JP2012195355A - Substrate processing device and substrate manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To suppress roughness of a surface in an etching step for removing a damaged substrate surface.SOLUTION: A substrate manufacturing method comprises: a first etching step of raising a temperature of a reaction chamber and supplying a first etching gas to a plurality of substrates after the temperature of the reaction chamber has become a first temperature; a second etching step of supplying the first etching gas and a silicon-atom-containing gas to the plurality of the substrates after the temperature of the reaction chamber has become a second temperature higher than the first temperature; and a first film formation step of supplying the silicon-atom-containing gas and a carbon-atom-containing gas to the plurality of the substrates after the temperature of the reaction chamber has become a third temperature higher than the second temperature and forming a silicon carbide film on the plurality of the substrates.

Description

  The present invention relates to a substrate processing apparatus for processing a substrate, a method for manufacturing a semiconductor device, and a method for manufacturing a substrate, in particular, a substrate processing apparatus having a step of forming a silicon carbide (hereinafter referred to as SiC) epitaxial film on a substrate, a semiconductor The present invention relates to a device manufacturing method and a substrate manufacturing method.

  SiC is attracting attention as an element material for power devices. On the other hand, it is known that SiC is more difficult to produce a crystal substrate and a device than silicon (hereinafter referred to as Si).

  On the other hand, when manufacturing a device using SiC, a wafer in which a SiC epitaxial film is formed on a SiC substrate is used. As an example of a SiC epitaxial growth apparatus for forming a SiC epitaxial film on this SiC substrate, there is Patent Document 1.

  Patent Document 1 describes a so-called vertical batch type heat treatment apparatus in which a plurality of substrates are arranged in the height direction and SiC epitaxial growth is performed in a lump.

  On the other hand, Patent Document 2 describes that hydrogen etching is performed before SiC epitaxial growth in order to remove damage due to polishing scratches on the surface of the SiC substrate. In addition, a method is described in which a SiC smoothed substrate with low surface roughness is produced by adding a small amount of silane during the hydrogen etching.

JP 2011-388A JP 2005-277229 A

  Here, in Patent Document 2, after heating the substrate to 1600 ° C., a small amount of silane, which is a raw material for epitaxial growth, is added to perform etching. However, the so-called vertical batch type heat treatment apparatus as described in Patent Document 1 has a large volume, and particularly takes a long time to heat if it is a hot wall type. For this reason, the processing time becomes long, and there is a problem that it is difficult to improve the throughput.

  According to one aspect of the present invention, a boat loading step of loading a boat that holds a plurality of substrates arranged in the height direction into the reaction chamber, the reaction chamber is heated, and the reaction chamber is at a first temperature. After the first etching step of supplying a first etching gas to the plurality of substrates, and after the first etching step, the reaction chamber becomes a second temperature higher than the first temperature, and then the first etching is performed. A second etching step of supplying a silicon atom-containing gas together with the gas toward the plurality of substrates; and after the second etching step, the reaction chamber has reached a third temperature higher than the second temperature, and then the silicon A first film formation step of supplying an atom-containing gas and a carbon atom-containing gas toward the plurality of substrates, and forming a silicon carbide film on the plurality of substrates; Method of manufacturing a substrate comprising the boat unloading step of unloading the boat for holding a plurality of substrates silicon film is formed from the reaction chamber, the, or method of manufacturing a semiconductor device is provided.

  According to another aspect of the present invention, a reaction chamber that processes a plurality of substrates, a boat that holds the plurality of substrates, and a gas supply port that supplies a film forming gas to the plurality of substrates are provided. A gas supply nozzle and a first etching gas are supplied to the reaction chamber while raising the temperature of the reaction chamber. Thereafter, when the reaction chamber reaches the first temperature, silicon atoms are added to the first etching gas. The supply of the containing gas to the reaction chamber is started, and then the supply of the silicon atom-containing gas and the carbon atom-containing gas to the reaction chamber is started when the reaction chamber reaches the first temperature. A substrate processing apparatus including a controller for controlling is provided.

  A substrate with less surface roughness can be provided.

1 is a perspective view of a semiconductor manufacturing apparatus to which the present invention is applied. It is side surface sectional drawing of the processing furnace to which this invention is applied. It is a plane sectional view of a processing furnace to which the present invention is applied. It is a figure explaining the gas supply unit of the semiconductor manufacturing apparatus with which this invention is applied. It is a block diagram which shows the control structure of the semiconductor manufacturing apparatus with which this invention is applied. It is a schematic sectional drawing of the processing furnace of the semiconductor manufacturing apparatus with which this invention is applied, and its peripheral structure. It is a process sequence diagram which shows the 1st Embodiment of this invention. It is a process sequence diagram which shows the 2nd Embodiment of this invention. It is a process sequence diagram which shows the 3rd Embodiment of this invention. It is a process sequence diagram which shows the 4th Embodiment of this invention. It is a process sequence diagram which shows the 5th Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, a so-called batch type vertical SiC epitaxial growth apparatus in which SiC wafers are arranged in the height direction in a SiC epitaxial growth apparatus which is an example of a substrate processing apparatus will be described. In addition, by setting it as a batch type vertical SiC epitaxial growth apparatus, the number of the SiC wafers which can be processed at once increases and a throughput improves.

<Overall configuration>
First, referring to FIG. 1, a substrate processing apparatus for forming a SiC epitaxial film according to the first embodiment of the present invention, and a substrate for forming a SiC epitaxial film which is one of semiconductor device manufacturing steps. The manufacturing method will be described.

  A semiconductor manufacturing apparatus 10 as a substrate processing apparatus (film forming apparatus) is a batch type vertical heat treatment apparatus, and includes a housing 12 in which a main part is arranged. In the semiconductor manufacturing apparatus 10, a hoop (hereinafter referred to as a pod) 16 is used as a wafer carrier as a substrate container for storing a wafer 14 (see FIG. 2) as a substrate made of, for example, SiC. A pod stage 18 is disposed on the front side of the housing 12, and the pod 16 is conveyed to the pod stage 18. For example, 25 wafers 14 are stored in the pod 16 and set on the pod stage 18 with the lid closed.

  A pod transfer device 20 is disposed in a front face of the housing 12 and at a position facing the pod stage 18. A pod storage shelf 22, a pod opener 24, and a substrate number detector 26 are disposed in the vicinity of the pod transfer device 20. The pod storage shelf 22 is disposed above the pod opener 24 and is configured to hold a plurality of pods 16 mounted thereon. The substrate number detector 26 is disposed adjacent to the pod opener 24, and the pod transfer device 20 transfers the pod 16 among the pod stage 18, the pod storage shelf 22, and the pod opener 24. The pod opener 24 opens the lid of the pod 16, and the substrate number detector 26 detects the number of wafers 14 in the pod 16 with the lid opened.

  A substrate transfer machine 28 and a boat 30 as a substrate holder are disposed in the housing 12. The substrate transfer machine 28 has an arm (tweezer) 32, and has a structure that can be moved up and down and rotated by a driving means (not shown). The arm 32 can take out, for example, five wafers 14. By moving the arm 32, the wafer 14 is transferred between the pod 16 and the boat 30 placed at the position of the pod opener 24.

  The boat 30 is made of a heat-resistant material such as carbon graphite or SiC, for example, and a plurality of wafers 14 are arranged in a horizontal posture and aligned with their centers aligned, and are stacked and held in the vertical direction. It is configured. Note that a boat heat insulating portion 34 is disposed as a disk-shaped heat insulating member made of a heat resistant material such as quartz or SiC at the lower portion of the boat 30, and heat from the heated body 48 to be described later is processed. It is comprised so that it may become difficult to be transmitted to the downward side of the furnace 40 (refer FIG. 2).

  The processing furnace 40 is disposed in the upper part on the back side in the housing 12. The boat 30 loaded with a plurality of wafers 14 is loaded into the processing furnace 40 and subjected to heat treatment.

<Processing furnace configuration>
Next, referring to FIGS. 2, 3, and 4, the processing furnace 40 of the semiconductor manufacturing apparatus 10 for forming a SiC epitaxial film will be described. The processing furnace 40 is provided with a first gas supply nozzle 60 having a first gas supply port 68, a second gas supply nozzle 70 having a second gas supply port 72, and a first gas exhaust port 90. It is done. In addition, a third gas supply port 360 and a second gas exhaust port 390 for supplying an inert gas are shown.

  The processing furnace 40 is made of a heat resistant material such as quartz or SiC, and includes a reaction tube 42 formed in a cylindrical shape having a closed upper end and an opened lower end. Below the reaction tube 42, a manifold 36 is disposed concentrically with the reaction tube 42. The manifold 36 is made of, for example, stainless steel and is formed in a cylindrical shape with an upper end and a lower end opened. The manifold 36 is provided to support the reaction tube 42. An O-ring (not shown) as a seal member is provided between the manifold 36 and the reaction tube 42. Since the manifold 36 is supported by a holding body (not shown), the reaction tube 42 is installed vertically. A reaction vessel is formed by the reaction tube 42 and the manifold 36.

  The processing furnace 40 includes a derivative 48 formed in a cylindrical shape with an upper end closed and a lower end opened, and an induction coil 50 as a magnetic field generation unit. A reaction chamber 44 is formed in a cylindrical hollow portion of the to-be-derivatized 48 so that the boat 30 holding the wafer 14 as a substrate made of SiC or the like can be accommodated. As shown in the lower frame of FIG. 2, the wafer 14 is held by the annular lower wafer holder 15 and held by the boat 30 with the upper surface covered by the disk-like upper wafer holder 15 a. Good. Thereby, the wafer 14 can be protected from particles falling from the upper part of the wafer, and film formation on the back surface side with respect to the film formation surface (lower surface of the wafer 14) can be suppressed. Further, the film forming surface can be separated from the boat column of the wafer holder 15, and the influence of the boat column can be reduced. The boat 30 is configured to hold the wafers 14 held by the wafer holder 15 so as to be aligned in the vertical direction in a horizontal posture and with the centers aligned. The derivative 48 is heated by a magnetic field generated by an induction coil 50 provided outside the reaction tube 42, and the reaction chamber 44 is heated when the derivative 48 generates heat. It is like.

  In the vicinity of the derivative 48, a temperature sensor (not shown) is provided as a temperature detector that detects the temperature in the reaction chamber 44. The induction coil 50 and the temperature sensor are electrically connected to the temperature control unit 52, and the inside of the reaction chamber 44 is adjusted by adjusting the degree of energization to the induction coil 50 based on the temperature information detected by the temperature sensor. The temperature is controlled at a predetermined timing so as to obtain a desired temperature distribution (see FIG. 5).

  Preferably, in the reaction chamber 44, between the first and second gas supply nozzles 60, 70 and the first gas exhaust port 90, and between the heated object 48 and the wafer 14. In the meantime, a structure 300 extending in the vertical direction and having an arc-shaped cross section is preferably provided in the reaction chamber 44 so as to fill the space between the heated object 48 and the wafer 14. For example, as shown in FIG. 3, by providing the structures 300 at the opposing positions, the gas supplied from the first and second gas supply nozzles 60 and 70 is transferred along the inner wall of the derivative 48 to the wafer. Bypassing 14 can be prevented. When the structure 300 is preferably made of a heat insulating material, carbon felt or the like, heat resistance and generation of particles can be suppressed.

  Between the reaction tube 42 and the to-be-derivatized 48, a heat insulating material 54 made of, for example, a carbon felt that is not easily dielectric is provided. By providing the heat insulating material 54, the heat of the to-be-derivatized 48 is changed to the reaction tube 42 or Can suppress the transmission to the outside of the reaction tube 42.

  Further, an outer heat insulating wall 55 having, for example, a water cooling structure is provided outside the induction coil 50 so as to suppress the heat in the reaction chamber 44 from being transmitted to the outside so as to surround the reaction chamber 44. Further, a magnetic seal 58 for preventing the magnetic field generated by the induction coil 50 from leaking outside is provided outside the outer heat insulating wall 55.

  As shown in FIG. 2, a first gas supply nozzle 60 provided with at least one first gas supply port 68 is installed between the derivative 48 and the wafer 14. Further, a second gas supply nozzle 70 provided with at least one second gas supply port 72 is provided at a location different from the first gas supply nozzle 60 between the derivative 48 and the wafer 14. . Similarly, the first gas exhaust port 90 is also disposed between the heated object 48 and the wafer 14. In addition, a third gas supply port 360 and a second gas exhaust port 390 are disposed between the reaction tube 42 and the heat insulating material 54. The gas types supplied from the first gas supply nozzle 60 and the second gas supply nozzle 70 will be described later.

  The first gas supply port 68 and the first gas supply nozzle 60 are made of, for example, carbon graphite and are provided in the reaction chamber 44. The first gas supply nozzle 60 is attached to the manifold 36 so as to penetrate the manifold 36. The first gas supply nozzle 60 is connected to the gas supply unit 200 via the first gas line 222.

  The second gas supply port 72 is made of, for example, carbon graphite and is provided in the reaction chamber 44. The second gas supply nozzle 70 is attached to the manifold 36 so as to penetrate the manifold 36. Further, the second gas supply nozzle 70 is connected to the gas supply unit 200 via the second gas line 260.

  Further, in the first gas supply nozzle 60 and the second gas supply nozzle 70, one first gas supply port 68 and one second gas supply port 72 may be provided in the arrangement region of the substrate. Alternatively, it may be provided for every predetermined number of wafers 14.

<Exhaust system>
As shown in FIG. 3, a first gas exhaust port 90 is provided below the boat 30, and a gas exhaust pipe 230 connected to the first gas exhaust port 90 is provided in the manifold 36 so as to pass therethrough. ing. A vacuum exhaust device 220 such as a vacuum pump is connected to the downstream side of the gas exhaust pipe 230 via a pressure sensor (not shown) as a pressure detector and an APC (Auto Pressure Controller) valve 214 as a pressure regulator. Yes. A pressure control unit 98 is electrically connected to the pressure sensor and the APC valve 214, and the pressure control unit 98 adjusts the opening degree of the APC valve 214 based on the pressure detected by the pressure sensor, thereby processing furnace. Control is performed at a predetermined timing so that the pressure in 40 becomes a predetermined pressure (see FIG. 5).

  As described above, the gas supplied from the first gas supply port 68 and the second gas supply port 72 flows in parallel to the wafer 14 made of Si or SiC, and is exhausted from the first gas exhaust port 90. Therefore, the entire wafer 14 is exposed to the gas efficiently and uniformly.

  A boat heat insulating portion 34A is provided under the boat 30 so that the manifold 36 and the like are not heated by the radiant heat from the reaction chamber. Further, in the present embodiment, heat exchange is performed to reduce the temperature of the deposition gas by performing heat exchange with the deposition gas so that the deposition gas heated in the reaction chamber does not reach the manifold 36 or the like at a high temperature. Is provided. Specifically, the boat heat insulating portion 34A has a hollow cylindrical shape, and the film forming gas is exhausted along the side surface. Thus, by making the boat heat insulating part 34A cylindrical, the contact area with the film forming gas exhausted is increased, and the efficiency of heat exchange is improved. Moreover, the 2nd heat exchange part provided in the lower part of the 1st heat exchange part 34B and the gas supply nozzle 60 (70) is provided so that the said boat heat insulation part 34A may be enclosed. The first heat exchanging part 34B and the second heat exchanging part 34C are arranged so as to have a gap with the boat heat insulating part 34A, and the flow of the film forming gas to be exhausted is passed through the flow path of the film forming gas in the reactant. It is narrower than the flow path. Thereby, since the film forming gas is exhausted through the narrow flow path, the efficiency of heat exchange is further improved.

  As shown in FIG. 3, the third gas supply port 360 is disposed between the reaction tube 42 and the heat insulating material 54 and attached so as to penetrate the manifold 36. Further, the second gas exhaust port 390 is disposed between the reaction tube 42 and the heat insulating material 54 so as to face the third gas supply port 360, and the second gas exhaust port 390 is a gas It is connected to the exhaust pipe 230. The third gas supply port 360 is formed in a third gas line 240 that penetrates the manifold 36, and the third gas line is connected to the gas supply unit 200. As shown in FIG. 4, the third gas line is connected to a gas supply source 210f via a valve 212f and an MFC 211f. For example, a rare gas Ar gas is supplied as an inert gas from the gas supply source 210f, and a gas contributing to the growth of the SiC epitaxial film is prevented from entering between the reaction tube 42 and the heat insulating material 54. It is possible to prevent unnecessary products from adhering to the inner wall of 42 or the outer wall of the heat insulating material 54.

  Further, the inert gas supplied between the reaction tube 42 and the heat insulating material 54 is exhausted from the vacuum exhaust device 220 via the APC valve 214 on the downstream side of the gas exhaust tube 230 from the second gas exhaust port 390. Is done.

<Details of gas supplied to each gas supply system>
Next, the first gas supply system and the second gas supply system will be described with reference to FIG. As shown in FIG. 4, the first gas line 222 includes a mass flow controller (hereinafter referred to as MFC) 211a as a flow rate controller (flow rate control means) for SiH ₄ gas, HCl gas, and inert gas. For example, the SiH ₄ gas supply source 210a, the HCl gas supply source 210b, and the inert gas supply source 210c are connected via the 211b and 211c and the valves 212a, 212b, and 212c.

With the above configuration, the supply flow rate, concentration, partial pressure, and supply timing of SiH ₄ gas, HCl gas, and inert gas can be controlled in the reaction chamber 44. The valves 212a, 212b, and 212c and the MFCs 211a, 211b, and 211c are electrically connected to the gas flow rate control unit 78, and are controlled at a predetermined timing so that the flow rate of the supplied gas becomes a predetermined flow rate. (See FIG. 5). Note that SiH ₄ gas, HCl gas, and inert gas supply sources 210a, 210b, and 210c, valves 212a, 212b, and 212c, MFCs 211a, 211b, and 211c, a first gas line 222, and a first gas supply nozzle, respectively. 60 and at least one first gas supply port 68 provided in the first gas supply nozzle 60 constitute a first gas supply system as a gas supply system.

Further, the second gas line 260 is connected to a C ₃ H ₈ gas supply source 210d via a MFC 211d and a valve 212d as flow rate control means for C ₃ H ₈ gas, for example, as C (carbon) atom-containing gas. As a reducing gas, for example, the H ₂ gas is connected to the H ₂ gas supply source 210e via the MFC 211e and the valve 212e as flow rate control means.

With the above configuration, the supply flow rate, concentration, and partial pressure of C ₃ H ₈ gas and H ₂ gas can be controlled in the reaction chamber 44. The valves 212d and 212e and the MFCs 211d and 211e are electrically connected to the gas flow rate control unit 78, and are controlled at a predetermined timing so that the supplied gas flow rate becomes a predetermined flow rate ( (See FIG. 5). In addition, gas supply sources 210d and 210e of C ₃ H ₈ gas and H ₂ gas, valves 212d and 212e, MFCs 211d and 211e, a second gas line 260, a second gas supply nozzle 70, and a second gas supply port 72 Thus, a second gas supply system is configured as the gas supply system.

  Thus, by supplying the Si atom-containing gas and the C atom-containing gas from different gas supply nozzles, it is possible to prevent the SiC film from being deposited in the gas supply nozzle. In addition, what is necessary is just to supply appropriate carrier gas, respectively, when adjusting the density | concentration and flow velocity of Si atom containing gas and C atom containing gas.

  Furthermore, a reducing gas such as hydrogen gas may be used in order to use the Si atom-containing gas more efficiently. In this case, it is desirable to supply the reducing gas through the second gas supply nozzle 70 that supplies the C atom-containing gas. In this way, the reducing gas is supplied together with the C atom-containing gas and mixed with the Si atom-containing gas in the reaction chamber 44, so that the reducing gas is reduced. Therefore, the decomposition of the Si atom-containing gas is compared with that during film formation. Therefore, the deposition of the Si film in the first gas supply nozzle can be suppressed. In this case, the reducing gas can be used as a carrier gas for the C atom-containing gas. Note that the use of an inert gas (particularly a rare gas) such as argon (Ar) as the carrier of the Si atom-containing gas can suppress the deposition of the Si film.

  Further, it is desirable to supply a chlorine atom-containing gas such as HCl to the first gas supply nozzle 60. In this way, even if the Si atom-containing gas is decomposed by heat and can be deposited in the first gas supply nozzle, it becomes possible to enter the etching mode with chlorine, and the first gas supply nozzle It is possible to further suppress the deposition of the Si film inside. Further, the chlorine atom-containing gas also has an effect of etching the deposited film, and the first gas supply port 68 can be prevented from being blocked.

  In addition, although HCl gas was illustrated as Cl (chlorine) atom containing gas flowed when forming a SiC epitaxial film, you may use chlorine gas.

In the above description, when forming the SiC epitaxial film, the Si (silicon) atom-containing gas and the Cl (chlorine) atom-containing gas are supplied, but a gas containing Si atoms and Cl atoms, for example, tetrachlorosilane (hereinafter, SiCl _4). ) Gas, trichlorosilane (hereinafter SiHCl ₃ ) gas, and dichlorosilane (hereinafter SiH ₂ Cl ₂ ) gas may be supplied. Needless to say, the gas containing Si atoms and Cl atoms is also a Si atom-containing gas or a mixed gas of Si atom-containing gas and Cl atom-containing gas. In particular, SiCl ₄ is desirable from the viewpoint of suppressing the consumption of Si in the nozzle because the temperature at which it is thermally decomposed is relatively high.

In the above description, C ₃ H ₈ gas is exemplified as the C (carbon) atom-containing gas. However, ethylene (hereinafter referred to as C ₂ H ₄ ) gas or acetylene (hereinafter referred to as C ₂ H ₂ ) gas may be used.

Although exemplified H ₂ gas as the reducing gas, may be used other H (hydrogen) atom-containing gas is not limited thereto. Furthermore, as the carrier gas, at least one of rare gases such as Ar (argon) gas, He (helium) gas, Ne (neon) gas, Kr (krypton) gas, and Xe (xenon) gas may be used. Alternatively, a mixed gas in which the above gases are combined may be used.

In the following description, SiCl ₄ gas as a silicon atom-containing gas and HCl gas as a chlorine atom-containing gas are supplied from the first gas supply port 68, and carbon gas is supplied from the second gas supply port 72. C ₃ H ₈ gas as atom-containing gas, and will be described as supplying the H ₂ gas as the reducing gas.

<Processing furnace peripheral configuration>
Next, referring to FIG. 6, the configuration of the processing furnace 40 and its surroundings will be described. Below the processing furnace 40, a seal cap 102 is provided as a furnace port lid for hermetically closing the lower end opening of the processing furnace 40. The seal cap 102 is made of a metal such as stainless steel and is formed in a disk shape. An O-ring (not shown) is provided on the upper surface of the seal cap 102 as a sealing material that comes into contact with the lower end of the processing furnace 40. The seal cap 102 is provided with a rotation mechanism 104, and the rotation shaft 106 of the rotation mechanism 104 is connected to the boat 30 through the seal cap 102, and the wafer 14 is rotated by rotating the boat 30. It is configured.

  Further, the seal cap 102 is configured as a lifting mechanism provided outside the processing furnace 40 so as to be vertically lifted by a lifting motor 122 which will be described later. It is possible to carry in and out. A drive control unit 108 is electrically connected to the rotation mechanism 104 and the lifting motor 122, and is configured to control at a predetermined timing so as to perform a predetermined operation (see FIG. 5).

  A lower substrate 112 is provided on the outer surface of the load lock chamber 110 as a spare chamber. The lower substrate 112 is provided with a guide shaft 116 that is slidably fitted to the lifting platform 114 and a ball screw 118 that is screwed to the lifting platform 114. Further, an upper substrate 120 is provided at the upper ends of the guide shaft 116 and the ball screw 118 erected on the lower substrate 112. The ball screw 118 is rotated by an elevating motor 122 provided on the upper substrate 120, and the elevating platform 114 is moved up and down by rotating the ball screw 118.

  A hollow elevating shaft 124 is vertically suspended from the elevating platform 114, and a connecting portion between the elevating platform 114 and the elevating shaft 124 is airtight. The elevating shaft 124 is moved up and down together with the elevating platform 114. The elevating shaft 124 passes through the top plate 126 of the load lock chamber 110, and a sufficient clearance is formed in the through hole of the top plate 126 through which the elevating shaft 124 passes so that the elevating shaft 124 does not contact the top plate 126. Has been.

  A bellows 128 is provided as a hollow elastic body having elasticity so as to cover the periphery of the lifting shaft 124 between the load lock chamber 110 and the lifting platform 114, and the load lock chamber 110 is hermetically sealed by the bellows 128. It is supposed to be kept. The bellows 128 has a sufficient amount of expansion and contraction that can accommodate the amount of elevation of the lifting platform 114, and the inner diameter of the bellows 128 is sufficiently larger than the outer diameter of the lifting shaft 124. It is comprised so that 124 may not contact.

  The elevating board 130 is horizontally fixed to the lower end of the elevating shaft 124, and the drive unit cover 132 is airtightly attached to the lower surface of the elevating board 130 via a seal member such as an O-ring. The elevating board 130 and the drive unit cover 132 constitute a drive unit storage case 134, and this configuration isolates the inside of the drive unit storage case 134 from the atmosphere in the load lock chamber 110.

  A rotation mechanism 104 for the boat 30 is provided inside the drive unit storage case 134, and the periphery of the rotation mechanism 104 is cooled by a cooling mechanism 135.

  The power cable 138 passes through the hollow portion from the upper end of the elevating shaft 124 and is guided to the rotation mechanism 104 and connected thereto. A cooling water flow path 140 is formed in the cooling mechanism 135 and the seal cap 102. Further, a cooling water pipe 142 is led from the upper end of the elevating shaft 124 through the hollow portion to the cooling water flow path 140 and connected thereto.

  As the elevating motor 122 is driven and the ball screw 118 rotates, the drive unit storage case 134 is raised and lowered via the elevating platform 114 and the elevating shaft 124.

  When the drive unit storage case 134 is raised, the seal cap 102 provided in an airtight manner on the elevating substrate 130 closes the furnace port 144 that is an opening of the processing furnace 40, so that wafer processing is possible. Further, when the drive unit storage case 134 is lowered, the boat 30 is lowered together with the seal cap 102, and the wafer 14 can be carried out to the outside.

<Control unit>
Next, referring to FIG. 5, the control configuration of each part constituting the semiconductor manufacturing apparatus 10 for forming a SiC epitaxial film will be described.

  The temperature control unit 52, the gas flow rate control unit 78, the pressure control unit 98, and the drive control unit 108 constitute an operation unit and an input / output unit, and are electrically connected to a main control unit 150 that controls the entire semiconductor manufacturing apparatus 10. ing. The temperature control unit 52, the gas flow rate control unit 78, the pressure control unit 98, and the drive control unit 108 are configured as a controller 152.

<Outline of SiC Film Forming Method>
Next, as a step of the semiconductor device manufacturing process using the semiconductor manufacturing apparatus 10 described above, a substrate manufacturing method for forming, for example, a SiC film on a substrate such as a wafer 14 made of SiC or the like will be described. In the following description, the operation of each part constituting the semiconductor manufacturing apparatus 10 is controlled by the controller 152.

  First, when the pod 16 storing a plurality of wafers 14 is set on the pod stage 18, the pod 16 is transferred from the pod stage 18 to the pod storage shelf 22 by the pod transfer device 20 and stocked. Next, the pod 16 stocked on the pod storage shelf 22 is transported and set to the pod opener 24 by the pod transport device 20, the lid of the pod 16 is opened by the pod opener 24, and the pod 16 is detected by the substrate number detector 26. The number of wafers 14 housed in is detected.

  Next, the wafer 14 is taken out from the pod 16 at the position of the pod opener 24 by the substrate transfer device 28 and transferred to the boat 30.

  When a plurality of wafers 14 are loaded into the boat 30, the boat 30 holding the wafers 14 is loaded into the reaction chamber 44 (boat loading) by the lifting and lowering operation of the lifting platform 114 and the lifting shaft 124 by the lifting motor 122. . In this state, the seal cap 102 is in a state of sealing the lower end of the manifold 36 via an O-ring (not shown).

  After the boat 30 is loaded, the reaction chamber 44 is evacuated by the evacuation device 220 so that the inside of the reaction chamber 44 has a predetermined pressure (degree of vacuum). At this time, the pressure in the reaction chamber 44 is measured by a pressure sensor (not shown), and the APC valve 214 communicating with the first gas exhaust port 90 and the second gas exhaust port 390 based on the measured pressure is used. Feedback controlled. Further, the derivative 48 is heated so that the inside of the wafer 14 and the reaction chamber 44 has a predetermined temperature. At this time, the current supply to the induction coil 50 is feedback controlled based on temperature information detected by a temperature sensor (not shown) so that the reaction chamber 44 has a predetermined temperature distribution. Subsequently, when the boat 30 is rotated by the rotation mechanism 104, the wafer 14 is rotated in the circumferential direction.

In addition, in order to remove damage remaining on the substrate surface, the substrate surface is etched. Thereafter, the Si (silicon) atom-containing gas and the Cl (chlorine) atom-containing gas contributing to the SiC epitaxial growth reaction are respectively supplied from gas supply sources 210a and 210b, and are supplied into the reaction chamber 44 from the first gas supply port 68. Is erupted. Further, after the opening degrees of the MFCs 211d and 211e corresponding to the C (carbon) atom-containing gas and the reducing gas H ₂ gas are adjusted to a predetermined flow rate, the valves 212d and 212e are opened, respectively. The gas flows through the second gas line 260, flows through the second gas supply nozzle 70, and is introduced into the reaction chamber 44 through the second gas supply port 72.

  The gas supplied from the first gas supply port 68 and the second gas supply port 72 passes through the inside of the derivative 48 in the reaction chamber 44 and passes through the gas exhaust pipe 230 from the first gas exhaust port 90. Exhausted. When the gas supplied from the first gas supply port 68 and the second gas supply port 72 passes through the reaction chamber 44, the gas contacts the wafer 14 made of SiC or the like, and the SiC is formed on the surface of the wafer 14. Epitaxial film growth is performed. These will be described in detail later.

  Further, after the opening of the corresponding MFC 211f is adjusted by the gas supply source 210f so that the Ar gas, which is a rare gas as an inert gas, has a predetermined flow rate, the valve 212f is opened and the third gas line is opened. 240 is supplied to the reaction chamber 44 from the third gas supply port 360. Ar gas which is a rare gas as an inert gas supplied from the third gas supply port 360 passes between the heat insulating material 54 in the reaction chamber 44 and the reaction tube 42, and the second gas exhaust port 390. Exhausted from.

  Next, when a preset time elapses, the gas supply described above is stopped, an inert gas is supplied from an inert gas supply source (not shown), and the space inside the object to be heated 48 in the reaction chamber 44 becomes empty. While being replaced with the inert gas, the pressure in the reaction chamber 44 is returned to normal pressure.

  Thereafter, the seal cap 102 is lowered by the elevating motor 122, the lower end of the manifold 36 is opened, and the processed wafer 14 is carried out from the lower end of the manifold 36 to the outside of the reaction tube 42 while being held in the boat 30 ( The boat 30 waits at a predetermined position until the wafer 14 held in the boat 30 cools. When the wafers 14 in the boat 30 that have been waiting are cooled to a predetermined temperature, the wafers 14 are taken out from the boat 30 by the substrate transfer device 28, and transferred to the empty pod 16 set in the pod opener 24 for storage. To do. Thereafter, the pod 16 in which the wafers 14 are stored is transferred to the pod storage shelf 22 or the pod stage 18 by the pod transfer device 20. In this way, a series of operations of the semiconductor manufacturing apparatus 10 is completed.

<First Embodiment>
Next, as a first embodiment of the present invention, an etching process and a film forming process will be described in detail with reference to FIG. FIG. 7A shows a change in temperature in the reaction chamber 44, and FIG. 7B shows SiCl ₄ as a silicon atom-containing gas supplied from the first gas supply port 68 and hydrogen chloride gas. FIG. 7C shows the supply timing of C ₃ H ₈ as the carbon atom-containing gas supplied from the second gas supply port 72 and the supply timing of H ₂ gas as the reducing gas. Is shown. In addition, the vertical axis | shaft of (b) (c) does not show absolute quantity, but has shown the magnitude | size of supply quantity notionally.

First, after the boat 30 is carried into the reaction chamber 44, an alternating current is passed through the induction coil 50, and the to-be-derivatized 48 generates heat, thereby raising the temperature in the reaction chamber 44. Thereafter, when the temperature in the reaction chamber 44 reaches about 800 ° C., hydrogen gas used as a reducing gas is used as an etching gas to start from the second gas supply port 72 and damage remaining on the surface of the wafer 14 is reduced. Etching for removing is started (first etching step). While the hydrogen gas as the etching gas is supplied and the substrate surface is etched, the temperature rise continues, and when the temperature reaches about 1400 ° C., the supply of SiCl ₄ as the silicon atom-containing gas is started (second etching). Process). As a result, the decrease in Si caused by etching with hydrogen gas can be compensated, and the surface roughness of the substrate can be suppressed.

Thereafter, after the temperature in the reaction chamber 44 reaches a temperature for epitaxial growth (here, 1600 ° C.), supply of hydrogen chloride gas as a chlorine atom-containing gas from the first gas supply port 68 is started, and the silicon-containing gas The supply amount of SiCl ₄ is increased. In addition, the supply of C ₃ H ₈ gas as the carbon atom-containing gas is started from the second gas supply port 72, the supply amount of hydrogen gas as the reducing gas is increased, and the epitaxial growth of the SiC film is started ( Film forming step). The film forming process is continued until the required film thickness is obtained.

In addition, the example of the supply amount of each gas of the etching process in this embodiment and the epitaxial growth process of a SiC film is as follows.
★ first and second etching step the first gas supply port ₆₈ ... SiCl 4: _10~20sccm
Second gas supply port 72... H ₂ : 1 to 15 slm
★ Film formation step First gas supply port 68... SiCl ₄ : 50 to 250 sccm,
HCl: 50-250 sccm
The second gas supply port ₇₂ ... _C 3 H 8: _5~125sccm
H _2: 200~300slm

  Thus, in this embodiment, by supplying the etching gas while raising the temperature in the reaction chamber 44, the temperature raising step and the etching step can be performed in parallel, and the processing time can be shortened. Yes. Note that the present invention can be realized without increasing the number of gas species by using hydrogen gas that uses an etching gas as a reducing gas in the film formation step.

The silicon atom-containing gas is not supplied simultaneously with the supply of the hydrogen gas, but is supplied after the temperature in the reaction chamber 44 exceeds a predetermined temperature (here, 1400 ° C.). That is, in this embodiment, since the temperature raising step and the etching step are performed in parallel, the time can be shortened. Therefore, it is desirable to supply hydrogen gas to some extent early in order to surely remove damage on the substrate surface. On the other hand, if a silicon atom-containing gas for compensating for the lack of Si on the substrate surface due to etching is supplied before the temperature in the reaction chamber 44 is sufficiently raised, silicon may agglomerate and become particles. . Therefore, in this embodiment, paying attention to the fact that the temperature at which the effect of etching with hydrogen gas increases is lower than the temperature at which silicon agglomeration occurs, hydrogen gas as an etching gas is first supplied during the temperature raising step, and the reaction chamber After the inside of 44 reaches a predetermined temperature, SiCl ₄ as a silicon atom-containing gas is supplied.

  In the present embodiment, the amount of hydrogen gas flowing during the etching process is reduced compared to the epitaxial growth process. As a result, it is possible to prevent an increase in the etching amount in the etching process in which the film forming gas for forming the SiC film is not supplied, and to reduce the surface roughness. Furthermore, the amount of silicon atom-containing gas is reduced compared to the epitaxial growth step. Thereby, it becomes possible to reduce aggregation of the silicon atom containing gas which remained without reacting.

<Second Embodiment>
Next, a second embodiment of the present invention will be described with reference to FIG. The description of the same parts as those in the first embodiment will be omitted, and differences from the first embodiment will be mainly described. Unlike the first embodiment, the second embodiment uses the hydrogen chloride gas used in the film forming process as an etching gas and supplies it before the epitaxial growth process.

More specifically, in the temperature raising step, supply of hydrogen gas as an etching gas is started when the inside of the reaction chamber 44 reaches about 800 ° C. (first etching step). Thereafter, when the inside of the reaction chamber 44 reaches a predetermined temperature (here, about 1400 ° C.), supply of SiCl ₄ as the silicon atom-containing gas and supply of HCl as the etching gas are started (second). Etching process). Thus, by supplying HCl gas as an etching gas during the temperature raising process (during the etching process), the etching amount can be increased, and damage remaining on the substrate surface can be more reliably removed. Further, Si extracted from the surface of the SiC substrate by addition of HCl can be removed before aggregation.

In addition, the example of the supply amount of each gas of the 1st and 2nd etching process in this embodiment and the film-forming process of a SiC film is as follows.
★ first and second etching step the first gas supply port ₆₈ ... SiCl 4: _10~20sccm
HCl: 50-250 sccm
Second gas supply port 72... H ₂ : 1 to 15 slm
★ Film formation step First gas supply port 68... SiCl ₄ : 50 to 250 sccm,
HCl: 50-250 sccm
The second gas supply port ₇₂ ... _C 3 H 8: _5~125sccm
H _2: 200~300slm

  In this embodiment, the hydrogen chloride gas is supplied at the same time as the supply of the silicon atom-containing gas. However, the supply is not limited to this, and the supply may be started at the same time as the supply of the hydrogen gas. However, when the supply of hydrogen chloride gas is started, the etching amount increases, so that it is considered that the roughness of the substrate surface also increases. Accordingly, when the HCl gas is supplied in parallel with the supply of the silicon atom-containing gas, etching can be performed while compensating for the loss of Si atoms on the substrate surface that occurs during the etching, so that surface roughness can be suppressed. .

<Third Embodiment>
Next, a third embodiment of the present invention will be described with reference to FIG. The description of the same parts as those in the first embodiment will be omitted, and differences from the first embodiment will be mainly described. Unlike the first embodiment, the third embodiment is SiCl ₄ as a silicon atom-containing gas at a lower temperature (about 1400 ° C.) than the epitaxial growth step before the high temperature (about 1600 ° C.) film formation step. And a buffer step of supplying C ₃ H ₈ as the carbon atom-containing gas, hydrogen gas as the reducing gas, and hydrogen chloride gas.

More specifically, in the temperature raising step, supply of hydrogen gas as an etching gas is started when the inside of the reaction chamber 44 reaches about 800 ° C. (first etching step). Thereafter, when the inside of the reaction chamber 44 reaches a predetermined temperature (here, about 1400 ° C.), supply of SiCl ₄ as a silicon atom-containing gas is started (second etching step). Also, when the temperature reaches about 1400 ° C., the temperature inside the reaction chamber 44 is stopped. After supplying the silicon atom-containing gas for a predetermined period, supply of a film forming gas necessary for forming a SiC film such as SiCl ₄ , C ₃ H ₈ , hydrogen, hydrogen chloride or the like is started (buffer process). After a predetermined period, the temperature in the reaction chamber 44 is raised again to 1600 ° C. to form an epitaxial growth film (film formation process). Here, SiCl ₄ , C ₃ H ₈ , and hydrogen chloride other than hydrogen for etching the substrate surface in the buffer process are made smaller than the flow rate in the film forming process.

  That is, in this embodiment, a buffer process is added before the film forming process for forming the epitaxial growth film, and a film forming gas for forming the SiC film at a relatively low temperature is supplied. The reason for this is as follows. First, in the film forming process, hydrogen gas is used as a reducing gas in order to efficiently use a silicon atom-containing gas. Hydrogen gas also has an action of etching the substrate surface as described above. Therefore, the substrate surface is etched also in the film forming process. However, a silicon atom-containing gas and a carbon atom-containing gas for forming the SiC film are also supplied, and an epitaxial growth film is formed because the formation of the SiC film is larger than the etching speed of the substrate surface.

  On the other hand, in the buffer process, since the supply amount of the silicon atom-containing gas and the carbon atom-containing gas for forming the SiC film is small compared with the film forming process, the formation speed of the SiC film is low, and the substrate surface is compared with the film forming process. Etching is superior. Therefore, in the buffer process, the substrate surface is etched while filling the substrate surface with SiC (or forming an extremely thin SiC film). Therefore, the roughness of the substrate surface can be reduced. Thereafter, since the epitaxial growth film can be formed on the substrate whose surface roughness is reduced by the buffer process, the yield of the epitaxial substrate can be improved.

  In the present embodiment, the buffer process is performed at a lower temperature than the film forming process. Thereby, the etching effect by hydrogen gas can be suppressed and the roughness of the surface by etching can be reduced.

In addition, the example of the supply amount of each gas of the etching process in this embodiment, a buffer process, and the film-forming process is as follows.
★ first and second etching step the first gas supply port ₆₈ ... SiCl 4: _10~20sccm
Second gas supply port 72... H ₂ : 1 to 15 slm
★ buffer process the first gas supply port ₆₈ ... SiCl 4: _10~20sccm,
H _2: 10~20sccm
The second gas supply port ₇₂ ... _C 3 H 8: _2~10sccm
H _2: 200~300slm
★ Film formation step First gas supply port 68... SiCl ₄ : 50 to 250 sccm,
HCl: 50-250 sccm
The second gas supply port ₇₂ ... _C 3 H 8: _5~125sccm
H _2: 200~300slm

<Fourth Embodiment>
Next, a fourth embodiment of the present invention will be described with reference to FIG. Note that the description of the same parts as those in the third embodiment is omitted, and differences from the third embodiment are mainly described. In the fourth embodiment, unlike the third embodiment, the flow rate of hydrogen gas is made smaller in the buffer process than in the film forming process. Thus, the etching effect can be suppressed by reducing the flow rate as well as the etching effect by reducing the temperature, and the roughness of the substrate surface due to etching can be reduced.

In addition, the example of the supply amount of each gas of the etching process in this embodiment, a buffer process, and the film-forming process is as follows.
★ first and second etching step the first gas supply port ₆₈ ... SiCl 4: _10~20sccm
Second gas supply port 72... H ₂ : 1 to 15 slm
★ buffer process the first gas supply port ₆₈ ... SiCl 4: _10~20sccm,
HCl: 10-20 sccm
The second gas supply port ₇₂ ... _C 3 H 8: _2~10sccm
H _2: 50~150slm
★ Film formation step First gas supply port 68... SiCl ₄ : 50 to 250 sccm,
HCl: 50-250 sccm
The second gas supply port ₇₂ ... _C 3 H 8: _5~125sccm
H _2: 200~300slm

<Fifth Embodiment>
Next, a fifth embodiment of the present invention will be described with reference to FIG. The description of the same parts as those in the fourth embodiment will be omitted, and differences from the fourth embodiment will be mainly described. Unlike the fourth embodiment, the fifth embodiment gradually raises the temperature in the second etching step, rather than keeping the temperature constant. At this time, it is desirable that the temperature increase rate is slower than that of the first etching step. In addition, the flow rates of the hydrogen gas and the silicon atom-containing gas in the second etching step are gradually increased. Further, the silicon atom-containing gas, the carbon atom-containing gas, the hydrogen gas, and the hydrogen chloride gas in the buffer process are gradually increased. By gradually increasing the temperature and the gas flow rate in this manner, it is possible to shift from a state where etching of the substrate surface is predominant to a state where deposition of the SiC film on the substrate surface is predominant. Thereby, a rapid change in conditions can be suppressed, and a homogeneous SiC film can be formed.

In addition, the example of the supply amount of each gas of the etching process in this embodiment and a growth process is as follows.
★ first etching step the second gas supply port ₇₂ ... H 2: _1~15slm
★ second epitaxial growth process the first gas supply port ₆₈ ... SiCl 4: _50~250sccm,
HCl: 50-250 sccm
The second gas supply port ₇₂ ... _C 3 H 8: _5~125sccm
H _2: 200~300slm

  As mentioned above, although embodiment of this invention has been described using drawing, various changes are possible unless it deviates from the meaning of this invention. For example, in the present embodiment, the first gas supply port 68, the second gas supply port 72, and two types of gas supply ports are divided, but the present invention is not limited to this, and the film forming gas is supplied from one type of gas supply port. You may supply. In addition, although the hydrogen gas and hydrogen chloride gas used in the film forming process have been described as the etching gas, the present invention is not limited to this, and different gases having different etching effects may be used. Furthermore, the temperature, the flow rate, and the temperature rising rate are examples, and are not limited thereto.

Although the present invention has been described along the embodiments, the main aspects of the present invention will be added at the end.
(Appendix 1)
A boat loading step of loading a boat holding a plurality of substrates arranged in the height direction into the reaction chamber;
A first etching step of heating the reaction chamber and supplying a first etching gas to the plurality of substrates after the reaction chamber reaches a first temperature;
A second etching step of supplying a silicon atom-containing gas to the plurality of substrates together with the first etching gas after the reaction chamber reaches a second temperature higher than the first temperature;
After the reaction chamber reaches a third temperature higher than the second temperature, the silicon atom-containing gas and the carbon atom-containing gas are supplied toward the plurality of substrates, and a silicon carbide film is formed on the plurality of substrates. A first film forming step to be formed;
A substrate unloading step of unloading a boat holding the plurality of substrates on which the silicon carbide films are formed from the reaction chamber after the film formation step, or manufacturing a semiconductor device Method.
(Appendix 2) In Appendix 1,
A method for manufacturing a substrate or a method for manufacturing a semiconductor device, wherein, in the second etching step, the second etching gas is supplied to the plurality of substrates together with the first etching gas and the silicon atom-containing gas.
(Appendix 3) In Appendix 2,
A method for manufacturing a substrate or a method for manufacturing a semiconductor device, wherein the second etching gas is not supplied in the first etching step.
(Appendix 4) In any one of Appendices 1 to 3,
The second etching step is a method for manufacturing a substrate or a method for manufacturing a semiconductor device, which is performed while raising the temperature in the reaction chamber.
(Appendix 5) In any one of Appendices 1 to 3,
Between the second etching step and the first film forming step, the silicon atom-containing gas and the carbon atom-containing gas are directed to the plurality of substrates in a state where the reaction chamber is maintained at the second temperature. A method for manufacturing a substrate or a method for manufacturing a semiconductor device, further comprising a second film formation step of supplying the first film.
(Appendix 6) In Appendix 5,
The flow rates of the silicon atom-containing gas and the carbon atom-containing gas in the first film formation step are less than the flow rates of the silicon atom-containing gas and the carbon atom-containing gas in the second film formation step. A method for manufacturing a substrate or a method for manufacturing a semiconductor device controlled by the above.
(Appendix 7) In Appendix 6,
The first etching gas is hydrogen gas,
In the second film formation step, the hydrogen gas is further supplied,
A method for manufacturing a substrate or a method for manufacturing a semiconductor device, wherein the flow rate of the hydrogen gas in the first film formation step and the flow rate of the hydrogen gas in the second film formation step are controlled to be the same.
(Appendix 8) In Appendix 6,
The first etching gas is hydrogen gas,
In the second film formation step, the hydrogen gas is further supplied,
A method for manufacturing a substrate or a method for manufacturing a semiconductor device, wherein the flow rate of the hydrogen gas in the first film formation step is controlled to be smaller than the flow rate of the hydrogen gas in the second film formation step.
(Appendix 9) In any one of Appendices 1 to 3,
A second film forming step of supplying the silicon atom-containing gas and the carbon atom-containing gas toward the plurality of substrates between the second etching step and the first film forming step;
A method for manufacturing a substrate or a method for manufacturing a semiconductor device, wherein the temperature is gradually raised from the second temperature to the third temperature in the second etching step and the first film forming step.
(Appendix 10) In Appendix 9,
A method for manufacturing a substrate or a method for manufacturing a semiconductor device, wherein a rate of temperature increase from the second temperature to the third temperature is smaller than a rate of temperature increase from the first temperature to the second temperature.
(Appendix 11)
A reaction chamber for processing a plurality of substrates;
A boat holding the plurality of substrates;
A gas supply nozzle having a gas supply port for supplying a film forming gas to the plurality of substrates;
A first etching gas is supplied to the reaction chamber while raising the temperature of the reaction chamber, and then the reaction of the silicon atom-containing gas in addition to the first etching gas when the reaction chamber reaches the first temperature. A controller that starts supply to the chamber and then controls to start supplying the silicon atom-containing gas and the carbon atom-containing gas to the reaction chamber when the reaction chamber reaches the first temperature. Substrate processing apparatus.

  DESCRIPTION OF SYMBOLS 10: Semiconductor manufacturing apparatus, 12: Housing | casing, 14: Wafer, 15: Wafer holder, 15a: Upper wafer holder, 15b: Lower wafer holder, 16: Pod, 18: Pod stage, 20: Pod conveyance apparatus, 22: Pod Storage shelf, 24: Pod opener, 26: Substrate number detector, 28: Substrate transfer machine, 30: Boat, 32: Arm, 34A: Boat heat insulation part, 34B: First heat exchange part, 34C: Second heat exchange Part: 36: manifold, 40: processing furnace, 42: reaction tube, 44: reaction chamber, 48: derivative, 50: induction coil, 52: temperature controller, 54: heat insulating material, 55: outer heat insulating wall, 58: Magnetic seal, 60: first gas supply nozzle, 68: first gas supply port, 70: second gas supply nozzle, 72: second gas supply port 72, 78: gas flow rate controller, 90: first 1 Gas exhaust port, 98: pressure control unit, 102: seal cap, 104: rotation mechanism, 106: rotation shaft, 108: drive control unit, 110: load lock chamber, 112: lower substrate, 114: lifting platform, 116: guide Shaft, 118: Ball screw, 120: Upper substrate, 122: Lifting motor, 124: Lifting shaft, 128: Bellows, 130: Lifting substrate, 132: Drive unit cover, 134: Drive unit storage case, 135: Cooling mechanism, 138 : Power cable, 140: Cooling water flow path, 142: Cooling water piping, 150: Main control unit, 152: Controller, 200: Gas supply unit, 210: Gas supply source, 211: MFC, 212: Valve, 214: APC valve 222: first gas line 230: gas exhaust pipe 260: second gas line 300: structure 360 The third gas supply port, 390: second gas outlet.

Claims (5)

A boat loading step of loading a boat holding a plurality of substrates arranged in the height direction into the reaction chamber;
A first etching step of heating the reaction chamber and supplying a first etching gas to the plurality of substrates after the reaction chamber reaches a first temperature;
A second etching step of supplying a silicon atom-containing gas to the plurality of substrates together with the first etching gas after the reaction chamber reaches a second temperature higher than the first temperature;
After the reaction chamber reaches a third temperature higher than the second temperature, the silicon atom-containing gas and the carbon atom-containing gas are supplied toward the plurality of substrates, and a silicon carbide film is formed on the plurality of substrates. A first film forming step to be formed;
A substrate unloading step of unloading a boat holding the plurality of substrates on which the silicon carbide films are formed from the reaction chamber after the film formation step, or manufacturing a semiconductor device Method. In claim 1,
A method for manufacturing a substrate or a method for manufacturing a semiconductor device, wherein, in the second etching step, the second etching gas is supplied to the plurality of substrates together with the first etching gas and the silicon atom-containing gas. In claim 1,
Between the second etching step and the first film forming step, the silicon atom-containing gas and the carbon atom-containing gas are directed to the plurality of substrates in a state where the reaction chamber is maintained at the second temperature. A method for manufacturing a substrate or a method for manufacturing a semiconductor device, further comprising a second film formation step of supplying the first film. In claim 1,
A second film forming step of supplying the silicon atom-containing gas and the carbon atom-containing gas toward the plurality of substrates between the second etching step and the first film forming step;
A method for manufacturing a substrate or a method for manufacturing a semiconductor device, wherein the temperature is gradually raised from the second temperature to the third temperature in the second etching step and the first film forming step. A reaction chamber for processing a plurality of substrates;
A boat holding the plurality of substrates;
A gas supply nozzle having a gas supply port for supplying a film forming gas to the plurality of substrates;
A first etching gas is supplied to the reaction chamber while raising the temperature of the reaction chamber, and then the reaction of the silicon atom-containing gas in addition to the first etching gas when the reaction chamber reaches the first temperature. A controller that starts supply to the chamber and then controls to start supplying the silicon atom-containing gas and the carbon atom-containing gas to the reaction chamber when the reaction chamber reaches the first temperature. Substrate processing apparatus.