TWI344154B - - Google Patents

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Publication number
TWI344154B
TWI344154B TW096136724A TW96136724A TWI344154B TW I344154 B TWI344154 B TW I344154B TW 096136724 A TW096136724 A TW 096136724A TW 96136724 A TW96136724 A TW 96136724A TW I344154 B TWI344154 B TW I344154B
Authority
TW
Taiwan
Prior art keywords
logical
flash memory
memory device
strip
size
Prior art date
Application number
TW096136724A
Other languages
English (en)
Chinese (zh)
Other versions
TW200917268A (en
Original Assignee
Memoright Memoritech Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memoright Memoritech Corp filed Critical Memoright Memoritech Corp
Priority to TW096136724A priority Critical patent/TW200917268A/zh
Publication of TW200917268A publication Critical patent/TW200917268A/zh
Application granted granted Critical
Publication of TWI344154B publication Critical patent/TWI344154B/zh

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F12/00—Accessing, addressing or allocating within memory systems or architectures
    • G06F12/02—Addressing or allocation; Relocation
    • G06F12/0223—User address space allocation, e.g. contiguous or non contiguous base addressing
    • G06F12/023—Free address space management
    • G06F12/0238—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory
    • G06F12/0246—Memory management in non-volatile memory, e.g. resistive RAM or ferroelectric memory in block erasable memory, e.g. flash memory
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7202—Allocation control and policies
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
    • G06F2212/72—Details relating to flash memory management
    • G06F2212/7208—Multiple device management, e.g. distributing data over multiple flash devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
TW096136724A 2007-06-28 2007-10-01 Self-adaptive control method for logical strips based on multi-channel solid-state non-volatile storage device TW200917268A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW096136724A TW200917268A (en) 2007-06-28 2007-10-01 Self-adaptive control method for logical strips based on multi-channel solid-state non-volatile storage device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CNB2007100762467A CN100530138C (zh) 2007-06-28 2007-06-28 基于多通道闪存设备逻辑条带的自适应控制方法
TW096136724A TW200917268A (en) 2007-06-28 2007-10-01 Self-adaptive control method for logical strips based on multi-channel solid-state non-volatile storage device

Publications (2)

Publication Number Publication Date
TW200917268A TW200917268A (en) 2009-04-16
TWI344154B true TWI344154B (enExample) 2011-06-21

Family

ID=39035849

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096136724A TW200917268A (en) 2007-06-28 2007-10-01 Self-adaptive control method for logical strips based on multi-channel solid-state non-volatile storage device

Country Status (5)

Country Link
US (1) US8244966B2 (enExample)
JP (1) JP2010531493A (enExample)
CN (1) CN100530138C (enExample)
TW (1) TW200917268A (enExample)
WO (1) WO2009000184A1 (enExample)

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CN100547566C (zh) 2007-06-28 2009-10-07 忆正存储技术(深圳)有限公司 基于多通道闪存设备逻辑条带的控制方法
WO2009133428A1 (en) * 2008-04-29 2009-11-05 Freescale Semiconductor, Inc. Multiplexing and demultiplexing data
KR101699283B1 (ko) * 2010-03-31 2017-01-25 삼성전자주식회사 적층 메모리와 이를 포함하는 장치들
TWI425357B (zh) * 2010-09-27 2014-02-01 Silicon Motion Inc 用來進行區塊管理之方法以及記憶裝置及控制器
CN101957729B (zh) * 2010-09-27 2014-07-02 中兴通讯股份有限公司 逻辑块变换方法及基于该方法兼容用户读写的方法和装置
CN102841852B (zh) 2011-06-24 2015-06-17 华为技术有限公司 磨损均衡方法、存储装置及信息系统
JP5884602B2 (ja) 2012-03-30 2016-03-15 富士通株式会社 ストレージ制御装置、およびストレージシステム
US9703527B2 (en) 2012-12-31 2017-07-11 Sandisk Technologies Llc Storage device and method for reallocating storage device resources based on an estimated fill level of a host buffer
US20150169445A1 (en) * 2013-12-12 2015-06-18 International Business Machines Corporation Virtual grouping of memory
US10254967B2 (en) 2016-01-13 2019-04-09 Sandisk Technologies Llc Data path control for non-volatile memory
US10528267B2 (en) 2016-11-11 2020-01-07 Sandisk Technologies Llc Command queue for storage operations
US10528286B2 (en) 2016-11-11 2020-01-07 Sandisk Technologies Llc Interface for non-volatile memory
US10528255B2 (en) 2016-11-11 2020-01-07 Sandisk Technologies Llc Interface for non-volatile memory
US10114589B2 (en) * 2016-11-16 2018-10-30 Sandisk Technologies Llc Command control for multi-core non-volatile memory
CN106873903B (zh) * 2016-12-30 2020-02-18 深圳忆联信息系统有限公司 数据存储方法及装置
CN107391029B (zh) * 2017-06-15 2020-03-17 武汉斗鱼网络科技有限公司 一种文件存储、读取方法及其对应的系统
CN109308273B (zh) * 2017-07-26 2020-11-20 北京兆易创新科技股份有限公司 闪存控制器、闪存控制器功能的调节方法及设备
CN109308161B (zh) * 2017-07-26 2022-04-01 北京兆易创新科技股份有限公司 用于闪存的参数调整装置、方法及设备
CN108710578B (zh) * 2018-04-20 2022-07-26 深圳市战音科技有限公司 基于闪存的数据存储方法和装置
CN109358811B (zh) * 2018-09-30 2021-10-01 深圳市得一微电子有限责任公司 存储设备管理方法、装置及可读存储介质
KR102795964B1 (ko) 2018-11-08 2025-04-16 삼성전자주식회사 저장 장치, 저장 장치의 동작 방법 및 저장 장치를 제어하는 호스트의 동작 방법
CN109726145B (zh) * 2018-12-29 2021-02-26 杭州宏杉科技股份有限公司 一种数据存储空间的分配方法、装置及电子设备
CN110096228B (zh) * 2019-03-29 2021-09-14 联想(北京)有限公司 数据存储方法、数据存储装置和数据存储系统
CN112130762B (zh) * 2020-09-07 2024-01-26 上海威固信息技术股份有限公司 一种固态硬盘数据存储与操作方法
CN112817533A (zh) * 2021-01-29 2021-05-18 深圳忆联信息系统有限公司 Ssd管理方法、装置计算机设备及存储介质
KR20230001438A (ko) * 2021-06-28 2023-01-04 에스케이하이닉스 주식회사 저장 장치 및 그 동작 방법
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CN100397380C (zh) * 2005-12-27 2008-06-25 北京中星微电子有限公司 多通道闪存传输控制器、芯片及存储设备
CN100547566C (zh) * 2007-06-28 2009-10-07 忆正存储技术(深圳)有限公司 基于多通道闪存设备逻辑条带的控制方法
CN100530138C (zh) * 2007-06-28 2009-08-19 忆正存储技术(深圳)有限公司 基于多通道闪存设备逻辑条带的自适应控制方法

Also Published As

Publication number Publication date
TW200917268A (en) 2009-04-16
JP2010531493A (ja) 2010-09-24
US20100100669A1 (en) 2010-04-22
CN100530138C (zh) 2009-08-19
CN101101569A (zh) 2008-01-09
US8244966B2 (en) 2012-08-14
WO2009000184A1 (en) 2008-12-31

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