JP2010245373A - Semiconductor device and method of manufacturing the same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which is highly reliable and securely has superior heat dissipation without being influenced by a difference in height of mounted component. <P>SOLUTION: On a semiconductor element 12 mounted facedown on a wiring board 11, a metal bent structure 14 provided with an upper portion 17, an intermediate portion 18, a lower portion 19, etc., by bending and so on one metal plate at a cutting part, an end part, and a dotted line is set together with other electronic components, and sealed with a sealing resin body 13 together with the semiconductor element 12 etc., so that the semiconductor element 12 is efficiently cooled by the metal bent structure 14 without being influenced by variance in thickness of the semiconductor element 12 etc. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

  The present invention relates to a module type semiconductor device used for a wireless LAN and a digital portable terminal, and a manufacturing method thereof.

  2. Description of the Related Art Conventionally, a semiconductor device in which semiconductors and electronic components are mounted on a wiring board with high density and covered with a sealing resin has been used (for example, Patent Document 1).

  However, as these electronic devices are reduced in size and increased in density, heat dissipation in a semiconductor or the like may become a problem.

  For example, Patent Document 2 proposes a heat dissipation structure for a semiconductor device. FIG. 8 is a cross-sectional view illustrating an example of a conventional heat dissipation structure of a semiconductor device. In FIG. 8, a heat conducting elastic body 2 is inserted between the semiconductor element 3 and the metal plate 1. The heat generated in the semiconductor element 3 is transmitted to the metal plate 1 through the heat conducting elastic body 2 and is radiated. The semiconductor element 3 is mounted together with other electronic components on a wiring board (not shown) at a high density, and the thermal conductive elastic body 2 and the metal plate 1 are covered with a sealing resin, thereby providing sufficient mechanical strength. Can be obtained.

  Thus, by inserting a heat conducting elastic body between the semiconductor where heat generation is a problem and the metal plate serving as the heat radiating plate, it is possible to effectively absorb dimensional variations and the like of each part.

  However, since the conventional heat conductive elastic body is a resin member having flexibility, which is filled with a ceramic filler having high heat conductivity, the heat conductivity is low, and the heat dissipation effect is limited.

JP 2005-39007 A JP 2002-353388 A

  Therefore, the present invention uses a metal bent structure having a higher thermal conductivity than a heat conductive elastic body obtained by adding a ceramic filler having a high thermal conductivity to a conventional resin member having flexibility. It is an object of the present invention to provide a semiconductor device with better heat dissipation and a method for manufacturing the same.

  In order to achieve the above object, a wiring board, a semiconductor element mounted face-down on the wiring board, a metal bent structure placed on the semiconductor element, and the wiring on the wiring board A semiconductor device comprising a sealing resin body covering a substrate, the semiconductor element, and the metal bent structure, wherein the metal bent structure is a semiconductor device in which a metal plate is bent. .

  With the above configuration, the semiconductor device of the present invention has high thermal conductivity to a conventional flexible resin member without being affected by dimensional variation when mounting a heat-generating component such as a semiconductor incorporated in a sealing resin body. The heat radiation effect can be enhanced more than the heat conductive elastic body formed by adding a ceramic filler or the like.

  Further, if necessary, by providing a burr or the like at the peripheral edge of the metal bent structure, the adhesion strength between the sealing resin body and the metal structure can be increased without affecting the semiconductor element or the like. .

(A) is sectional drawing of the semiconductor device in Embodiment 1 of this invention, (B) is sectional drawing explaining the heat conduction mechanism of the semiconductor device in Embodiment 1 of this invention. (A) is a sectional view of a semiconductor device incorporating an electronic component, and (B) is a partial sectional view of a semiconductor device incorporating an electronic component. (A) is sectional drawing explaining the semiconductor device of this invention, (B) (C) is sectional drawing explaining both the conventional semiconductor devices (A) is a perspective view which shows the shape of a metal bending structure, (B) (C) is a top view of both metal bending structures (A)-(C) is sectional drawing explaining the followability | trackability of a metal bending structure together FIGS. 4A to 4E are cross-sectional views illustrating a state in which a plurality of semiconductor devices are manufactured collectively. Sectional drawing explaining the other structure of a metal bending structure Sectional drawing explaining an example of the heat dissipation structure of the conventional semiconductor device

(Embodiment 1)
Hereinafter, the semiconductor device according to the first embodiment will be described with reference to the drawings. 1A is a cross-sectional view of the semiconductor device according to the first embodiment of the present invention, and FIG. 1B is a cross-sectional view illustrating a heat conduction mechanism of the semiconductor device according to the first embodiment of the present invention.

  In FIGS. 1A and 1B, reference numeral 11 denotes a wiring board. As the wiring substrate 11, a ceramic substrate or a glass epoxy resin substrate obtained by impregnating glass fiber with an epoxy resin or the like can be used. As the ceramic substrate and the glass epoxy resin substrate, commercially available multilayer substrates (those using via electrodes or the like for interlayer connection) can be used. 12 is a semiconductor element, 13 is a sealing resin body, 14 is a metal bent structure, and the metal bent structure 14 is formed by bending a metal plate into a predetermined shape. 15 is a bump and 16 is an external terminal. The semiconductor element 12 is mounted on one surface of the wiring board 11 using bumps 15 and the like, and is sealed with a sealing resin body 13 together with other electronic components (not shown). Reference numeral 16 denotes an external terminal, which is formed on the other surface of the wiring substrate 11 (for example, the surface on which the semiconductor element 12 and the sealing resin body 13 are not formed).

  Reference numeral 17 denotes an upper part, 18 denotes an intermediate part, and 19 denotes a lower part, and each constitutes a metal bent structure 14.

  Reference numeral 20 denotes a semiconductor device. The semiconductor device 20 includes at least a wiring board 11, a semiconductor element 12 face-down mounted on the wiring board 11, and a metal bent structure placed on the semiconductor element 12. 14, and a sealing resin body 13 that covers the wiring substrate 11, the semiconductor element 12, and the metal bent structure 14 on the wiring substrate 11.

  Reference numeral 21 denotes a burr, for example, a burr generated when a metal plate is punched into a predetermined shape using a mold or laser-cut (also referred to as dross or the like in the case of laser cutting). is there. The burr 21 is provided at the peripheral edge of the metal bent structure 14 (or a portion punched into a predetermined shape or a punched surface), and the burr 21 is formed so as to face the inside of the metal bent structure 14. is doing. Here, the inside of the metal bent structure 14 is, for example, the intermediate portion 18 side in the upper portion 17 of the metal bent structure 14. Similarly, the lower portion 19 side of the metal bent structure 14 is the intermediate portion 18 side. When the metal bent structure 14 is composed of, for example, an upper portion 17 and a lower portion 19 and there is no intermediate portion 18 (or the intermediate portion 18 also serves as the lower portion 19 or the upper portion 17), the upper portion 17 is the lower portion 19 side. Thus, the contact between the lower portion 19 and the semiconductor element 12 can be stabilized by setting the direction of the burr 21 to the inside of the metal bent structure 14. When the sealing resin body 13 is formed in a predetermined shape using a mold or the like, the contact between the mold and the upper portion 17 can be stabilized, and the molding accuracy of the sealing resin body 13 is increased.

  An arrow 22 in FIG. 1B indicates a state in which heat generated in the semiconductor element 12 is transmitted to the outside through the metal bent structure 14. As shown in FIG. 1B, since the burr 21 is not provided on the semiconductor element 12 side of the lower portion 19 of the metal bent structure 14, an effect of increasing the contact area of these members can be obtained. Further, the burr 21 provides an anchor effect between the metal bent structure 14 and the sealing resin body 13.

  As indicated by an arrow 22, the heat generated in the semiconductor element 12 is transmitted from the lower part 19 to the upper part 17 via the intermediate part 18 and is released to the outside of the semiconductor device 20.

  In addition, the lower part 19, the intermediate part 18, and the upper part 17 which comprise the metal bending structure 14 are mutually formed by bending one metal plate into a predetermined shape (or a single sheet structure). The heat conduction efficiency between them can be increased.

  Next, a case where an electronic component is incorporated in a part of the semiconductor device 20 will be described with reference to FIGS. 2A is a cross-sectional view of a semiconductor device incorporating an electronic component, and FIG. 2B is a partial cross-sectional view of the semiconductor device incorporating an electronic component.

  2A and 2B, reference numeral 23 denotes an electronic component, such as a multilayer ceramic capacitor, a square chip resistor, or a chip inductor.

  As shown in FIG. 2A, the size of the lower portion 19 of the metal bent structure 14 may be matched to the semiconductor element 12 and the size of the upper portion 17 may be approximately the same as the ceiling surface of the semiconductor device 20. . By doing so, the heat dissipation effect from the upper part 17 can be enhanced.

  In FIG. 2B, reference numeral 24 denotes a window, which is an opening formed in the upper portion 17 of the metal bent structure 14. Note that one or more sides of the window 24 may be open (that is, a notch structure or a U-shape). In addition, the state which made the window 24 the notch structure provided in the peripheral part of the upper part 17 is not shown in figure.

  For example, when it is not desired to transmit heat to the electronic component 23, the heat conduction to the electronic component 23 is suppressed by forming a window 24 in the upper portion 17 in the vicinity of the electronic component 23 as shown in FIG. I can do it.

  Further, when the sealing resin body 13 is formed of a transparent resin or the like, when the electronic component 23 is a light receiving element (for example, a light sensor or a CCD element), a window 24 is formed in the upper portion 17 so that a semiconductor is formed. Light from the device 20 can be efficiently delivered to the electronic component 23.

  Further, when the electronic component 23 built in the semiconductor device 20 is an antenna, the reception or transmission efficiency of electromagnetic waves through the window 24 formed in the upper portion 17 can be increased.

  Next, a case where a plurality of semiconductor elements 12 having different thicknesses are built in one semiconductor device 20 will be described with reference to FIGS. The plurality of semiconductor elements 12 having different thicknesses need not be limited to the semiconductor elements 12, and may be members that generate heat, such as an electronic component 23.

  3A is a cross-sectional view illustrating a semiconductor device of the present invention, and FIGS. 3B and 3C are cross-sectional views illustrating a conventional semiconductor device.

  As shown in FIG. 3A, by using the metal bent structure 14, a plurality of semiconductor elements 12 having different heights can be cooled by one metal bent structure 14. The cost can be reduced by 20.

  Further, as shown in FIG. 3A, by using one metal bent structure 14, a plurality of semiconductor elements 12 having different heights can be aligned at substantially the same temperature, and the circuit operation can be stabilized. Can be realized. In this case, it is not necessary to expose the upper portion 17 which is one end of the metal bent structure 14 from the sealing resin body 13.

  3B and 3C are cross-sectional views illustrating problems in a conventional semiconductor device. 3B and 3C, 25a and 25b are conventional semiconductor devices, and 26a to 26d are heat radiators. As shown in FIGS. 3B and 3C, when the semiconductor elements 12c to 12f having different thicknesses are radiated, it is necessary to prepare the radiators 26a to 26d having different thicknesses in accordance with the thicknesses. However, the thickness variation includes not only the semiconductor elements 12c to 12f but also the mounting portion (for example, the thickness and thickness variation of the bump 15), the thickness variation of the wiring substrate 11, and the presence or absence of warping, etc. Molding variations as indicated by arrows 22 may occur, and the heat dissipation may be reduced.

(Embodiment 2)
Hereinafter, as the second embodiment, the shape of the metal bent structure 14 described in the first embodiment will be described.

  4A is a perspective view showing the shape of the metal bent structure 14, and FIGS. 4B and 4C are plan views of the metal bent structure 14. FIG.

4A to 4C, 27 is a metal plate, and 28a and 28b are cutting parts. Reference numerals 29a and 29b denote end portions, and the end portions 29a and 29b are circular (or circular notches provided in part) ends, thereby improving the bending property and suppressing the stress concentration. It is done. The cutting portions 28a and 28b are formed by punching with a mold (including a punching press) or cutting with a CO ₂ laser or the like. Dotted lines 30a and 30b indicate bent portions. For example, when the metal bent structure 14 is manufactured from the metal plate 27 using a mold, the manufacturing of the cutting portions 28a and 28b and the bending along the dotted lines 30a and 30b are performed simultaneously (or in a series of operations). By doing so, productivity can be improved.

  4A, the metal bent structure 14 is obtained by bending the metal plate 27 shown in FIG. 4B at a position indicated by a dotted line 30a. Note that the burr 21 in FIG. 4A is a burr generated when the metal plate 27 is punched with a mold, a dross generated when the metal plate 27 is cut into a predetermined shape with a laser, or the like. Thus, by leaving the burrs 21 on the peripheral edge of the metal bent structure 14 or the like, the adhesion between the sealing resin body 13 and the metal bent structure 14 can be enhanced.

  FIG. 4C is a top view illustrating the metal bent structure 14 in which the intermediate portion 18b is spiral. By bending the metal bent structure 14 shown in FIG. 4C at the position indicated by the dotted line 30b, the metal bent structure 14 with high dimensional accuracy can be manufactured in large quantities at a low cost.

  In addition, as for the clearance in the cutting parts 28a and 28b in FIG. 4 (B) (C), 0.2 mm or less is desirable. If the clearance exceeds 0.2 mm, the burr 21 may be formed. The clearance may be zero (or substantially zero). By setting the clearance to substantially zero, the burr 21 can be positively formed at a predetermined position in the cut portions 28a and 28b.

  In FIG. 4A, the metal bent structure 14 may be turned upside down. That is, instead of the lower portion 19 a in contact with the semiconductor element 12, the upper portion 17 a may be set on the top surface of the semiconductor element 12. That is, (area of the upper portion 17)> (area of the lower portion 19) or (area of the upper portion 17) <(area of the lower portion 19) may be set.

  This is because the metal bent structure 14 in the present invention functions as a kind of “heat transfer high-speed line, heat transport high-speed road, or kind of heat spreader” for transferring heat generated in the semiconductor element 12 to the outside. Because. That is, in FIG. 4A, the metal bent structure 14 is turned upside down, and a forced cooling device (for example, a chilled water circulation device) is placed on the lower portion 19 exposed on the surface of the semiconductor device 20 (not shown in FIG. 4). Etc.) may be attached. By attaching a cooling device that actively cools in this way, heat generated in the semiconductor element 12 can be efficiently released to the outside. This is because the metal bent structure 14 is formed of a material having high thermal conductivity such as aluminum or copper, and the metal bent structure 14 (for example, the lower portion 19) in surface contact with the semiconductor element 12 is formed. The transferred heat is efficiently passed through the intermediate portion 18 to the metal bent structure 14 (for example, the upper portion 17) in surface contact with the cooling device (in other words, at high speed, large capacity, or like a kind of heat pipe). To heat transfer.

  An example of the semiconductor device 20 of the present invention is a CPU module. In addition, there are a semiconductor module and a GPU module (GPU means a graphics CPU).

  Further, the semiconductor device 20 includes a micro power source and the like. That is, a conventional notebook personal computer or the like is supplied with power from an AC outlet via a box-shaped AC-DC converter of several centimeters square. However, by using the semiconductor device 20 of the present invention, such an AC-DC converter can be miniaturized. That is, the outlet portion (or outlet cap portion) to be plugged into the AC outlet can be used as it is as an AC-DC converter, and the device can be reduced in size and weight. When the semiconductor device 20 is an ultra-small power source, members cooled by the metal bent structure 14 are not only semiconductor elements 12 such as power semiconductors but also electronic components such as ultra-small transformers and ultra-small choke coils. 23 is useful. The electronic component 23 in which such heat generation is a problem is likely to vary in thickness and the like, and conventional heat radiating members may not be able to cope with these problems.

  Next, with reference to FIGS. 5A to 5C, the effect of absorbing the dimensional variation by the metal bent structure 14 will be described. FIGS. 5A to 5C are cross-sectional views illustrating the followability of the metal bent structure 14.

  In FIG. 5A, the thicknesses of the semiconductor elements 12a to 12c are substantially the same, but the thicknesses of the bumps 15a to 15c are different. For example, there is a difference in the number of connection terminals of the semiconductor elements 12a to 12c. For example, in the case of the semiconductor element 12 having a large number of connection terminals, it may be necessary to use bumps 15 having a smaller diameter.

  Arrows 22a to 22c both indicate that the thicknesses of the bumps 15a to 15c are different. 5A and 5B, the size (or height) of the bumps is 15a> 15c> 15b, and the distance between the front surface of the wiring board 11 and the back surface of the semiconductor element indicated by the arrow is 22a. > 22c> 22b.

  As shown in FIGS. 5A and 5B, the size of the bump is increased by the bent structure of the metal bent structure 14 (that is, the upper portion 17 and the lower portion 19 are connected by a bendable intermediate portion 18). The height (or height) can be absorbed efficiently. Note that it may be further bent or bent in the middle of the intermediate portion 18. Thus, the metal bending structure 14 in the present invention uses a metal from the viewpoint of thermal conductivity, and has a portion that is bent or bent at one or more locations. Is.

  FIG. 5C shows a state in which the semiconductor elements 12 d to 12 f are inclined with respect to each other due to the undulation or warping of the wiring board 11. In FIG. 5C, the wiring board 11 is not shown. As shown in FIG. 5C, even if the semiconductor elements 12d to 12f are irregularly inclined with respect to each other, as shown in FIG. These inclinations can be absorbed efficiently.

(Embodiment 3)
Hereinafter, as a third embodiment, an example of a method for manufacturing the semiconductor device 20 described in the first embodiment will be described.

  6A to 6E are cross-sectional views illustrating a state in which a plurality of semiconductor devices 20 are manufactured in a lump.

  6A to 6E, 31a and 31b are molding dies, and 32 is a cavity. In the wiring substrate 11, the inner layer and surface layer copper foil patterns, solder resist, vias for interlayer connection, and the like are not shown. As such a wiring board 11, a multilayer board made of a commercially available glass epoxy resin can be used. In FIG. 6A, the plurality of semiconductor elements 12 have different thicknesses (for example, the thickness of the bumps 15) as shown in FIGS. 5A and 5B. This may occur due to warpage of the wiring board 11 or mounting variations due to face-down mounting. In FIG. 6A, the electronic component 23 and the like are not shown.

  FIG. 6B is a cross-sectional view showing a state in which the metal bent structure 14 is set on the plurality of semiconductor elements 12. The metal bent structure 14 is fixed with an adhesive (preferably using an epoxy resin to which a ceramic filler with high thermal conductivity such as alumina is added) or a thermal conductive tape (including double-sided tape). It is useful. In these steps, it is useful to use a window 24 provided in the metal bent structure 14 and a window 24 (both not shown) formed by bending the intermediate portion 18 and the lower portion 19. Also, when positioning the metal bent structure 14 on the semiconductor element 12, it is useful to use a window 24 (both not shown) formed by bending the intermediate portion 18 and the lower portion 19.

  In FIG. 6B, one metal bent structure 14 may be set on a plurality of semiconductor elements 12, and then divided into a plurality of pieces as shown in FIG. 6E. By doing so, productivity can be improved, but this is due to the bent structure of the metal bent structure 14 of the present invention.

  FIG. 6C is a cross-sectional view for explaining how the sealing resin body 13 is molded into a predetermined shape using the molding dies 31a and 31b. In FIG. 6C, a cavity 32 is provided between the molding dies 31a and 31b. Next, a sealing resin is injected into the cavity 32 to obtain the state shown in FIG. Thereafter, as shown in FIG. 6E, these are cut into predetermined dimensions to form the semiconductor device 20.

(Embodiment 4)
Hereinafter, as a fourth embodiment, members used for the metal bent structure 14 and the like used for the semiconductor device 20 described in the first embodiment will be described.

  First, as the metal bent structure 14, it is desirable to use a metal plate 27 having a thickness of 0.05 mm to 0.50 mm (desirably 0.10 mm to 0.30 mm). When the thickness of the metal plate 27 is less than 0.05 mm, the heat dissipation effect (or heat conduction efficiency) may be low. In addition, when the thickness of the metal plate 27 is greater than 0.50 mm, it may affect the thinning of the semiconductor device 20.

  As a kind of metal used for the metal bent structure 14, it is desirable to use copper (Cu), aluminum (Al), or an alloy thereof. Copper and aluminum are rich in thermal conductivity, workability and formability (including bendability). It is also easy to form burrs on the cut side surface, the cut side surface, or the like at the time of cutting or punching.

  It is useful to perform plating (solder plating, nickel plating, tin plating, etc.) or rust prevention treatment on the surface of the metal bent structure 14. Further, an insulating member may be formed on the surface of the metal bent structure 14 by coating or the like. Further, as the metal bent structure 14, a commercially available hoop material (hoop means oop; sometimes called a coil material, a strip plate, or a strip material. It is also useful to use a plated hoop material). It may be used.

  In addition, as a dimension shape of the semiconductor device 20, 2 mm square or more and 50 mm square or less are desirable. In the case of the semiconductor device 20 smaller than 2 mm square, the predetermined heat dissipation effect may not be obtained even if the metal bent structure 14 shown in FIG. Moreover, when it exceeds 50 mm square, a use may be limited.

  The thickness of the semiconductor device 20 is desirably 0.5 mm or greater and 5.0 mm or less. When it is thinner than 0.5 mm, the shape of the metal bent structure 14 may be complicated. Moreover, when thickness becomes thicker than 5.0 mm, a use may be limited.

(Embodiment 5)
Hereinafter, as the fifth embodiment, another configuration of the metal bent structure 14 described in the first embodiment will be described.

  FIG. 7 is a cross-sectional view for explaining another structure of the metal bent structure 14. In FIG. 7, the metal bent structure 14 is obtained by bending a single metal plate 27 (not shown) at a substantially central position. It is good also as a metal bending structure 14 as shown in FIG. In FIG. 7, burrs 21 and the like at the peripheral edge of the metal bent structure 14 are not shown.

  The burr 21 is a protruding portion at the end, which is also written as “burr”. Further, it is desirable that the size of the burr 21 (for example, the height of the burr 21) is 0.5 times the thickness of the metal plate 27 or the presence of the burr 21 can be felt at the fingertip. If it is less than 0.5 times, the anchor effect may be low. In addition, the fine burr 21 that does not feel the presence even when the peripheral edge of the metal bent structure 14 is touched with a fingertip may not obtain a predetermined anchor effect.

  Further, the burr 21 may be formed at any one or more of the upper portion 17, the intermediate portion 18, and the lower portion 19 of the metal bent structure 14. Note that burrs 21 are formed in the vicinity of the connection portion between the upper portion 17 and the intermediate portion 18 and in the connection between the lower portion 19 and the intermediate portion 18 (for example, in the vicinity of the bent portions indicated by dotted lines 30a and 30b in FIGS. It is desirable to do.

  The sealing resin body 13 is formed by sealing resin in a predetermined shape. As a resin material used for the sealing resin body 13, an epoxy resin added with an inorganic filler (for example, alumina powder) having high thermal conductivity is commercially available as a sealing resin. Select according to the application.

  By using the semiconductor device of the present invention, it is possible to further reduce the size and heat dissipation of a mobile phone, a mobile terminal, and the like.

DESCRIPTION OF SYMBOLS 1 Metal plate 2 Thermal conductive elastic body 3 Semiconductor element 11 Wiring board
12 Semiconductor elements
13 Sealing resin body
14 Metal bent structure
15 Bump
16 External terminal 17 Upper part 18 Middle part 19 Lower part 20 Semiconductor device 21 Burr 22 Arrow 23 Electronic component 24 Window 25a, 25b Conventional semiconductor device 26a-26d Radiator 27 Metal plate 28a, 28b Cutting part 29a, 29b End part 30a, 30b Dotted line (folding line)
31a, 31b Mold 32 Cavity

Claims (6)

A wiring board;
On the wiring board, a semiconductor element mounted face down,
A metal bent structure placed on the semiconductor element;
On the wiring board, a sealing resin body that covers the wiring board, the semiconductor element, and the metal bent structure;
A semiconductor device comprising:
The metal bent structure is a semiconductor device in which a metal plate is bent. A wiring board;
On the wiring board, a semiconductor element mounted face down,
A metal bent structure placed on the semiconductor element;
On the wiring board, a sealing resin body that covers the wiring board, the semiconductor element, and the metal bent structure;
A semiconductor device comprising:
The burr | flash provided in the peripheral part of the said metal bending structure is a semiconductor device which has faced the inner side of the said metal bending structure. A wiring board;
On the wiring board, a semiconductor element mounted face down,
A metal bent structure placed on the semiconductor element;
On the wiring board, a sealing resin body that covers the wiring board, the semiconductor element, and the metal bent structure;
A semiconductor device comprising:
The burr provided on the peripheral edge of the metal bent structure faces the inside of the metal bent structure,
A semiconductor device, wherein a part of the metal bent structure is planar and substantially parallel to the top surface of the sealing resin body. 4. The semiconductor device according to claim 1, wherein a part of the metal bent structure is exposed on a surface of the sealing resin body. 5. The semiconductor device according to claim 1, wherein the semiconductor element and the metal bent structure are fixed to each other by an adhesive. A wiring board;
On the wiring board, a semiconductor element mounted face down,
A metal bent structure placed on the semiconductor element;
On the wiring board, a sealing resin body that covers the wiring board, the semiconductor element, and the metal bent structure;
A method for manufacturing a semiconductor device comprising:
A step of bending a metal plate of a predetermined shape to produce a metal bent structure;
Setting the metal bent structure on the semiconductor element;
Sealing the metal bent structure together with the semiconductor element with a sealing resin;
A method of manufacturing a semiconductor device including:

Images