WO2008022434A1 - structure de commande modulaire pour une mémoire et un système de mémoire - Google Patents

structure de commande modulaire pour une mémoire et un système de mémoire Download PDF

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Publication number
WO2008022434A1
WO2008022434A1 PCT/CA2007/001428 CA2007001428W WO2008022434A1 WO 2008022434 A1 WO2008022434 A1 WO 2008022434A1 CA 2007001428 W CA2007001428 W CA 2007001428W WO 2008022434 A1 WO2008022434 A1 WO 2008022434A1
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WIPO (PCT)
Prior art keywords
memory
address
command
identifier
commands
Prior art date
Application number
PCT/CA2007/001428
Other languages
English (en)
Inventor
Jin-Ki Kim
Hakjune Oh
Hong Beom Pyeon
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Mosaid Technologies Incorporated
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mosaid Technologies Incorporated filed Critical Mosaid Technologies Incorporated
Priority to KR1020137030396A priority Critical patent/KR101514171B1/ko
Priority to EP07800456A priority patent/EP2074623A4/fr
Priority to JP2009524852A priority patent/JP2010501915A/ja
Priority to KR1020097005563A priority patent/KR101397229B1/ko
Publication of WO2008022434A1 publication Critical patent/WO2008022434A1/fr

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Classifications

    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F13/00—Interconnection of, or transfer of information or other signals between, memories, input/output devices or central processing units
    • G06F13/38—Information transfer, e.g. on bus
    • G06F13/42—Bus transfer protocol, e.g. handshake; Synchronisation
    • G06F13/4204—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus
    • G06F13/4234—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus
    • G06F13/4243—Bus transfer protocol, e.g. handshake; Synchronisation on a parallel bus being a memory bus with synchronous protocol
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/38—Response verification devices
    • G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1042—Read-write modes for single port memories, i.e. having either a random port or a serial port using interleaving techniques, i.e. read-write of one part of the memory while preparing another part
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/06—Address interface arrangements, e.g. address buffers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/10—Decoders
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection

Definitions

  • the present invention relates generally to semiconductor memory devices and in particular to a system having multiple interconnected semiconductor memory devices and command structure for memory devices.
  • a command structure is used by the controller to provide those requests to the individual memory devices containing the data.
  • the command structure may be dependent on the configuration of the interconnected memory devices and can impact performance of the system. For example, if the individual memory devices are in communication with the controller via a common bus, then only one of the individual memory devices may be asserted at any given time. If the individual memory devices are serially interconnected in a chain configuration with only one memory device connected to the controller, then commands for memory devices located later in the chain may be significantly delayed by earlier memory devices performing commands that cannot be interrupted. In a configuration of series-connected memory devices, the processing of a command at one device halts all transmission of commands onto subsequent memory devices, resulting in a suspension of any additional processing in the system.
  • a modular command structure comprising: a device identifier comprising an address for one of a plurality of memory devices and an bank address for one of a plurality of memory banks in the one of the plurality of memory devices; and a command identifier comprising an operation code representing an operation to be performed by the one of the plurality of memory devices.
  • a modular command set comprising: a plurality of separatable commands representing a request from a processor for access to one of a plurality of memory devices, each of the plurality of separate commands comprising: a device identifier comprising an address for the one of a plurality of memory devices and an bank address for one of a plurality of memory banks in the one of the plurality of memory devices; and a command identifier comprising an operation code representing an operation to be performed by the one of the plurality of memory devices.
  • a system comprising: a memory system comprising at least one memory device for storing data; a processor for managing requests for access to the memory system; and a controller for translating the requests from the processor to one or more separatable commands interpretable by the at least one memory device, each command having a modular structure comprising an address identifier for one of the at least one memory devices and a command identifier representing an operation to be performed by the one of the at least one memory devices, the at least one memory device and the controller being in a serial configuration for communication.
  • a controller for a system having a plurality of memory devices for storing data the controller being in a serial configuration for communication with the plurality of memory devices
  • the controller comprising: a first connection for receiving requests from the processor for access to the plurality of memory devices; a translator for translating the requests from the processor to a plurality of separatable commands interpretable by the plurality of memory devices, each command having a modular structure comprising an address identifier for one of the plurality of memory devices and a command identifier representing an operation to be performed by the one of the plurality of memory devices; and a second connection in serial communication with one of the plurality of memory devices for issuing the plurality of separatable commands.
  • a method of requesting access to at least one memory device comprising: determining an address including an address for the at lest one memory device; identifying a plurality of operations that in combination effect a request for access to the at least one memory device; and providing a plurality of separatable commands to the at least one memory device, each of the commands including a device identifier comprising the address and a command identifier comprising one of the plurality of operations, where the command identifier is interpretable by the memory device.
  • a command structure comprising: a plurality of separatable commands representing a request for access to one of a plurality of memory devices.
  • Each of the plurality of separate commands includes: a device identifier comprising an address for the one of a plurality of memory devices and an bank address for one of a plurality of memory banks in the one of the plurality of memory devices; and a command identifier comprising an operation code representing an operation to be performed by the one of the plurality of memory devices.
  • a modular command structure comprising: a device identifier comprising an address for one of a plurality of memory devices and an bank address for one of a plurality of memory banks in the one of the plurality of memory devices; and a command identifier comprising an operation code representing an operation to be performed by the one of the plurality of memory devices.
  • a system comprising: a memory system including at least one memory device for storing data; a processor for managing requests for access to the memory system; and a controller for translating the requests from the processor to one or more separatable commands interpretable by the at least one memory device, each command having a modular structure comprising an address identifier for one of the at least one memory devices and a command identifier representing an operation to be performed by the one of the at least one memory devices; the at least one memory device and the controller being in a series-connection for communication.
  • the at least one memory device includes at least one memory bank.
  • the address identifier may include a device address for one of the at least one memory devices and a bank address for one of the at least one memory banks.
  • the memory device is a flash device, such as a NAND-type flash memory device.
  • the devices may be series-connected or connected to a common bus.
  • a controller for a system having a plurality of memory devices for storing data the controller being in a series-interconnection configuration for communication with the plurality of memory devices.
  • the controller comprising: a first connection for receiving requests for access to the plurality of memory devices; a translator for translating the requests to a plurality of separatable commands interpretable by the plurality of memory devices, each command having a modular structure comprising an address identifier for one of the plurality of memory devices and a command identifier representing an operation to be performed by the one of the plurality of memory devices; and a second connection for communication with one of the plurality of memory devices for issuing the plurality of separatable commands.
  • a method comprising: determining an address including a memory device address; identifying a plurality of operations effecting a request for access to a memory; and providing a plurality of separatable commands for the memory, each of the commands including a device identifier having a memory device address and a command identifier having one of the plurality of operations.
  • the method is used for translating a request for access to a memory device into a plurality of separatable commands interpretable by the memory device.
  • the method may be used for translating a request for access to a memory device into a plurality of separatable commands interpretable by the memory device.
  • Figure 1 is a block diagram illustrating a host system and a system having a memory system and a memory controller, to which embodiments of the present invention are applicable;
  • Figure 2 is a block diagram illustrating a memory system including a plurality of memory devices and a controller connected to the memory system via a common bus, to which embodiments of the present invention are applicable;
  • Figure 3 is a block diagram illustrating a memory system having a plurality of memory devices that are series-interconnected and a controller connected to the memory devices, to which embodiments of the present invention are applicable;
  • Figure 4 is a block diagram illustrating an example of a general configuration of a flash memory device, to which embodiments of the present invention are applicable;
  • Figures 5A, 5B and 5C illustrate examples of modular command structures for use with a NAND flash memory, to which embodiments of the present invention are applicable;
  • Figure 6A is a block diagram illustrating a configuration of a flash controller to which embodiments of the present invention is applicable;
  • Figure 6B is a block diagram illustrating an example of functional components of a flash command engine shown in Figure 6A;
  • Figure 7 is a flow chart illustrating a process conducted by a Page Read command from the controller using the modular command structure
  • Figure 8 illustrates a timing of a Page Read operation with a set wait period from the flash memory device using the modular command structure
  • Figure 9 illustrates a timing of a Page Read operation from the flash memory device with a status request using the modular command structure
  • Figure 10 is a flow chart illustrating a process conducted by a Page Program command from the controller using the modular command structure
  • Figure 1 1 illustrates a timing of a Page Program operation from the flash memory device with a single data input using the modular command structure
  • Figure 12 illustrates a timing of a Page Program operation from the flash memory device with two data inputs using the modular command structure
  • Figure 13 is a flow chart illustrating a process conducted by a Block Erase command from the controller using the modular command structure
  • Figure 14 illustrates a timing of a Block Erase operation with a single block address to erase from the flash memory device using the modular command structure
  • Figure 15 illustrates a timing of a Block Erase operation with two block addresses to erase from the flash memory device using the modular command structure
  • Figure 16 is a flow chart illustrating a process conducted by concurrent Page Read commands from the controller for two memory banks in the same flash memory device using the modular command structure;
  • Figure 17 illustrates a timing from the flash memory of concurrent Page Read operations for two memory banks in the same flash memory device using the modular command structure
  • Figure 18 is a flow chart illustrating a process conducted by concurrent Page Program commands from the controller for two memory banks in the same flash memory device using the modular command structure;
  • Figure 19 illustrates a timing from the flash memory of concurrent Page Program operations for two memory banks in the same flash memory device using the modular command structure;
  • Figure 20 is a flow chart illustrating a process conducted by concurrent Block Erase commands from the controller for two memory banks in the same flash memory device using the modular command structure;
  • Figure 21 illustrates a timing from the flash memory of concurrent Block Erase operations for two memory banks in the same flash memory device using the modular command structure
  • Figure 22 is a flow chart illustrating a process conducted by interleaved Page Read and Page Program commands from the controller for two memory banks in the same flash memory device using the modular command structure;
  • Figure 23 illustrates a timing from the flash memory device of interleaved Page Read and Page Program operations for two memory banks in the same flash memory device using the modular command structure
  • Figure 24 is a flow chart illustrating a process conducted by suspended and resumed Page Read and Page Program commands from the controller for two memory banks in the same flash memory device using the modular command structure;
  • Figure 25 illustrates a timing from the flash memory device of suspended and resumed Page Read and Page Program operations for two memory banks in the same flash memory device using the modular command structure
  • Figure 26 illustrates an example of interleaved and concurrent Page Read, Block Erase, Page Program and Page-pair Erase commands/operations for multiple flash memory devices, each having multiple memory banks;
  • Figure 27 illustrates an example of interleaved and concurrent Page Read commands/operations for multiple flash memory devices, each having multiple memory banks;
  • Figure 28 illustrates an example of interleaved and concurrent suspended and resumed Page Read, Block Erase, Page Program and commands/operations for multiple flash memory devices, each having multiple memory banks.
  • a host system 102 having a processor 103 therein is connected to a system that includes a memory system 106 and a controller 104 for controlling the memory system.
  • the memory system 106 includes at least one memory device (e.g., two flash memory devices 107-0 and 107-1 ).
  • the controller 104 receives requests from the host system 102 and translates the requests into commands that are interpretable by the memory system 106.
  • the controller 104 also translates logical addresses for the memory system 106 that are used by the host system 102 into physical addresses of the memory system 106.
  • the controller 104 ensures that data to be stored in the memory system 106 is distributed among the memory devices 107-0, 107-1.
  • An error correcting code (ECC) is also generated by the controller 104 to check for errors in the execution of commands.
  • FIG. 2 shows an example of a system configuration to which embodiments of the present invention are applicable.
  • a controller 112 communicates with a memory system including a plurality of memory devices (e.g., four flash memory devices 108-0 - 108-3) through a common bus 114.
  • the controller 112 uses the common bus 114 to transfer data into and out of the memory devices 108-0 - 108-3. Only a designated flash memory device is asserted at a time with this configuration by asserting a chip enable signal.
  • FIG. 3 shows another example of a system configuration to which embodiments of the present invention are applicable.
  • a memory system includes series- connected memory devices.
  • a controller 1 16 and a memory system including a plurality of memory devices e.g., four flash memory devices 109-0 - 109-3) are interconnected in a loop configuration. Since the memory devices 109-0 - 109-3 are series- interconnected, only one of the devices receives data and messages incoming to the memory system through the controller 116.
  • Each of the memory devices 109-0 - 109-3 is coupled to at most two other memory devices (i.e., prior and next devices). As such, data and messages coming into the memory system pass through every other memory device to reach the last device 109-3 in the series connection.
  • the flash memory devices can be any type of flash memories, e.g., NAND-,
  • NOR-, AND-type flash memories can be random access memories.
  • NAND flash memory devices are commonly interconnected to provide low cost, high density memory.
  • Figure 4 illustrates the functional components of a NAND flash device 400.
  • the NAND flash device 400 has a memory bank 402 which is a cell array structure having a plurality (n) of erasable blocks. Each of the erasable blocks is subdivided into a plurality (m) of programmable pages. Each of the pages consists of (j+k) bytes. The pages are further divided into a j-byte data storage region in which data is stored and a separate k-byte are typically used for error management functions.
  • Each page typically comprises 2,112 bytes of which 2,048 bytes are used to data storage and 64 bytes are used for error management functions.
  • the memory bank 402 is accessed by the pages. Although Figure 4 shows a single memory bank 402, the NAND flash device 400 may have more than one memory bank 402. Each such memory bank 402 may be able to perform concurrent page read, page program, page erase and block erase operations.
  • Commands for accessing the memory bank 402 are received by a command register 414 and control logic 416 from a controller (e.g. the controller 116 shown in Figure 3).
  • the received commands enter the command register 414 and remain there until execution.
  • the control logic 416 converts the commands into a form that can be executed against the memory bank 402.
  • the commands generally enter the NAND flash device 400 via the assertion of different pins on the external packaging of the chip, where different pins may be used to represent different commands.
  • the commands may include chip enable, read enable, write enable, and write protect.
  • the read and write commands are executed on a page basis while the erase commands are executed on a block basis.
  • a read command is received by the command register 414 and the control logic 416 and an accompanying address is received by the address buffers and latches 418.
  • the address buffers and latches 418 determine the page in which the address is located and provide a row address(es) corresponding to the page to the row decoder 408. The corresponding row is activated.
  • the data register and S/A 404 sense the page and transfer the data from the page into the data register 404. Once the data from the entire page has been transferred to the data register, the data is sequentially read from the device via the I/O buffers and latches 410 and the output driver 412.
  • a program command is also processed on a page basis.
  • the program command is received by the command register 414 and the control logic 416, an accompanying address is received by the address buffers 418 and input data are received by the output driver 412.
  • the input data is transferred to the data register 404 through the I/O buffers and latches 410. Once all of the input data is in the data register 404, the page on which the input data is to be stored is programmed with the input data.
  • An erase command is processed on a block basis. The erase command is received by the command register 414 and the control logic 416 and a block address is received by the address buffers 418.
  • a typical NAND flash memory command uses two cycles of command to complete loading of the command.
  • Table 1 shows an example command set of NAND flash memories.
  • command structure may reduce the processing speed of the entire system as a flash memory device that is processing a command cannot forward other commands to subsequent flash memory devices until that processing is complete.
  • An example of a command structure applicable to a system according to an embodiment of the present invention includes a command field having a byte(s).
  • the command field has a first byte for device and bank addresses and a second byte for operation codes.
  • Figure 5A shows an example of modular command structure for use with a
  • a modular command structure 500 includes first and second bytes 502 and 508 (Bytes 1 and 2), each having a plurality of bits.
  • the first and second bytes 502 and 508 of the command structure include an eight-bit address and an eight-bit operation code, respectively.
  • the first byte 502 has a six-bit address 504 for the destination memory device.
  • the six-bit address 504 is used to differentiate among memory devices where the system includes a plurality of memory devices.
  • the first byte 502 also includes a two-bit address 506 for a memory bank of the memory device for use with memory devices having a plurality of memory banks.
  • the second byte 508 of the command structure includes an eight-bit operation code 510 indicating the command to be performed by the memory device. Table 2 illustrates examples of operation codes.
  • the command structure has many variations.
  • Another example of the two- byte command structure is that the first byte has eight-bit device address (DA) and the second byte has four-bit OP code and a four-bit bank address (BA).
  • DA device address
  • BA bank address
  • FIG. 5B shows another example of modular command structure for use with a NAND flash memory.
  • a command structure 520 includes a plurality of bytes.
  • the command structure 520 has a two-byte modular command structure (Bytes 1 and 2) with a three-byte row address 522 (Bytes 3 - 5).
  • a partial structure of the two-byte modular command in Figure 5B is identical to the two-byte modular command structure shown in Figure 5A.
  • the first byte 502 has a six-bit address 504 for the destination memory device and a two-bit address 506 for the memory bank.
  • the second byte 508 has an eight-bit operation code 510.
  • the three-byte row address 522 provides a 24-bit address 524 for a row(s) in the memory bank indicated in the first byte 502.
  • This 24-bit (i.e., three-byte) row address 524 is used for commands for which a row address is required to specify a row location on which the command is to be performed.
  • Figure 5C shows another example of modular command structures for use with a NAND flash memory.
  • a command structure 540 includes a plurality of bytes.
  • the command structure 540 has a two-byte modular command structure (Bytes 1 and 2) with a two-byte column address 542 (Bytes 3 - 4).
  • a partial structure of the two-byte modular command in Figure 5C is identical to the two- byte modular command in Figure 5B with the first byte 502 having a six-bit address 504 for the destination memory device and a two-bit address 506 for the memory bank.
  • the second byte 508 has an eight-bit operation code 510.
  • the two-byte address 542 provides a 16-bit address 544 for a column(s) in the memory bank indicated in the first byte 502. This 16-bit (i.e., two-byte) column address 544 is used for commands for which a column address is required to specify a column location on which the command is to be performed.
  • the command structures 500, 520 and 540 depend on the command that is being sent to the memory device.
  • the controller 104 translates a request from the host system 102 into one of the command structures 500, 520 and 540 which can then be interpreted by the flash memory devices. Based on the operation code 510, the controller 104 determines whether a row address, column address or no address will be supplied to the memory device. The controller 104 forms the commands that are used by the memory devices 107-0, 107-1 to perform operations.
  • Each of the command structures 500, 520 and 540 includes both the memory device address 504 and the bank address 506. Thus, processing of commands can be broken up and suspended by different memory devices. Further, since the first byte 502 includes all addressing information, each memory device can assess very quickly whether the command indicated in the second byte 508 is destined for them or is to be passed on to the next memory device.
  • modular command structures 500, 520 and 540 can be used in any NAND flash memory device, the following examples describe the processing of various commands in the modular command structures 500, 520 and 540 using an HLNANDTM (HyperLink NAND) flash device as am example.
  • the HLNANDTM flash device is described in detail in U.S. Provisional Patent Application No. 60/839,329 filed on August 22, 2006.
  • An exemplary input sequence of the modular commands 500, 520 and 540, depending on the particular command in the operation code, for the HLNANDTM flash device, is shown in Table 3. All commands, addresses and data are shifted in and out of the device, starting with the most significant bit (MSB).
  • MSB most significant bit
  • serial data input SDn
  • SDE Serial Data-Input Enable
  • the examples below include timing diagrams illustrating processing the memory devices (e.g., the memory devices shown in Figures 1 - 3).
  • the signals in the timing diagrams are shown for the HLNANDTM flash device as an example.
  • the chip enable (CE#) signal indicates that the memory device is enabled when this signal is "low”.
  • the serial data input (SDn) signal indicates command, address and input data.
  • the serial data output (SQn) signal indicates a transmission of output data during a read operation.
  • the serial data input enable (SDE) signal controls data input such that when this signal is "high", command address and input data (SDn) are latched into the device.
  • the serial data output enable signal (SDE) signal enables output (SQn) when this signal is "high”.
  • FIG. 6A shows an example of a flash controller to which embodiments of the present invention are applicable.
  • the flash controller corresponds to the controllers 104, 112 and 116 shown in Figures 1 , 2, and 3.
  • a flash controller 310 includes a central processing unit (CPU) 312; and a memory 314 having a random access memory (RAM) 316 and a read only memory (ROM) 318. Also, the flash controller 310 includes a flash command engine 322, an error correcting code (ECC) manager 324 and a flash device interface 326. Furthermore, the flash controller 310 includes a host interface controller 332 and a host interface 334. The CPU 312, the memory 314, the flash command engine 322 and the host interface controller 332 are connected through a common bus 330.
  • CPU central processing unit
  • memory 314 having a random access memory (RAM) 316 and a read only memory (ROM) 318.
  • the flash controller 310 includes a flash command engine 322, an error correcting code (ECC) manager 324 and a flash device interface 326.
  • ECC error correcting code
  • the flash controller 310 includes a host interface controller 332 and a host interface 334.
  • the host interface 334 is for connection to an external device through a bus, connection links, interface or like (e.g., ATA (Advanced Technology Attachment), PATA (Parallel ATA), SATA (Serial ATA), USB (universal serial bus).
  • the host interface 334 is controlled by the host interface controller 332.
  • the CPU 312 operates with instructions stored in the ROM 318 and processed data is stored in the RAM 316.
  • the flash command engine 322 interprets the commands and the flash controller 310 controls the operations of the flash devices through the flash device interface 326.
  • the ECC manager 324 generates an ECC and the ECC verification is conducted. In a case of an error, an error message is generated.
  • the flash controller 310 can be configured as a system on chip, system in package or multiple chips.
  • FIG. 6B shows an example of functional components of the flash command engine 322 of Figure 6A, when issuing a command to flash devices.
  • the flash command engine 322 interprets the requests from the host system 102 into a plurality of separatable commands that are interpretable by the flash memory device.
  • the flash controller 310 translates a request for access to flash memory device into at least one command using the modular command structure shown in Figures 5A to C.
  • the flash controller 310 includes a connection with the bus 330 connected to the host interface controller 332. The connection enables communication with the host system 102 for receiving requests from the processor 103 of the host system 102 for access to the flash memory device.
  • the flash controller 310 also includes the flash device interface 326 in communication with the flash memory device.
  • the flash device interface 326 acts as another connection for issuing commands to the flash memory devices of the memory system.
  • the flash command engine 322 includes a command structure mechanism
  • the command structure mechanism 558 processes the modular command structures to be used by the memory devices (e.g., the modular command structures shown in Figures 5A to C).
  • the address identify mechanism 564 and the command identify mechanism 566 analyze the request from the host system 102 to extract the memory device and/or bank address and the command, respectively, therefrom.
  • the command identify mechanism 566 determines that multiple commands are to be used to implement the request. Each of the commands is separatable and in combination effects the request from the host system 102.
  • the command identify mechanism 566 gathers the information to formulate the command, including the address from the address identifying mechanism 564. If any of the commands that form the request respects a row or column address then the command identify mechanism 566 enlists the use of the row address identify mechanism 568 or the column address identify mechanism 570, respectively, to obtain the row or column address that form part of the command. [0049]
  • the modular command structure is configured so that a flash memory device having multiple memory banks can have each memory bank processing simultaneously. Likewise, the modular command structure is configured so that the series-connected memory devices can be simultaneously processing.
  • the bank interleave mechanism 560 interleaves commands for different memory banks in the same memory device (see Figures 16 - 21 for examples of concurrent operations in multiple memory banks).
  • the device interleave mechanism 562 interleaves commands for different memory devices in the same memory system (see Figures 22 - 28).
  • the EEC manager 324 generates an error correcting code (ECC) to verify that certain commands have been performed successfully and completely.
  • Figure 6B illustrates the functional components of the flash command engine
  • the modular command can include a Page Read command.
  • a Page Read command With a command structure the first cycle of the Page Read command is input followed by a column address for the start column address in a target page address and a row address for the target page address.
  • the second cycle of the Page Read command in input after which the device is busy for a time period (e.g., 20 ⁇ s) for completion of the internal page read operation. After such a wait time period, a Burst Data Read operation is performed to retrieve the data from buffers of the device. From the time this operation starts until the Burst Data Read is finished, the device cannot perform any other operations.
  • Figure 7 shows a flow of the Page Read command.
  • the controller for the system generates a Page Read command in step 602 including a destination flash device address, a memory bank address, the Page Read operation code and a three-byte row address for the row(s) defining the page to be read.
  • the Page Read command is passed through the flash devices forming the system until the destination flash device address matches the flash device receiving the Page Read command.
  • the Page Read command including the row address(es) is received by the destination flash device.
  • the Page Read command is provided to the command register of the destination flash where the address latch cycles are then started to enter the three-bytes of row address.
  • the Page Read operation is started in the flash device and the data in the selected page is sensed and transferred to the data registers in less than time t R (transfer time from memory bank to data registers, e.g., 20 ⁇ s).
  • the controller either waits for t R to collect the data from the page or the controller generates and sends a device status inquiry to the flash device to receive a notification when the page has been accessed.
  • the command is sent to the flash device in step 604.
  • the flash device will response to this request with a continuous busy indication until the page has been accessed, at which time the flash device indicates that the memory bank is ready and no longer busy.
  • the controller continuous checks to determine whether the memory bank is ready in step 606.
  • step 608 Read command with the device address and the column address is then issued in step 608. If the controller does not send a device status inquiry and waits for t R instead, then steps 604 and 606 are not performed. Once the device receives the Burst Data Read then the SQE signal is enabled and the page data in the data registers is read out in step 610 starting from the column address given with the command. This reading continues via SQn until SQE goes low.
  • ECC error correcting code
  • the flash device controller generates ECC parity bits for 2048 byte input data per page.
  • 2048 byte data with ECC parity bits are programmed (typically one-byte ECC per 512 bytes, total four byte ECC per 2048 bytes in a page).
  • the ECC parity bits are programmed in 64 bytes spare field in a page.
  • the flash device controller reads 2048 bytes data with ECC parity information.
  • the flash device controller verifies the 2048 data with four byte ECC information. Therefore, the ECC process is performed by the flash device controller and the flash memory devices store only ECC parity information.
  • Figure 8 illustrates a timing diagram for a Page Read operation from the perspective of the flash device where the controller waits for the expiration of t R to obtain the requested data. If the Burst Data Read command is issued and SQE is enabled during the Bank Busy period t R , all output data will be invalid.
  • Figure 9 illustrates a timing diagram for a Page Read operation with a device status from the controller from the perspective of the flash device.
  • the modular command can include a Page Program command.
  • a command structure With a command structure the first cycle of the Page Program command is input followed by a column address for the start column address in a target page address and a row address for the target page address.
  • the input data is then loaded followed by the second cycle of the pate program command.
  • the device is busy for a time period (e.g., 200 ⁇ s) after the second cycle during completion of an internal Page Program operation.
  • FIG 10 illustrates a flow of a Page Program command from the flash device controller.
  • the controller for the system generates a Burst Data Load Start command in step 902 including a destination flash device address, a memory bank address, the Burst Data Load Start operation code and a two-byte column address for the column(s) that are to be programmed.
  • the Burst Data Load Start command is passed through the flash devices forming the system until the destination flash device address matches the flash device receiving the Burst Data Load Start command.
  • the Burst Data Load Start command is provided to the command register of the destination flash device along with the two-byte columns address in step 904 and then the input data in step 906.
  • the Burst Data Load Start command resets all data registers in the destination flash device. If the Burst Data Load Start operation did not input all data into the flash device then subsequent Burst Data Load commands may be used to place all data in the device.
  • the flash device controller generates a Page Program command in step 908 again specifying the destination device address and the memory bank address as well as the Page Program operation code and a row address(es) that specify the rows that will be written in the Page Program operation.
  • the Page Program command is generated by the controller a time t DDE after the data has been loaded into the flash device from the Burst Data Load Start command. This will program the loaded data into the selected page location.
  • the controller uses a Device Status command issued in step 910 to monitor the status of the Page Program operation.
  • the flash device will respond to this request with a continuous busy indication until the page has been accessed, at which time the flash device indicates that the memory bank is ready and no longer busy.
  • the controller continuous checks to determine if the memory bank is ready in step 912. Once the memory bank is ready the controller checks to see is the Page Program operation was successful. If not then an error is output in step 916, otherwise, the Page Program operation is completed in step 918.
  • Figure 11 illustrates a timing diagram for a Page Program operation from the perspective of the flash device where the Burst Data Load Start is sufficient to load all data into the device.
  • Figure 12 illustrates a timing diagram for a Page Program operation where a Burst Data Load operation is required after the Burst Data Load Start operation in order to load all data into the device.
  • the modular command can include a Block Erase command.
  • a command structure the first cycle of the Block Erase command is input followed by a row address for the target block address.
  • the second cycle of the Block Erase command is input after which the device is busy for 1.5ms to complete the internal block erase operation.
  • Figure 13 is a flow of a Block Erase operation from the controller.
  • the flash device controller for the system generates an Address Input for Block Erase command in step 1202 including a device address, a memory bank address, an operation code and a three-byte row address in step 1204. If more than one block is to be erased at a time in step 1206 then additional Address Input for Block Erase commands are generated by the controller to specify these additional blocks.
  • the controller When all blocks have been specified, the controller generates a Block Erase command in step 1208 to start eth flash device performing the Block Erase operation for the selected blocks.
  • the Block Erase command generated by the controller includes the device address, the memory bank address and the operation code.
  • the controller issues a Status command in step 1210 that is used to determine when the memory bank is available and the Block Erase operation is completed.
  • the controller continuously checks in step 1212 on the device status until the memory bank is available.
  • Block Erase operation is complete, the controller checks to see if the operation was successful in step 1214. If the operation was not successful then an error is issued in step 1216, otherwise the Block Erase operation is completed in step 1218.
  • Figure 14 illustrates a timing diagram for a Block Erase operation from the perspective of the flash device where only a single block is being erased.
  • Figure 15 illustrates a timing diagram for a Block Erase operation where multiple blocks are being erased.
  • the modular command structures illustrated in Figures 5A to C provide for a memory bank address to be supplied in the first byte along with the device address.
  • This memory bank address is used in circumstances where the flash memory device has more than one memory bank to specify the memory bank to which the command is directed. Since a command with the modular command structure specifies the memory bank address in the command, a flash device having a configuration in which each memory bank operates independently, will be able to have operations being performed on more than one of the memory banks in the flash device at a time.
  • the HLNANDTM flash device is an example of one such flash memory.
  • the pin configuration of multiple HLNANDTM flash devices that are cascaded at the top level may be identical to one of the single devices.
  • each device introduces an additional half clock cycle latency, for example, on a cascading path.
  • the number of cascaded devices determined a total clock latency of operations in the serial interconnection configuration.
  • the controller can effectively schedule many different procedures that are accessing time consuming core operations by interleaving the commands.
  • Figures 16 to 21 illustrate concurrent operations being performed on two memory banks in a single flash memory device.
  • Figure 16 illustrates a flow for a concurrent Page Read operation from two memory banks in the same flash memory device.
  • a Page Read command is given to memory bank 0 in step 1502.
  • Memory bank 0 then proceeds to process the request by accessing the requested page. While memory bank 0 is processing the Page Read command, a second Page Read command is given to memory bank 1 in step 1504.
  • Memory bank 1 then proceeds to process the request by accessing the requested page while memory bank 0 is concurrently processing its own request.
  • a time t R1 after the Page Read request is given to memory bank 0 is then allowed to elapse in step 1506 before a Burst Data Read command is given to memory bank 0 in step 1508 to access the data resulting from the Page Read command issued in step 1502.
  • a time t R2 after the Page Read request is given to memory bank 1 is allowed to elapse in step 1510 before a Burst Data Read command is given to memory bank 1 in step 1512 to access the data resulting from the Page Read command issued in step 1504.
  • Figure 17 illustrates a timing of the concurrent Page Read operation illustrated in Figure 16.
  • Figure 18 illustrates a flow for a concurrent Page Program operation in two memory banks of the same flash memory device.
  • a Burst Data Load Start command is given to memory bank 0 in step 1702 along with data to be programmed into memory bank 0.
  • a Burst Data Load Start command is given to memory bank 1 in step 1704 along with data to be programmed into memory bank 1.
  • a Page Program command is given to memory bank 1 in step 1706 and a Page Program command is given to memory bank 1 in step 1708.
  • Read Status commands are given to memory bank 0 in step 1710 and memory bank 1 in step 1712 to monitor the progress of each memory bank in completing the Page Program operation. When the status returns a pass for each memory bank then the Page Program operations are complete and other operations can be performed by the memory banks.
  • Figure 18 shows the Burst Data Load Start command being given to each memory bank before the Page Program command was provided to each bank.
  • the Burst Data Load Start and the Page Program command may both be given to memory bank 0 before either of the commands is given to memory bank 1.
  • Figure 19 illustrates a timing of the concurrent Page Program operation in which the Burst Data Load Start and the Page Program command are given to memory bank 0 before either of the commands is given to memory bank 1.
  • Figure 20 illustrates a flow for a concurrent Block Erase operation in two memory banks of the same flash memory device.
  • An Address Input for Block Erase command is given to memory bank 0 in step 1902 along with the address of the block to be erased.
  • An Address Input for Block Erase command is given to memory bank 1 in step 1904 along with the address of the block to be erased.
  • a Block Erase command is provided to memory bank 0 in step 1906 upon receipt of which the block indicated in the Address Input for Block Erase command received in step 1902 is erased.
  • a Block Erase command is provided to memory bank 0 in step 1908 upon receipt of which the block indicated in the Address Input for Block Erase command received in step 1604 is erased.
  • a Read Status command is given to memory bank 0 in step 1910 and also to memory bank 1 in step 1912 to monitor the progression of the Block Erase operation. When the status returns a pass for each memory bank then the Block Erase operations are complete and other operation can be performed by the memory banks.
  • Figure 20 shows the Address Input for Block Erase command being given to each memory bank before the Block Erase command was provided to each bank.
  • the Address Input for Block Erase and the Block Erase command may both be given to memory bank 0 before either of the commands is given to memory bank 1.
  • Figure 21 illustrates a timing of the concurrent Block Erase operation in which the Address Input for Block Erase and the Block Erase command are given to memory bank 0 before either of the commands is given to memory bank 1.
  • Figures 22 to 25 illustrate different operations being performed concurrently by two memory banks of the same flash memory device.
  • Figure 22 illustrates a flow for concurrent Page Read and Page Program operations in two memory banks of the same flash memory device.
  • a Page Read command is given to memory bank 0 in step 2102. While memory bank 0 is accessing the page indicated in the Page Read command, a Burst Data Load Start command is given to memory bank 1 in step 2104 along with data that is to be programmed into memory bank 1.
  • a Page Program command is given to memory bank 1 in step 2106 to start programming of the data into memory bank 1.
  • a time t R is allowed to elapse in step 2108 after the Page Read command is given in step 2102 to allow memory bank 0 to retrieve the requested data before a Burst Data Read command is given in step 2110 to memory bank 0 to access the data retrieved from the Page Read operation.
  • a Read Status command is given to memory bank 1 in step 2112 to monitor the progression of the Page Program operation. When the status returns a pass for memory bank 1 then the Page Program operation is complete and other operations can be performed by memory bank 1.
  • Figure 23 illustrates a timing of the concurrent Page Read and Page Program operations from Figure 22.
  • Figure 24 illustrates a flow for a suspending and resuming operations being performed in two memory banks of the same flash memory device where a Page Read operation is being performed at memory bank 0 and a Page Program operation is being performed at memory bank 1.
  • a Burst Data Load Start is given to memory bank 1 in step 2302 along with data to the programmed into memory bank 1. Before all of the data in the Burst Data Load Start operation is loaded into memory bank 1 , this operation is suspended when a Page Read command is given to memory bank 0 in step 2306.
  • step 2308 After the Page Read command has been completely received by memory bank 0, and while memory bank 0 is accessing the requested page, the operation on memory bank 1 is resumed in step 2308 using a Burst Data Load operation with the remaining data.
  • a Page Program command is given to memory bank 1 in step 2310 to start programming of the data therein.
  • a time t R is allowed to elapse in step 2312 after the Page Read command is given to memory bank 1 in step 2306.
  • a Burst Data Read command is given to memory bank 0 in step 2314 to start the extraction of the requested data from memory bank 0.
  • the Burst Data Read command is suspended in step 2316 when a Read Status command is given to memory bank 1 in step 2318 to monitor the status of the memory bank.
  • the Burst Data Read command is resumed in step 2320 once the Read Status command has been received.
  • Memory bank 1 returns a pass to the Read Status command when the Page Program operation is complete and other operations can be performed by memory bank 1.
  • Figure 25 illustrates a timing of the suspended and resumed Page Read
  • Figures 26 to 28 show interleaving of operations between multiple devices.
  • Figure 25 shows Page Read operations at both memory bank 0 and memory bank 1 of flash device 0 and flash device 1 , a Block Erase operation at memory bank 0 of flash device 2, Page Program operations at memory bank 1 of flash device 2 and at memory bank 0 of flash device 3 and a Pair-pair Erase operation at memory bank 1 of flash device 3.
  • Figure 26 shows Page Read operations at memory banks 0 and 1 of flash devices 0, 1 , 2 and 3.
  • Figure 28 shows a Page Program operation at memory bank 0 of flash device 0 followed by a Page Read operation, a Page Read operation followed by a Block Erase operation at memory bank 1 of flash device 0, Block Erase operations at memory bank 0 of flash devices 1 and 3 and at memory bank 1 of flash devices 2 and 3, a Page Program operation at memory bank 1 of flash device 1 , and a Page Read operation followed by a Page Program operation at memory bank 0 of flash device 2.
  • the memory devices have been described as flash memory devices. It will be apparent to those of ordinary skill in the art that the memory devices can be random access memory devices: e.g., dynamic random access memories (DRAMs), static random access memories (SRAMs), magnetoresistive random access memories (MRAMs). Also, the plurality of memory devices included in a memory system can be devices having identical device type or mixed device types. A configuration of series-connected multiple devices of mixed type is disclosed in U.S. Provisional Patent Application No. 60/868,773 filed December 6, 2006. [0084] In the embodiments described above, the device elements and circuits are connected to each other as shown in the figures for the sake of simplicity.
  • DRAMs dynamic random access memories
  • SRAMs static random access memories
  • MRAMs magnetoresistive random access memories
  • the plurality of memory devices included in a memory system can be devices having identical device type or mixed device types. A configuration of series-connected multiple devices of mixed type is disclosed in U.S. Provisional Patent Application No. 60/868,773 filed December 6, 2006.

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Abstract

L'invention concerne un système comprenant un système de mémoire et un contrôleur de mémoire connecté à un système hôte. Le système de mémoire a au moins un dispositif de mémoire stockant des données. Le contrôleur traduit les demandes provenant du système hôte en une ou plusieurs commandes séparables interprétables par ledit ou lesdits dispositifs de mémoire. Chaque commande a une structure modulaire comprenant un identifiant d'adresse pour ledit ou lesdits dispositifs de mémoire et un identifiant de commande représentant une opération à réaliser par l'un desdits dispositifs de mémoire. Ledit ou lesdits dispositifs de mémoire et le contrôleur sont dans une configuration de connexion en série pour la communication de telle sorte que seulement un dispositif de mémoire est en communication avec le contrôleur pour une entrée dans le système de mémoire. Le système de mémoire peut comprendre une pluralité de dispositifs de mémoire connectée à un bus commun.
PCT/CA2007/001428 2006-08-22 2007-08-20 structure de commande modulaire pour une mémoire et un système de mémoire WO2008022434A1 (fr)

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KR1020137030396A KR101514171B1 (ko) 2006-08-22 2007-08-20 메모리 시스템 및 메모리를 위한 모듈러 커맨드 스트럭처
EP07800456A EP2074623A4 (fr) 2006-08-22 2007-08-20 Structure de commande modulaire pour une mémoire et un système de mémoire
JP2009524852A JP2010501915A (ja) 2006-08-22 2007-08-20 メモリ用モジュールコマンド構造およびメモリシステム
KR1020097005563A KR101397229B1 (ko) 2006-08-22 2007-08-20 메모리 시스템 및 메모리를 위한 모듈러 커맨드 스트럭처

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US90200307P 2007-02-16 2007-02-16
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US89270507P 2007-03-02 2007-03-02
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JP2012505448A (ja) * 2008-10-14 2012-03-01 モサイド・テクノロジーズ・インコーポレーテッド ディスクリートメモリデバイスをシステムに接続するためのブリッジデバイスを有する複合メモリ
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US8037235B2 (en) 2008-12-18 2011-10-11 Mosaid Technologies Incorporated Device and method for transferring data to a non-volatile memory device
US8194481B2 (en) 2008-12-18 2012-06-05 Mosaid Technologies Incorporated Semiconductor device with main memory unit and auxiliary memory unit requiring preset operation
US9927994B2 (en) 2016-06-30 2018-03-27 SK Hynix Inc. Memory system and operating method thereof

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KR20130136004A (ko) 2013-12-11
KR101514171B1 (ko) 2015-04-21
KR20090046944A (ko) 2009-05-11
TW200826104A (en) 2008-06-16
JP2010501915A (ja) 2010-01-21
EP2074623A4 (fr) 2010-01-06
KR101397229B1 (ko) 2014-05-20

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