JP2010272855A - Method of manufacturing semiconductor device and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device, the method sufficiently suppressing chip flying caused in a dicing process and both chip break and pickup error caused in a pickup process; and to provide the semiconductor device. <P>SOLUTION: The method of manufacturing the semiconductor device includes: a preparation step of preparing a laminate 100 for which a semiconductor wafer 3, an adhesion film 1 and a dicing tape 2 are laminated in this order, a radiation curing type glue layer 10 is provided on the adhesion film side, and the 90° peeling strength of the adhesion film and the dicing tape is 0.2-0.6 N/25 mm; a dicing step of dicing it into semiconductor chips and cutting the adhesion film; a radiation irradiation step of irradiating the laminate with radiation from the dicing tape side so that the 90° peeling strength between the adhesion film and the dicing tape becomes 0.4 N/25 mm or less; a pickup step of picking up the semiconductor chip and obtaining the semiconductor chip with the adhesion film; and an adhesion step of bonding the semiconductor chip to a support member for loading the semiconductor chip. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a semiconductor device manufacturing method and a semiconductor device.

  Conventionally, silver paste has been mainly used for joining a semiconductor chip and a semiconductor chip mounting support member. However, with the recent miniaturization and high performance of semiconductor chips, there has been a demand for smaller and finer support members to be used. Furthermore, along with demands for miniaturization and higher density of portable devices and the like, semiconductor devices in which a plurality of semiconductor chips are stacked are being developed and mass-produced. In such a case, the above silver paste satisfies the above requirements due to occurrence of defects during wire bonding due to protrusion or inclination of the semiconductor chip, difficulty in controlling the thickness of the adhesive layer, and generation of voids in the adhesive layer. It has become impossible to deal with. Therefore, in recent years, a film-like adhesive (hereinafter referred to as an adhesive film) has been used.

  The adhesive film is used by any of the following methods. (1) The adhesive film is cut into an arbitrary size and attached onto a substrate with wiring or a semiconductor chip, and the semiconductor chip is thermocompression bonded. (2) The adhesive film is attached to the entire semiconductor wafer and then separated (diced) with a rotary blade to obtain a semiconductor chip with an adhesive film, which is thermocompression bonded to the substrate with wiring or the semiconductor chip. Particularly, in recent years, the method (2) is mainly used for the purpose of simplifying the manufacturing process of the semiconductor device. In this method, a dicing tape having a glue layer is used in order to fix and protect the laminate of the semiconductor wafer and the adhesive film during dicing, and to suppress chip jump.

  In the method (2), in order to increase the manufacturing yield of the semiconductor device, it is possible to suppress chip skipping during dicing, and to suppress chip cracks and pickup mistakes when picking up a semiconductor chip with an adhesive film. Is important.

  When the adhesive layer of the dicing tape is a pressure-sensitive adhesive layer, the adhesive force cannot be controlled before and after the dicing process. Therefore, in order to suppress both chip jumping and chip cracking, the adhesive layer has different adhesive forces depending on the chip size. The manufacturing process becomes complicated. On the other hand, a dicing tape having a radiation-curable adhesive layer is known, and the adhesive force of this tape can be changed by irradiation with radiation (see, for example, Patent Document 1 below).

JP 2005-11839 A

  With the recent thinning of semiconductor wafers, it has become more difficult to remove (pick up) individual semiconductor chips with adhesive film without cracking, and even if a dicing tape having a radiation curable adhesive layer is used. In some cases, chip cracks or pickup mistakes occurred.

  The present invention has been made in view of the above circumstances, and is a semiconductor device that can sufficiently suppress both chip jumping in the dicing process and chip cracking and pickup mistakes in the pickup process, and can manufacture a semiconductor device with high yield. An object is to provide a manufacturing method and a semiconductor device.

  In order to solve the above-mentioned problems, the present inventors have diligently studied. As a result, the laminate of the semiconductor wafer and the adhesive film was diced using a dicing tape having a radiation-curable adhesive layer, and then the dicing tape was used. When irradiated with radiation, the 90 ° peel strength between the cut adhesive film and the dicing tape shows a significantly higher value (peak) than the other areas at the location corresponding to the dicing line, which is a semiconductor chip. I found it difficult to pick up. In the dicing line, a mixture composed of a semiconductor (for example, silicon) scraped by dicing, an adhesive film, a glue layer of a dicing tape and a base material is deposited. The present inventors have hypothesized that one of the reasons for the increase in peel strength in the dicing line is that (1) the deposit is cured by irradiation, and (2) the deposit is converted into oxygen in the air. We thought about the involvement of the deposits, such as the fact that they did not sufficiently cure even when exposed to radiation, and the stickiness of the deposits was developed. In addition, the present inventors consider that, as factors other than deposits, (3) radiation irradiation efficiency to the glue layer of the dicing tape is reduced because it is difficult to obtain radiation reflection by silicon near the dicing line. It was.

  Based on these ideas, the present inventors have continued further studies. As a result, when a semiconductor chip with an adhesive film is obtained by dicing a laminate of a semiconductor wafer, an adhesive film, and a dicing tape having a radiation-curable adhesive layer. By irradiating the adhesive layer of the dicing tape at least once before and after dicing, the 90 ° peel strength of the adhesive film and the dicing tape can be adjusted to a predetermined range, and dicing can be performed. Later, it was found that a semiconductor chip with an adhesive film can be picked up from the one in which the 90 ° peel strength between the adhesive film and the dicing tape is adjusted to a predetermined value or less, thereby finding that the above problems can be solved and completing the present invention. It came.

  That is, in the present invention, a semiconductor wafer, an adhesive film, and a dicing tape are laminated in this order, the dicing tape has a radiation-curable adhesive layer on the adhesive film side, and the adhesive film and the dicing tape Preparing a laminate having a 90 ° peel strength of 0.2 to 0.6 N / 25 mm, and dicing the laminate from the semiconductor wafer side to divide the semiconductor wafer into semiconductor chips. A dicing step for cutting the adhesive film, and the dicing tape on the laminate subjected to the dicing step so that a 90 ° peel strength between the cut adhesive film and the dicing tape is 0.4 N / 25 mm or less. A radiation irradiating step of irradiating radiation from the side, and the semiconductor separated into pieces from the dicing tape There is provided a method for manufacturing a semiconductor device, comprising: a pickup step of picking up a body chip to obtain a semiconductor chip with an adhesive film; and an adhesion step of adhering the semiconductor chip with an adhesive film to a semiconductor chip mounting support member.

  Here, the 90 ° peel strength means that a semiconductor wafer, an adhesive film, and a dicing tape are laminated in this order, and the dicing tape is a dicing tape portion having a radiation curable adhesive layer on the adhesive film side. Means the maximum value when the peel strength is measured by placing the dicing tape portion with a jig and pulling it up in the vertical (90 °) direction at 100 mm / min. (See 6 (a)).

  According to the method for manufacturing a semiconductor device of the present invention, by providing the above steps, it is possible to sufficiently suppress both chip jumps in the dicing process and chip cracks and pickup mistakes in the pickup process, and manufacture the semiconductor devices with a high yield. it can.

  In the method for manufacturing a semiconductor device according to the present invention, the laminate in the preparation step includes laminating an adhesive film on the glue layer side of a dicing tape having a radiation-curable glue layer, and the adhesive film and the dicing tape What is obtained by preparing an integrated film in which the adhesive layer is irradiated with radiation so that the 90 ° peel strength is 0.2 to 0.6 N / 25 mm, and attaching a semiconductor wafer to the adhesive film of the integrated film It is preferable that In this case, the adhesive film can be easily processed without being peeled off from the dicing tape during dicing.

  In the radiation irradiating step, it is preferable to irradiate radiation in a range where the semiconductor wafer of the stacked body is stacked. When the area of the adhesive film laminated on the dicing tape is larger than the semiconductor wafer, by performing radiation irradiation as described above, the adhesion between the dicing wafer ring and the dicing tape interface does not decrease, Dicing tape peeling from the wafer ring due to the cutting water pressure during dicing can be suppressed.

  The present invention also provides a semiconductor device obtained by the semiconductor device manufacturing method of the present invention.

  According to the present invention, a semiconductor device manufacturing method for manufacturing a semiconductor chip with an adhesive film and manufacturing a semiconductor device using the semiconductor chip, both of chip jumping in a dicing process, chip cracking in a pick-up process, and pick-up mistake Can be sufficiently suppressed, and a semiconductor device manufacturing method and a semiconductor device capable of manufacturing a semiconductor device with high yield can be provided.

FIG. 1A is a schematic cross-sectional view showing an embodiment of a laminate according to the present invention, and FIG. 1B is a schematic cross-sectional view showing an embodiment of an integrated film according to the present invention. It is. FIG. 2 is a schematic cross-sectional view for explaining an embodiment of a dicing process in the method for manufacturing a semiconductor device of the present invention. FIG. 3 is a schematic cross-sectional view for explaining one embodiment of a radiation irradiation step in the method for manufacturing a semiconductor device of the present invention. FIG. 4 is a schematic cross-sectional view for explaining an embodiment of a pickup process in the method for manufacturing a semiconductor device of the present invention. FIG. 5A is a schematic cross-sectional view showing an embodiment of the semiconductor device of the present invention, and FIG. 5B is a schematic cross-sectional view showing another embodiment of the semiconductor device of the present invention. . FIG. 6A is a schematic cross-sectional view for explaining the 90 ° peel strength measuring method according to the present invention, and FIG. 6B is a measurement obtained by measuring the 90 ° peel strength. It is an example of the measurement chart which shows the relationship between the distance (mm) from a start, and peel strength.

  Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings as necessary.

  In the method for manufacturing a semiconductor device of the present invention, a semiconductor wafer, an adhesive film, and a dicing tape are laminated in this order, the dicing tape has a radiation-curable paste layer on the adhesive film side, and the adhesive film and A preparation step of preparing a laminated body having a 90 ° peel strength of 0.2 to 0.6 N / 25 mm with the dicing tape, and dicing the laminated body from the semiconductor wafer side to divide the semiconductor wafer into semiconductor chips. A dicing step of cutting the adhesive film into pieces, and the laminate subjected to the dicing step so that a 90 ° peel strength between the cut adhesive film and the dicing tape is 0.4 N / 25 mm or less. Radiation irradiation step of irradiating radiation from the dicing tape side, and the individual pieces from the dicing tape A pickup step of picking up the formed semiconductor chip to obtain a semiconductor chip with an adhesive film, and an adhesion step of adhering the semiconductor chip with an adhesive film to a semiconductor chip mounting support member.

  Hereinafter, each process will be described in detail.

  FIG. 1 is a schematic cross-sectional view for explaining a preparation process according to the present invention. FIG. 1A is a schematic cross-sectional view showing an embodiment of a laminate according to the present invention. (B) is a schematic cross-sectional view showing an embodiment of an integrated film according to the present invention. In the laminate 100 shown in FIG. 1A, a semiconductor wafer 3, an adhesive film 1 and a dicing tape 2 are laminated in this order, and the dicing tape 2 has a radiation-curable adhesive layer 10 on the adhesive film 1 side. In addition, the adhesion between the adhesive film 1 and the dicing tape 2 is 0.2 to 0.6 N / 25 mm.

  As the adhesive film 1, a film containing a thermosetting resin and / or a thermoplastic resin can be used. As a thermosetting resin, an epoxy resin etc. are mentioned, for example. Examples of the thermoplastic resin include acrylic rubber and polyimide. In the present invention, it is preferable to use an adhesive film containing a thermosetting resin, acrylic rubber and filler. Such an adhesive film preferably further contains a curing agent and a curing accelerator of a thermosetting resin, a coupling agent, and the like. Examples of the filler include boron nitride and silica. Examples of the curing agent include phenol. Examples of the curing accelerator include 2PZ-CN (trade name, manufactured by Shikoku Chemical Co., Ltd.). Examples of the coupling agent include A-189 and A-1160 (manufactured by Nippon Unicar Co., Ltd., trade names).

  The adhesive film which concerns on this embodiment can be produced in the following procedures, for example. First, the varnish which melt | dissolved the adhesive composition containing the said component in the solvent is apply | coated on the polyester film which has mold release property, and it dries. The drying conditions are preferably 100 to 200 ° C./1 to 5 minutes, and are preferably set so that the amount of the adhesive protruding after pressure bonding at 160 ° C./2.0 MPa / 18 seconds is in the range of 150 to 1000 μm. Solvents are not particularly limited, but aromatic solvents such as toluene, xylene, chlorobenzene, ketones such as methyl ethyl ketone and methyl ethyl isobutyl ketone, aprotic polar solvents such as dimethylformamide, dimethylacetamide, and N methyl pyrodoline are used. be able to. These can be used alone or in combination.

  The thickness of the adhesive film is preferably from 1 to 100 μm, more preferably from 5 to 75 μm, from the viewpoints of filling properties of the substrate with wiring and semiconductor chip surface step and reliability (moisture absorption heat resistance).

  As the dicing tape 2, a tape provided with a base material and a radiation curable adhesive layer 10 provided on one surface of the base material can be used. The dicing tape can be used without particular limitation as long as it has a radiation curable adhesive layer. In the present invention, it is preferable to use a dicing tape having an ultraviolet curable adhesive layer. As such a dicing tape, a commercially available product such as an ultraviolet curable dicing tape (manufactured by Furukawa Electric Co., Ltd., trade name: UC-334 EP-110) can be used.

  In this embodiment, by irradiating the glue layer 10 of the dicing tape 2 with radiation at a predetermined time, the 90 ° peel strength of the adhesive film 1 and the dicing tape 2 can be within the predetermined range, and the dicing is performed. The 90 ° peel strength between the adhesive film and the dicing tape in the laminated body after the step can be set to the predetermined value or less.

  As the semiconductor wafer 3, a wafer composed of single crystal silicon, polycrystalline silicon, various ceramics, compound semiconductors such as gallium arsenide, and the like is used. In the present invention, a semiconductor wafer having a thickness of 10 to 100 μm can be used. According to the present invention, even when such an ultra-thin semiconductor wafer is used, a semiconductor chip with an adhesive film can be obtained while sufficiently suppressing chip skipping during dicing, chip cracking during pickup, and pickup mistakes. Can do.

  In the present embodiment, the order in which the semiconductor wafer 3, the adhesive film 1 and the dicing tape 2 are applied is not particularly limited. From the viewpoint of handling properties, the adhesive film 1 is first attached to the adhesive layer 10 side of the dicing tape 2. It is preferable to produce an integral film and attach the semiconductor wafer 3 to the adhesive film 1 of the integral film. In this case, in particular, as shown in FIG. 1 (b), the adhesive layer 1 of the integrated film 110 is irradiated with radiation in advance, and the 90 ° peel strength between the adhesive film 1 and the dicing tape 2 is 0.2. It is preferable to set it to -0.6N / 25mm. By taking such a procedure, the load on the semiconductor wafer 3 at the time of pasting can be completed only once, and the risk that the semiconductor wafer 3 breaks can be reduced. In the present embodiment, the radiation irradiation conditions are set so that the 90 ° peel strength between the adhesive film and the dicing tape falls within the above range.

  In the laminate 100, the 90 ° peel strength between the adhesive film 1 and the dicing tape 2 is 0.2 to 0.6 N / 25 mm. By making the 90 ° peel strength in such a range, the 90 ° peel strength between the adhesive film and the dicing tape cut in the laminated body after the dicing step is sufficiently maintained while maintaining the chip jump suppressing effect in the dicing step. It can reduce more reliably. Thereby, pickup property can be further improved.

  In the integrated film shown in FIG. 1B, the 90 ° peel strength is controlled by irradiating the glue layer 10 of the dicing tape 2 with radiation from the dicing tape side. Radiation can also be irradiated. In addition, when an adhesive film is provided on a base material having radiation transparency and this is bonded to a dicing tape to produce an integrated film, radiation may be applied to the integrated film having the base material. Good. Further, after the semiconductor wafer 3, the adhesive film 1 and the dicing tape 2 are bonded together, radiation irradiation may be performed.

  Irradiation for making the 90 ° peel strength between the adhesive film 1 and the dicing tape 2 in the range of 0.2 to 0.6 N / 25 mm can be performed in a plurality of times before the dicing step. From the viewpoint of reducing the complexity of the work process, it is preferable to adjust the 90 ° peel strength by performing one-time radiation irradiation on the integrated film.

  As the type of radiation, any material that cures the adhesive layer 10 of the dicing tape 2 may be used, and ultraviolet rays (wavelength: 200 to 400 nm) are preferable from the viewpoint of handleability.

  Although the integrated light quantity of the irradiated radiation depends on the composition of the adhesive film 1 and the composition of the adhesive layer 10, it can be appropriately adjusted so that the 90 ° peel strength is within the above range.

  FIG. 2 is a schematic cross-sectional view for explaining an embodiment of the dicing process. In the dicing process according to the present embodiment, the dicing tape 2 is fixed to the dicing ring 4 and the dicing tape 2 is left on the dicing tape 2 by using a cutting device such as a dicing blade 5 so as to leave a part of the dicing tape 2 from the semiconductor wafer 3 side. The semiconductor wafer 3 and the adhesive film 1 are cut by making a cut. Thus, the semiconductor wafer 3 is separated into a plurality of semiconductor chips 3a, and the adhesive film 1 becomes an adhesive film 1a cut to the same size as the semiconductor chip 3a.

  1-50 micrometers is preferable, as for the cutting depth to a dicing tape, 5-40 micrometers is more preferable, and 10-30 micrometers is more preferable. By making such a cutting depth, effects such as suppression of uncut adhesive film and dicing tape breakage during expansion can be obtained, and the manufacturing yield of semiconductor devices can be improved.

  As a cutting device, a commercially available dicer or blade can be used. As the dicer, for example, a full automatic dicing saw 6000 series and a semi-automatic dicing saw 3000 series manufactured by DISCO Corporation can be used. As the blade, a dicing blade NBC-ZH05 series, NBC-ZH series, etc. manufactured by DISCO Corporation can be used. Further, for example, the semiconductor wafer 3 may be cut using a laser such as a full automatic laser saw 7000 series manufactured by DISCO Corporation.

  In the present embodiment, the adhesive film 1 may be disposed on either the circuit forming surface side or the back surface side of the semiconductor wafer 3. In addition, when the adhesive film 1 is disposed on the circuit forming surface side of the semiconductor wafer 3, dicing is performed from the back surface side of the semiconductor wafer 3, but by using a dicer equipped with an IR camera, cutting is performed from the back surface of the semiconductor wafer. The position to be recognized can be recognized.

  FIG. 3 is a schematic cross-sectional view for explaining an embodiment of the radiation irradiation process. In the radiation irradiation process according to the present embodiment, the dicing tape 2 side from the dicing tape 2 side so that the 90 ° peel strength between the cut adhesive film 1a and the dicing tape 2 is 0.4 N / 25 mm or less. Irradiate radiation.

  Here, the 90 ° peel strength means that the laminate is placed horizontally so that the dicing tape portion faces upward, the dicing tape portion is held with a jig, and the vertical (90 °) direction is 100 mm / min. Means the maximum value when the peel strength is measured (see FIG. 6).

  For the installation of the laminated body, a double-sided tape or the like (for example, product name: NWBB-10, manufactured by Nichiban) is attached to the semiconductor wafer side, and then a fixing member for a slide glass or the like (for example, product name: S1225 manufactured by MATSANAMI). The method of sticking and fixing is preferable. For measuring the 90 ° peel strength, a commercially available strograph such as Strograph ES (trade name) manufactured by TOYOSEIKI can be used.

  In the present embodiment, the radiation irradiation conditions are set so that the 90 ° peel strength between the cut adhesive film 1a and the dicing tape 2 is in the above range. This condition is based on, for example, preparing a plurality of samples with different radiation doses in advance, measuring the 90 ° peel strength for the samples, and obtaining the relationship between the obtained radiation dose and 90 ° peel strength. Can be set.

  When radiation is applied to the glue layer of the dicing tape of the laminate that has undergone the dicing process, a maximum peel strength is observed at the dicing line as shown in FIG. 6 (b). The present inventors consider that when this value exceeds a predetermined value, the pick-up property of the semiconductor chip becomes insufficient. As this factor, the following three hypotheses can be considered. On the dicing line 11, a mixture 13 composed of a semiconductor (for example, silicon) scraped by dicing, an adhesive film, a glue layer of a dicing tape, and a base material is deposited. As the contribution of this deposit, (1) the deposit is cured by irradiation, (2) the deposit is exposed to oxygen in the air, and curing does not occur sufficiently even when irradiated with radiation. It is conceivable that stickiness is developed. Further, as factors other than the deposit, (3) it is considered that the radiation irradiation efficiency to the glue layer of the dicing tape is lowered because it is difficult to obtain radiation reflection by silicon near the dicing line.

  In the present embodiment, the peel strength between the cut adhesive film and the dicing tape was measured while suppressing chip skipping during dicing by a combination of radiation irradiation before dicing and radiation irradiation in the radiation irradiation step. The maximum value in the range including the current dicing line is set to 0.4 N / 25 mm or less, and a good pickup property is realized.

  The type of radiation used in the radiation irradiation step is not particularly limited as long as the adhesive layer 10 of the dicing tape 2 is cured, and ultraviolet rays (wavelength 200 to 400 nm) are preferable from the viewpoint of handleability.

The illuminance and integrated light quantity of the irradiated radiation depend on the composition of the adhesive film 1 and the composition of the adhesive layer 10 and the illuminance and integrated light quantity of the irradiated radiation when adjusting the 90 ° peel strength before dicing. illuminance is preferably ^{1~500mW / cm 2, 5~100mW / cm} 2 is more preferable. Further, the integrated amount of radiation can be adjusted as appropriate so that the 90 ° peel strength after dicing falls within the above range.

  In the present embodiment, from the viewpoint of unifying the speed at which curing proceeds by radiation, the illuminance of radiation applied when adjusting the 90 ° peel intensity before dicing, the integrated light amount, and the 90 ° peel after dicing. It is preferable that the illuminance of the radiation applied when adjusting the intensity and the integrated light amount are the same.

  Further, in the radiation irradiation process according to the present embodiment, as shown in FIG. 3, the range S in which the laminated semiconductor wafers 3 that have undergone the dicing process are laminated (the dicing tape 2 and the semiconductor wafers 3 in the laminating direction). It is preferable to irradiate the radiation in a range in which both overlap when projected. By limiting the irradiation range in this way, the pickup process can be performed while maintaining the adhesion between the dicing ring 4 and the dicing tape 2. Since the area where the adhesive film 1 is affixed is usually larger than the semiconductor wafer 3, intentionally irradiating only the substantially same area as the semiconductor wafer 3, and maintaining a high adhesive force around it, It is possible to suppress chip skipping during dicing.

  FIG. 4 is a schematic cross-sectional view for explaining an embodiment of the pickup process. In the pick-up process according to the present embodiment, the part having the semiconductor chip to be picked up on the lower side of the expanded dicing tape 2 is pushed up by the push-up needle 6, and the semiconductor chip 3a separated by the pick-up collet and the semiconductor chip A semiconductor chip 12 with an adhesive film comprising the adhesive film 1a cut to the same size as 3a is picked up in the stacking direction of the laminate.

  The pick-up process can use a pick-up die bonder generally marketed. For example, Renesas East Japan Semiconductor's flexible die bonder DB-730 or DB-700, Shinkawa's die bonder SPA-300, SPA-400, or the like can be used.

  The expansion is performed by inserting an expanding ring from the upper surface or the lower surface side of the dicing ring 4. The expanding amount of the dicing tape 2 can be adjusted by the difference in height between the dicing ring 4 and the expanding ring. When the height difference between the dicing ring 4 and the expanding ring is the expanding amount, and the inserting speed of the expanding ring is the expanding speed, the expanding amount is preferably 2 to 15 mm, more preferably 3 to 12 mm, and the expanding speed is 1-100 mm / sec is preferable, and 3-50 mm / sec is more preferable.

  As the pick-up method used in the above process, a method developed for thin-walled chips such as a multi-core push-up method, a three-step push-up method by Renesas East Japan Semiconductor, and a slide method from Canon Machinery is preferable.

  As a condition for pushing up the pin, the push-up height is preferably 600 μm or less at the maximum, more preferably 500 μm or less, and further preferably 350 μm or less. The speed at which the pin is pushed up is preferably from 0.1 to 100 mm / second, more preferably from 1 to 75 mm / second, and even more preferably from 5 to 50 mm / second.

  In the bonding step, the semiconductor chip 12 with the adhesive film obtained above is bonded to the semiconductor chip mounting support member 7.

  Examples of the semiconductor chip mounting support member include other semiconductor chips, lead frames such as 42 alloy lead frames and copper lead frames, resin films formed from epoxy resins, polyimide resins, maleimide resins, and the like, glass nonwoven fabrics, or the like Examples thereof include substrates obtained by impregnating a glass woven fabric with a thermosetting resin such as an epoxy resin, a polyimide resin, and a maleimide resin and curing the resin, and ceramic substrates such as a glass substrate and alumina.

  FIG. 5A is a schematic cross-sectional view showing an embodiment of a semiconductor device obtained by the method according to the present invention. A semiconductor device 200 shown in FIG. 5A includes a semiconductor chip mounting support member 7 and a semiconductor chip 3a bonded to the semiconductor chip mounting support member 7 through an adhesive film 1a. The semiconductor chip 3 a is connected to the wiring of the semiconductor chip mounting support member 7 by bonding wires 8. The semiconductor chip 3a is sealed with a sealing resin 9 in which these are embedded.

  FIG. 5B is a schematic cross-sectional view showing another embodiment of the semiconductor device obtained by the method according to the present invention. In addition to the configuration of the semiconductor device 200, the semiconductor device 210 shown in FIG. 5B includes another semiconductor chip 3a bonded to the semiconductor chip 3a via the adhesive film 1a, and the semiconductor chip 3a and the semiconductor chip. A bonding wire 8 for connecting the wiring of the mounting support member 7 is further provided. The semiconductor device 210 has a structure in which semiconductor chips are stacked in two stages, but may have a multi-stage chip stack structure in which three or more semiconductor chips are stacked.

  In the semiconductor device according to the present invention, the adhesion between the semiconductor chip and the support member may be performed, for example, under the condition that the semiconductor chip with an adhesive film and the support member are heated at 50 to 180 ° C. for 0.1 to 5 seconds. preferable.

  In the case where the semiconductor adhesive film 5 contains a thermosetting resin, the bonded semiconductor chip is heated to promote adhesion and curing of the semiconductor adhesive film to the adherend, thereby increasing the strength of the joint. Is preferred. The heating at this time may be appropriately adjusted according to the composition of the adhesive film, and is usually 60 to 220 ° C. and 0.1 to 600 minutes. When performing resin sealing, you may utilize the heating of the hardening process of sealing resin.

  EXAMPLES Hereinafter, although an Example demonstrates this invention in detail, this invention is not restrict | limited to these.

<Preparation of adhesive film>
An adhesive film was prepared by the following procedure. First, the raw material shown in the following Table 1 was blended to prepare an adhesive composition, which was dissolved in N-methylpyrodoline to obtain a varnish. This varnish was applied onto a polyester film having a releasability having a thickness of 50 μm and dried. Drying conditions were set to 180 ° C./3 minutes, and the adhesive protrusion amount after pressure bonding at 160 ° C./2.0 MPa / 18 seconds was set to be in the range of 150 to 300 μm. Thus, an adhesive film having a thickness of 25 μm was formed on the polyester film.

Example 1
The adhesive film obtained above was cut into a circle having a diameter of 210 mm, and this was cut on a UV curable dicing tape (Furukawa Electric Co., Ltd., trade name: UC-334 EP-110), DM-300-H (Co., Ltd.) Bonding was performed at room temperature (25 ° C.) using a product name (manufactured by JCM) to obtain an integrated film having a laminated structure of an adhesive film / dicing tape. In addition, bonding was performed so that the adhesive film of the state provided on the polyester film and the adhesive layer of a dicing tape were bonded together.

From the dicing tape side of the integrated film obtained above, an ultraviolet ray with an integrated light amount of 200 mJ / cm ² was irradiated. Next, the polyester film of the integrated film irradiated with ultraviolet rays is peeled to expose the adhesive film, and a 50 μm thick semiconductor wafer (single crystal silicon) is laminated on the hot plate on the adhesive film, and the semiconductor wafer / adhesive film / A laminated body in which dicing tapes were laminated in this order was obtained. The surface temperature of the hot plate during lamination was set to 80 ° C.

  Next, the laminate obtained above was cut using a fully automatic dicer DFD-6361 (trade name) manufactured by DISCO Corporation. The cutting is a single cut method in which processing is completed with one blade. A dicing blade NBC-ZH104F-SE 27HDBB (trade name) manufactured by DISCO Corporation is used as the blade, the blade rotation speed is 45,000 rpm, and the cutting speed is 50 mm. / S. The blade height at the time of cutting was set to cut a dicing tape by 30 μm (setting value is 80 μm), and the size for cutting the semiconductor wafer was 10 × 10 mm.

Whether or not peeling (chip jump) occurred at the interface between the adhesive film and the dicing tape during the dicing was confirmed. A case where peeling (chip jumping) occurred was judged as defective (x), and a case where peeling did not occur was judged good (◯). In addition, the 90 ° peel strength between the adhesive film and the dicing tape was measured by the following method for the integrated film obtained after the ultraviolet irradiation obtained in the same manner as described above. First, an adhesive film of an integral film and 400 μm thick silicon were laminated. The laminating temperature was 80 ° C. The integrated film was cut into a width of 10 mm with a cutter from the dicing tape side to obtain a peel measurement sample.
The peel strength was measured by the following procedure using a Strograph ES (trade name) manufactured by TOYOSEIKI. Place the above sample for peel strength measurement horizontally, hold the dicing tape part without the measurement sample chip with a jig and pull it up in the vertical (90 °) direction at 100 mm / min. The strength was measured. The maximum value in the measurement chart was the 90 ° peel strength of the peel strength measurement sample. The obtained results are shown in Tables 2 and 3.

The laminated body after dicing was again irradiated with ultraviolet rays having an integrated light amount of 200 mJ / cm ² from the dicing tape side, and a sample for evaluating pick-up property was produced.

(Example 2)
A sample for evaluating pick-up property was produced in the same manner as in Example 1 except that the ultraviolet irradiation condition for the integral film was changed to an integrated light quantity of 100 mJ / cm ² . Note that no chip jump occurred during dicing. Table 2 shows the 90 ° peel strength between the adhesive film and the dicing tape for the integrated film after UV irradiation.

(Example 3)
A sample for evaluating pick-up property was produced in the same manner as in Example 1 except that the ultraviolet irradiation condition for the laminate after dicing was changed to an integrated light amount of 100 mJ / cm ² . Note that no chip jump occurred during dicing. Table 2 shows the 90 ° peel strength between the adhesive film and the dicing tape for the integrated film after UV irradiation.

(Comparative Example 1)
A sample for evaluating pick-up property was prepared in the same manner as in Example 1 except that the integral film was not irradiated with ultraviolet rays. Note that no chip jump occurred during dicing. Table 3 shows the 90 ° peel strength between the adhesive film and the dicing tape for the integrated film after UV irradiation.

(Comparative Example 2)
A sample for evaluating pick-up property was produced in the same manner as in Example 1 except that the laminated body after dicing was not irradiated with ultraviolet rays. Note that no chip jump occurred during dicing. Table 3 shows the 90 ° peel strength between the adhesive film and the dicing tape for the integrated film after UV irradiation.

(Comparative Example 3)
A sample for evaluating pick-up property was produced in the same manner as in Example 1 except that the integrated film was not irradiated with ultraviolet rays and the laminated body after dicing was not irradiated with ultraviolet rays. Note that no chip jump occurred during dicing. Table 3 shows the 90 ° peel strength between the adhesive film and the dicing tape for the integrated film after UV irradiation.

(Comparative Example 4)
A sample for evaluating pick-up property was produced in the same manner as in Example 1 except that the condition for irradiating the integrated film with ultraviolet rays was changed to an integrated light amount of 500 mJ / cm ² , and chip fly occurred during dicing. Table 3 shows the 90 ° peel strength between the adhesive film and the dicing tape for the integrated film after UV irradiation.

(Comparative Example 5)
A sample for evaluating pick-up property was produced in the same manner as in Example 1 except that the integral film was not irradiated with ultraviolet light, and the ultraviolet irradiation condition for the laminated body after dicing was changed to an integrated light amount of 300 mJ / cm ² . Note that no chip jump occurred during dicing. Table 3 shows the 90 ° peel strength between the adhesive film and the dicing tape for the integrated film after UV irradiation.

<Evaluation of pickup property>
From the sample for evaluation of pick-up property obtained above, a semiconductor chip with an adhesive film was picked up using a flexible die bonder DB-730 (trade name) manufactured by Renesas East Japan Semiconductor, and the pick-up property was evaluated. The pickup collet is RUBBER TIP 13-087E-33 (trade name, size: 10 × 10 mm) manufactured by Micromechanics, and the push-up pin is EJECTOR NEEDLE SEN2-83-05 (trade name) manufactured by Micromechanics. , Diameter: 0.7 mm, tip shape: semicircle with a diameter of 350 μm). The push-up pins were arranged at 9 pins with a pin center interval of 4.2 mm, and the pick-up property was evaluated under the conditions of the pin push-up speed during pick-up: 10 mm / s and the push-up height: 500 μm. When 100 consecutive chips were picked up and chip cracks, pickup mistakes, etc. did not occur, the case was good (◯). The results are shown in Tables 2 and 3.

<Measurement of 90 ° peel strength>
Each sample for evaluation of pickup property obtained in the same manner as above was cut out to 10 × 90 mm, and a sample with 6 chips attached to a dicing tape was produced. A double-sided tape (manufactured by Nichiban, trade name: NWBB-10) was cut to 9 × 58 mm and pasted on the chip of the above sample cut out on one side. And the other surface of the double-sided tape was attached to a slide glass (manufactured by MATUNAMI, trade name: S1225), and this was used as a sample for peel strength measurement.

  The peel strength was measured by the following procedure using a Strograph ES (trade name) manufactured by TOYOSEIKI. Place the above sample for peel strength measurement horizontally, hold the dicing tape part without the measurement sample chip with a jig and pull it up in the vertical (90 °) direction at 100 mm / min. The strength was measured (see (a) of FIG. 6). FIG. 6B is an example of a measurement chart showing the relationship between the distance (mm) from the start of measurement and the peel strength obtained by measuring the 90 ° peel strength. The maximum value in the measurement chart (for example, M1 in FIG. 6B) was set as the 90 ° peel strength of the peel strength measurement sample. The obtained results are shown in Tables 2 and 3.

  As shown in Table 2, by performing radiation irradiation to the dicing tape before and after dicing, the 90 ° peel strength before and after the dicing process can be adjusted to a predetermined range, It was confirmed that both chip cracking and pickup mistakes in the pickup process can be sufficiently suppressed.

  According to the method for manufacturing a semiconductor device of the present invention, the semiconductor device can be manufactured with a high yield.

  DESCRIPTION OF SYMBOLS 1 ... Adhesive film, 1a ... Cut adhesive film, 2 ... Dicing tape, 3 ... Semiconductor wafer, 3a ... Semiconductor chip, 4 ... Dicing ring, 5 ... Dicing blade, 6 ... Push-up needle, 7 ... Support for mounting semiconductor chip Member: 8 ... Bonding wire, 9 ... Sealing resin, 10 ... Adhesive layer, 11 ... Dicing line, 12 ... Semiconductor chip with adhesive film, 13 ... Deposit, 100 ... Laminate, 110 ... Integrated film, 200, 210 ... Semiconductor device.

Claims (4)

A semiconductor wafer, an adhesive film, and a dicing tape are laminated in this order, the dicing tape has a radiation-curable adhesive layer on the adhesive film side, and 90 ° peel strength between the adhesive film and the dicing tape is A preparation step of preparing a laminate that is 0.2 to 0.6 N / 25 mm;
A dicing step of dicing the laminate from the semiconductor wafer side to divide the semiconductor wafer into semiconductor chips and cut the adhesive film;
A radiation irradiating step of irradiating the laminated body that has undergone the dicing step from the dicing tape side so that a 90 ° peel strength between the cut adhesive film and the dicing tape is 0.4 N / 25 mm or less; ,
A pickup step of picking up the separated semiconductor chip from the dicing tape to obtain a semiconductor chip with an adhesive film;
An adhesion step of adhering the semiconductor chip with the adhesive film to a semiconductor chip mounting support member;
A method for manufacturing a semiconductor device. The laminate in the preparation step is
An adhesive film is laminated on the adhesive layer side of the dicing tape having a radiation curable adhesive layer, and the 90 ° peel strength between the adhesive film and the dicing tape is 0.2 to 0.6 N / 25 mm. Preparing an integrated film irradiated with radiation on the adhesive layer, and obtained by attaching a semiconductor wafer to the adhesive film of the integrated film,
A method for manufacturing a semiconductor device according to claim 1.   3. The method of manufacturing a semiconductor device according to claim 1, wherein, in the radiation irradiating step, radiation is applied to a range where the semiconductor wafer of the stacked body is stacked.   The semiconductor device obtained by the manufacturing method of the semiconductor device as described in any one of Claims 1-3.

Images