JP2010529597A - 制御可能なスペクトルを有する照明装置 - Google Patents
制御可能なスペクトルを有する照明装置 Download PDFInfo
- Publication number
- JP2010529597A JP2010529597A JP2010510294A JP2010510294A JP2010529597A JP 2010529597 A JP2010529597 A JP 2010529597A JP 2010510294 A JP2010510294 A JP 2010510294A JP 2010510294 A JP2010510294 A JP 2010510294A JP 2010529597 A JP2010529597 A JP 2010529597A
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- JP
- Japan
- Prior art keywords
- spectral distribution
- light
- light emitting
- quantum dot
- shell quantum
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
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- 239000002096 quantum dot Substances 0.000 claims abstract description 106
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- 239000013078 crystal Substances 0.000 description 9
- 238000000691 measurement method Methods 0.000 description 8
- 239000002019 doping agent Substances 0.000 description 7
- SBIBMFFZSBJNJF-UHFFFAOYSA-N selenium;zinc Chemical compound [Se]=[Zn] SBIBMFFZSBJNJF-UHFFFAOYSA-N 0.000 description 7
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 6
- 239000002159 nanocrystal Substances 0.000 description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 6
- 229910052721 tungsten Inorganic materials 0.000 description 6
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- 238000000137 annealing Methods 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical group CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- FJLUATLTXUNBOT-UHFFFAOYSA-N 1-Hexadecylamine Chemical compound CCCCCCCCCCCCCCCCN FJLUATLTXUNBOT-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910007709 ZnTe Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
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- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 240000007320 Pinus strobus Species 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
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- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000007641 inkjet printing Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
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- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
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- 238000001308 synthesis method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/02—Use of particular materials as binders, particle coatings or suspension media therefor
- C09K11/025—Use of particular materials as binders, particle coatings or suspension media therefor non-luminescent particle coatings or suspension media
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/88—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing selenium, tellurium or unspecified chalcogen elements
- C09K11/881—Chalcogenides
- C09K11/883—Chalcogenides with zinc or cadmium
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
- H10H20/818—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous within the light-emitting regions
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Led Device Packages (AREA)
- Non-Portable Lighting Devices Or Systems Thereof (AREA)
- Led Devices (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US11/755,055 US8785906B2 (en) | 2007-05-30 | 2007-05-30 | Lamp with controllable spectrum |
| PCT/US2008/006525 WO2008150380A1 (en) | 2007-05-30 | 2008-05-22 | Lamp with controllable spectrum |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010529597A true JP2010529597A (ja) | 2010-08-26 |
| JP2010529597A5 JP2010529597A5 (enExample) | 2011-05-06 |
Family
ID=39683866
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2010510294A Pending JP2010529597A (ja) | 2007-05-30 | 2008-05-22 | 制御可能なスペクトルを有する照明装置 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US8785906B2 (enExample) |
| EP (1) | EP2150993A1 (enExample) |
| JP (1) | JP2010529597A (enExample) |
| CN (1) | CN101681966B (enExample) |
| TW (1) | TW200908390A (enExample) |
| WO (1) | WO2008150380A1 (enExample) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012204609A (ja) * | 2011-03-25 | 2012-10-22 | Sumitomo Metal Mining Co Ltd | 量子ドット太陽光led用積層体 |
| JP2012212862A (ja) * | 2011-03-24 | 2012-11-01 | Sumitomo Metal Mining Co Ltd | 白色led用積層体、及び白色led |
| KR101372068B1 (ko) * | 2013-02-25 | 2014-03-07 | 한국광기술원 | 목표 스펙트럼에 대한 발광 다이오드를 이용하는 조명장치의 성능 테스트 방법 |
| WO2015107790A1 (ja) * | 2014-01-16 | 2015-07-23 | コニカミノルタ株式会社 | 電界発光素子 |
| JP2018520533A (ja) * | 2015-04-21 | 2018-07-26 | プロダクション エレクトラテック インク | ハイブリッドナノ複合材料、レーザ走査システム、及び体積画像投影におけるそれらの使用 |
| WO2021064822A1 (ja) * | 2019-09-30 | 2021-04-08 | シャープ株式会社 | 発光素子、発光デバイス |
| WO2021117189A1 (ja) * | 2019-12-12 | 2021-06-17 | シャープ株式会社 | 表示装置 |
| WO2022091277A1 (ja) * | 2020-10-29 | 2022-05-05 | シャープ株式会社 | 発光素子および発光装置 |
| WO2024042572A1 (ja) * | 2022-08-22 | 2024-02-29 | シャープディスプレイテクノロジー株式会社 | 発光素子および発光デバイス |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE10260149A1 (de) * | 2002-12-20 | 2004-07-01 | BSH Bosch und Siemens Hausgeräte GmbH | Vorrichtung zur Bestimmung des Leitwertes von Wäsche, Wäschetrockner und Verfahren zur Verhinderung von Schichtbildung auf Elektroden |
| US8104908B2 (en) * | 2010-03-04 | 2012-01-31 | Xicato, Inc. | Efficient LED-based illumination module with high color rendering index |
| WO2011147521A1 (en) | 2010-05-27 | 2011-12-01 | Merck Patent Gmbh | Down conversion |
| US9685585B2 (en) * | 2012-06-25 | 2017-06-20 | Cree, Inc. | Quantum dot narrow-band downconverters for high efficiency LEDs |
| ES2478693B1 (es) * | 2012-12-21 | 2015-04-29 | Universidad Complutense De Madrid | Elemento bloqueante de longitudes de onda corta en fuentes de iluminación de tipo led |
| CN104968256B (zh) * | 2013-01-29 | 2017-10-27 | 飞利浦照明控股有限公司 | 光源、灯具和手术照明单元 |
| JP2016051845A (ja) * | 2014-09-01 | 2016-04-11 | 株式会社ジャパンディスプレイ | 表示装置 |
| WO2016072807A1 (ko) * | 2014-11-06 | 2016-05-12 | 포항공과대학교 산학협력단 | 유기 리간드가 치환된 페로브스카이트 나노결정입자 발광체 제조방법, 이에 의해 제조된 나노결정입자 발광체 및 이를 이용한 발광소자 |
| US10626326B2 (en) * | 2014-11-06 | 2020-04-21 | Postech Academy-Industry Foundation | Method for manufacturing perovskite nanocrystal particle light emitting body where organic ligand is substituted, nanocrystal particle light emitting body manufactured thereby, and light emitting device using same |
| WO2017033137A1 (en) * | 2015-08-27 | 2017-03-02 | Sabic Global Technologies B.V. | Apparatus having electroluminescent quantum dots |
| KR102437579B1 (ko) | 2015-10-23 | 2022-08-26 | 삼성전자주식회사 | 광원, 백라이트유닛 및 표시 장치 |
| WO2017205449A1 (en) * | 2016-05-25 | 2017-11-30 | Kent State University | Brightness enhancement film or cell with quantum-confined semiconductor nanoparticles in polymer dispersed liquid crystal |
| DE102016120256A1 (de) * | 2016-10-24 | 2018-04-26 | Ledvance Gmbh | Beleuchtungsvorrichtung mit variabler lichtverteilung |
| CN114450813B (zh) * | 2019-09-19 | 2024-11-01 | 夏普株式会社 | 发光元件和显示器件 |
| CN113497192B (zh) * | 2020-04-08 | 2024-08-23 | 陈学仕 | 白光量子点二极管元件、背光模块及照明装置 |
| TWI751521B (zh) * | 2020-04-08 | 2022-01-01 | 國立清華大學 | 白光量子點二極體元件、背光模組及照明裝置 |
| US20230255039A1 (en) * | 2020-07-29 | 2023-08-10 | Sharp Kabushiki Kaisha | Light-emitting device |
| US20230413589A1 (en) * | 2020-10-14 | 2023-12-21 | Sharp Kabushiki Kaisha | Light-emitting element |
| US20240421225A1 (en) * | 2023-06-15 | 2024-12-19 | Murata Manufacturing Co., Ltd. | High-Performance LDMOS Structures |
| CN120166615A (zh) * | 2025-02-24 | 2025-06-17 | 江西鸿浩基业通信技术有限公司 | 远程故障侦测的路灯控制系统 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004128444A (ja) * | 2002-07-31 | 2004-04-22 | Shin Etsu Handotai Co Ltd | 発光素子及びそれを用いた照明装置 |
| WO2005071764A1 (ja) * | 2004-01-23 | 2005-08-04 | Hoya Corporation | 量子ドット分散発光素子およびその製造方法 |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5851063A (en) * | 1996-10-28 | 1998-12-22 | General Electric Company | Light-emitting diode white light source |
| US6607829B1 (en) * | 1997-11-13 | 2003-08-19 | Massachusetts Institute Of Technology | Tellurium-containing nanocrystalline materials |
| PL373724A1 (en) * | 2001-08-23 | 2005-09-05 | Yukiyasu Okumura | Color temperature-regulable led light |
| US7332211B1 (en) * | 2002-11-07 | 2008-02-19 | Massachusetts Institute Of Technology | Layered materials including nanoparticles |
| TWI233697B (en) * | 2003-08-28 | 2005-06-01 | Genesis Photonics Inc | AlInGaN light-emitting diode with wide spectrum and solid-state white light device |
| JP2007534146A (ja) * | 2003-09-05 | 2007-11-22 | ザ・ユニバーシティ・オブ・ノース・カロライナ・アット・シャーロット | ナノスケールでエピタキシャル横方向成長させた量子ドット光電子デバイスおよびその製造方法 |
| KR20060079210A (ko) * | 2003-09-08 | 2006-07-05 | 그룹 Iv 세미콘덕터 아이엔씨. | 고체 형태 백색 발광 소자 및 이를 이용한 디스플레이 |
| TWI229465B (en) * | 2004-03-02 | 2005-03-11 | Genesis Photonics Inc | Single chip white light component |
| US7999455B2 (en) * | 2006-11-13 | 2011-08-16 | Research Triangle Institute | Luminescent device including nanofibers and light stimulable particles disposed on a surface of or at least partially within the nanofibers |
| KR20060018583A (ko) * | 2004-08-25 | 2006-03-02 | 삼성전자주식회사 | 반도체 나노결정을 함유하는 백색 발광 유·무기하이브리드 전기 발광 소자 |
| US20070001581A1 (en) * | 2005-06-29 | 2007-01-04 | Stasiak James W | Nanostructure based light emitting devices and associated methods |
-
2007
- 2007-05-30 US US11/755,055 patent/US8785906B2/en not_active Expired - Fee Related
-
2008
- 2008-05-22 JP JP2010510294A patent/JP2010529597A/ja active Pending
- 2008-05-22 CN CN2008800181052A patent/CN101681966B/zh not_active Expired - Fee Related
- 2008-05-22 WO PCT/US2008/006525 patent/WO2008150380A1/en not_active Ceased
- 2008-05-22 EP EP08754634A patent/EP2150993A1/en not_active Withdrawn
- 2008-05-29 TW TW097119944A patent/TW200908390A/zh unknown
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004128444A (ja) * | 2002-07-31 | 2004-04-22 | Shin Etsu Handotai Co Ltd | 発光素子及びそれを用いた照明装置 |
| WO2005071764A1 (ja) * | 2004-01-23 | 2005-08-04 | Hoya Corporation | 量子ドット分散発光素子およびその製造方法 |
Non-Patent Citations (1)
| Title |
|---|
| JPN7013000676; B. Damilano et al.: 'From visible to white light emission by GaN quantum dots on Si(111) substrate' APPLIED PHYSICS LETTERS Vol.75, No.7, 19990816, pp.962-964, American Institute of Physics * |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012212862A (ja) * | 2011-03-24 | 2012-11-01 | Sumitomo Metal Mining Co Ltd | 白色led用積層体、及び白色led |
| JP2012204609A (ja) * | 2011-03-25 | 2012-10-22 | Sumitomo Metal Mining Co Ltd | 量子ドット太陽光led用積層体 |
| KR101372068B1 (ko) * | 2013-02-25 | 2014-03-07 | 한국광기술원 | 목표 스펙트럼에 대한 발광 다이오드를 이용하는 조명장치의 성능 테스트 방법 |
| WO2015107790A1 (ja) * | 2014-01-16 | 2015-07-23 | コニカミノルタ株式会社 | 電界発光素子 |
| JPWO2015107790A1 (ja) * | 2014-01-16 | 2017-03-23 | コニカミノルタ株式会社 | 電界発光素子 |
| JP2018520533A (ja) * | 2015-04-21 | 2018-07-26 | プロダクション エレクトラテック インク | ハイブリッドナノ複合材料、レーザ走査システム、及び体積画像投影におけるそれらの使用 |
| WO2021064822A1 (ja) * | 2019-09-30 | 2021-04-08 | シャープ株式会社 | 発光素子、発光デバイス |
| WO2021117189A1 (ja) * | 2019-12-12 | 2021-06-17 | シャープ株式会社 | 表示装置 |
| WO2022091277A1 (ja) * | 2020-10-29 | 2022-05-05 | シャープ株式会社 | 発光素子および発光装置 |
| WO2024042572A1 (ja) * | 2022-08-22 | 2024-02-29 | シャープディスプレイテクノロジー株式会社 | 発光素子および発光デバイス |
Also Published As
| Publication number | Publication date |
|---|---|
| US20080296555A1 (en) | 2008-12-04 |
| WO2008150380A1 (en) | 2008-12-11 |
| TW200908390A (en) | 2009-02-16 |
| US8785906B2 (en) | 2014-07-22 |
| CN101681966B (zh) | 2013-02-06 |
| EP2150993A1 (en) | 2010-02-10 |
| CN101681966A (zh) | 2010-03-24 |
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