JP2010215947A - Method for depositing thin film by laser cvd, and gas window suitable for the method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for depositing a thin film by the laser CVD capable of unifying the deposition thickness of a CVD thin film in the vertical direction and the right-to-left direction as much as possible when depositing a raw material while moving a gas window at a high speed, and a gas window suitable for the method. <P>SOLUTION: The CVD gas atmosphere between a surface of an object for depositing a thin film and a gas window is formed by blowing CVD raw material gas parallel to the surface of the object for depositing a thin film so that gas is concentrated to the scheduled position of the irradiation spot from three or more gas outlets 110a, 111a, 112a, 113a arranged around the scheduled position of the irradiation spot 116 in a surrounding manner. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a method for forming a thin film by laser CVD used for applications such as repair of disconnection of an FPD substrate and defect repair of a photomask, and a gas window suitable for the method.

  For applications such as repair of disconnection of an FPD substrate and repair of a defect of a photomask, a thin film forming apparatus by laser CVD has been conventionally used.

  This thin film forming apparatus by laser CVD includes a laser unit including a laser light source, a laser irradiation observation unit including an optical system and an observation device for guiding laser light to the surface of a thin film formation target (for example, an FPD substrate or a photomask). A gas supply / exhaust unit such as a CVD gas or a purge gas, an XY stage on which a thin film formation target is placed, a control unit for controlling these, and a surface of the thin film formation target. A gas window (also referred to as a window port) for supplying gas and holding gas and introducing laser light is provided.

  In the conventional gas window, the purge gas flows from the top to the bottom toward the thin film formation surface in the central space of the gas window, while from the CVD source supply port provided at the lower wall surface surrounding the central space. An airflow forming technique in which a CVD source gas is blown out parallel to the surface of the thin film formation target has been adopted.

  The reason is that the flow of the CVD gas is disturbed by the flow of the purge gas in the air flow formation method in which the source gas flows from the top to the bottom of the thin film formation object from the CVD material supply port in the central space of the gas window. This is because a CVD source gas atmosphere having a sufficient concentration may not be formed in the laser beam irradiation part (see, for example, Patent Document 1).

JP 2001-207267 A

  However, in such a conventional thin film forming apparatus using laser CVD, since there is only one CVD source gas outlet in the gas introduction space of the gas window, the source gas has a diffusion direction, and the CVD source There is a tendency of strength depending on the direction of the deposition, and when depositing the material while moving the gas window at high speed, the direction of this material diffusion is emphasized, and the variation in the deposition thickness in the vertical and horizontal directions is emphasized. There was a problem that said that occurred.

  The present invention has been made paying attention to the above-mentioned problems, and its purpose is to deposit the CVD thin film in the vertical and horizontal directions when depositing the raw material while moving the gas window at high speed. Is to provide a gas window suitable for the thin film formation method by laser CVD and the same method.

  Another object of the present invention is to form a thin film by laser CVD capable of processing many defects in a short time by performing defect repair by laser CVD at a speed several times higher than the conventional speed. A method and a gas window suitable for the method are provided.

  Other objects and operational effects of the present invention will be easily understood by those skilled in the art by referring to the following description of the specification.

  The problem to be solved by the above-described invention can be solved by a thin film forming method by laser CVD having the following configuration.

That is, in this thin film forming method by laser CVD, the surface of a thin film forming object is covered with a gas window through a slight gap, and an atmosphere of a CVD source gas is formed therebetween, and the gas window and the thin film are formed. While moving the formation object relative to the surface of the thin film formation object, the laser light introduced from the laser light introduction window of the gas window into the gas window is transmitted to the thin film formation object. A thin film formation method by laser CVD in which a CVD thin film is continuously formed on the surface of the thin film formation object along the movement locus by forming an irradiation spot of a predetermined shape by irradiating the surface. Because
The formation of the CVD gas atmosphere between the surface of the thin film formation object and the gas window is performed by the three or more gas outlets arranged around the irradiation spot planned position, The CVD source gas is blown out in parallel with the surface of the thin film formation target so as to concentrate toward the planned irradiation spot position.

  According to such a configuration, the formation of the CVD gas atmosphere between the surface of the thin film formation target object and the gas window is performed by three or more plural pieces arranged around the irradiation spot planned position. From the individual gas outlets, it is performed by blowing out the CVD source gas in parallel with the surface of the thin film formation target so as to concentrate toward the irradiation spot planned position from the individual gas outlets. Even if the source gas to be blown out has a diffusion direction, at the planned irradiation spot position where they are concentrated, the diffusion directions are canceled each other, and a high concentration and highly uniform source gas is obtained. Therefore, even when depositing raw materials while moving the gas window at high speed, the thickness of the CVD thin film can be increased in the vertical and horizontal directions. It can be homogenized in.

  As a preferred embodiment of the above-described method, the plurality of gas outlets may be arranged around the planned irradiation spot at equal angular intervals.

  According to such a configuration, the diffusion directionality of the source gas blown out from the individual gas blowout outlets affects the azimuth equally in all directions. Therefore, in the irradiation spot planned position where they are concentrated, The diffusion direction of the material is further offset, and a more highly concentrated and highly uniform source gas can be obtained. Even when the source is deposited while moving the gas window at high speed, The deposition thickness of the CVD thin film can be made even more uniform.

  At this time, when the plurality is an even number, and the gas outlets are arranged symmetrically with respect to a straight line passing through the irradiation spot planned position and extending in the relative movement direction, The diffusion direction of the gas blown out from each of the pair of left and right gas blowout ports which are axisymmetric with respect to a straight line extending in the relative movement direction, in addition to the fact that there is no gas blowout port for blowing out gas in the same direction or in the opposite direction The characteristics are all symmetrical with respect to the relative movement direction, and are also symmetrical with respect to the straight line extending in the left-right direction. Therefore, regardless of the relative movement speed and the gas blowing strength, In this direction, a high concentration and a uniform film thickness can be guaranteed. At this time, when the number is four, the above-described effects can be realized at the lowest cost.

  In the above-mentioned method and each embodiment, if the shape of the irradiation spot is a rectangle, the efficiency of the wiring repair work and the like can be further improved, and the efficiency of the disconnection repair work of the FPD substrate can be realized. it can.

  The problem to be solved by the above-described invention can be realized as a gas window having a novel configuration when viewed from another aspect.

That is, the gas window is between the surface of the thin film formation object and a laser light irradiation device that irradiates the surface of the thin film formation object with laser light having a predetermined cross-sectional contour, and An atmosphere of a CVD source gas is formed between the surface of the thin film formation object and the surface of the thin film formation object while allowing laser light to pass from the laser irradiation device to the surface of the thin film formation object. Gas window
A gas introduction space formed inside,
A laser light introduction window that is located above the gas introduction space and introduces laser light coming from the laser light irradiation device into the gas introduction space;
A bottom opening at the bottom of the gas introduction space, which is open to the thin film formation object side and allows laser light introduced from the laser light introduction window to pass through the surface of the thin film formation object;
A purge gas outlet for introducing a purge gas into the gas introduction space, on the wall surface of the gas introduction space;
On the wall surface of the gas introduction space, a raw material gas outlet for introducing a CVD source gas into the gas introduction space,
A gas suction port for exhausting gas on the bottom surface surrounding the bottom opening,
The source gas outlet comprises a plurality of three or more source gas outlets, and the plurality of source gas outlets are located in the vicinity of the bottom opening of the gas introduction space, It is distributed and arranged on the wall surface of the gas introduction space so as to surround the center of the void, and from the raw material gas outlet, toward the center of the gas introduction void and the thin film formation target The material gas is configured to blow out in parallel with the surface of the object.

  According to such a configuration, the source gas outlet comprises a plurality of source gas outlets of three or more, and the plurality of source gas outlets are in the vicinity of the bottom opening of the gas introduction space. The gas introduction space is distributed on the wall surface of the gas introduction space so as to surround the center of the gas introduction space, and from the source gas outlet, the center of the gas introduction space is provided. Since the source gas is blown out in parallel with the surface of the thin film formation object, the above-described method can be achieved by performing thin film formation by laser CVD using such a gas window. The same effect can be obtained.

  In a preferred embodiment of the above-described gas window, the plurality of gas outlets are distributed at equiangular intervals on the wall surface of the gas introduction space so as to surround the center of the gas introduction space. It may be arranged. At this time, the plurality is an even number, and the gas outlets pass through the center of the gas introduction space and in the planned relative movement direction of the gas window and the thin film forming object. You may arrange | position symmetrically with respect to the extending straight line. The gas window according to claim 8. At this time, the plurality may be four.

  In the gas window described above, in a preferred embodiment, the predetermined cross-sectional contour of the laser beam may be a rectangle, and the longitudinal direction thereof may be aligned with the relative movement direction. .

  Further, the above-described outer window may be used for repairing the disconnection of the FPD substrate.

  According to the present invention, the formation of the CVD gas atmosphere between the surface of the thin film formation target object and the gas window is performed by a plurality of three or more plural pieces arranged around the irradiation spot planned position. Since it is performed by blowing the CVD source gas in parallel with the surface of the thin film formation target so as to concentrate toward the irradiation spot planned position from the gas blowing port, it is blown out from each gas blowing port. Even if the raw material gas has a diffusion direction, at the irradiation spot planned position where they are concentrated, the diffusion directions are canceled each other, and a high concentration and highly uniform raw material gas can be obtained. Even when raw materials are deposited while moving the gas window at high speed, the thickness of the CVD thin film is as uniform as possible in the vertical and horizontal directions. It can be.

It is a block diagram which shows the whole thin film formation apparatus by a laser CVD method. It is a bottom view of a gas window. It is sectional drawing of a gas window. It is a principal part enlarged view (this invention) of a gas window bottom face. It is a principal part enlarged view of a gas window bottom face (conventional example).

  Hereinafter, a thin film forming method by laser CVD according to the present invention and a preferred embodiment of a gas window (also referred to as “window port”) suitable for the method will be described in detail with reference to the accompanying drawings. .

  FIG. 1 is a block diagram showing the entire thin film forming apparatus 10 by laser CVD. In the figure, reference numeral 7 denotes an XY stage on which a thin film forming object 6 such as a liquid crystal FPD substrate having a broken portion is placed with the planned thin film formation surface facing upward. The gas window 1 is supported on the XY stage 7 with a slight space between the thin film formation object 6 and the XY stage 7.

  The gas window 1 is a laser beam for introducing a laser beam arriving from a laser beam irradiation device into the gas introduction space, which is provided inside the gas introduction space and an upper portion of the gas introduction space. An introduction window, and a bottom opening that is located at a lower portion of the gas introduction space and is opened toward the thin film formation object side, and allows laser light introduced from the laser light introduction window to pass through the surface of the thin film formation object. A purge gas outlet for introducing purge gas into the gas introduction space, and a wall surface of the gas introduction space into the gas introduction space. It has a source gas outlet for introducing a CVD source gas and a gas inlet for exhausting gas on the bottom surface surrounding the bottom opening and exhausting the gas (details will be described later).

  A laser irradiation observation unit 2 is installed directly above the gas window 1. The laser irradiation observation unit 2 includes an attenuator that changes the irradiation power of the laser beam, a variable aperture mechanism that changes the shape of the laser beam to be irradiated, a mechanism that adjusts the focal position by moving the objective lens up and down, and a pattern of the laser beam irradiation unit It has a known configuration (not shown) including a microscope mechanism for observing the shape. Laser light emitted from a laser unit 4 including a laser light source for laser CVD is irradiated onto a predetermined portion on the thin film forming object 6 through the laser irradiation observation unit 2 and the gas window 1.

  In addition, the thin film forming apparatus 10 includes a gas supply / exhaust unit 3 and a control unit 5. The gas supply / exhaust unit 3 includes a mechanism for supplying the CVD gas and the purge gas supplied to the gas window 1 at a necessary timing and detoxifying the exhaust gas sucked from the gas window 1.

  The control unit 5 controls the emission timing of the laser beam, the operation of the XY stage 7, the timing control of the gas on / off valve of the gas supply / exhaust unit 3, the illumination of the laser irradiation observation unit 2, the aperture control, the attenuation rate control of the attenuator, etc. The operation of each unit in the thin film forming apparatus 10 is controlled.

  Next, a configuration example of the gas window 1 will be described with reference to FIGS. 2 and 3. 2 is a bottom view of the gas window, and FIG. 3 is a cross-sectional view of the gas window.

  As is apparent from these drawings, the gas window 1 has a basic structure in which an upper disk 101 and a lower disk 102 are joined.

  At the center of the upper disk 101, a laser beam introduction window 103 is formed by inserting a glass plate into a circular opening. A gas introduction space 109 having an inverted frustoconical shape is formed at the center of the lower disk 102 corresponding to just below the laser beam introduction window 103.

  A central opening 119 that opens the gas introduction space 109 to the lower surface side is formed at the center of the lower surface of the lower disk 103, and an inner annular ridge 105 is formed so as to surround this. . An outer annular ridge 104 is formed on the lower surface side of the lower disk 102 so as to surround the inner annular ridge 105.

  An inner annular suction port 107 for exhausting gas supplied from the outside is formed between the gas window 1 and the thin film forming object 6 at the outer edge portion of the inner annular protrusion 105, and the outer annular protrusion is formed. Similarly, an outer annular suction port 106 for exhausting gas is formed at the inner edge of 104. Due to the presence of these annular suction ports 106 and 107, exhaust of various gases introduced from the outside and a shielding action for preventing air from entering the central portion of the gas window 1 are achieved.

  A purge gas is introduced into the gas introduction space 109 between the gas introduction space 109 and the upper surface of the upper disk 101, as shown in the cross-sectional view along the line AA in FIG. A purge gas passage 108 is provided, an inlet 108 a is provided on the upper surface of the upper disk 101, and an outlet (purge gas outlet) 108 b is provided on the upper portion of the wall surface 109 a of the gas introduction space 109. For this reason, the purge gas flows toward the substrate surface to be the thin film formation object 6 in a downward direction from the upper part to the lower part of the gas introduction space 109.

  As shown in the cross-sectional view along line CC in FIG. 3C, the CVD source gas is introduced into the gas introduction space 109 at the cross-sectional position rotated by 45 ° in the positive direction in FIG. For this purpose, a first source gas passage 110 and a third source gas passage 112 are provided.

  An outlet (first raw material gas outlet) 110a of the first raw material gas passage 110 is provided on a wall surface 109a in the vicinity of the central opening 119 located at the bottom of the gas introduction space 109. The outlet (third source gas outlet) 112 a of the source gas passage 112 is provided on the wall surface 109 a near the central opening 119 located at the bottom of the gas introduction space 109.

  From these first and third source gas outlets 110a, 112a, source gas is blown out toward the center of the gas introduction space 109 and in parallel (horizontally) with the surface of the thin film formation object 6. It is configured.

  As shown in the cross-sectional view along the line BB in FIG. 3B, the CVD source gas is introduced into the gas introduction space 109 at the cross-sectional position rotated 45 degrees in the negative direction in FIG. For this purpose, a second source gas passage 111 and a fourth source gas passage 113 are provided.

  An outlet (second raw material gas outlet) 111a of the first raw material gas passage 111 is provided on a wall surface 109a in the vicinity of the central opening 119 located at the bottom of the gas introduction space 109. The outlet (fourth source gas outlet) 112 a of the source gas passage 113 is provided on the wall surface 109 a near the central opening 119 located at the bottom of the gas introduction space 109.

  From these second and fourth source gas outlets 111a and 113a, source gas is blown out toward the center of the gas introduction space 109 and in parallel (horizontally) with the surface of the thin film forming object 6. It is configured.

  As shown by a wavy line in FIG. 2, an arc-shaped communication passage that connects the first raw material gas passage 110 and the second raw material gas passage 111 is formed on the joint surface between the upper disk 101 and the lower disk 102. A first source gas inlet (source gas supply port) 114 that opens to the upper surface side of the upper disk 101 is provided in the middle of the communication passage. Similarly, the joining surface of the upper disk 101 and the lower disk 102 has an arcuate shape that connects the third source gas passage 112 and the fourth source gas passage 113 as shown by the wavy line in FIG. A communication path is formed, and a second source gas inlet (source gas supply port) 115 that opens to the upper surface side of the upper disk 101 is provided in the middle of the communication path.

  Therefore, by supplying the source gas from the first and second source gas inlets 114 and 115, four source materials arranged at 90 ° intervals on the lower inner periphery of the wall surface 119a of the gas introduction space 119 The material gas can be blown out in the horizontal direction from the gas outlets 110a, 111a, 112a, 113a toward the center of the gas introduction space 109.

  The control unit 5 controls the XY stage 7 so as to relatively move the gas window 1 and the thin film forming object (substrate etc.) 6 in the left-right direction in the figure indicated by the arrow 118 in FIG. It has become. Here, as is apparent from FIG. 4, the four raw material gas outlets 110 a, 111 a, 112 a, 113 a are all provided at positions inclined by 45 ° with respect to the relative movement direction indicated by the arrow 118. As described above, the material gas is blown out in the horizontal direction toward the center of the gas introduction space 109 at each angle.

  In addition, the control unit 5 performs aperture control on the laser irradiation observation unit 2 to shape the cross-sectional contour of the laser light into a rectangular shape, so that the central portion of the gas introduction space 109 is formed as shown in FIG. That is, the rectangular irradiation spot 116 is formed at the laser spot formation scheduled position. Here, the direction of the long side of the rectangular irradiation spot 116 is configured to match the relative movement direction indicated by the arrow 118. For comparison, the shape of a conventional laser spot is illustrated in FIG. As shown in the figure, the conventional laser spot is a square irradiation spot 119.

  Thus, the above-mentioned gas window 1 is between the surface of the thin film formation object 6 and the laser irradiation observation unit 2 that irradiates the surface of the thin film formation object 6 with laser light having a predetermined cross-sectional outline, It is arranged close to the surface of the thin film formation object 6, thereby allowing laser light to pass from the laser irradiation observation unit 2 to the surface of the thin film formation object 6 and between the surface of the thin film formation object 6. The atmosphere of the CVD source gas is formed.

  The gas window 1 has a gas introduction space 109 formed therein, and an upper portion of the gas introduction space 109, and the laser light arriving from the laser irradiation observation unit 2 is passed through the gas introduction space 109. The laser light introduction window 103 to be introduced into the gas source and the gas introduction space 109 are opened to the thin film formation object 6 side, and the laser light introduced from the laser light introduction window 103 is converted into the thin film formation object. 6, a bottom opening 119 that passes to the surface of the gas 6, a wall surface 109 a of the gas introduction space 109, a purge gas outlet 108 b for introducing purge gas into the gas introduction space 109, and a gas introduction space A source gas outlet 110a, 111a, 112a, 113a for introducing a CVD source gas into the gas introduction space 109, and a bottom portion In the bottom of the surrounding around the mouth 119, and has a gas inlet 106, 107 for exhausting gases.

  Further, the raw material gas outlet comprises three or more (in this example, four) raw material gas outlets 110a, 111a, 112a, 113a, and the plurality of raw material gas outlets are used for introducing the gas. In the vicinity of the bottom opening 119 of the void 109, the gas introduction void 109 is distributed on the wall surface 109a so as to surround the center of the gas introduction void 109, and the raw material gas outlet 110a. , 111a, 112a, 113a are configured such that the source gas blows out toward the center of the gas introduction space 109 and in parallel with the surface of the thin film forming object 6.

  Therefore, according to this embodiment, the formation of the CVD gas atmosphere between the surface of the thin film formation object 6 and the gas window 1 is surrounded by the surrounding spot so as to surround the planned irradiation spot 116 as shown in FIG. By blowing out the CVD source gas in parallel with the surface of the thin film formation object 6 from the four gas outlets 110a, 111a, 112a, 113a arranged at the center of the thin film formation object 6 so as to concentrate toward the planned irradiation spot position. Therefore, even if the raw material gas blown out from the individual gas outlets has a diffusion directionality, at the irradiation spot planned position where they are concentrated, the diffusion directionality cancels each other, and high Concentrated and highly uniform source gas can be obtained, and even when the source is deposited while moving the gas window at high speed. It can be made uniform as much as possible the deposition thickness of CVD films in vertical and horizontal directions.

  Further, in this example, the four gas outlets are arranged around the planned irradiation spot positions at equal angular intervals, and thus are blown out from the individual gas outlets 110a, 111a, 112a, 113a. Since the diffusion directionality of the raw material gas equally affects all orientations, at the irradiation spot planned position where they are concentrated, the diffusion directionality is more offset and the concentration is further increased. A highly uniform source gas can be obtained, and even when the source is deposited while moving the gas window at high speed, the thickness of the CVD thin film in the vertical and horizontal directions can be made more uniform. .

  Furthermore, since the plurality is an even number and the gas outlets are arranged in line symmetry with respect to a straight line passing through the irradiation spot planned position 116 and extending in the relative movement direction 118, The diffusion direction of the gas blown out from each of the pair of left and right gas blowout ports which are axisymmetric with respect to a straight line extending in the relative movement direction, in addition to the fact that there is no gas blowout port for blowing out gas in the same direction or in the opposite direction The characteristics are all symmetrical with respect to the relative movement direction, and are also symmetrical with respect to the straight line extending in the left-right direction. Therefore, regardless of the relative movement speed and the gas blowing strength, In this direction, a high concentration and a uniform film thickness can be guaranteed.

  In addition, since the shape of the irradiation spot 116 is rectangular, the efficiency of the wiring repair work and the like can be further improved, and the efficiency of the work for repairing the disconnection of the FPD substrate can be realized. Many defects can be processed in a short time by performing defect repair by laser CVD at a speed several times higher than the above-mentioned speed.

  In the thin film formation method by laser CVD used for applications such as repair of disconnection of an FPD substrate and photomask defect, the present invention can perform CVD in the vertical and horizontal directions when depositing a raw material while moving a gas window at high speed. The deposition thickness of the thin film can be made as uniform as possible.

DESCRIPTION OF SYMBOLS 1 Gas window 2 Laser irradiation observation unit 3 Gas supply exhaust unit 4 Laser unit 5 Control unit 6 Thin film formation object 7 XY stage 10 Thin film formation apparatus 101 Upper disk 102 Lower disk 103 Laser beam introduction window 104 Outer annular protrusion 105 Inner annular ridge 106 Outer annular suction port 107 Inner annular suction port 108 Purge gas passage 109 Gas introduction space 109a Wall of gas introduction space 110 First source gas passage 110a First source gas outlet 111 Second Source gas passage 111a Second source gas outlet 112 Third source gas passage 112a Third source gas outlet 113 Fourth source gas passage 113a Fourth source gas outlet 114 First source gas inlet 115 First Two source gas inlets 116 Rectangular irradiation spot 117 Single outlet 118 Arrow indicating the moving direction of the gas window 119 Square irradiation spot

Claims (12)

The surface of the thin film formation object is covered with a gas window through a slight gap, and an atmosphere of the CVD source gas is formed therebetween, and the gas window and the thin film formation object are connected to the thin film formation object. The surface of the thin film forming object is irradiated with laser light introduced into the gas window from the laser light introduction window of the gas window while relatively moving along the surface of A thin film formation method by laser CVD that continuously forms a CVD thin film on the surface of the thin film formation object along the movement locus,
The formation of the CVD gas atmosphere between the surface of the thin film formation object and the gas window is performed by the three or more gas outlets arranged around the irradiation spot planned position, A method of forming a thin film by laser CVD, which is performed by blowing the CVD source gas in parallel with the surface of the thin film formation target so as to concentrate toward a planned irradiation spot position. The thin film forming method by laser CVD according to claim 1, wherein the plurality of gas outlets are arranged around the planned irradiation spot at equal angular intervals. The plurality of the plurality is an even number, and the gas outlets are arranged symmetrically with respect to a straight line passing through the irradiation spot planned position and extending in the relative movement direction. 3. A method for forming a thin film by laser CVD according to 2. The thin film forming method by laser CVD according to claim 3, wherein the plurality is four.   The thin film formation method by laser CVD according to any one of claims 1 to 4, wherein a shape of the irradiation spot is a rectangle and a longitudinal direction thereof is aligned with the relative movement direction.   The thin film forming method by laser CVD according to claim 1, wherein the thin film forming method is used for repairing disconnection of an FPD substrate. Located between the surface of the thin film formation object and a laser light irradiation device that irradiates the surface of the thin film formation object with a laser beam having a predetermined cross-sectional contour, and is disposed close to the surface of the thin film formation object. A gas window for forming an atmosphere of a CVD source gas between the laser irradiation apparatus and the surface of the thin film formation object while allowing a laser beam to pass through the surface of the thin film formation object;
A gas introduction space formed inside,
A laser light introduction window that is located above the gas introduction space and introduces laser light coming from the laser light irradiation device into the gas introduction space;
A bottom opening at the bottom of the gas introduction space, which is open to the thin film formation object side and allows laser light introduced from the laser light introduction window to pass through the surface of the thin film formation object;
A purge gas outlet for introducing a purge gas into the gas introduction space, on the wall surface of the gas introduction space;
On the wall surface of the gas introduction space, a raw material gas outlet for introducing a CVD source gas into the gas introduction space,
A gas suction port for exhausting gas on the bottom surface surrounding the bottom opening,
The source gas outlet comprises a plurality of three or more source gas outlets, and the plurality of source gas outlets are located in the vicinity of the bottom opening of the gas introduction space, It is distributed and arranged on the wall surface of the gas introduction space so as to surround the center of the void, and from the raw material gas outlet, toward the center of the gas introduction void and the thin film formation target A gas window configured to blow out the source gas in parallel with a surface of an object. The plurality of gas outlets are distributed at equiangular intervals on the wall surface of the gas introduction space so as to surround the center of the gas introduction space. Gas window as described. The plurality is an even number, and the gas outlets are straight lines extending through the center of the gas introduction space and extending in a predetermined relative movement direction of the gas window and the thin film forming object. The gas window according to claim 8, wherein the gas window is arranged in line symmetry with respect to the gas window. The gas window according to claim 9, wherein the plurality is four.   The gas window according to any one of claims 7 to 10, wherein a predetermined cross-sectional contour of the laser light is rectangular, and a longitudinal direction thereof is aligned with the relative movement direction.   The gas window according to claim 7, wherein the gas window is used for repairing the disconnection of the FPD substrate.

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