CN101065218B - Flexible rinsing step in a CMP process - Google Patents
Flexible rinsing step in a CMP process Download PDFInfo
- Publication number
- CN101065218B CN101065218B CN2005800407303A CN200580040730A CN101065218B CN 101065218 B CN101065218 B CN 101065218B CN 2005800407303 A CN2005800407303 A CN 2005800407303A CN 200580040730 A CN200580040730 A CN 200580040730A CN 101065218 B CN101065218 B CN 101065218B
- Authority
- CN
- China
- Prior art keywords
- polishing
- treatment step
- time
- cmp
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
- B24B37/013—Devices or means for detecting lapping completion
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
Abstract
The present invention relates to chemical mechanical planarizing (CMP) and to an apparatus for performing such a CMP process. The method and apparatus according to the invention prevent or at least minimize the time during which a wafer is exposed to air in between two subsequent polishing steps during a CMP process by adjusting the time period of the rinsing steps such that each rinsing step ends at substantially the same time. In that way, damage such as corrosion can be avoided or at least minimized and high quality devices can be achieved.
Description
Technical field
The present invention relates to a kind of chemically mechanical polishing (CMP) instrument and technology, more specifically, relate to wherein that wafer is exposed to minimized CMP instrument and technology in the air between the subsequent step of complanation and flushing (rinsing), also relate to the intermediate semiconductor product or the final semiconductor product that have polished by CMP instrument or method.
Background technology
Chemically mechanical polishing (CMP) has developed into the important process in design, exploitation and the processing of for example electric or electronic unit.The CMP technology for cost effectively and the manufacturing of leading-edge products be indispensable.CMP is crucial for the manufacturing of making the advanced stage construction integrated circuit in the microelectronics industry.Today, CMP technology is used by semi-conductor industry usually, falls on the wafer or the raised points on deposit film on the wafer with polishing, like that, film or wafer is flattened, and reaches surface required part and/or integral planarization.Therefore, this CMP technology abbreviates planarization technology usually as.
In CMP technology, utilize machinery and chemical force to produce the rational required mechanical clearance of material (for example, wafer or membrane material), and the accurate controllability of clearance.A kind of material is the result of chemistry and mechanical force with respect to the selectivity of the clearance of another kind of material.Therefore,, can depend on required application, realize good selectivity or do not have selectivity by adjusting these chemistry and mechanical force.
At J.M.Steigerwald, S.P.Murarka and R.J.Gutman 1997, New York, John Wiley﹠amp; Described and illustrated CMP technology all sidedly in Sons " Chemical Mechanical Planarization ofMicroelectronic Materials ".CMP technology comprises: move the sample surfaces for the treatment of complanation or polishing against polishing pad, described polishing pad is used to provide the support to sample surfaces, and carries slurry causes complanation with influence polishing between sample surfaces and polishing pad.The chemical reaction that takes place during CMP changes the material surface character of polishing by producing superficial layer (for example, oxide skin(coating)).This superficial layer comprises chemistry and the engineering properties different with engineering properties with the chemistry of body material, and this superficial layer can easily be removed by the abrasive grains and the wearing and tearing of the polishing pad of friction sample usually.Therefore, chemical force is as two main purposes.At first, formation makes material be easy to remove and make it possible to accurately to control the superficial layer of clearance.Secondly, surround grinding-material, prevent from grinding-material is deposited on the sample surfaces once more, remove grinding-material by the dissolving grinding-material or with surfactant.
Fig. 1 shows schematically showing of generally well-known polishing tool.The wafer 1 for the treatment of complanation is pressed on the polished surface 2 (being also referred to as polishing pad 2), makes wafer 1 and polishing pad 2 begin to move relative to each other, preferably rotatablely move.In a preferred embodiment, 2 two of wafer 1 and polishing pads all experience and rotatablely move.To comprise that the polishing slurries 3 that is suspended in the abrasive grains of fine size in the aqueous medium that comprises chemical reagent is assigned to the position on the polishing pad 2, for example central authorities of polishing pad 2.The centrifugal force that produces by rotatablely moving and with the existence of the very approaching wafer 1 of polishing pad 2, polishing slurries 3 is distributed on the polishing pad 2, form the thin slice liquid on the polishing pad 2.Fig. 2 at length shows polished wafer 1, polishing pad 2 and polishing slurries 3.From the mechanism of power that is applied to the abrasive grains in the slurry 3 and speed with from the combination of the chemical action of water in the polishing slurries 3 and chemical reagent, cause wafer 1 lip-deep material to be removed.
At specific application, the CMP instrument can comprise the polished land more than, and each includes the polishing pad 2 according to Fig. 1.Therefore, CMP technology can comprise more than a polishing step.Between continuous polishing step, wafer is washed with deionization (DI) water, DI water is the ultra-pure water that uses in semiconductor processes, more generally, washes with washing lotion.The example of washing lotion can be the BTA (BTA) with concentration between 0.0001 to 0.1M.During rinsing step, the wafer that has polished is dipped in the deionized water, so that stop at the chemical reaction that previous operating period begins, and remove the product of this operation from wafer surface.After rinsing step, wafer 1 is mentioned (lifted up) from polished land, and move to the polishing stage that is used on the next polished land subsequently.In the polishing order that the best is adjusted, should make wafer 1 directly begin the continuous polishing stage, and without any waiting for constantly.
Yet the shortcoming of known system is: the rinsing step between two continuous polishing steps has fixed duration.Therefore, if different polishing steps has the different duration, the wafer that at first will pass through the polishing step of minimum length in time immerses in the deionized water, after the fixing flushing duration, described wafer is removed from deionized water, and before the polishing step that described wafer is sent to subsequently, described wafer has to wait for (remaining wet) in air, because whole wafers are side by side moved on to next step.Comprise that the wet wafer from the chemical residual vestige of slurry is exposed in the air, in the chemically active environment of the height of CMP instrument, increased the possibility of wafer surface damage (for example, corroding), the product and the device that can cause having poor quality.
Summary of the invention
The objective of the invention is to propose a kind of CMP instrument and technology, the minimizing possibility that makes the substrate surface such as the Semiconductor substrate that semiconductor wafer or section processes are crossed corrode or damage also proposes the centre or the final semiconductor product that obtain by this technology.
Above-mentioned purpose realizes by the method according to this invention, equipment and semiconductor product.
The present invention proposes chemical mechanical planarization apparatus with at least two polished land, each polished land all has the device that is used for carrying out simultaneously treatment step, each step includes polishing step, and at least one of described treatment step also comprises the rinsing step after the polishing step.In the method according to the invention, each treatment step has total treatment step time, and described equipment also comprises control device, the duration that is adapted to pass through the adjusting rinsing step is provided with total treatment step time, makes that the treatment step essence on each polished land side by side finishes.Essence finishes side by side to mean that the difference of the concluding time of the processing step on each polished land is not more than 2 seconds.
According to the embodiment of the invention, described equipment can also comprise the device that is used for determining by concluding time of slow polishing step the concluding time of each treatment step, and described control device can have and is used for by regulating each duration, the device of the total processing time of setting of described at least one rinsing step.Described equipment can also comprise endpoint detector, is used for determining the concluding time of treatment step.
In the device in accordance with the invention, before wafer can being moved to next polished land, described wafer needn't be waited in air.Therefore, chemical-mechanical planarization according to the present invention has such advantage: between two polishings or polishing+rinsing step, do not exist or essence does not exist in the air of wet wafer and waits for, therefore can make the minimizing possibility of the damage such as erosion.
In embodiments of the present invention, each treatment step can comprise polishing step and rinsing step subsequently.Control device can be suitable for controlling the duration of each rinsing step, makes by concluding time of previous polishing step and the difference between concluding time of slow polishing step and carry out flushing during the minimum determined time period of washing time sum.In one embodiment, control device can be suitable for controlling minimum washing time between 1 to 60 second, preferably, and between 8 to 10 seconds.
In the equipment according to this embodiment of the invention, advantage is the negative interaction of tool production ability not to be taken place.Here do not increase the extra time, if set rinsing step for example the fixedly concluding time will be like this because must comprise margin of safety in this case.Another advantage according to this embodiment of the invention is to carry out polishing and flushing on identical chip carrier.In most prior art CMP instrument, flushing may be carried out on the chip carrier that is different from the chip carrier of carrying out polishing step.This has caused bigger instrument, because take the too many place of ultra-clean chamber for example but disadvantageous.
In an embodiment according to the present invention, described equipment can comprise first, second and the 3rd polished land.For example, first, second can be suitable for carrying out respectively copper CMP, barrier material CMP and polishing with the 3rd embodiment.
The invention allows for a kind of method that is used for the chemical-mechanical planarization of substrate.Described method comprises the treatment step of at least two whiles, each treatment step includes polishing step, and at least one of described treatment step also comprises the rinsing step after the polishing step, wherein, controlling whole treatment steps by the duration of regulating rinsing step makes whole treatment step essence side by side finish.
Can determine the concluding time of whole treatment steps by concluding time of slow polishing step, and can set total treatment step time by each duration of regulating described at least one rinsing step.
In the method according to the invention, before wafer can being moved to next polished land, described wafer needn't be waited in air.Therefore, the method that is used for chemical-mechanical planarization according to the present invention has the following advantages: do not have or do not exist in fact the aerial wait of wet wafer between two polishing steps or the polishing+rinsing step, the damage such as corroding is minimized.
In an embodiment of the present invention, each treatment step can comprise the rinsing step after the polishing step, and can be by concluding time of previous polishing step and the difference and described each rinsing step of execution during the minimum determined time period of washing time sum between concluding time of slow polishing step.
Method according to this embodiment of the invention has the following advantages: the negative interaction to the tool production ability does not take place.Here do not increase the extra time, if for example set rinsing step the fixedly concluding time will be like this because must comprise margin of safety in this case.Another advantage according to this embodiment of the invention is: carry out polishing and flushing on identical chip carrier.In most prior art CMP instrument, flushing may be carried out on the chip carrier that is different from the chip carrier of carrying out polishing step.This has caused bigger instrument, because take the too many place of ultra-clean chamber for example but disadvantageous.
In an embodiment according to the present invention, substrate can be the Semiconductor substrate that semiconductor wafer or section processes are crossed.
The invention allows for a kind of computer program, be used for working as in the processing engine such as computer, on the embedded microprocessor, for example in microcontroller or the programmable gate array such as FPGA during the computer program product, setting is at the time period of the treatment step in the CMP technology of substrate, described computer program comprises code, be used to control and comprise at least two technologies with post-processing step, and at least one treatment step of described treatment step also comprises the rinsing step after the polishing step, and wherein all treatment step essence side by side finishes.
The invention allows for a kind of machine readable data storage device that computer program according to the present invention is stored.
In addition, a kind of method of making electric or electronic device has been proposed.Described method comprises the chemical-mechanical planarization of carrying out substrate, chemical-mechanical planarization comprises at least two treatment steps subsequently, each treatment step comprises polishing step, and at least one treatment step also comprises the rinsing step after the polishing step, wherein makes whole treatment step essence side by side finish by whole treatment steps of duration of regulating rinsing step.For example, described substrate can be the Semiconductor substrate that semiconductor wafer or section processes are crossed.
The invention allows for a kind of computer system, be applicable to receive parameter and these parameters are sent to the CMP instrument, be used for carrying out CMP technology according to the present invention.
In conjunction with the accompanying drawings, according to following detailed description, these and other characteristics of the present invention, feature and advantage will be conspicuous, and the principle of the invention is described by way of example.Only because the cause of giving an example provides this description, rather than limit the scope of the invention.The reference symbol of below quoting is referring to accompanying drawing.
Description of drawings
Fig. 1 is schematically showing of wafer polishing instrument.
Fig. 2 is schematically illustrating of wafer-slurry-polishing pad system.
Fig. 3 is the schematically illustrating of CMP instrument that can be used for the embodiment of the invention.
Fig. 4 A shows wafer processed continuously according to the embodiment of the invention and that needn't wait in the CMP instrument.
Fig. 4 B shows the wafer of not handling continuously and having to wait in the CMP instrument during handling.
Fig. 5 show can specific implementation computer system of the present invention simplified block diagram.
In different figure, identical reference symbol is represented same or analogous element.
The specific embodiment
To and the present invention be described with reference to the drawings to specific embodiment, but the present invention is not limited to this, because the present invention is only limited by claim.Any reference symbol in the claim should not be construed to limited field.Described accompanying drawing only is schematically, and is nonrestrictive.In the accompanying drawings, for illustrative purposes, can exaggerate, and not draw in proportion the size of some elements.The term of use " comprises " and does not get rid of other elements or step in this specification and right are wanted.Unless specifically stated otherwise uses under the situation of indefinite article and definite article when mentioning singular noun, comprises a plurality of these nouns.
In addition, the term first, second, third, etc. in specification and claim are used for distinguishing between like, and unnecessary description is continuous or time sequencing.It should be understood that under suitable environment the term that uses like this is tradable, and the embodiment of the invention described herein can according to describe here or the different sequential working of order of explanation.
It should be noted that the term that uses in the claim " comprises " should not be interpreted as being limited to listed subsequently device, does not get rid of other elements or step.Therefore, the scope of expression formula " equipment comprises device A and B " should not be confined to the equipment of only being made up of components A and B.Mean for the present invention, this equipment unique about parts be A and B.
The present invention proposes a kind of CMP instrument and CMP technology, wherein, avoid that polished substrate (for example, semiconductor wafer) is exposed in the air between two later step in the technology, or it is minimized.So, the substrate such as wafer just less even not can be subjected to may damage such as corroding.This substrate can be a semiconductor wafer, no matter be simply or partly to handle.This causes the production of high quality of products, for example electric device and electronic device.
Fig. 3 shows the schematic diagram of CMP instrument 10 as non-limiting example, comprises the load/unload station 11 with first chip carrier 12, first polished land 13 with second chip carrier 14, the 3rd polished land 17 that has second polished land 15 of the 3rd chip carrier 16 and have the 4th chip carrier 18.Following the providing of example of process allocation of polished land 13,15,17.It should be understood that this example only is for explanation and understanding easily, and do not limit the present invention.
For example, use CMP during can in the manufacturing process of for example electronic device, forming the copper-connection device.Copper CMP (Cu-CMP) is the optimal way that forms copper-connection, because since under relatively low temperature (for example, below 200 ℃) lack the volatile compound of copper and cause copper can not formed pattern by plasma etching, this is the essential feature of plasma etch process.In Cu-CMP, for example, the copper metallization that is used to interconnect can make up and realize by the suitable selection (for example, tantalum Ta or tantalum nitride TaN) of embedding technique that those of ordinary skills are known and barrier film materials etc.
Mosaic technology is a kind of mode that forms metallic circuit, comprising: deposition insulator, for example oxide; Etching groove in oxide; Plated metal everywhere; And return polishing (polishing back) with CMP, make metal only stay in the groove.This is the reverse order of traditional order, comprising: plated metal at first forms pattern with described metal by etching; And deposition oxide is to manage to fill the gap between the metal.Damascene process has been removed the gap and has been filled problem (obtaining oxide between metallic circuit).Use the different distributions of technology during damascene process also causes processing, promptly use oxide etching to replace metal etch, and use the metal CMP step to replace the oxide CMP step.Another advantage of mosaic technology is to form metallic circuit and path in a process cycle, and technology is being had a great attraction aspect electrical property, circuit reliability and the product cost.
JP-200144201 has described mosaic texture and the manufacturing thereof of using barrier film.Use the modification top section of sacrifice layer, and be present in below the barrier film as dielectric layer.Barrier film is as adhesion promoter and diffusion barrier material between copper and the following dielectric.During a CMP step, remove excessive copper.During the 2nd CMP step, remove barrier film.When removing barrier film, also removed copper further.After removing barrier film, remove expendable film with the speed higher (being up to 100 times) than copper.CMP allows to remove excessive copper and barrier film, and has realized the complanation of required tube core and wafer-scale.
For above-mentioned example, CMP instrument 100 can so that: first wafer can be loaded into load/unload station 11, and move to first polished land 13 subsequently, and second wafer is put into CMP instrument 10 by load/unload station 11.On first polished land 13, in the example that provides, can use such as the slurry from the obtainable EPL2361 of Rohm and Haas Electronic Materials and carry out copper CMP.This copper CMP slurry is used for removing the body copper film with high clearance.This technology should stop at the barrier film place effectively.This technology has the selectivity of high copper to barrier/oxide.For the about 1 micron copper layer of thickness, for example, the main processing time on first polished land 13 can be between 70 seconds to 90 seconds.The concluding time of this step can be triggered by endpoint detector.
Subsequently, first wafer moves to second polished land, 15, the second wafers and moves to first polished land 13, and the 3rd wafer is put into CMP instrument 10 by load/unload station 11.In second polished land 15,, can use such as carrying out barrier material CMP from the obtainable slurry such as CUS1351 of Rohm and HaasElectronic Materials for the example that provides.The effect of barrier material technology is in order to remove the barrier film materials such as Ta or TaN.The slurry that is used for the barrier film removal has higher selectivity, and this technology stops at sacrifice layer.For the example that provides, the main processing time on this second polished land 15 can be between 45 seconds and 60 seconds.Can trigger the concluding time by endpoint detector, the perhaps main processing time can have the fixedly duration.
Subsequently, first wafer is moved to the 3rd polished land 17, second wafer is moved to second polished land 15, the 3rd wafer is moved to first polished land 13, and the 4th wafer is put into load/unload station 11.For the example that provides, on the 3rd polished land 17, can remove sacrifice layer.In the semiconductor processes stage that substitutes, can on the 3rd polished land, carry out polishing.The slurry example that for example can be used for polishing can be the Klebosol 1501-50 that obtains from Rohm and Hass ElectronicMaterials.Polishing step as mechanical cleaning step reduces step as last complanation and defective.For the example that provides, the main processing time on the 3rd polished land 17 and had the fixedly duration between 10 seconds to 20 seconds usually.
Next, first wafer is moved to load/unload station 11 to take off from CMP instrument 10, second wafer is moved to the 3rd polished land 17, the 3rd wafer is moved to second polished land 15, the 4th wafer is moved to first polished land 13, and the 5th wafer is put in the CMP instrument 10 by load/unload station 11.
Can repeat above-mentioned sequence, leave CMP instrument 10 up to whole pending wafers.
After each polishing stage, carry out the wafer rinsing step.During this rinsing step, use deionized water or more generally use the cleaning solution of any appropriate, the BTA solution that for example has concentration between 0.0001 to 0.1M, wafer is polished (promptly with low-down pressure and lower speed) lightly, described solution is ejected on the polishing pad with elevated pressures.Usually, carry out rinsing step in the set time of several seconds (typically between 10 to 15 seconds) section.The purpose of rinsing step is in order to remove in chemical residual and the previous polishing step residue from wafer surface.After cleaning step, wafer is mentioned from polishing pad, and move to next polished land and be used for subsequently polishing stage.In the polishing order that the best is adjusted, directly take wafer to the next polishing stage, and need not any stand-by period.Yet in fact, and as mentioned above, wafer is always waited for the longest polishing step that the whole polished land 13,15,17 on the CMP instrument 100 are finished, because whole wafers are installed on the identical wafer transfer mechanism.For the example that provides, on second polished land 15 and the wafer on the 3rd polished land 17 before moving to next procedure, must wait for respectively that the other processing on first polished land 13 finishes about 10 to 45 seconds and 60 to 80 seconds.After flushing, airborne this wait is undesirable, and preferably will avoid, because the surface of wafer wets, and comprises coming the vestige of the chemical residual of already used slurry during the comfortable previous polishing step.In the atmosphere of the height of CMP instrument 10 chemistry active environment, wait for it not being the option of wishing, because this causes the metallicity damage (erosion) on the wafer in the example that provides.Reported evidence as the result's who in air, waits for during handling metal attack.In Fig. 4 A, the wafer 19a that shows continuous processing and therefore during handling, needn't in CMP instrument 10, wait for.Therefore Fig. 4 B shows and must wait in CMP instrument 10 during handling and can not processed continuously wafer 19b.As can be seen, the wafer 19a among Fig. 4 A comprises foxiness 20 on Waffer edge 21.This is to the wafer 19b shown in 4B, and the stand-by period in the CMP instrument 10 was greater than 1 minute.In this case, foxiness 20 is that bore hole is visible.At shorter stand-by period section, damage or foxiness 20 are microscopic.
The present invention has advised the variation of CMP tool configuration and control software, for example is used for eliminating and pending relevant erosion problem such as CMP instrument 10 wet wafers.This software comprises the code that is used to control technology.This software can the processing engine of any appropriate such as computer, such as microcontroller embedded microprocessor or (for example, FPGA) go up to carry out such as programmable gate array.This software can be stored in the storage medium of any appropriate, for example disk, hard disk drive, magnetic tape storage, the CD such as CD-ROM or DVD-ROM, solid-state memory etc.According to the present invention, the washing time section between two continuous polishing steps on each polished land 13,15,17 no longer has the fixedly duration.Replace, all the concluding time of the rinsing step on the polished land 13,15,17 must be triggered by last endpoint signal of whole polished land 13,15,17, and promptly the endpoint signal by the polished land 13,15,17 of polishing step cost maximum duration on it triggers.Can be after the set time section of polished land 13,15,17 be over and done with or endpoint detector detected reach home after, provide this endpoint signal.Can monitor terminal point by several method.Preferable methods is an optical means, depends on the variation of the optical property of polished surface.Can carry out optical measurement according to many modes, all these modes all are included in the scope of the present invention.For example, can using, the reflectivity properties of polished surface changes.In one embodiment of the invention, measure self-excitation light source, reflection on wafer surface during polishing, pass the light of the window that embeds in the polishing pad.Thereby when removing another different layers below exposing of material layer/material from wafer surface, by the quantitative changeization of the light of wafer reflection.Thereby reach home.Second method can be based on the engineering properties of polished surface.For example, in the other embodiment of the present invention, during polishing between measurement or monitoring wafer and the polishing pad and frictional force.When a kind of changes in material is another kind of material, frictional force changes.Therefore, when measuring change in friction force, arrived terminal point.Can carry out this rub measurement according to many modes, all these modes all are included in the scope of the invention.In a further embodiment, can use acoustic method to determine terminal point.Polishing can produce the acoustics energy that can monitor.When wafer surface is removed material layer, thereby when exposing another following different layers/material, acoustical signal will change.Can be used as terminal point.In a further embodiment, use electrical method.For example, can measure the electrical property of wafer.Thereby when removing another different layers below exposing of material layer/material from wafer surface, can be with the change of electrical property as terminal point.
Yet for this set, contingent is the difference of main technique between the time that depends on different polished land 13,15,17, and in the polished land 13,15,17 one or more do not had to carry out or carry out the seldom flushing of (promptly very few).Therefore, after the endpoint signal of the slowest polished land 13,15,17, all the flushing limited time period of continuation on the polished land 13,15,17 is important, and this need provide suitable and enough wafer surface to clean.Be called minimum washing time the extra time that is used for rinsing step according to the present invention.Minimum washing time can be between 1 second to 60 seconds, and typically between 8 seconds to 10 seconds.Need this minimum washing time to guarantee the suitable removal of chemical residual and residue.
So, rinsing step can start from temporal different first constantly in each different polished land 13,15,17, but the time that ends at is gone up second moment identical or that essence is identical, and temporal second can be determined by the polished land 13,15,17 of the polishing step that spends maximum duration constantly.By the time go up essence identical second constantly, mean that the difference in concluding time of the cleaning at each polished land 13,15,17 places or rinsing step is no more than 2 seconds.Therefore, rinsing step spends the different time periods at least two polished land, but may be on each of a plurality of different polished land 13,15,17, and opposite in prior art CMP instrument, no longer has the fixedly duration.
In order on the CMP instrument, to realize the present invention, software option can be set, allow the user in process program, to set specific minimum washing time.Then, when the last endpoint signal of whole polished land 13,15,17 triggers, add this minimum washing time to rinsing step in the time period, promptly actual washing time section is limited by the slowest glossing in any polished land 13,15,17 of CMP instrument 10.So, can be simultaneously or essence side by side mention wafer on whole polished land 13,15,17, and can be sent to immediately in next step polishing step, and need not in atmosphere, to wait for.
Fig. 5 is the simplified block diagram of computer system 25, wherein can specific implementation method of the present invention.Suitably programming with the computer system such as system 25 that realizes the inventive method is a part of the present invention.
Use term " bus system " so that comprise the such as required any mechanism of digital communication each other of the different parts of permission system.The different parts of computer system 25 do not need to be in identical physical location.The each several part of computer system 25 can link to each other via network medium, comprises wireless transmission medium.
Typically, user's input tool 29 comprises user interface adapter 36, is used for keyboard 37 and/or pointing device 38 are linked to each other with bus sub 27.Pointing device 38 can be the indirect pointing device such as mouse, trace ball, touch pad or graphic tablet, or the direct pointing device the touch panel device in being attached to display device 39.
Typically, display subsystem 31 comprises display controller 40, is used for display device 39 is linked to each other with bus sub 27.Display device 39 can be cathode-ray tube (" CRT "), the flat-panel devices such as LCD (" LCD ") gaseous plasma base flat-panel monitor or projector equipment etc.Display controller 40 provides control signal to display device 39, and generally includes display-memory 41, is used to be stored in the pixel that occurs on the display device 39.
Document storage system 30 is provided for permanent (non-volatile) memory of program and data files, and comprises I/0 adapter 42, is used for the ancillary equipment such as the Disk and tape driver is linked to each other with bus sub 27.Typically, ancillary equipment comprises at least one hard disk drive 43 and at least one floppy disk (" disk ") 44.Hard disk drive 43 can comprise cache memory subsystem 45, described cache memory subsystem 45 comprise fast storage with quicken from or to the transmission of hard disk drive.Can also there be other equipment such as CD-ROM drive 46 and CD drive.In addition, system 25 can comprise the hard disk drive that comprises the removable medium module type.Computer system 25 can be attachable by suitable communication adapter and modem and the wide area network such as the internet.
Will be understood by those skilled in the art that the hardware shown in Fig. 5 can depend on specific implementation and change.
For example saved software in the storage subsystem of computer system 25 or on disk, hard disk drive, magnetic tape storage, CD such as CD-ROM or DVD-ROM can be carried out on the processor 26 of computer subsystem 25.The user or must be for example by set via keyboard 37 input technological parameters such as regularly, special process parameter the speed parameter, perhaps must from memory, obtain these parameters.Then when carrying out CMP technology according to the present invention, by controller these parameters are used to control the driving of CMP instrument, be about to these parameters are used to control how long each that drive CMP platform 13,15,17 adopts, what rotary speed and pressure.These parameters make each platform have the identical processing time, appoint promptly to comprise polishing time and alternatively for processing time of the washing time of each platform.
Therefore, the flexible rinsing time period during the present invention has advised during CMP technology between two continuous polishing steps.At for example when making electronic device, having described the present invention forming the CMP technology of using during the copper-connection, but it should be understood that and CMP technology according to the present invention and instrument can also be can be applicable to the CMP technology in other manufacturing process, used.And the CMP instrument of having described 10 comprises three polished land 13,15,17.Yet at other application, alternatively, CMP instrument 10 can alternatively comprise the polished land of different numbers.
In the above-described embodiments, each treatment step on each polished land 13,15,17 includes polishing step and rinsing step.Yet it should be understood that the foregoing description and unrestricted the present invention.For example, the CMP technology according to other embodiments of the invention can be included in two treatment steps that different polished land 13,15,17 places carry out simultaneously.Each treatment step comprises polishing step, and at least one treatment step can also comprise rinsing step.For example, in CMP technology, first treatment step can comprise polishing step and the rinsing step with first duration.Second treatment step can include only the polishing step with second duration.According to the present invention, second duration can be greater than first duration.The total processing that can adjust first treatment step then is continuously applied, and makes both essence of first and second treatment steps side by side finish.Side by side finish by essence, mean that the difference between concluding time of the concluding time of first treatment step and second treatment step is not more than 2 seconds.Because the polishing time at concrete CMP technology has fixed duration, carry out the adjustment of total processing duration of first treatment step by the duration of regulating rinsing step.So, first wafer that experiences first treatment step needn't be waited for second wafer that experiences second treatment step.Similarly, in the CMP technology that comprises more than the processing steps of two whiles, can set the duration of different disposal step, make the whole treatment step essence on the different polished land 13,15,17 finish simultaneously, therefore, before being sent to next polished land 13,15,17, there is not wafer in air, to wait for.
Method and apparatus according to the invention shows two significant advantage.At first, do not exist or do not exist in fact the wet wafer between two polishing steps in air, to wait for, therefore can make the damage risk minimization such as corroding.Second advantage is that because the CMP stage of in the end finishing, the wafer of having handled only stands the rinsing step during the minimum washing time not to the negative interaction generation of tool production ability.Here do not increase the extra time, if for example set rinsing step the fixedly concluding time will be like this because must comprise margin of safety in this case.Another advantage of the present invention is to carry out polishing and flushing on identical chip carrier.In most prior art CMP instrument, flushing may be carried out on the chip carrier that is different from the chip carrier of carrying out polishing step.This has caused bigger instrument, because take the too many place of ultra-clean chamber for example but disadvantageous.
Although it should be understood that here and preferred embodiment, ad hoc structure and configuration and material have been discussed, under the situation that does not break away from the scope of the invention and spirit, can make different variations and change on form and the details at equipment according to the present invention.
Claims (15)
1. one kind has at least two polished land (13,15,17) chemical mechanical planarization apparatus (10), each described polished land all has the device that is used for carrying out simultaneously treatment step, each treatment step includes polishing step, and at least one of described treatment step also comprises the rinsing step after the described polishing step, each treatment step has total treatment step time, and described equipment (10) also comprises control device, be suitable for setting total treatment step time, so that each polished land (13,15, the difference of the concluding time of the treatment step 17) is not more than 2 seconds, and wherein said setting is to realize by the duration of regulating rinsing step.
2. equipment according to claim 1 (10) also comprises the device that is used for determining by concluding time of slow polishing step the concluding time of each treatment step.
3. equipment according to claim 2 (10) also comprises endpoint detector, is used for determining the concluding time of treatment step.
4. equipment according to claim 1 (10), each treatment step comprises polishing step and rinsing step subsequently, and wherein, control device is suitable for controlling the duration of each rinsing step, makes by concluding time of previous polishing step and the difference between concluding time of slow polishing step and carry out flushing during the minimum determined time period of washing time sum.
5. equipment according to claim 4, wherein, control device was suitable for controlling described minimum washing time between 1 to 60 second.
6. equipment according to claim 5, wherein, control device was suitable for controlling described minimum washing time between 8 to 10 seconds.
7. equipment according to claim 1 (10), wherein, described equipment (10) comprises first, second and the 3rd polished land (13,15,17).
8. equipment according to claim 7 (10), wherein, described first, second is suitable for carrying out respectively copper CMP, barrier material CMP and polishing with the 3rd polished land (13,15,17).
9. method that is used for the chemical-mechanical planarization of substrate, described method comprises the treatment step of at least two whiles, each treatment step includes polishing step, and at least one of described treatment step also comprises the rinsing step after the described polishing step
And, wherein, control whole treatment steps by the duration of regulating rinsing step and make the difference of concluding time of whole treatment steps be not more than 2 seconds.
10. method according to claim 9 wherein, is determined the concluding time of whole treatment steps by concluding time of slow polishing step.
11. method according to claim 9, wherein, each treatment step comprises the rinsing step after the described polishing step, and by concluding time of previous polishing step and the difference and each described rinsing step of execution during the minimum determined time period of washing time sum between concluding time of slow polishing step.
12. according to each described method of claim 9 to 11, wherein, substrate is the Semiconductor substrate that semiconductor wafer or section processes are crossed.
13. method of making electric or electronic device, described method comprises the chemical-mechanical planarization of carrying out substrate, chemical-mechanical planarization comprises the treatment step of at least two whiles, each treatment step comprises polishing step, and at least one treatment step of described treatment step also comprises the rinsing step after the described polishing step, wherein controls whole treatment steps by the duration of regulating rinsing step and makes the difference of concluding time of whole treatment steps be not more than 2 seconds.
14. method according to claim 13, wherein, described substrate is the Semiconductor substrate that semiconductor wafer or section processes are crossed.
15. a computer system (25) comprises being used to receive parameter and sending the input unit of described parameter to the CMP instrument, is used for carrying out according to each described method of claim 9 to 12.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP04104686 | 2004-09-27 | ||
| EP04104686.3 | 2004-09-27 | ||
| PCT/IB2005/053043 WO2006035337A1 (en) | 2004-09-27 | 2005-09-15 | Flexible rinsing step in a cmp process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101065218A CN101065218A (en) | 2007-10-31 |
| CN101065218B true CN101065218B (en) | 2011-08-17 |
Family
ID=35501116
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2005800407303A Expired - Fee Related CN101065218B (en) | 2004-09-27 | 2005-09-15 | Flexible rinsing step in a CMP process |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP1796873A1 (en) |
| JP (1) | JP2008515182A (en) |
| KR (1) | KR20070055567A (en) |
| CN (1) | CN101065218B (en) |
| TW (1) | TW200624221A (en) |
| WO (1) | WO2006035337A1 (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2141737B1 (en) * | 2007-04-20 | 2013-07-03 | Ebara Corporation | Polishing apparatus and program thereof |
| CN109262442A (en) * | 2017-07-18 | 2019-01-25 | 中芯国际集成电路制造(上海)有限公司 | A kind of system and chemical machinery polishing system for cleaning chemical-mechanical grinding device |
| KR102434418B1 (en) * | 2022-03-10 | 2022-08-22 | (주)뉴이스트 | Manufacturing Method for Carrier Used in Polishing Wafer for Seimi-Conductor |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5738574A (en) * | 1995-10-27 | 1998-04-14 | Applied Materials, Inc. | Continuous processing system for chemical mechanical polishing |
| US6293845B1 (en) * | 1999-09-04 | 2001-09-25 | Mitsubishi Materials Corporation | System and method for end-point detection in a multi-head CMP tool using real-time monitoring of motor current |
| WO2001064395A2 (en) * | 2000-03-01 | 2001-09-07 | Speedfam-Ipec Corporation | A modular control system and method for a cmp tool |
| US6602724B2 (en) * | 2000-07-27 | 2003-08-05 | Applied Materials, Inc. | Chemical mechanical polishing of a metal layer with polishing rate monitoring |
-
2005
- 2005-09-15 JP JP2007533018A patent/JP2008515182A/en not_active Withdrawn
- 2005-09-15 EP EP05798546A patent/EP1796873A1/en not_active Withdrawn
- 2005-09-15 KR KR1020077006805A patent/KR20070055567A/en not_active Application Discontinuation
- 2005-09-15 WO PCT/IB2005/053043 patent/WO2006035337A1/en active Application Filing
- 2005-09-15 CN CN2005800407303A patent/CN101065218B/en not_active Expired - Fee Related
- 2005-09-23 TW TW094133140A patent/TW200624221A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| KR20070055567A (en) | 2007-05-30 |
| EP1796873A1 (en) | 2007-06-20 |
| TW200624221A (en) | 2006-07-16 |
| WO2006035337A1 (en) | 2006-04-06 |
| JP2008515182A (en) | 2008-05-08 |
| CN101065218A (en) | 2007-10-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6276997B1 (en) | Use of chemical mechanical polishing and/or poly-vinyl-acetate scrubbing to restore quality of used semiconductor wafers | |
| US7270597B2 (en) | Method and system for chemical mechanical polishing pad cleaning | |
| US6171436B1 (en) | Apparatus for removing slurry particles | |
| US20070095367A1 (en) | Apparatus and method for atomic layer cleaning and polishing | |
| CN101271835B (en) | Method of manufacturing a semiconductor device and a semiconductor manufacturing equipment | |
| US7416472B2 (en) | Systems for planarizing workpieces, e.g., microelectronic workpieces | |
| Fury | Emerging developments in CMP for semiconductor planarization | |
| CN101103444A (en) | Cmp polishing system and abrasive solution | |
| CN100533674C (en) | Method and abrasive slurry for chemical mechanical polishing, and semiconductor device and its manufacture method | |
| JP3970439B2 (en) | Manufacturing method of semiconductor device | |
| Wei et al. | Cleaning methodology of small residue defect with surfactant in copper chemical mechanical polishing post-cleaning | |
| CN101065218B (en) | Flexible rinsing step in a CMP process | |
| CN101590615B (en) | Tungsten chemical mechanical polishing method | |
| TW518685B (en) | CMP process for a damascene pattern | |
| Choi et al. | A model of material removal and post process surface topography for copper CMP | |
| Hocheng et al. | A comprehensive review of endpoint detection in chemical mechanical planarisation for deep-submicron integrated circuits manufacturing | |
| JP2009088486A (en) | High throughput low topography copper cmp process | |
| CN101352833A (en) | Method for polishing copper by chemical and mechanical methods | |
| JP2003077921A (en) | Method for manufacturing semiconductor device | |
| JP2010278448A (en) | Polishing platen rinse for controlled passivation of silicon/polysilicon surfaces | |
| Fang et al. | Advanced process control in dielectric chemical mechanical polishing (CMP) | |
| TWI408739B (en) | Systems, methods and slurries for chemical mechanical polishing | |
| JP2002217141A (en) | Polishing method, polishing apparatus, manufacturing method of semiconductor device and semiconductor device | |
| CN107393819A (en) | A kind of Ginding process | |
| JP2006517737A (en) | Polishing apparatus and two-step polishing method for metal layer of integrated circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| ASS | Succession or assignment of patent right |
Owner name: NXP CO., LTD. Free format text: FORMER OWNER: KONINKLIJKE PHILIPS ELECTRONICS N.V. Effective date: 20080411 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20080411 Address after: Holland Ian Deho Finn Applicant after: Koninkl Philips Electronics NV Address before: Holland Ian Deho Finn Applicant before: Koninklijke Philips Electronics N.V. |
|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20110817 Termination date: 20130915 |