JPH0261078A - Parallel flat plate type plasma etching device - Google Patents

Abstract

PURPOSE:To easily allow etching under optimum conditions and to improve the workability in the parallel flat plate type plasma etching device by removably mounting units having plural reactive gas blow holes to an upper electrode. CONSTITUTION:The units 4 having the reactive gas blow holes 6 are removably mounted between sealing materials 5 to the upper electrode 2 in a vacuum chamber 1 of the parallel flat plate type plasma etching device. Since the units 4 can be easily exchanged with the units which are different in the positions, number, etc., of the gas blow holes, the optimum etching conditions are easily found and the plasma etching treatment is executable on the surfaces of semiconductor substrates 7 on a lower electrode 3 under the optimum etching conditions by supplying a reactive gas from a gas introducing pipe 9, by which the working rate of the device is improved and the plasma etching of the surfaces of the substrates 7 with the excellent workability is executed.

Description

[Detailed description of the invention] [Industrial application field] The present invention relates to a parallel plate type plasma etching apparatus.

[Conventional technology]

Conventionally, this type of parallel plate type plasma etching apparatus has, as shown in FIG. 3, an upper electrode 2 connected to a gas introduction pipe 9 in a chamber 1, and a lower electrode 3 holding a semiconductor substrate 7 as a sample. The reaction gas was blown out from a gas blowout 66 provided on the upper electrode 2.

[Problem to be solved by the invention]

In the above-mentioned conventional parallel plate type plasma etching apparatus, since the gas blowing device 66 is provided directly on the upper electrode 3, the structure is such that the position of the holes and the number of holes cannot be easily changed. Therefore, in order to find the optimal etching conditions due to the difference in the position and number of gas blow-off holes 6, it is necessary to replace the upper electrode with gas blow-off holes in different positions and numbers, which reduces workability and equipment. The disadvantage was that the operating rate of the system decreased.

[Means to solve the problem]

The parallel plate plasma etching apparatus of the present invention includes an upper electrode provided in a chamber and connected to a gas introduction pipe;
This is a parallel plate type plasma etching apparatus having a lower electrode for holding a sample, and a removable gas blowing unit having a plurality of gas blowing holes is housed in the upper electrode.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIG. 1 is a sectional view of a first embodiment of the invention.

In FIG. 1, a parallel plate type plasma etching apparatus is provided in a chamber 1 and mainly consists of an upper electrode 2 connected to a gas introduction pipe 9 and a lower electrode 3 supporting a semiconductor substrate 7. Particularly, to the upper electrode 2, a gas blowing unit 4 having gas blowing units 4 in different positions, numbers, and directions is screwed and fixed with a sealing material 5 sandwiched therebetween.

According to the first embodiment configured in this way, the gas blowing unit 4 can be easily replaced.
Since changes in the etching state due to differences in the position, number, etc. of the gas blowing holes 6 can be easily known, it is possible to easily determine etching conditions suitable for fk. Therefore, workability and device availability can be improved.

FIG. 2 is a sectional view of a second embodiment of the invention.

The reaction gas supplied into the chamber 1 passes through the inside of the upper electrode 2, passes through the gas blowing unit 4, and is placed on the semiconductor substrate 7. Types with different positions, numbers, and orientations of gas blowing holes are prepared. It has a structure that allows it to be attached to the upper electrode 2 at a certain angle.

In this second embodiment, the reaction gas is taken in from the gas inlet 8 of the gas blowing unit 4, and
Since the gas is blown out more uniformly, the gas distribution on the semiconductor substrate 7 can be made more uniform, and there is an advantage that the unevenness of the gas distribution due to the difference in the position on the upper electrode 2 can be eliminated.

〔Effect of the invention〕

As explained above, the present invention enables easy finding of optimal etching conditions by installing a removable gas blowing unit having a plurality of gas blowing holes in the upper electrode of a parallel plate type plasma etching apparatus. be able to. Therefore, workability and device availability can be improved.

[Brief explanation of the drawing]

1 and 2 are cross-sectional views of first and second embodiments of the present invention, and FIG. 3 is a cross-sectional view of a conventional parallel plate type plasma etching apparatus. DESCRIPTION OF SYMBOLS 1... Chamber, 2... Upper electrode, 3... Lower electrode, 4... Gas blowing unit, 5... Seal material, 6... Gas blowing hole, 7... Semiconductor substrate, 8
...Gas inlet, 9...Gas inlet pipe.

Claims (1)

[Claims] A removable gas blowing unit having a plurality of gas blowing holes in the upper electrode in a parallel plate plasma etching apparatus having an upper electrode provided in a chamber and connected to a gas introduction pipe, and a lower electrode holding a sample. A parallel plate type plasma etching apparatus characterized by being equipped with a.