CN106252489A - Package structure for LED - Google Patents
Package structure for LED Download PDFInfo
- Publication number
- CN106252489A CN106252489A CN201610886931.5A CN201610886931A CN106252489A CN 106252489 A CN106252489 A CN 106252489A CN 201610886931 A CN201610886931 A CN 201610886931A CN 106252489 A CN106252489 A CN 106252489A
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- China
- Prior art keywords
- light
- led
- emitting diode
- package structure
- backlight unit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract 4
- 238000004020 luminiscence type Methods 0.000 claims description 2
- 239000010410 layer Substances 0.000 claims 19
- 238000002834 transmittance Methods 0.000 claims 11
- 239000012790 adhesive layer Substances 0.000 claims 4
- 238000005253 cladding Methods 0.000 claims 3
- 238000004806 packaging method and process Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 8
- 230000000694 effects Effects 0.000 abstract description 7
- 239000000084 colloidal system Substances 0.000 description 86
- 230000002093 peripheral effect Effects 0.000 description 29
- 238000007789 sealing Methods 0.000 description 15
- 239000000758 substrate Substances 0.000 description 11
- 239000012530 fluid Substances 0.000 description 6
- 239000003292 glue Substances 0.000 description 6
- 239000000565 sealant Substances 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 238000012856 packing Methods 0.000 description 4
- 239000003086 colorant Substances 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000741 silica gel Substances 0.000 description 1
- 229910002027 silica gel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000000904 thermoluminescence Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The present invention provides a kind of package structure for LED, including a base, has a line layer；One light-emitting diode chip for backlight unit, configuration on the base and is electrically connected with this line layer；One photic zone, is configured on this base；And a wavelength conversion layer, between this light-emitting diode chip for backlight unit and this photic zone, and cover this light-emitting diode chip for backlight unit, wherein this photic zone has a smooth upper surface, and a side surface of this base and this euphotic side surface constitute a side plane of this package structure for LED.The technical program can have and bigger laterally goes out light intensity and preferably optical uniformity, and can reach effect of area source.
Description
Relevant divisional application
Subject application is invention entitled " package structure for LED ", the invention of Application No. 201310174294.5
The divisional application of international application for patent case, the applying date of original application case is 2013 13 days on the 05th.
Technical field
The invention relates to a kind of semiconductor package, and in particular to a kind of LED package knot
Structure.
Background technology
Along with the progress of photoelectric technology, in order to replace the New Times light source of conventional incandescent bulb and fluorescent tube-luminous two
Pole pipe (Light-emitting diode, LED)-technology the most ripe.Due to light emitting diode have low power consumption,
The advantages such as volume thermoluminescence little, non-, environmental protection, therefore its application is the most expanded.
LED source is a kind of light source with directivity, so the light being positioned at LED source front is straight
Penetrate district and be generally of higher brightness, result in the problem that LED source easily has dazzle.In general, luminous two
In the pipe encapsulating structure of pole, the packing colloid being covered on light-emitting diode chip for backlight unit is the shape in lens, but, use lens
The packing colloid of shape, its rising angle is limited, it is impossible to has bigger rising angle and reaches effect of area source.
Summary of the invention
The present invention provides a kind of package structure for LED, and it has and bigger laterally goes out light intensity.
The package structure for LED of the present invention, it includes a light-emitting component and a transparent enclosure colloid.Luminous unit
Part has a upper surface.Transparent enclosure colloid is configured on light-emitting component, and covers upper surface.Transparent enclosure colloid has each other
A relative top surface and a basal surface and connect the first peripheral surface of top surface and basal surface.First peripheral surface
The horizontal projected area of the surface area upper surface more than or equal to four times.
In one embodiment of this invention, the surface area of the top surface of above-mentioned transparent enclosure colloid is equal to the water of upper surface
Flat projected area.
In one embodiment of this invention, above-mentioned light-emitting component has one second peripheral surface, and the second peripheral surface
Trim with the first peripheral surface.
In one embodiment of this invention, above-mentioned transparent enclosure colloid is completely covered the upper surface of light-emitting component.
In one embodiment of this invention, above-mentioned light-emitting component includes a carrier and at least one light-emitting diodes tube core
Sheet.Carrier has a depression.Light-emitting diode chip for backlight unit is configured in depression and light-emitting diode chip for backlight unit electrically connects with carrier
Connect.
In one embodiment of this invention, above-mentioned light-emitting component includes a substrate and at least one light-emitting diodes tube core
Sheet.Light-emitting diode chip for backlight unit is overlying on substrate and is connected with electrical property of substrate.Light-emitting diode chip for backlight unit has an exiting surface, and goes out
Bright finish is towards the basal surface of transparent enclosure colloid.
In one embodiment of this invention, above-mentioned light-emitting component also includes a Wavelength transformational structure, Wavelength transformational structure
It is covered on light-emitting diode chip for backlight unit.
In one embodiment of this invention, above-mentioned transparent enclosure colloid includes one first sealing portion and one second sealing
Portion.First sealing portion is positioned between the second sealing portion and light-emitting component.The refractive index in the first sealing portion is more than the second sealing portion
Refractive index.
In one embodiment of this invention, above-mentioned package structure for LED also includes that a reflectance is more than 90%
Reflecting layer, is configured on the top surface of transparent enclosure colloid.
The package structure for LED of the present invention, it includes a light-emitting component and a transparent enclosure colloid.Luminous unit
Part has a upper surface.Transparent enclosure colloid is configured on light-emitting component, and covers upper surface.Transparent enclosure colloid has each other
A relative top surface and a basal surface and connect the first peripheral surface of top surface and basal surface.Light-emitting component has one
Second peripheral surface, the second peripheral surface and the first peripheral surface trim, and the top surface of transparent enclosure colloid and basal surface it
Between maximum normal distance more than the maximum gauge of light-emitting component.
In one embodiment of this invention, the surface area of the top surface of above-mentioned transparent enclosure colloid is equal to the water of upper surface
Flat projected area.
The package structure for LED of the present invention, it includes a light-emitting component and a transparent enclosure colloid.Luminous unit
Part has a upper surface.Transparent enclosure colloid is configured on light-emitting component, and covers upper surface.Transparent enclosure colloid has each other
A relative top surface and a basal surface.The surface area of the top surface of transparent enclosure colloid is equal to the horizontal plane of upper surface
Long-pending, and the maximum normal distance between the top surface of transparent enclosure colloid and basal surface is more than the maximum gauge of light-emitting component.
Based on above-mentioned, owing to the present invention is that the surface area of the first peripheral surface utilizing transparent enclosure colloid is more than or equal to four
The horizontal projected area of the upper surface of light-emitting component again, or, between top surface and the basal surface of transparent enclosure colloid
Maximum normal distance, more than the maximum gauge of light-emitting component, improves the lateralarea of transparent enclosure colloid.When transparent enclosure glue
The lateralarea of body is once enhanced, and therefore its side amount of light also can promote.Furthermore, the peripheral table of the first of transparent enclosure colloid
The surface area in face is more than or equal to four times with the ratio of the horizontal projected area of the upper surface of light-emitting component, can be effectively by light-emitting component
The light sent is distributed to the side of transparent enclosure colloid and is gone out light by the side of transparent enclosure colloid.Consequently, it is possible to the present invention
Package structure for LED can have and bigger laterally go out light intensity and preferably optical uniformity, and can reach area source
Effect.
For the features described above of the present invention and advantage can be become apparent, special embodiment below, and coordinate accompanying drawing to make in detail
Carefully it is described as follows.
Accompanying drawing explanation
Figure 1A is shown as the generalized section of a kind of package structure for LED of one embodiment of the invention；
Figure 1B is shown as the generalized section of a kind of package structure for LED of another embodiment of the present invention；
Fig. 1 C is shown as the generalized section of a kind of package structure for LED of another embodiment of the present invention；
Fig. 2 is shown as the generalized section of a kind of package structure for LED of another embodiment of the present invention；
Fig. 3 is shown as the generalized section of a kind of package structure for LED of another embodiment of the present invention；
Fig. 4 is shown as the generalized section of a kind of package structure for LED of another embodiment of the present invention；
Fig. 5 is shown as the generalized section of a kind of package structure for LED of another embodiment of the present invention；
Fig. 6 is shown as the generalized section of a kind of package structure for LED of another embodiment of the present invention.
Description of reference numerals:
100a, 100a ', 100a ", 100b, 100c, 100d, 100e, 100f: package structure for LED；
110a, 110a ', 110a ", 110b, 110c: light-emitting component；
112a: carrier；
112b, 112c: substrate；
113a: depression；
113b: the second peripheral surface；
114a, 114b, 114c: light-emitting diode chip for backlight unit；
115a: housing；
115b, 115c: exiting surface；
116a, 116a ': fluid sealant；
116c: Wavelength transformational structure；
117a: line layer；
120a, 120a ', 120b, 120d, 120e, 120f: transparent enclosure colloid；
121d: the first sealing portion；
122a, 122b, 122e, 122f: top surface；
123d: the second sealing portion；
124a, 124a ', 124b, 124e, 124f: basal surface；
126a, 126b, 126e, 126f: the first peripheral surface；
130: bonding wire；
140: reflecting layer；
B1, B2, B3, B4, B5: upper surface；
S: confined space；
S1: region；
H1, H2, H3, H4: maximum normal distance；
T1, T2, T3: maximum gauge.
Detailed description of the invention
Figure 1A is shown as the generalized section of a kind of package structure for LED of one embodiment of the invention.Refer to
Figure 1A, in the present embodiment, package structure for LED 100a includes a light-emitting component 110a and a transparent enclosure colloid
120a.Light-emitting component 110a has a upper surface B1.Transparent enclosure colloid 120a body is configured on light-emitting component 110a, and covers
Upper surface B1.Transparent enclosure colloid 120a has a top surface 122a relative to each other and a basal surface 124a and one and connects top
The first peripheral surface 126a of surface 122a and basal surface 124a.Particularly, first peripheral surface of transparent enclosure colloid 120a
The horizontal projected area of the surface area of the 126a upper surface B1 more than or equal to four times.
Specifically, in the present embodiment, light-emitting component 110a includes a carrier 112a, at least one light-emitting diodes tube core
Sheet 114a (shown schematically only illustrating one in a Figure 1A) and fluid sealant 116a.Carrier 112a has a depression 113a and
Second peripheral surface 113b, wherein transparent enclosure colloid 120a and carrier 112a defines a confined space S.Light emitting diode
Chip 114a is configured in depression 113a and is positioned in confined space S, wherein light-emitting diode chip for backlight unit 114a and carrier 112a
It is electrically connected with.Fluid sealant 116a is filled in confined space S, and covering luminousing diode chip 114a, as shown in Figure 1A, seals
Glue 116a fills up confined space S.For further, carrier 112a herein can be for example and set by a housing 115a and
The line layer 117a being placed on housing 115a is formed.The package structure for LED 100a of the present embodiment also includes at least one
Bonding wire 130, wherein light-emitting diode chip for backlight unit 114a is electrically connected with by the line layer 117a of bonding wire 130 with carrier 112a.When
So, in other unshowned embodiments, carrier also can be made up of lead frame and the housing being connected with lead frame, and this still belongs to
In the adoptable technical scheme of the present invention, the scope to be protected without departing from the present invention.
As shown in Figure 1A, the transparent enclosure colloid 120a of the present embodiment is completely covered the upper surface B1 of light-emitting component.Transparent
The surface area of the top surface 122a of the packing colloid 120a horizontal projected area equal to upper surface B1.Transparent enclosure colloid 120a's
Maximum normal distance H1 between top surface 122a and basal surface 124a is more than the maximum gauge T1 of light-emitting component 110a.Outside first
Enclose surface 126a and the second peripheral surface 113b substantially to trim, i.e. the package structure for LED 100a of the present embodiment can
It is a cuboid or a cube, is not any limitation as at this.Furthermore, the carrier 112a of the light-emitting component 110a of the present embodiment
Directly contact the partial bottom surface 124a of transparent enclosure colloid 120a with fluid sealant 116a, and define upper surface B1.Such as Figure 1A
Shown in, upper surface B1 is a horizontal plane, and transparent enclosure colloid 120a the most directly covers upper surface B1, when upper surface B1 is one
During horizontal plane, the horizontal projected area of upper surface B1 is i.e. equal to the area of upper surface B1.Additionally, the transparent enclosure glue of the present embodiment
The refractive index of body 120a is e.g. between 1.1 to 1.7, it is preferred that the refractive index of transparent enclosure colloid 120a is by basal surface
124a gradually successively decreases towards top surface 122a.Herein, the material of transparent enclosure colloid 120a e.g. silica gel (silicone), ring
Epoxy resins (epoxy resin) or ultraviolet curing (UV-cured) glue.
Owing to the surface area that the present embodiment is the first peripheral surface 126a utilizing transparent enclosure colloid 120a is more than or equal to
The horizontal projected area of the upper surface B1 of four times, improves the lateralarea of transparent enclosure colloid 120a.When transparent enclosure colloid
The lateralarea of 120a is once enhanced, and therefore the side amount of light of transparent enclosure colloid 120a also can promote.Furthermore, transparent envelope
The surface area of the first peripheral surface 126a of dress colloid 120a and the horizontal projected area of the upper surface B1 of light-emitting component 110a
Ratio is more than or equal to four times, and the light that light-emitting component 110a is sent can effectively be distributed to the side of transparent enclosure colloid 120a
(the i.e. first peripheral surface 126a), and gone out light by the side of transparent enclosure colloid 120a.Consequently, it is possible to the luminescence two of the present embodiment
Pole pipe encapsulating structure 100a can have and bigger laterally goes out light intensity and preferably optical uniformity, and can reach the merit of area source
Effect.
Should be noted that at this, following embodiment continues to use element numbers and the partial content of previous embodiment, wherein adopts
Be denoted by the same reference numerals the identical or element of approximation, and eliminates the explanation of constructed content.About clipped
Explanation refer to previous embodiment, it is no longer repeated for following embodiment.
Figure 1B is shown as the generalized section of a kind of package structure for LED of another embodiment of the present invention.Please join
Examining Figure 1B, the package structure for LED 100a of the package structure for LED 100a ' and Figure 1A of the present embodiment is main
Difference is to be: the fluid sealant 116a ' unfilled confined space S of the light-emitting component 110a ' of the present embodiment.As shown in Figure 1B,
The upper surface B2 of the light-emitting component 110a ' of the present embodiment is not a horizontal plane, and transparent enclosure colloid 120a is completely covered
Surface B2, wherein the subregion not in direct contact upper surface B2 of transparent enclosure colloid 120a, and this not in contact with region S1
In there are air or without air.
Fig. 1 C is shown as the generalized section of a kind of package structure for LED of another embodiment of the present invention.Please join
Examine Fig. 1 C, the package structure for LED 100a of the present embodiment " main with the package structure for LED 100a of Figure 1A
Difference is to be: the light-emitting component 110a of the present embodiment " do not have fluid sealant 116a ', and transparent enclosure colloid 120a ' also extends
It is filled in confined space S and covering luminousing diode chip 114a, line layer 117a, bonding wire 130, say, that transparent envelope
The basal surface 124a ' of dress colloid 120a ' can directly contact housing 115a.Now, light-emitting component 110a " upper surface B3 be i.e. with
The surface that transparent enclosure colloid 120a ' is contacted.
Fig. 2 is shown as the generalized section of a kind of package structure for LED of another embodiment of the present invention.Please join
Examine Fig. 2, the difference main for package structure for LED 100a of package structure for LED 100b Yu Figure 1A of the present embodiment
Different it is: the light-emitting component 110b of the present embodiment is different from the light-emitting component 110a of previous embodiment.Specifically, the present embodiment
Light-emitting component 110b include an a substrate 112b and light-emitting diode chip for backlight unit 114b.Substrate 112b has the second peripheral surface
113b.Light-emitting diode chip for backlight unit 114b is overlying on substrate 112b and is electrically connected with substrate 112b.That is, light-emitting diode chip for backlight unit
114b is to be electrically connected with substrate 112b by the way of chip bonding.Light-emitting diode chip for backlight unit 114b has an exiting surface
115b, wherein exiting surface 115b is towards the basal surface 124b of transparent enclosure colloid 120b.Herein, the upper surface of light-emitting component 110b
B4 refers to the surface directly contacted with transparent enclosure colloid 120b, and a light-emitting diode chip for backlight unit 114b e.g. blue light emitting two
Pole die.
Owing to the surface area of the first peripheral surface 126b of the transparent enclosure colloid 120b of the present embodiment is more than or equal to four times
The horizontal projected area of upper surface B4, and the maximum between the top surface 122b and basal surface 124b of transparent enclosure colloid 120b
Vertical dimension H2 is more than the maximum gauge T2 of light-emitting component 110b.The light that light-emitting diode chip for backlight unit 114b is sent is from exiting surface
115b is incident to transparent enclosure colloid 120b, and maximum normal distance H2 of transparent enclosure colloid 120b can affect light emitting diode envelope
Assembling structure 100b laterally goes out light intensity.For example, when maximum normal distance H2 of transparent enclosure colloid 120b is the biggest, can make
Package structure for LED 100b laterally to go out light the strongest, and then make Integral luminous diode package structure 100b have relatively
Big laterally go out light intensity and preferably optical uniformity.
Fig. 3 is shown as the generalized section of a kind of package structure for LED of another embodiment of the present invention.Please join
Examine Fig. 3, the difference main for package structure for LED 100b of package structure for LED 100c Yu Fig. 2 of the present embodiment
It is: the package structure for LED 100c of the present embodiment also includes a reflecting layer 140, and wherein reflecting layer 140 is configured at
On the top surface 122b of bright packing colloid 120b.Herein, the reflectance in reflecting layer 140 is more than 90%, the wherein material in reflecting layer 140
Matter e.g. silver or aluminum.
Additionally, the light-emitting component 110c of the present embodiment is optionally included with a Wavelength transformational structure 116c, its medium wavelength
Transformational structure 116c is covered on light-emitting diode chip for backlight unit 114c and substrate 112c.Consequently, it is possible to light-emitting diodes tube core can be made
Light (such as blue light) produced by sheet 114c can by Wavelength transformational structure 116c be converted to different colours light (as green glow,
Gold-tinted or HONGGUANG), then produce white light after the light mixing of different colours.As it is shown on figure 3, Wavelength transformational structure 116c is direct
Contact transparent enclosure colloid 120b, and the surface that Wavelength transformational structure 116c and transparent enclosure colloid 120b contacts is upper surface
B5。
Owing to the surface area of the first peripheral surface 126b of the transparent enclosure colloid 120b of the present embodiment is more than or equal to four times
The horizontal projected area of upper surface B5, and the maximum between the top surface 122b and basal surface 124b of transparent enclosure colloid 120b
Vertical dimension H2 is more than the maximum gauge T3 of light-emitting component 110c, and reflecting layer 140 is configured at the top of transparent enclosure colloid 120b
On the 122b of surface.Therefore, the light sent as light-emitting diode chip for backlight unit 114c is incident to transparent enclosure colloid from exiting surface 115c
During 120b, the light of directive top surface 122b can pass after turning again to transparent enclosure colloid 120b because of the reflection in reflecting layer 140
First peripheral surface 126b injection.Consequently, it is possible to the side that can be effectively increased Integral luminous diode package structure 100c goes out light
Efficiency.
Fig. 4 is shown as the generalized section of a kind of package structure for LED of another embodiment of the present invention.Please join
Examine Fig. 4, the difference main for package structure for LED 100a of package structure for LED 100d Yu Figure 1A of the present embodiment
Different it is: the transparent enclosure colloid 120d of the package structure for LED 100d of the present embodiment includes one first sealing portion 121d
And one second sealing portion 123d.Specifically, the first sealing portion 121d is between the second sealing portion 123d and light-emitting component
110a, and light-emitting component 110a direct contact portion the first sealing portion 121d, and the refractive index of the first sealing portion 121d is more than the
The refractive index of two sealing portion 123d.
Fig. 5 is shown as the generalized section of a kind of package structure for LED of another embodiment of the present invention.Please join
Examine Fig. 5, the difference main for package structure for LED 100a of package structure for LED 100e Yu Figure 1A of the present embodiment
Different it is: the design of transparent enclosure colloid 120e.Specifically, in the present embodiment, outside the first of transparent enclosure colloid 120e
The the second peripheral surface 113b enclosing surface 126e and light-emitting component 110a substantially trims, and the top table of transparent enclosure colloid 120e
Maximum normal distance H3 between face 122e and basal surface 124e is more than the maximum gauge T1 of light-emitting component 110a.Herein, such as Fig. 5
Shown in, the profile of the top surface 122e of the transparent enclosure colloid 120e of the present embodiment is embodied as arc-shaped curved surface.
Due to the present embodiment transparent enclosure colloid 120e the first peripheral surface 126e and light-emitting component 110a second
Peripheral surface 113b substantially trims, and the maximum between the top surface 122e and basal surface 124e of transparent enclosure colloid 120e is hung down
Straight distance H3 is more than the maximum gauge T1 of light-emitting component 110a.Therefore, the package structure for LED 100e of the present embodiment can
Have and bigger laterally go out light intensity and preferably optical uniformity.Certainly, in other unshowned embodiments, the skill of this area
Art personnel work as the explanation that can refer to previous embodiment, and selection at the light-emitting diode chip for backlight unit 114b as mentioned by previous embodiment is
The light-emitting component 110b being electrically connected with substrate 112b by the way of chip bonding reaches required technique effect, and this still belongs to
In the adoptable technical scheme of the present invention, the scope to be protected without departing from the present invention.
Fig. 6 is shown as the generalized section of a kind of package structure for LED of another embodiment of the present invention.Please join
Examine Fig. 6, the difference main for package structure for LED 100c of package structure for LED 100f Yu Fig. 3 of the present embodiment
It is: the package structure for LED 100f of the present embodiment there is no and arranges reflecting layer 140, and the transparent enclosure glue of the present embodiment
The design of body 120f is different from the design of transparent enclosure colloid 120b.Specifically, the transparent enclosure colloid 120f of the present embodiment
The surface area of top surface 122f equal to the horizontal projected area of upper surface B5, and the top surface 122f of transparent enclosure colloid 120f
With maximum normal distance H4 between basal surface 124f is more than the maximum gauge T3 of light-emitting component 110c.Herein, as shown in Figure 6,
The section shape of the transparent enclosure colloid 120f of the present embodiment is embodied as class hexagon.
Owing to the surface area of the top surface 122f of the transparent enclosure colloid 120f of the present embodiment is equal to the level of upper surface B5
Maximum normal distance H4 between projected area, and the top surface 122f and basal surface 124f of transparent enclosure colloid 120f is more than sending out
The maximum gauge T3 of optical element 110c.The light that light-emitting diode chip for backlight unit 114c is sent is incident to transparent enclosure from exiting surface 115c
Colloid 120f, can make package structure for LED 100f laterally to go out light the strongest, and then make Integral luminous diode package
Structure 100f has and bigger laterally goes out light intensity and preferably optical uniformity.Certainly, in other unshowned embodiments, this
The technical staff in field works as the explanation that can refer to previous embodiment, selects at the light-emitting diodes tube core as mentioned by previous embodiment
Sheet 114a is that the light-emitting component 110a being electrically connected with carrier 112a by the way of bonding wire 130 engages reaches required skill
Art effect, this still falls within the adoptable technical scheme of the present invention, the scope to be protected without departing from the present invention.
In sum, it is more than or equal to four due to the surface area that the present invention is the first peripheral surface utilizing transparent enclosure colloid
The horizontal projected area of the upper surface of light-emitting component again, or, between top surface and the basal surface of transparent enclosure colloid
Maximum normal distance, more than the maximum gauge of light-emitting component, improves the lateralarea of transparent enclosure colloid.When transparent enclosure glue
The lateralarea of body is once enhanced, and therefore its side amount of light also can promote.Furthermore, the peripheral table of the first of transparent enclosure colloid
The surface area in face is more than or equal to four times with the ratio of the horizontal projected area of the upper surface of light-emitting component, can be effectively by light-emitting component
The light sent is distributed to the side of transparent enclosure colloid and is gone out light by the side of transparent enclosure colloid.Consequently, it is possible to the present invention
Package structure for LED can have and bigger laterally go out light intensity and preferably optical uniformity, and can reach area source
Effect.
Last it is noted that various embodiments above is only in order to illustrate technical scheme, it is not intended to limit；To the greatest extent
The present invention has been described in detail by pipe with reference to foregoing embodiments, it will be understood by those within the art that: it depends on
So the technical scheme described in foregoing embodiments can be modified, or the most some or all of technical characteristic is entered
Row equivalent；And these amendments or replacement, do not make the essence of appropriate technical solution depart from various embodiments of the present invention technology
The scope of scheme.
Claims (10)
1. a package structure for LED, it is characterised in that including:
One base, has a line layer；
One light-emitting diode chip for backlight unit, configuration on the base and is electrically connected with this line layer；
One photic zone, is configured on this base；And
One wavelength conversion layer, between this light-emitting diode chip for backlight unit and this photic zone, and covers this light-emitting diode chip for backlight unit,
Wherein this photic zone has a smooth upper surface, and a side surface of this base and this euphotic side surface are constituted
One side plane of this package structure for LED.
Package structure for LED the most according to claim 1, it is characterised in that this photic zone includes one first printing opacity
Portion and one second transmittance section, this first transmittance section between this second transmittance section and this light-emitting diode chip for backlight unit, and this
The refractive index of one transmittance section is more than the refractive index of this second transmittance section.
Package structure for LED the most according to claim 1, it is characterised in that also include a reflecting layer, be configured at
On this photic zone.
Package structure for LED the most according to claim 1, it is characterised in that this package structure for LED
This side plane further includes a side surface of this wavelength conversion layer.
5. a package structure for LED, it is characterised in that including:
One base, has a line layer；
One light-emitting diode chip for backlight unit, is configured on this base and is electrically connected with this line layer；
One photic zone, is configured on this base；
One wavelength conversion layer, covers this light-emitting diode chip for backlight unit position between this photic zone and this light-emitting diode chip for backlight unit；With
And
One reflecting wall, is positioned on this base and around this light-emitting diode chip for backlight unit；
Wherein this photic zone has a smooth upper surface, and a side surface of this reflecting wall and this euphotic side surface structure
Become a side plane of this package structure for LED.
6. a package structure for LED, it is characterised in that including:
One base, has a line layer；
One light-emitting diode chip for backlight unit, is electrically connected with this line layer；
One reflecting wall, connects this base and around this light-emitting diode chip for backlight unit；
One adhesive layer, cladding at least partly this light-emitting diode chip for backlight unit position this light-emitting diode chip for backlight unit and this reflecting wall it
Between；And
One photic zone, covers this reflecting wall and this packaging plastic；
Wherein this photic zone has a smooth upper surface, and a side surface of this reflecting wall and this euphotic side surface structure
Become a side plane of this package structure for LED.
7. a package structure for LED, it is characterised in that including:
One carrier, including a line layer and a reflecting wall；
One light-emitting diode chip for backlight unit, is arranged on this carrier and is electrically connected with this line layer, and this reflecting wall is around this luminescence
Diode chip for backlight unit；
One photic zone, covers this carrier and this light emitting diode；And
One adhesive layer, cladding at least partly this light-emitting diode chip for backlight unit position this light-emitting diode chip for backlight unit and this reflecting wall it
Between；
Wherein this photic zone has a smooth upper surface, and a side surface of this carrier and this euphotic side surface structure
Become a side plane of this package structure for LED.
8. a package structure for LED, it is characterised in that including:
One carrier, including a line layer；
One light-emitting diode chip for backlight unit, is arranged on this carrier and is electrically connected with this line layer；
One photic zone, covers this this carrier and this light emitting diode；And
One adhesive layer, cladding at least partly this light-emitting diode chip for backlight unit；
Wherein this photic zone has a high refractive index layer portion and a low-index layer portion, and this high refractive index layer position is at this adhesive layer
And between this low-index layer, and a side surface of a side surface of this carrier and this printing opacity glue-line constitutes this light emitting diode
One side plane of encapsulating structure.
9. according to the package structure for LED according to any one of claim 5 to 8, it is characterised in that also include that one is anti-
Penetrate layer, be configured on this photic zone.
10. according to the package structure for LED according to any one of claim 5 to 7, it is characterised in that this photic zone bag
Including one first transmittance section and one second transmittance section, this first transmittance section is positioned at this second transmittance section and this light-emitting diode chip for backlight unit
Between, and the refractive index of this first transmittance section is more than the refractive index of this second transmittance section.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610886931.5A CN106252489A (en) | 2013-05-13 | 2013-05-13 | Package structure for LED |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610886931.5A CN106252489A (en) | 2013-05-13 | 2013-05-13 | Package structure for LED |
| CN201310174294.5A CN104157769B (en) | 2013-05-13 | 2013-05-13 | Package structure for LED |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310174294.5A Division CN104157769B (en) | 2013-05-13 | 2013-05-13 | Package structure for LED |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106252489A true CN106252489A (en) | 2016-12-21 |
Family
ID=51883223
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610886931.5A Pending CN106252489A (en) | 2013-05-13 | 2013-05-13 | Package structure for LED |
| CN201310174294.5A Active CN104157769B (en) | 2013-05-13 | 2013-05-13 | Package structure for LED |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310174294.5A Active CN104157769B (en) | 2013-05-13 | 2013-05-13 | Package structure for LED |
Country Status (1)
| Country | Link |
|---|---|
| CN (2) | CN106252489A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4270500A3 (en) * | 2019-11-29 | 2024-01-24 | Nichia Corporation | Light emitting device |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI583019B (en) * | 2015-02-17 | 2017-05-11 | 新世紀光電股份有限公司 | Light emitting diode and manufacturing method thereof |
| CN107302045B (en) * | 2016-12-14 | 2018-12-14 | 厦门华联电子股份有限公司 | A kind of chip-scale LED package, packaging method and encapsulating mould |
| CN113594323A (en) * | 2020-04-30 | 2021-11-02 | 隆达电子股份有限公司 | Light emitting diode package |
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|---|---|---|---|---|
| CN201764319U (en) * | 2010-08-27 | 2011-03-16 | 柏年春 | LED (light emitting diode) surface light source and LED luminaire |
| US8164244B2 (en) * | 2010-07-22 | 2012-04-24 | Kabushiki Kaisha Toshiba | Light emitting device |
| CN102637802A (en) * | 2011-02-14 | 2012-08-15 | 斯坦雷电气株式会社 | Semiconductor light-emitting device and manufacturing method |
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| JP4932248B2 (en) * | 2005-12-21 | 2012-05-16 | Ｎｅｃライティング株式会社 | Yellow light emitting phosphor, white light emitting element using the same, and illumination device using the same |
| KR100947400B1 (en) * | 2007-12-21 | 2010-03-12 | 삼성전기주식회사 | Mold for forming a molding member and method of fabricating led package using the same |
| JP2010182809A (en) * | 2009-02-04 | 2010-08-19 | Stanley Electric Co Ltd | Semiconductor light-emitting apparatus |
| EP2605298A1 (en) * | 2010-08-09 | 2013-06-19 | Panasonic Corporation | Semiconductor light-emitting device |
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- 2013-05-13 CN CN201310174294.5A patent/CN104157769B/en active Active
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8164244B2 (en) * | 2010-07-22 | 2012-04-24 | Kabushiki Kaisha Toshiba | Light emitting device |
| CN201764319U (en) * | 2010-08-27 | 2011-03-16 | 柏年春 | LED (light emitting diode) surface light source and LED luminaire |
| CN102637802A (en) * | 2011-02-14 | 2012-08-15 | 斯坦雷电气株式会社 | Semiconductor light-emitting device and manufacturing method |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4270500A3 (en) * | 2019-11-29 | 2024-01-24 | Nichia Corporation | Light emitting device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104157769B (en) | 2017-04-05 |
| CN104157769A (en) | 2014-11-19 |
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