JP2008103508A - Manufacturing method of semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device, with which fully thick epitaxial film can be grown, while keeping selectivity. <P>SOLUTION: The manufacturing method comprises a process (step 301) for bringing in a substrate, having at least a silicone exposure face and an exposure face of a silicon oxide film or a silicone nitride film on a surface into a treatment chamber, a process (step 302) for heating the substrate in the chamber to a prescribed temperature, a first gas supply process (step 303) for supplying first treatment gas, comprising at least silicone and second treatment gas for etching into the chamber and a gas supply process (step 304) for supplying at least second treatment gas into the chamber in a state where first treatment gas is not supplied. The first gas supply process and the second gas supply process are, repetitively performed by a prescribed number of times, and the epitaxial film is selectively grown on the silicon exposure face on the surface of the substrate. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method for manufacturing a semiconductor device, and more particularly, to a method for manufacturing a semiconductor device including a step of selective silicon epitaxial growth on a source / drain of a MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor).

  Along with higher integration and higher performance of MOSFETs, it is required to improve both semiconductor device characteristics and miniaturization. In order to realize this compatibility, reduction of leakage current and reduction in resistance are required as problems of the source / drain of the MOSFET. As one method for solving these problems, a silicon epitaxial film is formed on the source / drain. There are ways to selectively grow.

  Conventionally, in the selective epitaxial process, there are two methods of supplying the deposition gas and the etching gas simultaneously or alternately.

  In the case of the simultaneous supply process, the process parameters are very large and the process control is quite difficult. In addition, there is a problem that the deposition rate is greatly reduced by introducing an etching gas during the deposition.

  In the case of alternate supply, it has a first step for performing only deposition and a second step for performing only etching. In the first step, the time for starting the growth on the insulating film is delayed as compared with the Si substrate. Therefore, there is a problem that the process becomes very sensitive to selectivity.

  For this reason, it has been difficult to grow a sufficiently thick epitaxial film while maintaining selectivity in the conventional simultaneous supply process or alternate supply process.

  Accordingly, a main object of the present invention is to provide a semiconductor device manufacturing method capable of growing a sufficiently thick epitaxial film while maintaining selectivity.

According to the present invention,
Carrying a substrate having at least a silicon exposed surface and an exposed surface of a silicon oxide film or silicon nitride film on a surface thereof into a processing chamber;
Heating the substrate in the processing chamber to a predetermined temperature;
A first gas supply step of supplying both a first processing gas containing at least silicon and an etching-based second processing gas into the processing chamber;
At least a second gas supply step for supplying at least the second processing gas in a state where the first processing gas is not supplied into the processing chamber;
Provided is a semiconductor device manufacturing method in which the first gas supply step and the second gas supply step are repeatedly performed a predetermined number of times, and an epitaxial film is selectively grown on the silicon exposed surface of the substrate surface. The

According to the present invention,
A substrate processing apparatus for selectively growing an epitaxial film on the silicon exposed surface of the substrate surface including at least a silicon exposed surface and an exposed surface of a silicon oxide film or a silicon nitride film on a surface,
A processing chamber for processing the substrate;
Heating means for heating the substrate in the processing chamber to a predetermined temperature;
Gas supply means for supplying a processing gas into the processing chamber;
A first gas supply step for supplying both a first processing gas containing at least silicon and an etching-based second processing gas into the processing chamber via the gas supply means; and Control means for repeatedly executing at least a second gas supply step for supplying the second process gas a predetermined number of times in a state where the supply of the first process gas is not performed;
A substrate processing apparatus is provided.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of the semiconductor device which can grow a sufficiently thick epitaxial film, maintaining selectivity is provided.

Next, a preferred embodiment of the present invention will be described.
In a preferred embodiment of the present invention, a silicon substrate having a silicon nitride film or a silicon oxide film at least partially on the surface and having an exposed silicon surface is inserted into the processing chamber, and a silane-based gas (SiGe gas) is inserted into the processing chamber. (In the case of growing a mixed crystal film, a germane gas is also supplied.) At the same time, an etching gas such as hydrogen gas, chlorine gas, fluorine gas, hydrogen chloride gas, or the like is introduced at the same time. A silicon nitride film or a silicon oxide film by introducing only an etching gas such as chlorine gas, fluorine gas or hydrogen chloride gas, and a first step of selectively performing silicon epitaxial growth only on the silicon surface while suppressing reaction in the phase By repeating the second step of removing the silicon atoms adhering to the surface a plurality of times in order. Performing a selective epitaxial growth. By doing so, a sufficiently thick epitaxial film can be grown while maintaining selectivity.

  In a preferred embodiment of the present invention, in the process of simultaneously supplying the deposition gas and the etching gas in the selective epitaxial growth process of Si or SiGe, the etching gas is continuously supplied, and only the deposition gas is turned ON / OFF.

  Next, preferred embodiments of the present invention will be described in detail with reference to the drawings.

  As shown in FIG. 1, the processing apparatus 101 of the present invention using a cassette 110 as a wafer carrier containing a wafer (substrate) 200 made of silicon or the like includes a casing 111. Below the front wall 111a of the housing 111, a front maintenance port 103 serving as an opening provided for maintenance is opened, and a front maintenance door 104 for opening and closing the front maintenance port 103 is installed. In the maintenance door 104, a cassette loading / unloading port (substrate container loading / unloading port) 112 is established so as to communicate between the inside and outside of the casing 111. The cassette loading / unloading port 112 is open / closed by a front shutter (substrate container loading / unloading port opening / closing). The mechanism is opened and closed by a mechanism 113. A cassette stage (substrate container delivery table) 114 is installed inside the casing 111 of the cassette loading / unloading port 112. The cassette 110 is carried onto the cassette stage 114 by an in-process carrying device (not shown), and is also carried out from the cassette stage 114. The cassette stage 114 is configured so that the wafer 200 in the cassette 110 is placed in a vertical posture and the wafer loading / unloading port of the cassette 110 is directed upward by the in-process transfer device.

  A cassette shelf (substrate container mounting shelf) 105 is installed at a substantially lower center in the front-rear direction in the casing 111, and the cassette shelf 105 stores a plurality of cassettes 110 in a plurality of rows and a plurality of rows. The wafers 200 in the cassette 110 are arranged so that they can be taken in and out. The cassette shelf 105 is installed on a slide stage (horizontal movement mechanism) 106 so as to be capable of traversing. In addition, a buffer shelf (substrate container storage shelf) 107 is installed above the cassette shelf 105 and configured to store the cassette 110.

  A cassette carrying device (substrate container carrying device) 118 is installed between the cassette stage 114 and the cassette shelf 105. The cassette transport device 118 includes a cassette elevator (substrate container lifting mechanism) 118a that can be moved up and down while holding the cassette 110, and a cassette transport mechanism (substrate container transport mechanism) 118b as a transport mechanism. The cassette 110 is transported between the cassette stage 114, the cassette shelf 105, and the buffer shelf 107 by continuous operation of the cassette 118a and the cassette transport mechanism 118b.

  A wafer transfer mechanism (substrate transfer mechanism) 125 is installed behind the cassette shelf 105. The wafer transfer mechanism 125 can rotate or linearly move the wafer 200 in the horizontal direction (substrate). And a wafer transfer device elevator (substrate transfer device lifting mechanism) 125b for moving the wafer transfer device 125a up and down. As schematically shown in FIG. A, the wafer transfer device elevator 125b is installed at the left end of the pressure-resistant casing 111. By the continuous operation of the wafer transfer device elevator 125b and the wafer transfer device 125a, the tweezer (substrate holder) 125c of the wafer transfer device 125a is used as a placement portion for the wafer 200 with respect to the boat (substrate holder) 217. The wafer 200 is loaded (charged) and unloaded (discharged).

  As shown in FIG. 1, a clean unit 134a composed of a supply fan and a dustproof filter is provided behind the buffer shelf 107 so as to supply clean air that is a cleaned atmosphere. It is configured to circulate inside the casing 111. In addition, a clean unit (not shown) composed of a supply fan and a dustproof filter for supplying clean air is installed at the right end opposite to the wafer transfer device elevator 125b side, and blown out from the clean unit. After flowing through the wafer transfer device 125a, the clean air is sucked into an exhaust device (not shown) and exhausted to the outside of the casing 111.

  On the rear side of the wafer transfer device (substrate transfer device) 125a, a case (hereinafter referred to as a pressure-resistant case) 140 having a confidential performance capable of maintaining a pressure lower than atmospheric pressure (hereinafter referred to as negative pressure). Is installed, and a load lock chamber 141 that is a load lock type standby chamber having a capacity capable of accommodating the boat 217 is formed by the pressure-resistant housing 140.

  A wafer loading / unloading port (substrate loading / unloading port) 142 is opened on the front wall 140a of the pressure-resistant housing 140, and the wafer loading / unloading port 142 is opened and closed by a gate valve (substrate loading / unloading port opening / closing mechanism) 143. It has become. A gas supply pipe 144 for supplying an inert gas such as nitrogen gas to the load lock chamber 141 and an exhaust pipe (not shown) for exhausting the load lock chamber 141 to a negative pressure are provided on a pair of side walls of the pressure-resistant housing 140. And are connected to each other.

  A processing furnace 202 is provided above the load lock chamber 141. The lower end portion of the processing furnace 202 is configured to be opened and closed by a furnace port gate valve (furnace port opening / closing mechanism) 147.

  As schematically shown in FIG. 1, a boat elevator (substrate holder lifting mechanism) 115 for lifting the boat 217 is installed in the load lock chamber 141. A seal cap 219 as a lid is horizontally installed on an arm (not shown) as a connecting tool connected to the boat elevator 115, and the seal cap 219 supports the boat 217 vertically, and the lower end of the processing furnace 202 is attached to the lower end of the processing furnace 202. It is configured to be occluded.

  The boat 217 includes a plurality of holding members so that a plurality of (for example, about 50 to 150) wafers 200 are horizontally held in a state where their centers are aligned in the vertical direction. It is configured.

Next, the operation of the processing apparatus according to the preferred embodiment of the present invention will be described.
As shown in FIG. 1, the cassette loading / unloading port 112 is opened by the front shutter 113 before the cassette 110 is supplied to the cassette stage 114. Thereafter, the cassette 110 is loaded from the cassette loading / unloading port 112 and placed on the cassette stage 114 so that the wafer 200 is in a vertical posture and the wafer loading / unloading port of the cassette 110 faces upward.

  Next, the cassette 110 is rescued from the cassette stage 114 by the cassette carrying device 118, and the wafer 200 in the cassette 110 is in a horizontal posture, so that the wafer loading / unloading port of the cassette 110 faces the rear of the housing. It is rotated 90 ° clockwise around the right. Subsequently, the cassette 110 is automatically transported to the designated shelf position of the cassette shelf 105 or the buffer shelf 107 by the cassette transport device 118, delivered, temporarily stored, and then stored by the cassette transport device 118. It is transferred to the cassette shelf 105 or directly transferred to the cassette shelf 105.

  The slide stage 106 moves the cassette shelf 105 horizontally and positions the cassette 110 to be transferred so as to face the wafer transfer device 125a.

  When the wafer loading / unloading port 142 of the load lock chamber 141 whose interior is previously set to the atmospheric pressure state is opened by the operation of the gate valve 143, the wafer 200 is removed from the cassette 110 by the tweezer 125c of the wafer transfer device 125a. And is loaded into the load lock chamber 141 through the wafer loading / unloading port 142, transferred to the boat 217, and loaded (wafer charging). The wafer transfer device 125 a that has delivered the wafer 200 to the boat 217 returns to the cassette 110 and loads the next wafer 110 into the boat 217.

  When a predetermined number of wafers 200 are loaded into the boat 217, the wafer loading / unloading port 142 is closed by the gate valve 143, and the load lock chamber 141 is evacuated from the exhaust pipe to be decompressed. When the load lock chamber 141 is reduced to the same pressure as that in the processing furnace 202, the lower end portion of the processing furnace 202 is opened by the furnace port gate valve 147. Subsequently, the seal cap 219 is raised by the boat elevator 115, and the boat 217 supported by the seal cap 219 is loaded into the processing furnace 202.

After loading, arbitrary processing is performed on the wafer 200 in the processing furnace 202.
After the processing, the boat 217 is pulled out by the boat elevator 115, and the gate valve 143 is opened after the inside of the load lock chamber 140 is restored to atmospheric pressure. After that, the wafer 200 and the cassette 110 are discharged out of the casing 111 in the reverse procedure described above.

  Next, the processing furnace 202 of the substrate processing apparatus according to the preferred embodiment of the present invention will be described.

  As shown in FIG. 2, the processing furnace 202 has a heater 206 as a heating mechanism. The heater 206 has a cylindrical shape, is composed of a heater wire and a heat insulating member provided around the heater wire, and is vertically installed by being supported by a holding body (not shown).

Inside the heater 206, an outer tube 205 as a reaction tube is disposed concentrically with the heater 206. The outer tube 205 is made of a heat-resistant material such as quartz (SiO ₂ ) or silicon carbide (SiC), and is formed in a cylindrical shape with the upper end closed and the lower end opened. A processing chamber 201 is formed in a cylindrical hollow portion inside the outer tube 205, and is configured to be able to accommodate wafers 200 as substrates in a state where they are aligned in multiple stages in a vertical posture in a horizontal posture by a boat 217 described later. Yes.

  A manifold 209 is disposed below the outer tube 205 concentrically with the outer tube 205. The manifold 209 is made of, for example, stainless steel and has a cylindrical shape with an upper end and a lower end opened. The manifold 209 is provided to support the outer tube 205. An O-ring as a seal member is provided between the manifold 209 and the outer tube 205. Since the manifold 209 is supported by a holding body (not shown), the outer tube 205 is installed vertically. A reaction vessel is formed by the outer tube 205 and the manifold 209.

  The manifold 209 is provided with a gas exhaust pipe 231 and a gas supply pipe 232 that passes therethrough. The gas supply pipe 232 is divided into three on the upstream side, and the first gas supply source 180, via valves 177, 178, 179 and MFCs (mass flow controllers) 183, 184, 185 as gas flow control devices, The second gas supply source 181 and the third gas supply source 182 are connected to each other. A gas flow rate control unit 235 is electrically connected to the MFCs 183, 184, 185 and the valves 177, 178, 179 so that the flow rate of the supplied gas is controlled at a desired timing. It is configured. A vacuum exhaust device 246 such as a vacuum pump is connected to the downstream side of the gas exhaust pipe 231 via a pressure sensor (not shown) as a pressure detector and an APC valve 242 as a pressure regulator. A pressure control unit 236 is electrically connected to the pressure sensor and the APC valve 242, and the pressure control unit 236 adjusts the opening degree of the APC valve 242 based on the pressure detected by the pressure sensor. Control is performed at a desired timing so that the pressure in the processing chamber 201 becomes a desired pressure.

  Below the manifold 209, a seal cap 219 is provided as a furnace port lid for hermetically closing the lower end opening of the manifold 209. The seal cap 219 is made of a metal such as stainless steel and has a disk shape. On the upper surface of the seal cap 219, an O-ring as a seal member that comes into contact with the lower end of the manifold 209 is provided. The seal cap 219 is provided with a rotation mechanism 254. A rotation shaft 255 of the rotation mechanism 254 passes through the seal cap 219 and is connected to a boat 217 described later, and is configured to rotate the wafer 200 by rotating the boat 217. The seal cap 219 is configured to be moved up and down in a vertical direction by a lifting motor 248 described later as a lifting mechanism provided on the outside of the processing furnace 202, and thereby the boat 217 is carried into and out of the processing chamber 201. It is possible. A drive control unit 237 is electrically connected to the rotation mechanism 254 and the lift motor 248, and is configured to control at a desired timing so as to perform a desired operation.

  The boat 217 serving as a substrate holder is made of a heat-resistant material such as quartz or silicon carbide, and is configured to hold a plurality of wafers 200 in a horizontal posture and in a state where the centers are aligned with each other and held in multiple stages. ing. In addition, a plurality of heat insulating plates 216 as a disk-shaped heat insulating member made of a heat resistant material such as quartz or silicon carbide are arranged in a plurality of stages in a horizontal posture at the lower part of the boat 217, Is difficult to be transmitted to the manifold 209 side.

  In the vicinity of the heater 206, a temperature sensor (not shown) is provided as a temperature detector for detecting the temperature in the processing chamber 201. A temperature controller 238 is electrically connected to the heater 206 and the temperature sensor, and the temperature in the processing chamber 201 is adjusted by adjusting the power supply to the heater 206 based on the temperature information detected by the temperature sensor. It is configured to control at a desired timing so that the temperature distribution is as follows.

  In the configuration of the processing furnace 202, the first processing gas is supplied from the first gas supply source 180, the flow rate thereof is adjusted by the MFC 183, and then the processing chamber 201 is connected to the processing chamber 201 by the gas supply pipe 232 through the valve 177. Introduced in. The second processing gas is supplied from the second gas supply source 181, the flow rate of which is adjusted by the MFC 184, and then introduced into the processing chamber 201 through the valve 178 through the gas supply pipe 232. The third processing gas is supplied from the third gas supply source 182, the flow rate of which is adjusted by the MFC 185, and then introduced into the processing chamber 201 from the gas supply pipe 232 through the valve 179. The gas in the processing chamber 201 is exhausted from the processing chamber 201 by a vacuum pump 246 as an exhaust device connected to the gas exhaust pipe 231.

  Next, the configuration around the processing furnace of the substrate processing apparatus used in the present invention will be described.

  A lower substrate 245 is provided on the outer surface of the load lock chamber 140 as a spare chamber. The lower substrate 245 is provided with a guide shaft 264 that fits with the lifting platform 249 and a ball screw 244 that screws with the lifting platform 249. The upper substrate 247 is provided on the upper ends of the guide shaft 264 and the ball screw 244 that are erected on the lower substrate 245. The ball screw 244 is rotated by an elevating motor 248 provided on the upper substrate 247. The lifting platform 249 is configured to move up and down as the ball screw 244 rotates.

  A hollow elevating shaft 250 is vertically suspended from the elevating table 249, and a connecting portion between the elevating table 249 and the elevating shaft 250 is airtight. The elevating shaft 250 moves up and down together with the elevating table 249. The lifting shaft 250 penetrates the top plate 251 of the load lock chamber 140. The through hole of the top plate 251 through which the elevating shaft 250 penetrates has a sufficient margin so as not to contact the elevating shaft 250. A bellows 265 as a hollow elastic body having elasticity is provided between the load lock chamber 140 and the lift platform 249 so as to cover the periphery of the lift shaft 250 in order to keep the load lock chamber 140 airtight. The bellows 265 has a sufficient amount of expansion / contraction that can accommodate the amount of elevation of the lifting platform 249, and the inner diameter of the bellows 265 is sufficiently larger than the outer shape of the lifting / lowering shaft 250 to prevent contact with the expansion / contraction of the bellows 265. Yes.

  A lifting substrate 252 is fixed horizontally to the lower end of the lifting shaft 250. A drive unit cover 253 is airtightly attached to the lower surface of the elevating substrate 252 via a seal member such as an O-ring. The elevating board 252 and the drive unit cover 253 constitute a drive unit storage case 256. With this configuration, the inside of the drive unit storage case 256 is isolated from the atmosphere in the load lock chamber 140.

  A rotation mechanism 254 of the boat 217 is provided inside the drive unit storage case 256, and the periphery of the rotation mechanism 254 is cooled by the cooling mechanism 257.

  The power supply cable 258 is led from the upper end of the lifting shaft 250 through the hollow portion of the lifting shaft 250 to the rotating mechanism 254 and connected thereto. The cooling mechanism 257 and the seal cap 219 are provided with a cooling flow path 259, and a cooling water pipe 260 for supplying cooling water is connected to the cooling flow path 259. It passes through the hollow part.

  The elevating motor 248 is driven and the ball screw 244 rotates to raise and lower the drive unit storage case 256 via the elevating platform 249 and the elevating shaft 250.

  As the drive unit storage case 256 rises, the seal cap 219 provided in an airtight manner on the elevating substrate 252 closes the furnace port 161, which is an opening of the process furnace 202, and enables wafer processing. When the drive unit storage case 256 is lowered, the boat 217 is lowered together with the seal cap 219, and the wafer 200 can be carried out to the outside.

  The gas flow rate control unit 235, the pressure control unit 236, the drive control unit 237, and the temperature control unit 238 also constitute an operation unit and an input / output unit, and are electrically connected to a main control unit 239 that controls the entire substrate processing apparatus. ing. These gas flow rate control unit 235, pressure control unit 236, drive control unit 237, temperature control unit 238, and main control unit 239 are configured as a controller 240.

  Next, a method of forming an Epi-Si film on a substrate such as the wafer 200 as one step of a semiconductor device manufacturing process using the processing furnace 202 having the above configuration will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 240.

  When a plurality of wafers 200 are loaded into the boat 217, as shown in FIG. 2, the boat 217 holding the plurality of wafers 200 is processed by the lifting and lowering operations of the lifting platform 249 and the lifting shaft 250 by the lifting motor 248. It is carried into the chamber 201 (boat loading). In this state, the seal cap 219 seals the lower end of the manifold 209 via the O-ring.

  The processing chamber 201 is evacuated by a vacuum evacuation device 246 so that a desired pressure (degree of vacuum) is obtained. At this time, the pressure in the processing chamber 201 is measured by a pressure sensor, and the pressure regulator 242 is feedback-controlled based on the measured pressure. Further, the processing chamber 201 is heated by the heater 206 so as to have a desired temperature. At this time, the power supply to the heater 206 is feedback-controlled based on the temperature information detected by the temperature sensor so that the inside of the processing chamber 201 has a desired temperature distribution. Subsequently, the wafer 200 is rotated by rotating the boat 217 by the rotation mechanism 254.

The first gas supply source 180, the second gas supply source 181, and the third gas supply source 182 are monosilane gas (SiH ₄ ), chlorine gas (or hydrogen chloride gas), and hydrogen gas (H ₂ ) is enclosed, and then each processing gas is supplied from these processing gas supply sources. After the openings of the MFCs 183, 184, and 185 are adjusted so as to obtain a desired flow rate, the valves 176, 177, and 178 are opened, and the respective processing gases flow through the gas supply pipe 232, and the upper portion of the processing chamber 201 is opened. Are introduced into the processing chamber 201. The introduced gas passes through the processing chamber 201 and is exhausted from the gas exhaust pipe 231. The processing gas comes into contact with the wafer 200 when passing through the processing chamber 201, and an Epi-Si film is selectively epitaxially grown on the surface of the wafer 200.

  When a preset time elapses, an inert gas is supplied from an inert gas supply source (not shown), the inside of the processing chamber 201 is replaced with the inert gas, and the pressure in the processing chamber 201 is returned to normal pressure. The

  Thereafter, the seal cap 219 is lowered by the elevating motor 248 so that the lower end of the manifold 209 is opened, and the processed wafer 200 is carried out from the lower end of the manifold 209 to the outside of the outer tube 205 while being held by the boat 217 ( Boat unloading). Thereafter, the processed wafer 200 is taken out from the boat 217 (wafer discharge).

  Next, substrate processing in a preferred embodiment of the present invention will be described with reference to FIG.

  In a preferred embodiment of the present invention, a silicon wafer 200 having a silicon nitride film or a silicon oxide film at least partially on the surface and also exposing the silicon surface is inserted into the processing chamber 201 (step 301).

  Next, the temperature of the wafer 200 is set to a predetermined temperature within a range of 500 to 700 ° C. (step 302).

  Next, in step 303, a monosilane gas as a deposition gas and a chlorine gas (or hydrogen chloride gas) as an etching gas are simultaneously introduced into the processing chamber 201 to irradiate the wafer 200, and as an etching gas, Step 304 of introducing only chlorine gas (or hydrogen chloride gas) into the processing chamber 201 and irradiating the wafer 200 is sequentially repeated a plurality of times to perform selective epitaxial growth of the silicon film.

  As in step 303, silicon epitaxial growth is selectively performed only on the silicon surface while suppressing the reaction of the monosilane gas in the gas phase by simultaneously introducing monosilane gas and chlorine gas (or hydrogen chloride gas).

  Further, as in step 304, silicon atoms attached on the silicon nitride film or silicon oxide film are removed by introducing only the etching gas.

  Thus, by repeating step 303 and step 304 a plurality of times, a sufficiently thick epitaxial film can be grown while maintaining selectivity.

  Note that the switching between step 303 and step 304 can be performed by constantly flowing the etching gas and turning on / off only the deposition gas.

  In Step 303 and Step 304, it is preferable that the pressure is 300 Pa or less, the monosilane gas flow rate is 1 to 300 sccm, and the chlorine gas (or hydrogen chloride gas) flow rate is 1 to 500 sccm. Further, it is preferable that hydrogen gas as a carrier gas is flowed from 10 to 50000 sccm, and nitrogen gas as a carrier gas is flowed from 0 to 30000 sccm. Hydrogen gas and nitrogen gas as carrier gases are flowed simultaneously with the deposition gas and the etching gas. In the case of flowing nitrogen gas, another gas supply line including a nitrogen gas supply source, an MFC and a valve is added.

  After step 303 and step 304 are repeated a predetermined number of times to selectively grow a desired epitaxial film, the gas is stopped and the processing chamber 201 is exhausted.

  Thereafter, the wafer 200 is unloaded from the processing chamber 201 (step 305).

It is a schematic perspective view for demonstrating the substrate processing apparatus of the preferable Example of this invention. It is a schematic longitudinal cross-sectional view for demonstrating the processing furnace of the substrate processing apparatus of preferable Example of this invention. 3 is a flowchart for explaining a substrate processing method according to a preferred embodiment of the present invention.

Claims (1)

Carrying a substrate having at least a silicon exposed surface and an exposed surface of a silicon oxide film or silicon nitride film on a surface thereof into a processing chamber;
Heating the substrate in the processing chamber to a predetermined temperature;
A first gas supply step of supplying both a first processing gas containing at least silicon and an etching-based second processing gas into the processing chamber;
At least a second gas supply step for supplying at least the second processing gas in a state where the first processing gas is not supplied into the processing chamber;
A method of manufacturing a semiconductor device, wherein the first gas supply step and the second gas supply step are repeatedly performed a predetermined number of times, and an epitaxial film is selectively grown on a silicon exposed surface of the substrate surface.

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