JP2010171101A - Method of manufacturing semiconductor apparatus, and substrate processing apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor apparatus and a substrate processing apparatus capable of growing an epitaxial film having a sufficient thickness with keeping selectivity and uniformity of film thickness in a substrate surface. <P>SOLUTION: A method at least includes: a step of carrying a substrate having at least a silicon exposure surface and an exposure surface of a silicon oxide film or a silicon nitride film on a surface into a processing chamber; a first gas supplying step of supplying a first processing gas that at least contains silicon, and a second processing gas of etching system together into the processing chamber in a state that the substrate in the processing chamber is heated to a predetermined temperature; and a second gas supplying step of supplying a third processing gas of etching system having a larger etching power than that of the second processing gas into the processing chamber. The first gas supplying step and the second gas supplying step are executed at least one or more times to selectively grow an epitaxial film on the silicon exposure surface of the substrate surface. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a semiconductor device manufacturing method and a substrate processing apparatus thereof, and more particularly, a silicon epitaxial film is selectively grown on a source / drain of a substrate used for production of a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor). The present invention relates to a method of manufacturing a semiconductor device including a process and a substrate processing apparatus thereof.

Along with higher integration and higher performance of MOSFETs, both improvement of substrate characteristics and miniaturization are required. In order to realize this coexistence, as a problem of the source / drain of MOSFET,
Reduction of leakage current and reduction in resistance are required, and one method for solving these problems is a method of selectively growing a silicon epitaxial film on the source / drain.

Conventional selective epitaxial film growth methods include two methods: a method of simultaneously supplying a film forming gas and an etching gas, and a method of alternately supplying them.

In the case where the film forming gas and the etching gas are supplied simultaneously, it is difficult to achieve both selectivity and ensuring film thickness uniformity within the substrate surface. When the selectivity is increased, the central portion of the substrate is thick and the peripheral portion is thin, so that the uniformity is significantly lowered. Further, if uniformity is ensured, there is a problem that selectivity is lowered and a film grows on the insulating film. Furthermore, since the process parameters are very large, there are problems that the process control is difficult and that the film formation rate is greatly reduced by introducing an etching gas during the film formation.

On the other hand, when the film forming gas and the etching gas are alternately supplied, there are a film forming step for performing only film forming and an etching step for performing only etching. In the film forming step, growth starts on the silicon and the insulating film. In order to advance selective growth using the time difference, there is a problem that the conditions under which selectivity can be secured are narrow. Furthermore, when removing nuclei generated on the insulating film by a gas with strong etching power, the etching amount differs depending on the etching dependency due to the difference in film quality of the polycrystalline silicon film, silicon substrate, etc. on the substrate, etching more than necessary. There was a problem that a part that would occur.

For this reason, in the conventional simultaneous supply process or alternate supply process, it is difficult to grow a sufficiently thick epitaxial film while maintaining selectivity and film thickness uniformity within the substrate surface.

Accordingly, a main object of the present invention is to provide a method of manufacturing a semiconductor device and a substrate processing apparatus capable of growing a sufficiently thick epitaxial film while maintaining selectivity and film thickness uniformity in the substrate surface. .

According to the present invention,
Carrying a substrate having at least a silicon exposed surface and an exposed surface of a silicon oxide film or a silicon nitride film on a surface thereof into a processing chamber;
A first gas supply step for supplying both a first processing gas containing at least silicon and a second processing gas of an etching system into the processing chamber in a state where the substrate in the processing chamber is heated to a predetermined temperature; ,
A second gas supply step of supplying a third processing gas of an etching system having an etching power stronger than that of the second processing gas into the processing chamber;
Of the semiconductor device, wherein the first gas supply step and the second gas supply step are performed at least once, and an epitaxial film is selectively grown on the silicon exposed surface of the substrate surface. A method is provided.

Also according to the invention,
A processing chamber for accommodating the substrate;
A heating mechanism for heating the substrate;
A gas supply unit for supplying a processing gas for forming a predetermined film in the processing chamber;
A gas exhaust unit configured to exhaust the atmosphere in the processing chamber with a predetermined pressure in the processing chamber;
At least a first pressure in the processing chamber is set to a first pressure, and the substrate in the processing chamber is heated to a first temperature, and the first processing gas containing at least silicon and a second processing gas in an etching system are processed. Supply to the room, selectively deposit on the silicon exposed surface of the substrate,
At least the processing chamber is set to a pressure higher than the first pressure, or the substrate in the processing chamber is set to a temperature higher than the first temperature, or the etching power is stronger than the second processing gas than the second processing gas. A control unit that controls the heating mechanism, the gas supply unit, and the gas exhaust unit to supply a third processing gas of an etching system and remove silicon nuclei on the silicon oxide film or the silicon nitride film; A configured substrate processing apparatus is provided.

ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method and substrate processing apparatus of a semiconductor device which can grow a sufficiently thick epitaxial film, maintaining selectivity and the film thickness uniformity in a substrate surface are provided.

<First Embodiment>
In the best mode for carrying out the present invention, as an example, the substrate processing apparatus is configured as a semiconductor manufacturing apparatus that performs processing steps in a method of manufacturing a semiconductor device (IC or the like). In the following description, a case where a vertical apparatus (hereinafter simply referred to as a processing apparatus) that performs oxidation, diffusion processing, CVD processing, or the like is applied to the substrate as the substrate processing apparatus will be described.
A preferred example of the first embodiment of the present invention will be described.
In a preferred example of the first embodiment of the present invention, a silicon substrate having a silicon nitride film or a silicon oxide film on at least a part of the surface and having an exposed silicon surface is inserted into the processing chamber, and silane is inserted into the processing chamber. Silane system or germane system by simultaneously introducing etching gas such as hydrogen gas, fluorine gas, hydrogen chloride gas etc. at the same time as the system gas (when germanium mixed crystal film is grown, also supply germane gas) A first step of selectively performing silicon epitaxial growth only on the silicon surface while suppressing the reaction of the gas in the gas phase; and an etching gas such as chlorine gas having a higher etching power than the etching gas used in the first step The second step of removing silicon atoms adhering to the silicon nitride film or silicon oxide film by introducing only Tsu carried out in order selective epitaxial growth by repeating a predetermined number of times and flop. By doing so, it is possible to grow a sufficiently thick epitaxial film while maintaining selectivity and film thickness uniformity in the substrate surface.

Here, an etching gas is used in both the film forming step as the first step and the etching step as the second step. The first step is characterized by using a gas having a weak etching power, for example, a gas such as hydrogen chloride, and can selectively form a film on the silicon surface on the substrate with good film thickness uniformity. In addition, by using a gas with a weak etching power such as hydrogen chloride, it is possible to prevent only the periphery of the substrate from being etched extremely,
In-plane film thickness uniformity can be improved. In addition, it becomes possible to reduce a difference in etching force due to film quality such as a silicon nitride film or an oxide film on the substrate surface, a polycrystalline silicon film or a single crystal film.

However, since the etching force is weak, silicon nuclei in the initial stage of silicon film formation are also generated on an insulating film such as a silicon nitride film or a silicon oxide film. In the second step, a fluorine-based gas, such as a fluorine gas, a hydrogen fluoride gas, or a trifluoride, which is a gas having a strong etching power for the purpose of removing silicon nuclei generated on the insulating film in a short flow rate and in a short time. Fluorine such as nitrogen gas, fluorine compound gas, and chlorine-based gas such as chlorine gas and chlorine trifluoride can be used to remove silicon nuclei. In addition, since etching can be performed in a short time, it is possible to reduce damage to the substrate due to heat, which deteriorates device characteristics such as impurity diffusion and shape deformation, and to improve throughput.

  Next, with reference to the drawings, a configuration of a preferable processing apparatus in the first embodiment of the present invention will be described in detail.

As shown in FIG. 1, a processing apparatus 101 of the present invention using a cassette 110 as a wafer carrier containing a wafer (substrate) 200 made of silicon or the like is used in a case 1.
11 is provided. Below the front wall 111a of the housing 111, a front maintenance port 103 serving as an opening provided for maintenance is opened, and a front maintenance door 104 for opening and closing the front maintenance port 103 is installed. Maintenance door 10
4, a cassette loading / unloading port (substrate container loading / unloading port) 112 is established so as to communicate between the inside and outside of the casing 111. The cassette loading / unloading port 112 is a front shutter (substrate container loading / unloading port opening / closing mechanism). 113 is opened and closed. Cassette loading / unloading exit 1
A cassette stage (substrate container delivery table) 114 is installed inside the 12 casings 111. The cassette 110 is carried onto the cassette stage 114 by an in-process carrying device (not shown), and is also carried out from the cassette stage 114. The cassette stage 114 is configured so that the wafer 200 in the cassette 110 is placed in a vertical posture and the wafer loading / unloading port of the cassette 110 is directed upward by the in-process transfer device.

A cassette shelf (substrate container mounting shelf) 105 is installed at a substantially lower center in the front-rear direction in the casing 111, and the cassette shelf 105 stores a plurality of cassettes 110 in a plurality of rows and a plurality of rows. The wafers 200 in the cassette 110 are arranged so that they can be taken in and out. The cassette shelf 105 is installed on a slide stage (horizontal movement mechanism) 106 so as to be capable of traversing. In addition, a buffer shelf (substrate container storage shelf) 107 is installed above the cassette shelf 105 and configured to store the cassette 110.

A cassette carrying device (substrate container carrying device) 118 is installed between the cassette stage 114 and the cassette shelf 105. The cassette transport device 118 includes a cassette elevator (substrate container lifting mechanism) 118a that can be moved up and down while holding the cassette 110, and a cassette transport mechanism (substrate container transport mechanism) 118b as a transport mechanism. The cassette 110 is transported between the cassette stage 114, the cassette shelf 105, and the buffer shelf 107 by continuous operation of the cassette 118a and the cassette transport mechanism 118b.

A wafer transfer mechanism (substrate transfer mechanism) 125 is installed behind the cassette shelf 105. The wafer transfer mechanism 125 can rotate or linearly move the wafer 200 in the horizontal direction (substrate). And a wafer transfer device elevator (substrate transfer device lifting mechanism) 125b for moving the wafer transfer device 125a up and down. As schematically shown in FIG. 1, the wafer transfer device elevator 125 b is installed at the left end of the housing 111. By the continuous operation of the wafer transfer device elevator 125b and the wafer transfer device 125a, the tweezer (substrate holder) 125 of the wafer transfer device 125a.
The wafer 200 is loaded (charged) and unloaded (discharged) with respect to the boat (substrate holder) 217 with c as a mounting portion for the wafer 200.

As shown in FIG. 1, at the rear of the buffer shelf 107, a clean unit 1 comprising a supply fan and a dustproof filter so as to supply clean air that is a cleaned atmosphere.
34 a is provided so that clean air is circulated inside the casing 111. A clean unit (not shown) composed of a supply fan and a dustproof filter is installed at the right end opposite to the wafer transfer device elevator 125b side to supply clean air. After flowing through the wafer transfer device 125a, the clean air is sucked into an exhaust device (not shown) and exhausted to the outside of the casing 111.

On the rear side of the wafer transfer device (substrate transfer device) 125a, a case (hereinafter referred to as a pressure-resistant case) 140 having a confidential performance capable of maintaining a pressure lower than atmospheric pressure (hereinafter referred to as negative pressure). Is installed, and a load lock chamber 141 that is a load lock type standby chamber having a capacity capable of accommodating the boat 217 is formed by the pressure-resistant housing 140.

A wafer loading / unloading port (substrate loading / unloading port) 142 is opened on the front wall 140a of the pressure-resistant housing 140, and the wafer loading / unloading port 142 is a gate valve (substrate loading / unloading opening / closing mechanism) 14.
3 is opened and closed. A gas supply pipe 144 for supplying an inert gas such as nitrogen gas to the load lock chamber 141 and an exhaust pipe (not shown) for exhausting the load lock chamber 141 to a negative pressure are provided on a pair of side walls of the pressure-resistant housing 140. And are connected to each other.

A processing furnace 202 is provided above the load lock chamber 141. The lower end portion of the processing furnace 202 is configured to be opened and closed by a furnace port gate valve (furnace port opening / closing mechanism) 147.

As schematically shown in FIG. 1, a boat elevator (substrate holder lifting mechanism) 115 for lifting the boat 217 is installed in the load lock chamber 141. A seal cap 219 as a lid is horizontally installed on an arm (not shown) as a connecting tool connected to the boat elevator 115, and the seal cap 219 supports the boat 217 vertically, and the lower end of the processing furnace 202 is attached to the lower end of the processing furnace 202. It is configured to be occluded.

The boat 217 includes a plurality of holding members so that a plurality of (for example, about 50 to 150) wafers 200 are horizontally held in a state where their centers are aligned in the vertical direction. It is configured.

Next, the operation of the processing apparatus according to the preferred example of the first embodiment of the present invention will be described.
As shown in FIG. 1, the cassette loading / unloading port 112 is opened by the front shutter 113 before the cassette 110 is supplied to the cassette stage 114. Thereafter, the cassette 110 is loaded from the cassette loading / unloading port 112, and the cassette stage 114 is loaded.
The wafer 200 is placed in a vertical posture and the wafer loading / unloading port of the cassette 110 faces upward.

Next, the cassette 110 is transferred to the cassette stage 114 by the cassette carrying device 118.
The wafer 200 in the cassette 110 is in a horizontal posture and the wafer loading / unloading port of the cassette 110 faces the rear of the housing in the clockwise direction 90 in the clockwise direction.
° Rotated. Subsequently, the cassette 110 is moved by the cassette transfer device 118.
After being automatically transferred to the designated shelf position of the cassette shelf 105 or the buffer shelf 107 and transferred and temporarily stored, it is transferred to the cassette shelf 105 by the cassette transfer device 118 or directly cassette It is conveyed to the shelf 105.

The slide stage 106 moves the cassette shelf 105 horizontally and positions the cassette 110 to be transferred so as to face the wafer transfer device 125a.

When the wafer loading / unloading port 142 of the load lock chamber 141 whose interior is previously set to the atmospheric pressure state is opened by the operation of the gate valve 143, the wafer 200 is removed from the cassette 110 by the tweezer 125c of the wafer transfer device 125a. Through the wafer loading / unloading port 142 and loaded into the load lock chamber 141.
And loaded (wafer charging). The wafer transfer device 125 a that has transferred the wafer 200 to the boat 217 returns to the cassette 110 and transfers the next wafer 110 to the boat 217.
To load.

When a predetermined number of wafers 200 are loaded into the boat 217, the wafer loading / unloading port 142 is closed by the gate valve 143, and the load lock chamber 141 is evacuated from the exhaust pipe to be decompressed. When the load lock chamber 141 is reduced to the same pressure as that in the processing furnace 202, the lower end portion of the processing furnace 202 is opened by the furnace port gate valve 147. Subsequently, the seal cap 219 is raised by the boat elevator 115, and the boat 217 supported by the seal cap 219 is loaded into the processing furnace 202.

After loading, arbitrary processing is performed on the wafer 200 in the processing furnace 202. After the processing, the boat 217 is pulled out by the boat elevator 115 and further, the load lock chamber 14
The gate valve 143 is opened after the inside of the zero is returned to the atmospheric pressure. After that, the wafer 200 and the cassette 110 are discharged out of the casing 111 in the reverse procedure described above.

Next, the processing furnace 202 of the processing apparatus of the preferable example in the 1st Embodiment of this invention is demonstrated.
FIG. 2 is a schematic configuration diagram of the processing furnace 202 and the periphery of the processing furnace of the processing apparatus preferably used in the first embodiment of the present invention, and is shown as a longitudinal sectional view.

As shown in FIG. 2, the processing furnace 202 has a heater 206 as a heating mechanism. The heater 206 has a cylindrical shape, and is composed of a heater wire and a heat insulating member provided around the heater wire.
It is installed vertically by being supported by a holding body (not shown).

Inside the heater 206, an outer tube 205 as a reaction tube is disposed concentrically with the heater 206. The outer tube 205 is made of a heat-resistant material such as quartz (SiO2) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end opened. A processing chamber 201 is formed in a cylindrical hollow portion inside the outer tube 205, and is configured to be able to accommodate wafers 200 as substrates in a state where they are aligned in multiple stages in a vertical posture in a horizontal posture by a boat 217 described later. Yes.

A manifold 209 is disposed below the outer tube 205 concentrically with the outer tube 205. The manifold 209 is made of, for example, stainless steel and has a cylindrical shape with an upper end and a lower end opened. The manifold 209 is provided to support the outer tube 205. An O-ring as a seal member is provided between the manifold 209 and the outer tube 205. Since the manifold 209 is supported by a holding body (not shown), the outer tube 205 is installed vertically. A reaction vessel is formed by the outer tube 205 and the manifold 209.

The manifold 209 is provided with a gas exhaust pipe 231 and a gas supply pipe 232 that passes therethrough. The gas supply pipe 232 is divided into four on the upstream side, and the first gas is supplied via valves 521, 522, 523, and 524 and MFCs (mass flow controllers) 511, 512, 513, and 514 as gas flow rate control devices. The supply source 501, the second gas supply source 502, the third gas supply source 503, and the fourth gas supply source 504 are respectively connected. MFC511, 512, 513, 514 and valves 521, 522, 523, 5
A gas flow rate control unit 235 is electrically connected to 24, and is configured to control at a desired timing so that the flow rate of the supplied gas becomes a desired flow rate. The gas supply pipe 232, valves 521, 522, 523, 524, MFCs 511, 512, 513, 514, the first gas supply source 501, the second gas supply source 502, the third gas supply source 503, the first A gas supply unit 2321 is configured by the fourth gas supply source 504. The gas supply unit is not limited to this form, and for example, a plurality of gas supply pipes 232 may be provided. In addition, for example, the valve 521, the MFC 511, and the first gas supply source 501 may be configured as the first gas supply unit by providing a gas supply pipe independently of the other valves, the MFC, and the gas supply source. Alternatively, the valve 522, the MFC 512, and the second gas supply source 502 may be configured as a second gas supply unit by providing a gas supply pipe independently of the other valves, the MFC, and the gas supply source. Alternatively, the valve 523, the MFC 513, and the third gas supply source 503 may be configured as a third gas supply unit by providing a gas supply pipe independently of the other valves, the MFC, and the gas supply source. Alternatively, the valve 524, the MFC 514, and the fourth gas supply source 504 may be configured as a fourth gas supply unit by providing a gas supply pipe independently of the other valves, the MFC, and the gas supply source.
A vacuum exhaust device 246 such as a vacuum pump is connected to the downstream side of the gas exhaust pipe 231 via a pressure sensor (not shown) as a pressure detector and an APC valve 242 as a pressure regulator. A pressure control unit 236 is electrically connected to the pressure sensor and the APC valve 242, and the pressure control unit 236 adjusts the opening degree of the APC valve 242 based on the pressure detected by the pressure sensor. Control is performed at a desired timing so that the pressure in the processing chamber 201 becomes a desired pressure. The gas exhaust pipe 231, the pressure sensor, the APC valve 242, and the vacuum exhaust device 246 constitute a gas exhaust unit 2311 that exhausts the atmosphere in the process chamber 201 with a predetermined pressure in the process chamber 201.

Below the manifold 209, a seal cap 219 is provided as a furnace port lid for hermetically closing the lower end opening of the manifold 209. The seal cap 219 is
For example, it is made of a metal such as stainless steel and is formed in a disk shape. On the upper surface of the seal cap 219, an O-ring as a seal member that comes into contact with the lower end of the manifold 209 is provided. The seal cap 219 is provided with a rotation mechanism 254. Rotating mechanism 254
The rotation shaft 255 passes through the seal cap 219 and is connected to a boat 217 described later, and is configured to rotate the wafer 200 by rotating the boat 217.
The seal cap 219 is configured to be moved up and down in a vertical direction by a lifting motor 248 described later as a lifting mechanism provided on the outside of the processing furnace 202, and thereby the boat 217 is carried into and out of the processing chamber 201. It is possible. A drive control unit 237 is electrically connected to the rotation mechanism 254 and the lift motor 248, and is configured to control at a desired timing so as to perform a desired operation.

The boat 217 as a substrate holder is made of a heat-resistant material such as quartz or silicon carbide,
The plurality of wafers 200 are arranged in a horizontal posture and aligned in the center with each other, and are held in multiple stages. In addition, a plurality of heat insulating plates 216 serving as a disk-shaped heat insulating member made of a heat resistant material such as quartz or silicon carbide are arranged in a plurality of stages in a horizontal posture at the lower portion of the boat 217. Heat is configured not to be transmitted to the manifold 209 side.

In the vicinity of the heater 206, a temperature sensor (not shown) is provided as a temperature detector for detecting the temperature in the processing chamber 201. The heater 206 and the temperature sensor are electrically connected to the temperature controller 2.
38 is connected, and it is controlled at a desired timing so that the temperature in the processing chamber 201 becomes a desired temperature distribution by adjusting the power supply to the heater 206 based on the temperature information detected by the temperature sensor. It is configured.

In the configuration of the processing furnace 202, the first processing gas is supplied from the first gas supply source 501, and after the flow rate is adjusted by the MFC 511, the gas supply pipe 2 is connected via the valve 521.
32 is introduced into the processing chamber 201.
The second processing gas is supplied from the second gas supply source 502, the flow rate of which is adjusted by the MFC 512, and then introduced into the processing chamber 201 through the valve 522 through the gas supply pipe 232.
The third processing gas is supplied from the third gas supply source 503, the flow rate of which is adjusted by the MFC 513, and then introduced into the processing chamber 201 through the valve 523 through the gas supply pipe 232.
The fourth processing gas is supplied from the fourth gas supply source 504, the flow rate of which is adjusted by the MFC 514, and then introduced into the processing chamber 201 through the valve 524 through the gas supply pipe 232.
The gas in the processing chamber 201 is supplied from a vacuum pump 2 as an exhaust device connected to a gas exhaust pipe 231.
46 is exhausted from the processing chamber 201.

  Next, the configuration around the processing furnace of the processing apparatus used in the first embodiment of the present invention will be described.

A lower substrate 245 is provided on the outer surface of the load lock chamber 140 as a spare chamber. Lower substrate 24
5 is provided with a guide shaft 264 fitted to the lifting platform 249 and a ball screw 244 threadedly engaged with the lifting platform 249. The upper substrate 247 is provided on the upper ends of the guide shaft 264 and the ball screw 244 that are erected on the lower substrate 245. The ball screw 244 is rotated by an elevating motor 248 provided on the upper substrate 247. As the ball screw 244 rotates, the lifting platform 2
49 is configured to move up and down.

A hollow elevating shaft 250 is vertically suspended from the elevating table 249, and a connecting portion between the elevating table 249 and the elevating shaft 250 is airtight. The elevating shaft 250 moves up and down together with the elevating table 249. The lifting shaft 250 penetrates the top plate 251 of the load lock chamber 140. The through hole of the top plate 251 through which the elevating shaft 250 penetrates has a sufficient margin so as not to contact the elevating shaft 250. Bellows 265 as a hollow stretchable body having elasticity so as to cover the periphery of the lifting shaft 250 between the load lock chamber 140 and the lifting platform 249.
Is provided to keep the load lock chamber 140 airtight. Bellows 265 is a lifting platform 249.
The bellows 265 has an inner diameter that is sufficient for the amount of lifting and lowering of the lifting shaft 250.
The bellows 265 is configured not to come into contact with the expansion / contraction of the bellows 265.

A lifting substrate 252 is fixed horizontally to the lower end of the lifting shaft 250. A drive unit cover 253 is airtightly attached to the lower surface of the elevating substrate 252 via a seal member such as an O-ring. The elevating board 252 and the drive unit cover 253 constitute a drive unit storage case 256. With this configuration, the inside of the drive unit storage case 256 is isolated from the atmosphere in the load lock chamber 140.

In addition, a rotation mechanism 254 of the boat 217 is provided inside the drive unit storage case 256,
The periphery of the rotation mechanism 254 is cooled by the cooling mechanism 257.

The power supply cable 258 is led from the upper end of the lifting shaft 250 through the hollow portion of the lifting shaft 250 to the rotating mechanism 254 and connected thereto. The cooling mechanism 257 and the seal cap 219 are provided with a cooling flow path 259, and a cooling water pipe 260 for supplying cooling water is connected to the cooling flow path 259. It passes through the hollow part.

As the elevating motor 248 is driven and the ball screw 244 rotates, the drive unit storage case 256 is raised and lowered via the elevating platform 249 and the elevating shaft 250.

As the drive unit storage case 256 rises, the seal cap 219 provided in an airtight manner on the elevating substrate 252 closes the furnace port 161, which is an opening of the process furnace 202, and enables wafer processing. When the drive unit storage case 256 is lowered, the seal cap 219 is moved.
At the same time, the boat 217 is lowered and the wafer 200 can be unloaded.

The gas flow rate control unit 235, the pressure control unit 236, the drive control unit 237, and the temperature control unit 238 are
An operation unit and an input / output unit are also configured, and are electrically connected to a main control unit 239 that controls the entire substrate processing apparatus. These gas flow control unit 235, pressure control unit 236, drive control unit 237,
The temperature control unit 238 and the main control unit 239 are configured as a controller 240.

Next, a method for forming an Epi-Si film on a substrate such as the wafer 200 using the processing furnace 202 having the above configuration as a step of the substrate manufacturing process will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 240.

When a plurality of wafers 200 are loaded into the boat 217, as shown in FIG. 2, the boat 217 holding the plurality of wafers 200 is processed by the lifting and lowering operations of the lifting platform 249 and the lifting shaft 250 by the lifting motor 248. It is carried into the chamber 201 (boat loading). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring.

The processing chamber 201 is evacuated by a vacuum evacuation device 246 so that a desired pressure (degree of vacuum) is obtained. At this time, the pressure in the processing chamber 201 is measured by a pressure sensor, and the pressure regulator 242 is feedback-controlled based on the measured pressure. Further, the processing chamber 201 is heated by the heater 206 so as to have a desired temperature. At this time, the power supply to the heater 206 is feedback-controlled based on the temperature information detected by the temperature sensor so that the inside of the processing chamber 201 has a desired temperature distribution. Subsequently, the wafer 200 is rotated by rotating the boat 217 by the rotation mechanism 254.

In the first gas supply source 501, the second gas supply source 502, the third gas supply source 503, and the fourth gas supply source 504, silane-based gas as the first process gas or Halogen-containing gas, for example, dichlorosilane gas (SiH 2 Cl 2), hydrogen chloride gas (HCl) as the second processing gas, chlorine gas (Cl 2) as the third processing gas, and hydrogen gas as the fourth processing gas (H2) is enclosed, and then each processing gas is supplied from these processing gas supply sources. After the opening degrees of the MFCs 511, 512, 513, and 514 are adjusted so as to obtain a desired flow rate, the valves 521, 522, 523, and 524 are opened, and each processing gas flows through the gas supply pipe 232, and processing It is introduced into the processing chamber 201 from the upper part of the chamber 201.
The introduced gas passes through the processing chamber 201 and is exhausted from the gas exhaust pipe 231. The processing gas comes into contact with the wafer 200 when passing through the processing chamber 201, and Ep on the surface of the wafer 200.
The i-Si film is selectively epitaxially grown.

When a preset time elapses, an inert gas is supplied from an inert gas supply source (not shown), the inside of the processing chamber 201 is replaced with the inert gas, and the pressure in the processing chamber 201 is returned to normal pressure. The

After that, the seal cap 219 is lowered by the lifting motor 248 and the manifold 20
9 is opened, and the processed wafer 200 is carried out from the lower end of the manifold 209 to the outside of the outer tube 205 (boat unloading) while being held by the boat 217. Thereafter, the processed wafer 200 is taken out from the boat 217 (wafer discharge).

  Next, substrate processing in a preferred example of the first embodiment of the present invention will be described with reference to the process sequence diagram of FIG.

  In a preferred example of the first embodiment of the present invention, a silicon wafer 200 having a silicon nitride film or a silicon oxide film on at least a part of its surface and having an exposed silicon surface is inserted into the processing chamber 201 (step). 301).

Next, the temperature of the wafer 200 is set to a predetermined temperature within a range of 650 to 800 ° C. (650 ° C. or more and 800 ° C. or less) (step 302).

Next, in the film forming step as the first step, dichlorosilane gas as a film forming gas and hydrogen chloride gas as an etching gas are simultaneously introduced into the processing chamber 201 and irradiated onto the wafer 200 (step 303). At this time, the pressure in the processing chamber 201 is 100 Pa or more and less than atmospheric pressure, the dichlorosilane gas flow rate is 1 to 300 sccm (1 sccm to 300 sccm), the hydrogen chloride gas flow rate is 1 to 300 sccm (1 sccm to 300 sccm), and the hydrogen gas flow rate is 1. It is preferable to be ˜20,000 sccm (1 sccm or more and 20000 sccm or less). In the film forming step, by supplying these gases from the same nozzle, gas supply is performed so that only the film forming gas and only the etching gas are prevented from reacting and selective growth can be performed.

Next, in the etching step as the second step, a chlorine gas having an etching power stronger than the etching gas used in the film forming step is introduced into the processing chamber 201 as an etching gas, and is irradiated onto the wafer 200 (step 304). . At this time, the temperature is the same as that in the first step, but the pressure in the processing chamber 201 is under a low pressure of about 1 Pa to 50 Pa, and the etching gas reaches not only the periphery of the substrate but also the center of the substrate and reacts. It is preferable if possible. The chlorine gas flow rate is preferably 1 to 100 sccm (1 sccm to 100 sccm). Further, in the second step, hydrogen gas is supplied at a flow rate of 10 to 5000 sccm (10 sccm to 5000 sccm), preferably 100 sc
It is preferable to flow about 0 to 3000 sccm (1000 sccm to 3000 sccm).

Next, in order to remove chlorine remaining on the substrate surface, a purge step of supplying, for example, hydrogen gas as a reducing gas is performed (step 305).

A silicon film is selectively epitaxially grown by sequentially performing a film forming step, an etching step, and a purge step. Further, the film forming step, the etching step, and the purge step may be repeated a predetermined number of times in order.

As in step 303, by introducing dichlorosilane gas and hydrogen chloride gas simultaneously, silicon epitaxial growth is selectively performed only on the silicon surface while suppressing the reaction of dichlorosilane gas in the gas phase.

Further, as in step 304, the silicon nuclei attached on the silicon nitride film or silicon oxide film are removed by introducing only the etching gas.

Further, as in step 305, chlorine remaining on the substrate surface is removed by introducing a reducing gas.

Thus, by repeating or performing Step 303, Step 304, and Step 305 one or more times, a sufficiently thick epitaxial film can be grown while maintaining selectivity and film thickness uniformity within the substrate surface. .

In step 303 and step 304, hydrogen gas as a carrier gas is 10 to 10.
50000 sccm (10 sccm or more and 5000 sccm or less), and nitrogen gas as a carrier gas is preferably flowed from 1 to 30000 sccm (1 sccm or more and 30000 sccm or less). Hydrogen gas and nitrogen gas as carrier gases are flowed simultaneously with the film forming gas and the etching gas. In the case of flowing nitrogen gas, another gas supply line including a nitrogen gas supply source, an MFC and a valve is added.

After step 303 and step 304 are repeated a predetermined number of times to selectively grow a desired epitaxial film, the gas is stopped and the processing chamber 201 is exhausted.

  Thereafter, the wafer 200 is unloaded from the processing chamber 201 (step 305).

According to the present embodiment, one or more of the following effects can be achieved.
(1) A silicon substrate having a silicon nitride film or a silicon oxide film on at least a part of the surface and having the silicon surface exposed is inserted into the processing chamber, and a silane-based gas (SiGe mixed crystal film is grown in the processing chamber) In this case, a germane gas is also supplied.) Simultaneously, an etching gas such as hydrogen gas, fluorine gas, or hydrogen chloride gas is simultaneously introduced to suppress the reaction of the silane or germane gas in the gas phase. A film forming step for selectively performing silicon epitaxial growth only on the silicon surface, and an etching gas such as chlorine gas having a higher etching power than the etching gas used in the film forming step is introduced on the silicon nitride film or silicon oxide film. And performing an etching step for removing attached silicon atoms at least once in order. Performing a selective epitaxial growth. By doing so, it is possible to grow a sufficiently thick epitaxial film while maintaining selectivity and film thickness uniformity in the substrate surface.
(2) By using a gas having a weak etching power in the film forming step, it becomes possible to selectively form a film on the silicon surface on the substrate with good film thickness uniformity. Further, by using a gas having a weak etching power, it is possible to prevent only the peripheral portion of the substrate from being etched extremely, and to improve the in-plane film thickness uniformity. In addition, it becomes possible to reduce a difference in etching force due to film quality such as a silicon nitride film or an oxide film on the substrate surface, a polycrystalline silicon film or a single crystal film.
In addition, since the etching power is weak in the film formation step, silicon atoms and silicon nuclei in the initial stage of silicon film formation are generated on the insulating film such as a silicon nitride film and a silicon oxide film. For the purpose of removing silicon nuclei generated on the insulating film in a small flow rate and in a short time, it becomes possible to remove silicon atoms and silicon nuclei with a gas having a stronger etching power than the film forming step. In addition, etching can be performed at a low temperature in a short time, and damage to the substrate due to heat that deteriorates device characteristics such as impurity diffusion and shape deformation can be reduced, and throughput can be improved.

<Second Embodiment>
A second embodiment will be described.
The second embodiment is different from the first embodiment in a process sequence in substrate processing. Specifically, in the etching step (step 304) which is mainly the second step, a gas having a higher etching power than the etching gas used in the film formation step, for example, chlorine gas, is used as the etching gas in the processing chamber 201. The amount of gas supplied when the wafer 200 is introduced and irradiated and the pressure condition in the processing chamber 201 are different from those in the first embodiment. Other process sequences, processing apparatuses, and processing furnace configurations and operations are the same as those in the first embodiment.

In this embodiment, in the film forming step (303) which is the first step in the first embodiment, dichlorosilane gas as a film forming gas and hydrogen chloride gas as an etching gas are simultaneously introduced into the processing chamber 201. Irradiate the wafer 200. At this time, as shown in Table 1 below, the pressure in the processing chamber 201 is 50 Pa or more and less than atmospheric pressure, and the hydrogen chloride gas flow rate is 1 sccm or more and 300 sccm or less. The dichlorosilane gas flow rate is preferably 1 sccm to 500 sccm, and the hydrogen gas flow rate is preferably 1 sccm to 20000 sccm.
Further, in the etching step (step 304) as the second step, as shown in Table 1 below, when the wafer 200 is irradiated after being introduced into the processing chamber 201, the film forming step as the first step is used as an etching gas. The supply amount of chlorine gas as a gas having an etching power stronger than the etching gas used in 1 is set to 1 sccm or more and 300 sccm or less. Further, the pressure in the processing chamber 201 at this time is set to 50 Pa or more and less than atmospheric pressure.
That is, the film forming step and the etching step are performed in the same manner as the pressure condition in the processing chamber 201 and the etching gas supply amount condition.

  According to this embodiment, in addition to the effect similar to the effect described in the first embodiment, the pressure fluctuation in the processing chamber 201 can be suppressed, so that the throughput is improved and the reproducibility is higher. There is an effect that processing on the wafer 200 can be realized.

<Third Embodiment>
A third embodiment will be described.
The third embodiment is different from the first embodiment in a process sequence in substrate processing. Specifically, in the etching step (step 304) which is mainly the second step, a gas having a higher etching power than the etching gas used in the film formation step, for example, chlorine gas, is used as the etching gas in the processing chamber 201. The amount of gas supplied when the wafer 200 is introduced and irradiated and the pressure condition in the processing chamber 201 are different from those in the first embodiment. Other process sequences, processing apparatuses, and processing furnace configurations and operations are the same as those in the first embodiment.

In this embodiment, in the film forming step (303) which is the first step in the first embodiment, dichlorosilane gas as a film forming gas and hydrogen chloride gas as an etching gas are simultaneously introduced into the processing chamber 201. Irradiate the wafer 200. At this time, as shown in Table 2 below, the pressure in the processing chamber 201 is 50 Pa or more and less than atmospheric pressure, and the hydrogen chloride gas flow rate is 1 sccm or more and 300 sccm or less. The dichlorosilane gas flow rate is preferably 1 sccm to 500 sccm, and the hydrogen gas flow rate is preferably 1 sccm to 20000 sccm.
Further, in the etching step (step 304) as the second step, as shown in Table 2 below, when the wafer 200 is irradiated after being introduced into the processing chamber 201, the film forming step as the first step is used as an etching gas. The pressure in the processing chamber 201 when supplying chlorine gas as a gas having an etching power stronger than the etching gas used in step 1 is set to 1 Pa or more and 20 Pa or less.
That is, the pressure in the processing chamber 201 in the etching step is made lower than that in the film forming step.

  According to the present embodiment, in addition to the same effects as those described in the first embodiment, the etching gas can reach and react not only at the peripheral portion of the substrate but also at the central portion of the substrate. As a whole, silicon atoms remaining in the film forming step, silicon nuclei, and the like can be etched, and the substrate surface can be etched uniformly.

<Fourth Embodiment>
A fourth embodiment will be described.
The fourth embodiment is different from the first embodiment in a process sequence in substrate processing. Specifically, mainly in the film forming step (step 303) which is the first step, the temperature in the processing chamber 201, particularly the temperature condition of the wafer 200, and the etching step (step 304) which is the second step are etched. As the gas, a gas having a higher etching power than the etching gas used in the film formation step, for example, chlorine gas, is introduced into the processing chamber 201 and irradiated onto the wafer 200, particularly the temperature in the wafer 200. The temperature condition is different from that of the first embodiment. Other process sequences, processing apparatuses, and processing furnace configurations and operations are the same as those in the first embodiment.

In this embodiment, in the film forming step (303) which is the first step in the first embodiment, dichlorosilane gas as a film forming gas and hydrogen chloride gas as an etching gas are simultaneously introduced into the processing chamber 201. Irradiate the wafer 200. At this time, as shown in Table 3 below, the pressure in the processing chamber 201 is 50 Pa or more and less than atmospheric pressure, and the hydrogen chloride gas flow rate is 1 sccm or more and 300 sccm or less. As shown in Table 3 below, the temperature in the processing chamber 201 is set to 650 ° C. or higher and 800 ° C. or lower. The dichlorosilane gas flow rate is preferably 1 sccm or more and 500 sccm or less, and the hydrogen gas flow rate is preferably 1 sccm or more and 20000 sccm or less.
Further, in the etching step (step 304) as the second step, as shown in Table 3 below, when the wafer 200 is irradiated by being introduced into the processing chamber 201, the film forming step as the first step is used as an etching gas. The temperature in the processing chamber 201 when supplying chlorine gas as a gas having a higher etching power than the etching gas used in the above, particularly the temperature of the wafer 200, is higher than the film forming step and higher than 650 ° C. and 800 Temporarily raise the temperature to below ℃. For example, when the temperature in the processing chamber 201 in the film formation step is 650 ° C., the temperature is temporarily raised to 800 ° C. in the etching step. Thereby, the etching power can be further increased in the etching step. More preferably, the temperature of the processing chamber 201 in the etching step is the same as that in the film forming step when the film forming step shifts to the etching step, and then the temperature is once raised and then lowered. Before the etching step is completed, the temperature may be returned again to the same temperature as the film forming step. For example, when the temperature in the processing chamber 201 in the film forming step is 650 ° C., when the process proceeds from the film forming step to the etching step, the temperature in the processing chamber 201 is maintained at 650 ° C., and then once is 800 ° C. The temperature is then lowered to 650 ° C., which is the same temperature as the film forming step, before the etching step is completed. Thus, etching can be performed even when the temperature is raised or lowered, and the etching time can be further shortened.
Note that the temperature in the processing chamber 201 is not temporarily increased during the etching step, that is, the temperature in the processing chamber 201 is not changed during the etching step, and is set higher than the film formation step from the beginning of the etching step. A method of performing etching at a constant temperature is also effective.

  According to this embodiment, in addition to the effect similar to the effect described in the first embodiment, the etching power in the etching step can be further increased, and there is an effect that the throughput and the like are further improved. This is particularly effective when a film is formed on a semiconductor substrate in which damage to the substrate due to heat that deteriorates device characteristics such as impurity diffusion and shape deformation is not a problem.

<Fifth Embodiment>
A fifth embodiment will be described.
The fifth embodiment is different from the first embodiment in a process sequence in substrate processing. Specifically, mainly in the film forming step (step 303) which is the first step, the pressure condition in the processing chamber 201 and in the etching step (step 304) which is the second step, the film forming step is used as an etching gas. The pressure conditions in the processing chamber 201 when the wafer is irradiated with the etching gas, for example, hydrogen chloride gas as used in the above, are introduced into the processing chamber 201 to be different from those in the first embodiment. Other process sequences, processing apparatuses, and processing furnace configurations and operations are the same as those in the first embodiment.

In this embodiment, in the film forming step (303) which is the first step in the first embodiment, dichlorosilane gas as a film forming gas and hydrogen chloride gas as an etching gas are simultaneously introduced into the processing chamber 201. Irradiate the wafer 200. At this time, as shown in Table 4 below, the pressure in the processing chamber 201 is 1 Pa to 100 Pa, and the hydrogen chloride gas flow rate is 1 sccm to 300 sccm. As shown in Table 4 below, the temperature in the processing chamber 201 is set to 650 ° C. or higher and 800 ° C. or lower. The dichlorosilane gas flow rate is preferably 1 sccm or more and 500 sccm or less, and the hydrogen gas flow rate is preferably 1 sccm or more and 20000 sccm or less.
Further, in the etching step (step 304) as the second step, as shown in Table 4 below, when the wafer 200 is introduced into the processing chamber 201 and irradiated onto the wafer 200, the film forming step as the first step is used as an etching gas. The etching gas used in step 1, for example, hydrogen chloride gas is used as it is. In the etching step, the pressure in the processing chamber 201 when supplying the etching gas is temporarily set higher than the pressure in the processing chamber 201 in the film forming step. For example, the pressure in the processing chamber 201 in the etching step is temporarily increased to 500 Pa or more and 1000 Pa or less. Thereby, the etching power can be increased in the etching step.
More preferably, the pressure in the processing chamber 201 in the etching step is the same as that in the film forming step when the film forming step is shifted to the etching step, and then is once increased and then reduced in pressure. It is preferable that the pressure is returned to the same pressure as the film forming step before the step is completed. For example, when the pressure in the processing chamber 201 in the film forming step is 100 Pa, when the process proceeds from the film forming step to the etching step, the pressure in the processing chamber 201 is maintained at 100 Pa, and then the pressure is once increased to 1000 Pa. Thereafter, the pressure is reduced, and the pressure is returned to 100 Pa, which is the same pressure as the film forming step, before the etching step is completed. As a result, etching can be performed even when the pressure is raised or lowered, and the etching time can be further shortened.
In addition, without temporarily increasing the pressure in the processing chamber 201 during the etching step, that is, without changing the pressure in the processing chamber 201 during the etching step, the pressure is higher than the film forming step from the beginning of the etching step, A method of performing etching at a constant pressure is also effective.

According to the present embodiment, one or more of the following effects can be achieved.
(1) A silicon substrate having a silicon nitride film or a silicon oxide film on at least a part of the surface and having the silicon surface exposed is inserted into the processing chamber, and a silane-based gas (SiGe mixed crystal film is grown in the processing chamber) In this case, a germane gas is also supplied.) Simultaneously, an etching gas such as hydrogen gas, fluorine gas, or hydrogen chloride gas is simultaneously introduced to suppress the reaction of the silane or germane gas in the gas phase. While forming the silicon epitaxial film selectively on the silicon surface, the pressure in the processing chamber is set higher than the film forming step, and the etching gas used in the film forming step is introduced to introduce a silicon nitride film or silicon oxide. An etching step for removing silicon atoms adhering to the film at least once in order. Perform-option epitaxial growth. By doing so, it is possible to grow a sufficiently thick epitaxial film while maintaining selectivity and film thickness uniformity in the substrate surface.
(2) By using a gas having a weak etching power in the film forming step, it becomes possible to selectively form a film on the silicon surface on the substrate with good film thickness uniformity. Further, by using a gas having a weak etching power, it is possible to prevent only the peripheral portion of the substrate from being etched extremely, and to improve the in-plane film thickness uniformity. In addition, it becomes possible to reduce a difference in etching force due to film quality such as a silicon nitride film or an oxide film on the substrate surface, a polycrystalline silicon film or a single crystal film.
In addition, since the etching force is weak in the film formation step, silicon nuclei in the initial stage of silicon film formation are also generated on the insulating film such as the silicon nitride film and the silicon oxide film. For the purpose of removing silicon nuclei generated on the insulating film at a low flow rate and in a short time, the same etching gas as that used in the film formation step is used, and the pressure in the processing chamber is set higher than that in the film formation step so that silicon atoms and silicon can be removed. It becomes possible to remove nuclei. In addition, etching can be performed at a low temperature in a short time, and damage to the substrate due to heat that deteriorates device characteristics such as impurity diffusion and shape deformation can be reduced, and throughput can be improved.

<Sixth Embodiment>
A sixth embodiment will be described.
The sixth embodiment is different from the first embodiment in a process sequence in substrate processing. Specifically, mainly in the etching step (step 304), which is the second step, the etching gas used in the film formation step, for example, hydrogen chloride gas, is used as it is and is introduced into the processing chamber 201. The amount of etching gas supplied into the processing chamber 201 when irradiating the wafer 200 is different from that of the first embodiment. Other process sequences, processing apparatuses, and processing furnace configurations and operations are the same as those in the first embodiment.

In this embodiment, in the film forming step (303) which is the first step in the first embodiment, dichlorosilane gas as a film forming gas and hydrogen chloride gas as an etching gas are simultaneously introduced into the processing chamber 201. Irradiate the wafer 200. At this time, as shown in Table 5 below, the pressure in the processing chamber 201 is 50 Pa or more and less than atmospheric pressure, and the hydrogen chloride gas flow rate is 1 sccm or more and 300 sccm or less. The dichlorosilane gas flow rate is preferably 1 sccm to 500 sccm, and the hydrogen gas flow rate is preferably 1 sccm to 20000 sccm. Further, in the etching step (step 304) as the second step, when the wafer 200 is irradiated into the processing chamber 201 as shown in Table 5 below, the film forming step as the first step is used as an etching gas. The etching gas used in step 1, for example, hydrogen chloride gas is used as it is. In the etching step, the gas supply amount when supplying the etching gas is set larger than the gas supply amount in the film forming step. For example, the supply amount of the etching gas in the processing chamber 201 in the etching step is set to 5000 SCCM or more and 10,000 SCCM or less. Thereby, the etching power can be increased in the etching step.

According to the present embodiment, one or more of the following effects can be achieved.
(1) A silicon substrate having a silicon nitride film or a silicon oxide film on at least a part of the surface and having the silicon surface exposed is inserted into the processing chamber, and a silane-based gas (SiGe mixed crystal film is grown in the processing chamber) In this case, a germane gas is also supplied.) Simultaneously, an etching gas such as hydrogen gas, fluorine gas, or hydrogen chloride gas is simultaneously introduced to suppress the reaction of the silane or germane gas in the gas phase. While the film formation step selectively epitaxially grows only on the silicon surface, and the etching gas used in the film formation step is introduced more into the processing chamber than the film formation step, the silicon nitride film or An etching step for removing silicon atoms adhering to the silicon oxide film is sequentially performed at least once. Performing a selective epitaxial growth by the. By doing so, it is possible to grow a sufficiently thick epitaxial film while maintaining selectivity and film thickness uniformity within the substrate surface.
(2) By using a gas with weak etching power in the film forming step, it is possible to selectively form a film on the silicon surface on the substrate with good film thickness uniformity. Further, by using a gas having a weak etching power, it is possible to prevent only the peripheral portion of the substrate from being etched extremely, and to improve the in-plane film thickness uniformity. In addition, it becomes possible to reduce a difference in etching force due to film quality such as a silicon nitride film or oxide film on the substrate surface, a polycrystalline silicon film or a single crystal film.
In addition, since the etching force is weak in the film formation step, silicon nuclei in the initial stage of silicon film formation are also generated on the insulating film such as the silicon nitride film and the silicon oxide film. To remove silicon nuclei generated on the insulating film at a low flow rate and in a short time, use the same etching gas as the film forming step, and increase the amount of etching gas supplied into the processing chamber than the film forming step. This makes it possible to remove silicon atoms and silicon nuclei. In addition, etching can be performed at a low temperature in a short time, and damage to the substrate due to heat that deteriorates device characteristics such as impurity diffusion and shape deformation can be reduced, and throughput can be improved.

<Seventh embodiment>
A seventh embodiment will be described.
The seventh embodiment differs from the first embodiment in a process sequence in substrate processing. Specifically, mainly in the etching step (step 304) which is the second step, the film forming gas and the reducing gas introduced in the film forming step which is the first step are continuously introduced into the processing chamber 201, and The second embodiment is different from the first embodiment in that a gas having a stronger etching power than the etching gas used in the film forming step, for example, chlorine gas, is introduced into the processing chamber 201. Other process sequences, processing apparatuses, and processing furnace configurations and operations are the same as those in the first embodiment.

In this embodiment, as shown in Table 6 below, in the film forming step (303) as the first step, dichlorosilane gas as a film forming gas and hydrogen chloride gas as an etching gas are simultaneously introduced into the processing chamber 201. Then, the wafer 200 is irradiated. At this time, as shown in Table 6 below, the wafer 200 temperature is set to 650 ° C. to 800 ° C., the pressure in the processing chamber 201 is set to 50 Pa to less than atmospheric pressure, and the hydrogen chloride gas flow rate is set to 1 sccm to 300 sccm. The dichlorosilane gas flow rate is preferably 1 sccm to 500 sccm, and the hydrogen gas flow rate is preferably 1 sccm to 20000 sccm. Under these conditions, the film forming step is performed as the strong film forming step. Further, in the weak film formation step as the etching step (step 304) after step 303, an etching gas used in the film formation step, for example, a gas having higher etching power than hydrogen chloride gas is used. For example, chlorine gas is supplied into the processing chamber 201 at 1 sccm or more and 300 sccm or less, and other processing conditions are the same as the film forming step (wafer temperature 650 ° C. or more and 800 ° C. or less, pressure in the processing chamber 201 is 50 Pa or more and atmospheric pressure. Dichlorosilane gas flow rate of 1 sccm to 500 sccm, hydrogen gas flow rate of 1 sccm to 20000 sccm). That is, the weak film formation step in which the etching power is stronger than the film formation step 303 is performed by using a stronger etching gas than the strong film formation step.

  According to the present embodiment, in addition to the same effects as those described in the first embodiment, since the film forming gas is supplied into the processing chamber also in the etching step, the film forming speed can be improved. There is an effect that the throughput can be improved.

<Eighth Embodiment>
An eighth embodiment will be described.
The eighth embodiment is different from the first embodiment in a process sequence in substrate processing. Specifically, mainly in the etching step (step 304), which is the second step, the film forming gas, the reducing gas, and the etching gas introduced in the film forming step, which is the first step, are continuously introduced into the processing chamber 201 as they are. In addition, the temperature in the processing chamber 201, particularly the temperature of the wafer 200, is different from that of the first embodiment in that the temperature is lower than the temperature at the time of the film forming step and lower than the thermal decomposition temperature of the film forming gas. Yes. Other process sequences, processing apparatuses, and processing furnace configurations and operations are the same as those in the first embodiment.

In this embodiment, as shown in Table 7 below, in the film forming step (303) as the first step, dichlorosilane gas as a film forming gas and hydrogen chloride gas as an etching gas are simultaneously introduced into the processing chamber 201. Then, the wafer 200 is irradiated. At this time, as shown in Table 7 below, the wafer 200 temperature is set to 650 ° C. to 800 ° C., the pressure in the processing chamber 201 is set to 50 Pa to less than atmospheric pressure, and the hydrogen chloride gas flow rate is set to 1 sccm to 300 sccm. The dichlorosilane gas flow rate is preferably 1 sccm to 500 sccm, and the hydrogen gas flow rate is preferably 1 sccm to 20000 sccm. Under these conditions, the film forming step is performed as the strong film forming step. In the etching step (step 304) after step 303, the temperature in the processing chamber 201 is set to a temperature lower than the temperature in the processing chamber 201 in the film forming step and lower than the thermal decomposition temperature of the film forming gas. . For example, in the etching step, the temperature in the processing chamber 201, particularly the temperature of the wafer 200, is set to a temperature at which thermal decomposition of dichlorosilane gas of about 500 ° C. to 600 ° C. is difficult to proceed. In addition, an etching gas used in the film formation step, for example, a gas having higher etching power than hydrogen chloride gas is used. For example, chlorine gas is supplied into the processing chamber 201 at 1 sccm or more and 300 sccm or less, and other processing conditions are the same as the film forming step (pressure in the processing chamber 201 is less than atmospheric pressure and less than atmospheric pressure, dichlorosilane gas flow rate is 1 sccm or more and 500 sccm. Hereinafter, the hydrogen gas flow rate is 1 sccm or more and 20000 sccm or less). That is, even if a strong etching gas is used rather than the strong film forming step, an etching step having an etching power stronger than that of the film forming step 303 is performed, and even if the film forming gas flows during the etching step, the wafer 200 The film is prevented from being deposited.

  According to this embodiment, in addition to the effect similar to the effect described in the first embodiment, there is an effect that the film forming step can be changed to the etching step without changing the conditions other than the temperature.

<Other embodiments>
In addition to the first to eighth embodiments described above, various modifications are possible.
For example, in the first to fourth embodiments and the seventh embodiment described above, since the type of etching gas is different between the film forming step 303 and the etching step 304, the film forming step 303 and the etching step 304 are performed. A purge step may be provided as a step of supplying a reducing gas such as hydrogen gas into the processing chamber 201 without supplying the etching gas and the film forming gas into the processing chamber 201. More preferably, a step of evacuating the processing chamber 201 between the film forming step 303 and the etching step 304 and removing all residual gas in the processing chamber 201 in the film forming step may be provided. By adding these purge steps, even if the gas type is changed in the film formation step and the etching step, problems such as contamination with residual gas during the film formation step in the gas supply pipe can be suppressed. Supply from the same gas supply port can be performed under better conditions.

In the above-described embodiment, the standby chamber is described as an example in which a load-lock chamber that can be vacuum-replaced is applied in the above-described embodiment. When performing, it may replace with the load lock chamber which can be vacuum-replaced, and you may comprise so that it may clean without vacuum replacement comprised by nitrogen gas atmosphere or clean air atmosphere. In that case, the housing may be simply a housing instead of a pressure housing.

Further, in the above-described embodiment, the embodiment in which the plasma generation apparatus is not installed in the gas supply unit and the processing chamber has been described. However, the present invention is not limited to this. For example, in the gas supply unit and the processing chamber. You may comprise so that it may implement in a plasma state by providing a plasma generator.

In the above-described embodiment, the gas supply pipe 232 is divided into four on the upstream side in the gas supply system to the processing chamber, and the valves 521, 522, 523, and 524 and the MFC as the gas flow rate control device. (Mass flow controllers) 511, 512, 513, and 514 are connected to the first gas supply source 501, the second gas supply source 502, the third gas supply source 503, and the fourth gas supply source 504, respectively. As described above, the gas supply pipe 232 may be provided independently as a separate body for each of different gas types, such as a film forming gas, an inert gas, and an etching gas. In this case, four gas supply pipes are installed, and four gas supply pipes (gas supply nozzles) are erected in the processing chamber 201. Further, the present invention is not limited to this, and various changes can be made.

Further, the third embodiment is applied to the seventh embodiment described above, and the pressure in the processing chamber 201 at the time of the etching step (weak film forming step) of the seventh embodiment is changed to the film forming step (strong film forming step). ) May be smaller than the pressure in the processing chamber 201. Further, the fourth embodiment is applied to the seventh embodiment, and the temperature in the processing chamber 201 at the time of the etching step (weak film forming step) of the seventh embodiment is set in the film forming step (strong film forming step). You may make it higher than the temperature in the process chamber 201. FIG.

  Moreover, although the example regarding the selective epitaxial silicon film | membrane using the dichlorosilane which is a silicon-type chlorinated material has been given in embodiment mentioned above, these embodiments, other silicon-type chlorinated materials, for example, chlorosilane, trichlorosilane, etc. It can also be applied to film formation using silicon, and film formation using silicon hydride such as monosilane or disilane.

Further, the above-described embodiment can be applied to a selective epitaxial silicon germanium film. In the case of a selective epitaxial silicon germanium film, for example, in the film formation step, the wafer temperature is 400 to 1000 ° C., the pressure is 1 to 100 Pa, the hydrogen gas flow rate is 1 to 20000 sccm, the monosilane gas flow rate is 1 to 3000 sccm, and the monogermane gas flow rate is 1 sccm or more. The etching step (including the weak film forming step) in the above-described embodiment may be appropriately performed under the processing conditions of 3000 sccm or less and a hydrogen chloride gas flow rate of 1 sccm or more and 1000 sccm or less.

It is a schematic perspective view for demonstrating the substrate processing apparatus of the preferable Example of this invention. It is a schematic longitudinal cross-sectional view for demonstrating the processing furnace of the substrate processing apparatus of preferable Example of this invention. 3 is a flowchart for explaining a substrate processing method according to a preferred embodiment of the present invention.

Claims (15)

Carrying a substrate having at least a silicon exposed surface and an exposed surface of a silicon oxide film or a silicon nitride film on a surface thereof into a processing chamber;
A first gas supply step for supplying both a first processing gas containing at least silicon and a second processing gas of an etching system into the processing chamber in a state where the substrate in the processing chamber is heated to a predetermined temperature; ,
A second gas supply step of supplying a third processing gas of an etching system having an etching power stronger than that of the second processing gas into the processing chamber;
Of the semiconductor device, wherein the first gas supply step and the second gas supply step are performed at least once, and an epitaxial film is selectively grown on the silicon exposed surface of the substrate surface. Method. The first gas supply step selectively forms a film on a silicon exposed surface of the substrate, and the second gas supply step removes silicon nuclei on the silicon oxide film or the silicon nitride film. A method for manufacturing a semiconductor device according to 1. 3. The method for manufacturing a semiconductor device according to claim 2, wherein a pressure in the processing chamber in the second gas supply step is lower than a pressure in the processing chamber in the first gas supply step. The method for manufacturing a semiconductor device according to claim 2, wherein the pressure in the processing chamber in the second gas supply step is temporarily lower than the pressure in the processing chamber in the first gas supply step. The pressure in the processing chamber in the second gas supply step is the first pressure in the processing chamber in the first gas supply step during the transition from the first gas supply step to the second gas supply step. 3. The method of manufacturing a semiconductor device according to claim 2, wherein the method is equal to the pressure, and thereafter the pressure is temporarily raised from the first pressure and then returned to the first pressure. 3. The semiconductor according to claim 2, wherein a supply amount of the third processing gas into the processing chamber in the second gas supply step is larger than a supply amount of the second processing gas in the first gas supply step. Device manufacturing method. The method of manufacturing a semiconductor device according to claim 2, wherein the temperature of the substrate in the second gas supply step is higher than the predetermined temperature in the first gas supply step. 3. The method of manufacturing a semiconductor device according to claim 2, wherein the temperature of the substrate in the second gas supply step is temporarily higher than the predetermined temperature in the first gas supply step. At the time of transition from the first gas supply step to the second gas supply step, the temperature is equal to the predetermined temperature, then temporarily set to a temperature higher than the predetermined temperature, and then returned to the predetermined temperature. A method for manufacturing a semiconductor device according to claim 2. The method of manufacturing a semiconductor device according to claim 2, wherein in the second gas supply step, the first processing gas is further supplied into the processing chamber. Carrying a substrate having at least a silicon exposed surface and an exposed surface of a silicon oxide film or a silicon nitride film on a surface thereof into a processing chamber;
A first processing gas containing at least silicon and an etching-based second processing gas are contained in the processing chamber in a state where the processing chamber is at a first pressure and the substrate in the processing chamber is heated to a first temperature. A first supply amount, and selectively forming a film on the silicon exposed surface of the substrate;
At least the processing chamber is set to a pressure higher than the first pressure, or the supply amount of the second processing gas is set higher than the first supply amount, or the temperature of the substrate is set higher than the first temperature. Removing the silicon nuclei on the silicon oxide film or the silicon nitride film by performing any one of a low temperature and a temperature lower than the thermal decomposition temperature of the first process gas;
A method of manufacturing a semiconductor device, wherein the film forming step and the removing step are performed at least once. In the removing step, the temperature of the substrate is set to the first temperature, the supply amount of the second processing gas is set to the first supply amount, and the processing chamber is set to a pressure higher than the first pressure. A method for manufacturing a semiconductor device according to claim 11. The removing step is performed by setting the temperature of the substrate to the first temperature, the processing chamber to the first pressure, and the supply amount of the second processing gas to be larger than the first supply amount. Item 12. A method for manufacturing a semiconductor device according to Item 11. In the removing step, the first processing gas is further supplied into the processing chamber in a state where the processing chamber is set to the first pressure and the supply amount of the second processing gas is set to the first supply amount. 12. The method of manufacturing a semiconductor device according to claim 11, wherein the temperature of the substrate is lower than the first temperature and lower than the thermal decomposition temperature of the first process gas. A processing chamber for accommodating the substrate;
A heating mechanism for heating the substrate;
A gas supply unit for supplying a processing gas for forming a predetermined film in the processing chamber;
A gas exhaust unit configured to exhaust the atmosphere in the processing chamber with a predetermined pressure in the processing chamber;
At least a first pressure in the processing chamber is set to a first pressure, and the substrate in the processing chamber is heated to a first temperature, and the first processing gas containing at least silicon and a second processing gas in an etching system are processed. Supply to the room, selectively deposit on the silicon exposed surface of the substrate,
At least the processing chamber is set to a pressure higher than the first pressure, or the substrate in the processing chamber is set to a temperature higher than the first temperature, or the etching power is stronger than the second processing gas than the second processing gas. A control unit that controls the heating mechanism, the gas supply unit, and the gas exhaust unit to supply a third processing gas of an etching system and remove silicon nuclei on the silicon oxide film or the silicon nitride film; A substrate processing apparatus configured.