JP2010205796A - Substrate processing device and method, semiconductor manufacturing device, semiconductor manufacturing device engineering system, and system - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To reduce utility such as power or the like used in stopping operation. <P>SOLUTION: A semiconductor wafer W is held between a polishing pad 16 and a top ring 18 attached to a rotary surface plate 17 of a CMP (Chemical and Mechanical Polishing) device 1 and is relatively rotated to polish the wafer W. A rinsing flow regulating valve 13 is provided in a rinsing supply pipe 11 to intermittently supply pure water to the polishing pad 16 in a polishing portion 2 to maintain it in a wet state. In a washing portion 3, the polished wafer W is pinched between washing sponge rollers 26, 27 and is washed while carrying it. Rinsing flow regulating valves 14, 14 are provided in rinsing supply pipes 12a, 12b to intermittently supply pure water to the washing sponge rollers 26, 27 to maintain them in a wet state. Assuming that an interval at which the pure water is supplied is t minutes and a duration for which the pure water is supplied each time is dt seconds, the following relations (1) and (2) are satisfied. (1) dt=20ä1.6-exp(-0.01783t)}, (2) 10≤t≤30. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention minimizes the consumption of consumable resources (utilities) such as electricity and cooling water consumed for the operation of a substrate processing apparatus such as a chemical / mechanical polishing apparatus (CMP apparatus). The present invention relates to a substrate processing apparatus reduced to a level of 1, a substrate processing method for saving resources and energy, a semiconductor manufacturing apparatus including the substrate processing apparatus, a semiconductor manufacturing apparatus engineering system, and a system.

In order to operate a CMP apparatus as a substrate processing apparatus, it is necessary to consume consumable resources (utilities) such as ultrapure water, electricity, and cooling water. Depending on the actual operation of the CMP apparatus, a much larger amount of utility may be consumed than the minimum necessary amount to be originally consumed, which is permitted for the convenience of operation. There are considerable reasons why consumption of utilities exceeding the minimum required amount is allowed. For example, avoiding an overload condition caused by rapid and frequent start / stop of the mechanical part of the CMP device, preventing a deviation from a stable operation state due to frequent increase / decrease in utility amount, or returning from an idling state This is to prevent waste of time, power, etc. beyond expectations. Moreover, in order to ensure the flatness of the polishing object to be continuously processed, it has been difficult to reduce utility consumption to be realistic.
However, utility consumption exceeding the amount required for regular operation is inherently inappropriate from the viewpoint of resource saving, energy saving, environmental conservation, etc., and should be shifted to operation with the minimum necessary utility consumption. .

FIG. 9 shows, for example, the types and amounts of utilities conventionally consumed by a 300 mm wafer CMP apparatus in a relatively long-term stop state, and the ratios thereof. Here, the utility amount is a conversion factor defined by SEAJ (Japan Semiconductor Manufacturing Equipment Association) as a normal value (L / min for water, Nm ³ / min for gas, kcal / min for heat dissipation). The value is expressed as the converted consumption kW obtained by multiplying the value by the unit conventionally used such as time).
As is apparent from FIG. 9, when the CMP apparatus has been stopped for a long period of time, the utility with the largest consumption is ultrapure water, and its consumption is 1.76 kW, and the total utility consumption 4 in the stopped state. It accounts for about 40% of .43kW.
On the other hand, the total utility consumption during operation and operation is 8.86 kW according to Non-Patent Document 1 below, and therefore, even during long-term shutdown periods, 50% of utility consumption during operation is consumed. It can be said that. This is a waste of utilities that cannot be ignored from the viewpoint of emphasizing resource saving, energy saving and environmental conservation. Accordingly, there is an urgent need to improve the operation method so that only the minimum necessary utility amount is consumed during a long-term stoppage.
In addition, utility supply programs and / or measuring means such as dedicated sensors and control mechanisms to adjust utility consumption to the minimum amount required by each mechanism / part in order to satisfy actual operating levels. It is desirable to have a built-in CMP apparatus.

Conventionally, in a CMP apparatus, a polishing pad is attached on a rotating surface plate. A semiconductor wafer or the like, which is an object to be polished, is disposed on the polishing pad and held between the top ring and the rotating surface plate. On the polishing pad, a polishing abrasive liquid containing an abrasive is supplied, and inner rinse water made of pure water or ultrapure water is supplied at a flow rate of, for example, 1 L / min (here, a 300 mm semiconductor wafer is polished). Flow rate in case). When polishing a semiconductor wafer, the top ring rotating against the rotating surface plate applies a predetermined pressure, and the surface of the semiconductor wafer in contact with the polishing pad is flattened by a combination of chemical polishing and mechanical polishing. And it is polished to a mirror surface.
During polishing, since the semiconductor wafer is chemically and mechanically polished by the polishing pad and the polishing liquid, SiO ₂ powder, Cu powder, etc. are generated and adhered to the polishing pad as particles that are polishing scraps. Become. If such particles adhere to the polishing pad and stick due to drying, etc., there is a risk of scratching the wafer that is subsequently carried in, so the rinse pad is always supplied to dry the polishing pad. It was necessary to prevent particles and the like from flowing out of the polishing pad at all times.

Moreover, according to the polishing apparatus described in Patent Document 1 below, mist or polishing powder of polishing liquid containing abrasive grains may be generated during polishing and scattered in the air. In addition, the organic solvent and acid cleaning liquid used for cleaning also evaporate in the cleaning section for cleaning the polished semiconductor wafer. In addition, the door for opening and closing is provided in the polishing part and the cleaning part, so when the door is closed by providing a sensor that detects the opening and closing of the door, the amount of exhaust from the inside is reduced and the door is opened. Increased the amount of exhaust from the inside when it is.
Therefore, by detecting the opening and closing of the door and adjusting the amount of exhaust depending on the opening and closing of the door, it includes mist and grinding debris in the internal polishing liquid, or vaporized cleaning liquid regardless of the opening and closing of the door It was necessary to prevent air from flowing into a clean room with a clean atmosphere.
This also reduces the running cost of the exhaust equipment. On the other hand, semiconductor factories are required to reduce costs in consideration of the relationship between semiconductor manufacturing equipment, but no effort has been made to pay attention to the amount of utilities. In order to improve the throughput, it may be necessary to use a utility at all times, and it may have been difficult to make efforts based on the existence of downtime.

JP 11-235660 A

Ebara Times Report 196 (July 2002)

By the way, even when the CMP apparatus is in a long-term stop state, in order to prevent drying of particles adhering to the polishing pad, it is necessary to continuously supply rinsing water to the polishing pad as in the operation. There was a problem that rinse water continued to be consumed.
Similarly, in the CMP apparatus described in Patent Document 1, the opening and closing of the door is detected so that the air containing the mist of the polishing liquid, the grinding dust, or the vaporized cleaning liquid is not discharged to the outside. Although the amount of exhaust in the department is adjusted to increase or decrease, exhaust is continuously performed even during operation or long-term operation stoppage, so it is sufficient to reduce running costs and electricity consumption. There wasn't.

  In view of such circumstances, an object of the present invention is to provide a substrate processing apparatus and method, a semiconductor manufacturing apparatus, a semiconductor manufacturing apparatus engineering system, and a system that reduce utilities such as power when operation is stopped. To do.

The substrate processing apparatus according to the present invention attaches a polishing pad to a rotatable rotating surface plate, holds the substrate between the polishing pad and the top ring, and supplies pure water and / or ultrapure water onto the polishing pad. A substrate processing apparatus configured to perform processing while supplying pure water or / and ultrapure water to a polishing pad, open / close control means for controlling opening / closing of the supply pipe, and opening / closing of the open / close control means And an operation control means for intermittently or continuously performing pure water or / and ultrapure water so that the polishing pad can be maintained in a wet state.
According to the substrate processing apparatus of the present invention, as a result of intermittently supplying pure water or / and ultrapure water to such an extent that the polishing pad can maintain a wet state when the substrate processing is stopped, the polishing pad is in a wet state. Polishing debris that is held and held on the polishing pad floats or stays in pure water or ultrapure water and can flow, and can flow and be discharged together with the substrate and polishing pad even when operation is resumed. . For this reason, it is possible to reliably prevent the polishing dust and the like from adhering to the polishing pad and solidifying due to drying, and the polishing dust and the like fixed when the operation resumes from damaging the substrate.

A substrate processing apparatus according to the present invention is a substrate processing apparatus in which a substrate is cleaned by a cleaning unit and cleaned while supplying pure water or / and ultrapure water to the cleaning unit. A supply pipe for supplying ultrapure water to the cleaning means, an open / close control means for controlling the opening / closing of the supply pipe, and an operation control means for intermittently or continuously opening / closing the open / close control means, the cleaning means being in a wet state It is characterized in that pure water or / and ultrapure water is intermittently supplied so as to maintain the above.
According to the substrate processing apparatus of the present invention, when the substrate processing is stopped, the cleaning unit is intermittently supplied with pure water or / and ultrapure water to such an extent that the cleaning unit can maintain the wet state. The polishing scraps held and held on the cleaning means are in a non-adhering state that floats or stays in pure water or ultrapure water and can flow, so that the polishing scraps dry and adhere to the cleaning means and solidify. Thus, it is possible to reliably prevent the polishing dust or the like stuck when restarting operation from damaging the substrate.

In the substrate processing apparatus according to the present invention, the pure water or / and ultrapure water supply interval is t minutes, and the pure water or / and ultrapure water supply duration is dt seconds. ) And formula (2) are preferably satisfied.
dt = 20 {1.6−exp (−0.01783t)} (1)
10 ≦ t ≦ 30 (2)
In the stopped state, the interval of the supply time t of pure water and / or ultrapure water is set to 10 minutes to 30 minutes. Therefore, if the supply interval t is within this range, the polishing pad is not dried and the wet state is maintained. The utility consumption can be reduced by reducing the supply amount of pure water and / or ultrapure water by intermittent supply. On the other hand, if the supply duration t is less than 10 minutes, the consumption of pure water or ultrapure water increases, and if it is longer than 30 minutes, the polishing pad is likely to dry.

The substrate may be a semiconductor wafer and can be polished without damaging the semiconductor wafer.
Further, the cleaning means may be a cleaning sponge roller, and can be cleaned without damaging the substrate.

A semiconductor manufacturing apparatus according to the present invention includes a CMP (chemical mechanical polishing) apparatus as the substrate processing apparatus according to any one of claims 1 to 5.
Utility consumption can be reduced by reducing the consumption of pure water and / or ultrapure water when the semiconductor manufacturing apparatus is stopped.

    A semiconductor manufacturing apparatus engineering system according to the present invention includes a CMP apparatus as the substrate processing apparatus according to any one of claims 1 to 5.

  The substrate processing method according to the present invention holds a substrate between a polishing pad provided on a rotatable rotating surface plate and a top ring, rotates the substrate relatively, and supplies pure water and / or ultrapure water onto the polishing pad. Thus, a substrate processing method for processing a substrate, wherein in a substrate processing stop state, pure water or / and ultrapure water supply pipes are intermittently opened to supply pure water or pure water to a polishing pad. By supplying ultrapure water, the polishing pad can be kept wet.

  A substrate processing method according to the present invention is a substrate processing apparatus that cleans a substrate with a cleaning unit while supplying pure water and / or ultrapure water to the cleaning unit, and is intermittent in a substrate processing stop state. The pure water or / and ultrapure water supply pipe is opened to supply pure water or / and ultrapure water to the cleaning means, so that the cleaning means can maintain a wet state. .

In the substrate processing method according to the present invention, the pure water or / and ultrapure water supply interval is t minutes, and the pure water or / and ultrapure water supply duration is dt seconds. ) And formula (2) are satisfied.
dt = 20 {1.6−exp (−0.01783t)} (1)
10 ≦ t ≦ 30 (2)

The exhaust apparatus of the substrate processing apparatus according to the present invention has a polishing pad attached to a rotatable rotating surface plate, holds the substrate between the polishing pad and the top ring, and has pure water and / or ultrapure water on the polishing pad. An exhaust device for a substrate processing apparatus that performs processing while supplying a pressure converter that is provided in the substrate processing apparatus and detects an internal pressure; an exhaust duct that exhausts the inside of the substrate processing apparatus; The exhaust duct is equipped with an exhaust flow adjustment valve that controls the opening and closing of the exhaust duct and the exhaust amount, and determines whether the differential pressure between the internal pressure detected by the pressure transducer and the external pressure is within a specified range. In addition, when the differential pressure is smaller than a predetermined range, the exhaust flow rate adjustment valve is opened to exhaust the inside of the substrate processing apparatus.
According to the present invention, when the substrate processing apparatus is stopped, the exhaust flow rate adjustment valve of the exhaust apparatus is closed if the internal pressure detected by the pressure transducer can be maintained within a predetermined range with respect to the outside air pressure. If the differential pressure is smaller than the specified range, the exhaust system is operated and exhausted to adjust the differential pressure so that the differential pressure is greatly adjusted. As a result, it is possible to prevent the internal air in which the air is floating from flowing out to the outside, and it is possible to reduce the power consumption because the exhaust device is operated intermittently.
Note that the substrate processing apparatus may be an airtightly partitioned polishing unit, and in this case, the internal air of the polishing unit in which the mist of the internal polishing liquid or polishing dust floats is prevented from flowing out to the outside. In addition, power consumption can be reduced by intermittently operating the exhaust device.

An exhaust apparatus for a substrate processing apparatus according to the present invention includes a cleaning unit that cleans a substrate using a cleaning agent, and performs processing while supplying pure water or / and ultrapure water to the cleaning unit. A pressure transducer that is provided in the processing apparatus and detects the internal pressure, an exhaust duct that exhausts the interior of the substrate processing apparatus, and an exhaust flow rate adjustment that is provided in the exhaust duct and controls the opening and closing of the exhaust duct and the exhaust amount A valve is provided for determining whether or not the differential pressure between the internal pressure and the external pressure detected by the pressure converter is within a predetermined range, and opening the exhaust flow adjustment valve when the differential pressure is smaller than the predetermined range. The substrate processing apparatus is evacuated.
According to the present invention, when the substrate processing apparatus is stopped, the exhaust flow rate adjustment valve of the exhaust apparatus is closed if the internal pressure detected by the pressure transducer can be maintained within a predetermined range with respect to the outside air pressure. If the differential pressure is smaller than the specified range, the exhaust system is activated and exhausted to adjust the differential pressure to a large level. It is possible to suppress the flow out to the outside, and it is possible to reduce power consumption because it is only necessary to operate the exhaust device intermittently.
The substrate processing apparatus may be a hermetically partitioned cleaning unit. In this case, the internal air of the cleaning unit in which the mist of the cleaning liquid floats can be prevented from flowing out, and the exhaust device can be Since only intermittent operation is required, power consumption can be reduced.
Moreover, it is preferable that the predetermined range is a range of -30 Pa to -12.5 Pa.
Furthermore, the system according to the present invention is a system for manufacturing a semiconductor having a first semiconductor manufacturing apparatus, a second semiconductor manufacturing apparatus, and a polishing apparatus, and a utility amount in the first semiconductor manufacturing apparatus, the second semiconductor manufacturing apparatus, and the polishing apparatus. A computer that compares the reference data with the utility amount of each device, generates a control signal, and thereby feedback-controls the utility amount of the first semiconductor manufacturing device, the second semiconductor manufacturing device, and the polishing device It is characterized by having.

According to the substrate processing apparatus and method of the present invention, according to the substrate processing apparatus of the present invention, pure water and / or ultra-high intermittently to such an extent that the polishing pad can be kept wet when the substrate processing is stopped. Since the pure water is supplied, the polishing pad is kept in a wet state, and it is possible to reliably prevent the polishing pad from drying and polishing debris from being solidified on the polishing pad and damaging the substrate when the operation is resumed. And the consumption of the pure water or ultrapure water in a stop state can be reduced.
Further, according to the substrate processing apparatus and method of the present invention, in order to supply pure water or / and ultrapure water intermittently to the cleaning means in the substrate processing stop state, the cleaning means is maintained in a wet state, It is possible to reliably prevent the polishing scraps from being dried and adhered to the cleaning means and solidified to damage the substrate when the operation is resumed. And the consumption of the pure water or ultrapure water in a stop state can be reduced.

It is explanatory drawing of the principal part structure of the CMP apparatus by embodiment of this invention. It is a block diagram of the operation control means of the CMP apparatus in this embodiment. It is a timing chart which shows the relationship between the supply timing of rinse water, and supply amount. It is a flowchart which shows selection of the standby mode and operation mode of CMP apparatus. It is a figure which shows the relationship between the supply time interval of the rinse water to a polishing pad, water supply continuation time, and the total water supply amount. It is a figure which shows the state in which the temperature of the rotation surface plate in a CMP apparatus falls with cooling water. It is a figure which shows the grinding | polishing system of the semiconductor manufacturing apparatus which controls a some grinding | polishing apparatus centrally by one host computer. It is a figure which shows the semiconductor manufacturing apparatus engineering system which controls a several semiconductor manufacturing apparatus centrally with one host computer. It is a figure which shows the quantity and ratio of the utility consumed in the long-term stop state of CMP apparatus.

A CMP apparatus 1 according to an embodiment of the present invention is a substrate processing apparatus. As shown in FIG. 1, a polishing unit 2 that polishes a semiconductor wafer W (substrate) that is an object to be polished, and a wafer W that has been polished are cleaned. The cleaning unit 3 and the cassette 4 (4a, 4b,...) That stores the wafer W are provided, and the transfer unit 5 that transfers the cassette 4 to and from the outside is provided. The polishing unit 2, the cleaning unit 3, and the transport unit 5 are partitioned in a state of being separated from each other as air-tightly partitioned rooms with respect to an external environment such as a clean room.
The polishing section 2 and the cleaning section 3 are individually connected to the exhaust ducts 6 and 7, respectively. The exhaust ducts 6 and 7 are connected to a common exhaust line (not shown) via the exhaust flow rate adjusting valves 8 and 9. The common exhaust line is connected to an exhaust device (not shown). Note that an exhaust duct may also be connected to the transport unit 5.

The exhaust duct 6 and the exhaust flow rate adjusting valve 8 adjust the pressure in the polishing unit 2 so that mist or polishing powder of the polishing liquid is generated during polishing in the polishing unit 2 and does not flow out to the outside even if scattered in the air. The pressure is controlled to be lower than the external pressure (for example, atmospheric pressure), in this case, negative pressure. The exhaust duct 7 and the exhaust flow rate adjusting valve 9 are set so that the pressure in the cleaning unit 3 is lower than the external pressure (here, atmospheric pressure) so that the organic solvent or acid-based cleaning liquid vaporized in the cleaning unit 3 does not flow outside. Then, control to negative pressure.
Similarly, the polishing section 2 and the cleaning section 3 are controlled to open and close by rinse water supply pipes 11 and 12 that supply inner rinse water of pure water for cleaning or ultrapure water (hereinafter collectively referred to as ultrapure water). The rinse water supply pipes 11 and 12 are connected to a common supply line (not shown) via the rinse water flow rate adjusting valves 13 and 14 and communicate with a rinse water supply source.

Next, the polishing unit 2 is provided with a rotating table (turn table) 17 having a polishing pad 16 attached to the upper surface. The wafer W is disposed on the polishing pad 16 and is held between the top ring 18 and the polishing pad 16. Then, the surface of the wafer W held between the polishing pad 16 and the rotating surface plate 17 and the top ring 18 is polished by relative rotation.
Further, a support portion 20 is provided at the lower portion of the rotating surface plate 17, and cooling water pipes 21 are disposed in the supporting portion 20 and the rotating surface plate 17 in, for example, a spiral shape or a lattice shape. The surface temperature of the rotating surface plate 17 is controlled by the flowing cooling water. The cooling water pipe 21 is provided with a cooling water flow rate adjustment valve 22 to adjust the flow rate and opening / closing of the cooling water flowing in the support unit 20 and the rotating surface plate 17.
A supply port 11 a of a rinse water supply pipe 11 is provided on the polishing pad 16 so that the inner rinse water is supplied continuously or intermittently onto the polishing pad 16. Further, the above-described exhaust duct 6 is connected to the ceiling surface of the polishing unit 2. A pressure converter 24 is disposed in the polishing unit 2 as a pressure sensor that detects the atmospheric pressure in the polishing unit 2. The pressure in the polishing unit 2 is lower than the pressure of the external atmosphere (for example, atmospheric pressure) (negative pressure). ) Is detected.
In addition, a transfer robot (not shown) that handles the wafers W before and after polishing may be provided in the polishing unit 2.

The cleaning unit 3 is provided with a pair of cleaning sponge rollers 26 and 27 that are opposed to each other as cleaning means for cleaning the wafer W polished by the polishing unit 2. 27, the wafer W is sandwiched between the wafers and cleaned. The above-described rinse water supply pipes 12 (reference numerals 12a and 12b) are provided in the vicinity of the cleaning sponge rollers 26 and 27, respectively, and ultrapure water is supplied to the cleaning sponge rollers 26 and 27 to provide wafers. W will be washed.
A transfer robot 28 for loading and unloading the wafer W is provided in the cleaning unit 3. A pressure converter 29 is also provided in the cleaning unit 3 as a pressure sensor for detecting the pressure in the cleaning unit 3, and the pressure in the cleaning unit 3 is lower than the pressure of the external atmosphere (for example, atmospheric pressure) (negative pressure). ) Is detected.
In addition, a transfer robot (not shown) for loading / unloading the wafer W may be provided in the transfer unit 5. An unpolished wafer W is unloaded from the cassettes 4a and 4b by the transfer robot and directly or indirectly transferred into the polishing unit 2, and the polished and cleaned wafers W are accommodated in the cassettes 4a and 4b. ing.

Operation control means 31 is disposed outside the polishing unit 2, the cleaning unit 3, and the transport unit 5. The operation control means 31 receives detection signals from pressure transducers 24 and 29 that detect the pressure in the polishing unit 2 and the cleaning unit 3, and the exhaust duct is based on the detected pressure in the polishing unit 2 and the cleaning unit 3. The flow rate and open / close of the exhaust flow rate adjusting valves 8, 9 are controlled. The operation control means 31 is electrically connected to the rinse water flow rate adjustment valves 13 and 14 and the cooling water flow rate adjustment valve 22 so as to control the flow rate and opening / closing thereof.
As shown in FIG. 2, the operation control means 31 includes a mode recognition means 32 for determining whether the CMP apparatus 1 is in an operation state or a stop state by a sensor 30 such as an ON / OFF changeover switch based on a drive command of a drive source (not shown). The operation mode means 33 for controlling the operation of each means of the CMP apparatus 1 in the operation state and the standby mode means 34 for controlling the operation and stop of each means of the CMP apparatus 1 in the stop state are provided.
In the present invention, a state in which the polishing operation of the semiconductor wafer W by the polishing pad 16 is stopped is referred to as a standby state (stopped state) and a standby mode.

For example, in the CMP apparatus 1 for polishing a wafer W having a diameter of 300 mm, the operation control means 31 is on standby in order to prevent the polishing pad 16 and the cleaning sponge rollers 26 and 27 from being dried and to keep the wet state during the stoppage. In the mode means 34, the rinse water flow rate adjustment valves 13, 14 are intermittently opened, and for example, as shown in FIG. 3, the inner rinse water is opened every 20 minutes for 20 seconds, and the rinse water supply pipes 11, 12a, 12b is supplied to the polishing pad 16 and the cleaning sponge rollers 26 and 27 to prevent drying.
At that time, the rinse water flow rate adjustment valve 13 is opened to the polishing pad 16 to supply rinse water, for example, at 1 L / min, and the rinse water flow rate adjustment valves 14 and 14 are opened to the cleaning sponge rollers 26 and 27. In this case, the rinse water is supplied at, for example, 0.6 L / min to prevent the drying and maintain the wet state.

In the operation control means 31 in FIG. 2, the mode recognition means 32 individually identifies the pressure signal in the polishing unit 2 and the pressure signal in the cleaning unit 3 input from the pressure converters 24 and 29. In the standby mode, in the standby mode means 34, the pressure in the polishing unit 2 and the cleaning unit 3 detected by the pressure converters 24 and 29 is -30 Pa (pascals) than the pressure of the external atmosphere, for example, atmospheric pressure. ) To -12.5 Pa It is determined whether or not the pressure is within a range, and if within this range, the exhaust flow rate adjusting valves 8 and 9 are closed and the exhaust is stopped.
Further, in the standby mode means 34, in the stopped state, the pressure in the polishing unit 2 and the cleaning unit 3 is preferably -30 Pa (Pascal) to -12 with respect to these external pressures, for example, the atmospheric pressure described above rather than the atmospheric pressure. Control to maintain a low pressure with a pressure difference in the range of 5 Pa.
In this case, the upper limit value −12.5 Pa of the predetermined pressure difference from the external pressure is the same as the pressure difference value of the clean room set from the NASA standard, and the pressure in the polishing unit 2 and the cleaning unit 3 is larger than this upper limit value. Then, the value of the external pressure rises due to opening and closing of the door, etc., and there is an increased possibility that the mist of the internal polishing liquid, cutting powder, cleaning liquid, etc. will flow out to the outside. On the other hand, if it is smaller than the lower limit value −30 Pa of the predetermined pressure difference, the room of the polishing unit 2 and the cleaning unit 3 may be deformed by the differential pressure and a gap may be formed on the outer wall.
When the respective pressures in the polishing unit 2 and the cleaning unit 3 are higher than the pressure lower than the external pressure by −30 Pa (Pascal) to −12.5 Pa, the exhaust flow rate adjusting valves 8 and 9 are turned on. The valve is opened and switched to the exhaust state, and the pressure is controlled to be reduced to a range of -30 Pa (Pascal) to -12.5 Pa. More preferably, the pressure is reduced to a range of -20 Pa to -15.0 Pa.

The CMP apparatus 1 according to the present embodiment has the above-described configuration. Next, a processing method in the operation stop state will be described.
As described above, with respect to the standby mode of operation in the CMP apparatus 1, for example, the amount and ratio of the utility consumed during the long-term suspension period, conventionally, ultrapure water has the largest consumption of 39.9% of the total consumption utility amount. Focusing on the fact that it occupies a high proportion, the consumption of rinse water made of ultrapure water supplied to prevent drying of the polishing pad 16 and the cleaning sponge rollers 26 and 27 in a stopped state was reduced.

First, in the flowchart shown in FIG. 4, the sensor 30 recognizes whether the operation control means 31 in the CMP apparatus 1 is in an operation mode (operation state) or a standby mode (stop state) (step 101). Next, it is determined whether the standby mode or the operation mode is in accordance with whether or not the standby time until the next operation start is longer than the required temperature drop time (step 102). As described below, the required temperature drop time is the cooling after the cooling water supply from the cooling water pipe 21 to the rotating surface plate 17 is stopped and the temperature of the rotating surface plate 17 rises to about 23 ° C. during standby. It refers to the time (preset) from when water is supplied to cool the rotating platen 17 and to a temperature of 20 ° C. or lower necessary for polishing the wafer W.
When it is determined that the time until the polishing is started is shorter than the required temperature drop time and is not waiting, the operation mode is continued by the operation mode means 33, and the inner rinse in the polishing unit 2 and the cleaning unit 3 is related to this. Water supply and exhaust are continuously performed (step 103).
On the other hand, when it is determined that the time until the start of polishing is longer than the required temperature drop time and is in standby, the standby mode means 34 performs intermittent control such as intermittent supply of inner rinse water, intermittent exhaust, and cooling preparation (step 104). ). Then, regardless of whether the operation mode or the standby mode is selected, it is determined whether or not a predetermined sampling time (for example, 1/100 second) set in advance has elapsed (step 105), and the sampling time has elapsed. If not, the operation mode or the standby mode is further executed. If the sampling time has elapsed, the process returns to step 101 and the sensor 30 determines again whether the operation mode or the standby mode.

In the standby mode, as shown in FIG. 3, in the CMP apparatus 1 for polishing the wafer W having a diameter of 300 mm, the polishing pad 16 and the cleaning sponge rollers 26 and 27 are dried during the standby (stop). In order to prevent and maintain a wet state, the rinse water flow rate adjusting valves 13 and 14 are opened from the rinse water supply pipes 11, 12 a and 12 b every 20 minutes for 20 seconds, and intermittently supplied for cleaning with the polishing pad 16. Drying of the sponge rollers 26 and 27 can be prevented.
When the valve is opened, as shown in FIG. 3, in the polishing unit 2, the rinse water flow rate adjustment valve 13 is opened and the rinse water amount is supplied to the polishing pad 16 at 1 L / min for 20 seconds to prevent drying and wet. State maintenance can be achieved. Further, in the cleaning section 3, the rinse water flow rate adjusting valves 14, 14 are opened, and the rinse water amounts are respectively supplied to the cleaning sponge rollers 26, 27 at 0.6 L / min for 20 seconds, thereby preventing drying and preventing the wet state. Maintenance can be achieved.

In order to prevent the harmful effects caused by drying of the polishing pad 16 and the cleaning sponge rollers 26 and 27, the pure water is supplied once every 30 minutes, and the intermittent supply of the rinsing water described above is performed per experiment. If the supply time was 20 seconds, it was verified that it was at least sufficient. Even in this case, it was experimentally confirmed that the polishing rate of the wafer W and the amount of residual dust on the surface of the wafer W after cleaning were the same as those in the past.
As a result of this change, the amount of pure water to be consumed is
20 seconds / (30 minutes × 60 seconds / minute) = 1 / 90≈1.1%
As a result, the consumption of pure water in the stopped state could be reduced to 1/90 of the conventional (= 1.1%).
Furthermore, by conducting an experiment in which the combination of the supply frequency of intermittently supplied pure water and the supply duration time is set to a level other than the above, the polishing rate of the wafer W and the amount of residual dust on the surface of the wafer W after cleaning are predetermined. Conditions that were within the criteria were determined. Table 1 shows the results. Moreover, when the result of Table 1 is represented with a graph, it will come to show in FIG.

As apparent from the white circle plot in FIG. 5, as the inner water supply time interval t increases, the required water supply duration dt tends to increase as well. For example, when the supply time interval t is 10 minutes, the duration time dt is 15 seconds, and when the supply time interval t increases to 30 minutes, the duration time dt also increases to 20 seconds. This is because the drying of the polishing pad 16 and the cleaning sponge rollers 26 and 27 progresses as the standing time after the supply of the inner rinse water elapses. Therefore, the inner rinse water necessary for restoring the wet condition is restored. The supply will increase.
Furthermore, if the dry state continues for more than 30 minutes, the surface of the polishing pad 16 and the cleaning sponge rollers 26 and 27 will not return to the required wet state even if a large amount of inner rinse water is supplied thereafter. It was possible. This is because the abrasive grains mainly contained in the slurry and the polishing powder / particles of the wafer W are dried and firmly attached to the surfaces of the polishing pad 16 and the cleaning sponge rollers 26 and 27, and the wet clean surface. It can be said that it was impossible to recover.
Further, when the supply time interval is t minutes and the supply duration time of each inner rinse water is dt seconds, the following approximate expression (1) can be used to regress the relationship of Table 1.
dt = 20 {1.6−exp (−0.01783t)} (1)
The solid line shown in FIG. 5 is shown along with the point at which the approximate curve represented by equation (1) was actually measured. Expression (2) can be recognized as approximating the experimental result.

Next, a curve indicated by a broken line in FIG. 5 is a total consumption (supply) amount of inner rinse water per hour when each water supply time interval is executed, which is indicated by a numerical value in parentheses in Table 1. As is apparent from this curve, water consumption tends to increase significantly as the supply time interval t decreases below 10 minutes.
As described above, when the supply time interval exceeds 30 minutes, the harmful effects of drying become serious, and when the time interval is less than 10 minutes, the amount of pure water consumed becomes enormous. It is also necessary to give a limitation of the following formula (2).
10 ≦ t ≦ 30 (2)
If implemented within the conditions shown in Table 1, the finished state of the wafer W falls within the standard, but the total consumption of the inner rinse water increases as the time interval becomes shorter. Most preferably, the interval t = 30 minutes is selected.
As described above, as a result of implementing the CMP apparatus 1 according to the present embodiment, as is apparent from FIG.
1.76 kW × (1-0.011) /4.43 kW = 0.39
Therefore, the reduction of the consumption of pure water when the CMP apparatus 1 is stopped has been able to reduce the conventional total utility consumption 4.43 kW by as much as 39%.

  Therefore, in the CMP apparatus 1 according to the present embodiment, when the operation mode is stopped, the standby mode means 34 supplies the inner rinse water to the polishing pad 16 and the cleaning sponge within a supply time interval t of 10 minutes to 30 minutes for 15 seconds to 20 seconds. By intermittently supplying the rollers 26 and 27, the wet state can be maintained without drying the polishing pad 16 and the cleaning sponge rollers 26 and 27. Therefore, when the CMP apparatus 1 is stopped, the wet state can be maintained without drying the polishing pad 16 and the cleaning sponge rollers 26 and 27, and the supply amount of the inner rinse water can be reduced. As a result, the polishing debris floating in the polishing liquid or the cleaning liquid in the polishing pad 16 or the cleaning sponge rollers 26 and 27 is dried and fixed on the polishing pad 16 or the cleaning sponge rollers 26 and 27, and this is contacted with the wafer W and is damaged. Can be effectively prevented.

Next, an exhaust amount control method in the polishing unit 2 and the cleaning unit 3 when the CMP apparatus 1 is stopped will be described.
When the polishing unit 2 and the cleaning unit 3 of the CMP apparatus 1 are operated, the surface of the wafer W held between the polishing pad 16 and the top ring 18 is polished in the polishing unit 2 by relative rotation of the polishing pad 16 and the top ring 18. During polishing of the wafer W, since the mist of the polishing liquid supplied to the polishing pad 16 and the polishing powder of the wafer W are generated and scattered in the air, the exhaust flow rate adjusting valve 8 is opened and continuously passed through the exhaust duct 6. Exhaust. As a result, mist, polishing powder, and the like in the polishing unit 2 are exhausted and collected through the exhaust duct 6 without flowing out of the polishing unit 2, for example, a clean room in a clean atmosphere or a room at atmospheric pressure.
Similarly, in the cleaning unit 3, the organic solvent or the acid cleaning liquid for cleaning the polished wafer W is evaporated and scattered in the air. This is recovered through the exhaust duct 7 that continuously exhausts, and is prevented from flowing out of the cleaning unit 3.
At that time, the inside of the polishing unit 2 and the cleaning unit 3 is maintained at a pressure lower than the atmospheric pressure by the suction of the exhaust ducts 6 and 7, and the mist and polishing powder of the polishing liquid in the polishing unit 2 and the cleaning unit 3 are volatilized. It is possible to prevent the mist of the organic solvent or the acid-based cleaning liquid from flowing out. Further, the pressures in the polishing unit 2 and the cleaning unit 3 are detected by the pressure converters 24 and 29, respectively, input to the mode recognition unit 32 of the operation control unit 31 and detected to confirm that the pressure is lower than the external pressure.

When the operation of the CMP apparatus 1 is stopped, this is detected by the sensor 30, the exhaust flow rate adjusting valves 8 and 9 of the exhaust ducts 6 and 7 are closed, the exhaust apparatus is turned off, the polishing unit 2 and the cleaning unit The exhaust in 3 is also stopped. In this state, the pressure in the polishing unit 2 and the cleaning unit 3 is lower than the external pressure. This pressure is detected by the pressure converters 24 and 29 and input to the mode recognition unit 32 of the operation control unit 31.
Then, the detected pressure in the polishing unit 2 and the cleaning unit 3 is maintained at a low pressure in the range of -30 Pa (pascal) to -12.5 Pa from the pressure preset by the standby mode means 34, for example, external pressure. The pressure transducers 24 and 29 detect whether or not they are present. When the pressure in the polishing unit 2 and the cleaning unit 3 is within the predetermined low pressure range, the exhaust flow rate adjusting valves 8 and 9 are kept closed. In this case, the internal pressure of the polishing liquid mist, polishing powder, cleaning liquid mist, etc. floating in the polishing section 2 and the cleaning section 3 is maintained at a lower pressure than the outside. Retained without leaking.

Further, when the pressure in the polishing unit 2 or the cleaning unit 3 exceeds this low pressure, the exhaust control is turned on by the operation control means 31 to open the exhaust flow rate adjusting valves 8 and 9, and the polishing unit 2 or the cleaning unit is cleaned. The air in the section 3 is exhausted through the exhaust ducts 6 and 7. The pressure in the polishing unit 2 and the cleaning unit 3 is reduced by exhaust until the pressure in the range of −30 Pa (pascal) to −12.5 Pa is lower than the external pressure.
When the pressure in the polishing unit 2 or the cleaning unit 3 is reduced within the range of -30 Pa (Pascal) to -12.5 Pa, the pressure adjustment valves 24 and 29 are used to confirm the reduced pressure, and the operation control means 31 closes the exhaust flow rate adjusting valves 8 and 9 and turns off the exhaust device.

  The CMP apparatus 1 according to the above-described embodiment has been described for the case where the semiconductor wafer W having a diameter of 30 cm is polished. However, the same CMP apparatus 1 can be used for polishing the semiconductor wafer W having different diameters. Therefore, it is possible to employ intermittent supply control and intermittent exhaust control of ultrapure water to the polishing pad 16 in the standby mode as in the above-described processing method.

Next, a method for cooling the rotating surface plate 17 in the CMP apparatus 1 will be described.
Conventionally, the cooling water is continuously supplied to the cooling water pipe 21 in the standby mode in the stopped state. Usually, since the CMP apparatus 1 is installed in a clean room, the surface temperature of the rotating surface plate 17 does not rise above 23 ° C. even when the supply of cooling water is stopped. However, the surface temperature of the rotating platen 17 rises, and the temperature rise situation varies with the situation of the semiconductor wafer W to be polished and the type of polishing liquid (slurry) to be used.
Therefore, in order to control the surface of the rotating surface plate 17 in an operating state to 20 ° C. or lower, the water temperature in the water storage tank for supplying cooling water to the cooling water pipe 21 formed in the rotating surface plate 17 in a spiral shape is cooled. The temperature is controlled in the range of 15 to 20 ° C. by the vessel. Thus, the polishing temperature of the semiconductor wafer W is ensured by maintaining the surface temperature of the polishing pad 16 at 20 ° C. or lower during polishing of the semiconductor wafer W during operation of the CMP apparatus 1.
On the other hand, when the surface temperature of the rotating platen 17 where the cooling water is stopped is maintained at about 23 ° C., when cooling water having a temperature of about 15 to 20 ° C. is supplied and circulated at 5 L / min, the rotation constant is maintained. As shown in FIG. 6, it is known that the surface temperature of the board 17 decreases to 15 ° C. and stabilizes in about 22 minutes from the start of supply.

In this embodiment, in the standby mode in the stopped state, the cooling work of the rotating surface plate 17 by the cooling water pipe 21 is stopped, the cooling water is supplied immediately before operation, and the surface temperature of the rotating surface plate 17 is about 15 ° C. during operation. To stabilize. Therefore, an operation signal is output from the operation control means 31 so as to open the cooling water flow rate adjustment valve 22 in a range of at least 22 minutes to 30 minutes before the resumption of operation. Thereby, the cooling water can be supplied to the support portion 20 through the cooling water pipe 21 and the supply of the cooling water can be started.
As a result, the amount of cooling water throughout the year in the standby mode could be reduced by approximately 38%. In calculating this numerical value, the average operating time ratio of the CMP apparatus 1 throughout the year is set to 60% on the basis of the information from the customer, and the daily operation pattern is 24 hours × 0.6 = 14.4 hours. A polishing operation is assumed. As a result, since 14.9 hours obtained by adding 0.5 hours before polishing is the net cooling water supply time, the reduction rate is (24 hours-14.9 hours) / 24 hours = 0.38. Moreover, since the cooling water supply is stopped during the standby time, the total amount of cooling water during the standby period can be reduced by 1.27 kW (28.6%) from FIG.

  As described above, when the CMP apparatus 1 is stopped, the exhaust ducts 6 and 7 continuously perform the exhaust operation by maintaining the pressure in the polishing unit 2 and the cleaning unit 3 at a low pressure that is lower than the external pressure by a predetermined pressure. By intermittently exhausting the inside of the polishing unit 2 and the cleaning unit 3 and maintaining the pressure at a low pressure from the outside, mist and polishing powder floating inside, volatilized cleaning liquid and mist, etc. flow out to the outside. The clean air taken in from the outside of the CMP apparatus 1 can be prevented to prevent contamination of the external environment, and the clean air taken in and the exhaust power can be reduced.

  The CMP apparatus 1 according to the present embodiment may be used as a part of the semiconductor manufacturing apparatus engineering system or as a part of the semiconductor manufacturing apparatus, and the utility of the semiconductor manufacturing apparatus engineering system or the semiconductor manufacturing apparatus as a whole. Reduction of consumption can be achieved, and reduction of energy consumption can be achieved from the viewpoints of resource saving, energy saving, environmental conservation and the like.

By the way, according to one embodiment of the present invention, an equipment engineering system of a semiconductor manufacturing apparatus and a polishing apparatus can be constructed. Conventionally, semiconductor device manufacturers have promoted higher integration of semiconductor devices, finer wiring, patterns, and larger wafer diameters in order to improve the performance of manufactured products (products) and reduce manufacturing costs. However, there are certain limits to the cost reduction of components and devices alone.
Therefore, in order to further reduce the cost in the future, it can be said that a measure for reducing the manufacturing cost through the entire manufacturing equipment system including the mutual interface between the semiconductor manufacturing apparatuses is required. The apparatus engineering system, that is, the semiconductor engineering system provided by the embodiment of the present invention is not limited to the utility reduction in the polishing apparatus, and further optimizes the utility consumption of all the various semiconductor manufacturing apparatuses used in the pre-process and post-process. It is to become. As a result, not only the utility reduction of the polishing apparatus alone but also the utility reduction of the entire semiconductor manufacturing system can be achieved synergistically.

Here, an example of a semiconductor manufacturing apparatus engineering system (ESS) in the present invention will be described below.
In the present invention, one host computer 301 is provided for a plurality of polishing apparatuses (CMP apparatus 1) 401, 402, 403, and this host computer 301 always optimizes the individual polishing apparatuses 402 to 403 and overall utility consumption. Specific polishing schedules are consistently performed. For example, FIG. 7 shows an example in which the host computer 301 optimizes the utilities of the three polishing apparatuses 401 to 403. Here, the utility amount in each polishing apparatus is always sensed by the usage monitoring system in each polishing apparatus 401 to 403, and this raw data is sent to the host computer 301 (the raw data S1 is sent from the polishing apparatus 401). The raw data S3 is transmitted from the polishing apparatus 402 and the raw data S5 is transmitted from the polishing apparatus 403 to the host computer 301). Then, the host computer 301 refers to the target data R in the database 302, compares this data R with the raw data S1, S3, and S5 from the polishing apparatuses 401 to 403, respectively, and controls the control signals S2, S4, and S6. Is generated.

Then, this control signal is transmitted to each of the polishing apparatuses 401 to 403, whereby the utility consumption of each of the polishing apparatuses 401 to 403 and the total amount of utility consumption of all of the polishing apparatuses 401 to 403 approach the initially set target. Is feedback controlled.
In general, the amount of wafer polishing is determined by how much of the resulting wafer is produced (depending on market needs). However, when the utility amount is determined in advance, for example, the amount of power used may be determined, and the amount of the wafer as a result of polishing may be determined accordingly. In such a case, according to the present invention, it is possible to appropriately stop or start some of the plurality of polishing apparatuses according to the amount of utility used. Since the utility usage amount has a large influence on the production cost, when the manufacturing cost is limited in advance, the operation of adjusting the production amount of the object to be polished accordingly is facilitated by the present invention. As a specific example, the following operation can be performed in FIG.

  In FIG. 7, the host computer 301 determines the usage amount as a total of the utility amount, and accordingly determines the target operating / non-operating time for each polishing apparatus. This generated data is stored. Next, when the polishing process is started in the semiconductor factory, the utility amount of each polishing apparatus 401 to 403 is measured in-situ by the sensor, and the sensed signal is transmitted to the host computer 301 and monitored. Further, by comparing the reference data stored in the database (the target utility amount as an initial value determined from the operation / non-operation of each device) with the monitored data, all the polishing devices are equally The total amount of utilities consumed in 401 to 403 is feedback controlled. As described above, it is possible to enable an effective operation of the entire system to secure a desired throughput while suppressing the utility consumption of the system having the plurality of polishing apparatuses 401 to 403 to a predetermined value. In the present embodiment, an example including three polishing apparatuses 401 to 403 is shown, but the number of polishing apparatuses is not limited thereto.

Furthermore, FIG. 8 shows an example of a large-scale semiconductor manufacturing apparatus engineering system (ESS) in which a manufacturing processing apparatus including a manufacturing apparatus (film forming, etching apparatus, drawing apparatus) other than the polishing apparatus is combined in the present invention.
In the present invention, one host computer 301 is provided for a plurality of semiconductor manufacturing apparatuses 1001, 1002, and 1003 including a polishing apparatus, and the host computer 301 includes each of a plurality of semiconductor manufacturing apparatuses including the polishing apparatus and the entire apparatus. Optimize total utility consumption at FIG. 8 shows an example in which the host computer 301 optimizes utility consumption of a plurality of semiconductor manufacturing apparatuses 1001 to 1003 including a polishing apparatus. Here, the utility amount in each of the semiconductor manufacturing apparatuses 1001 to 1003 is always sensed by the usage monitoring system in each polishing apparatus, and this raw data is sent to the host computer 301 (the raw data S1 from the manufacturing apparatus 1001). 'Is sent to the host computer 301 as raw data S3' from the manufacturing apparatus 1002 and raw data S5 'from the polishing apparatus 1003).

  Then, the host computer 301 refers to the data R in the database 302, compares this reference data R with the raw data S1 ′, S3 ′, S5 ′ of each device, and controls the control signals S2 ′, S4 ′, S6. 'Is generated and transmitted to each device, and the utility amount of each device is feedback controlled. Examples of semiconductor manufacturing apparatuses 1001 and 1002 include various apparatuses for so-called pre-process and post-process including, for example, an exposure apparatus, a coater & developer apparatus, an etching apparatus, a heat treatment apparatus, a cleaning apparatus, a CVD apparatus, a sputtering apparatus, and an appearance inspection apparatus. Is applicable. These devices may be singular or plural. Further, the polishing apparatus 1003 here may be singular or plural. If comprised in this way, since the utility consumption of the whole factory can be controlled appropriately, the cost of the whole manufacturing process can be reduced in total. In this example, one host computer 301 is provided for each semiconductor manufacturing apparatus. However, a system as a host computer can be configured by two or more computers.

  In the above-described CMP apparatus 1, the polishing unit 2, the cleaning unit 3, and the transfer unit 5 are partitioned into separate rooms when exhausting. However, the whole may be configured as one room and exhausted integrally. Good. The interior of the room may be evacuated and controlled to a low pressure as a whole.

1 CMP equipment (chemical / mechanical polishing equipment, polishing equipment)
2 Polishing section 3 Cleaning section 4, 4a, 4b Cassette 5 Transport section 6, 7 Exhaust duct 8, 9 Exhaust flow rate adjustment valve
11, 12, 12a, 12b Rinsing water supply pipes 13, 14 Rinsing water flow rate adjustment valve 16 Polishing pad 17 Rotating surface plate 24, 29 Pressure transducers 26, 27 Sponge rollers for cleaning 28 Transport robot 31 Operation control means 301 Host computer 302 Database (database storage device)
401, 402, 403 Polishing apparatus 1001, 1002, 1003 Semiconductor manufacturing apparatus S1, S3, S5, S1 ', S3', S5 'Raw data S2, S4, S6, S2', S4 ', S6' Control signal W Wafer R Target data, reference data

Claims (14)

A polishing pad is attached to a rotatable rotating platen, and the substrate is held between the polishing pad and the top ring, and processing is performed while supplying pure water or / and ultrapure water onto the polishing pad. A substrate processing apparatus,
A supply pipe for supplying the pure water or / and ultrapure water to the polishing pad, an opening / closing control means for controlling opening / closing of the supply pipe, and an operation control means for opening / closing the opening / closing control means intermittently or continuously. The substrate processing apparatus is characterized in that pure water or / and ultrapure water is intermittently supplied so that the polishing pad can maintain a wet state. A substrate processing apparatus for cleaning a substrate by a cleaning unit and performing a cleaning process while supplying pure water and / or ultrapure water to the cleaning unit,
A supply pipe for supplying the pure water or / and ultrapure water to the cleaning means, an open / close control means for controlling opening / closing of the supply pipe, and an operation control means for opening / closing the open / close control means intermittently or continuously. The substrate processing apparatus is characterized in that pure water or / and ultrapure water is intermittently supplied so that the cleaning means can maintain a wet state. Satisfying the following formulas (1) and (2), where the pure water or / and ultrapure water supply interval is t minutes and the pure water or / and ultrapure water supply duration is dt seconds. The substrate processing apparatus according to claim 1 or 2, wherein
dt = 20 {1.6−exp (−0.01783t)} (1)
10 ≦ t ≦ 30 (2)   4. The substrate processing apparatus according to claim 1, wherein the substrate is a semiconductor wafer.   5. The substrate processing apparatus according to claim 2, wherein the cleaning unit is a cleaning sponge roller.     A semiconductor manufacturing apparatus comprising a CMP apparatus as the substrate processing apparatus according to claim 1.     6. A semiconductor manufacturing apparatus engineering system comprising a CMP apparatus as the substrate processing apparatus according to claim 1. The substrate is held between a polishing pad and a top ring provided on a rotatable rotating platen and rotated relative to each other, and pure water or / and ultrapure water is supplied onto the polishing pad, whereby the substrate is A substrate processing method for processing,
In the substrate processing stop state, the polishing pad is wet by intermittently opening the pure water and / or ultra pure water supply pipe and supplying pure water or / and ultra pure water to the polishing pad. The substrate processing method characterized by being able to maintain this. A substrate processing method for cleaning a substrate with a cleaning means while supplying pure water and / or ultrapure water to the cleaning means,
In the substrate processing stop state, the cleaning means is wet by intermittently opening the pure water or / and ultra pure water supply pipe and supplying pure water or / and ultra pure water to the cleaning means. The substrate processing method characterized by being able to maintain this. Satisfying the following formulas (1) and (2), where the pure water or / and ultrapure water supply interval is t minutes and the pure water or / and ultrapure water supply duration is dt seconds. The substrate processing method according to claim 8 or 9, wherein the substrate processing method is performed.
dt = 20 {1.6−exp (−0.01783t)} (1)
10 ≦ t ≦ 30 (2) A polishing pad is attached to a rotatable rotating platen, and the substrate is held between the polishing pad and the top ring, and processing is performed while supplying pure water or / and ultrapure water onto the polishing pad. An exhaust device for a substrate processing apparatus,
A pressure transducer provided in the substrate processing apparatus for detecting an internal pressure;
An exhaust duct for exhausting the interior of the substrate processing apparatus;
An exhaust flow rate adjusting valve that is provided in the exhaust duct and controls the opening and closing of the exhaust duct and the exhaust amount;
It is determined whether or not the differential pressure between the internal pressure and the external pressure detected by the pressure transducer is within a predetermined range, and when the differential pressure is smaller than the predetermined range, the exhaust flow rate adjustment valve is opened. An exhaust apparatus for a substrate processing apparatus, wherein the inside of the substrate processing apparatus is exhausted. An exhaust apparatus for a substrate processing apparatus, comprising a cleaning means for cleaning a substrate using a cleaning agent, wherein the cleaning means is processed while supplying pure water and / or ultrapure water,
A pressure transducer provided in the substrate processing apparatus for detecting an internal pressure;
An exhaust duct for exhausting the interior of the substrate processing apparatus;
An exhaust flow rate adjusting valve that is provided in the exhaust duct and controls the opening and closing of the exhaust duct and the exhaust amount;
It is determined whether or not the differential pressure between the internal pressure and the external pressure detected by the pressure transducer is within a predetermined range, and when the differential pressure is smaller than the predetermined range, the exhaust flow rate adjustment valve is opened. An exhaust apparatus for a substrate processing apparatus, wherein the inside of the substrate processing apparatus is exhausted.   The exhaust apparatus for a substrate processing apparatus according to claim 11 or 12, wherein the predetermined range is a range of -30 Pa to -12.5 Pa. In a system for manufacturing a semiconductor having a first semiconductor manufacturing apparatus, a second semiconductor manufacturing apparatus, and a polishing apparatus,
Monitoring the utility amount in the first semiconductor manufacturing apparatus, the second semiconductor manufacturing apparatus and the polishing apparatus, comparing the reference data with the utility amount of each apparatus, and generating a control signal;
Accordingly, the system includes a host computer that feedback-controls utility amounts of the first semiconductor manufacturing apparatus, the second semiconductor manufacturing apparatus, and the polishing apparatus.

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