TW201842541A - Substrate processing method and substrate processing device operating method - Google Patents

Abstract

The present invention relates to a method for diminishing the peak power of a substrate processing device. In addition, the present invention relates to a substrate processing device operating method for processing a substrate such as a wafer. The substrate processing method comprises: calculating the expected polishing time from a polishing recipe; calculating the expected washing time from a washing recipe; calculating a polishing throughput index value by dividing the expected polishing time by the number of polishing units within a polishing section; calculating a washing throughput index value by dividing the expected washing time by the number of washing lanes inside a washing section; and lowering the set value for the operation acceleration of a washing-side substrate transport system if the polishing throughput index value is greater than the washing throughput index value, while lowering the set value for the operation acceleration of a polishing-side substrate transport system if the washing throughput index value is greater than the polishing throughput index value.

Description

 Substrate processing method and operation method of substrate processing apparatus  

The present invention relates to a method of processing a substrate of a wafer or the like, and more particularly to a method for reducing peak power of a substrate processing apparatus. Further, the present invention relates to a method of operating a substrate processing apparatus for processing a substrate such as a wafer.

The substrate processing apparatus is a composite processing apparatus which can polish and wash a plurality of substrates and further dry them. The substrate processing apparatus consumes a certain amount of power when one substrate is processed. In particular, when a plurality of substrates are processed at the same time, the peak power and power consumption increase because the processing load is increased.

The twenty-second figure shows a graph of the power required by the substrate processing apparatus. In the twenty-second diagram, the vertical axis represents electric power [W] consumed by the substrate processing apparatus, and the horizontal axis represents time [sec]. A plurality of substrates are sequentially carried into the polishing portion of the substrate processing apparatus, and are sequentially polished. Further, the polished substrate is sequentially carried into the washing portion of the substrate processing apparatus, and washed and dried in order. It is understood from the graph shown in Fig. 16 that the power required for the substrate processing apparatus periodically fluctuates depending on the processing operation of the substrate. In particular, when processing the maximum number of substrates, the peak power becomes large and consumes a lot of power.

[Previous Technical Literature]

[Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open No. Hei 9-56068

[Patent Document 2] Japanese Patent No. 5927223

Accordingly, it is an object of the present invention to provide a substrate processing method that can reduce peak power of a substrate processing apparatus. Further, it is an object of the present invention to provide a method of operating a substrate processing apparatus which can reduce power consumption of a substrate processing apparatus.

One aspect provides a substrate processing method characterized in that an expected polishing time is calculated from a polishing processing program for polishing a substrate, and an expected cleaning time is calculated from a cleaning processing program for cleaning the substrate, and the expected polishing time is divided. Calculating the polishing processing amount index value by the number of polishing units in the polishing unit, and dividing the expected cleaning time by the number of cleaning paths in the cleaning unit to calculate a cleaning processing amount index value, and comparing the polishing processing amount index value with the aforementioned When the polishing processing amount index value is larger than the cleaning processing amount index value, the setting value of the operating acceleration of the cleaning side substrate transfer system is lowered, and the cleaning processing amount index value is larger than the polishing processing amount. When the index value is large, the set value of the operating acceleration of the polishing-side substrate transfer system is lowered.

In a case where the polishing processing amount index value is larger than the cleaning processing amount index value, the setting value of the operating acceleration of the cleaning side substrate transfer system is lowered, and the set value of the operating speed of the cleaning side substrate transfer system is lowered. When the cleaning processing amount index value is larger than the polishing processing amount index value, the setting value of the operating acceleration of the polishing-side substrate transfer system is lowered, and the set value of the operating speed of the polishing-side substrate transfer system is lowered.

A mode of providing a substrate processing method is characterized in that the waiting polishing time of the substrate carried in the polishing portion is counted, and the waiting washing time of the substrate carried in the cleaning portion is counted, and the waiting grinding time and the waiting washing time are compared. When the waiting polishing time is longer than the waiting for washing time, the setting value of the operating acceleration of the cleaning side substrate transfer system is lowered, and when the waiting cleaning time is longer than the waiting polishing time, the operation acceleration of the polishing side substrate transfer system is lowered. Set value.

In one aspect, when the waiting polishing time is longer than the waiting for washing time, the set value of the operating acceleration of the cleaning side substrate transfer system is lowered, and the set value of the operating speed of the cleaning side substrate transfer system is lowered, and the waiting for washing is performed. When the net time is longer than the waiting polishing time, the set value of the operation acceleration of the polishing-side substrate transfer system is lowered, and the set value of the operation speed of the polishing-side substrate transfer system is lowered.

In one aspect, the waiting polishing time is a delay time from the start operation time to the actual start operation time of the polishing side substrate transfer system, and the waiting washing time is a start operation time assumed by the cleaning side substrate transfer system to the actual time. The delay time at which the action is started.

A mode of providing a substrate processing method is characterized in that: when the power required for the substrate processing operation by the substrate processing device is lower than a preset cutting level (Cut Level), the power is supplied from the commercial power source to the battery, and the substrate is processed. The apparatus processes a plurality of substrates, and when the power required for the substrate processing operation is higher than the cutting level in the plurality of substrate processing, the power corresponding to the cutting level is supplied from the commercial power source to the power of the substrate processing apparatus, and is equivalent to The electric power required to differ between the electric power and the cutting level in the substrate processing operation is supplied from the battery to the power source of the substrate processing apparatus.

A mode of providing a substrate processing method is characterized in that a plurality of substrates are polished by a first polishing unit, and when the plurality of substrates are not polished by the first polishing unit, the other plurality of substrates are ground by the second polishing unit.

A method for operating a substrate processing apparatus is characterized in that a mode of operation of a substrate processing unit is switched from a standby mode to a processing mode, and the substrate is processed by the substrate processing unit, and after the substrate processing is completed, the substrate is processed. The operation mode of the part is switched from the processing mode to the standby mode, and the power path to at least one of the motors of the substrate processing unit is cut off.

In one aspect, the at least one motor includes a stage motor for rotating a polishing table for polishing the substrate, and a head motor for rotating the polishing head for polishing the substrate.

In one aspect, the at least one motor includes a drive motor for transporting the substrate.

In one aspect, the at least one motor includes a washer motor that is used for cleaning the cleaning unit of the substrate.

In one aspect, after the substrate processing is completed, a step of cutting the power path of the drive motor of the loader for loading the substrate into the substrate processing unit is further included.

In one aspect, the substrate processing unit is a polishing unit for polishing a substrate or a cleaning unit for cleaning a substrate.

In one aspect, after the substrate processing is completed, the method further includes a step of reducing a utility flow rate used by the substrate processing unit.

The present invention provides a method of operating a substrate processing apparatus, which is characterized in that a first common volume used in a substrate processing unit is converted into a power consumption amount to calculate a first converted power consumption amount, and a second common use of the substrate processing unit is used. The second converted power consumption is calculated by converting the volume into power consumption, and the power consumption of the substrate processing unit is calculated, and the first converted power consumption, the second converted power consumption, and the substrate processing unit are recorded. power consumption.

A mode is a graph in which the first converted power consumption, the second converted power consumption, and the power consumption of the substrate processing unit are generated.

With the present invention, the peak power of the substrate processing apparatus can be reduced.

According to the present invention, the power consumption of the substrate processing apparatus can be reduced by cutting off the power path to the motor.

1‧‧‧Shell

1a, 1b‧‧‧ partition wall

2‧‧‧Loading/Unloading Department

3‧‧‧ Grinding Department

3A~3D‧‧‧grinding unit

4‧‧‧Cleaning Department

5‧‧‧Action Control Department

6, 7‧‧‧ linear conveyor

10‧‧‧ polishing pad

10a‧‧‧Grinding surface

11‧‧‧ Lifts

12‧‧‧Swing conveyor

16A‧‧‧ head shaft

19‧‧ ‧ motor

20‧‧‧Pre-loading department

21‧‧‧Track institutions

22‧‧‧Transfer robot

30a‧‧‧Axis

30A~30D‧‧‧ grinding table

31A~31D‧‧‧ polishing head

32A~32D‧‧‧Liquid supply nozzle

33A~33D‧‧‧Finisher

34A~34D‧‧‧ atomizer

35A‧‧‧ head arm

37A‧‧ head motor

38A‧‧‧Rotary shaft

39A‧‧‧Slewing motor

41‧‧‧ Carrier

43, 46‧‧‧ elastic film

45‧‧‧ buckle

72‧‧‧ temporary stage

73A, 73B‧‧‧ first cleaning unit

74A, 74B‧‧‧Second cleaning unit

75A, 75B‧‧‧ Drying unit

77‧‧‧First transport robot

78‧‧‧Second transport robot

80‧‧‧First lifting shaft

81‧‧‧Second lifting shaft

82, 83‧‧‧Washing motor

85‧‧‧ Keep rolls

87, 88‧‧‧ Roll sponge

90‧‧‧Power Regulator

91‧‧‧Battery

92‧‧‧ Peak Cutting Department

93, 94‧‧‧Upstream flushing fluid supply nozzle

95‧‧‧Commercial power supply

96‧‧‧Power supply

97,98‧‧‧Upper cleaning liquid supply nozzle

100‧‧‧Substrate Processing Department

106‧‧‧Power-off device

109‧‧‧Power line

110, 114‧‧‧ exhaust duct

111, 115, 130, 134‧‧‧ flow control valve

113, 116, 131, 135‧‧‧ flowmeter

119‧‧‧ solar panels

121‧‧‧Battery

122‧‧‧Fan filter unit

123‧‧‧Filter

124‧‧‧Fan

125‧‧‧Fan motor

140‧‧‧Cooling water flow pipe

141‧‧‧Flow regulating valve

142‧‧‧ flowmeter

150‧‧‧Power meter

160‧‧‧Multi-axis integrated amplifier

170‧‧‧

171‧‧‧ Fluid conduit

175‧‧‧ gas-liquid separation tank

177‧‧‧Waterwheel

179‧‧‧Generator

181‧‧‧Exhaust duct

182‧‧‧Draining device

210‧‧‧ memory device

211‧‧‧Main memory device

212‧‧‧Auxiliary memory device

220‧‧‧Processing device

230‧‧‧ Input device

232‧‧‧recording medium reading device

234‧‧ Record Media

240‧‧‧output device

241‧‧‧Display device

242‧‧‧Printing device

250‧‧‧Communication device

D1, D2, D3, D4‧‧‧ pressure chamber

G1, G2, G3, G4‧‧‧ fluid pipelines

K1~K5‧‧‧ flowmeter

M1, M2, M3‧‧‧ motor

R1, R2, R3, R4‧‧‧ pressure regulator

TP1~TP7‧‧‧first to seventh transfer position

W‧‧‧Substrate

The first drawing shows a schematic view of an embodiment of a substrate processing apparatus.

The second graph mode shows a perspective view of the first grinding unit.

The third figure shows a cross-sectional view of the polishing head shown in the second figure.

The fourth picture is a side view of the washing section.

The fifth drawing shows a perspective view of an embodiment of the first cleaning unit.

The sixth drawing shows a schematic diagram of an example of a grinding processing program.

The seventh figure is a pattern diagram showing an example of the washing processing program.

Fig. 8 is a flow chart showing an embodiment of the autonomous shift control function executed by the motion control unit.

The ninth diagram is a graph showing the power required by the substrate processing apparatus that does not have the autonomous shift control function.

Fig. 10 is a graph showing the electric power required for the substrate processing apparatus of the embodiment having the autonomous shift control function.

The eleventh diagram is a flowchart illustrating an embodiment of the autonomous shift control function executed by the motion control unit.

Fig. 12 is a schematic view showing an embodiment in which the peak current of the substrate processing apparatus can be reduced.

The thirteenth figure shows a graph of the power consumption of four grinding units.

Fig. 14 is a graph showing the total power consumed by the four grinding units shown in Fig. 13.

The fifteenth diagram is a schematic view showing an embodiment in which the peak current of the substrate processing apparatus can be reduced.

Fig. 16 is a side view showing the substrate processing apparatus shown in Fig. 1 .

The seventeenth figure is a graph of power consumption and conversion power consumption.

Fig. 18 is a schematic view showing another embodiment for reducing the power consumption of the substrate processing apparatus.

Fig. 19 is a schematic view showing another embodiment for reducing the power consumption of the substrate processing apparatus.

Fig. 20 is a schematic view showing another embodiment for reducing the power consumption of the substrate processing apparatus.

The twenty-first figure is a schematic diagram showing the configuration of the motion control unit.

The twenty-second figure shows a graph of the power required by the substrate processing apparatus.

Hereinafter, embodiments of the present invention will be described with reference to the drawings.

The first drawing is a schematic view of an embodiment of a substrate processing apparatus for polishing a substrate such as a wafer, washing the polished substrate, and drying the cleaned substrate. As shown in the first figure, the substrate processing apparatus is provided with a casing 1 having a substantially rectangular shape, and the inside of the casing 1 is divided into a loading/unloading unit 2, a polishing unit 3, and a cleaning unit 4 by partition walls 1a and 1b. The substrate processing apparatus has an operation control unit 5 that controls the substrate processing operation.

The loading/unloading unit 2 includes a front loading unit 20 in which a substrate cartridge that houses a plurality of substrates (for example, wafers) is placed. In the loading/unloading unit 2, a rail mechanism 21 is disposed along the arrangement of the front loading unit 20, and a transport robot (loader) 22 that is movable in the direction in which the substrate cartridges are arranged is provided in the rail mechanism 21. The transport robot 22 can move into the substrate cassette mounted on the front loading unit 20 by moving on the rail mechanism 21. Furthermore, the transport robot 22 can be configured to rise and fall. The transport robot 22 is provided with a drive motor (not shown) as a power source.

The polishing unit 3 has a plurality of polishing units that can polish a plurality of substrates in parallel. The polishing unit 3 of the present embodiment includes a first polishing unit 3A, a second polishing unit 3B, a third polishing unit 3C, and a fourth polishing unit 3D. However, the number of polishing units is not limited to this embodiment.

As shown in the first figure, the first polishing unit 3A includes a first polishing table 30A on which a polishing pad 10 having a polishing surface is mounted, and a first polishing table for polishing the substrate by pressing the polishing pad 10 on the polishing table 30A. a head 31A; a first liquid supply nozzle 32A for supplying a polishing liquid (for example, a slurry) or a conditioning liquid (for example, pure water) on the polishing pad 10; and a first trimmer 33A for performing finishing of the polishing surface of the polishing pad 10. And a first atomizer 34A that sprays a mixed fluid of a liquid (for example, pure water) and a gas (for example, nitrogen) to be sprayed on the polishing surface of the polishing pad 10.

Similarly, the second polishing unit 3B is provided with: a second polishing table 30B on which the polishing pad 10 is mounted, a second polishing head 31B, a second liquid supply nozzle 32B, a second trimmer 33B, and a second atomizer 34B; The third polishing unit 3C is provided with: a third polishing table 30C to which the polishing pad 10 is mounted, a third polishing head 31C, a third liquid supply nozzle 32C, a third trimmer 33C, and a third atomizer 34C; The unit 3D is provided with a fourth polishing table 30D to which the polishing pad 10 is mounted, a fourth polishing head 31D, a fourth liquid supply nozzle 32D, a fourth trimmer 33D, and a fourth atomizer 34D.

The first polishing unit 3A, the second polishing unit 3B, the third polishing unit 3C, and the fourth polishing unit 3D have the same configuration. Hereinafter, the first polishing unit 3A will be described with reference to the second drawing. The second diagram mode shows a perspective view of the first polishing unit 3A. Further, the trimmer 33A and the atomizer 34A are omitted in the second drawing.

The polishing table 30A is coupled to the stage motor 19 disposed below the table shaft 30a, and the polishing table 30A is rotatable in the direction indicated by the arrow by the stage motor 19. A polishing pad 10 is bonded to the upper surface of the polishing table 30A, and the upper surface of the polishing pad 10 constitutes a polishing surface 10a of the polishing substrate W. The polishing head 31A is coupled to the lower end of the head shaft 16A. The polishing head 31A is configured to hold the substrate W underneath by vacuum suction.

The head shaft 16A is rotatably supported by the head arm 35A. A head motor 37A for rotating the head shaft 16A and the polishing head 31A around the axis thereof is fixed to the head arm 35A. The head shaft 16A is coupled to the rotating shaft of the head motor 37A directly or via a power transmission mechanism (for example, a belt or a pulley).

A swing motor 39A that rotates the entire polishing head 31A and the head arm 35A around the rotary shaft 38A is disposed in the head arm 35A. The swing motor 39A is coupled to the swing shaft 38A. By driving the turning motor 39A, the polishing head 31A can be moved between the polishing position shown in FIG. 2 and the conveyance position (described later) outside the polishing table 30A. Further, the head shaft 16A and the polishing head 31A are configured to be movable up and down by being placed in the head arm 35A in an up-and-down motion mechanism (not shown).

The polishing of the substrate W is carried out as follows. The polishing head 31A and the polishing table 30A are respectively rotated in the direction indicated by the arrow, and the polishing liquid (slurry) is supplied from the liquid supply nozzle 32A to the polishing pad 10. In this state, the polishing head 31A presses the substrate W against the polishing surface 10a of the polishing pad 10. The surface of the substrate W is ground by the mechanical action of the polishing liquid and the mechanical action of the abrasive grains contained in the polishing liquid. After the completion of the polishing, the polishing surface 10a is trimmed (adjusted) by the dresser 33A shown in the first figure, and the high-pressure fluid is further supplied from the atomizer 34A shown in the first figure to the polishing surface 10a to remove the remaining remaining on the polishing surface 10a. Grinding chips and slurry.

The third figure shows a cross-sectional view of the polishing head 31A. The polishing head 31A includes a disk-shaped carrier 41, and a circular and flexible elastic film (diaphragm) 43 of a plurality of pressure chambers D1, D2, D3, and D4 is formed under the carrier 41; and the elastic film 43 is surrounded. The buckle 45 of the polishing surface 10a of the polishing pad 10 is pressed. Pressure chambers D1, D2, D3, D4 are formed between the elastic film 43 and the lower surface of the carrier 41. The carrier 41 is fixed to the lower end of the head shaft 16A.

The elastic film 43 has a plurality of annular partition walls 43a, and the pressure chambers D1, D2, D3, and D4 are isolated from each other by the partition walls 43a. The central pressure chamber D1 is circular, while the other pressure chambers D2, D3, and D4 are annular. These pressure chambers D1, D2, D3, and D4 are arranged in a concentric shape. The number of pressure chambers is not particularly limited, and the polishing head 31A may have more than four pressure chambers.

The pressure chambers D1, D2, D3, D4 are connected to the fluid lines G1, G2, G3, G4, and the pressurized fluid (for example, pressurized air) is supplied to the pressure chambers D1, D2, D3 through the fluid lines G1, G2, G3, G4. , D4. Pressure regulators R1, R2, R3, and R4 are attached to the fluid lines G1, G2, G3, and G4, respectively. The pressure regulators R1, R2, R3, R4 independently adjust the pressure of the pressurized fluid in the pressure chambers D1, D2, D3, D4. Thereby, the polishing head 31A can polish the four regions corresponding to the substrate W, that is, the center portion, the inner middle portion, the outer middle portion, and the peripheral portion, in the same polishing load or different polishing load.

An annular elastic film 46 is disposed between the buckle 45 and the carrier 41. An annular pressure chamber D5 is formed inside the elastic film 46. The pressure chamber D5 is connected to the fluid line G5, and a pressurized fluid (for example, pressurized air) is supplied into the pressure chamber D5 through the fluid line G5. A pressure regulator R5 is installed in the fluid line G5. The pressure of the pressurized fluid in the pressure chamber D5 is regulated by a pressure regulator R5. The pressure in the pressure chamber D5 is applied to the buckle 45, and the buckle 45 can directly press the polishing surface 10a of the polishing pad 10 independently of the elastic film (diaphragm) 43. Flow meters K1, K2, K3, K4, and K5 are attached to the fluid lines G1, G2, G3, G4, and G5, respectively.

During the polishing of the substrate W, the elastic film 43 presses the substrate W against the polishing surface 10a of the polishing pad 10, and the buckle 45 presses the polishing surface 10a of the polishing pad 10 around the substrate W. The polishing heads 31B to 31D also have the same configuration as the polishing head 31A, but are not shown.

Returning to the first figure, the first linear conveyor 6 is disposed adjacent to the first polishing unit 3A and the second polishing unit 3B. The first linear transporter 6 is a transport robot that transports the substrates between the four transport positions (the first transport position TP1, the second transport position TP2, the third transport position TP3, and the fourth transport position TP4). Further, a second linear conveyor 7 is disposed adjacent to the third polishing unit 3C and the fourth polishing unit 3D. The second linear transporter 7 is a transport robot that transports the substrates between the three transport positions (the fifth transport position TP5, the sixth transport position TP6, and the seventh transport position TP7). The first linear conveyor 6 and the second linear conveyor 7 are provided with a drive motor (not shown) as a power source.

The substrate is transported to the first polishing unit 3A and/or the second polishing unit 3B by the first linear conveyor 6. The polishing head 31A of the first polishing unit 3A moves between the position above the polishing table 30A and the second transfer position TP2 by the rocking motion. Therefore, the transfer of the substrate between the polishing head 31A and the first linear conveyor 6 is performed at the second transfer position TP2.

Similarly, the polishing head 31B of the second polishing unit 3B moves between the position above the polishing table 30B and the third transfer position TP3, and the substrate is in the polishing head 31B and the first linear transfer machine at the third transfer position TP3. The handover between 6. The polishing head 31C of the third polishing unit 3C moves between the upper position of the polishing table 30C and the sixth transfer position TP6, and the substrate is transferred between the polishing head 31C and the second linear transfer machine 7 at the sixth transfer position TP6. . The polishing head 31D of the fourth polishing unit 3D moves between the position above the polishing table 30D and the seventh transfer position TP7, and the substrate is transferred between the polishing head 31D and the second linear conveyor 7 at the seventh transfer position TP7. . The polishing heads 31A, 31B, 31C, and 31D also function as a substrate transfer device that transports the substrate between the polishing position on the polishing pad 10 and the transfer positions TP2, TP3, TP6, and TP7.

The elevator 11 for receiving a board|substrate from the conveyance robot 22 is arrange|positioned by the 1st conveyance position TP1. The elevator 11 is disposed between the transfer robot 22 and the first linear conveyor 6. The substrate is sent from the transfer robot 22 to the first linear conveyor 6 via the elevator 11 . Between the elevator 11 and the transport robot 22, a shutter (not shown) is provided on the partition wall 1a, and when the substrate is transported, the shutter is opened, and the substrate can be delivered from the transport robot 22 to the elevator 11.

A swing conveyor 12 for transporting a substrate transfer robot is disposed between the first linear conveyor 6, the second linear conveyor 7, and the cleaning unit 4. The transfer of the substrate from the first linear conveyor 6 to the second linear conveyor 7 is performed by the sway conveyor 12. The substrate is transported to the third polishing unit 3C and/or the fourth polishing unit 3D by the second linear conveyor 7.

A substrate temporary stage 72 provided on a frame (not shown) is disposed on the side of the swing conveyor 12. The temporary stage 72 is disposed adjacent to the first linear conveyor 6 as shown in the first figure, and is located between the first linear conveyor 6 and the cleaning unit 4. The swing conveyor 12 transports the substrate between the fourth transport position TP4, the fifth transport position TP5, and the temporary stage 72. The rocking conveyor 12 and the temporary stage 72 are disposed in the polishing unit 3. The swing conveyor 12 is provided with a drive motor (not shown) as a power source.

The transport robot 22, the polishing heads 31A to 31D, the linear transporters 6 and 7, and the rocking conveyor 12 constitute a polishing-side substrate transport system that carries the substrate into the polishing unit 3 and transports the substrate in the polishing unit 3. The operation of the polishing-side substrate transfer system is controlled by the operation control unit 5.

The cleaning unit 4 includes first cleaning units 73A and 73B and second cleaning units 74A and 74B for cleaning the polished substrate, and drying units 75A and 75B for drying and cleaning the substrate. The first cleaning unit 73A is disposed above the first cleaning unit 73B, and the second cleaning unit 74A is disposed above the second cleaning unit 74B. The drying unit 75A is disposed above the drying unit 75B.

The cleaning unit 4 further includes a first transfer robot 77 and a second transfer robot 78 for transporting substrates. The substrate placed on the temporary stage 72 is carried into the cleaning unit 4 by the first transfer robot 77. The first transfer robot 77 is disposed between the first cleaning units 73A and 73B and the second cleaning units 74A and 74B. The first transfer robot 77 operates to transport the substrate from the temporary stage 72 to the first cleaning unit 73A or the first cleaning unit 73B. The second transfer robot 78 is disposed between the second cleaning units 74A and 74B and the drying units 75A and 75B.

The fourth drawing is a side view of the washing portion 4. As shown in the fourth figure, the first cleaning unit 73A is disposed above the first cleaning unit 73B, and the second cleaning unit 74A is disposed above the second cleaning unit 74B. The drying unit 75A is disposed above the drying unit 75B. The first transfer robot 77 is supported by the first lift shaft 80 and is configured to be movable up and down on the first lift shaft 80. The second transfer robot 78 is supported by the second lift shaft 81 and is configured to be movable up and down on the second lift shaft 81.

The first transfer robot 77 operates to transport the substrate from the first cleaning unit 73A or the first cleaning unit 73B to the second cleaning unit 74A or the second cleaning unit 74B. The second transfer robot 78 operates to transport the substrate from the second cleaning unit 74A or the second cleaning unit 74B to the drying unit 75A or the drying unit 75B. The first transfer robot 77 and the second transfer robot 78 of the present embodiment constitute a cleaning side substrate transfer system that transports the substrate in the cleaning unit 4. The operation of the cleaning side substrate transfer system is controlled by the operation control unit 5 shown in the first figure.

Since the cleaning unit 4 includes two first cleaning units 73A and 73B, two second cleaning units 74A and 74B, and two drying units 75A and 75B, it is possible to configure the two substrates to be washed and dried in parallel. 2 cleaning paths. The "washing path" is a processing path in which the substrate is washed and dried by a plurality of cleaning units and drying units inside the cleaning unit 4. For example, as shown in the fourth figure, one substrate (first cleaning path) is transported in the order of the first cleaning unit 73A, the second cleaning unit 74A, and the drying unit 75A, and the first cleaning can be performed in parallel with the first cleaning unit 75A. The other unit (second cleaning path) is sequentially transferred by the unit 73B, the second cleaning unit 74B, and the drying unit 75B. In this way, the two parallel cleaning paths can wash and dry the two substrates in parallel.

In the two parallel cleaning paths, a specified time difference can also be set to wash and dry a plurality of substrates. The advantages of washing with a specified time difference are as follows. The first transfer robot 77 and the second transfer robot 78 are used in combination with a plurality of cleaning paths. Therefore, when a plurality of washing or drying processes are simultaneously completed, the transfer robot cannot transport the substrate at once, and the amount of processing is deteriorated. In order to avoid such a problem, by processing and drying a plurality of substrates with a predetermined time difference, the processed substrates can be quickly transported by the transfer robots 77 and 78.

The first cleaning units 73A and 73B and the second cleaning units 74A and 74B of the present embodiment are roll-type sponge type washing machines. The roll sponge type washing machine is configured to rotate the substrate and rotate the two roll sponges disposed above and below the substrate, and to bring the two roll sponges into contact with the upper surface and the lower surface of the substrate. In the substrate cleaning, the cleaning liquid is supplied on the upper surface and the lower surface of the substrate. The first cleaning units 73A and 73B and the second cleaning units 74A and 74B of the present embodiment have the same structure.

The fifth drawing shows a perspective view of an embodiment of the first cleaning unit 73A. As shown in the fifth figure, the first cleaning unit 73A includes four holding rollers 85 that hold the substrate W and rotates, and cylindrical roller sponges (washing tools) 87 and 88 that are in contact with the upper and lower surfaces of the substrate W; Washer motors 82 and 83 for rotating the roll sponges 87 and 88, and a rinse liquid supply nozzles 93 and 94 for supplying a rinse liquid (for example, pure water) on the upper surface of the substrate W; and supplying the cleaning on the upper surface of the substrate W. The upper side of the liquid (for example, a drug) is supplied to the nozzles 97 and 98. Further, a lower side rinsing liquid supply nozzle for supplying a rinsing liquid (for example, pure water) to the lower surface of the substrate W, and a lower side cleaning liquid supply nozzle for supplying a cleaning liquid (for example, a chemical) to the lower surface of the substrate W are provided, but there is no drawing. Show.

The holding roller 85 is movable in a direction approaching and away from the substrate W by a driving mechanism (for example, an air cylinder) (not shown). The four holding rollers 85 are rotatable in the same direction by a motor (not shown). In a state where the four holding rolls 85 hold the substrate W, the substrate W is rotated around its axis by the rotation of the holding roller 85. When the substrate W is washed, the roll sponges 87, 88 move in the approaching direction to each other, and contact the upper and lower surfaces of the substrate W. The washing tool can also use a roll brush instead of a roll sponge.

Next, the process of washing the substrate W will be described. First, the substrate W is rotated around its axis by the holding roller 85. Next, the cleaning liquid is supplied from the upper cleaning liquid supply nozzles 97 and 98 and the lower cleaning liquid supply nozzle (not shown) to the upper surface and the lower surface of the substrate W. In this state, the roll sponges 87, 88 are rotated around the axis of their horizontal extension, and the upper and lower surfaces of the substrate W are rubbed by sliding contact with the upper and lower surfaces of the substrate W.

After the friction washing, the substrate W is washed (flushed) by supplying the pure water as the rinsing liquid from the upper rinsing liquid supply nozzles 93 and 94 and the rinsing liquid supply nozzle (not shown) on the rotating substrate W. ). The rinsing of the substrate W may be performed by slidingly contacting the roll sponges 87 and 88 on the upper and lower surfaces of the substrate W, or in a state where the roll sponges 87 and 88 are separated from the upper and lower surfaces of the substrate W.

The first cleaning unit 73A, 73B or the second cleaning unit 74A, 74B of one embodiment may also be a pen-shaped sponge type washing machine. The pen sponge type washing machine is configured such that the substrate is rotated, and the pen sponge is rotated, and the pen sponge is placed on the upper surface of the substrate to further move the pen sponge in the radial direction of the substrate. In the substrate cleaning, the cleaning liquid is supplied on the substrate.

The drying unit 75A, 75B moves the pure water nozzle and the IPA nozzle in the radial direction of the substrate, and supplies pure water and IPA vapor (mixture of isopropyl alcohol and nitrogen (N ₂ )) from the pure water nozzle and the IPA nozzle to the substrate. Above, the IPA type dryer is used to dry the substrate. The drying units 75A, 75B can also be other types of dryers. For example, a spin drying type dryer that rotates the substrate at a high speed can also be used.

In the present embodiment, two first cleaning units 73A and 73B, two second cleaning units 74A and 74B, and two drying units 75A and 75B are provided. However, the present invention is not limited to the embodiment, and the first washing is performed. The net unit, the second washing unit, and the drying unit may each be three or more. In other words, more than three cleaning paths can be provided. In one embodiment, the cleaning path may be one. Further, a plurality of third cleaning units may be further provided between the second cleaning units 74A and 74B and the drying units 75A and 75B.

Next, an example of the operation of the substrate processing apparatus will be described with reference to the first drawing. The transport robot 22 takes out the substrate from the substrate cassette and delivers it to the elevator 11. The first linear conveyor 6 takes out the substrate from the elevator 11, and the substrate is conveyed to at least one of the polishing units 3A to 3D via the first linear conveyor 6 and/or the second linear conveyor 7. The substrate is polished by at least one of the polishing units 3A to 3D.

The polished substrate is transferred to the first cleaning unit 73A and the second cleaning unit 74A via the first linear conveyor 6 or the second linear conveyor 7, the sway conveyor 12, and the first transfer robot 77, and the polished substrate is polished. The first cleaning unit 73A and the second cleaning unit 74A are sequentially washed by the first cleaning unit 73A. Further, the cleaned substrate is transferred to the drying unit 75A by the second transfer robot 78, and the washed substrate is dried therein. As described above, the substrate may be transported to the first cleaning unit 73B, the second cleaning unit 74B, and the drying unit 75B.

The dried substrate is taken out from the drying unit 75A by the transfer robot 22, and returned to the substrate cassette on the front loading unit 20. The substrate is subjected to a series of processes including grinding, washing, and drying.

The operation control unit 5 stores in advance a polishing processing program and a cleaning processing program in the memory device. The polishing processing program and the cleaning processing program are created by the user through the input device of the motion control unit 5. The polishing processing program defines a management table for the operation of polishing one substrate. The substrate is polished in accordance with a polishing process.

The sixth drawing shows a schematic diagram of an example of a grinding processing program. In this example, the polishing processing program includes an operation setting item in four steps of the main polishing step, the water polishing step, the pad conditioning step, and the pad cleaning step. The main polishing step is a step of supplying a polishing liquid (slurry) to the polishing pad 10 and sliding the substrate into contact with the polishing pad 10. The water polishing step is a process of supplying pure water on the polishing pad 10 and sliding the substrate into contact with the polishing pad 10 with a low load. This water milling step is performed after the end of the main grinding step. In the water polishing step, the load applied to the substrate from the polishing head (refer to symbols 31A to 31D in the first drawing) is lower than the load applied to the substrate from the polishing head in the main polishing step, and the water polishing step does not substantially polish the substrate. .

The pad dressing step is a process of trimming (or adjusting) the polishing surface 10a of the polishing pad 10 with a dresser (reference numerals 33A to 33D) shown in the first figure. The pad conditioning step is performed after the water milling step. The pad cleaning step ejects a high-pressure fluid composed of a mixture of a gas and a liquid from the atomizer (reference numerals 34A to 34D) shown in the first figure to the polishing surface 10a of the polishing pad 10, and removes grinding debris or grinding from the polishing surface 10a. Liquid (slurry) process. The pad cleaning step is performed after the pad conditioning step.

The operation setting item includes: the position of the polishing head in each step, the processing time of each step, the rotation speed of the polishing table, the rotation speed of the polishing head, the set pressure in the pressure chamber of the polishing head, the flow rate of the polishing liquid, and the flow rate of the finishing liquid. The flow rate of the high-pressure fluid injected from the atomizer, the end of the operation of each step, and the like. The item of the action end condition of the step is an item that determines the end point of the action of the step. For example, the end point condition of the main polishing step is set to any one of the time when the processing time elapses or the time when the film thickness of the substrate reaches the target value.

The polishing processing program shown in Fig. 6 is produced by each of the polishing units 3A to 3D, and is stored in the operation control unit 5. The time required to polish one substrate, that is, the expected polishing time, can be calculated from the polishing process. That is, the expected grinding time is the sum of the processing times of the respective steps. The motion control unit 5 calculates the predicted polishing time by calculating the sum of the respective processing times set in the main polishing step, the water polishing step, the pad conditioning step, and the pad cleaning step of the polishing processing program.

The washing process program defines a management table for the operation of washing and drying one substrate. The substrate is washed and dried according to a washing process.

The seventh figure is a pattern diagram showing an example of the washing processing program. The washing processing program of this example includes an operation setting item among the three steps of the first washing step, the second washing step, and the drying step. The first washing step is a step of washing the substrate by the first cleaning unit (refer to symbols 73A and 73B of the first drawing). The second cleaning step is a step of cleaning the substrate by the second cleaning unit (refer to symbols 74A and 74B of the first drawing). The drying step is a step of drying the substrate by a drying unit (refer to symbols 75A and 75B of the first drawing). The operation setting item of the washing processing program includes the processing time of each step, the rotation speed of the substrate, and the flow rate of the cleaning liquid.

The time required to wash one substrate, that is, the expected cleaning time can be calculated from the cleaning process. That is, the expected washing time is the sum of the processing times of the respective steps. The operation control unit 5 calculates the predicted washing time by calculating the sum of the respective processing times set in the first washing step, the second washing step, and the drying step of the washing processing program.

The operation control unit 5 determines whether or not any of the operation of the polishing unit 3 or the operation of the cleaning unit 4 determines the reaction speed factor of the entire substrate processing based on the expected polishing time and the expected cleaning time, and controls the polishing unit 3 in association with it. The polishing side substrate transfer system or the cleaning side substrate transfer system related to the cleaning unit 4 is configured to have any one of the operational accelerations.

The eighth diagram is a flowchart illustrating an embodiment of the autonomous shift control function executed by the motion control unit 5. As described above, the user inputs the operation setting items of the polishing processing program and the cleaning processing program to the operation control unit 5 by using the input device of the operation control unit 5, thereby creating a polishing processing program and a cleaning processing program. The input device is a machine such as a keyboard or a mouse. The user inputs the number of polishing units of the polishing unit 3 and the number of cleaning paths of the cleaning unit 4 to the operation control unit 5 using the input device of the operation control unit 5. In one embodiment, the number of polishing units corresponds to the number of polishing stages 30A to 30D provided in the polishing unit 3, and in one embodiment, the number of polishing units corresponds to the number of polishing heads 31A to 31D provided in the polishing unit 3. The number of polishing units 3A to 3D of the embodiment shown in the first figure is 4, and the number of cleaning paths is 2.

The operation control unit 5 memorizes a polishing processing program and a cleaning processing program that are filled with the respective operation setting items in the memory device. Similarly, the operation control unit 5 memorizes the number of polishing units and the number of cleaning paths in the memory device (step 1).

The operation control unit 5 calculates an expected polishing time corresponding to one substrate from the polishing processing program, and calculates an expected cleaning time corresponding to one substrate from the cleaning processing program (step 2). More specifically, the operation control unit 5 calculates the total processing time of each step included in the polishing processing program, and calculates the total processing time of each step included in the cleaning processing program. Further, the operation control unit 5 calculates the polishing processing amount index value by dividing the expected polishing time by the number of polishing units, and calculates the cleaning processing amount index value by dividing the expected cleaning time by the number of cleaning paths (step 3). The calculation formula of the grinding treatment amount index value and the washing treatment amount index value is as follows.

Grinding capacity index value = expected grinding time / number of grinding units

Washing treatment index value = expected washing time / number of washing paths

The operation control unit 5 compares the polishing processing amount index value with the cleaning processing amount index value (step 4). When the polishing treatment amount index value is larger than the cleaning treatment amount index value, the operation of the polishing unit 3 determines the reaction speed factor. Therefore, the operation control unit 5 lowers the set value of the operational acceleration of the cleaning side substrate transport system (step 5). In one embodiment, the operation control unit 5 changes the set value of the operational acceleration of the cleaning side substrate transport system from the first standard acceleration value to the acceleration value lower than the first standard acceleration value. For example, the operation control unit 5 changes the set value of the acceleration when the first transfer robot 77 and/or the second transfer robot 78 of the cleaning unit 4 are raised from the standard acceleration value to an acceleration value lower than the standard acceleration value. The above acceleration value lower than the first standard acceleration value may also be a preset value.

In the embodiment, the operation control unit 5 can reduce the setting value of the operation acceleration of the cleaning side substrate transfer system when the polishing process amount index value is larger than the cleaning process amount index value, and can reduce the operation of the cleaning side substrate transfer system. The set value of the speed. Specifically, the operation control unit 5 may change the set value of the operational acceleration of the cleaning side substrate transport system from the first standard acceleration value to the acceleration value lower than the first standard acceleration value, and transport the cleaning side substrate. The set value of the operating speed of the system is changed from the first standard speed value to a speed value lower than the first standard speed value. For example, the operation control unit 5 may change the set value of the acceleration when the first transfer robot 77 and/or the second transfer robot 78 of the cleaning unit 4 are raised from the standard acceleration value to an acceleration value lower than the standard acceleration value. Further, the set value of the maximum speed when the first transfer robot 77 and/or the second transfer robot 78 is raised is changed from the standard speed value to a speed value lower than the standard speed value. The above speed value lower than the first standard speed value may also be a preset value.

When the washing treatment amount index value is larger than the polishing treatment amount index value, the operation of the washing unit 4 determines the reaction speed factor. Therefore, the operation control unit 5 lowers the set value of the operational acceleration of the polishing-side substrate transport system (step 6). In one embodiment, the operation control unit 5 changes the set value of the operational acceleration of the polishing-side substrate transport system from the second standard acceleration value to the acceleration value lower than the second standard acceleration value. For example, the operation control unit 5 changes the setting value of the acceleration when the transport robot (loader) 22 moves along the arrangement of the substrate cassettes in order to carry the substrate into the polishing unit 3, and changes the standard acceleration value to be lower than the standard acceleration value. The acceleration value. In another example, the set value of the acceleration of the polishing head 31A when the polishing head 31A is moved between the polishing position and the transfer position is changed from the standard speed value to an acceleration value lower than the standard speed value. The above acceleration value lower than the second standard acceleration value may also be a preset value.

In the embodiment, the operation control unit 5 can reduce the set value of the operational acceleration of the polishing-side substrate transfer system and reduce the operating speed of the polishing-side substrate transfer system when the cleaning process amount index value is larger than the polishing process amount index value. Set value. Specifically, the operation control unit 5 may change the set value of the operational acceleration of the polishing-side substrate transport system from the second standard acceleration value to the acceleration value lower than the second standard acceleration value, and may move the polishing-side substrate transport system. The set value of the operating speed is changed from the second standard speed value to a speed value lower than the second standard speed value. For example, the operation control unit 5 may change the setting value of the acceleration when the transfer robot (loader) 22 for moving the substrate into the polishing unit 3 moves along the arrangement of the substrate cassette, and change the standard acceleration value to be higher than the standard. The acceleration value having a low acceleration value further changes the set value of the maximum speed when the transfer robot (loader) 22 moves along the arrangement of the substrate cassettes, and changes the standard speed value to a speed value lower than the standard speed value. The above speed value lower than the second standard speed value may also be a preset value.

Therefore, the operation control unit 5 includes an autonomous shift control function that reduces the set value of any one of the operation acceleration (and the operation speed) of the polishing-side substrate transfer system or the cleaning-side substrate transfer system in accordance with the reaction speed factor determined by the substrate processing. By such an autonomous shift control function, the power demand of the substrate processing apparatus can be reduced, and the peak power can be reduced.

The ninth diagram is a graph showing the necessity of the power of the substrate processing apparatus not having the autonomous shift control function, and the tenth is a graph showing the power required by the substrate processing apparatus of the present embodiment having the autonomous shift control function. From the comparison of the graphs shown in the ninth and tenth graphs, it is understood that the substrate processing apparatus having the autonomous shift control function can reduce the peak power consumed by the substrate processing apparatus.

Next, another embodiment of the autonomous shift control function of the operation control unit 5 will be described. In the present embodiment, the operation control unit 5 counts the waiting polishing time of the substrate and the waiting for washing time of the substrate, and determines the operation of the polishing unit 3 or the cleaning unit 4 based on the comparison between the waiting polishing time and the waiting for cleaning time. The reaction rate factor for controlling the entire processing of any one of the substrates is controlled by any one of the polishing side substrate transport system associated with the polishing unit 3 or the cleaning side substrate transport system associated with the cleaning unit 4. The way it is structured.

The waiting polishing time is a delay time from the start of the operation of the polishing-side substrate transfer system to the actual start of the operation time. For example, the polishing robot (loader) 22 cannot carry the next substrate into the polishing unit 3 because the polishing of the previous substrate is slow. In this case, the operation control unit 5 starts counting (Count) the delay time from the start operation timing assumed by the transport robot 22. Then, the operation control unit 5 stops the counting (Count) delay time when the transport robot 22 actually starts operating. The delay time from the start of the operation to the actual start of the operation is waiting for the polishing time.

Similarly, the waiting for washing time is a delay time from the start operation timing of the cleaning side substrate transfer system to the actual start operation time. For example, the first transfer robot 77 cannot carry the next substrate into the cleaning unit 4 due to the slow cleaning of the previous substrate. In this case, the operation control unit 5 starts counting (Count) the delay time from the start of the operation timing assumed by the first transfer robot 77. Then, the operation control unit 5 stops the counting (Count) delay time when the first transfer robot 77 actually starts operating. The delay time from the start of the operation to the actual start of the operation is to wait for the cleaning time.

The expected polishing time and the expected cleaning time in the previously described embodiments are sometimes different from the actual polishing time and the actual cleaning time. For example, in the polishing processing program shown in FIG. 6, when the operation end point condition of the main polishing step is set to the time when the substrate film thickness reaches the target value, the actual polishing time can be changed depending on the initial film thickness of the substrate. When the polishing of the previous substrate is not completed, the next substrate cannot be carried into the polishing portion 3, and as a result, the waiting for the polishing time can be changed. Similarly, when the cleaning of the previous substrate is not completed, the next substrate cannot be carried into the cleaning unit 4, and as a result, the waiting for washing time can be changed.

The eleventh diagram is a flowchart illustrating an embodiment of the autonomous shift control function executed by the motion control unit 5. The operation control unit 5 counts the waiting for the polishing time and waits for the cleaning time (step 1). The operation control unit 5 compares the waiting for the polishing time with the waiting for the cleaning time (step 2). When the waiting polishing time is longer than the waiting for washing time, the operation of the polishing unit 3 determines the reaction speed factor. Therefore, the operation control unit 5 lowers the set value of the operational acceleration of the cleaning side substrate transport system (step 3). In one embodiment, the operation control unit 5 changes the set value of the operational acceleration of the cleaning side substrate transport system from the first standard acceleration value to the acceleration value lower than the first standard acceleration value. For example, the operation control unit 5 changes the set value of the acceleration when the first transfer robot 77 and/or the second transfer robot 78 of the cleaning unit 4 are raised from the standard acceleration value to an acceleration value lower than the standard acceleration value. The above acceleration value lower than the first standard acceleration value may also be a preset value.

In the embodiment, the operation control unit 5 can reduce the set value of the operational acceleration of the cleaning side substrate transport system and reduce the set value of the operating speed of the cleaning side substrate transport system when the waiting polishing time is longer than the waiting cleaning time. . Specifically, the operation control unit 5 may change the set value of the operational acceleration of the cleaning side substrate transport system from the first standard acceleration value to the acceleration value lower than the first standard acceleration value, and transport the cleaning side substrate. The set value of the operating speed of the system is changed from the first standard speed value to a speed value lower than the first standard speed value. For example, the operation control unit 5 may change the set value of the acceleration when the first transfer robot 77 and/or the second transfer robot 78 of the cleaning unit 4 ascend from the standard acceleration value to the acceleration value lower than the standard acceleration value. Further, the set value of the maximum speed when the first transfer robot 77 and/or the second transfer robot 78 is raised is further changed from the standard speed value to a speed value lower than the standard speed value. The above speed value lower than the first standard speed value may also be a preset value.

When the waiting time for washing is longer than the waiting polishing time, the action of the washing unit 4 determines the reaction speed factor. Therefore, the operation control unit 5 lowers the set value of the operational acceleration of the polishing-side substrate transport system (step 4). In one embodiment, the operation control unit 5 changes the set value of the operational acceleration of the polishing-side substrate transport system from the second standard acceleration value to an acceleration value lower than the second standard acceleration value. For example, the operation control unit 5 changes the set value of the acceleration when the transport robot (loader) 22 moves along the arrangement of the substrate cassettes in order to carry the substrate into the polishing unit 3, and changes the standard acceleration value to be lower than the standard acceleration value. Acceleration value. In another example, the set value of the acceleration of the polishing head 31A when the polishing head 31A is moved between the polishing position and the transport position is changed from the standard acceleration value to an acceleration value lower than the standard acceleration value. The above acceleration value lower than the second standard acceleration value may also be a preset value.

In the embodiment, the operation control unit 5 can reduce the set value of the operational acceleration of the polishing-side substrate transport system and reduce the set value of the operating speed of the polishing-side substrate transport system when the waiting time is longer than the waiting polishing time. Specifically, the operation control unit 5 may change the set value of the operational acceleration of the polishing-side substrate transport system from the second standard acceleration value to the acceleration value lower than the second standard acceleration value, and may move the polishing-side substrate transport system. The set value of the operation speed is changed from the second standard speed value to a speed value lower than the second standard speed value. For example, the operation control unit 5 may change the set value of the acceleration when the transport robot (loader) 22 moves along the arrangement of the substrate cassettes in order to carry the substrate into the polishing unit 3, and change the standard acceleration value to be higher than the standard acceleration value. The low acceleration value further changes the set value of the maximum speed when the transport robot (loader) 22 moves along the arrangement of the substrate cassettes, and changes the standard speed value to a speed value lower than the standard speed value. The above speed value lower than the second standard speed value may also be a preset value.

As in the previous embodiment, the peak power of the substrate processing apparatus can be reduced by the autonomous shift control function of the present embodiment.

Next, another embodiment in which the peak current of the substrate processing apparatus can be reduced will be described with reference to Fig. 12. The substrate processing apparatus of this embodiment includes a power conditioner 90 connected to a power source 96 thereof. The power conditioner 90 includes a battery 91 that stores electric power from the commercial power source 95, and a power stored in the battery 91 when the power required for the substrate processing operation by the polishing unit 3 and the cleaning unit 4 is higher than a predetermined cutting level. A peak cut portion 92 of electric power from the commercial power source 95 is added. The battery 91 is connected to the commercial power source 95 and the power source 96 of the substrate processing apparatus.

As shown in the graph of Fig. 12, the power required for the substrate processing operation periodically fluctuates as the substrate is processed. The peak cutting portion 92 is configured to require electric power equal to or higher than the cutting cutting level, and to compensate the battery 91 for electric power requiring insufficient electric power. Specifically, when the power required for the substrate processing operation is lower than the cutting level, the peak cutting unit 92 supplies at least a part of the electric power from the commercial power source 95 to the battery 91 and stores the electric power in the battery 91. When a plurality of substrates are polished by the substrate processing apparatus, and the power required for the substrate processing operation exceeds the cutting level, the peak cutting unit 92 supplies power corresponding to the cutting level from the commercial power source 95 to the power source 96 of the substrate processing apparatus, and The power difference between the power required for the substrate processing operation and the cutting level is supplied from the battery 91 to the power source 96 of the substrate processing apparatus.

According to the present embodiment, since the power of the cutting level or higher can be cut by the peak cutting portion 92, the insufficient power is compensated by the battery 91, so that the peak power of the substrate processing apparatus can be reduced.

Next, another embodiment in which the peak current of the substrate processing apparatus can be reduced will be described. The thirteenth figure shows a graph of the power consumption of the four polishing units 3A to 3D. The vertical axis represents the power [W] consumed by the substrate processing apparatus, and the horizontal axis represents time [seconds]. As shown in the thirteenth diagram, the electric power consumed by each of the polishing units 3A to 3D rises during the substrate polishing operation and decreases when the substrate polishing operation is completed. Since each of the polishing units 3A to 3D polishes a plurality of substrates at equal time intervals, the power of each of the polishing units 3A to 3D changes in an almost periodic period.

Fig. 14 is a graph showing the total power consumed by the four polishing units 3A to 3D shown in Fig. 13. As is understood from the fourteenth diagram, when the four polishing units 3A to 3D perform the substrate polishing at the same time, the power consumed by the respective polishing units 3A to 3D overlaps, and as a result, the peak power increases.

Therefore, in the present embodiment, at least two of the four polishing units 3A to 3D alternately perform polishing of the substrate at different times. For example, a plurality of substrates are polished by the first polishing unit 3A, and when the first polishing unit 3A has not polished a plurality of substrates, the other plurality of substrates are ground by the second polishing unit 3B. Specifically, as shown in the fifteenth diagram, the operation control unit 5 issues a command to the second polishing unit 3B to cause the second polishing unit 3B to start polishing the substrate after the first polishing unit 3A finishes polishing the substrate. Further, the operation control unit 5 issues a command to the first polishing unit 3A to cause the first polishing unit 3A to start polishing the substrate after the second polishing unit 3B finishes polishing the substrate. When such an interactive polishing operation is employed, the power consumed by the two polishing units 3A, 3B does not overlap, and as a result, the peak power required for the entire substrate processing apparatus can be reduced.

The embodiments shown in the eighth, eleventh, twelfth, and fifteenth drawings can be combined as appropriate. For example, the operation control unit 5 can also execute both the flowcharts shown in the eighth diagram and the eleventh diagram.

Next, another embodiment of the substrate processing apparatus will be described. In the present embodiment, the substrate processing apparatus includes an on-demand operation function for reducing the power consumption of the polishing unit 3 and/or the cleaning unit 4. In the standby operation function, the substrate processing unit (the polishing unit 3 and/or the cleaning unit 4) cuts off the power line by the motor of the substrate processing unit in the standby mode to reduce the power consumption function. The following describes the on-demand job function.

Fig. 16 is a side view showing the substrate processing apparatus shown in Fig. 1 . Reference numeral 100 in the sixteenth diagram denotes a substrate processing portion for processing a substrate. The substrate processing unit 100 may be used to polish the polishing unit 3 of the substrate, or may be used to clean the substrate 4, or may include both the polishing unit 3 and the cleaning unit 4. The substrate processing apparatus includes a power source 96 electrically connected to the commercial power source 95, and a power-off device 106 connected to the power source 96. Each of the motors of the substrate processing unit 100 is connected to the power source 96 via the power-off device 106 via the power-off device 106. The power-off device 106 is disposed on the power line 109. Power is supplied from the power source 96 to the motors through the power line 109 and the power-off device 106.

The motor of the substrate processing unit 100 includes a motor 19 that rotates the polishing table 30A, a motor 37A that rotates the polishing head 31A, a swing motor 39A that rotates the polishing head 31A, and a drive motor that transports the robot of the substrate processing unit 100; The cleaning tool motors 82 and 83 that rotate the cleaning tools 87 and 88 of the first cleaning units 73A and 73B. The transport robot of the substrate processing unit 100 includes the linear transporters 6 and 7 and the rocking conveyor 12 of the polishing unit 3, and further includes a first transport robot 77 and a second transport robot 78 of the cleaning unit 4.

Similarly, the drive motor of the transfer robot (loader) 22 is connected to the power source 96 via the power line 109 via the power-off device 106. The stage motor of the polishing units 3B, 3C, and 3D, the head motor, the swing motor, and the cleaning motor of the second cleaning unit 74A, 74B are similarly connected to the power source 96 by the power line 109 and by the power-off device 106. , but no icon.

An exhaust duct 110 for forming a negative pressure inside the polishing unit 3 is connected to the polishing unit 3. The exhaust duct 110 is connected to a vacuum source (such as a vacuum pump) not shown. A flow rate adjusting valve 111 and a flow meter 113 are attached to the exhaust duct 110. The flow rate of the gas discharged from the polishing unit 3 through the exhaust duct 110 is regulated by the flow rate adjusting valve 111 and measured by the flow meter 113. Similarly, an exhaust duct 114 for forming a negative pressure inside the washing unit 4 is connected to the washing unit 4. The exhaust duct 114 is connected to a vacuum source (such as a vacuum pump) (not shown). A flow regulating valve 115 and a flow meter 116 are attached to the exhaust duct 114. The flow rate of the gas discharged from the cleaning unit 4 through the exhaust duct 114 is regulated by the flow rate adjusting valve 115 and measured by the flow meter 116. The operations of the flow rate adjusting valves 111 and 115 are controlled by the operation control unit 5.

The loading/unloading unit 2, the polishing unit 3, and the cleaning unit 4 are disposed in the casing 1. A solar panel 119 and a fan filter unit (FFU) 122 are disposed on the upper wall of the casing 1. The solar panel 119 converts the illumination in the factory into electric power and supplies it to the storage battery 121. The electric power stored in the battery 121 is supplied to the electric machine of the substrate processing apparatus as needed.

The fan filter unit 122 forms a descending flow of clean air in the casing 1 by supplying clean air in the casing 1. The fan filter unit 122 includes a filter (for example, a HEPA filter) 123, a fan 124, and a fan motor 125 for rotating the fan 124. The fan motor 125 is connected to the power source 96 via a driver (inverter) (not shown). The rotation speed of the fan motor 125 is controlled by the operation control unit 5 via a driver (inverter).

The power-off device 106 is a switch that establishes and cuts off the respective motors of the substrate processing unit 100 electrically connected to the power source 96. Each of the motors is electrically connected to the power source 96 by the power-off device 106 independently of the other motors and electrically disconnected. The power-off device 106 is connected to the operation control unit 5, and the operation of the power-off device 106 is controlled by the operation control unit 5.

The operation control unit 5 is configured to switch the operation mode of the substrate processing unit 100 between the processing mode and the standby mode. The processing mode is an operation mode when processing a substrate (for example, polishing and/or cleaning), and waits for an operation mode after the mode substrate processing is completed. Specifically, the operation control unit 5 switches the operation mode from the standby mode to the processing mode before the substrate to be processed is loaded into the substrate processing unit 100, and switches the operation mode from the processing mode to the processing mode after the substrate is processed by the substrate processing unit 100. Waiting mode.

After the processing of the substrate by the substrate processing unit 100 is completed, the operation control unit 5 switches the operation mode of the substrate processing unit 100 from the processing mode to the standby mode, and issues a command to the power-off device 106 to turn off the power-off device 106. The power line 109 of at least one motor of the substrate processing unit 100 is configured as described above. For example, after the polishing unit 3 finishes polishing the substrate, the power-off device 106 receives the command signal from the operation control unit 5, and cuts off the power line 109 of the stage motor 19, the head motor 37A, and the swing motor 39A. In one embodiment, the power-off device 106 can also cut off the power line 109 of the stage motor 19, the head motor 37A, the swing motor 39A, the drive motors of the linear conveyors 6, 7 and the drive motor of the swing conveyor 12.

When the cleaning unit 4 cleans the substrate and finishes drying, the power-off device 106 receives a command signal from the operation control unit 5, and cuts off the power lines 109 to the cleaning tool motors 82 and 83. In one embodiment, the power-off device 106 can also cut off the power lines 109 to the drive motors of the washer motors 82 and 83 and the transport robots 77 and 78.

Generally, even if the polishing portion 3 does not polish the substrate, the polishing table 30A rotates at a low speed in order to maintain the lubrication of its bearing. Similarly, even when the cleaning unit 4 does not clean the substrate, pure water is supplied to the cleaning tools 87 and 88 in order to prevent drying of the cleaning tools 87 and 88 of the cleaning unit 73A, and the cleaning device 87 is rotated at a low speed. 88. According to the request type work function of the present embodiment, when the polishing unit 3 or the cleaning unit 4 is in the standby mode, the power line 109 to the motor of the polishing unit 3 or the cleaning unit 4 is cut off by the power-off device 106. As a result, the power consumption of the polishing unit 3 or the cleaning unit 4 in the standby mode can be reduced.

In one embodiment, after the substrate processing unit 100 processes the substrate, the operation control unit 5 issues a command to the power-off device 106, and causes the power-off device 106 to cut off the power line 109 to the transport robot (loader) 22. By such an operation, the power consumption of the entire substrate processing apparatus while waiting can be further reduced.

Next, the request type control function of the substrate processing apparatus will be described. The request-based control function is a function of reducing the power consumption and the common consumption amount of the substrate processing apparatus when the substrate processing unit 100 (the polishing unit 3 and/or the cleaning unit 4) is in the standby mode. Hereinafter, the request type control function will be described.

In the present embodiment, after the substrate processing unit 100 (the polishing unit 3 and/or the cleaning unit 4) processes the substrate, the operation control unit 5 switches the operation mode of the substrate processing unit 100 from the processing mode to the standby mode, and reduces fan filtering. The fan unit 125 of the unit 122 has a rotational speed. Specifically, the operation control unit 5 lowers the set value of the rotational speed of the fan motor 125 from the standard set value to a value lower than the standard set value. By this operation, the power consumption of the substrate processing apparatus can be reduced.

In one embodiment, the request control function may include a function of reducing the amount of utility used by the substrate processing unit 100 in addition to reducing power consumption. Specifically, after the substrate processing unit 100 (the polishing unit 3 and/or the cleaning unit 4) processes the substrate, the operation control unit 5 switches the operation mode of the substrate processing unit 100 from the processing mode to the standby mode, and causes the substrate to be The utility flow rate used by the processing unit 100 is lowered.

The common-system substrate processing unit 100 (the polishing unit 3 and the cleaning unit 4) consumes fluids necessary for processing the substrate. Common examples are pure water, exhaust from the substrate processing unit 100, dry air, and cooling water. Pure water is used, for example, as moisturizing water for the polishing pad 10. Pure water is supplied from the liquid supply nozzle 32A to the polishing pad 10. The flow rate of pure water is regulated by the flow regulating valve 130 and is measured by the flow meter 131. Further, pure water is also used as the moisturizing water of the washing tools 87, 88 of the washing unit 73A. The flow of pure water is regulated by flow regulating valve 134 and is measured by flow meter 135.

The gas discharged from the substrate processing unit 100 through the exhaust ducts 110 and 114 from the exhaust system of the substrate processing unit 100. The gas discharged from the substrate processing unit 100 is mainly air. The flow of exhaust gas is regulated by flow regulating valves 111, 115 and is measured by flow meters 113, 116.

The dry air is, for example, a pressurized gas supplied to the pressure chamber of the polishing head 31A (refer to symbols D1 to D5 of the third drawing). The flow rate of dry air to the pressure chamber is measured by flow meters K1 to K5. Dry air is also used as the working fluid for the air cylinders of the actuator.

The cooling water is used to cool the polishing table 30A as shown in Fig. 16. The cooling water flow path pipe 140 extends in the polishing table 30A. The polishing table 30A whose temperature rises by sliding contact between the substrate and the polishing pad 10 is cooled by the cooling water flowing through the cooling water flow path tube 140. The flow of cooling water is regulated by flow regulating valve 141 and is measured by flow meter 142.

The above public use examples are also applicable to other uses. Further, other examples of the common use include nitrogen gas, drainage, and the like.

SEMI (Semicon ductor Equipment and Materials International) of the International Industry Association of Micro/Nano Electronics Manufacturing Supply Chain provides conversion factors for converting the common use of semiconductor manufacturing equipment into power consumption. By using the common volume multiplied by the conversion factor, the common usage can be converted into power consumption. For example, the conversion factor of the exhaust gas 0.0037kWh / m ^3, the conversion factor for the drying air 0.147kWh / m ^3, the cooling water (temperature 20 ~ 25 ℃) The conversion factor 1.56kWh / m ^3, water (pressurized The conversion factor is 9.0 kWh/m ³ .

The operation control unit 5 stores the common conversion factors described above in the memory device 210 in advance. The flow meter for measuring the flow rates of the exhaust gas, the pure water, the dry air, and the cooling water is connected to the operation control unit 5, and the measured value of each common flow rate is transmitted to the operation control unit 5. The operation control unit 5 calculates the common volume used by the substrate processing unit 100 from the measured value of the flow rate, and calculates the converted power consumption by converting the common usage amount into the power consumption amount from each common volume and the corresponding conversion factor. Quantity [kWh]. For example, the operation control unit 5 calculates the converted power consumption of the exhaust gas by multiplying the gas volume exhausted from the substrate processing unit 100 by the corresponding conversion factor.

The operation control unit 5 operates at least one of the flow rate adjustment valves after the substrate processing unit 100 finishes processing the substrate, and reduces the flow rate of the common (exhaust gas, pure water, dry air, or cooling water) used by the substrate processing unit 100. And constitute. By doing so, the amount of use common to the substrate processing unit 100 in the standby mode can be reduced. The reduction in utility usage is equivalent to a reduction in power consumption. In other words, by reducing the amount of utility used, the power consumption of the entire substrate processing apparatus can be reduced.

The power meter 150 shown in FIG. 16 measures the electric power supplied from the power source 96 to the substrate processing unit 100, and transmits the measured value [W] of the electric power to the operation control unit 5. The operation control unit 5 calculates the power consumption amount [kWh] of the substrate processing unit 100 from the measured value of the electric power. The operation control unit 5 records the power consumption of the substrate processing unit 100 in the memory device 210 of the operation control unit 5. Similarly, the operation control unit 5 records the converted power consumption calculated by each common unit in the memory device 210 of the operation control unit 5. Further, the operation control unit 5 displays the power consumption amount and the converted power consumption amount of the substrate processing unit 100 recorded as the power consumption data on the display device 241.

The seventeenth graph is a graph showing the power consumption and the converted power consumption displayed on the display device 241 of the operation control unit 5. The vertical axis represents power consumption [kWh], and the horizontal axis represents time. The power consumption shown in FIG. 17 is the total of the power consumption of the substrate processing unit 100 and the calculated power consumption calculated by each of the commons, that is, the total power consumption. As shown in Fig. 17, the operation control unit 5 can visualize the power consumption that changes with time, and can provide a graph that contributes to an improvement in the operation method of the substrate processing apparatus.

The operation control unit 5 calculates the power consumption per board by dividing the cumulative value of the total power consumption for a certain period of time by the number of substrates processed in that time. The power consumption per one substrate can be evaluated, for example, for a polishing process or a cleaning process for a substrate. Similarly, the operation control unit 5 can calculate the power consumption per one of the substrate cartridges (per batch). Furthermore, the operation control unit 5 can also calculate the cumulative value of the power consumption from a certain time to the present.

The on-demand control function can be executed simultaneously with the on-demand job function described previously. For example, after the substrate processing unit 100 finishes processing the substrate, the operation control unit 5 can issue a command to the substrate processing unit 100 to cut off the power line 109 of the stage motor 19 and reduce the rotational speed of the fan motor 125 of the fan filter unit 122. Therefore, by combining the on-demand job function and the on-demand control function, the power consumption of the entire substrate processing apparatus can be effectively reduced.

Fig. 18 is a schematic view showing another embodiment for reducing the power consumption of the substrate processing apparatus. The configuration of the present embodiment, which is not particularly described, is the same as the configuration of the above-described embodiment, and thus the description thereof will not be repeated. The substrate processing apparatus of the present embodiment includes a multi-axis integrated amplifier 160 electrically connected to a plurality of motors M1, M2, and M3 of the substrate processing apparatus. Usually, power is supplied from the power source 96 to the motors M1, M2, and M3 through the multi-axis integrated amplifier 160. The multi-axis integrated amplifier 160 is configured to supply regenerative electric power generated when one of the plurality of motors M1, M2, and M3 is decelerated to the other one of the motors M1, M2, and M3. Such a multi-axis integrated amplifier 160 is commercially available. In the present embodiment, three motors are connected to the multi-axis integrated amplifier 160, but two motors or three more motors may be connected to the multi-axis integrated amplifier 160.

The motors M1, M2, and M3 connected to the multi-axis integrated amplifier 160 are driven from the motor units 19 of the four polishing units 3A to 3D, the drive motor of the transfer robot (loader) 22, the drive motor of the first transfer robot 77, and the second The drive motor of the transfer robot 78, the drive motor of the linear conveyors 6, 7 and the drive motor of the swing conveyor 12 are selected. For example, the stage motor 19 of the first polishing unit 3A and the stage motor 19 of the second polishing unit 3B are connected to the multi-axis integrated amplifier 160. In this configuration, when the stage motor 19 of the first polishing unit 3A is decelerated, the regenerative electric power generated by the stage motor 19 is supplied to the stage motor 19 of the second polishing unit 3B through the multi-axis integrated amplifier 160. Therefore, the power consumption of the entire substrate processing apparatus can be reduced. The regenerative electric power can also be stored in the battery 121 shown in Fig. 16.

As shown in Fig. 19, the stage motor 19 and the head motor 37A may be connected to the multi-axis integrated amplifier 160. In the substrate polishing, when the rotation speed of the polishing table 30A is higher than the rotation speed of the polishing head 31A, the head motor 37A generates electricity. This generated electric power is supplied to the stage motor 19 through the multi-axis integrated amplifier 160. Therefore, the power consumption of the stage motor 19 is lowered, and as a result, the power consumption of the entire substrate processing apparatus can be reduced.

Fig. 20 is a schematic view showing another embodiment for reducing the power consumption of the substrate processing apparatus. The configuration of the present embodiment, which is not particularly described, is the same as the configuration of the above-described embodiment, and thus the description thereof will not be repeated. As shown in the twentieth figure, the first polishing unit 3A includes: a disk 170 disposed around the polishing table 30A; a fluid conduit 171 extending from the bottom of the disk 170; a gas-liquid separation groove 175 connected to the fluid conduit 171; A water wheel 177 disposed in the fluid conduit 171; and a generator 179 coupled to the water tank 177.

In the substrate polishing, the polishing liquid (slurry) is supplied from the liquid supply nozzle 32A to the polishing pad 10. Further, after the substrate is polished, pure water as a conditioning liquid is supplied from the liquid supply nozzle 32A to the polishing pad 10. After the pad is trimmed, the gas-liquid mixed fluid is supplied from the atomizer 34A to the polishing pad 10. These fluids are concentrated on the disk 170 and introduced into the gas-liquid separation tank 175 through the fluid conduit 171. The fluid is separated into a gas and a liquid in the gas-liquid separation tank 175. The gas is discharged through the exhaust duct 181, and the liquid is discharged through the drain 182.

The fluid flowing through the fluid conduit 171 rotates the water wheel 177 and causes the generator 179 coupled to the water wheel 177 to generate electricity. The generated electric power may be supplied to any of the above-described motors of the substrate processing apparatus, or may be stored in the storage battery 121 shown in Fig. 16. Therefore, according to the present embodiment, since the potential of the fluid can be converted into electric power, the power consumption of the entire substrate processing apparatus can be reduced. The water wheel 177 of this embodiment has a spiral shape. An advantage of this type of waterwheel 177 is that it can be effectively rotated with low lift. One embodiment of the waterwheel 177 can also be other types of waterwheels. The second polishing unit 3B to the fourth polishing unit 3D also have the configuration shown in the twentieth diagram, but are not shown.

The operation of the substrate processing apparatus is controlled by the operation control unit 5. The operation control unit 5 of the present embodiment is constituted by a dedicated computer or a general-purpose computer. The twenty-first figure shows a schematic diagram showing the configuration of the operation control unit 5. The operation control unit 5 includes a storage device 210 that stores programs and data, and a processing device 220 such as a CPU (Central Processing Unit) that performs calculations in accordance with a program stored in the storage device 210; and inputs data, programs, and various types of information. An input device 230 of the memory device 210; an output device 240 for outputting the processing result and the processed data; and a communication device 250 for connecting to a network such as the Internet.

The memory device 210 includes a main memory device 211 accessible by the processing device 220, and an auxiliary memory device 212 for storing data and programs. The main memory device 211 is, for example, a random access memory (RAM), and the auxiliary memory device 212 is a storage device such as a hard disk drive (HDD) or a solid state disk drive (SSD).

The input device 230 is provided with a keyboard and a mouse, and further includes: a recording medium reading device 232 for reading data from the recording medium; and a recording medium 234 connected to the recording medium. The recording medium is a computer-readable recording medium of a permanent entity, such as a compact disc (for example, a CD-ROM, a DVD-ROM), a semiconductor memory (for example, a USB flash drive, a memory card). Examples of the recording medium reading device 232 are an optical disk drive such as a CD disk drive, a DVD disk drive, and a card reader. An example of the recording medium 234 is a USB terminal. The program and/or data stored in the recording medium is introduced into the operation control unit 5 via the input device 230, and stored in the auxiliary memory device 212 of the memory device 210. The output device 240 includes a display device 241 and a printing device 242.

The motion control unit 5 operates in accordance with a program stored in the memory device 210. The program is recorded on a computer-readable recording medium of a permanent entity, and the motion control unit 5 is provided via a recording medium. Further, the program can also provide the operation control unit 5 via a communication network such as the Internet.

The above embodiments are described for the purpose of carrying out the invention by those having ordinary skill in the art to which the invention pertains. Those skilled in the art can of course implement various modifications of the above-described embodiments, and the technical idea of the present invention can also be applied to other embodiments. Therefore, the present invention is not limited to the embodiments described, but should be construed broadly in accordance with the technical scope defined by the appended claims.

(industrial use)

The present invention is applicable to a method for reducing peak power of a substrate processing apparatus. Further, the present invention can be utilized in a method of operating a substrate processing apparatus for processing a substrate such as a wafer.

Claims (16)

 A substrate processing method for calculating an expected polishing time from a polishing processing program for polishing a substrate, calculating an expected cleaning time from a cleaning processing program for cleaning the substrate, and dividing the expected polishing time by the polishing portion The polishing processing amount index value is calculated by dividing the number of polishing units, and the cleaning processing time index value is calculated by dividing the expected cleaning time by the number of cleaning paths in the cleaning unit, and the polishing processing amount index value and the cleaning processing amount are compared. When the polishing processing amount index value is larger than the cleaning processing amount index value, the setting value of the operating acceleration of the cleaning side substrate transfer system is lowered, and when the cleaning processing amount index value is larger than the polishing processing amount index value The set value of the motion acceleration of the polishing side substrate transport system is lowered.    In the substrate processing method according to the first aspect of the invention, wherein the polishing processing amount index value is larger than the cleaning processing amount index value, the setting value of the operating acceleration of the cleaning side substrate transfer system is lowered, and the cleaning side is lowered. When the cleaning processing amount index value is larger than the polishing processing amount index value, the set value of the operating speed of the polishing-side substrate transfer system is lowered, and the operation of the polishing-side substrate transfer system is lowered. The set value of the speed.    A substrate processing method characterized in that a waiting polishing time of a substrate carried in a polishing portion is counted, and a waiting washing time of a substrate carried in the cleaning portion is counted, and the waiting polishing time and the waiting washing time are compared, and the waiting grinding time is awaited. When the washing time is longer than the waiting time, the set value of the operating acceleration of the cleaning side substrate transfer system is lowered, and when the waiting washing time is longer than the waiting polishing time, the set value of the operating acceleration of the polishing side substrate transfer system is lowered.    The substrate processing method according to claim 3, wherein when the waiting polishing time is longer than the waiting cleaning time, the setting value of the operating acceleration of the cleaning side substrate transfer system is lowered, and the cleaning side substrate transfer system is lowered. When the waiting washing time is longer than the waiting polishing time, the setting value of the operating speed is lower than the set value of the operating acceleration of the polishing-side substrate transfer system, and the set value of the operating speed of the polishing-side substrate transfer system is lowered.    The substrate processing method according to claim 3, wherein the waiting polishing time is a delay time from a start operation time to an actual start operation time of the polishing side substrate transfer system, and the waiting cleaning time is the cleaning side. The delay time from the start of the operation of the substrate transfer system to the actual start of the operation.    A substrate processing method characterized in that, when the power required for the substrate processing operation by the substrate processing apparatus is lower than a preset cut level (Cut Level), power is supplied from the commercial power source to the battery, and the plurality of substrate processing apparatuses are processed by the substrate processing apparatus. In the substrate processing, when the power required for the substrate processing operation is higher than the cutting level, the power corresponding to the cutting level is supplied from the commercial power source to the power supply of the substrate processing apparatus, and corresponds to the substrate processing operation. The electric power requiring the difference between the electric power and the cutting level is supplied from the battery to the power source of the substrate processing apparatus.    A substrate processing method is characterized in that a plurality of substrates are polished by a first polishing unit, and when the plurality of substrates are not polished by the first polishing unit, the other plurality of substrates are polished by the second polishing unit.    A method of operating a substrate processing apparatus, wherein the operation mode of the substrate processing unit is switched from a standby mode to a processing mode, and the substrate processing unit processes the substrate, and after the substrate processing is completed, the operation mode of the substrate processing unit is performed. The process mode is switched to the standby mode, and the power path to at least one of the substrates of the substrate processing unit is cut off.    The method of operating a substrate processing apparatus according to claim 8, wherein the at least one motor includes a stage motor for rotating the polishing table for polishing the substrate, and a head motor for rotating the polishing head for polishing the substrate.    The method of operating a substrate processing apparatus according to claim 8 or 9, wherein the at least one motor includes a drive motor for transporting the substrate.    The method of operating a substrate processing apparatus according to claim 8 or 9, wherein the at least one motor includes a cleaning device motor for rotating the cleaning device for cleaning the substrate.    The method of operating a substrate processing apparatus according to claim 8 or 9, wherein after the substrate processing is completed, the method further includes a step of cutting a power path of a drive motor of a loader for loading the substrate in the substrate processing unit.    The method of operating a substrate processing apparatus according to claim 8 or 9, wherein the substrate processing unit is a polishing unit for polishing a substrate or a cleaning unit for cleaning a substrate.    The method of operating a substrate processing apparatus according to claim 8 or 9, wherein after the substrate processing is completed, a step of reducing a utility flow rate used by the substrate processing unit is further included.    A method of operating a substrate processing apparatus, wherein a first common power consumption is calculated by converting a first utility volume used by a substrate processing unit into a power consumption amount, and a second common volume used by the substrate processing unit is calculated. Calculating the second converted power consumption by the power consumption, calculating the power consumption of the substrate processing unit, and recording the first converted power consumption, the second converted power consumption, and the substrate processing unit Electricity.    The method of operating a substrate processing apparatus according to claim 15, wherein the first converted power consumption, the second converted power consumption, and a power consumption of the substrate processing unit are generated.