JP2010153479A5 - - Google Patents

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Publication number
JP2010153479A5
JP2010153479A5 JP2008327985A JP2008327985A JP2010153479A5 JP 2010153479 A5 JP2010153479 A5 JP 2010153479A5 JP 2008327985 A JP2008327985 A JP 2008327985A JP 2008327985 A JP2008327985 A JP 2008327985A JP 2010153479 A5 JP2010153479 A5 JP 2010153479A5
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JP
Japan
Prior art keywords
semiconductor substrate
gate electrode
insulating layer
semiconductor
intermediate insulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008327985A
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English (en)
Japanese (ja)
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JP2010153479A (ja
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Publication date
Application filed filed Critical
Priority to JP2008327985A priority Critical patent/JP2010153479A/ja
Priority claimed from JP2008327985A external-priority patent/JP2010153479A/ja
Publication of JP2010153479A publication Critical patent/JP2010153479A/ja
Publication of JP2010153479A5 publication Critical patent/JP2010153479A5/ja
Pending legal-status Critical Current

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JP2008327985A 2008-12-24 2008-12-24 半導体装置及び半導体装置の製造方法 Pending JP2010153479A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008327985A JP2010153479A (ja) 2008-12-24 2008-12-24 半導体装置及び半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008327985A JP2010153479A (ja) 2008-12-24 2008-12-24 半導体装置及び半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2010153479A JP2010153479A (ja) 2010-07-08
JP2010153479A5 true JP2010153479A5 (https=) 2012-02-02

Family

ID=42572278

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008327985A Pending JP2010153479A (ja) 2008-12-24 2008-12-24 半導体装置及び半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2010153479A (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113782540B (zh) * 2021-08-31 2023-08-22 上海华虹宏力半导体制造有限公司 Sonos存储器的工艺方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10036911C2 (de) * 2000-07-28 2002-06-06 Infineon Technologies Ag Verfahren zur Herstellung einer Multi-Bit-Speicherzelle
JP2002319671A (ja) * 2001-04-20 2002-10-31 Hitachi Ltd 半導体集積回路装置
JP2003332472A (ja) * 2002-05-16 2003-11-21 Sony Corp 不揮発性半導体メモリ装置およびその製造方法
JP2004111749A (ja) * 2002-09-19 2004-04-08 Renesas Technology Corp 半導体装置およびその製造方法
US6706599B1 (en) * 2003-03-20 2004-03-16 Motorola, Inc. Multi-bit non-volatile memory device and method therefor
KR100480645B1 (ko) * 2003-04-01 2005-03-31 삼성전자주식회사 역자기 정합 방식을 이용한 트윈―ｏｎｏ 형태의ｓｏｎｏｓ 메모리 소자 제조 방법
JP4746835B2 (ja) * 2003-10-20 2011-08-10 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
JP5142494B2 (ja) * 2006-08-03 2013-02-13 ルネサスエレクトロニクス株式会社 半導体装置の製造方法

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