JP2010147190A - Double-sided light-emitting device - Google Patents

Double-sided light-emitting device Download PDF

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Publication number
JP2010147190A
JP2010147190A JP2008321511A JP2008321511A JP2010147190A JP 2010147190 A JP2010147190 A JP 2010147190A JP 2008321511 A JP2008321511 A JP 2008321511A JP 2008321511 A JP2008321511 A JP 2008321511A JP 2010147190 A JP2010147190 A JP 2010147190A
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transparent substrate
visible light
led chip
light led
electrode
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JP2008321511A
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Japanese (ja)
Inventor
Akihiko Murai
Yoji Urano
章彦 村井
洋二 浦野
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Panasonic Electric Works Co Ltd
パナソニック電工株式会社
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Priority to JP2008321511A priority Critical patent/JP2010147190A/en
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02BCLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B10/00Integration of renewable energy sources in buildings
    • Y02B10/10Photovoltaic [PV]

Abstract

<P>PROBLEM TO BE SOLVED: To provide a double-sided light-emitting device for preventing a shadow from occurring in lighting, reducing irregularities in luminance, and improving outward appearance in lights-out. <P>SOLUTION: The double-sided light-emitting device includes: a plurality of first visible light LED chips 1 packaged at one surface side of a first transparent substrate 61; and a plurality of second visible light LED chips 1 packaged at one surface side of a second transparent substrate 62. In the respective visible light LED chips 1, an LED thin-film section 2, an anode electrode 4, and a cathode electrode 5 made of a nitride semiconductor material are formed at the side of a lower surface 31 of a pyramid 3 made of a ZnO crystal in a hexagonal weight shape, the anode electrode 4 and the cathode electrode 5 of the first visible light LED chip 1 are joined to first transparent electrodes 71, 71 at one surface side of the first transparent substrate 61 via bumps 14, 15, and the anode electrode 4 and the cathode electrode 5 of the second visible light LED chip 1 are joined to second transparent electrodes 72, 72 at one surface side of the second transparent electrode 62 via the bumps 14, 15. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a double-sided light emitting device using a visible light LED chip.

  As this type of double-sided light emitting device, as shown in FIG. 2, a first transparent substrate 61 and a plurality of first visible light LED chips 1 ′ mounted on one surface side of the first transparent substrate 61, A first transparent electrode 71 provided on the one surface side of the first transparent substrate 61 for supplying power to the plurality of first visible light LED chips 1 ′, and on the one surface side of the first transparent substrate 61. A plurality of second visible light LED chips 1 ′ mounted on one surface side, which is a surface facing the first transparent substrate 61 in the second transparent substrate 62, and the second transparent substrate 62 disposed to face the second transparent substrate 62; And a second transparent electrode 72 that is provided on the one surface side of the second transparent substrate 62 and supplies power to the plurality of second visible light LED chips 1 ′ has been proposed (for example, patents). Reference 1).

In the double-sided light emitting device having the configuration shown in FIG. 2, the light emitted from the first visible light LED chip 1 ′ mounted on the first transparent substrate 61 is transmitted to the second transparent electrode 72 and the second transparent substrate 62. The light emitted from the second visible light LED chip 1 ′ mounted on the second transparent substrate 62 can be emitted through the first transparent electrode 71 and the first transparent substrate 72 to the outside. Can be emitted.
JP-A-11-162233 (paragraphs [0029]-[0030] and FIG. 10)

  By the way, in the double-sided light emitting device having the configuration shown in FIG. 2, a flat red LED chip, green LED chip, or blue LED chip is used as each LED visible light LED chip 1 ′. The first visible light LED chip 1 ′ becomes a shadow on the other surface side of the substrate 61 and the luminance unevenness increases, and the second visible light LED chip 1 ′ on the other surface side of the second transparent substrate 62 shadows. As a result, the luminance unevenness increases. Further, in the double-sided light emitting device having the configuration shown in FIG. 2, each visible light LED chip 1 ′ is conspicuous at the time of turning off, and the appearance is not good.

  The present invention has been made in view of the above-described reasons, and an object of the present invention is to provide a double-sided light emitting device that can prevent the occurrence of shadows when turned on, reduce unevenness in brightness, and improve the appearance when turned off. It is to provide.

  The invention of claim 1 is provided on the one surface side of the first transparent substrate, the plurality of first visible light LED chips mounted on the one surface side of the first transparent substrate, and the first transparent substrate. A first transparent electrode for supplying power to the plurality of first visible light LED chips, a second transparent substrate disposed opposite to the one surface side of the first transparent substrate, and a second transparent substrate. A plurality of second visible light LED chips mounted on one surface side that is a surface facing the first transparent substrate, and a plurality of second visible light LEDs provided on the one surface side of the second transparent substrate. A second transparent electrode for supplying power to the chip, and each visible light LED chip has an LED thin film portion made of a nitride semiconductor material, an anode electrode, and an underside of a cone made of a hexagonal pyramidal ZnO crystal A cathode electrode is formed, and the first visible light LED chip has an anode. Each of the cathode electrode and the cathode electrode is joined to the first transparent electrode via the bump, and each of the anode electrode and the cathode electrode of the second visible light LED chip is joined to the second transparent electrode via the bump. It is characterized by that.

  According to this invention, each visible light LED chip has an LED thin film portion made of a nitride semiconductor material, an anode electrode, and a cathode electrode formed on the lower surface side of a pyramid made of hexagonal pyramidal ZnO crystals. Each of the anode electrode and the cathode electrode of the first visible light LED chip is joined to the first transparent electrode via the bump, and each of the anode electrode and the cathode electrode of the second visible light LED chip is connected to the second transparent electrode via the bump. Since it is joined to the electrodes, light is emitted from each slope of the cone in each visible light LED chip and the surface of the LED thin film portion at the time of lighting. The brightness unevenness can be reduced, and the cone of each visible light LED chip is made of ZnO crystal and is transparent, so that each visible light LED chip is turned off when turned off. Flop is not conspicuous, it is possible to improve the appearance of the time off.

  According to a second aspect of the present invention, in the first aspect of the invention, a fine concavo-convex structure for improving light extraction efficiency is formed on a surface of the LED thin film portion of the first visible light LED chip on the first transparent substrate side. Thus, a fine concavo-convex structure for improving light extraction efficiency is formed on the surface on the second transparent substrate side of the LED thin film portion of the second visible light LED chip.

  According to the present invention, each of the visible light LED chips has a fine concavo-convex structure for improving light extraction efficiency formed on the surface of the LED thin film portion on the side opposite to the cone side. In the LED chip, the light emitted from the LED thin film portion to the side opposite to the cone side can be efficiently taken out by suppressing the light reflected from the surface of the LED thin film portion, and the luminance unevenness at the time of lighting can be further increased. It can be reduced and the light extraction efficiency can be improved.

  According to a third aspect of the present invention, in the first or second aspect of the present invention, a first transparent resin is formed in a gap between the first visible light LED chip and the first transparent substrate. An underfill portion, and a second underfill portion made of a second translucent resin is provided in a gap between the second visible light LED chip and the second transparent substrate. It is characterized by.

  According to the present invention, each underfill portion is provided on the surface side of the LED thin film portion opposite to the cone side in each visible light LED chip. The light emitted from the LED thin film portion to the side opposite to the cone side can be efficiently taken out by suppressing the light reflected from the surface of the LED thin film portion, and the brightness unevenness during lighting can be further reduced. The light extraction efficiency can be improved.

  According to a fourth aspect of the present invention, in the first to third aspects of the present invention, a holding frame that holds the first transparent substrate and the second transparent substrate is provided, and the first transparent substrate and the second transparent substrate are provided. The space surrounded by the transparent substrate and the holding frame is a vacuum atmosphere or a dry air atmosphere, and the holding frame is provided with a secondary battery for supplying power to the first visible light LED chip and the second visible light LED chip. And a solar cell capable of charging the secondary battery is provided.

  According to this invention, since the space surrounded by the first transparent substrate, the second transparent substrate, and the holding frame is a vacuum atmosphere or a dry air atmosphere, the first transparent substrate and the second transparent substrate. In the space surrounded by the transparent substrate and the holding frame can be prevented, and the first visible light LED chip and the second visible light LED chip are formed on the holding frame. In addition to providing a secondary battery for supplying power to the battery, and a solar battery capable of charging the secondary battery, there is no need to provide a separate power source, and the degree of freedom in installation location is increased. The secondary battery can prevent a part of the first transparent substrate and the second transparent substrate from being covered with shadows.

  According to the first aspect of the present invention, it is possible to prevent the occurrence of shadows at the time of lighting, reduce luminance unevenness, and improve the appearance at the time of turning off.

  Hereinafter, the double-sided light emitting device of this embodiment will be described with reference to FIG.

  The double-sided light emitting device of this embodiment includes a first transparent substrate 61, a plurality of first visible light LED chips 1 mounted on one surface side of the first transparent substrate 61, and the first transparent substrate 61. A first transparent electrode 71 provided on the one surface side for supplying power to the plurality of first visible light LED chips 1 and a second transparent electrode disposed opposite to the one surface side of the first transparent substrate 61. A plurality of second visible light LED chips 1 mounted on one surface side that is a surface of the second transparent substrate 62 facing the first transparent substrate 61, and the second transparent substrate 62 described above. And a second transparent electrode 72 provided on one surface side for supplying power to the plurality of second visible light LED chips 1.

Further, the double-sided light emitting device of the present embodiment includes a holding frame 6 that holds the first transparent substrate 61 and the second transparent substrate, and the first transparent substrate 61, the second transparent substrate 62, and the holding frame 6. Is a dry air atmosphere, but the space is not limited to a dry air atmosphere, and may be a vacuum atmosphere or an N 2 gas atmosphere. Here, since the space surrounded by the first transparent substrate 61, the second transparent substrate 62, and the holding frame 6 is a dry air atmosphere, a vacuum atmosphere, or an N 2 gas atmosphere, the first transparent substrate 61, It is possible to prevent a short circuit due to condensation in the space surrounded by the second transparent substrate 62 and the holding frame 6.

  The holding frame 6 is provided with a secondary battery 8 for supplying power to the first visible light LED chip 1 and the second visible light LED chip 1 and a solar battery capable of charging the secondary battery 8. 7 is provided. Therefore, in the double-sided light emitting device of this embodiment, it is not necessary to separately provide a power source, and the degree of freedom of installation location is increased, and the secondary battery 8 uses the first transparent substrate 61 and the second transparent substrate 62 to provide It is possible to prevent the portion from being covered and becoming a shadow.

Here, the 1st transparent substrate 61 and the 2nd transparent substrate 62 are comprised by the rectangular-plate-shaped glass substrate. In addition, as a material of the glass substrate used for each of the transparent substrates 61 and 62, for example, Pyrex (registered trademark) or borosilicate glass (BK7) may be employed. Pyrex (registered trademark) has a linear expansion coefficient of about 3.25 × 10 −6 K −1 , and borosilicate glass has a linear expansion coefficient of about 8.3 × 10 −6 K −1 .

  Moreover, although the 1st transparent electrode 71 and the 2nd transparent electrode 72 are comprised by the transparent conductive film which consists of ITO film | membranes, a transparent conductive film is not restricted to an ITO film | membrane, For example, it doped GZO (Ga was doped A ZnO) film, an AZO (Al-doped ZnO) film, an IZO (In-doped ZnO) film, or the like may be used.

  The first visible light LED chip 1 and the second visible light LED chip 1 have the same specifications. Here, the visible light LED chip 1 is a GaN-based blue LED chip that emits blue light, and has a stacked structure of an n-type nitride semiconductor layer 22, a light emitting layer 23, and a p-type nitride semiconductor layer 24. The thin film portion 2, the cathode electrode 5 electrically connected to the n-type nitride semiconductor layer 22 and the anode electrode 4 electrically connected to the p-type nitride semiconductor layer 22 are hexagonal pyramids made of n-type ZnO crystals. It is formed on the lower surface 31 side of the cone 3.

  In the LED thin film portion 2 of the visible light LED chip 1, the n-type nitride semiconductor layer 22 is composed of an n-type GaN layer, the light emitting layer 23 is composed of an InGaN layer, and the p-type nitride semiconductor layer 24 is disposed on the light emitting layer 23 side. The p-type AlGaN layer and the p-type GaN layer on the opposite side of the p-type AlGaN layer to the light-emitting layer 23 side are not particularly limited. 23 is not limited to a single layer structure, but may be a multiple quantum well structure or a single quantum well structure.

  In the visible light LED chip 1, the shape of the LED thin film portion 2 in a plan view is formed in a regular hexagonal shape slightly smaller than the lower surface 31 of the cone 3, and the cathode electrode 5 is n of the LED thin film portion 2. The n-type nitride semiconductor layer 22 is formed in contact with the n-type nitride semiconductor layer 22 and is electrically connected to the n-type nitride semiconductor layer 22, and the anode electrode 4 is formed in contact with the lower surface 31 of the cone 3. The p-type nitride semiconductor layer 24 is electrically connected. Therefore, the n-type nitride semiconductor layer 22, the light emitting layer 23, and the p-type nitride semiconductor layer 24 can have the same planar size. Here, the anode electrode 4 and the cathode electrode 5 of the visible light LED chip 1 are formed of a laminated film of a lower layer Ti film and an upper layer Au film. However, the shape, size, number and arrangement of the anode electrode 4 and the cathode electrode 5 are not particularly limited.

  In the visible light LED chip 1 described above, the LED thin film portion 2 having the above laminated structure is grown on the main surface side of the sapphire wafer whose main surface is c-plane by the epitaxial growth method (for example, MOVPE method), and then the LED thin film portion. 2 is bonded to the n-type ZnO wafer on which the cone 3 is based, and then the sapphire wafer is removed, and then the crystal orientation dependence of the etching rate using a hydrochloric acid-based etching solution (for example, hydrochloric acid aqueous solution). The hexagonal pyramid-shaped cone 3 made of a part of the n-type ZnO wafer is formed by performing anisotropic etching utilizing the above. In addition, as an n-type ZnO wafer, what was manufactured using the hydrothermal synthesis method is used. The height of the cone 3 can be defined by the thickness of the n-type ZnO wafer. In the present embodiment, the n-type ZnO wafer having a thickness of 500 μm is used. Is 500 μm, but the thickness of the n-type ZnO wafer is not particularly limited. In addition, the inclination angle of each inclined surface 33 with respect to the lower surface 31 of the cone 3 is defined by the crystal axis direction of the n-type ZnO wafer, and is a Zn polar surface that becomes the lower surface 31 of the weight 3 in the n-type ZnO wafer (0001). The cone 3 is formed by anisotropically etching the n-type ZnO wafer from the O polar plane side by providing a mask appropriately patterned on the (000-1) plane which is the O polar plane opposite to the plane). Therefore, the inclination angle of each inclined surface 33 with respect to the lower surface 31 is 60 °.

  As described above, each visible light LED chip 1 has the LED thin film portion 2, the anode electrode 4, and the cathode electrode 5 made of nitride semiconductor material formed on the lower surface side of the cone 3 made of hexagonal pyramidal ZnO crystals. The anode electrode 4 and the cathode electrode 5 of the first visible light LED chip 1 are joined to the first transparent electrodes 72 and 72 via the bumps 14 and 15, respectively, and the anode of the second visible light LED chip 1. The electrode 4 and the cathode electrode 5 are joined to the second transparent electrodes 72 and 72 via the bumps 14 and 15, respectively.

  In short, the first visible light LED chip 1 is mounted on the one surface side of the first transparent substrate 61 such that the LED thin film portion 2 is closer to the first transparent substrate 61 than the cone 3, and the second The visible light LED chip 1 is mounted on the one surface side of the second transparent substrate 62 such that the LED thin film portion 2 is closer to the second transparent substrate 62 than the cone 3.

  In each visible light LED chip 1 described above, by applying a forward bias voltage between the anode electrode 4 and the cathode electrode 5, holes are injected from the anode electrode 4 into the p-type nitride semiconductor layer 24 by tunnel current injection. At the same time, electrons are injected from the cathode electrode 5 into the n-type nitride semiconductor layer 22, and the electrons and holes injected into the light emitting layer 23 recombine to emit light, and each inclined surface 33 of the cone 3 and the LED. Light is emitted from the surface of the thin film portion 2 opposite to the cone 3 side of the n-type nitride semiconductor layer 22. Note that the refractive index of ZnO for light having a wavelength of 450 nm is 2.1, and the refractive index of GaN is 2.4.

  Each visible light LED chip 1 has a fine concavo-convex structure 22a for improving light extraction efficiency on the surface of the LED thin film portion 2 opposite to the side of the cone 3 (here, the surface of the n-type nitride semiconductor layer 22). Is formed. In short, the double-sided light emitting device of the present embodiment has the fine uneven structure 22a for improving the light extraction efficiency formed on the surface of the LED thin film portion 2 of the first visible light LED chip 1 on the first transparent substrate 61 side. A fine concavo-convex structure 22a for improving light extraction efficiency is formed on the surface of the LED thin film portion 2 of the visible light LED chip 1 on the second transparent substrate 62 side. Further, the double-sided light emitting device of the present embodiment is formed from a first translucent resin (for example, a silicone resin, an epoxy resin, etc.) in the gap between the first visible light LED chip 1 and the first transparent substrate 61. The first underfill portion 81 is provided, and the anode electrode 4 and the cathode electrode 5 of the first visible light LED chip 1 and the first transparent electrode 71 on the one surface side of the first transparent substrate 61, Connection reliability with 71 can be improved. Similarly, a second underfill portion 82 made of a second translucent resin (for example, a silicone resin, an epoxy resin, etc.) is formed in the gap between the second visible light LED chip 1 and the second transparent substrate 62. And the connection reliability between the anode electrode 4 and the cathode electrode 5 of the second visible light LED chip 1 and the second transparent electrodes 72 and 72 on the one surface side of the second transparent substrate 62 is improved. be able to.

  According to the double-sided light emitting device of the present embodiment described above, each visible light LED chip 1 has an LED thin film portion 2 made of a nitride semiconductor material on the lower surface 31 side of the cone 3 made of hexagonal pyramidal ZnO crystal, An anode electrode 4 and a cathode electrode 5 are formed, and the anode electrode 4 and the cathode electrode 5 of the first visible light LED chip 1 are respectively disposed on the one surface side of the first transparent substrate 61 via the bumps 14 and 15. The anode electrode 4 and the cathode electrode 5 of the second visible light LED chip 1 are bonded to the first transparent electrodes 71 and 71, respectively, and the first transparent electrode 62 on the one surface side of the second transparent substrate 62 is interposed via the bumps 14 and 15. Since the two transparent electrodes 72 and 72 are joined together, each visible light LED chip 1 is turned on when the first visible light LED chip 1 and the second visible light LED chip 1 are turned on. Since light is emitted from each inclined surface 33 of the cone 3 and the surface of the LED thin film portion 2, it is possible to prevent the occurrence of shadows caused by the respective visible light LED chips 1 during lighting and to prevent unevenness in luminance. Moreover, since the cone 3 of each visible light LED chip 1 is made of ZnO crystal and is transparent, each visible light LED chip 1 is not conspicuous when turned off, and it is possible to improve the appearance when turned off. .

  Moreover, in the double-sided light emitting device of this embodiment, the fine uneven structure 22a for light extraction efficiency improvement is formed in the surface on the opposite side to the cone 3 side of the LED thin film part 2 in each visible light LED chip 1 each. Therefore, in each visible light LED chip 1, light emitted from the LED thin film portion 2 to the side opposite to the cone 3 side (here, light emitted from the light emitting layer 23 to the n-type nitride semiconductor layer 22 side). Reflection on the surface of the LED thin film portion 2 can be suppressed and the light can be efficiently taken out, luminance unevenness at the time of lighting can be further reduced, and light extraction efficiency can be improved.

  Moreover, in the double-sided light-emitting device of this embodiment, as above-mentioned, it is from 1st translucent resin to the clearance gap between the LED thin film part 2 of the 1st visible light LED chip 1, and the 1st transparent substrate 61. A first underfill portion 81 is provided, and a second light-transmitting resin second gap is formed in the gap between the LED thin film portion 2 of the second visible light LED chip 1 and the second transparent substrate 62. Since the underfill portion 82 is provided, light emitted from the LED thin film portion 2 to the side opposite to the cone 3 side in each visible light LED chip 1 (here, the light emitting layer 23 to the n-type nitride semiconductor layer) The light emitted to the 22 side) can be efficiently taken out while being reflected from the surface of the LED thin film portion 2, the luminance unevenness at the time of lighting can be further reduced, and the light extraction efficiency can be improved.

  By the way, in the above-mentioned embodiment, although the light emitting layer 23 is designed so that the light radiated | emitted from the 1st visible light LED chip 1 and the 2nd visible light LED chip 1 turns into blue light, each visible light The light emitted from the LED chip 1 is not limited to blue light, and may be red light, green light, purple light, ultraviolet light, or the like. Moreover, the double-sided light emitting device of this embodiment is excited by the light radiated | emitted from the visible light LED chip 1 to each of the 1st transparent substrate 61 and the 2nd transparent substrate 62, for example rather than the visible light LED chip 1. A color conversion layer made of a translucent material containing a phosphor that is a wavelength conversion material that emits light having a long wavelength is provided, and mixed color light (for example, white light) having a color different from the emission color of the visible light LED chip 1 is provided. Etc.) may be issued. Here, the color conversion layer may be provided, for example, on the other surface of each of the transparent substrates 61 and 62 or in the middle of the thickness direction of the transparent substrates 61 and 62. Further, instead of providing the color conversion layer, the phosphor may be dispersed on each of the transparent substrates 61 and 62. The double-sided light emitting device of this embodiment has various uses such as interior use, sign use, lighting use, and house window glass.

The double-sided light emitting device of embodiment is shown, (a) is a schematic plan view, (b) is B-B 'schematic sectional drawing of (a), (c) is the principal part enlarged view of (b). It is a principal part schematic sectional drawing of the double-sided light-emitting device which shows a prior art example.

Explanation of symbols

1 visible light LED chip (first visible light LED chip, second visible light LED chip)
2 LED thin film part 3 Cone 4 Anode electrode 5 Cathode electrode 6 Holding frame 7 Solar cell 14 Bump 15 Bump 31 Lower surface 33 Slope 22a Fine uneven structure 61 First transparent substrate 62 Second transparent substrate 71 First transparent electrode 72 Second transparent electrode 81 First underfill portion 82 Second underfill portion

Claims (4)

  1.   A first transparent substrate; a plurality of first visible light LED chips mounted on one surface side of the first transparent substrate; and a plurality of first visible lights provided on the one surface side of the first transparent substrate. A first transparent electrode for supplying power to the optical LED chip; a second transparent substrate opposed to the one surface side of the first transparent substrate; and a first transparent substrate in the second transparent substrate A plurality of second visible light LED chips mounted on the one surface side which is the opposing surface, and a second power supply for supplying power to the plurality of second visible light LED chips provided on the one surface side of the second transparent substrate. Each of the visible light LED chips is formed by forming an LED thin film portion made of a nitride semiconductor material, an anode electrode, and a cathode electrode on the lower surface side of a cone made of hexagonal pyramidal ZnO crystals. The first visible light LED chip anode electrode and the cap Each of the electrode electrodes is bonded to the first transparent electrode via a bump, and each of the anode electrode and the cathode electrode of the second visible light LED chip is bonded to the second transparent electrode via a bump. A double-sided light emitting device.
  2.   A fine concavo-convex structure for improving light extraction efficiency is formed on the surface of the LED thin film portion of the first visible LED chip on the first transparent substrate side, and the LED of the second visible LED chip 2. The double-sided light emitting device according to claim 1, wherein a fine uneven structure for improving light extraction efficiency is formed on the surface of the thin film portion on the second transparent substrate side.
  3.   A first underfill portion made of a first translucent resin is provided in a gap between the first visible light LED chip and the first transparent substrate, and the second visible light LED chip and the The double-sided light emitting device according to claim 1 or 2, wherein a second underfill portion made of a second translucent resin is provided in a gap between the second transparent substrate and the second transparent substrate.
  4.   A holding frame that holds the first transparent substrate and the second transparent substrate is provided, and a space surrounded by the first transparent substrate, the second transparent substrate, and the holding frame is a vacuum atmosphere or a dry air atmosphere. And a holding frame is provided with a secondary battery for supplying power to the first visible light LED chip and the second visible light LED chip, and a solar battery capable of charging the secondary battery is provided. The double-sided light emitting device according to any one of claims 1 to 3, wherein the double-sided light-emitting device is characterized in that
JP2008321511A 2008-12-17 2008-12-17 Double-sided light-emitting device Pending JP2010147190A (en)

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JP2015524999A (en) * 2012-07-18 2015-08-27 ジースマット カンパニー リミテッドG−Smatt Co., Ltd Transparent lightning plate and manufacturing method thereof
JP2016500462A (en) * 2012-12-05 2016-01-12 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. Flat lighting equipment
CN107301992A (en) * 2010-08-27 2017-10-27 夸克星有限责任公司 Solid-state mating plate or bar for general illumination
CN108417700A (en) * 2018-03-05 2018-08-17 孙爱芬 A kind of LED encapsulation structure of two-sided light extraction
CN107301992B (en) * 2010-08-27 2020-06-19 夸克星有限责任公司 Solid state light sheet or strip for general illumination

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107301992A (en) * 2010-08-27 2017-10-27 夸克星有限责任公司 Solid-state mating plate or bar for general illumination
CN107301992B (en) * 2010-08-27 2020-06-19 夸克星有限责任公司 Solid state light sheet or strip for general illumination
JP2015524999A (en) * 2012-07-18 2015-08-27 ジースマット カンパニー リミテッドG−Smatt Co., Ltd Transparent lightning plate and manufacturing method thereof
JP2016500462A (en) * 2012-12-05 2016-01-12 コーニンクレッカ フィリップス エヌ ヴェKoninklijke Philips N.V. Flat lighting equipment
CN108417700A (en) * 2018-03-05 2018-08-17 孙爱芬 A kind of LED encapsulation structure of two-sided light extraction
CN108417700B (en) * 2018-03-05 2019-10-25 深圳市两岸光电科技有限公司 A kind of LED encapsulation structure of two-sided light out

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