JP2010525607A - 時間と共に変化する空間温度分布の能動制御 - Google Patents
時間と共に変化する空間温度分布の能動制御 Download PDFInfo
- Publication number
- JP2010525607A JP2010525607A JP2010506282A JP2010506282A JP2010525607A JP 2010525607 A JP2010525607 A JP 2010525607A JP 2010506282 A JP2010506282 A JP 2010506282A JP 2010506282 A JP2010506282 A JP 2010506282A JP 2010525607 A JP2010525607 A JP 2010525607A
- Authority
- JP
- Japan
- Prior art keywords
- heat
- temperature control
- substrate
- sensitive
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any preceding group
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Especially adapted for treating semiconductor wafers
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
- F27D19/00—Arrangements of controlling devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (10)
- 基板(12)と、
前記基板によって支持される、熱を発生する複数の電子デバイス(14)であって、前記熱を発生する電子デバイスは、動作時に、空間的に不均一であり且つ時間的に変動する熱分布によって特徴付けられる熱を放出する、熱を発生する複数の電子デバイスと、
前記熱を発生する電子デバイスに近接して、前記基板によって支持される熱に弱い複数のデバイス(16)と、
温度を能動的に制御して、前記熱を発生するデバイスから放出される前記空間的に不均一であり且つ時間的に変動する熱を補償することを可能にするために、前記基板によって支持され、且つ前記熱を発生する電子デバイスと前記熱に弱いデバイスとに対して空間的に分散される複数の温度制御素子(18)とを備えることを特徴とする、能動温度制御を有するマイクロチップ(10、20、30、40、50)。 - 前記熱を発生する電子デバイスはCMOSデバイスであり、前記熱に弱いデバイスは、光学デバイス又は電気光学デバイスのいずれかであることを特徴とする請求項1に記載のマイクロチップ。
- 前記熱を発生する電子デバイス、前記熱に弱いデバイス、及び前記複数の温度制御素子は、前記基板上の共通の層(22)内に配置されることを特徴とする請求項1に記載のマイクロチップ。
- 前記熱を発生する電子デバイスは、前記基板の第1の側(32)に配置され、前記熱に弱いデバイスは、前記基板の反対側にある第2の側(34)に配置されることを特徴とする請求項1に記載のマイクロチップ。
- 前記温度制御素子及び前記熱に弱いデバイスは、共通の面(42)内に配置されることを特徴とする請求項1に記載のマイクロチップ。
- 前記複数の温度制御素子は、少なくとも1つの抵抗加熱器を含み、前記複数の温度制御素子は少なくとも1つの熱電冷却器を含むことを特徴とする請求項1に記載のマイクロチップ。
- 前記温度制御素子は、閉ループ温度制御システム(80)の一部として少なくとも1つの温度センサ素子を含むことを特徴とする請求項1に記載のマイクロチップ。
- 前記熱を発生する複数の電子デバイスと前記熱に弱いデバイスとの間に配置される断熱層(60)をさらに備えることを特徴とする請求項1に記載のマイクロチップ。
- 基板を配設し(102)、
前記基板によって支持される、熱を発生する複数の電子デバイスを形成し(104)、
前記基板によって支持される、熱に弱い複数のデバイスを形成し(106)、
温度を能動的に制御して、前記熱を発生する電子デバイスから放出される空間的に不均一であり且つ時間的に変動する熱を補償することを可能にするために、前記熱を発生する電子デバイス及び前記熱に弱いデバイスに対して空間的に分散される複数の温度制御素子を形成すること(108)を含むことを特徴とする能動温度制御を有するマイクロチップを形成する方法(100)。 - 前記熱を発生する電子デバイスを形成することは、前記基板上に複数のCMOSデバイスを形成することを含み、
前記熱に弱いデバイスを形成することは、
ウェーハ上に複数の光学デバイスを形成し、
前記ウェーハを前記基板に結合することを含むことを特徴とする請求項9に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/796,515 US20080268396A1 (en) | 2007-04-26 | 2007-04-26 | Active control of time-varying spatial temperature distribution |
US11/796,515 | 2007-04-26 | ||
PCT/US2008/005398 WO2008134021A1 (en) | 2007-04-26 | 2008-04-25 | Active control of time-varying spatial temperature distribution |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010525607A true JP2010525607A (ja) | 2010-07-22 |
JP5258877B2 JP5258877B2 (ja) | 2013-08-07 |
Family
ID=39887409
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010506282A Expired - Fee Related JP5258877B2 (ja) | 2007-04-26 | 2008-04-25 | 時間と共に変化する空間温度分布の能動制御 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20080268396A1 (ja) |
JP (1) | JP5258877B2 (ja) |
CN (1) | CN101675517B (ja) |
DE (1) | DE112008000994B4 (ja) |
WO (1) | WO2008134021A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103268076A (zh) * | 2013-04-02 | 2013-08-28 | 中国科学院上海微系统与信息技术研究所 | 一种通过控制温度提高集成电路可靠性的方法 |
CN104238600B (zh) * | 2014-09-28 | 2017-02-08 | 广州创维平面显示科技有限公司 | 温度控制方法和装置 |
CN106777722B (zh) * | 2016-12-25 | 2020-02-18 | 北京工业大学 | 一种利用tsv传输线网切换动态调整芯片热分布方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002124619A (ja) * | 2000-07-14 | 2002-04-26 | Infineon Technologies Ag | 温度制御機構付き半導体装置 |
JP2007220087A (ja) * | 2005-12-21 | 2007-08-30 | Siemens Ag | 集積回路および集積回路を有する半導体材料の温度調節方法 |
US20080026503A1 (en) * | 2006-07-27 | 2008-01-31 | Vivian Ryan | On-Chip Sensor Array for Temperature Management in Integrated Circuits |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4235768A1 (de) * | 1992-10-24 | 1994-05-19 | Cho Ok Kyung | Modifizierte Halbleiterlaserdiode mit integriertem Temperaturregelungsteil |
US5911897A (en) * | 1997-01-13 | 1999-06-15 | Micro Control Company | Temperature control for high power burn-in for integrated circuits |
US6281120B1 (en) * | 1998-12-18 | 2001-08-28 | National Semiconductor Corporation | Temperature control structure for integrated circuit |
US6238085B1 (en) * | 1998-12-31 | 2001-05-29 | Honeywell International Inc. | Differential thermal analysis sensor |
US6230497B1 (en) * | 1999-12-06 | 2001-05-15 | Motorola, Inc. | Semiconductor circuit temperature monitoring and controlling apparatus and method |
US6484117B1 (en) * | 2000-04-13 | 2002-11-19 | Credence Systems Corporation | Predictive temperature control system for an integrated circuit |
US20020131140A1 (en) * | 2001-03-16 | 2002-09-19 | Myers Michael H. | Apparatus for wavelength stabilzed photonic transmission |
DE10138913B4 (de) * | 2001-08-08 | 2010-08-19 | Siemens Ag | Detektormodul, Detektor für Röntgen-Computertomograph und Verfahren zur Herstellung von Schnittbildern mittels eines Röntgen-Computertomographen |
US7112885B2 (en) * | 2003-07-07 | 2006-09-26 | Board Of Regents, The University Of Texas System | System, method and apparatus for improved electrical-to-optical transmitters disposed within printed circuit boards |
US20050111774A1 (en) * | 2003-11-04 | 2005-05-26 | Motorola, Inc. | Opto-Electronic Arrangement and Method |
US7058247B2 (en) * | 2003-12-17 | 2006-06-06 | International Business Machines Corporation | Silicon carrier for optical interconnect modules |
JP2006080333A (ja) * | 2004-09-10 | 2006-03-23 | Toshiba Corp | 半導体装置 |
US7544883B2 (en) * | 2004-11-12 | 2009-06-09 | International Business Machines Corporation | Integrated thermoelectric cooling devices and methods for fabricating same |
-
2007
- 2007-04-26 US US11/796,515 patent/US20080268396A1/en not_active Abandoned
-
2008
- 2008-04-25 WO PCT/US2008/005398 patent/WO2008134021A1/en active Application Filing
- 2008-04-25 CN CN200880013624.XA patent/CN101675517B/zh not_active Expired - Fee Related
- 2008-04-25 JP JP2010506282A patent/JP5258877B2/ja not_active Expired - Fee Related
- 2008-04-25 DE DE112008000994T patent/DE112008000994B4/de not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002124619A (ja) * | 2000-07-14 | 2002-04-26 | Infineon Technologies Ag | 温度制御機構付き半導体装置 |
JP2007220087A (ja) * | 2005-12-21 | 2007-08-30 | Siemens Ag | 集積回路および集積回路を有する半導体材料の温度調節方法 |
US20080026503A1 (en) * | 2006-07-27 | 2008-01-31 | Vivian Ryan | On-Chip Sensor Array for Temperature Management in Integrated Circuits |
Also Published As
Publication number | Publication date |
---|---|
WO2008134021A1 (en) | 2008-11-06 |
DE112008000994B4 (de) | 2013-08-08 |
DE112008000994T5 (de) | 2010-03-18 |
CN101675517A (zh) | 2010-03-17 |
US20080268396A1 (en) | 2008-10-30 |
JP5258877B2 (ja) | 2013-08-07 |
CN101675517B (zh) | 2012-05-09 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7654311B2 (en) | Thermal management of systems having localized regions of elevated heat flux | |
US7290596B2 (en) | Thermal management of systems having localized regions of elevated heat flux | |
US7763973B1 (en) | Integrated heat sink for a microchip | |
Back et al. | Design, fabrication, and characterization of a compact hierarchical manifold microchannel heat sink array for two-phase cooling | |
JP7022130B2 (ja) | 温度制御デバイス | |
TWI464603B (zh) | 熱分析模型建立方法及其非暫時性電腦可讀取紀錄媒體 | |
Zhang et al. | Within-tier cooling and thermal isolation technologies for heterogeneous 3D ICs | |
Han et al. | Thermal management of hotspots using diamond heat spreader on Si microcooler for GaN devices | |
JP5258877B2 (ja) | 時間と共に変化する空間温度分布の能動制御 | |
US9406563B2 (en) | Integrated device with defined heat flow | |
WO2013159075A1 (en) | Near-field radiative thermal coupling and related devices and techniques | |
Cheng et al. | Heat dissipation assessment of through silicon via (TSV)-based 3D IC packaging for CMOS image sensing | |
Dede et al. | Concepts for embedded cooling of vertical current wide band-gap semiconductor devices | |
WO2015059226A1 (en) | Integrated circuit | |
Sahu et al. | Experimental characterization of hybrid solid-state and fluidic cooling for thermal management of localized hotspots | |
Lorenzen et al. | Micro thermal management of high-power diode laser bars | |
JP6716242B2 (ja) | 差温センサ | |
US6940720B2 (en) | Integrated circuit having a thermally shielded electric resistor trace | |
JP6555106B2 (ja) | 光モジュール | |
US9178495B2 (en) | Establishing a thermal profile across a semiconductor chip | |
Yan et al. | Integrated thin film heater and sensor with planar lightwave circuits | |
Zhang | Wide Bandgap Semiconductor Components Integration in a PCB Substrate for the Development of a High Density Power Electronics Converter | |
Zhang | Intégration dans un substrat PCB de composants à semi-conducteur grand gap pour le développement d’un convertisseur d’électronique de puissance à forte densité | |
EP1436868A1 (en) | Thermal circuitry for optoelectronic device | |
Sahu | Hybrid solid-state/fluidic cooling for thermal management of electronic components |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
RD03 | Notification of appointment of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7423 Effective date: 20120202 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20120203 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120508 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120803 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130402 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130423 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160502 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R360 | Written notification for declining of transfer of rights |
Free format text: JAPANESE INTERMEDIATE CODE: R360 |
|
R371 | Transfer withdrawn |
Free format text: JAPANESE INTERMEDIATE CODE: R371 |
|
S111 | Request for change of ownership or part of ownership |
Free format text: JAPANESE INTERMEDIATE CODE: R313113 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
LAPS | Cancellation because of no payment of annual fees |