JP2010212328A5

JP2010212328A5 -

Info

Publication number: JP2010212328A5
Application number: JP2009054624A
Authority: JP
Filing date: 2009-03-09
Publication date: 2011-11-17
Anticipated expiration: 2029-03-09

Claims

A semiconductor layer forming step of forming a semiconductor layer containing silicon on the upper surface side of the substrate;
A semiconductor film forming step of patterning the semiconductor layer to form an island-shaped semiconductor film;
A metal film forming step of forming a metal film in contact with a side surface of the semiconductor film on the substrate and covering the semiconductor film;
Patterning the metal film, forming an electrode layer on the semiconductor film, and forming an electrode layer projecting an end of the semiconductor film from the electrode layer;
An overcoat step of forming a first insulating film covering the electrode layer and the semiconductor film;
Forming an opening in a portion of the first insulating film corresponding to a part of a boundary portion between the side surface of the end of the semiconductor film protruding from the electrode layer and the first insulating film; An exposure process for exposing a part of the end; and
An edge removing step of removing a part of the exposed edge of the semiconductor film by etching through the opening;
A method for producing a thin film transistor, comprising:

In the exposing step, the semiconductor film is formed along the side surface of the semiconductor film in contact with the metal film at the time of forming the metal film in the metal film forming step at the end of the semiconductor film. Expose part of the area transformed into a conductive compound,
2. The method of manufacturing a thin film transistor according to claim 1, wherein the edge removing step removes a part of a region of the semiconductor film that has changed into the conductive compound. 3.

The semiconductor layer forming step includes a step of forming a protective insulating film on the semiconductor layer,
After the semiconductor film forming step, the protective insulating film is patterned to form a protective film forming step of forming a protective film that covers a region to be a channel in the semiconductor layer,
In the semiconductor film forming step, an impurity semiconductor layer is formed on the semiconductor layer on which the protective film is formed, the impurity semiconductor layer is patterned, and a pair of impurity semiconductor films facing each other with the protective film interposed therebetween Including an impurity semiconductor film forming step of forming
The metal film forming step includes a step of forming the metal film so as to contact the side surfaces of the impurity semiconductor film, the protective film, and the semiconductor film and cover the semiconductor film,
3. The method of manufacturing a thin film transistor according to claim 2 , wherein the electrode layer forming step includes a step of patterning the metal film to form a source electrode and a drain electrode on the pair of impurity semiconductor films.

Before the semiconductor layer forming step, a gate electrode forming step of forming a gate electrode and a lower layer electrode on the upper surface of the substrate,
The semiconductor layer forming step includes: forming a second insulating film on the upper surface of the substrate so as to cover the gate electrode and the lower layer electrode formed in the gate electrode forming step; Forming the semiconductor layer, and
After the semiconductor film forming step, the terminal pad portion includes an electrode exposing step of etching the second insulating film to expose the lower layer electrode,
The metal film deposition step includes the step of depositing the metal film on the second insulating film and the exposed lower electrode,
The electrode layer forming step forms the upper layer electrode on the exposed lower layer electrode by patterning the metal film on the exposed lower layer electrode simultaneously with the formation of the electrode layer in the terminal pad portion. Including steps,
In the overcoat step, the first insulating film is formed so as to cover the upper electrode,
The exposing step includes a step of exposing at least a part of the upper layer electrode by etching the first insulating film on the upper layer electrode simultaneously with the formation of the opening in the terminal pad portion. A method for producing a thin film transistor according to claim 3 .

A semiconductor film containing silicon formed in an island shape on the upper surface side of the substrate;
An electrode layer made of a metal film and formed on the upper part of the semiconductor film in a shape in which an end of the semiconductor film protrudes;
With
The semiconductor film has a cutout portion from which a part of the semiconductor film is removed at the end portion, and the semiconductor film is formed of the metal film when forming the metal film forming the electrode layer in the cutout portion. A thin film transistor, wherein a region transformed into a conductive compound formed along a side surface of the semiconductor film is divided in contact with the film.

A first insulating film covering the electrode layer and the semiconductor film;
A partition formed on the first insulating film;
An opening formed at a position corresponding to the notch of the first insulating film;
With
6. The thin film transistor according to claim 5 , wherein the opening is filled with a material for forming the partition.

A protective film made of a protective insulating film formed on a region to be a channel of the semiconductor film;
On the semiconductor film, a pair of impurity semiconductor films formed at positions facing each other with the protective film interposed therebetween,
With
The electrode layer is formed on the pair of impurity semiconductor films to form a source electrode and a drain electrode,
The thin film transistor according to claim 6 , wherein the first insulating film covers the source and drain electrodes, the impurity semiconductor film, the protective film, and the semiconductor film.