JP2010519680A - 真空筐体内においてコールドプラズマを生成する装置及び熱化学処理に対する該装置の使用 - Google Patents
真空筐体内においてコールドプラズマを生成する装置及び熱化学処理に対する該装置の使用 Download PDFInfo
- Publication number
- JP2010519680A JP2010519680A JP2009549448A JP2009549448A JP2010519680A JP 2010519680 A JP2010519680 A JP 2010519680A JP 2009549448 A JP2009549448 A JP 2009549448A JP 2009549448 A JP2009549448 A JP 2009549448A JP 2010519680 A JP2010519680 A JP 2010519680A
- Authority
- JP
- Japan
- Prior art keywords
- cathode
- hollow chamber
- cathode body
- magnets
- magnet
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005495 cold plasma Effects 0.000 title claims abstract description 8
- 238000012545 processing Methods 0.000 title description 5
- 239000002826 coolant Substances 0.000 claims description 10
- 238000010849 ion bombardment Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 7
- 238000005121 nitriding Methods 0.000 claims description 5
- 238000011282 treatment Methods 0.000 claims description 5
- 239000000696 magnetic material Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 2
- 239000012530 fluid Substances 0.000 claims description 2
- 238000007789 sealing Methods 0.000 claims description 2
- 239000012809 cooling fluid Substances 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 238000013021 overheating Methods 0.000 description 4
- 239000000758 substrate Substances 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 229910000963 austenitic stainless steel Inorganic materials 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- QJVKUMXDEUEQLH-UHFFFAOYSA-N [B].[Fe].[Nd] Chemical compound [B].[Fe].[Nd] QJVKUMXDEUEQLH-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910000828 alnico Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- KPLQYGBQNPPQGA-UHFFFAOYSA-N cobalt samarium Chemical compound [Co].[Sm] KPLQYGBQNPPQGA-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 239000000284 extract Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910001172 neodymium magnet Inorganic materials 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910000938 samarium–cobalt magnet Inorganic materials 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32596—Hollow cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/466—Radiofrequency discharges using capacitive coupling means, e.g. electrodes
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H2240/00—Testing
- H05H2240/20—Non-thermal plasma
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Plasma Technology (AREA)
- Discharge Heating (AREA)
- Chemical Vapour Deposition (AREA)
- Solid-Phase Diffusion Into Metallic Material Surfaces (AREA)
- Physical Vapour Deposition (AREA)
Abstract
Description
1a 中空チャンバ
1b ホール
2 磁石
3 冷却器
3a 中央凹部
7 ねじ
8 O−リング
Claims (13)
- プラズマを閉じ込めるための中空チャンバ(1a)を有するカソード(1)を使用した真空筐体内においてコールドプラズマを生成する装置であって、
各中空チャンバ(1a)の周囲に配置され、かつ力線周りに電子を回転させる磁場を形成するために適した手段(2)を備え、
カソード本体(1)が、各中空チャンバ(1a)において強いイオン衝撃によって生成された熱を取り出すための冷却媒体を循環させるために適した素子(3)と連携することを特徴とする装置。 - 磁場を形成するために適した手段(2)が、磁石から構成されたことを特徴とする請求項1に記載の装置。
- 磁石(2)が、ホール状の中空チャンバ(1a)と平行に配置されたことを特徴とする請求項2に記載の装置。
- 磁石(2)が、冷却媒体と連結されたホール(1b)内に配置され、中空チャンバ(1a)が、筐体内の真空側上で末端部を成すことを特徴とする請求項1に記載の装置。
- 冷却媒体を循環させる素子(3)が、カソード本体(1)から独立しており、密封方法により、それ上に固定されていることを特徴とする請求項1に記載の装置。
- 冷却媒体を循環させる素子(3)及びカソード本体(1)が、単一ユニットで構成されていることを特徴とする請求項1に記載の装置。
- カソード本体(1)及び流体を循環させるために適した素子(3)が、非−磁性かつ導電材料から形成されていることを特徴とする請求項1に記載の装置。
- 磁石(2)が、全て同じ南北方向の配向を有することを特徴とする請求項2に記載の装置。
- 磁石(2)が、ランダムに配向されていることを特徴とする請求項2に記載の装置。
- 磁石(2)が、交互の配向を有することを特徴とする請求項2に記載の装置。
- 磁石(2)が、永久型であり、カソード本体(1)のホール(1b)内に固定された円筒体から構成されたことを特徴とする請求項2又は4に記載の装置。
- 熱化学処理のための請求項1から11のいずれか一項に記載の装置の使用。
- 窒化のための請求項1から11のいずれか一項に記載の装置の使用。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0753289 | 2007-02-15 | ||
FR0753289A FR2912864B1 (fr) | 2007-02-15 | 2007-02-15 | Dispositif pour generer un plasma froid dans une enceinte sous vide et utilisation du dispositif pour des traitements thermochimiques |
PCT/FR2008/050166 WO2008104669A2 (fr) | 2007-02-15 | 2008-02-01 | Dispositif pour générer un plasma froid dans une enceinte sous vide et utilisation du dispositif pour des traitements thermochimiques |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015033726A Division JP5798697B2 (ja) | 2007-02-15 | 2015-02-24 | 真空筐体内においてコールドプラズマを生成する装置、熱化学処理および窒化に対する該装置の使用 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010519680A true JP2010519680A (ja) | 2010-06-03 |
JP5735214B2 JP5735214B2 (ja) | 2015-06-17 |
Family
ID=38474300
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009549448A Active JP5735214B2 (ja) | 2007-02-15 | 2008-02-01 | 真空筐体内においてコールドプラズマを生成する装置及び熱化学処理に対する該装置の使用 |
JP2015033726A Active JP5798697B2 (ja) | 2007-02-15 | 2015-02-24 | 真空筐体内においてコールドプラズマを生成する装置、熱化学処理および窒化に対する該装置の使用 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015033726A Active JP5798697B2 (ja) | 2007-02-15 | 2015-02-24 | 真空筐体内においてコールドプラズマを生成する装置、熱化学処理および窒化に対する該装置の使用 |
Country Status (11)
Country | Link |
---|---|
US (1) | US9011655B2 (ja) |
EP (1) | EP2110007B1 (ja) |
JP (2) | JP5735214B2 (ja) |
AT (1) | ATE532392T1 (ja) |
CA (1) | CA2677227C (ja) |
ES (1) | ES2375778T3 (ja) |
FR (1) | FR2912864B1 (ja) |
PL (1) | PL2110007T3 (ja) |
SI (1) | SI2110007T1 (ja) |
TW (1) | TWI477203B (ja) |
WO (1) | WO2008104669A2 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0773994A (ja) * | 1993-07-12 | 1995-03-17 | Boc Group Inc:The | 中空陰極アレイおよびこれを用いた表面処理方法 |
WO2000065887A1 (en) * | 1999-04-28 | 2000-11-02 | Bardos Ladislav | Method and apparatuses for plasma treatment |
JP2002241947A (ja) * | 2001-02-16 | 2002-08-28 | Ishikawajima Harima Heavy Ind Co Ltd | 薄膜形成装置 |
WO2002079815A2 (en) * | 2001-03-28 | 2002-10-10 | Cpfilms, Inc. | Bipolar plasma source, plasma sheet source, and effusion cell utilizing a bipolar plasma source |
JP2007250478A (ja) * | 2006-03-18 | 2007-09-27 | Nano Electronics & Micro System Technologies Inc | プラズマ処理システム |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4637853A (en) * | 1985-07-29 | 1987-01-20 | International Business Machines Corporation | Hollow cathode enhanced plasma for high rate reactive ion etching and deposition |
DE4109619C1 (ja) * | 1991-03-23 | 1992-08-06 | Leybold Ag, 6450 Hanau, De | |
US5482611A (en) * | 1991-09-30 | 1996-01-09 | Helmer; John C. | Physical vapor deposition employing ion extraction from a plasma |
SE503141C2 (sv) * | 1994-11-18 | 1996-04-01 | Ladislav Bardos | Apparat för alstring av linjär ljusbågsurladdning för plasmabearbetning |
JP4043089B2 (ja) * | 1997-02-24 | 2008-02-06 | 株式会社エフオーアイ | プラズマ処理装置 |
DE19722624C2 (de) * | 1997-05-30 | 2001-08-09 | Je Plasmaconsult Gmbh | Vorrichtung zur Erzeugung einer Vielzahl von Niedertemperatur-Plasmajets |
US6093293A (en) * | 1997-12-17 | 2000-07-25 | Balzers Hochvakuum Ag | Magnetron sputtering source |
US6066826A (en) * | 1998-03-16 | 2000-05-23 | Yializis; Angelo | Apparatus for plasma treatment of moving webs |
US6528947B1 (en) * | 1999-12-06 | 2003-03-04 | E. I. Du Pont De Nemours And Company | Hollow cathode array for plasma generation |
DE10060002B4 (de) * | 1999-12-07 | 2016-01-28 | Komatsu Ltd. | Vorrichtung zur Oberflächenbehandlung |
JP4212210B2 (ja) * | 1999-12-07 | 2009-01-21 | 株式会社小松製作所 | 表面処理装置 |
US6451177B1 (en) * | 2000-01-21 | 2002-09-17 | Applied Materials, Inc. | Vault shaped target and magnetron operable in two sputtering modes |
WO2002019379A1 (en) * | 2000-08-28 | 2002-03-07 | Institute For Plasma Research | Device and process for producing dc glow discharge |
US6406599B1 (en) * | 2000-11-01 | 2002-06-18 | Applied Materials, Inc. | Magnetron with a rotating center magnet for a vault shaped sputtering target |
JP4554117B2 (ja) * | 2001-07-13 | 2010-09-29 | キヤノンアネルバ株式会社 | 表面処理装置 |
US7931787B2 (en) * | 2002-02-26 | 2011-04-26 | Donald Bennett Hilliard | Electron-assisted deposition process and apparatus |
US6837975B2 (en) * | 2002-08-01 | 2005-01-04 | Applied Materials, Inc. | Asymmetric rotating sidewall magnet ring for magnetron sputtering |
DE502004007133D1 (de) * | 2004-06-22 | 2008-06-26 | Applied Materials Gmbh & Co Kg | Zerstäubungskatode für Beschichtungsprozesse |
JP4358192B2 (ja) * | 2006-02-09 | 2009-11-04 | 株式会社エフオーアイ | プラズマ発生装置 |
JP4094040B2 (ja) * | 2006-08-18 | 2008-06-04 | 株式会社エフオーアイ | プラズマ発生装置 |
-
2007
- 2007-02-15 FR FR0753289A patent/FR2912864B1/fr not_active Expired - Fee Related
-
2008
- 2008-02-01 EP EP08762026A patent/EP2110007B1/fr active Active
- 2008-02-01 ES ES08762026T patent/ES2375778T3/es active Active
- 2008-02-01 WO PCT/FR2008/050166 patent/WO2008104669A2/fr active Application Filing
- 2008-02-01 JP JP2009549448A patent/JP5735214B2/ja active Active
- 2008-02-01 AT AT08762026T patent/ATE532392T1/de active
- 2008-02-01 SI SI200830528T patent/SI2110007T1/sl unknown
- 2008-02-01 CA CA2677227A patent/CA2677227C/fr active Active
- 2008-02-01 US US12/526,904 patent/US9011655B2/en active Active
- 2008-02-01 PL PL08762026T patent/PL2110007T3/pl unknown
- 2008-02-04 TW TW097104355A patent/TWI477203B/zh active
-
2015
- 2015-02-24 JP JP2015033726A patent/JP5798697B2/ja active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0773994A (ja) * | 1993-07-12 | 1995-03-17 | Boc Group Inc:The | 中空陰極アレイおよびこれを用いた表面処理方法 |
WO2000065887A1 (en) * | 1999-04-28 | 2000-11-02 | Bardos Ladislav | Method and apparatuses for plasma treatment |
JP2002241947A (ja) * | 2001-02-16 | 2002-08-28 | Ishikawajima Harima Heavy Ind Co Ltd | 薄膜形成装置 |
WO2002079815A2 (en) * | 2001-03-28 | 2002-10-10 | Cpfilms, Inc. | Bipolar plasma source, plasma sheet source, and effusion cell utilizing a bipolar plasma source |
JP2007250478A (ja) * | 2006-03-18 | 2007-09-27 | Nano Electronics & Micro System Technologies Inc | プラズマ処理システム |
Also Published As
Publication number | Publication date |
---|---|
SI2110007T1 (sl) | 2012-03-30 |
EP2110007A2 (fr) | 2009-10-21 |
JP2015156376A (ja) | 2015-08-27 |
ATE532392T1 (de) | 2011-11-15 |
FR2912864B1 (fr) | 2009-07-31 |
US20100116643A1 (en) | 2010-05-13 |
WO2008104669A3 (fr) | 2008-11-06 |
TWI477203B (zh) | 2015-03-11 |
CA2677227C (fr) | 2016-01-12 |
PL2110007T3 (pl) | 2012-03-30 |
CA2677227A1 (fr) | 2008-09-04 |
TW200843566A (en) | 2008-11-01 |
EP2110007B1 (fr) | 2011-11-02 |
WO2008104669A2 (fr) | 2008-09-04 |
JP5735214B2 (ja) | 2015-06-17 |
JP5798697B2 (ja) | 2015-10-21 |
FR2912864A1 (fr) | 2008-08-22 |
ES2375778T3 (es) | 2012-03-06 |
US9011655B2 (en) | 2015-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3730867B2 (ja) | プラズマ蒸着法並びに磁気バケットおよび同心プラズマおよび材料源を備える装置 | |
JP4527431B2 (ja) | プラズマ処理装置 | |
EP0792572B1 (en) | An apparatus for generation of a linear arc discharge for plasma processing | |
TWI293855B (en) | Plasma reactor coil magnet system | |
US20160027608A1 (en) | Closed drift magnetic field ion source apparatus containing self-cleaning anode and a process for substrate modification therewith | |
TW200403753A (en) | Etch chamber with dual frequency biasing sources and a single frequency plasma generating source | |
JPH0213026B2 (ja) | ||
JPS59143330A (ja) | プラズマエツチング装置 | |
JP2012124168A (ja) | ビーム状プラズマ源 | |
US20100074807A1 (en) | Apparatus for generating a plasma | |
US20100219160A1 (en) | Method of treating a surface of at least one part by means of individual sources of an electron cyclotron resonance plasma | |
US4847476A (en) | Ion source device | |
JPS6272121A (ja) | 半導体処理装置 | |
JP5798697B2 (ja) | 真空筐体内においてコールドプラズマを生成する装置、熱化学処理および窒化に対する該装置の使用 | |
KR100449524B1 (ko) | 플라즈마 처리방법 및 장치 | |
US7884302B2 (en) | Plasma processing installation, influenced by a magnetic field, for processing a continuous material or a workpiece | |
JP2005150606A (ja) | プラズマ処理装置 | |
JP2009272127A (ja) | プラズマ発生装置及びプラズマ処理装置 | |
JPH01302645A (ja) | 放電装置 | |
WO2009048294A2 (en) | Magnetized inductively coupled plasma processing apparatus and generating method | |
KR910008976B1 (ko) | 전자시이클로트론 공명(Electron Cyclotron Resonance)을 이용한 플라즈마 발생장치 | |
JP2871619B2 (ja) | ダイヤモンド様炭素薄膜堆積装置 | |
JP5896384B2 (ja) | ラジカル源 | |
JP2015015249A (ja) | プラズマ発生装置、プラズマ処理装置、プラズマ発生方法およびプラズマ処理方法 | |
JP2013041703A (ja) | ラインプラズマ発生装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101005 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120828 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20121128 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20121205 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121228 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20130709 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20131111 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20131119 |
|
A912 | Re-examination (zenchi) completed and case transferred to appeal board |
Free format text: JAPANESE INTERMEDIATE CODE: A912 Effective date: 20140117 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20141125 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20141128 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20150224 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20150416 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5735214 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |