JP2010182809A - Semiconductor light-emitting apparatus - Google Patents

Semiconductor light-emitting apparatus Download PDF

Info

Publication number
JP2010182809A
JP2010182809A JP2009023898A JP2009023898A JP2010182809A JP 2010182809 A JP2010182809 A JP 2010182809A JP 2009023898 A JP2009023898 A JP 2009023898A JP 2009023898 A JP2009023898 A JP 2009023898A JP 2010182809 A JP2010182809 A JP 2010182809A
Authority
JP
Japan
Prior art keywords
light
resin member
upper surface
resin
semiconductor light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2009023898A
Other languages
Japanese (ja)
Inventor
Yasuji Chinone
Kazuchika Hibiya
Masaki Kajita
康仁 千野根
一親 日比谷
正喜 梶田
Original Assignee
Stanley Electric Co Ltd
スタンレー電気株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stanley Electric Co Ltd, スタンレー電気株式会社 filed Critical Stanley Electric Co Ltd
Priority to JP2009023898A priority Critical patent/JP2010182809A/en
Publication of JP2010182809A publication Critical patent/JP2010182809A/en
Application status is Pending legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85909Post-treatment of the connector or wire bonding area
    • H01L2224/8592Applying permanent coating, e.g. protective coating

Abstract

<P>PROBLEM TO BE SOLVED: To radiate white light with small color tone unevenness to an irradiated surface, in a semiconductor light-emitting apparatus having a cavity structure package, which seals a semiconductor light-emitting element mounted in the cavity with a sealing resin which disperses one or more phosphors. <P>SOLUTION: In a semiconductor light-emitting apparatus, a red phosphor layer 7 is arranged so as to cover a blue LED element 5 mounted in a cavity 2. A green phosphor layer 8, a binder resin 9, and a second resin member 11 are sequentially arranged on the red phosphor layer. In addition, a relationship of a distance (a) from an upper surface 5a of the LED element 5 to an upper surface 10a of the first sealing resin 10, a thickness (b) of the second resin member 11, and a distance (c) from a light axis X to a periphery 11c, is set so that an angle θ between the light axis X of the LED element 5 and a line C crossing with the light axis X on the upper surface 5a of the LED element 5 and crossing with the periphery 11c of the upper surface 11a of the second resin member 11 becomes smaller than a critical angle τ of light ray incoming from the second resin member 11 to an air layer 12 (θ<τ). <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

本発明は半導体発光装置に関するものであり、詳しくは、半導体発光素子と一種または複数種の蛍光体との組み合わせからなる半導体発光装置に関する。 The present invention relates to a semiconductor light emitting device and, more particularly, to a semiconductor light-emitting device comprising a combination of a semiconductor light emitting element and one or more phosphors.

半導体発光素子を発光源とし、該半導体発光素子の発光色とは異なる色調の光を照射光とする半導体発光装置は、一般的に可視光領域の短波長側あるいは紫外線領域に発光ピーク波長を有する半導体発光素子と一種以上の蛍光体との組み合わせにより構成される。 The semiconductor light-emitting device as a light emitting source, a semiconductor light emitting device according to the irradiation light light of a different color from the emission color of the semiconductor light emitting element generally having a peak emission wavelength shorter or ultraviolet regions of the visible light region It constituted by a combination of a semiconductor light emitting element and one or more phosphors.

例えば、半導体発光素子が青色光を発光する青色LED素子の場合、青色LED素子が発する青色光に励起されて青色の補色となる黄色光に波長変換する黄色蛍光体を用いることによって、青色LED素子から発せられた青色光の一部が黄色蛍光体を励起することにより波長変換された黄色光と、青色LED素子から発せられた青色光の一部との加法混色によって白色光を得ることができる。 For example, when the blue LED element semiconductor light emitting element emits blue light by using a yellow phosphor that wavelength-converted into yellow light by being excited in the blue light emitted from the blue LED element becomes a complementary color of blue, the blue LED element it is possible to obtain white light by additive color mixing of the yellow light whose wavelength is converted, a part of blue light emitted from the blue LED element by a part of the emitted blue light excites the yellow phosphor from .

同様に、半導体発光素子が青色光を発光する青色LED素子の場合、青色LED素子が発する青色光に励起されて夫々緑色光及び赤色光に波長変換する緑色蛍光体及び赤色蛍光体の2種類の蛍光体からなる混合蛍光体を用いることによって、青色LED素子から発せられた青色光の一部が混合蛍光体を励起することにより波長変換された緑色光及び赤色光と、青色LED素子から発せられた青色光の一部との加法混色によって白色光を得ることができる。 Similarly, the semiconductor light emitting element is case of blue LED element emitting blue light, two kinds of green and red phosphors for wavelength conversion to be excited in the blue light emitted from the blue LED element, respectively green light and red light by using a mixed phosphor composed of a phosphor, a green light and red light whose wavelength is converted by a part of blue light emitted from the blue LED element excites phosphor mixture, emitted from the blue LED element it is possible to obtain white light by additive color mixing of a part of the blue light is.

また、半導体発光素子が紫外光を発する紫外LED素子の場合、紫外LED素子が発する紫外光に励起されて夫々青色光、緑色光及び赤色光に波長変換する青色蛍光体、緑色蛍光体及び赤色蛍光体の3種類の蛍光体からなる混合蛍光体を用いることによって、紫外LED素子から発せられた紫外光が混合蛍光体を励起することにより波長変換された青色光、緑色光及び赤色光の加法混色によって白色光を得ることができる。 Further, when the semiconductor light emitting element is an ultraviolet LED element emitting ultraviolet light, a blue phosphor that wavelength conversion is excited to ultraviolet light ultraviolet LED element emits respectively blue light, green light and red light, a green phosphor and a red phosphor by using a mixed phosphor composed of three kinds of phosphor body, a blue light whose wavelength is converted by the ultraviolet light emitted from ultraviolet LED element excites phosphor mixture, additive color mixing of green light and red light white light can be obtained by.

更に、LED素子が発する種々の色調の光とその光で励起されて種々の波長に波長変換する蛍光体とを適宜に組み合わせることによって白色光以外の種々な色調の光を得ることができる。 Furthermore, it is possible to obtain light of various colors other than white light by being excited various shades of light LED elements emitted and its light appropriately combining a phosphor for wavelength-converting the various wavelengths.

具体的な半導体発光装置50としては、例えば、図6に示すような構成のものが従来より提案されている。 Specific semiconductor light emitting device 50, for example, constituted as shown in FIG. 6 have been proposed.

それは、キャビティ構造のパッケージ51の底面上に青色LED素子52が載置され、キャビティ内に充填された、透光性を有する熱硬化性のバインダー樹脂に赤色蛍光体と緑色蛍光体の混合蛍光体が分散されてなる封止樹脂によって青色LED素子52が樹脂封止された構成とされている。 It blue LED element 52 on the bottom surface of the package 51 of the cavity structure is placed, filled in the cavity, the red and green phosphors mixed phosphor thermosetting binder resin having translucency There has been configured to blue LED element 52 is sealed in resin with a sealing resin is dispersed.

この場合、赤色蛍光体及び緑色蛍光体はバインダー樹脂よりも比重が大きく且つ赤色蛍光体の中位径が緑色蛍光体の中位径よりも大きくしてある。 In this case, the median diameter of the red phosphor and green phosphor specific gravity than binder resins is large and a red phosphor is made larger than the median diameter of the green phosphor. そのため、バインダー樹脂内において赤色蛍光体が緑色蛍光体よりも沈殿速度が速く、封止樹脂の充填後に十分な沈殿時間を設けることによりバインダー樹脂53の下部の青色LED素子52近傍に優先的に赤色蛍光体が堆積して赤色蛍光体層54を形成しその上に緑色蛍光体が堆積して緑色蛍光体層55を形成している。 Therefore, the red phosphor is faster sedimentation velocity than the green phosphor in the binder resin, preferentially red blue LED element 52 near the bottom of the binder resin 53 by providing a sufficient precipitation time after filling of the sealing resin phosphor are deposited to form a red phosphor layer 54 green phosphor is deposited thereon to form a green phosphor layer 55.

このように、励起光源である青色LED素子52側に赤色蛍光体層54を配置することにより、青色LED素子52が発する青色光で励起された赤色蛍光体が発する赤色光では赤色蛍光体層54上に位置する緑色蛍光体層55における再吸収及び二次励起は行われず、発光装置の高輝度化及び発光装置からの照射光の色調の赤色側(暖色系側)へのシフト(スペクトル分布の長波長側へのシフト)の防止が可能となる(例えば、特許文献1参照。)。 Thus, by arranging the red phosphor layer 54 to the blue LED element 52 side is an excitation light source, a red phosphor layer 54 is a red light red phosphor excited by the blue light emitted from the blue LED element 52 emits reabsorption and secondary excitation in the green phosphor layer 55 located above is not performed, the shift (spectral distribution of the high luminance and the red side of the color tone of the illumination light from the light-emitting device of the light emitting device (warm side) prevention of shift) to the long wavelength side becomes possible (for example, see Patent Document 1.).

特開2005−277127号公報 JP 2005-277127 JP

ところで、上記半導体発光装置50は図からもわかるように、バインダー樹脂53の光出射面56は略平面状に形成されており、また、この光出射面56はバインダー樹脂53よりも屈折率が低い、半導体発光装置50外の空気層57との界面を形成している。 However, as can be seen from the semiconductor light emitting device 50 is drawing, the light emitting surface 56 of the binder resin 53 is formed in a substantially flat shape, also the light exit surface 56 has a lower refractive index than the binder resin 53 , to form an interface between the semiconductor light-emitting device 50 out of the air layer 57.

そこで、青色LED素子52から発せられた青色光の一部は該青色LED素子52の近傍に位置する赤色蛍光体層54を励起して赤色光を発光させ、一部は赤色蛍光体層54を透過してその上に位置する緑色蛍光体層55を励起して緑色光を発光させ、一部は赤色蛍光体層54及び緑色蛍光体層55を青色光のまま通過する。 Therefore, a part of blue light emitted from the blue LED element 52 to emit a red light to excite the red phosphor layer 54 located in the vicinity of the blue LED element 52, a certain red phosphor layer 54 transmitted by emitting a green light to excite the green phosphor layer 55 located thereon, some of which pass through the red phosphor layer 54 and the green phosphor layer 55 remains blue light.

そして、赤色光、緑色光及び青色光の混合光による白色光がバインダー樹脂53内を導光されて光出射面56に到達する。 Then, red light, white light by mixing light of the green light and blue light is guided to the binder resin 53 and reaches the light exit surface 56.

光出射面56に到達した白色光のうち、光出射面56の到達点において該光出射面56の法線Nとなす角(交角)θが臨界角τよりも小さい(θ<τ)光線L αは光出射面56で屈折されて空気層57に向けて出射され、交角θが臨界角τと同じ(θ=τ)光線L βは光出射面56と平行に進む。 Of the white light that has reached the light exit surface 56, the normal N and the angle of the light exit surface 56 (intersection angle) theta is less than the critical angle tau in arrival point of the light exit surface 56 (theta <tau) rays L α is refracted at the light exit surface 56 is emitted toward the air layer 57, the crossing angle theta proceeds in parallel the same (θ = τ) rays L beta to the critical angle tau and light exit surface 56.

これに対し、交角θが臨界角τよりも大きい(θ>τ)光線L γは光出射面56で反射(全反射)されて再度バインダー樹脂53側に戻るため光出射面56から空気層57に向けて出射されることはない。 In contrast, the crossing angle theta is greater than the critical angle tau (theta> tau) air layer from light L gamma is reflected on the light exit surface 56 (total reflection) by the light exit surface 56 to return to the binder resin 53 side again 57 is not to be emitted toward the.

そこで、光出射面56で全反射されて再度バインダー樹脂53側に戻った光線L γはパッケージ51の底面に向けて導光され、底面に到達した光線L γは該底面で反射されて再再度バインダー樹脂53側に戻って光出射面56に向けて導光され、光出射面56で屈折されて空気層57に向けて出射される。 Therefore, the light beam L gamma returned to total reflection has been re binder resin 53 side on the light emission surface 56 is guided toward the bottom of the package 51, the light beam L gamma reaching the bottom again once again be reflected by the bottom surface returning to the binder resin 53 side is guided toward the light exit surface 56, it is refracted at the light exit surface 56 is emitted toward the air layer 57.

このとき、光線L γは、光出射面56で全反射されてからパッケージ51の底面で反射されて光出射面56から空気層57に向けて出射されるまでの間(光路進行中)に赤色蛍光体層54及び緑色蛍光体層55を夫々2回ずつ通過することになる。 At this time, the light beam L gamma, red during the period from being totally reflected by the light exit surface 56 is reflected by the bottom surface of the package 51 from the light exit surface 56 to be emitted toward the air layer 57 (optical path in progress) It will pass through the phosphor layer 54 and the green phosphor layer 55 by each twice.

すると、光線L γは各蛍光体層54、55を通過する毎に該蛍光体層54、55を励起する青色光の光量が低減され、また、緑色蛍光体層55で発せられた緑色光で赤色蛍光体層54が励起(二次励起)されて赤色光の光量が増大すると共に赤色蛍光体層54の励起光となる緑色光の光量が低減する。 Then, light L gamma light quantity of the blue light excites the fluorescent material layer 54 and 55 each passing through the respective phosphor layers 54, 55 is reduced, and in the green light emitted by the green phosphor layer 55 amount of the excitation light to become green light of the red phosphor layer 54 with the red phosphor layer 54 is excited (secondary excitation) light amount of the red light increases is reduced.

その結果、白色光を照射する半導体発光装置50において、パッケージ51の底面での反射が繰り返されるにつれて照射光の色調の赤色側(暖色系側)へのシフト(スペクトル分布の長波長側へのシフト)が部分的に大きくなり、照射光に色調むら有する発光装置となってしまう。 Shifting a result, in the semiconductor light-emitting device 50 which emits white light, to the long wavelength side of the shift (the spectral distribution of the red side of the color tone of the illumination light as reflected at the bottom of the package 51 is repeated to (warm side) ) partially increases, resulting in a light emitting device having color unevenness in illumination light.

そこで、光出射面での全反射を低減するために、バインダー樹脂の光出射面を空気層側に凸状の球面あるいは非球面とすることが考えられるが、キャビティ構造のパッケージにおいては、キャビティ内に充填した樹脂で球面あるいは非球面を形成することは製造上極めて実現が困難であり、実現したとしても自動機による吸着が困難なために配線基板上への自動実装に対応することは難しい。 Therefore, in order to reduce the total reflection at the light emitting surface, but the light emitting surface of the binder resin is considered that a convex spherical or aspherical surface on the air layer side, the package cavity structure, the cavity it is difficult to resin in realizing extremely manufacture is to form a spherical or aspherical filled in, it is difficult to adsorption by an automatic machine for automatic mounting onto the wiring board for difficult even realized.

そこで、本発明は上記問題に鑑みて創案なされたもので、その目的とするところは、キャビティ構造のパッケージを有しそのキャビティ内に実装された半導体発光素子を一種または複数種の蛍光体を分散した封止樹脂で樹脂封止した半導体発光装置において、照射面に色調むらの少ない白色光を照射することが可能な半導体発光装置を実現することにある。 The present invention has been made made in view of the above problems, it is an object of distributing the one or more phosphors semiconductor light emitting element mounted within the cavity having a package cavity structure in the semiconductor light-emitting device resin-sealed with a sealing resin that is to realize a semiconductor light emitting device capable of irradiating a little color unevenness white light irradiated surface.

上記課題を解決するために、本発明の請求項1に記載された発明は、凹状のキャビティを有するパッケージと、 In order to solve the above problems, the invention described in claim 1 of the present invention includes a package having a concave cavity,
前記キャビティの底面上に実装された半導体発光素子と、 A semiconductor light emitting element mounted on the bottom surface of the cavity,
前記半導体発光素子を覆うように前記キャビティの底面側に位置する一種または複数種の蛍光体層と、 And one or more of the phosphor layer located on the bottom side of the cavity so as to cover the semiconductor light emitting element,
前記蛍光体層の上に位置し、前記蛍光体層を構成する蛍光体とで第1の封止樹脂を形成するバインダー樹脂と、 A binder resin, wherein located on the phosphor layer to form a first sealing resin in the phosphor constituting the phosphor layer,
前記バインダー樹脂の上に配置された第2の樹脂部材とを備え、 And a second resin member which is disposed on the binder resin,
前記第2の樹脂部材の上面は、前記半導体発光素子の上面の中心を通り該第2の樹脂部材の上面と交差する直線と、前記第2の樹脂部材の上面の前記直線との交点における法線とのなす角が、前記半導体発光素子の上面の中心からの入射光線に対する臨界角よりも小さくなるように設定されていることを特徴とするものである。 The top surface of the second resin member, Law at the intersection of the straight line that intersects the upper surface of the semiconductor top surface around the street the second resin member of the light emitting element, and the straight line of the upper surface of the second resin member angle between line, and is characterized in that it is set to be smaller than the critical angle for incident light from the center of the upper surface of the semiconductor light emitting element.

また、本発明の請求項2に記載された発明は、請求項1において、前記第2の樹脂部材の上面は、平面形状、錐台形状及び三次元曲面形状の形状のうちいずれか1つであることを特徴とするものである。 Further, the invention described in claim 2 of the present invention, in claim 1, wherein the upper surface of the second resin member, the planar shape, any one of the shape of the frustum shape and three-dimensional curved surface shape it is characterized in that.

また、本発明の請求項3に記載された発明は、請求項1または2のいずれか1項において、前記第2樹脂部材の厚みにより、前記第2の樹脂部材の上面は、前記半導体発光素子の上面の中心を通り該第2の樹脂部材の上面と交差する直線と、前記第2の樹脂部材の上面の前記直線との交点における法線とのなす角が、前記半導体発光素子の上面の中心からの入射光線に対する臨界角よりも小さくなるように設定されていることを特徴とするものである。 Further, The invention described in claim 3 of the present invention, in any one of claims 1 or 2, the thickness of the second resin member, the upper surface of the second resin member, the semiconductor light emitting element and the straight line that intersects the upper surface of the center of the street the second resin member on the upper surface of, the angle between the normal line at the intersection with the straight line of the upper surface of the second resin member, the upper surface of the semiconductor light emitting element and it is characterized in that it is set to be smaller than the critical angle for incident light from the center.

また、本発明の請求項4に記載された発明は、請求項1から3のいずれか1項において、前記半導体発光素子は青色LED素子であり、且つ前記蛍光体層は前記キャビティの底面側から順に赤色蛍光体層、緑色蛍光体層であることを特徴とするものである。 Further, The invention described in claim 4 of the present invention, in any one of claims 1 to 3, wherein the semiconductor light emitting element is a blue LED element, and the phosphor layer from the bottom side of the cavity turn red phosphor layer, it is characterized in that a green phosphor layer.

また、本発明の請求項5に記載された発明は、請求項1から3のいずれか1項において、前記半導体発光素子は紫外LED素子であり、且つ前記蛍光体層は前記キャビティの底面側から順に赤色蛍光体層、緑色蛍光体層、青色蛍光体層であることを特徴とするものである。 Further, the invention described in claim 5 of the present invention, in any one of claims 1 3, wherein the semiconductor light emitting element is an ultraviolet LED element, and the phosphor layer from the bottom side of the cavity turn red phosphor layer, a green phosphor layer, and is characterized in that a blue phosphor layer.

本発明の半導体発光装置を、キャビティ内の底面上に実装された半導体発光素子を覆うようにキャビティの底面側に一種または複数種の蛍光体層を配置し、その上に2種類の樹脂層を配置した。 The semiconductor light-emitting device of the present invention, one kind or plural kinds of phosphor layers disposed on the bottom side of the cavity so as to cover the semiconductor light emitting element mounted on the bottom surface of the cavity, the two kinds of resin layers thereon It was placed. そして、上側樹脂層の上面を、半導体発光素子の上面の中心を通り該上側樹脂層の上面と交差する直線と、上側樹脂層の上面の前記直線との交点における法線とのなす角が、樹脂層側からの入射光線に対する臨界角よりも小さくなるように設定した。 Then, the upper surface of the upper resin layer, and a straight line that intersects the upper surface which passes through the center upper side resin layer of the upper surface of the semiconductor light emitting element, the angle between the normal line at the intersection with the straight line of the upper surface of the upper resin layer, It was set to be smaller than the critical angle for incident light from the resin layer side.

半導体発光装置をこのような構成とすることにより、半導体発光素子から発せられて外部に対する光出射面となる上側樹脂層の上面に到達した光及び半導体発光素子からの光で励起された蛍光体から発せられて上側樹脂層の上面に到達した光が共にその面で反射(全反射)されることなく外部に照射される。 By the semiconductor light-emitting device with such a configuration, the excited phosphor with light from the light and the semiconductor light emitting element and reached the upper surface of the upper resin layer serving as a light exit surface for the emitted and externally from the semiconductor light emitting element emitted by the light that has reached the upper surface of the upper resin layer is irradiated together outside without being reflected (total reflection) in the surface.

その結果、半導体発光装置からの照射光は、第1の封止樹脂の上面での全反射により、蛍光体を二次励起することが少なくなり、色調のシフトや色調のむらの少ない白色光を照射することが可能となる。 As a result, light emitted from the semiconductor light emitting device, illuminated by total reflection at the top surface of the first sealing resin, it is less of secondary excitation of the phosphor, the less white light unevenness of color shift and color it is possible to become.

また、半導体発光装置からの照射光は、部分的に色調の赤色側(暖色系側)へのシフト(スペクトル分布の長波長側へのシフト)を有することはなく、照射面に色調むらの少ない白色光を照射することが可能となった。 The irradiation light from the semiconductor light emitting device, partially not have a red side tone (shift to the long wavelength side of the spectral distribution) shift to (warm side), less color unevenness on the irradiation surface it becomes possible to emit white light.

本発明の実施例1に係る説明図である。 It is an explanatory diagram according to a first embodiment of the present invention. 本発明の実施例2に係る説明図である。 It is an explanatory diagram according to a second embodiment of the present invention. 本発明の実施例2に係る応用例の説明図である。 It is an explanatory view of an application example according to the second embodiment of the present invention. 本発明の実施例3に係る説明図である。 It is an explanatory diagram according to a third embodiment of the present invention. 同じく、本発明の実施例3に係る説明図である。 Similarly, an explanatory diagram according to a third embodiment of the present invention. 従来例に係る説明図である。 It is an explanatory diagram according to a conventional example.

以下、この発明の好適な実施形態を図1〜図5を参照しながら、詳細に説明する(同一部分については同じ符号を付す)。 Hereinafter, with reference to FIGS. 1 to 5 the preferred embodiment of the present invention, (denoted by the same reference numerals for the same portions) described in detail. 尚、以下に述べる実施形態は、本発明の好適な具体例であるから、技術的に好ましい種々の限定が付されているが、本発明の範囲は、以下の説明において特に本発明を限定する旨の記載がない限り、これらの実施形態に限られるものではない。 Incidentally, the embodiments described below are preferred specific examples of the present invention, various technically preferable limitations are imposed, the scope of the present invention, particularly to limit the present invention in the following description unless otherwise stated the effect is not limited to these embodiments.

図1は本発明の半導体発光装置に係る実施例1の説明図である。 Figure 1 is an explanatory view of the first embodiment of the semiconductor light-emitting device of the present invention.

本実施例の半導体発光装置30は、凹状のキャビティ2を有するパッケージ3の底部3aの上面側に互いに分離・独立した複数の導体パターン4a、4bが位置し、夫々パッケージ3を貫通して側面を経て底部3aの下面まで延長されている。 The semiconductor light emitting device 30 of this embodiment, a plurality of conductor patterns 4a separated and independent from each other on the upper surface of the bottom portion 3a of the package 3 with a concave cavity 2, 4b are located, the sides through the respective package 3 It is extended to the lower surface of the bottom portion 3a through. パッケージ3はガラスエポキシ樹脂等の樹脂材料からなっている。 Package 3 is made of a resin material such as glass epoxy resin.

パッケージ3の底部3aの上面側に位置する導体パターン4a上には、発光源となる半導体発光素子として青色光を発光する青色LED素子(以下、LED素子と略称する)5が導電性接合部材(図示せず)を介して固定され、LED素子5の下部電極と導体パターン4aとの電気的導通が図られている。 On the conductor pattern 4a is positioned on the upper surface of the bottom portion 3a of the package 3, blue LED element that emits blue light as a semiconductor light-emitting element to be a luminescent source (hereinafter, abbreviated as LED element) 5 is conductive bonding members ( is fixed through the not shown), electrical connection between the lower electrode and the conductor patterns 4a of the LED element 5 is achieved. 一方、LED素子5の上部電極はボンディングワイヤ6を介して導体パターン4bに接続され、LED素子5の上部電極と導体パターン4bとの電気的導通が図られている。 On the other hand, the upper electrode of the LED element 5 is connected to the conductor pattern 4b through the bonding wires 6, electrical connection between the upper electrode and the conductor pattern 4b of the LED element 5 is achieved.

なお、LED素子は必ずしも該LED素子の電極と導体パターンとの接続をボンディングワイヤを介して行うタイプのものである必要はなく、バンプ電極を介して接続されるフリップチップタイプのものでもよい。 Incidentally, the LED elements need not necessarily of the type carried out through a bonding wire connections between the electrode and the conductor patterns of the LED elements may be of a flip chip type which is connected via a bump electrode.

LED素子5が配置されたキャビティ2内の下部には、励起光で励起されて赤色光を発光する赤色蛍光体7aと緑色光を発光する緑色蛍光体8aの2種類の蛍光体を透光性を有する熱硬化性のバインダー樹脂9に分散してなる第1の封止樹脂10が充填されている。 At the bottom of the LED element 5 in the cavity 2 arranged, two types of phosphors translucent green phosphor 8a for emitting a red phosphor 7a and green light by being excited by excitation light to emit red light It is filled with the first sealing resin 10 having dispersed in the thermosetting binder resin 9 having. このとき第1の封止樹脂10の上面10aは平面状に形成されている。 In this case the upper surface 10a of the first sealing resin 10 is formed in a planar shape.

この第1の封止樹脂10はキャビティ2内に充填後に十分な沈殿時間を設けることにより、バインダー樹脂9の下部のLED素子5近傍に優先的に赤色蛍光体7aが堆積して赤色蛍光体層7を形成されその上に緑色蛍光体8aが堆積して緑色蛍光体層8が形成されている。 By the first sealing resin 10 is provided with a sufficient precipitation time after filling into the cavity 2, the red phosphor layer to the LED element 5 near the bottom and deposited preferentially red phosphor 7a of the binder resin 9 green fluorescent layer 8 green phosphor 8a is deposited thereon is formed a 7 is formed.

つまり、発光源側から順に発光波長(蛍光波長)が長い蛍光体層を堆積させたものであり、その方法は種々考えられるが「背景技術」で述べたように、長波長の蛍光を発する蛍光体を短波長の蛍光を発する蛍光体よりも中位径を大きくすることにより沈澱速度の違いで積層順を制御することができる。 That, which emission wavelength in the order from the light source side (fluorescence wavelength) was deposited long phosphor layer, the method as is mentioned in the are various but the "Background", fluorescence emitted fluorescence having a long wavelength it is possible to control the stacking order in the difference in precipitation speed by increasing the median diameter than the phosphor body emits fluorescence of short wavelength.

キャビティ2内の、第1の封止樹脂10の上には透光性樹脂からなる第2の樹脂部材11が充填されており、その上面11aは平面状に形成されると共にパッケージ3の側壁部3bの上端部3dより上方に位置している。 In the cavity 2, on the first sealing resin 10 is the second resin member 11 made of a translucent resin is filled, the side wall portions of the package 3 with its upper surface 11a is formed in a planar shape It is positioned above the upper end portion 3d of 3b.

第1の封止樹脂10を構成するバインダー樹脂9と第2の樹脂部材11は異なる種類の樹脂でもよいし同一の種類の樹脂でもよいが、熱膨張率の違いによるバインダー樹脂9と第2の樹脂部材11との界面の剥離及び屈折率の違いによるバインダー樹脂9と第2の樹脂部材11との界面における光の全反射あるいは屈折を防止するために、同一種類の樹脂であることが好ましい。 The first binder resin 9 and the second resin member 11 of the sealing resin 10 may be a different type same type may be a resin of the resin, the binder resin 9 by the difference in coefficient of thermal expansion between the second in order to prevent total reflection or refraction of light at the interface of the binder resin 9 due to the difference in separation and refractive index of the interface and the second resin member 11 with the resin member 11, it is preferably the same type of resin.

その場合、バインダー樹脂9と第2の樹脂部材11はいずれもシリコーン樹脂またはエポキシ樹脂が好ましく、LED素子5の点灯時の発熱で近傍のバインダー樹脂9が熱膨張したときに、該LED素子5に対してその熱膨張による応力の影響が少ないシリコーン樹脂がより好ましい。 In that case, the binder resin 9 and the second resin member 11 are both silicone resin or epoxy resin is preferable, when the vicinity of the binder resin 9 in heat generated during lighting of the LED element 5 is thermally expanded, to the LED element 5 less silicone resins influence of stress due to thermal expansion for more preferable.

また、バインダー樹脂9と第2の樹脂部材11の屈折率を共にnとし、第2の樹脂部材11の上面11aの接する空気層12の屈折率を1とすると、第2の樹脂部材11から空気層12に入射する光線の臨界角τはτ=sin −1 (1/n)の関係となる。 Further, a binder resin 9 and both n the refractive index of the second resin member 11, and the refractive index of the air layer 12 in contact with the upper surface 11a of the second resin member 11 and 1, the air from the second resin member 11 critical angle of light rays incident on the layer 12 tau is the relationship τ = sin -1 (1 / n ).

そこで、LED素子5の主光出射面となる上面5aから第1の封止樹脂10の上面10aまでの距離をaとし、第2の樹脂部材11の厚みをbとし、LED素子5の上面5aの中心を通る光軸X上から第2の樹脂部材11の上面11aの外周11cまでの距離をcとすると、a、b、c及びτの関係がτ>tan −1 (c/(a+b))となるように設定されている。 Therefore, the distance from the upper surface 5a as a main light emitting surface of the LED element 5 to the upper surface 10a of the first sealing resin 10 is a, the thickness of the second resin member 11 is b, the upper surface 5a of the LED element 5 When the distance from the optical axis X passing through the center to the outer periphery 11c of the upper surface 11a of the second resin member 11, c, a, b, the relationship between c and τ τ> tan -1 (c / (a + b) ) and is set to be.

換言すると、LED素子5の上面5aの中心を通る光軸XとLED素子5の上面5aの中心を通り第2の樹脂部材11の上面11aの外周11cに交わる直線Cがなす角θが臨界角τよりも小さくなるように(θ<τ)aとbとcとの関係が設定されている。 In other words, the optical axis X and the critical angle line C is angle θ intersecting the outer circumference 11c of the upper surface 11a of passes through the center of the upper surface 5a of the LED element 5 and the second resin member 11 passing through the center of the upper surface 5a of the LED element 5 relationship is set between the smaller becomes as (θ <τ) a, b, and c than tau.

従って、上記a、b、c及びτの関係が満足されていれば第2の樹脂部材11の上面11aの形状は特に限定されるものではなく、例えば、矩形状でも円形状でもよい。 Accordingly, the a, b, the shape of the upper surface 11a of the second resin member 11 if the relationship of c and τ is satisfied is not limited in particular, for example, it may be a circular shape in a rectangular shape. 円形状の場合はLED素子5の光軸X上を中心とする半径cの円形となる。 For circular a circular radius c centered on the optical axis X of the LED element 5.

また、第1の封止樹脂10の上面10aと第2の樹脂部材11の下面11bは互いの形状寸法が同一で全面に亘って重なり合って界面を形成していることが好ましく、前記界面と第2の樹脂部材の上面11aとは同一形状であることが好ましい。 The lower surface 11b of the upper surface 10a and the second resin member 11 of the first sealing resin 10 is preferably to form an interface overlap each other geometry is over the entire surface in the same, the interface and the it is preferred that the upper surface 11a of the second resin member have the same shape.

つまり、第1の封止樹脂10及び第2の樹脂部材11が充填されるキャビティ2を形成する、パッケージ3の側壁部3bの内周面3cは筒状またはLED素子5の照射方向に向けてLED素子5の光軸Xに対して離れる方向に開いた連続傾斜面からなることが好ましい。 That is, the first sealing resin 10 and the second resin member 11 to form a cavity 2 to be filled, the inner peripheral surface 3c of the side wall portion 3b of the package 3 toward the irradiation direction of the tubular or LED element 5 it is preferably made of a continuous inclined surface opened in a direction away from the optical axis X of the LED element 5.

第1の封止樹脂10及び第2の樹脂部材11のキャビティ2内への充填はいずれもポッティングモールドによって行われ、第1の封止樹脂10を充填して常温硬化したパッケージ3上に、第2の樹脂部材11を充填して常温硬化するものである。 Filling of the cavity 2 of the first sealing resin 10 and the second resin member 11 are all made by potting molding, on a package 3 which is cold-cure by filling the first sealing resin 10, the it is to cold-cure by filling the second resin member 11. これにより、第2の樹脂部材11の上面11aを略平面とすることができ、その上面11aを吸着面とし、配線基板上への自動実装の対応が可能となり、生産効率の向上を図ることができる。 Thus, the upper surface 11a of the second resin member 11 can be made substantially flat, the upper surface 11a and the suction surface, it is possible to cope with automatic mounting of the wiring substrate, it is possible to improve the production efficiency it can.

上記構成からなる半導体発光装置30は配線基板13に対して、パッケージ3内から延長された導体パターン4a、4bと配線基板13に形成された回路パターン13a、13bをはんだ等の導電性接合部材14を介して固定及び電気的導通が図られ、これにより半導体発光モジュール1が形成される。 The semiconductor light emitting device 30 is a wiring board 13 having the above structure, the conductor patterns 4a extended from inside the package 3, 4b and the wiring substrate 13 formed circuit pattern 13a, such as solder and 13b conductive joining member 14 fixing and electrical conduction through is achieved, thereby the semiconductor light-emitting module 1 is formed.

そこで、このように構成された本実施例の半導体発光モジュール1において、LED素子5から第2の樹脂部材11の上面11aに向けて発せられた光線L1は、第1の封止樹脂10を構成する赤色蛍光体層7、緑色蛍光体層8、バインダー樹脂9及び第2の樹脂部材11を順次通過して第2の樹脂部材11の上面11aに到達する。 Therefore, in the semiconductor light emitting module 1 of the present embodiment having such a configuration, light beam L1 emitted toward the upper surface 11a of the LED element 5 and the second resin member 11, constituting the first sealing resin 10 red phosphor layer 7, and reaches the upper surface 11a of the green phosphor layer 8, the second resin member 11 and sequentially passes through the binder resin 9 and the second resin member 11.

第2の樹脂部材11の上面11aに到達した光線L1は該上面11aに対して臨界角τよりも小さい角度θ で入射する。 Light L1 that has reached the upper surface 11a of the second resin member 11 is incident at a small angle theta L than the critical angle τ with respect to the upper surface 11a. そのため、第2の樹脂部材11の上面11aに到達した光線Lのほとんどが該上面11aで全反射されることなくそのまま空気層12に出射される。 Therefore, it is directly emitted into the air layer 12 without most of light rays L that has reached the upper surface 11a of the second resin member 11 is totally reflected by the upper surface 11a.

また、LED素子5から第1の封止樹脂10を構成する赤色蛍光体層7、緑色蛍光体層8、バインダー樹脂9及び第2の樹脂部材11を順次通過して出射する光線L2は、一部が第2の樹脂部材11の側面で全反射し、同じく上面11aから出射する。 Also, light L2 emitted from the LED element 5 red phosphor layer 7 constituting the first sealing resin 10, a green phosphor layer 8, sequentially passes through the binder resin 9 and the second resin member 11 may include one parts are totally reflected by the side surface of the second resin member 11 is also emitted from the upper surface 11a.

そのため、LED素子5から発せられて第2の樹脂部材11の上面11aに向かう光はほとんど全てが赤色蛍光体層7及び緑色蛍光体層8の夫々を1回ずつしか励起せず、青色光の光量低下及び青色光で励起された緑色蛍光体層8が発する緑色光で赤色蛍光体層7が励起される二次励起もない。 Therefore, emitted from the LED element 5 of the second almost all light is directed toward the upper surface 11a of the resin member 11 is only excite once the respective red phosphor layer 7 and the green fluorescent layer 8, the blue light no secondary excitation of the red phosphor layer 7 is excited by the green light green phosphor layer 8 which is excited by the light amount decrease, and blue light emitted.

その結果、半導体発光モジュール1からの照射光は、部分的に色調の赤色側(暖色系側)へのシフト(スペクトル分布の長波長側へのシフト)を有することはなく、照射面に色調むらの少ない白色光を照射することが可能となる。 As a result, light emitted from the semiconductor light-emitting module 1 is partially not have a red side tone (shift to the long wavelength side of the spectral distribution) shift to (warm side), the color tone uneven irradiation surface it is possible to irradiate a little white light.

図2は本発明の半導体発光装置に係る実施例2の説明図である。 Figure 2 is an illustration of a second embodiment of the semiconductor light-emitting device of the present invention.

本実施例の半導体発光装置30は上記実施例1に対して、LED素子から発せられて到達した光線のほとんどが全反射されることなくそのまま空気層に出射される、第2の樹脂部材の上面の面積を実施例1よりも大きくしたことが異なる。 The semiconductor light emitting device 30 of this embodiment with respect to the first embodiment, most of the light rays arrive emitted from the LED elements is emitted as it is an air layer without being totally reflected on the top surface of the second resin member different to the area to be greater than in example 1.

これにより、半導体発光装置30は実施例1と同様に照射面に色調むらの少ない白色光を照射することが可能であると共に、LED素子で発せられた光の照射領域が実施例1よりも拡大して光の利用効率の向上が図られたものである。 Expanding Thus, the semiconductor light emitting device 30 can be irradiated with a small white light color unevenness on the irradiation surface in the same manner as in Example 1, the irradiation region of light emitted by the LED elements than Example 1 in which the improvement of the utilization efficiency of light is reduced by.

具体的には、第1の封止樹脂10の上面10aが平面状に形成されると共にパッケージ3の側壁部3bの上端部3dと略面一となっており、その第1の封止樹脂10の上に位置する第2の樹脂部材11の上面11aが、光軸Xと交わる面を平面とする平面部11dと該平面部11dの外周11eからLED素子5の照射方向と反対方向に向けてLED素子5の光軸Xに対して離れる方向に開いた傾斜面部11fからなっている。 Specifically, the upper surface 10a of the first sealing resin 10 has become the sidewall portion 3b upper part 3d substantially flush of the package 3 and is formed in a flat shape, a first sealing resin 10 upper surface 11a of the second resin member 11 positioned above the can, with its plane intersecting the optical axis X from the outer periphery 11e of the flat portion 11d and the flat surface portion 11d of the plane in a direction opposite to the irradiation direction of the LED element 5 It consists inclined surface portion 11f open in a direction away from the optical axis X of the LED element 5.

そのうち、平面部11dは、実施例1と同様に第1の封止樹脂10を構成するバインダー樹脂9と第1の封止樹脂10の上に位置する第2の樹脂部材11の屈折率を共にnとし、第2の樹脂部材11の上面11aの接する空気層12の屈折率を1とし、LED素子5の主光出射面となる上面5aから第1の封止樹脂10の上面10aまでの距離をaとし、第2の樹脂部材11の下面11bから平面部11dまでの距離をbとし、LED素子5の主光出射面となる上面5aの中心を通る光軸X上から第2の樹脂部材11の平面部11dの外周11eまでの距離をcとすると、a、b、c及びτの関係がτ>tan −1 (c/(a+b))となるように設定されている。 Among them, the planar portion 11d is the refractive index of the second resin member 11 positioned between the binder resin 9 constituting the first sealing resin 10 in the same manner as in Example 1 on the first sealing resin 10 both and n, the refractive index of the air layer 12 in contact with the upper surface 11a of the second resin member 11 as a 1, distance from the upper surface 5a as a main light emitting surface of the LED element 5 to the upper surface 10a of the first sealing resin 10 the is a, the distance from the lower surface 11b of the second resin member 11 to the flat portion 11d and is b, the second resin member from the optical axis X passing through the center of the upper surface 5a as a main light emitting surface of the LED element 5 When the distance to the outer periphery 11e of the flat portion 11d of 11 to c, a, b, the relationship of c and tau are set such that τ> tan -1 (c / ( a + b)).

換言すると、LED素子5の上面5aの中心を通る光軸XとLED素子5の上面5aの中心を通り第2の樹脂部材11の平面部11dの外周11eに交わる直線Cがなす角θ1が臨界角τよりも小さくなるように(θ1<τ)aとbとcとの関係が設定されている。 In other words, the optical axis X and the straight line C is angle θ1 intersecting the outer circumference 11e of the flat portion 11d of the passes through the center of the upper surface 5a of the LED element 5 and the second resin member 11 passing through the center of the upper surface 5a of the LED element 5 is critical as it is smaller than the angular τ (θ1 <τ) relationship between a and b and c are set.

従って、上記a、b、c及びτの関係が満足されていれば第2の樹脂部材11の平面部11dの形状は特に限定されるものではなく、例えば、矩形状でも円形状でもよい。 Accordingly, the a, b, the shape of the flat portion 11d of the second resin member 11 if the relationship of c and τ is satisfied is not limited in particular, for example, it may be a circular shape in a rectangular shape. 円形状の場合はLED素子5の光軸X上を中心とする半径cの円形となる。 For circular a circular radius c centered on the optical axis X of the LED element 5.

一方、傾斜面部11fは、上端を平面部11dの外周11eとし、下端をパッケージ3の側壁部3bの上端部3dとする連続傾斜面であり、LED素子5の上面5aの中心を通り傾斜面部11fと交わる直線Dがその傾斜面部11fの交点における法線N1となす角θ2が臨界角τよりも小さくなるように(θ2<τ)設定されている。 On the other hand, the inclined surface portion 11f is the upper end and the outer peripheral 11e of the flat portion 11d, a continuous inclined surface whose upper end portion 3d of the side wall portion 3b of the lower package 3, through the center of the upper surface 5a of the LED element 5 inclined surface portion 11f angle .theta.2 formed with the normal line N1 is made as (θ2 <τ) smaller than the critical angle tau at the intersection straight line D is the inclined surface 11f intersects with.

第1の封止樹脂10のキャビティ2内への充填はポッティングモールドによって行われ、第1の封止樹脂10を充填して常温硬化したパッケージ3上に金型により第2の樹脂部材11を形成してもよいし、予め所定の形状に形成した第2の樹脂部材11を同一の材料を介して第1の封止樹脂10上に貼着することも可能である。 Filling of the cavity 2 of the first sealing resin 10 is performed by potting molding, forming a second resin member 11 by a die on a package 3 which is cold-cure by filling the first sealing resin 10 may be, it is also possible to adhere the second resin member 11 formed in advance a predetermined shape on the first sealing resin 10 through the same material.

そこで、このように構成された本実施例の半導体発光装置30において、LED素子5から第2の樹脂部材11の平面部11dに向けて発せられた光線L1は、第1の封止樹脂10を構成する赤色蛍光体層7、緑色蛍光体層8、バインダー樹脂9及び第2の樹脂部材11を順次通過して第2の樹脂部材11の平面部11dに到達する。 Therefore, in the semiconductor light-emitting device 30 of the present embodiment having such a configuration, light beam L1 emitted toward the planar portion 11d from the LED element 5 and the second resin member 11, the first sealing resin 10 red phosphor layer 7 constituting, reaches the flat surface portion 11d of the green phosphor layer 8, the second resin member 11 and sequentially passes through the binder resin 9 and the second resin member 11.

第2の樹脂部材11の平面部11dに到達した光線L1は該平面部11dに対して臨界角τよりも小さい角度θ L1で入射する。 Light L1 having reached the flat portion 11d of the second resin member 11 is incident at a small angle theta L1 than the critical angle τ with respect to the flat surface portion 11d. そのため、第2の樹脂部材11の平面部11dに到達した光線L1のほとんどが該平面部11dで全反射されることなくそのまま空気層12に出射される。 Therefore, it is directly emitted into the air layer 12 without most of light rays L1 having reached the flat portion 11d of the second resin member 11 is totally reflected by the flat portion 11d.

そのため、LED素子5から発せられて第2の樹脂部材11の平面部11dに向かう光はほとんど全てが赤色蛍光体層7及び緑色蛍光体層8の夫々を1回ずつしか励起せず、青色光の光量低下及び青色光で励起された緑色蛍光体層8が発する緑色光で赤色蛍光体層7が励起される二次励起もない。 Therefore, not only the excitation light toward the flat surface portion 11d of the second resin member 11 is emitted from the LED element 5 is almost all once the respective red phosphor layer 7 and the green fluorescent layer 8, the blue light no secondary excitation of the red phosphor layer 7 is excited by the green light green phosphor layer 8 which is excited by the light amount reduction and blue light emitted.

一方、LED素子5から第2の樹脂部材11の傾斜面部11fに向けて発せられた光線L2は、第1の封止樹脂10を構成する赤色蛍光体層7、緑色蛍光体層8、バインダー樹脂9及び第2の樹脂部材11を順次通過して第2の部材樹脂11の傾斜面部11fに到達する。 On the other hand, light L2 emitted towards the inclined surface portion 11f of the LED element 5 and the second resin member 11, the red phosphor layer 7 constituting the first sealing resin 10, a green phosphor layer 8, a binder resin sequentially passes through 9 and the second resin member 11 reaches the inclined surface portion 11f of the second member resin 11.

第2の樹脂部材11の傾斜面部11fに到達した光線L2は該傾斜面部11fの法線N2に対して臨界角τよりも小さい角度θ L2で入射する。 Light L2 having reached the inclined surface portion 11f of the second resin member 11 is incident at a small angle theta L2 than the critical angle τ with respect to the normal N2 of the inclined surface portion 11f. そのため、第2の樹脂部材11の傾斜面部11fに到達した光線L2のほとんどが該傾斜面部11fで全反射されることなくそのまま空気層12に出射される。 Therefore, it emitted directly into the air layer 12 without most of light L2 which has reached the inclined surface portion 11f of the second resin member 11 is totally reflected by the inclined surface portion 11f.

そのため、LED素子5から発せられて第2の樹脂部材11の傾斜面部11fに向かう光はほとんど全てが赤色蛍光体層7及び緑色蛍光体層8の夫々を1回ずつしか励起せず、青色光の光量低下及び青色光で励起された緑色蛍光体層8が発する緑色光で赤色蛍光体層7が励起される二次励起もない。 Therefore, not only the excitation light toward the inclined surface portion 11f of the second resin member 11 is emitted from the LED element 5 is almost all once the respective red phosphor layer 7 and the green fluorescent layer 8, the blue light no secondary excitation of the red phosphor layer 7 is excited by the green light green phosphor layer 8 which is excited by the light amount reduction and blue light emitted.

その結果、半導体発光装置30の第2の樹脂部材11の、平面部11dと傾斜面部11fで構成された上面11aからの照射光は、部分的に色調の赤色側(暖色系側)へのシフト(スペクトル分布の長波長側へのシフト)を有することはなく、照射面に色調むらの少ない白色光を広範囲に亘って照射することが可能となる。 Shifting the result of the second resin member 11 of the semiconductor light emitting device 30, light emitted from the upper surface 11a constituted by a flat portion 11d inclined surface portion 11f is partially color tone of the red side (warm side) not to have a (shift to the long wavelength side of the spectral distribution), it can be irradiated over a wide range with less white light color unevenness on the irradiation surface.

なお、キャビティ2内へポッティングモールドによって第1の封止樹脂10を充填して常温硬化したパッケージ3を配線基板13上に実装した後、第1の封止樹脂10上に液体定量吐出機により一定量の第2の樹脂部材11を滴下して常温硬化することも可能である。 Note that after mounting the package 3 which is cold-cure by filling the first sealing resin 10 by potting mold into the cavity 2 on the wiring board 13, a constant by the liquid dispensing apparatus on the first sealing resin 10 it is also possible to cold-cure dropwise second resin member 11 amounts.

この場合、図3のように、第2の樹脂部材11の上面部11gは実施例2の第2の樹脂部材11の平面部11dに対応する面であるが実施例2よりも多少上方に凸状に湾曲した形状に形成される。 In this case, as shown in FIG. 3, the upper surface portion 11g is slightly convex upward than is a second embodiment which is a surface corresponding to the planar portion 11d of the second resin member 11 of Example 2 of the second resin member 11 It is formed in a curved shape to Jo. 但し、この湾曲面からなる上面部11gは実施例2の平面からなる平面部11dよりも同一方向から到達した光線が全反射され難く、この第2の樹脂部材11の上面部11gにおける光学性能は実施例2の第2の樹脂部材11の平面部11dに劣らない。 However, the upper surface portion 11g formed of the curved surface is light arriving from the same direction than the planar portion 11d made of the plane of Example 2 is hardly total reflection, the optical performance of the upper surface portion 11g of the second resin member 11 not inferior to the planar portion 11d of the second resin member 11 of example 2.

また、第2の樹脂部材11の湾屈部11hは実施例2の第2の樹脂部材11の平面部11dの外周11eに対応する部分であるが、実施例2よりも多少Rのついた形状に形成される。 Shape Although bay 屈部 11h of the second resin member 11 is a portion corresponding to the outer circumference 11e of the flat portion 11d of the second resin member 11 of Example 2, equipped with a slightly R than Example 2 It is formed on. 但し、このRのついた部分の領域は平面部11dの外周11e近傍よりも同一方向から到達した光線が全反射され難く、この第2の樹脂部材11の湾屈部11hにおける光学性能は実施例2の第2の樹脂部材11の平面部11dの外周11e近傍に劣らない。 However, this region of the attached portion of the R light rays arriving from the same direction than the outer peripheral 11e near the flat portion 11d is hardly total reflection, the optical performance in the bay 屈部 11h of the second resin member 11 Example not inferior to the outer circumference 11e near the flat portion 11d of the second resin member 11 in 2.

更に、第2の樹脂部材11の傾斜部11iは実施例2の第2の樹脂部材11の傾斜面部11fに対応する面であるが、この場合も実施例2よりも多少上方に凸状に湾曲した形状に形成されており、この湾曲面からなる傾斜部11iは実施例2の平面からなる傾斜面部11fよりも同一方向から到達した光線が全反射され難く、この第2の樹脂部材11の傾斜部11iにおける光学性能は実施例2の第2の樹脂部材11の傾斜面部11fに劣らない。 Moreover, although the inclined portion 11i of the second resin member 11 is a corresponding surface on the inclined surface portion 11f of the second resin member 11 of Example 2, curved slightly above the also Example 2 In this case the convex was formed into a shape, the inclined portion 11i made of curved surface light arriving from the same direction than the inclined surface portion 11f formed of the plane of example 2 is hardly total reflection, the slope of the second resin member 11 optical performance in parts 11i are not inferior to the inclined surface portion 11f of the second resin member 11 of example 2.

図4、図5は本発明の半導体発光装置に係る実施例3の説明図である。 4, FIG. 5 is an explanatory view of a third embodiment of the semiconductor light-emitting device of the present invention.

本実施例の半導体発光装置30は、実施例1の半導体発光装置30を基本構成とし、配線基板13上に実装され、キャビティ2内に第1の封止樹脂10及び第2の樹脂部材11が充填されてLED素子5が樹脂封止されてなる半導体発光装置30全体を、樹脂レンズ21で覆った構成となっている。 The semiconductor light emitting device 30 of this embodiment, the semiconductor light-emitting device 30 of Example 1 as a basic configuration, is mounted on the wiring substrate 13, the first sealing resin 10 and the second resin member 11 into the cavity 2 LED element 5 is filled with the entire semiconductor light-emitting device 30 in which a resin-sealed, has a configuration which is covered with a resin lens 21.

そこで図4のように、第1の封止樹脂10を構成するバインダー樹脂9と第1の封止樹脂10の上に位置する第2の樹脂部材11の屈折率を共にn1とし、第2の樹脂部材11の上面11aに接する樹脂レンズ21の屈折率をn2としたとき、屈折率n2が屈折率n1以上(n1≦n2)の場合は、LED素子5の主光出射面となる上面5aから第1の封止樹脂10の上面10aまでの距離をaとし、第2の樹脂部材11の厚みをbとし、LED素子5の主光出射面となる上面5aの中心を通る光軸X上から第2の樹脂部材11の上面11aの外周11cまでの距離をcとすると、第2の樹脂部材11側から該第2の樹脂部材11の上面11aに到達した光線Lには全反射はなく全て樹脂レンズ21内に入射する。 Therefore, as in FIG. 4, a binder resin 9 constituting the first sealing resin 10 is n1 both the refractive index of the second resin member 11 located above the first sealing resin 10, the second when the refractive index of the resin lens 21 in contact with the upper surface 11a of the resin member 11 was set to n2, if the refractive index n2 is the refractive index n1 higher (n1 ≦ n2), from the upper surface 5a as a main light emitting surface of the LED element 5 the distance to the upper surface 10a of the first sealing resin 10 is a, the thickness of the second resin member 11 is b, the optical axis X passing through the center of the upper surface 5a as a main light emitting surface of the LED element 5 When the distance to the outer periphery 11c of the upper surface 11a of the second resin member 11 is c, the light beam L that has reached the second resin member 11 side to the upper surface 11a of the second resin member 11 totally reflecting all not It enters the resin lens 21. そのため、a、b及びcの間には制約がなく夫々自由に設定することができる(図ではn1<n2のときの状態を示している)。 Therefore, a, between b and c may be constrained to set each freely without (in the figure shows a state when n1 <n2).

一方、屈折率n2が屈折率n1よりも小さい場合は、図5のように、第2の樹脂部材11から樹脂レンズ21に入射する光線の臨界角τ=sin −1 (n2/n1)となる。 On the other hand, the refractive index n2 is smaller than the refractive index n1, as shown in FIG. 5, the second resin member 11 of the light rays incident on the plastic lens 21 the critical angle τ = sin -1 (n2 / n1 ) . そこで、a、b、c及びτの関係がτ>tan −1 (c/(a+b))となるように設定されている。 Therefore, a, b, the relationship of c and tau are set such that τ> tan -1 (c / ( a + b)).

換言すると、LED素子5の上面5aの中心を通る光軸XとLED素子5の上面5aの中心を通り第2の樹脂部材11の上面11aの外周11cに交わる直線Cがなす角θが臨界角τよりも小さくなるように(θ<τ)aとbとcとの関係が設定されている。 In other words, the optical axis X and the critical angle line C is angle θ intersecting the outer circumference 11c of the upper surface 11a of passes through the center of the upper surface 5a of the LED element 5 and the second resin member 11 passing through the center of the upper surface 5a of the LED element 5 relationship is set between the smaller becomes as (θ <τ) a, b, and c than tau.

そこで、このように構成された本実施例の半導体発光モジュール20において、LED素子5から第2の樹脂部材11の上面11aに向けて発せられた光線Lは、第1の封止樹脂10を構成する赤色蛍光体層7、緑色蛍光体層8、バインダー樹脂9及び第2の樹脂部材11を順次通過して第2の樹脂部材11の上面11aに到達する。 Therefore, in the semiconductor light emitting module 20 of the present embodiment having such a configuration, light beams L emitted toward the upper surface 11a of the LED element 5 and the second resin member 11, constituting the first sealing resin 10 red phosphor layer 7, and reaches the upper surface 11a of the green phosphor layer 8, the second resin member 11 and sequentially passes through the binder resin 9 and the second resin member 11.

第2の樹脂部材11の上面11aに到達した光線Lは該上面11aに対して臨界角τよりも小さい角度θ で入射する。 Light L that has reached the upper surface 11a of the second resin member 11 is incident at a small angle theta L than the critical angle τ with respect to the upper surface 11a. そのため、第2の樹脂部材11の上面11aに到達した光線Lのほとんどが該上面11aで全反射されることなくそのまま樹脂レンズ21に入射する。 Therefore, most of the light L that has reached the upper surface 11a of the second resin member 11 is incident on it resin lens 21 without being totally reflected by the upper surface 11a.

樹脂レンズ21内に入射した光線Lは樹脂レンズ21内を導光されて光出射面21aに到達する。 Light L incident on the plastic lens 21 is guided to the resin lens 21 and reaches the light exit surface 21a. 光出射面21aは発光源となるLED素子5を覆うように略球面状に形成されており、光出射面21aに到達した光線Lはほとんど反射されることなくそのまま外部の空気層12に出射される。 Light emitting surface 21a is formed substantially spherical shape so as to cover the LED element 5 serving as a light emitting source, light L that has reached the light exit surface 21a is directly emitted to the outside of the air layer 12 without being hardly reflected that.

そのため、LED素子5から発せられて第2の樹脂部材11の上面11aに向かう光はほとんど全てが赤色蛍光体層7及び緑色蛍光体層8の夫々を1回ずつしか励起せず、青色光の光量低下及び青色光で励起された緑色蛍光体層8が発する緑色光で赤色蛍光体層7が励起される二次励起もない。 Therefore, emitted from the LED element 5 of the second almost all light is directed toward the upper surface 11a of the resin member 11 is only excite once the respective red phosphor layer 7 and the green fluorescent layer 8, the blue light no secondary excitation of the red phosphor layer 7 is excited by the green light green phosphor layer 8 which is excited by the light amount decrease, and blue light emitted.

その結果、半導体発光モジュール20の樹脂レンズ21を介して出射される照射光は、部分的に色調の赤色側(暖色系側)へのシフト(スペクトル分布の長波長側へのシフト)を有することはなく、照射面に色調むらの少ない白色光を照射することが可能となる。 As a result, illumination light emitted through the resin lens 21 of the semiconductor light-emitting module 20 is partly to have a red side tone (shift to the long wavelength side of the spectral distribution) shift to (warm side) rather, it is possible to irradiate a small color unevenness white light irradiated surface.

なお、上記実施形態は、青色LED素子を発光源とし、赤色蛍光体及び緑色蛍光体の2種類の混合蛍光体を用いることにより白色光を得るものであったが、「背景技術」でも述べたように、発光源を紫外LED素子とし、青色蛍光体、緑色蛍光体及び赤色蛍光体の3種類の蛍光体からなる混合蛍光体を用いることにより白色光を得ることもできる。 The above-described embodiment, a blue LED element as a light emitting source, but was to obtain a white light by using two types of mixed phosphors of red and green phosphors, mentioned in "Background Art" as such, the light emission source and an ultraviolet LED element, it is also possible to obtain white light by using a blue phosphor, a green phosphor and a red phosphor mixed phosphor composed of three types of phosphors.

その場合、キャビティ内に堆積させる各蛍光体層は、二次励起及び二次励起された蛍光体による三次励起を防止するために発光源側から順に発光波長(蛍光波長)が長い蛍光体層を堆積させるものであり、具体的には、発光源側から赤色蛍光体層、緑色蛍光体層及び青色蛍光体層の順に積層する。 In that case, the phosphor layer to be deposited in the cavity, a phosphor layer emission wavelength from the light source side in this order (fluorescence wavelength) is longer in order to prevent the tertiary excitation by secondary excitation and secondary excited phosphor It is intended to be deposited, specifically, stacked from the light source side a red phosphor layer, in the order of the green phosphor layer and the blue phosphor layer.

さらに、発光源を青色LED素子とし、黄色蛍光体を用いることにより白色色を得るものにも当然適用でき、この場合も封止樹脂の上面で全反射し、蛍光体を再度励起する二次励起を防止するため、色むらを少ないものとすることができる。 Further, the light emitting source is a blue LED element, also naturally applicable to obtain a white color by using a yellow phosphor, again totally reflected by the top surface of the sealing resin, the secondary excitation to excite the phosphor again to prevent, it can be made small color unevenness.

1 半導体発光モジュール 2 キャビティ 3 パッケージ 3a 底部 3b 側壁部 3c 内周面 3d 上端部 4a、4b 導体パターン 5 青色LED素子 5a 上面 6 ボンディングワイヤ 7 赤色蛍光体層 7a 赤色蛍光体 8 緑色蛍光体層 8a 緑色蛍光体 9 バインダー樹脂 10 第1の封止樹脂 10a 上面 11 第2の樹脂部材 11a 上面 11b 下面 11c 外周 11d 平面部 11e 外周 11f 傾斜面部 11g 上面部 11h 湾屈部 11i 傾斜部 12 空気層 13 配線基板 13a、13b 回路パターン 14 導電性接合部材 20 半導体発光モジュール 21 樹脂レンズ 21a 光出射面 30 半導体発光装置 1 semiconductor light-emitting module 2 cavity 3 package 3a bottom 3b side wall portion 3c in the peripheral surface 3d upper portion 4a, 4b conductor pattern 5 blue LED element 5a top 6 bonding wire 7 red phosphor layer 7a red phosphor 8 green phosphor layer 8a green phosphor 9 binder resin 10 first sealing resin 10a upper surface 11 and the second resin member 11a upper face 11b bottom surface 11c periphery 11d flat section 11e periphery 11f inclined surface 11g upper surface portion 11h Bay 屈部 11i inclined portion 12 an air layer 13 wiring board 13a, 13b the circuit pattern 14 conductive joining member 20 semiconductor light-emitting module 21 resin lens 21a light-emitting surface 30 a semiconductor light emitting device

Claims (5)

  1. 凹状のキャビティを有するパッケージと、 And a package having a concave cavity,
    前記キャビティの底面上に実装された半導体発光素子と、 A semiconductor light emitting element mounted on the bottom surface of the cavity,
    前記半導体発光素子を覆うように前記キャビティの底面側に位置する一種または複数種の蛍光体層と、 And one or more of the phosphor layer located on the bottom side of the cavity so as to cover the semiconductor light emitting element,
    前記蛍光体層の上に位置し、前記蛍光体層を構成する蛍光体とで第1の封止樹脂を形成するバインダー樹脂と、 A binder resin, wherein located on the phosphor layer to form a first sealing resin in the phosphor constituting the phosphor layer,
    前記バインダー樹脂の上に配置された第2の樹脂部材とを備え、 And a second resin member which is disposed on the binder resin,
    前記第2の樹脂部材の上面は、前記半導体発光素子の上面の中心を通り該第2の樹脂部材の上面と交差する直線と、前記第2の樹脂部材の上面の前記直線との交点における法線とのなす角が、前記半導体発光素子の上面の中心からの入射光線に対する臨界角よりも小さくなるように設定されていることを特徴とする半導体発光装置。 The top surface of the second resin member, Law at the intersection of the straight line that intersects the upper surface of the semiconductor top surface around the street the second resin member of the light emitting element, and the straight line of the upper surface of the second resin member angle between lines, the semiconductor light emitting device characterized by being set to be smaller than the critical angle for incident light from the center of the upper surface of the semiconductor light emitting element.
  2. 前記第2の樹脂部材の上面は、平面形状、錐台形状及び三次元曲面形状の形状のうちいずれか1つであることを特徴とする請求項1に記載の半導体発光装置。 The top surface of the second resin member, a semiconductor light emitting device according to claim 1, wherein the planar shape is any one shape of a frustum shape and three-dimensional curved surface shape.
  3. 前記第2樹脂部材の厚みにより、前記第2の樹脂部材の上面は、前記半導体発光素子の上面の中心を通り該第2の樹脂部材の上面と交差する直線と、前記第2の樹脂部材の上面の前記直線との交点における法線とのなす角が、前記半導体発光素子の上面の中心からの入射光線に対する臨界角よりも小さくなるように設定されていることを特徴とする請求項1または2のいずれか1項に記載の半導体発光装置。 The thickness of the second resin member, the upper surface of the second resin member, and a straight line which intersects with the upper surface of the semiconductor top surface around the street the second resin member of the light emitting element, the second resin member the angle between the normal line at the intersection with the straight line of the upper surface, the claim 1, characterized in that it is set to be smaller than the critical angle for incident light from the center of the upper surface of the semiconductor light-emitting element or the semiconductor light emitting device according to any one of 2.
  4. 前記半導体発光素子は青色LED素子であり、且つ前記蛍光体層は前記キャビティの底面側から順に赤色蛍光体層、緑色蛍光体層であることを特徴とする請求項1から3のいずれか1項に記載の半導体発光装置。 The semiconductor light emitting device is a blue LED element, and the phosphor layer is a red phosphor layer in this order from the bottom side of the cavity, any one of claims 1 to 3, characterized in that it is a green phosphor layer the semiconductor light emitting device according to.
  5. 前記半導体発光素子は紫外LED素子であり、且つ前記蛍光体層は前記キャビティの底面側から順に赤色蛍光体層、緑色蛍光体層、青色蛍光体層であることを特徴とする請求項1から3のいずれか1項に記載の半導体発光装置。 The semiconductor light emitting element is an ultraviolet LED element, and the phosphor layer is a red phosphor layer in this order from the bottom side of the cavity, a green phosphor layer, claims 1 to 3, characterized in that a blue phosphor layer the semiconductor light emitting device according to any one of.
JP2009023898A 2009-02-04 2009-02-04 Semiconductor light-emitting apparatus Pending JP2010182809A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009023898A JP2010182809A (en) 2009-02-04 2009-02-04 Semiconductor light-emitting apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2009023898A JP2010182809A (en) 2009-02-04 2009-02-04 Semiconductor light-emitting apparatus
CN201010112923.8A CN101800281B (en) 2009-02-04 2010-02-04 Semiconductor light emitting device

Publications (1)

Publication Number Publication Date
JP2010182809A true JP2010182809A (en) 2010-08-19

Family

ID=42595854

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009023898A Pending JP2010182809A (en) 2009-02-04 2009-02-04 Semiconductor light-emitting apparatus

Country Status (2)

Country Link
JP (1) JP2010182809A (en)
CN (1) CN101800281B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013004734A (en) * 2011-06-16 2013-01-07 Asahi Glass Co Ltd Light-emitting device
WO2015015719A1 (en) * 2013-07-30 2015-02-05 株式会社デンソー Display apparatus
JP2015050468A (en) * 2013-09-04 2015-03-16 エルジー イノテック カンパニー リミテッド Light emitting element package
WO2018004018A1 (en) * 2016-06-27 2018-01-04 (주)라이타이저코리아 Light-emitting device package

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9449772B2 (en) 2012-10-30 2016-09-20 Apple Inc. Low-travel key mechanisms using butterfly hinges
US9502193B2 (en) 2012-10-30 2016-11-22 Apple Inc. Low-travel key mechanisms using butterfly hinges
US9710069B2 (en) 2012-10-30 2017-07-18 Apple Inc. Flexible printed circuit having flex tails upon which keyboard keycaps are coupled
WO2014124165A2 (en) 2013-02-06 2014-08-14 Hemmonst Holding Llc Input/output device with a dynamically adjustable appearance and function
JP5983667B2 (en) * 2013-04-11 2016-09-06 株式会社デンソー The display device for a vehicle
CN106252489A (en) * 2013-05-13 2016-12-21 新世纪光电股份有限公司 Light emitting diode encapsulation structure
JP6103543B2 (en) 2013-05-27 2017-03-29 アップル インコーポレイテッド Short-stroke switch assembly
US9908310B2 (en) 2013-07-10 2018-03-06 Apple Inc. Electronic device with a reduced friction surface
WO2015047606A1 (en) 2013-09-30 2015-04-02 Apple Inc. Keycaps having reduced thickness
EP3014396A1 (en) 2013-09-30 2016-05-04 Apple Inc. Keycaps with reduced thickness
US9793066B1 (en) 2014-01-31 2017-10-17 Apple Inc. Keyboard hinge mechanism
US9779889B2 (en) 2014-03-24 2017-10-03 Apple Inc. Scissor mechanism features for a keyboard
US9704665B2 (en) 2014-05-19 2017-07-11 Apple Inc. Backlit keyboard including reflective component
US9715978B2 (en) 2014-05-27 2017-07-25 Apple Inc. Low travel switch assembly
US10082880B1 (en) 2014-08-28 2018-09-25 Apple Inc. System level features of a keyboard
US9870880B2 (en) 2014-09-30 2018-01-16 Apple Inc. Dome switch and switch housing for keyboard assembly
WO2016183498A1 (en) 2015-05-13 2016-11-17 Apple Inc. Low-travel key mechanism for an input device
CN205609396U (en) 2015-05-13 2016-09-28 苹果公司 Key and input structure who is used for electron device
US10083805B2 (en) 2015-05-13 2018-09-25 Apple Inc. Keyboard for electronic device
CN207367843U (en) 2015-05-13 2018-05-15 苹果公司 A keyboard assembly
US9934915B2 (en) 2015-06-10 2018-04-03 Apple Inc. Reduced layer keyboard stack-up
US9971084B2 (en) 2015-09-28 2018-05-15 Apple Inc. Illumination structure for uniform illumination of keys
US10353485B1 (en) 2016-07-27 2019-07-16 Apple Inc. Multifunction input device with an embedded capacitive sensing layer
US10115544B2 (en) 2016-08-08 2018-10-30 Apple Inc. Singulated keyboard assemblies and methods for assembling a keyboard

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077425A (en) * 1999-08-31 2001-03-23 Yoshinobu Suehiro Light-emitting element
JP2001119067A (en) * 1999-10-19 2001-04-27 Sanken Electric Co Ltd Semiconductor light emitting device
JP2005197423A (en) * 2004-01-07 2005-07-21 Matsushita Electric Ind Co Ltd Led light source
JP2005277127A (en) * 2004-03-25 2005-10-06 Stanley Electric Co Ltd Light-emitting device
JP2006196320A (en) * 2005-01-14 2006-07-27 Matsushita Electric Works Ltd Light source device and lighting device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005243973A (en) * 2004-02-26 2005-09-08 Kyocera Corp Light-emitting device and luminaire
JP2007116124A (en) * 2005-09-20 2007-05-10 Matsushita Electric Works Ltd Light emitting device
JP2007324475A (en) * 2006-06-02 2007-12-13 Sharp Corp Wavelength conversion member and light emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001077425A (en) * 1999-08-31 2001-03-23 Yoshinobu Suehiro Light-emitting element
JP2001119067A (en) * 1999-10-19 2001-04-27 Sanken Electric Co Ltd Semiconductor light emitting device
JP2005197423A (en) * 2004-01-07 2005-07-21 Matsushita Electric Ind Co Ltd Led light source
JP2005277127A (en) * 2004-03-25 2005-10-06 Stanley Electric Co Ltd Light-emitting device
JP2006196320A (en) * 2005-01-14 2006-07-27 Matsushita Electric Works Ltd Light source device and lighting device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013004734A (en) * 2011-06-16 2013-01-07 Asahi Glass Co Ltd Light-emitting device
WO2015015719A1 (en) * 2013-07-30 2015-02-05 株式会社デンソー Display apparatus
JP2015028435A (en) * 2013-07-30 2015-02-12 株式会社デンソー Display unit
US9776561B2 (en) 2013-07-30 2017-10-03 Denso Corporation Display apparatus
JP2015050468A (en) * 2013-09-04 2015-03-16 エルジー イノテック カンパニー リミテッド Light emitting element package
WO2018004018A1 (en) * 2016-06-27 2018-01-04 (주)라이타이저코리아 Light-emitting device package

Also Published As

Publication number Publication date
CN101800281A (en) 2010-08-11
CN101800281B (en) 2014-09-17

Similar Documents

Publication Publication Date Title
KR100616053B1 (en) Light emitting diode
US8921877B2 (en) Semiconductor light-emitting device for producing wavelength-converted light and method for manufacturing the same
US7722211B2 (en) Light engine
KR101389719B1 (en) Semiconductor light-emitting device
US7084435B2 (en) Light emitting device using LED
KR100874556B1 (en) The LED spotlight with a funnel shape of the lens
US8253149B2 (en) Light emitting diode device
KR100853240B1 (en) Light-emitting diode
US7828453B2 (en) Light emitting device and lamp-cover structure containing luminescent material
US20110085352A1 (en) Light emitting device, surface light source, liquid crystal display device, and method for manufacturing light emitting device
US8344400B2 (en) Light emitting device package
CN100381905C (en) Light emitting diode array module for providing backlight and backlight unit having the same
US8876311B2 (en) Light emitting device and illumination apparatus including same
US8039862B2 (en) White light emitting diode package having enhanced white lighting efficiency and method of making the same
KR101064036B1 (en) Light emitting device package and lighting system
KR100710102B1 (en) Light emitting apparatus
US8581287B2 (en) Semiconductor light emitting device having a reflective material, wavelength converting layer and optical plate with rough and plane surface regions, and method of manufacturing
JP4172196B2 (en) Light emitting diode
JP5326837B2 (en) The light-emitting device
JP5224173B2 (en) Semiconductor light-emitting device
US9368697B2 (en) Light emitting device package
US8569944B2 (en) Light emitting device
CN100440555C (en) Light-emitting device and method for manufacturing same
JP4366161B2 (en) Semiconductor light-emitting device
JP4909450B2 (en) Emitting device, a backlight unit, a liquid crystal display device and a lighting device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20120116

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20121121

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20130409

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20130730