (zh) * 2020-09-07 2024-01-26 上海威固信息技术股份有限公司 一种固态硬盘数据存储与操作方法
CN112817533A (zh) * 2021-01-29 2021-05-18 深圳忆联信息系统有限公司 Ssd管理方法、装置计算机设备及存储介质
KR20230001438A (ko) * 2021-06-28 2023-01-04 에스케이하이닉스 주식회사 저장 장치 및 그 동작 방법
KR20240131792A (ko) 2023-02-24 2024-09-02 삼성전자주식회사 Raid 컨트롤러, raid 컨트롤러의 동작 방법 및 스토리지 장치

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CN100547566C (zh) * 2007-06-28 2009-10-07 忆正存储技术(深圳)有限公司 基于多通道闪存设备逻辑条带的控制方法
CN100530138C (zh) * 2007-06-28 2009-08-19 忆正存储技术(深圳)有限公司 基于多通道闪存设备逻辑条带的自适应控制方法

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WO2005066794A2 (en) * 2003-12-30 2005-07-21 Sandisk Corporation Adaptive mode switching of flash memory address mapping based on host usage characteristics

Cited By (4)

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KR20110109321A (ko) * 2010-03-31 2011-10-06 삼성전자주식회사 적층 메모리와 이를 포함하는 장치들
KR101699283B1 (ko) 2010-03-31 2017-01-25 삼성전자주식회사 적층 메모리와 이를 포함하는 장치들
JP2013210846A (ja) * 2012-03-30 2013-10-10 Fujitsu Ltd ストレージ制御装置、ストレージシステムおよびストレージ制御方法
US9507703B2 (en) 2012-03-30 2016-11-29 Fujitsu Limited Storage control apparatus, storage system, and storage control method to adjust RAID system strip size

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TW200917268A (en) 2009-04-16
US20100100669A1 (en) 2010-04-22
CN100530138C (zh) 2009-08-19
CN101101569A (zh) 2008-01-09
US8244966B2 (en) 2012-08-14
WO2009000184A1 (en) 2008-12-31
TWI344154B (enExample) 2011-06-21

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