JP2010206068A5 - - Google Patents
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- JP2010206068A5 JP2010206068A5 JP2009051856A JP2009051856A JP2010206068A5 JP 2010206068 A5 JP2010206068 A5 JP 2010206068A5 JP 2009051856 A JP2009051856 A JP 2009051856A JP 2009051856 A JP2009051856 A JP 2009051856A JP 2010206068 A5 JP2010206068 A5 JP 2010206068A5
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本発明の一態様によれば、被処理物を収容し大気圧よりも減圧された雰囲気を維持可能な処理容器と、前記処理容器内を減圧する減圧手段と、前記被処理物を収容する空間と連通しプラズマを発生させる空間を有するプラズマ発生室と、前記プラズマを発生させる空間に電磁波を作用させてプラズマを発生させるプラズマ発生手段と、前記プラズマを発生させる空間にプロセスガスを供給するガス供給手段と、除去液蒸気を前記被処理物を収容する空間に供給する除去液蒸気供給手段と、前記除去液蒸気の凝縮する温度以下となるように前記被処理物の温度を制御する第１の温度制御手段と、前記除去液蒸気の凝縮する温度以上となるように前記処理容器の壁面温度を制御する第２の温度制御手段と、を備えたことを特徴とするプラズマ処理装置が提供される。 According to one aspect of the present invention, a processing container capable of storing an object to be processed and capable of maintaining an atmosphere reduced in pressure from atmospheric pressure, a decompression unit for decompressing the inside of the processing container, and a space for storing the object to be processed A plasma generating chamber having a space for generating plasma, a plasma generating means for generating plasma by applying electromagnetic waves to the space for generating plasma, and a gas supply for supplying process gas to the space for generating plasma A first means for controlling the temperature of the workpiece so as to be equal to or lower than a temperature at which the removal liquid vapor is condensed. plasma treatment, wherein the temperature control means, and the second temperature control means for controlling the wall temperature of the processing chamber such that the temperature above which condensation of the removed liquid vapor, further comprising a Location is provided.
また、本発明の他の一態様によれば、除去液蒸気の凝縮する温度以下となるように被処理物の温度を制御する工程と、前記除去液蒸気を生成する工程と、前記除去液蒸気を前記被処理物の表面に供給し、凝縮させる工程と、前記被処理物の表面を乾燥させて不要物を気化させる工程と、プラズマ生成物を生成する工程と、前記プラズマ生成物を前記被処理物の表面に供給し、プラズマ処理を行う工程と、前記除去液蒸気の凝縮する温度以上となるように処理雰囲気中に露出する部材の温度を制御する工程を備えたこと、を備えたことを特徴とするプラズマ処理方法が提供される。 According to another aspect of the present invention, the step of controlling the temperature of the object to be processed so as to be equal to or lower than the temperature at which the removal liquid vapor is condensed, the step of generating the removal liquid vapor, and the removal liquid vapor To the surface of the object to be processed and condensed, a process of drying the surface of the object to be processed to vaporize unnecessary substances, a step of generating a plasma product, and a step of generating the plasma product to the object to be processed. It was provided with the process of supplying to the surface of a processed material, performing plasma processing, and the process of controlling the temperature of the member exposed in processing atmosphere so that it may become more than the temperature which the above-mentioned removal liquid vapor condenses A plasma processing method is provided.
また、被処理物Ｗの温度を制御するための温度制御手段５１と、処理容器６の温度を制御するための温度制御手段５２とが設けられている。また、温度制御手段５１、温度制御手段５２は制御手段８により制御される。
処理容器６の壁面や整流板１７などにおいて除去液蒸気が凝縮すれば、壁面などが侵食されるおそれがある。そのため、主に被処理物Ｗの表面において除去液蒸気を凝縮させるようにすることが好ましい。
そこで、温度制御手段５１により除去液蒸気が凝縮する温度以下となるように被処理物Ｗの温度を制御するようにしている。また、温度制御手段５２により除去液蒸気が凝縮する温度以上となるように処理容器６の壁面温度を制御するようにしている。この場合、除去液蒸気が凝縮する温度は、予め実験などで求められた蒸気圧曲線に基づいて適宜決定するようにすればよい。なお、除去液蒸気の凝縮は、大気圧下のみならず減圧下、加圧下で行うこともできる。
Further, a temperature control means 51 for controlling the temperature of the workpiece W and a temperature control means 52 for controlling the temperature of the processing container 6 are provided. The temperature control means 51 and the temperature control means 52 are controlled by the control means 8.
If the removal liquid vapor condenses on the wall surface of the processing vessel 6 or the rectifying plate 17, the wall surface or the like may be eroded. Therefore, it is preferable to condense the removal liquid vapor mainly on the surface of the workpiece W.
Therefore, the temperature of the workpiece W is controlled by the temperature control means 51 so as to be equal to or lower than the temperature at which the removal liquid vapor is condensed. Further, the temperature control means 52 controls the wall surface temperature of the processing container 6 so as to be equal to or higher than the temperature at which the removal liquid vapor is condensed. In this case, the temperature at which the removal liquid vapor is condensed may be appropriately determined based on a vapor pressure curve obtained in advance through experiments or the like. The condensation of the removal liquid vapor can be performed not only under atmospheric pressure but also under reduced pressure and under pressure.
次に、本実施の形態に係るプラズマ処理方法について例示をする。
図３は、本実施の形態に係るプラズマ処理方法について例示をするためのフローチャートである。
まず、被処理物Ｗの表面の不要物（例えば、自然酸化膜、酸窒化膜、変質層など）を除去する。
すなわち、まず、主に被処理物Ｗの表面において除去液蒸気が凝縮するように、被処理物Ｗの温度が設定される（ステップＳ１ａ）。
例えば、除去液蒸気が凝縮する温度以下となるように被処理物Ｗの温度を制御する。この場合、被処理物Ｗの温度は、予め求められた除去液の蒸気圧曲線などに基づいて制御される。
また、除去液蒸気が凝縮しないように、処理雰囲気中に露出する部材の温度が被処理物Ｗの温度より高く設定される（ステップＳ１ｂ）。
例えば、除去液蒸気が凝縮する温度以上となるように処理雰囲気中に露出する部材の温度を制御する。
Next, the plasma processing method according to this embodiment will be exemplified.
FIG. 3 is a flowchart for illustrating the plasma processing method according to the present embodiment.
First, unnecessary materials (for example, a natural oxide film, an oxynitride film, and an altered layer) on the surface of the workpiece W are removed.
That is, first, the temperature of the workpiece W is set so that the removal liquid vapor is condensed mainly on the surface of the workpiece W (step S1a).
For example, the temperature of the workpiece W is controlled so as to be equal to or lower than the temperature at which the removal liquid vapor is condensed. In this case, the temperature of the workpiece W is controlled based on the vapor pressure curve of the removal liquid obtained in advance.
In addition, the temperature of the member exposed in the processing atmosphere is set higher than the temperature of the workpiece W so that the removal liquid vapor is not condensed (step S1b).
For example, the temperature of the member exposed in the processing atmosphere is controlled so as to be equal to or higher than the temperature at which the removal liquid vapor is condensed.
以上例示をしたように、本実施の形態に係るプラズマ処理方法は、除去液蒸気が凝縮する温度以下となるように被処理物Ｗの温度を制御する工程（例えば、ステップＳ１ａ）と、除去液蒸気を生成する工程（例えば、ステップＳ２）と、除去液蒸気を被処理物Ｗの表面に供給し、凝縮させる工程（例えば、ステップＳ３）と、被処理物Ｗの表面を乾燥させて不要物を気化させる工程（例えば、ステップＳ４）と、プラズマ生成物を生成する工程（例えば、ステップＳ６）と、プラズマ生成物を被処理物Ｗの表面に供給し、プラズマ処理を行う工程（例えば、ステップＳ７）と、を備えている。
また、除去液蒸気が凝縮する温度以上となるように処理雰囲気中に露出する部材の温度を制御する工程（例えば、ステップＳ１ｂ）を備えるようにすることもできる。
As illustrated above, in the plasma processing method according to the present embodiment, the process of controlling the temperature of the workpiece W so as to be equal to or lower than the temperature at which the removal liquid vapor is condensed (for example, step S1a), and the removal liquid A process of generating steam (for example, step S2), a process of supplying the removal liquid vapor to the surface of the workpiece W and condensing it (for example, step S3), and drying the surface of the workpiece W to make unnecessary materials Vaporizing (e.g., step S4), generating a plasma product (e.g., step S6), supplying the plasma product to the surface of the workpiece W, and performing a plasma process (e.g., step S6) S7).
In addition, a step (for example, step S1b) of controlling the temperature of the member exposed in the processing atmosphere so as to be equal to or higher than the temperature at which the removal liquid vapor is condensed may be provided.
Claims (8)
前記処理容器内を減圧する減圧手段と、
前記被処理物を収容する空間と連通しプラズマを発生させる空間を有するプラズマ発生室と、
前記プラズマを発生させる空間に電磁波を作用させてプラズマを発生させるプラズマ発生手段と、
前記プラズマを発生させる空間にプロセスガスを供給するガス供給手段と、
除去液蒸気を前記被処理物を収容する空間に供給する除去液蒸気供給手段と、
前記除去液蒸気の凝縮する温度以下となるように前記被処理物の温度を制御する第１の温度制御手段と、
前記除去液蒸気の凝縮する温度以上となるように前記処理容器の壁面温度を制御する第２の温度制御手段と、
を備えたことを特徴とするプラズマ処理装置。 A processing container capable of storing an object to be processed and maintaining an atmosphere depressurized from atmospheric pressure;
Decompression means for decompressing the inside of the processing container;
A plasma generating chamber having a space for communicating with a space for accommodating the workpiece and generating plasma;
Plasma generating means for generating plasma by causing electromagnetic waves to act in a space for generating the plasma;
Gas supply means for supplying a process gas to a space for generating the plasma;
Removing liquid vapor supplying means for supplying removing liquid vapor to a space for accommodating the object to be processed;
First temperature control means for controlling the temperature of the workpiece so as to be equal to or lower than the temperature at which the removal liquid vapor is condensed;
Second temperature control means for controlling a wall surface temperature of the processing container so as to be equal to or higher than a temperature at which the removal liquid vapor is condensed;
A plasma processing apparatus comprising:
前記除去液蒸気を生成する工程と、
前記除去液蒸気を前記被処理物の表面に供給し、凝縮させる工程と、
前記被処理物の表面を乾燥させて不要物を気化させる工程と、
プラズマ生成物を生成する工程と、
前記プラズマ生成物を前記被処理物の表面に供給し、プラズマ処理を行う工程と、
前記除去液蒸気の凝縮する温度以上となるように処理雰囲気中に露出する部材の温度を制御する工程を備えたこと、
を特徴とするプラズマ処理方法。 A step of controlling the temperature of the object to be processed so as to be equal to or lower than the temperature at which the removal liquid vapor is condensed;
Generating the removal liquid vapor;
Supplying the removal liquid vapor to the surface of the object to be processed, and condensing;
A step of drying the surface of the object to be processed to vaporize unnecessary substances;
Generating a plasma product;
Supplying the plasma product to the surface of the object to be processed, and performing a plasma treatment;
The step of controlling the temperature of the member exposed in the processing atmosphere so as to be equal to or higher than the temperature at which the removal liquid vapor is condensed;
A plasma processing method characterized by the above.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009051856A JP5253237B2 (en) | 2009-03-05 | 2009-03-05 | Plasma processing apparatus and plasma processing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009051856A JP5253237B2 (en) | 2009-03-05 | 2009-03-05 | Plasma processing apparatus and plasma processing method |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2010206068A JP2010206068A (en) | 2010-09-16 |
| JP2010206068A5 true JP2010206068A5 (en) | 2012-04-19 |
| JP5253237B2 JP5253237B2 (en) | 2013-07-31 |
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| Application Number | Title | Priority Date | Filing Date |
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| JP2009051856A Active JP5253237B2 (en) | 2009-03-05 | 2009-03-05 | Plasma processing apparatus and plasma processing method |
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| JP (1) | JP5253237B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104350584B (en) * | 2012-05-23 | 2017-04-19 | 东京毅力科创株式会社 | Substrate processing apparatus and substrate processing method |
| KR20220097202A (en) * | 2020-12-31 | 2022-07-07 | 세메스 주식회사 | Substrate processing method and substrate processing apparatus |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0496226A (en) * | 1990-08-03 | 1992-03-27 | Fujitsu Ltd | Manufacture of semiconductor device |
| US5282925A (en) * | 1992-11-09 | 1994-02-01 | International Business Machines Corporation | Device and method for accurate etching and removal of thin film |
| JP3335705B2 (en) * | 1993-04-15 | 2002-10-21 | 富士フイルムマイクロデバイス株式会社 | Gas phase decomposition method and decomposition apparatus |
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