JP2010501915A - メモリ用モジュールコマンド構造およびメモリシステム - Google Patents
メモリ用モジュールコマンド構造およびメモリシステム Download PDFInfo
- Publication number
- JP2010501915A JP2010501915A JP2009524852A JP2009524852A JP2010501915A JP 2010501915 A JP2010501915 A JP 2010501915A JP 2009524852 A JP2009524852 A JP 2009524852A JP 2009524852 A JP2009524852 A JP 2009524852A JP 2010501915 A JP2010501915 A JP 2010501915A
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- JP
- Japan
- Prior art keywords
- memory
- command
- address
- identifier
- memory device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000015654 memory Effects 0.000 title claims abstract description 250
- 238000004891 communication Methods 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 26
- 230000008569 process Effects 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 230000007246 mechanism Effects 0.000 description 26
- 238000010586 diagram Methods 0.000 description 14
- 238000012545 processing Methods 0.000 description 13
- 239000000872 buffer Substances 0.000 description 11
- 239000004065 semiconductor Substances 0.000 description 5
- 238000012937 correction Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000013500 data storage Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 238000007726 management method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- WVMLRRRARMANTD-FHLIZLRMSA-N ram-316 Chemical compound C1=CCC[C@@]2(O)[C@H]3CC4=CC=C(OC)C(O)=C4[C@]21CCN3C WVMLRRRARMANTD-FHLIZLRMSA-N 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
- G06F13/38—Information transfer, e.g. on bus
- G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
- G06F13/4204—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus
- G06F13/4234—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus
- G06F13/4243—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus with synchronous protocol
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
- G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
- G11C7/1042—Read-write modes for single port memories, i.e. having either a random port or a serial port using interleaving techniques, i.e. read-write of one part of the memory while preparing another part
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/06—Address interface arrangements, e.g. address buffers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/10—Decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Theoretical Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Read Only Memory (AREA)
- Memory System (AREA)
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US83932906P | 2006-08-22 | 2006-08-22 | |
US90200307P | 2007-02-16 | 2007-02-16 | |
US89270507P | 2007-03-02 | 2007-03-02 | |
PCT/CA2007/001428 WO2008022434A1 (fr) | 2006-08-22 | 2007-08-20 | structure de commande modulaire pour une mémoire et un système de mémoire |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010501915A true JP2010501915A (ja) | 2010-01-21 |
JP2010501915A5 JP2010501915A5 (fr) | 2010-09-24 |
Family
ID=39106428
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009524852A Pending JP2010501915A (ja) | 2006-08-22 | 2007-08-20 | メモリ用モジュールコマンド構造およびメモリシステム |
Country Status (5)
Country | Link |
---|---|
EP (1) | EP2074623A4 (fr) |
JP (1) | JP2010501915A (fr) |
KR (2) | KR101397229B1 (fr) |
TW (1) | TW200826104A (fr) |
WO (1) | WO2008022434A1 (fr) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013525889A (ja) * | 2010-04-19 | 2013-06-20 | モサイド・テクノロジーズ・インコーポレーテッド | 複数のメモリデバイスを有するシステムの状態表示 |
JP2015144006A (ja) * | 2008-10-14 | 2015-08-06 | コンバーサント・インテレクチュアル・プロパティ・マネジメント・インコーポレイテッドConversant Intellectual Property Management Inc. | ディスクリートメモリデバイスをシステムに接続するためのブリッジデバイスを有する複合メモリ |
JP2016181112A (ja) * | 2015-03-24 | 2016-10-13 | 株式会社東芝 | メモリデバイス、半導体装置および情報処理装置 |
JP2021068072A (ja) * | 2019-10-21 | 2021-04-30 | キオクシア株式会社 | メモリシステム及び制御方法 |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7904639B2 (en) | 2006-08-22 | 2011-03-08 | Mosaid Technologies Incorporated | Modular command structure for memory and memory system |
JP5385156B2 (ja) | 2007-02-16 | 2014-01-08 | モサイド・テクノロジーズ・インコーポレーテッド | 半導体デバイスおよび複数の相互接続デバイスを有するシステムの電力消費を低減するための方法 |
US8194481B2 (en) | 2008-12-18 | 2012-06-05 | Mosaid Technologies Incorporated | Semiconductor device with main memory unit and auxiliary memory unit requiring preset operation |
CN103559905A (zh) | 2008-12-18 | 2014-02-05 | 莫塞德技术公司 | 具有主存储单元和需要预设操作的辅存储单元的半导体设备 |
US8037235B2 (en) | 2008-12-18 | 2011-10-11 | Mosaid Technologies Incorporated | Device and method for transferring data to a non-volatile memory device |
TWI477966B (zh) | 2012-05-31 | 2015-03-21 | Silicon Motion Inc | 資料儲存裝置與快閃記憶體操作方法 |
KR102514388B1 (ko) | 2016-03-25 | 2023-03-28 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 메모리 시스템의 동작 방법 |
KR102651425B1 (ko) | 2016-06-30 | 2024-03-28 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 메모리 시스템의 동작 방법 |
US11822793B2 (en) | 2022-04-04 | 2023-11-21 | Western Digital Technologies, Inc. | Complete and fast protection against CID conflict |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001222472A (ja) * | 2000-02-08 | 2001-08-17 | Hitachi Ltd | 記憶素子及びそれを用いた記憶装置 |
JP2005353060A (ja) * | 2004-06-11 | 2005-12-22 | Samsung Electronics Co Ltd | ハブ、メモリモジュール、及びメモリシステムとこれを通じた読み込み方法及び書き込み方法 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5729683A (en) * | 1995-05-18 | 1998-03-17 | Compaq Computer Corporation | Programming memory devices through the parallel port of a computer system |
US6453365B1 (en) * | 1998-02-11 | 2002-09-17 | Globespanvirata, Inc. | Direct memory access controller having decode circuit for compact instruction format |
US7130958B2 (en) * | 2003-12-02 | 2006-10-31 | Super Talent Electronics, Inc. | Serial interface to flash-memory chip using PCI-express-like packets and packed data for partial-page writes |
US7356639B2 (en) * | 2000-01-05 | 2008-04-08 | Rambus Inc. | Configurable width buffered module having a bypass circuit |
US20020161941A1 (en) * | 2001-04-30 | 2002-10-31 | Sony Corporation And Electronics, Inc | System and method for efficiently performing a data transfer operation |
US7308524B2 (en) * | 2003-01-13 | 2007-12-11 | Silicon Pipe, Inc | Memory chain |
US7073010B2 (en) * | 2003-12-02 | 2006-07-04 | Super Talent Electronics, Inc. | USB smart switch with packet re-ordering for interleaving among multiple flash-memory endpoints aggregated as a single virtual USB endpoint |
US8375146B2 (en) * | 2004-08-09 | 2013-02-12 | SanDisk Technologies, Inc. | Ring bus structure and its use in flash memory systems |
-
2007
- 2007-08-20 KR KR1020097005563A patent/KR101397229B1/ko not_active IP Right Cessation
- 2007-08-20 EP EP07800456A patent/EP2074623A4/fr not_active Withdrawn
- 2007-08-20 KR KR1020137030396A patent/KR101514171B1/ko not_active IP Right Cessation
- 2007-08-20 JP JP2009524852A patent/JP2010501915A/ja active Pending
- 2007-08-20 WO PCT/CA2007/001428 patent/WO2008022434A1/fr active Application Filing
- 2007-08-21 TW TW096130974A patent/TW200826104A/zh unknown
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001222472A (ja) * | 2000-02-08 | 2001-08-17 | Hitachi Ltd | 記憶素子及びそれを用いた記憶装置 |
JP2005353060A (ja) * | 2004-06-11 | 2005-12-22 | Samsung Electronics Co Ltd | ハブ、メモリモジュール、及びメモリシステムとこれを通じた読み込み方法及び書き込み方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015144006A (ja) * | 2008-10-14 | 2015-08-06 | コンバーサント・インテレクチュアル・プロパティ・マネジメント・インコーポレイテッドConversant Intellectual Property Management Inc. | ディスクリートメモリデバイスをシステムに接続するためのブリッジデバイスを有する複合メモリ |
JP2013525889A (ja) * | 2010-04-19 | 2013-06-20 | モサイド・テクノロジーズ・インコーポレーテッド | 複数のメモリデバイスを有するシステムの状態表示 |
JP2016181112A (ja) * | 2015-03-24 | 2016-10-13 | 株式会社東芝 | メモリデバイス、半導体装置および情報処理装置 |
JP2021068072A (ja) * | 2019-10-21 | 2021-04-30 | キオクシア株式会社 | メモリシステム及び制御方法 |
JP7458740B2 (ja) | 2019-10-21 | 2024-04-01 | キオクシア株式会社 | メモリシステム及び制御方法 |
Also Published As
Publication number | Publication date |
---|---|
EP2074623A1 (fr) | 2009-07-01 |
WO2008022434A1 (fr) | 2008-02-28 |
KR20130136004A (ko) | 2013-12-11 |
KR101514171B1 (ko) | 2015-04-21 |
KR20090046944A (ko) | 2009-05-11 |
TW200826104A (en) | 2008-06-16 |
EP2074623A4 (fr) | 2010-01-06 |
KR101397229B1 (ko) | 2014-05-20 |
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