WO2018004018A1 - Light-emitting device package - Google Patents

Light-emitting device package Download PDF

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Publication number
WO2018004018A1
WO2018004018A1 PCT/KR2016/006836 KR2016006836W WO2018004018A1 WO 2018004018 A1 WO2018004018 A1 WO 2018004018A1 KR 2016006836 W KR2016006836 W KR 2016006836W WO 2018004018 A1 WO2018004018 A1 WO 2018004018A1
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WIPO (PCT)
Prior art keywords
phosphor layer
phosphor
light emitting
thickness
emitting diode
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PCT/KR2016/006836
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French (fr)
Korean (ko)
Inventor
민재식
이재엽
장재영
조병철
조병구
조병권
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(주)라이타이저코리아
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Priority to KR1020167033420A priority Critical patent/KR20180125639A/en
Priority to PCT/KR2016/006836 priority patent/WO2018004018A1/en
Publication of WO2018004018A1 publication Critical patent/WO2018004018A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H01L33/504—Elements with two or more wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED

Definitions

  • the present invention relates to a light emitting device package, and more particularly, a thickness of a side portion and a thickness of an upper portion of a cap shape are uniformly formed, and a light emitting diode device having a multi-layered phosphor layer including a single color fluorescent material.
  • Such light emitting devices are used in automobile lights, traffic lights, BLUs (back light units) of liquid crystal displays due to the above-mentioned advantages.
  • the MacAdam Rule has been proposed as an index for evaluating whether the color coordinates measured by an artificial light source are the same as the color coordinates seen by the human eye.
  • This MacAdam Rule provides four levels of criteria. In the Americas, artificial light sources that do not meet the MacAdam Rule's three-stage criteria are not allowed to be sold. It is very important to reduce the color deviation of the white light to satisfy the three levels of the MacAdam Rule.
  • Korean Patent Laid-Open Publication No. 10-2008-0070193 discloses a fluorescent film in which a fluorescent material is formed on a film surface of a resin material, and a film of the fluorescent material and a resin material when the fluorescent film is attached to a light emitting diode device. It was difficult to reduce the color deviation of the white light because it was not effectively attached to the desired position due to the electrostatic force or the adhesive force, and the adhesion problem between the light emitting diode element and the fluorescent film was poor, resulting in reliability problems.
  • the present invention has been made to solve the problems of the prior art, the object of the present invention is to form a cap layer (cap) in the thickness of the side portion and the thickness of the upper uniformly formed phosphor layer comprising a single color fluorescent material
  • a cap layer in the thickness of the side portion and the thickness of the upper uniformly formed phosphor layer comprising a single color fluorescent material
  • a light emitting device package is a light emitting diode device that provides light of a wavelength of a predetermined region, disposed on the lower surface of the light emitting diode device and electrically connected to the light emitting diode device.
  • the first substrate and the side surface of the first phosphor layer is formed in a cap (cap) shape so as to surround the side and the upper surface of the light emitting diode element, the thickness of the side portion and the upper portion uniformly; It is formed in a cap shape so as to surround the upper surface, and includes a second phosphor layer formed uniformly the thickness of the side portion and the upper portion.
  • the first phosphor layer may include a red phosphor material
  • the second phosphor layer may include a green phosphor material
  • the first phosphor layer may include a green phosphor
  • the second phosphor layer may include a red phosphor
  • a light emitting device package is a light emitting diode device that provides light of a wavelength of a predetermined region, disposed on the lower surface of the light emitting diode device and electrically connected to the light emitting diode device.
  • the first substrate is formed in a cap shape so as to surround the circuit board, the side and the upper surface of the light emitting diode element, the thickness of the side portion and the thickness of the upper portion of the first phosphor layer, the side of the first phosphor layer and It is formed in a cap shape so as to surround the upper surface, and formed in a cap shape so as to surround the side surface and the upper surface of the second phosphor layer and the second phosphor layer and the thickness of the side portion and the top uniformly, And a third phosphor layer having a uniform thickness and an upper thickness.
  • the first phosphor layer includes a red phosphor
  • the second phosphor layer includes a yellow phosphor
  • the third phosphor layer includes a green phosphor. can do.
  • the first phosphor layer includes a red phosphor material
  • the second phosphor layer includes a green phosphor material
  • the third phosphor layer includes an yellow phosphor material. can do.
  • the first phosphor layer comprises an yellow fluorescent material
  • the second phosphor layer comprises a red fluorescent material
  • the third phosphor layer comprises a green fluorescent material can do.
  • the first phosphor layer includes a yellow phosphor
  • the second phosphor layer includes a green phosphor
  • the third phosphor layer includes a red phosphor. can do.
  • the first phosphor layer includes a green phosphor
  • the second phosphor layer includes a yellow phosphor
  • the third phosphor layer includes a red phosphor. can do.
  • the first phosphor layer includes a green phosphor material
  • the second phosphor layer includes a red phosphor material
  • the third phosphor layer includes an yellow phosphor material. can do.
  • the light emitting device package according to the embodiments of the present invention has a cap shape in which the thickness of the side part and the thickness of the upper part are uniformly formed, and the upper surface of the light emitting diode device having a multi-layered phosphor layer including a single color fluorescent material. By placing them on the side and side, there is an effect that can provide a variety of bright colors while suppressing the scattering caused by the combination of heterogeneous fluorescent materials.
  • FIG. 1 is a cross-sectional view of a light emitting device package according to an embodiment of the present invention.
  • FIG. 2 is a cross-sectional view of a light emitting device package according to another embodiment of the present invention.
  • the light emitting device package includes a light emitting diode device 1200, a circuit board 1100, a first phosphor layer 1310, and a second phosphor layer 1320 as shown in FIG. 1. Can be configured.
  • the light emitting diode device 1200 provides light having a wavelength in a predetermined region.
  • the light emitting diode device 1200 may provide blue light.
  • the circuit board 1100 is disposed on the lower surface of the light emitting diode device 1200 and electrically connected to the light emitting diode device 1200, the first phosphor layer 1310 is the side surface of the light emitting diode device 1200 And is formed in a cap shape so as to surround the upper surface, and the thickness of the side portion and the thickness of the upper portion are uniformly formed, and the second phosphor layer 1320 is formed on the side surface and the upper surface of the first phosphor layer 1310. It is formed in a cap shape so as to surround the arrangement, the thickness of the side portion and the thickness of the upper portion is formed uniformly.
  • the first phosphor layer 1310 includes a red phosphor material
  • the second phosphor layer 1320 includes a green phosphor material
  • the first phosphor layer 1310 includes a green phosphor material
  • the second phosphor layer 1320 may include a red phosphor.
  • the light emitting device package adjusts the thickness of the side portion, the thickness of the upper portion or the concentration of the fluorescent substance of the first phosphor layer 1310, or the thickness of the side portion of the second phosphor layer 1320, the thickness of the upper portion.
  • the concentration of the fluorescent material it is possible to adjust the color of the light provided.
  • the light emitting device package includes a light emitting diode device 2200, a circuit board 2100, a first phosphor layer 2310, a second phosphor layer 2320, and a third phosphor. It may be configured to include a phosphor layer 2330.
  • the light emitting diode device 2200 provides light having a wavelength in a predetermined region.
  • the light emitting diode device 2200 may provide blue light.
  • the circuit board 2100 is disposed on the bottom surface of the light emitting diode device 2200 and electrically connected to the light emitting diode device 2200, and the first phosphor layer 2310 is a side surface of the light emitting diode device 2200. And is formed in a cap shape so as to surround the top surface, and the thickness of the side portion and the thickness of the upper portion are uniformly formed, and the second phosphor layer 2320 is formed on the side surface and the top surface of the first phosphor layer 2310.
  • the third phosphor layer 2330 is formed in a cap shape so as to surround the side and the upper surface of the second phosphor layer 2320 Is formed, the thickness of the side portion and the thickness of the upper portion is formed uniformly.
  • the first phosphor layer 2310 may include a red phosphor
  • the second phosphor layer 2320 may include a yellow phosphor
  • the third phosphor layer 2330 may include a green phosphor.
  • the first phosphor layer 2310 may include a red phosphor
  • the second phosphor layer 2320 may include a green phosphor
  • the third phosphor layer 2330 may include a yellow phosphor. .
  • the first phosphor layer 2310 may include a yellow phosphor
  • the second phosphor layer 2320 may include a red phosphor
  • the third phosphor layer 2330 may include a green phosphor.
  • the first phosphor layer 2310 may include a yellow phosphor
  • the second phosphor layer 2320 may include a green phosphor
  • the third phosphor layer 2330 may include a red phosphor.
  • the first phosphor layer 2310 may include a green phosphor
  • the second phosphor layer 2320 may include a yellow phosphor
  • the third phosphor layer 2330 may include a red phosphor.
  • the first phosphor layer 2310 may include a green phosphor
  • the second phosphor layer 2320 may include a red phosphor
  • the third phosphor layer 2330 may include an yellow phosphor.
  • the light emitting device package adjusts the thickness of the side of the first phosphor layer 2310, the thickness of the upper portion or the concentration of the fluorescent material, or the thickness of the side of the second phosphor layer 2320, the thickness of the upper portion.
  • the color of light provided may be adjusted by adjusting the concentration of the fluorescent material or by adjusting the thickness of the side portion, the thickness of the upper portion, or the concentration of the fluorescent material of the third phosphor layer 2330.

Abstract

The present invention provides a light-emitting device package comprising: a light-emitting diode device for providing light of a wavelength in a predetermined region; a circuit board disposed at the lower surface of the light-emitting diode device so as to be electrically connected to the light-emitting diode device; a first phosphor layer formed in a cap shape so as to be disposed to encompass the side surfaces and the upper surface of the light-emitting diode device, and formed such that the thickness of a side part and the thickness of an upper part are uniform; and a second phosphor layer formed in a cap shape so as to be disposed to encompass the side surfaces and the upper surface of the first phosphor layer, and formed such that the thickness of a side part and the thickness of an upper part are uniform.

Description

발광 소자 패키지Light emitting device package
본 발명은 발광 소자 패키지에 관한 것으로서, 보다 상세하게는 캡(cap) 형상으로 측부의 두께 및 상부의 두께가 균일하게 형성되고 단일 색상의 형광 물질을 포함하는 형광체층을 색상별로 다층으로 발광 다이오드 소자의 상면과 측면에 배치함으로써, 이종 형광 물질의 배합으로 인한 산란을 억제하면서도 다양하고 선명한 색상한 빛을 제공할 수 있는 발광 소자 패키지에 관한 것이다.The present invention relates to a light emitting device package, and more particularly, a thickness of a side portion and a thickness of an upper portion of a cap shape are uniformly formed, and a light emitting diode device having a multi-layered phosphor layer including a single color fluorescent material. By disposing on the upper and side surfaces of the light emitting device package that can provide a variety of vivid color light while suppressing scattering due to the combination of heterogeneous fluorescent materials.
요즘 GaN에 Al 또는 In을 첨가한 발광 소자는 종래의 백열등에 비해 긴 수명, 낮은 전력 소비, 우수한 밝기, 인체에 유해하지 않은 환경 친화적 요소 등으로 인하여 주목받고 있으며, 특히 백색광을 제공하는 발광 소자가 더욱 더 각광받고 있다.Nowadays, a light emitting device in which Al or In is added to GaN is attracting attention due to long life, low power consumption, excellent brightness, and environmentally friendly elements that are not harmful to human bodies, compared to conventional incandescent lamps. It is getting more and more popular.
이러한 발광 소자는 상술한 장점으로 인하여 자동차 조명, 교통 신호등, 액정 표시 장치의 BLU(Back Light Unit) 등에 이용되고 있다.Such light emitting devices are used in automobile lights, traffic lights, BLUs (back light units) of liquid crystal displays due to the above-mentioned advantages.
최근에, 인공 광원에서 측정된 색좌표가 인간의 눈으로 보았을 때의 색좌표와 동일한 것인지를 평가하는 지표로서 MacAdam Rule이 제시되었다. 이러한 MacAdam Rule은 4 단계 기준을 제공하고 있다. 미주 지역에서는 MacAdam Rule의 3 단계 기준에 부합되지 못하는 인공 광원은 판매가 허가되지 않고 있는 실정이다. MacAdam Rule의 3 단계를 만족시키기 위해서는 백색광의 색 편차를 줄이는 것이 매우 중요하다.Recently, the MacAdam Rule has been proposed as an index for evaluating whether the color coordinates measured by an artificial light source are the same as the color coordinates seen by the human eye. This MacAdam Rule provides four levels of criteria. In the Americas, artificial light sources that do not meet the MacAdam Rule's three-stage criteria are not allowed to be sold. It is very important to reduce the color deviation of the white light to satisfy the three levels of the MacAdam Rule.
한편, 대한민국 공개특허공보 10-2008-0070193에는 수지재의 필름 면 상에 형광물질이 형성되어 있는 형광필름이 게시되어 있으며, 상술한 형광필름이 발광 다이오드 소자에 부착되는 경우에 형광물질과 수지재의 필름 사이에 정전기력(Electrostatic force)이나 접착력(Adhesive force)으로 인하여 원하는 위치에 효과적으로 부착되지 않아서 백색광의 색 편차를 줄이는 것이 어려웠으며 발광 다이오드 소자와 형광필름의 접착력이 좋지 않아 신뢰성 문제가 발생되었다.Meanwhile, Korean Patent Laid-Open Publication No. 10-2008-0070193 discloses a fluorescent film in which a fluorescent material is formed on a film surface of a resin material, and a film of the fluorescent material and a resin material when the fluorescent film is attached to a light emitting diode device. It was difficult to reduce the color deviation of the white light because it was not effectively attached to the desired position due to the electrostatic force or the adhesive force, and the adhesion problem between the light emitting diode element and the fluorescent film was poor, resulting in reliability problems.
또한, 상술한 형광 필름에 이종 형광 물질이 배합되는 경우에 이로 인하여 산란이 발생되어 에너지 효율이 저하되는 문제점이 있었다.In addition, when a heterogeneous fluorescent material is blended into the above-described fluorescent film, scattering may occur, thereby degrading energy efficiency.
따라서 본 발명은 종래 기술의 문제점을 해결하기 위하여 안출된 것으로, 본 발명의 목적은 캡(cap) 형상으로 측부의 두께 및 상부의 두께가 균일하게 형성되고 단일 색상의 형광 물질을 포함하는 형광체층을 색상별로 다층으로 발광 다이오드 소자의 상면과 측면에 배치함으로써, 이종 형광 물질의 배합으로 인한 산란을 억제하면서도 다양하고 선명한 색상한 빛을 제공할 수 있는 발광 소자 패키지를 제공하는 것이다.Therefore, the present invention has been made to solve the problems of the prior art, the object of the present invention is to form a cap layer (cap) in the thickness of the side portion and the thickness of the upper uniformly formed phosphor layer comprising a single color fluorescent material By providing a multi-layered color on the upper and side surfaces of the LED device, it is possible to provide a light emitting device package capable of providing various and vivid color lights while suppressing scattering due to the mixing of heterogeneous fluorescent materials.
본 발명이 이루고자 하는 기술적 과제들은 이상에서 언급한 기술적 과제들로 제한되지 않으며, 언급되지 않은 또 다른 기술적 과제들은 아래의 기재로부터 본 발명이 속하는 기술분야에서 통상의 지식을 가진 자에게 명확하게 이해될 수 있을 것이다.Technical problems to be achieved by the present invention are not limited to the above-mentioned technical problems, and other technical problems not mentioned above will be clearly understood by those skilled in the art from the following description. Could be.
상기와 같은 목적을 달성하기 위하여 본 발명의 일 실시예에 따른 발광 소자 패키지는 소정 영역의 파장의 빛을 제공하는 발광 다이오드 소자, 상기 발광 다이오드 소자의 하면에 배치되어 상기 발광 다이오드 소자와 전기적으로 연결되는 회로 기판, 상기 발광 다이오드 소자의 측면과 상면을 둘러싸며 배치되도록 캡(cap) 형상으로 형성되며, 측부의 두께 및 상부의 두께가 균일하게 형성된 제 1 형광체층 및 상기 제 1 형광체층의 측면과 상면을 둘러싸며 배치되도록 캡 형상으로 형성되며, 측부의 두께 및 상부의 두께가 균일하게 형성된 제 2 형광체층을 포함한다.In order to achieve the above object, a light emitting device package according to an embodiment of the present invention is a light emitting diode device that provides light of a wavelength of a predetermined region, disposed on the lower surface of the light emitting diode device and electrically connected to the light emitting diode device. The first substrate and the side surface of the first phosphor layer is formed in a cap (cap) shape so as to surround the side and the upper surface of the light emitting diode element, the thickness of the side portion and the upper portion uniformly; It is formed in a cap shape so as to surround the upper surface, and includes a second phosphor layer formed uniformly the thickness of the side portion and the upper portion.
본 발명의 일 실시예에 따른 발광 소자 패키지는, 상기 제 1 형광체층이 레드 형광 물질을 포함하고, 상기 제 2 형광체층은 그린 형광 물질을 포함할 수 있다.In the light emitting device package according to the embodiment of the present invention, the first phosphor layer may include a red phosphor material, and the second phosphor layer may include a green phosphor material.
본 발명의 일 실시예에 따른 발광 소자 패키지는, 상기 제 1 형광체층이 그린 형광 물질을 포함하고, 상기 제 2 형광체층은 레드 형광 물질을 포함할 수 있다.In the light emitting device package according to the embodiment of the present invention, the first phosphor layer may include a green phosphor, and the second phosphor layer may include a red phosphor.
상기와 같은 목적을 달성하기 위하여 본 발명의 다른 실시예에 따른 발광 소자 패키지는 소정 영역의 파장의 빛을 제공하는 발광 다이오드 소자, 상기 발광 다이오드 소자의 하면에 배치되어 상기 발광 다이오드 소자와 전기적으로 연결되는 회로 기판, 상기 발광 다이오드 소자의 측면과 상면을 둘러싸며 배치되도록 캡(cap) 형상으로 형성되며, 측부의 두께 및 상부의 두께가 균일하게 형성된 제 1 형광체층, 상기 제 1 형광체층의 측면과 상면을 둘러싸며 배치되도록 캡 형상으로 형성되며, 측부의 두께 및 상부의 두께가 균일하게 형성된 제 2 형광체층 및 상기 제 2 형광체층의 측면과 상면을 둘러싸며 배치되도록 캡 형상으로 형성되며, 측부의 두께 및 상부의 두께가 균일하게 형성된 제 3 형광체층을 포함한다.In order to achieve the above object, a light emitting device package according to another embodiment of the present invention is a light emitting diode device that provides light of a wavelength of a predetermined region, disposed on the lower surface of the light emitting diode device and electrically connected to the light emitting diode device. The first substrate is formed in a cap shape so as to surround the circuit board, the side and the upper surface of the light emitting diode element, the thickness of the side portion and the thickness of the upper portion of the first phosphor layer, the side of the first phosphor layer and It is formed in a cap shape so as to surround the upper surface, and formed in a cap shape so as to surround the side surface and the upper surface of the second phosphor layer and the second phosphor layer and the thickness of the side portion and the top uniformly, And a third phosphor layer having a uniform thickness and an upper thickness.
본 발명의 다른 실시예에 따른 발광 소자 패키지는, 상기 제 1 형광체층이 레드 형광 물질을 포함하고, 상기 제 2 형광체층은 엘로우 형광 물질을 포함하며, 상기 제 3 형광체층은 그린 형광 물질을 포함할 수 있다.In a light emitting device package according to another embodiment of the present invention, the first phosphor layer includes a red phosphor, the second phosphor layer includes a yellow phosphor, and the third phosphor layer includes a green phosphor. can do.
본 발명의 다른 실시예에 따른 발광 소자 패키지는, 상기 제 1 형광체층이 레드 형광 물질을 포함하고, 상기 제 2 형광체층은 그린 형광 물질을 포함하며, 상기 제 3 형광체층은 엘로우 형광 물질을 포함할 수 있다.In a light emitting device package according to another embodiment of the present invention, the first phosphor layer includes a red phosphor material, the second phosphor layer includes a green phosphor material, and the third phosphor layer includes an yellow phosphor material. can do.
본 발명의 다른 실시예에 따른 발광 소자 패키지는, 상기 제 1 형광체층이엘로우 형광 물질을 포함하고, 상기 제 2 형광체층은 레드 형광 물질을 포함하며, 상기 제 3 형광체층은 그린 형광 물질을 포함할 수 있다.The light emitting device package according to another embodiment of the present invention, the first phosphor layer comprises an yellow fluorescent material, the second phosphor layer comprises a red fluorescent material, the third phosphor layer comprises a green fluorescent material can do.
본 발명의 다른 실시예에 따른 발광 소자 패키지는, 상기 제 1 형광체층이 엘로우 형광 물질을 포함하고, 상기 제 2 형광체층은 그린 형광 물질을 포함하며, 상기 제 3 형광체층은 레드 형광 물질을 포함할 수 있다.In a light emitting device package according to another embodiment of the present invention, the first phosphor layer includes a yellow phosphor, the second phosphor layer includes a green phosphor, and the third phosphor layer includes a red phosphor. can do.
본 발명의 다른 실시예에 따른 발광 소자 패키지는, 상기 제 1 형광체층이 그린 형광 물질을 포함하고, 상기 제 2 형광체층은 엘로우 형광 물질을 포함하며, 상기 제 3 형광체층은 레드 형광 물질을 포함할 수 있다.In the light emitting device package according to another embodiment of the present invention, the first phosphor layer includes a green phosphor, the second phosphor layer includes a yellow phosphor, and the third phosphor layer includes a red phosphor. can do.
본 발명의 다른 실시예에 따른 발광 소자 패키지는, 상기 제 1 형광체층은 그린 형광 물질을 포함하고, 상기 제 2 형광체층은 레드 형광 물질을 포함하며, 상기 제 3 형광체층은 엘로우 형광 물질을 포함할 수 있다.In a light emitting device package according to another embodiment of the present invention, the first phosphor layer includes a green phosphor material, the second phosphor layer includes a red phosphor material, and the third phosphor layer includes an yellow phosphor material. can do.
본 발명의 실시예들에 따른 발광 소자 패키지는 캡(cap) 형상으로 측부의 두께 및 상부의 두께가 균일하게 형성되고 단일 색상의 형광 물질을 포함하는 형광체층을 색상별로 다층으로 발광 다이오드 소자의 상면과 측면에 배치함으로써, 이종 형광 물질의 배합으로 인한 산란을 억제하면서도 다양하고 선명한 색상한 빛을 제공할 수 있는 효과가 있다.The light emitting device package according to the embodiments of the present invention has a cap shape in which the thickness of the side part and the thickness of the upper part are uniformly formed, and the upper surface of the light emitting diode device having a multi-layered phosphor layer including a single color fluorescent material. By placing them on the side and side, there is an effect that can provide a variety of bright colors while suppressing the scattering caused by the combination of heterogeneous fluorescent materials.
도 1은 본 발명의 일 실시예에 따른 발광 소자 패키지의 단면도.1 is a cross-sectional view of a light emitting device package according to an embodiment of the present invention.
도 2는 본 발명의 다른 실시예에 따른 발광 소자 패지의 단면도.2 is a cross-sectional view of a light emitting device package according to another embodiment of the present invention.
이하, 본 발명의 바람직한 실시예를 첨부한 도면을 참조하여 설명하기로 한다. Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.
본 발명의 일 실시예에 따른 발광 소자 패키지는 도 1에 도시된 것처럼, 발광 다이오드 소자(1200), 회로 기판(1100), 제 1 형광체층(1310) 및 제 2 형광체층(1320)을 포함하여 구성될 수 있다.The light emitting device package according to the exemplary embodiment of the present invention includes a light emitting diode device 1200, a circuit board 1100, a first phosphor layer 1310, and a second phosphor layer 1320 as shown in FIG. 1. Can be configured.
이러한 발광 다이오드 소자(1200)는 소정 영역의 파장의 빛을 제공한다. 예를 들면, 발광 다이오드 소자(1200)는 청색의 빛을 제공할 수 있다.The light emitting diode device 1200 provides light having a wavelength in a predetermined region. For example, the light emitting diode device 1200 may provide blue light.
한편, 회로 기판(1100)은 상기 발광 다이오드 소자(1200)의 하면에 배치되어 상기 발광 다이오드 소자(1200)와 전기적으로 연결되고, 제 1 형광체층(1310)은 상기 발광 다이오드 소자(1200)의 측면과 상면을 둘러싸며 배치되도록 캡(cap) 형상으로 형성되며, 측부의 두께 및 상부의 두께가 균일하게 형성되고, 제 2 형광체층(1320)은 상기 제 1 형광체층(1310)의 측면과 상면을 둘러싸며 배치되도록 캡 형상으로 형성되며, 측부의 두께 및 상부의 두께가 균일하게 형성된다.On the other hand, the circuit board 1100 is disposed on the lower surface of the light emitting diode device 1200 and electrically connected to the light emitting diode device 1200, the first phosphor layer 1310 is the side surface of the light emitting diode device 1200 And is formed in a cap shape so as to surround the upper surface, and the thickness of the side portion and the thickness of the upper portion are uniformly formed, and the second phosphor layer 1320 is formed on the side surface and the upper surface of the first phosphor layer 1310. It is formed in a cap shape so as to surround the arrangement, the thickness of the side portion and the thickness of the upper portion is formed uniformly.
여기에서, 상기 제 1 형광체층(1310)은 레드 형광 물질을 포함하고, 상기 제 2 형광체층(1320)은 그린 형광 물질을 포함하거나, 상기 제 1 형광체층(1310)은 그린 형광 물질을 포함하고, 상기 제 2 형광체층(1320)은 레드 형광 물질을 포함할 수 있다.Here, the first phosphor layer 1310 includes a red phosphor material, the second phosphor layer 1320 includes a green phosphor material, or the first phosphor layer 1310 includes a green phosphor material The second phosphor layer 1320 may include a red phosphor.
본 발명의 일 실시예에 따른 발광 소자 패키지는 제 1 형광체층(1310)의 측부의 두께, 상부의 두께 또는 형광 물질의 농도를 조절하거나 제 2 형광체층(1320)의 측부의 두께, 상부의 두께 또는 형광 물질의 농도를 조절함으로써, 제공하는 빛의 색상을 조정할 수 있다.The light emitting device package according to the exemplary embodiment of the present invention adjusts the thickness of the side portion, the thickness of the upper portion or the concentration of the fluorescent substance of the first phosphor layer 1310, or the thickness of the side portion of the second phosphor layer 1320, the thickness of the upper portion. Alternatively, by adjusting the concentration of the fluorescent material, it is possible to adjust the color of the light provided.
본 발명의 다른 실시예에 따른 발광 소자 패키지는 도 2에 도시된 것처럼, 발광 다이오드 소자(2200), 회로 기판(2100), 제 1 형광체층(2310), 제 2 형광체층(2320) 및 제 3 형광체층(2330)을 포함하여 구성될 수 있다.As shown in FIG. 2, the light emitting device package according to another exemplary embodiment of the present invention includes a light emitting diode device 2200, a circuit board 2100, a first phosphor layer 2310, a second phosphor layer 2320, and a third phosphor. It may be configured to include a phosphor layer 2330.
이러한 발광 다이오드 소자(2200)는 소정 영역의 파장의 빛을 제공한다. 예를 들면, 발광 다이오드 소자(2200)는 청색의 빛을 제공할 수 있다.The light emitting diode device 2200 provides light having a wavelength in a predetermined region. For example, the light emitting diode device 2200 may provide blue light.
한편, 회로 기판(2100)은 상기 발광 다이오드 소자(2200)의 하면에 배치되어 상기 발광 다이오드 소자(2200)와 전기적으로 연결되고, 제 1 형광체층(2310)은 상기 발광 다이오드 소자(2200)의 측면과 상면을 둘러싸며 배치되도록 캡(cap) 형상으로 형성되며, 측부의 두께 및 상부의 두께가 균일하게 형성되고, 제 2 형광체층(2320)은 상기 제 1 형광체층(2310)의 측면과 상면을 둘러싸며 배치되도록 캡 형상으로 형성되며, 측부의 두께 및 상부의 두께가 균일하게 형성되고, 제 3 형광체층(2330)은 상기 제 2 형광체층(2320)의 측면과 상면을 둘러싸며 배치되도록 캡 형상으로 형성되며, 측부의 두께 및 상부의 두께가 균일하게 형성된다.Meanwhile, the circuit board 2100 is disposed on the bottom surface of the light emitting diode device 2200 and electrically connected to the light emitting diode device 2200, and the first phosphor layer 2310 is a side surface of the light emitting diode device 2200. And is formed in a cap shape so as to surround the top surface, and the thickness of the side portion and the thickness of the upper portion are uniformly formed, and the second phosphor layer 2320 is formed on the side surface and the top surface of the first phosphor layer 2310. It is formed in a cap shape so as to surround the disposed, the thickness of the side portion and the thickness of the upper portion is uniformly formed, the third phosphor layer 2330 is formed in a cap shape so as to surround the side and the upper surface of the second phosphor layer 2320 Is formed, the thickness of the side portion and the thickness of the upper portion is formed uniformly.
여기에서, 상기 제 1 형광체층(2310)은 레드 형광 물질을 포함하고, 상기 제 2 형광체층(2320)은 엘로우 형광 물질을 포함하며, 상기 제 3 형광체층(2330)은 그린 형광 물질을 포함하거나, 상기 제 1 형광체층(2310)은 레드 형광 물질을 포함하고, 상기 제 2 형광체층(2320)은 그린 형광 물질을 포함하며, 상기 제 3 형광체층(2330)은 엘로우 형광 물질을 포함할 수 있다.The first phosphor layer 2310 may include a red phosphor, the second phosphor layer 2320 may include a yellow phosphor, and the third phosphor layer 2330 may include a green phosphor. The first phosphor layer 2310 may include a red phosphor, the second phosphor layer 2320 may include a green phosphor, and the third phosphor layer 2330 may include a yellow phosphor. .
한편, 상기 제 1 형광체층(2310)은 엘로우 형광 물질을 포함하고, 상기 제 2 형광체층(2320)은 레드 형광 물질을 포함하며, 상기 제 3 형광체층(2330)은 그린 형광 물질을 포함하거나, 상기 제 1 형광체층(2310)은 엘로우 형광 물질을 포함하고, 상기 제 2 형광체층(2320)은 그린 형광 물질을 포함하며, 상기 제 3 형광체층(2330)은 레드 형광 물질을 포함할 수 있다.Meanwhile, the first phosphor layer 2310 may include a yellow phosphor, the second phosphor layer 2320 may include a red phosphor, and the third phosphor layer 2330 may include a green phosphor. The first phosphor layer 2310 may include a yellow phosphor, the second phosphor layer 2320 may include a green phosphor, and the third phosphor layer 2330 may include a red phosphor.
또한, 상기 제 1 형광체층(2310)은 그린 형광 물질을 포함하고, 상기 제 2 형광체층(2320)은 엘로우 형광 물질을 포함하며, 상기 제 3 형광체층(2330)은 레드 형광 물질을 포함하거나, 상기 제 1 형광체층(2310)은 그린 형광 물질을 포함하고, 상기 제 2 형광체층(2320)은 레드 형광 물질을 포함하며, 상기 제 3 형광체층(2330)은 엘로우 형광 물질을 포함할 수 있다.In addition, the first phosphor layer 2310 may include a green phosphor, the second phosphor layer 2320 may include a yellow phosphor, and the third phosphor layer 2330 may include a red phosphor. The first phosphor layer 2310 may include a green phosphor, the second phosphor layer 2320 may include a red phosphor, and the third phosphor layer 2330 may include an yellow phosphor.
본 발명의 다른 실시예에 따른 발광 소자 패키지는 제 1 형광체층(2310)의 측부의 두께, 상부의 두께 또는 형광 물질의 농도를 조절하거나 제 2 형광체층(2320)의 측부의 두께, 상부의 두께 또는 형광 물질의 농도를 조절하거나 제 3 형광체층(2330)의 측부의 두께, 상부의 두께 또는 형광 물질의 농도를 조절함으로써, 제공하는 빛의 색상을 조정할 수 있다.The light emitting device package according to another embodiment of the present invention adjusts the thickness of the side of the first phosphor layer 2310, the thickness of the upper portion or the concentration of the fluorescent material, or the thickness of the side of the second phosphor layer 2320, the thickness of the upper portion. Alternatively, the color of light provided may be adjusted by adjusting the concentration of the fluorescent material or by adjusting the thickness of the side portion, the thickness of the upper portion, or the concentration of the fluorescent material of the third phosphor layer 2330.
이상, 본 발명을 본 발명의 원리를 예시하기 위한 바람직한 실시예와 관련하여 설명하고 도시하였지만, 본 발명은 그와 같이 도시되고 설명된 그대로의 구성 및 작용으로 한정되는 것이 아니다. While the invention has been described and illustrated in connection with a preferred embodiment for illustrating the principles of the invention, the invention is not limited to the configuration and operation as such is shown and described.
오히려, 첨부된 청구범위의 사상 및 범주를 일탈함이 없이 본 발명에 대한 다수의 변경 및 수정이 가능함을 당업자들은 잘 이해할 수 있을 것이다.Rather, those skilled in the art will appreciate that many modifications and variations of the present invention are possible without departing from the spirit and scope of the appended claims.
따라서, 그러한 모든 적절한 변경 및 수정과 균등물들도 본 발명의 범위에 속하는 것으로 간주되어야 할 것이다.Accordingly, all such suitable changes and modifications and equivalents should be considered to be within the scope of the present invention.

Claims (10)

  1. 소정 영역의 파장의 빛을 제공하는 발광 다이오드 소자;A light emitting diode device providing light having a wavelength in a predetermined region;
    상기 발광 다이오드 소자의 하면에 배치되어 상기 발광 다이오드 소자와 전기적으로 연결되는 회로 기판;A circuit board disposed on a bottom surface of the light emitting diode element and electrically connected to the light emitting diode element;
    상기 발광 다이오드 소자의 측면과 상면을 둘러싸며 배치되도록 캡(cap) 형상으로 형성되며, 측부의 두께 및 상부의 두께가 균일하게 형성된 제 1 형광체층; 및A first phosphor layer formed in a cap shape so as to surround the side surface and the upper surface of the light emitting diode element, the thickness of the side portion and the thickness of the upper portion being uniformly formed; And
    상기 제 1 형광체층의 측면과 상면을 둘러싸며 배치되도록 캡 형상으로 형성되며, 측부의 두께 및 상부의 두께가 균일하게 형성된 제 2 형광체층을 포함하는 발광 다이오드 패키지.And a second phosphor layer formed in a cap shape so as to surround the side surface and the upper surface of the first phosphor layer and having a uniform thickness of the side portion and an upper portion thereof.
  2. 제 1 항에 있어서,The method of claim 1,
    상기 제 1 형광체층은 레드 형광 물질을 포함하고, 상기 제 2 형광체층은 그린 형광 물질을 포함하는 발광 소자 패키지.The first phosphor layer includes a red phosphor material, and the second phosphor layer comprises a green phosphor material.
  3. 제 1 항에 있어서,The method of claim 1,
    상기 제 1 형광체층은 그린 형광 물질을 포함하고, 상기 제 2 형광체층은 레드 형광 물질을 포함하는 발광 소자 패키지.The first phosphor layer includes a green phosphor material, and the second phosphor layer comprises a red phosphor material.
  4. 소정 영역의 파장의 빛을 제공하는 발광 다이오드 소자;A light emitting diode device providing light having a wavelength in a predetermined region;
    상기 발광 다이오드 소자의 하면에 배치되어 상기 발광 다이오드 소자와 전기적으로 연결되는 회로 기판;A circuit board disposed on a bottom surface of the light emitting diode element and electrically connected to the light emitting diode element;
    상기 발광 다이오드 소자의 측면과 상면을 둘러싸며 배치되도록 캡(cap) 형상으로 형성되며, 측부의 두께 및 상부의 두께가 균일하게 형성된 제 1 형광체층;A first phosphor layer formed in a cap shape so as to surround the side surface and the upper surface of the light emitting diode element, the thickness of the side portion and the thickness of the upper portion being uniformly formed;
    상기 제 1 형광체층의 측면과 상면을 둘러싸며 배치되도록 캡 형상으로 형성되며, 측부의 두께 및 상부의 두께가 균일하게 형성된 제 2 형광체층; 및A second phosphor layer formed in a cap shape so as to surround the side surface and the upper surface of the first phosphor layer, the thickness of the side portion and the thickness of the upper portion being uniformly formed; And
    상기 제 2 형광체층의 측면과 상면을 둘러싸며 배치되도록 캡 형상으로 형성되며, 측부의 두께 및 상부의 두께가 균일하게 형성된 제 3 형광체층을 포함하는 발광 다이오드 패키지.And a third phosphor layer formed in a cap shape so as to surround the side surface and the upper surface of the second phosphor layer and having a uniform thickness of the side portion and an upper portion thereof.
  5. 제 4 항에 있어서,The method of claim 4, wherein
    상기 제 1 형광체층은 레드 형광 물질을 포함하고, 상기 제 2 형광체층은 엘로우 형광 물질을 포함하며, 상기 제 3 형광체층은 그린 형광 물질을 포함하는 발광 소자 패키지.The first phosphor layer includes a red phosphor material, the second phosphor layer comprises a yellow phosphor material, and the third phosphor layer comprises a green phosphor material.
  6. 제 4 항에 있어서,The method of claim 4, wherein
    상기 제 1 형광체층은 레드 형광 물질을 포함하고, 상기 제 2 형광체층은 그린 형광 물질을 포함하며, 상기 제 3 형광체층은 엘로우 형광 물질을 포함하는 발광 소자 패키지.The first phosphor layer comprises a red phosphor material, the second phosphor layer comprises a green phosphor material, the third phosphor layer comprises a yellow phosphor material.
  7. 제 4 항에 있어서,The method of claim 4, wherein
    상기 제 1 형광체층은 엘로우 형광 물질을 포함하고, 상기 제 2 형광체층은 레드 형광 물질을 포함하며, 상기 제 3 형광체층은 그린 형광 물질을 포함하는 발광 소자 패키지.The first phosphor layer comprises an yellow fluorescent material, the second phosphor layer comprises a red fluorescent material, the third phosphor layer comprises a green fluorescent material.
  8. 제 4 항에 있어서,The method of claim 4, wherein
    상기 제 1 형광체층은 엘로우 형광 물질을 포함하고, 상기 제 2 형광체층은 그린 형광 물질을 포함하며, 상기 제 3 형광체층은 레드 형광 물질을 포함하는 발광 소자 패키지.The first phosphor layer comprises an yellow fluorescent material, the second phosphor layer comprises a green fluorescent material, the third phosphor layer comprises a red fluorescent material.
  9. 제 4 항에 있어서,The method of claim 4, wherein
    상기 제 1 형광체층은 그린 형광 물질을 포함하고, 상기 제 2 형광체층은 엘로우 형광 물질을 포함하며, 상기 제 3 형광체층은 레드 형광 물질을 포함하는 발광 소자 패키지.The first phosphor layer comprises a green phosphor material, the second phosphor layer comprises an yellow phosphor material, and the third phosphor layer comprises a red phosphor material.
  10. 제 4 항에 있어서,The method of claim 4, wherein
    상기 제 1 형광체층은 그린 형광 물질을 포함하고, 상기 제 2 형광체층은 레드 형광 물질을 포함하며, 상기 제 3 형광체층은 엘로우 형광 물질을 포함하는 발광 소자 패키지.The first phosphor layer comprises a green phosphor material, the second phosphor layer comprises a red phosphor material, the third phosphor layer comprises a yellow phosphor material.
PCT/KR2016/006836 2016-06-27 2016-06-27 Light-emitting device package WO2018004018A1 (en)

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094262A (en) * 2007-10-09 2009-04-30 Toyoda Gosei Co Ltd Method for manufacturing light-emitting device
JP2010182809A (en) * 2009-02-04 2010-08-19 Stanley Electric Co Ltd Semiconductor light-emitting apparatus
JP2010245576A (en) * 2010-08-06 2010-10-28 Dowa Electronics Materials Co Ltd Light emitting device and manufacturing method therefor
KR20130014256A (en) * 2011-07-29 2013-02-07 엘지이노텍 주식회사 Light emitting device package and lighting system using the same
JP2014203932A (en) * 2013-04-03 2014-10-27 株式会社東芝 Light-emitting device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009094262A (en) * 2007-10-09 2009-04-30 Toyoda Gosei Co Ltd Method for manufacturing light-emitting device
JP2010182809A (en) * 2009-02-04 2010-08-19 Stanley Electric Co Ltd Semiconductor light-emitting apparatus
JP2010245576A (en) * 2010-08-06 2010-10-28 Dowa Electronics Materials Co Ltd Light emitting device and manufacturing method therefor
KR20130014256A (en) * 2011-07-29 2013-02-07 엘지이노텍 주식회사 Light emitting device package and lighting system using the same
JP2014203932A (en) * 2013-04-03 2014-10-27 株式会社東芝 Light-emitting device

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