JP2010147138A - Extreme ultraviolet light source device and maintenance method of same - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To determine whether variation of radiation intensity distribution of extreme ultraviolet light is caused by a decrease of light reflectivity of a condenser mirror or for a shift of an optical axis by movement of a light emitting point. <P>SOLUTION: EUV light with a wavelength of 13.5 nm is radiated by flowing a high current of a pulse shape between electrodes 11 and 12, and forming a high temperature plasma region. The EUV light is condensed by a condenser mirror 2 to be incident to an exposure device through an aperture 4. At the time of measurement, radiation intensity distributions of the EUV and light having a wavelength longer than EUV are measured by moving a measurement unit 18 into an optical path. When only the radiation intensity distribution of the extreme ultraviolet light varies, cleaning of the condenser mirror 2 is carried out by recognizing the deposition of tin on a reflection surface of the condenser mirror as a cause of the variation of the radiation intensity distribution. When the radiation intensity distribution of light having a wavelength longer than the extreme ultraviolet light varies, positioning (alignment) or the like of a discharge portion and the condenser mirror is carried out by recognizing the shift of an optical axis as a cause of the variation of the radiation intensity distribution. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

The present invention provides an extreme ultraviolet light source device having a function of determining the cause of a change in the radiation intensity distribution of extreme ultraviolet light collected by a condensing optical means in an extreme ultraviolet light source device that emits extreme ultraviolet light, and The present invention relates to a method for maintaining an extreme ultraviolet light source device based on the determination result.
More specifically, the change in the radiation intensity distribution of extreme ultraviolet light, which occurs when the apparatus is operated for a long time, is caused by a decrease in the light reflectivity of the condensing optical means or due to electrode wear. The present invention relates to an extreme ultraviolet light source device having a function of determining whether a light emission point is moved and an optical axis is shifted, and a maintenance method for the extreme ultraviolet light source device.

With the miniaturization and high integration of semiconductor integrated circuits, improvement in resolving power is demanded in the projection exposure apparatus for production. In order to meet the demand, the exposure light source has been shortened. As a next-generation semiconductor exposure light source following the excimer laser apparatus, extreme ultraviolet light (Extreme) having a wavelength of 13 to 14 nm, particularly a wavelength of 13.5 nm is proposed. An extreme ultraviolet light source device (hereinafter also referred to as EUV light source device) that emits Ultra Violet (hereinafter also referred to as EUV) has been developed.
Several methods are known for generating EUV in an EUV light source device, and one of them is heated to excite EUV radiation that emits EUV to generate a high-temperature plasma, which is emitted from this plasma. There is a method of taking out EUV.
This EUV light source device is roughly classified into an LPP (Laser Produced Plasma) method and a DPP (Discharge Produced Plasma, discharge generated plasma) method according to a high temperature plasma generation method.

In the LPP type EUV light source device, a laser beam is irradiated onto a target made of a raw material containing EUV radiation species. At that time, high temperature plasma is generated by laser ablation, and EUV emitted from the plasma is used.
On the other hand, in the DPP type EUV light source device, high temperature plasma is generated by current driving from a raw material containing EUV radiation species, and EUV light emitted from the high temperature plasma is used. As a discharge method in the DPP type EUV light source device, there are a Z pinch method, a capillary discharge method, a plasma focus method, a hollow cathode trigger Z pinch method, and the like. The DPP type EUV light source device has advantages such as downsizing of the light source device and low power consumption of the light source system as compared with the LPP type EUV light source device, and is expected to be put to practical use.

In both types of EUV light source devices described above, xenon (Xe) ions and tin (Sn) ions of about 10 valences are currently known as radioactive species that emit EUV having a wavelength of 13.5 nm, that is, raw materials for high-temperature plasma. It has been. Among these, tin has a ratio of an electric input necessary for generating high temperature plasma to an EUV output with a wavelength of 13.5 nm, that is, an EUV conversion efficiency (= light output / electric input) several times larger than xenon. Therefore, it is regarded as promising as a radiation type of mass-produced EUV light sources for which high output is required. For example, as disclosed in Patent Document 1, a gaseous tin compound (for example, stannane gas: SnH ₄ gas) In addition, development of an EUV light source using solid or liquid tin as an EUV radiation species is underway.

Hereinafter, a configuration example of the EUV light source apparatus will be described taking the DPP method as an example.
FIG. 14 shows a schematic configuration example of a DPP EUV light source device. As shown in the figure, the DPP EUV light source device has a vacuum container (chamber), and the chamber 10 is divided into a first chamber 10a and a second chamber 10b. In the first chamber 10a, for example, a ring-shaped first electrode (cathode) 11 and a second electrode (anode) 12 sandwich a ring-shaped insulator 13, and the respective through holes are positioned substantially coaxially. Are arranged as follows. Hereinafter, the first electrode 11, the second electrode 12, and the insulating material 13 may be collectively referred to as the discharge part 1.
A raw material containing EUV radiation species is supplied into the first chamber 10a from the raw material supply unit 14 connected to the raw material inlet 14a provided in the first chamber 10a. The raw material is, for example, SnH ₄ gas.

Further, on the second chamber 10b side, a gas exhaust unit 9 for adjusting the pressure in the chamber and exhausting the chamber based on the measured value of the pressure monitor for monitoring the pressure in the chamber (not shown) is provided in the second chamber 10b. It is connected to the gas outlet provided in the.
A condensing mirror 2 is provided in the second chamber 10b. For example, the condensing mirror 2 includes a plurality of concave mirrors whose reflecting surface has a spheroid, a rotating paraboloid, a Walter shape, or the like. These concave mirrors have rotating body shapes with different diameters. The condensing mirror 2 is configured as a grazing incidence type reflecting mirror in which the plurality of concave mirrors are arranged on the same axis so that the rotation center axes are overlapped so that the focal positions substantially coincide with each other.
In addition, the condensing point of this condensing mirror 2 is called an intermediate condensing point (hereinafter referred to as IF).

In such a DPP light source device, when pulse power is supplied from the high voltage pulse power source 15 between the first electrode 11 and the second electrode 12, creeping discharge is generated on the surface of the insulator 13. The first electrode 11 and the second electrode 12 are substantially short-circuited, and a large pulse current flows. At this time, plasma is formed in or near the communication hole formed by the ring-shaped first electrode 11, second electrode 12, and insulator 13 arranged substantially coaxially. Thereafter, a high temperature plasma region is formed at the substantially central portion of the plasma by the pinch effect and Joule heating, and EUV light having a wavelength of 13.5 nm is emitted from the high temperature plasma region.
EUV light having a wavelength of 13.5 nm emitted from the high temperature plasma region is collected by the condenser mirror 2 and taken out from the EUV light take-out unit 7 provided in the second chamber 10b. The EUV light extraction unit 7 is connected to an EUV light incident unit provided in an exposure machine casing of an exposure machine (not shown). That is, the EUV light collected from the EUV collector mirror 2 enters the exposure device via the EUV light extraction unit 7.

Debris is also emitted from the high temperature plasma together with EUV light. Some debris is caused by a metal powder (for example, the first electrode 11 and the second electrode 12) sputtered by plasma and a radioactive seed material such as tin.
When the debris reaches the collecting mirror 2 and collides with or adheres to the reflecting surface of the collecting mirror 2, the reflecting performance of the collecting mirror 2 is impaired.
Therefore, the high temperature plasma region (in the configuration example shown in FIG. 14, the communication hole formed in the ring-shaped first electrode 11, the second electrode 12, and the insulator 13 arranged substantially coaxially or in the vicinity of the communication hole) and light collection. A foil trap 3 is installed between the mirror 2.
The foil trap 3 suppresses the passage of debris while allowing the EUV light to pass. For example, as described in Patent Document 2, the foil trap 3 includes a plurality of plates installed in the radial direction of the high-temperature plasma generation region. .
The pressure in the space in which the foil trap 3 is arranged rises, and the debris that passes through the space is less likely to reach the condenser mirror 2 because the kinetic energy decreases.
Further, the DPP type EUV light source apparatus shown in FIG. 14 has a control unit (not shown). This control unit controls the high voltage pulse power source 15, the material supply unit 14, the gas exhaust unit 9, and the gas supply unit 16 based on an EUV emission command from the exposure unit control unit.
JP 2004-279246 A JP-T-2002-504746

When the EUV light source device is operated for a long time, the EUV radiation intensity distribution measured on the exposure machine side from the intermediate condensing point of the condenser mirror may change with time. As the cause, it can be considered that the EUV reflectivity is lowered due to the tin or the like used for the high temperature plasma raw material adhering to the collector mirror, and the optical axis is shifted due to the change of the light emitting point position due to the wear of the discharge electrode.
If the tin is attached to the collector mirror, the collector mirror must be cleaned. If the optical axis is misaligned, the discharge electrode must be replaced or the discharge electrode and collector mirror aligned. . Thus, for the change in the EUV radiation intensity distribution, different maintenance (maintenance) must be performed depending on the cause. However, until now there was no way to determine which was the cause.
The present invention has been made in view of the above circumstances, and an object of the present invention is that the change in the radiation intensity distribution of extreme ultraviolet light is caused by a decrease in the light reflectance of the condensing optical means, or electrode wear. To provide an extreme ultraviolet light source device having a function of determining whether the optical axis is shifted due to movement of the light emitting point, and a maintenance method for maintaining the extreme ultraviolet light source device based on the determination result It is.

The EUV light source emits not only EUV in the 13.5 nm region but also light in the other wavelength region (out of band), that is, vacuum ultraviolet light, ultraviolet light, visible light, and the like at the same time. ing.
As a result of intensive studies by the inventors, it has been found that the change in the radiation intensity distribution of EUV and out-of-band light (hereinafter also referred to as OoB) differs between the case where tin adheres to the collector mirror and the case where the optical axis shift occurs. discovered. That is,
(1) When tin adheres to the condenser mirror, the reflectivity of EUV decreases, but the reflectivity of light having a longer wavelength than EUV in OoB does not decrease. Therefore, although the EUV radiation intensity distribution changes, the radiation intensity distribution of light having a longer wavelength than EUV does not change.
(2) When the optical axis is shifted due to a change in the emission point position, both the EUV radiation intensity distribution and the radiation intensity distribution of light having a longer wavelength than EUV change.
Therefore, it is possible to determine which is the cause by measuring each radiation intensity distribution of light having a longer wavelength than EUV and comparing it with the radiation intensity distribution in each initial state.

The present inventor found the above phenomenon through the following experiment.
FIG. 1 is a diagram showing an apparatus configuration of an experiment for measuring a radiation intensity distribution downstream of an intermediate condensing point (hereinafter also referred to as IF) of an EUV light source.
In the figure, as the EUV light source, a DPP light source comprising a discharge unit 1 having a first electrode 11, a second electrode 12, and an insulating material 13 provided in a chamber 10 having a gas exhaust unit 9 is used. The EUV emitted from the light source was condensed by the nest-shaped condenser mirror 2. Xe gas and SnH ₄ gas can be used as the discharge medium.
The light condensed on the IF restricts the light beam area and the divergent solid angle by the aperture 4 having a diameter of 4.6 mm arranged in the IF.
A filter 31 is disposed downstream of the aperture 4 disposed in the IF in order to separate EUV and light having a longer wavelength than EUV. In this experiment, a thin film filter of Si / Zr / Si (each film thickness: 50.2 nm) that transmits light of 5 nm to 25 nm was used as the filter 31a for EUV measurement. Further, an optical crystal of MgF ₂ (plate thickness 5 mm) that transmits light of 120 nm or more was used for the filter 31b for measuring light having a wavelength longer than EUV.
The light transmitted through the filter 31 was converted into visible light by a fluorescent screen 32, observed by a CCD camera 33, and analyzed by a personal computer (PC) 34.
In this experiment, CaF ₂ (plate thickness 5 mm) was used for the fluorescent plate 32. CaF ₂ mainly has a property of emitting fluorescence with respect to light of about 400 nm or less. Therefore, light having a longer wavelength than EUV that can be observed with this configuration is light in the wavelength range of about 120 nm to 400 nm.

Using this apparatus, the radiation intensity distribution downstream of the intermediate focal point (IF) was measured. FIG. 2 shows a case in which the positions of the condensing mirror 2 and the aperture 4 are adjusted before the experiment, and light is emitted with Xe gas in the aligned state, that is, light having a longer wavelength than the EUV and EUV in the initial state (OoB ) Radiation intensity distribution. (A) is EUV, (b) is a radiation intensity distribution of light (OoB) having a longer wavelength than EUV.
3 and 4 are typical examples of the radiation intensity distribution when the light source device is operated with SnH ₄ gas and then discharged again with Xe gas. In FIG. 3, only the EUV radiation intensity distribution of (a) changes compared to the initial state of FIG. On the other hand, in FIG. 4, the radiation intensity distribution changes for both the EUV of (a) and the light (OoB) having a longer wavelength than the EUV of (b) with respect to the initial state.

In FIG. 3, the EUV intensity distribution was biased, but light having a longer wavelength than EUV did not change. In order to improve this, alignment adjustment was performed by moving the position and angle of the condenser mirror 2, but the distribution did not return to the distribution shown in FIG. In FIG. 3, it is considered that the EUV reflectance is lowered due to the tin adhering to at least a part of the condenser mirror 2 and the radiation intensity distribution is changed.
In FIG. 4, the EUV and light having a longer wavelength than EUV were biased in intensity distribution. In order to improve this, when the alignment adjustment was performed by moving the position and angle of the condenser mirror 2, it was possible to return to a state close to that before the experiment. Therefore, in FIG. 4, it is considered that the radiation intensity distribution has changed due to the misalignment between the light emitting point and the condenser mirror.

Considering the above experimental results, the reflectance differs between EUV and light having a longer wavelength than EUV with respect to tin adhesion to the condenser mirror 2 (thickness of the adhered tin is considered to be nanometer order). I guess that. Therefore, in order to verify the relationship between the wavelength of light and the reflectance, the following experiment was conducted.
FIG. 5 shows an apparatus configuration of a reflected light measurement experiment for verifying the relationship between the wavelength of light and the reflectance. In the first chamber 10, a ring-shaped first electrode (cathode) 11 and a second electrode 12 attached so as to sandwich the ring-shaped insulator 13 are provided, and the ring-shaped insulator 13 is sandwiched between them. The through-holes are arranged so as to be substantially coaxial.
The Xe gas supply unit 101 is connected to a raw material inlet provided in the first chamber 10a, and a raw material containing Xe gas that becomes an EUV radiation species is supplied into the chamber 10a.
Further, a gas exhaust unit 9 is provided for adjusting the pressure in the chamber and exhausting the chamber.
A concave mirror 102, a sample mirror 103, a filter 104, and a photodiode 105 are provided in the second chamber 10b connected to the first chamber.

In FIG. 5, when pulse power is supplied from the high voltage pulse power source 15 between the first electrode 11 and the second electrode 12, creeping discharge is generated on the surface of the insulator 13, and between the first electrode 11 and the second electrode 12. Is substantially short-circuited and a large pulsed current flows. At this time, plasma is formed in or near the communication hole formed by the ring-shaped first electrode 11, second electrode 12, and insulator 13 arranged substantially coaxially. Thereafter, a high temperature plasma region is formed at the substantially central portion of the plasma by the pinch effect and Joule heating, and EUV light having a wavelength of 13.5 nm is emitted from the high temperature plasma region.
It is known that the Xe discharge used for the light source in FIG. 5 includes not only EUV but also vacuum ultraviolet light and visible light. The light from the Xe discharge was condensed by the concave mirror 102 and applied to the sample mirror 103. As the sample mirror 103, a 12 mm square mirror having a reflecting surface coated with a ruthenium film was used.

Two types of sample mirrors 103 were prepared, one with tin attached and the other with no tin attached. The light reflected by the sample mirror 103 was detected by the photodiode 105 after passing through the filter 104.
The filter 104 was prepared in two types: a zirconium (Zr) thin film that transmits 5 nm to 20 nm, and magnesium fluoride (MgF ₂ ) that transmits 120 nm or more. The photodiode 105 used here has sensitivity at a wavelength of 0.0124 nm to 1100 nm. Therefore, when a Zr filter is used, a region of 5 nm to ₂₀ nm can be measured, and when a MgF ₂ filter is used, a region of 120 nm to 1100 nm can be measured.
Table 1 shows the reflectance of the tin-attached mirror when the reflectance in each wavelength region of the new mirror is 1.0.

As can be seen from Table 1, with light having a longer wavelength than EUV, the reflectance hardly changed even when tin adhered, whereas when EUV adhered, the reflectance was clearly lowered.
From the above experiment, it was confirmed that the reflectance differs between EUV and light having a longer wavelength than EUV with respect to tin adhesion to the condenser mirror 2.
From this, it is possible to determine whether tin has adhered to the reflecting surface of the condenser mirror or whether the optical axis has shifted as follows.
When the illuminance distribution of extreme ultraviolet light changes after the condensing point of the condenser mirror, not only the radiation intensity distribution of extreme ultraviolet light but also the radiation intensity distribution of light having a wavelength longer than that of extreme ultraviolet light is measured. Compare with the radiation intensity distribution in its initial state.
As a result, if only the radiation intensity distribution of extreme ultraviolet light has changed, the cause of the extreme ultraviolet radiation intensity distribution change is that tin has adhered to the reflecting surface of the condenser mirror. Do. In addition, when the radiation intensity distribution of light having a wavelength longer than that of extreme ultraviolet light has also changed, it is assumed that the cause of the extreme ultraviolet radiation intensity distribution change is that the optical axis has shifted, and the discharge part and Align the optical mirror and replace the electrodes.
In addition, when performing alignment (alignment) of a discharge part and a condensing mirror, you may perform a cleaning of a mirror together.
Based on the above, the present invention solves the above problems as follows.
(1) In an extreme ultraviolet light source device, a measuring instrument for measuring the respective radiation intensity distributions of extreme ultraviolet light and light having a longer wavelength than the extreme ultraviolet light contained in the light reflected by the condensing optical means, and this measurement The storage means for storing each radiant intensity distribution measured by the vessel, the stored radiant intensity distribution in the initial state of the extreme ultraviolet light, and the measured radiant intensity distribution of the extreme ultraviolet light are compared and stored. A control unit comprising a comparison means for comparing the radiation intensity distribution in the initial state of light having a wavelength longer than that of extreme ultraviolet light and the radiation intensity distribution of light having a wavelength longer than that of extreme ultraviolet light; Is provided so that it can be inserted into and retracted from the optical path behind the condensing point of the condensing optical means.
(2) A filter that transmits extreme ultraviolet light and a filter that transmits light having a longer wavelength than extreme ultraviolet light are provided in the measuring instrument so as to be switchable.
(3) In the maintenance method of the extreme ultraviolet light source device, the radiation intensity distribution of the extreme ultraviolet light contained in the light reflected by the condensing optical means in the optical path after the condensing point of the condensing optical means, and the extreme ultraviolet The first step of measuring the radiant intensity distribution of light having a wavelength longer than that of light, and the measured radiant intensity distribution of extreme ultraviolet light and the radiant intensity distribution of light having a wavelength longer than that of extreme ultraviolet light are respectively stored. And a second step of comparing with the initial irradiance distribution.
As a result of comparison in the second step, when only the radiation intensity distribution of extreme ultraviolet light changes and the radiation intensity distribution of light having a wavelength longer than that of extreme ultraviolet light does not change, cleaning of the condensing optical means is performed. If both the radiant intensity distribution of extreme ultraviolet light and the radiant intensity distribution of light having a wavelength longer than that of extreme ultraviolet light are changed, the positions of the discharge unit and the condensing optical means are adjusted.

In the present invention, the following effects can be obtained.
(1) A measuring instrument is provided so as to be able to be inserted and retracted in the optical path behind the condensing point of the condensing optical means, and includes extreme ultraviolet light included in the light reflected by the condensing optical means and light having a longer wavelength than the extreme ultraviolet light When the radiation intensity distribution of extreme ultraviolet light changes by measuring the radiation intensity distribution of each and comparing with the radiation intensity distribution of each initial state, the cause is that the raw material (tin) adheres to the reflector Or whether the optical axis deviation between the discharge part and the condenser mirror has occurred, and appropriate maintenance can be performed based on the result.
(2) If only the radiant intensity distribution of extreme ultraviolet light changes and the radiant intensity distribution of light having a wavelength longer than that of extreme ultraviolet light does not change, the condensing optical means is cleaned, and If both the radiant intensity distribution and the radiant intensity distribution of light having a wavelength longer than that of extreme ultraviolet light have changed, the position of the discharge unit and the condensing optical means is adjusted to make it appropriate for the situation. Maintenance can be performed and EUV light generated in the desired state.

FIG. 6 is a diagram illustrating a schematic configuration example of a DPP-type EUV light source apparatus according to an embodiment of the present invention. FIG. 6A shows the overall configuration of the EUV light source apparatus of this embodiment, and FIG. 6B shows an example of the internal configuration of the measurement unit.
6A, the configuration of the discharge unit 1, the chamber 10 and the like for generating EUV is the same as that of FIG. 14, and as described above, the discharge unit 1 is provided in the first chamber 10a. The ring-shaped first electrode (cathode) 11 and the second electrode (anode) 12 are arranged so as to sandwich the ring-shaped insulator 13 and the respective through holes are positioned substantially coaxially.
In addition, a raw material containing EUV radiation species is supplied into the chamber 10a from a raw material supply unit 14 connected to a raw material inlet provided in the first chamber 10a. The raw material is, for example, SnH ₄ gas.

The second chamber 10b is provided with a gas exhaust unit 9 for adjusting the pressure in the chamber and exhausting the chamber, and a condensing mirror (condensing optical means) 2 is provided in the second chamber 10b. . The position of the condenser mirror 2 can be adjusted by the condenser mirror position adjusting mechanism 16.
In addition, a foil trap 3 that suppresses the passage of debris while allowing EUV light to pass therethrough is provided between the condenser mirror 2 and the discharge unit 1.
When pulse power is supplied from the high-voltage pulse power supply 15 between the first electrode 11 and the second electrode 12, a large pulse current flows between the first electrode 11 and the second electrode 12 as described above, and the first Plasma is formed in or near the communication hole formed by the electrode 11, the second electrode 12, and the insulator 13. Thereafter, a high temperature plasma region is formed at the substantially central portion of the plasma by the pinch effect and Joule heating, and EUV light having a wavelength of 13.5 nm is emitted from the high temperature plasma region.
EUV light having a wavelength of 13.5 nm emitted from the high temperature plasma region is condensed by the condenser mirror 2 and enters the exposure device via the IF aperture 4.
Other structures, for example, the configuration of the discharge unit and the vacuum vessel for generating EUV are the same as those in FIG.

A cleaning gas supply nozzle 17a is provided on the EUV light emission side of the condensing mirror 2. When it is determined that the raw material (tin) has adhered to the condensing mirror 2, chlorine as a cleaning gas is supplied from the cleaning gas supply means 17. A halogen gas such as a gas is supplied and flows from the cleaning gas supply nozzle 17a to the condenser mirror 2 to remove tin deposited on the reflecting surface of the condenser mirror.
The intermediate focusing point (IF), which is the focusing point of the focusing mirror 2, is provided with an IF aperture 4 that restricts the light beam area and the divergence solid angle, and more downstream than the EU aperture light and EUV light. A measurement unit 18 for measuring the radiation intensity distribution of each long-wavelength light is provided so as to be insertable / retractable.
Measurement is performed by moving the measurement unit 18 into the optical path during exposure stop such as wafer exchange. During the exposure operation, since EUV light must be supplied to the exposure machine, the measurement unit 18 is retracted to the outside of the optical path.
For this reason, the measurement unit moving mechanism 19 is provided, and the measurement unit 18 is driven by the measurement unit moving mechanism 19 to be inserted and retracted.
The measurement unit moving mechanism 19 is controlled by the measurement control unit 20, and the insertion of the measurement unit 18 is detected by the limit switch 18a.

FIG. 6B shows a configuration example of the measurement unit.
The measurement unit 18 includes a filter 31 for separating EUV light and light having a longer wavelength than EUV light, and a photodetector. For example, the EUV light transmission filter 31a is a Si / Zr / Si (each film thickness 50.2 nm) thin film filter, and the filter 31b that transmits light having a wavelength longer than EUV light is MgF ₂ (plate thickness 5 mm). Crystals are used. Further, a CaF ₂ fluorescent plate 32 and a CCD camera 33 may be used in combination for the photodetector.
When measuring the radiation intensity distribution of EUV light, the filter switching mechanism 31c switches the filter 31 and inserts MgF ₂ into the optical path.
Returning to FIG. 6A, the measurement unit 18 and the measurement control unit 20 are connected via a field through, and the measurement result by the measurement unit 18 is sent to the measurement control unit 20.
The raw material supply unit 14, the high voltage pulse power source 15, the condenser mirror position adjustment mechanism 16, the measurement unit moving mechanism 19, and the measurement control unit 20 are controlled by a light source control unit 21.
Further, an EUV exposure machine (not shown) is controlled by the exposure machine control unit 22, and the light source control unit 21 starts discharge by a discharge start command signal from the exposure machine control unit 22 and stops discharge by a discharge stop command signal.
In the present invention, the measurement unit 18 measures the initial radiation intensity distributions of extreme ultraviolet light and light having a longer wavelength than the extreme ultraviolet light, and stores them in the light source controller 21.
Then, after using the EUV light source device, the measurement unit 18 again measures each radiation intensity distribution of the extreme ultraviolet light and the light having a wavelength longer than the extreme ultraviolet light, and the radiation intensity distribution in each initial state is measured. Compare.
An example of a method for comparing the measured radiation intensity distribution with the stored initial radiation intensity distribution will be described below.

The result obtained by the measurement unit 18 is image data as shown in FIGS. In order to determine such an image change, image processing may be performed and numerical data may be compared.
For example, in the images of FIGS. 2 to 4, as shown in FIG. 8A, the circular distribution is already divided into six equal parts.
As shown in FIG. 7, the condensing mirror 2 has a support structure 2a called a spider for connecting and supporting the condensing mirror 2 composed of a plurality of lens barrels. This is to be reflected above. Using this shadow, the detection values by the CCD camera 33 may be summed for each region.
And the change of light intensity is detectable by plotting the ratio of a measured value and a reference value. Further, as shown in FIG. 8B, the position of the center of gravity of the image may be calculated. By plotting the difference between the measured value and the reference value, it is possible to detect the bias of the radiation intensity distribution.

FIGS. 9 and 10 show the results of image analysis of FIGS.
FIG. 9 is a plot obtained by calculating the center of gravity of the image, and shows the positions of the centers of gravity of (a) EUV and (b) OoB in FIGS. In the same figure, the gravity center positions in FIGS. 2A and 2B overlap.
FIG. 10 is a plot of integrated values of the image divided into six parts. FIG. 10 (a) shows a plot of the integrated values of (a) EUV in FIGS. 2 to 4, and FIG. A plot of the integrated value of (b) OoB in FIGS. In FIG. 2B, the integrated values of OoB in FIGS. 2B and 3B overlap.
However, there is a possibility that a change in the image cannot be detected only with the position of the center of gravity when the light intensity of the entire image is reduced. Therefore, it is possible to grasp the change in the radiation intensity distribution more accurately when the change in the image is determined by combining a plurality of analysis methods.

FIG. 11 and FIG. 12 are flowcharts showing an example of the processing procedure of the present embodiment.
The operation procedure of the EUV light source apparatus in this embodiment will be described with reference to FIG.
It is assumed that the EUV light source device is connected to an EUV exposure machine. The EUV light source device is controlled by the light source control unit, and the EUV exposure machine is controlled by the exposure unit control unit, and the operations of transporting, exposing, and exchanging the workpieces are performed in cooperation with each other.
First, in a state where the light source, the condenser mirror 2 and the IF aperture 4 are aligned, the respective radiation intensity distributions of EUV and light having a longer wavelength than EUV are measured (S101).
The obtained value is stored in the light source control unit 21 as an initial value SI _EUVx of EUV, an initial value SI _OoBx (x = 1 to 6) of light _having a wavelength longer than EUV (S102).
In the exposure machine, the workpiece is transported to a predetermined position to prepare for exposure. After these are completed, a discharge start command signal is sent from the exposure machine controller 22 to the light source controller 21 (S103).
The light source control unit 21 that has received the discharge start command signal operates the high voltage pulse power supply 15 to apply a high voltage pulse between the discharge electrodes 11 and 12. At this time, Sn discharge is generated, and the light condensed by the condenser mirror 2 is supplied to the exposure machine (S104).

The exposure machine performs scan exposure while relatively moving the light irradiation position on the workpiece. After a predetermined exposure process is completed with one workpiece, a discharge stop command signal is sent from the exposure machine controller 22 to the light source controller 21 (S105).
The light source control unit 21 that has received the discharge stop command signal stops the high voltage pulse power supply 15 and waits for the next command (S106).
It is assumed that the light source control unit 21 stores a measurement cycle (T _set ) in advance. The magnitude of the operation time (T) after the previous measurement of the radiation intensity distribution and the measurement period (T _set ) is examined (S107).
If T <T _{set as} a result of the verification, as soon as exposure preparation is completed, a discharge start command signal is sent from the exposure machine control unit 22 to the light source control unit 21, and exposure of the next workpiece is started. That is, the process returns to step S103.
The operations of steps S103 to S107 are repeated to operate the EUV light source and the exposure machine to expose the workpiece.

Here, the result of test step S107, if T ≧ T _{The set,} to check the state of the EUV light source device, performs the radiation intensity distribution measurement of light having a longer wavelength than EUV and EUV (S108).
At this time, the light source control unit 21 sends an inspection start signal to the exposure unit control unit 22 to notify that the operation mode other than exposure is entered. The exposure machine controller 22 that has received the inspection start signal waits until an inspection end signal is received even if the workpiece (wafer) is replaced and exposure preparation is completed. The operation procedure of the radiation intensity distribution measurement will be described later.
The obtained EUV measurements S _EUVx, takes the measured value S _OoBx of light having a longer wavelength than EUV, the initial value SI _EUVx stored in step S102, the ratio of the SI _OoBx. That, S _EUVX / SI _EUVx value of SR _EUVx, as S _OoBx / SI value SR _OoBx of _OoBx, respectively stored in the light source control section 21 (S109). However, x = 1 to 6.

It is assumed that the light source control unit 21 _stores in _advance the allowable ranges of SR _EUVx and SR _OoBx , that is, SR _{EUV -min} , SR _EUV-max , SR _OoB-min , SR _OoB-max . The _magnitudes of SR _EUVX and SR _OoBx stored in step S109 and the allowable range are tested (S110).
As a result of the test, if both EUV and light having a longer wavelength than EUV are within the allowable range, that is, SR _EUV-min <SR _EUVx <SR _EUV-max and SR _OoB-min <SR _OoBx <SR _OoBx-max , As soon as the exposure preparation is completed, a discharge start command signal is sent from the exposure machine controller 22 to the light source controller 21 to start exposure of the next workpiece. That is, the process returns to step S103.
The assay results of steps S110, EUV only unacceptable, i.e., SR _EUV-min ≧ SR _EUVx or SR _EUVx ≧ SR _EUV-max, and, if _{SR OoB-min <SR OoBx <} SR OoB-max, measured The reason for the change in the radiant intensity distribution is that tin has adhered to at least a part of the condenser mirror. Therefore, a cleaning process is performed to remove tin from the condenser mirror (S111). For example, cleaning is performed to remove tin by flowing halogen gas from the cleaning gas supply nozzle 17 a to the surface of the condenser mirror 2.
Since the EUV reflectance of the condenser mirror 2 is restored by the cleaning process, the radiation intensity distribution also returns to the initial value.

When the cleaning process in step S111 is completed, the light source control unit 21 sends an inspection end signal to the exposure unit control unit 22. Upon receipt of the inspection end signal, the exposure machine controller 22 sends a discharge start command signal to the light source controller 21 as soon as exposure preparation is completed, and starts exposure of the next workpiece. That is, the process returns to step S103.
As a result of the verification in step S110, both EUV and light having a wavelength longer than EUV are outside the allowable range, that is, SR _EUV-min ≧ SR _EUVx or SR _EUVx ≧ SR _EUV-max and SR _OoB-min ≧ SR _OoBx or S _{If OoBx} ≧ SR _OoB-max , the measured radiation intensity distribution has changed because the alignment of the light emitting point, the condenser mirror 2 and the IF aperture 4 has changed. Therefore, the alignment is readjusted (S112). For example, alignment is readjusted by adjusting the position of the condenser mirror 2 by the condenser mirror position adjusting mechanism 16.
As a result of the test in step S110, when both EUV and light having a longer wavelength than EUV are out of the allowable range, there is a possibility that only EUV is out of the allowable range. That is, not only the alignment deviation but also tin adhesion to the collector mirror 2 may occur at the same time. In order to confirm this, after performing alignment adjustment in step S112, the radiation intensity distribution measurement of light having a wavelength longer than EUV and EUV is performed again (S113).

The obtained measured values S _EUVx, take the S _OoBx, the initial value SI _EUVx stored in step S102, the ratio of the SI _OoBx. That, S _EUVx / SI _EUVx value of SR _EUVx, as S _OoBx / SI value SR _OoBx of _OoBx, respectively stored in the light source control section 21 (S114). However, x = 1 to 6.
The _magnitudes of SR _EUVx and SR _OoBx stored in step S114 and the allowable range are tested (S115).
As a result of the test, if EUV and light having a wavelength longer than EUV are within the allowable range, that is, SR _EUV-min <SR _EUVx <SR _EUV-max and SR _OoB-min <SR _OoBx <SR _Oob-max , The light source control unit 21 sends an inspection end signal to the exposure unit control unit 22. Upon receipt of the inspection end signal, the exposure machine controller 22 sends a discharge start command signal to the light source controller 21 as soon as exposure preparation is completed, and starts exposure of the next workpiece. That is, the process returns to step S103.
As a result of the verification in step S115, if only EUV is outside the allowable range, that is, SR _EUV-min ≧ SR _EUVx or SR _EUVx ≧ SR _EUV-max and SR _OoB-min <SR _OoBx <SR _OoB-max , measurement is performed The reason for the change in the emitted radiation intensity distribution is that tin has adhered to at least a part of the condenser mirror 2. Therefore, a cleaning process is performed to remove tin from the condenser mirror 2 (S116).
When the cleaning process in step S116 is completed, the light source control unit 21 sends an inspection end signal to the exposure unit control unit 22. Upon receipt of the inspection end signal, the exposure machine controller 22 sends a discharge start command signal to the light source controller 21 as soon as exposure preparation is completed, and starts exposure of the next workpiece. That is, the process returns to step S103.

An example of the operation procedure of the radiation intensity distribution measurement performed in steps S101, S108, and step S113 will be described with reference to FIG.
First, a measurement preparation command signal is sent from the light source control unit 21 to the measurement control unit 20 (S201).
The measurement control unit 20 that has received the measurement preparation command signal operates the measurement unit moving mechanism 19 to move the measurement unit 18 at the standby position. Then, it is positioned at a predetermined measurement position (S202). For example, a linear moving stage on which the measuring unit 18 is mounted is moved by being driven by a stepping motor. Eventually, the stage is detected by the limit switch 18b shown in FIG. When the limit switch 18b is operated, the moving direction of the stage is reversed, and the number of steps (number of pulses) sent from the motor driver to the stepping motor is started. Assume that the measurement unit moving mechanism 19 stores the number of steps up to the measurement position in advance. When the counted number of steps reaches a predetermined number of steps, the movement of the stage is stopped and the positioning is completed.

When the positioning is completed, the measurement control unit 20 sends a measurement preparation completion signal to the light source control unit 21 (S203).
The light source control unit 21 that has received the measurement preparation completion signal operates the high voltage pulse power supply 15 to apply a high voltage pulse between the discharge electrodes 11 and 12. At this time, plasma is generated between the electrodes, and the light collected by the condenser mirror 2 is irradiated onto the light receiving surface of the measurement unit 18 via the IF aperture 4. In order to avoid a change in distribution during measurement due to debris from the light source plasma, it is better to use Xe discharge rather than Sn discharge.
At the same time, the light source controller 21 sends a measurement start command signal to the measurement controller 20 (S204).
The measurement control unit 20 that has received the measurement start command signal operates the CCD camera 33 of the measurement unit 18 to start measurement of the radiation intensity distribution (S205).
Here, when measuring the EUV radiation intensity distribution, the filter switching mechanism 31c is operated to set the EUV transmission filter 31a on the light receiving surface. When measuring the radiation intensity distribution of light having a wavelength longer than EUV, the filter switching mechanism 31c is operated to set a filter 31b that transmits light having a wavelength longer than EUV on the light receiving surface.

Measurement conditions such as the cumulative number of discharges of the CCD camera 33 are stored in advance in the measurement control unit, and measurement is performed under the same conditions every time. When the predetermined measurement is completed, the measurement control unit 20 sends a measurement completion signal to the light source control unit 21. At the same time, the measurement control unit 20 operates the measurement unit moving mechanism 19 to move the measurement unit 18 at the measurement position to the standby position outside the optical path (S206).
The light source control unit 21 that has received the measurement completion signal immediately stops the high voltage pulse power supply 15 and ends the discharge (S207).
The measurement control unit 20 executes an image data analysis program for EUV and light having a longer wavelength than EUV (S208).
In the present embodiment, the image is divided into six by the shadow of the support structure 2a of the condenser mirror 2 called a spider, which is shown in the measurement image, and the total CCD detection value is calculated for each area. The obtained analysis data is sent from the measurement control unit 20 to the light source control unit 21 (S209).
The light source control unit 21 that has received the analysis data stores EUV data as S _EUVx and light data having a wavelength longer than EUV as S _OoBx . However, x = 1-6. _Each time a radiation intensity distribution measurement is performed, S _EUVx and S _OoBx are updated to the latest data. Therefore, in order to hold specific data such as an initial value, an operation for re-storing the data as data with another name in the light source control unit 21 is required.

In the embodiment of FIG. 6, the measurement unit is inserted in the optical path. However, as shown in FIG. 13, a reflection mirror 23 may be inserted to guide the light to the measurement unit.
In FIG. 13, a reflecting mirror 23 and a reflecting mirror moving mechanism 24 are provided instead of the measuring unit moving mechanism 19 shown in FIG. 6, and the measuring unit 18 is attached to the side surface of the chamber 10 and its light incident side. Is provided with a measurement aperture 18b. Other configurations are the same as those shown in FIG. In FIG. 13, the cleaning gas supply nozzle 17a and the like are omitted.
In FIG. 13, at the time of measurement, the reflection mirror 23 is inserted as shown in the figure, and EUV and light having a wavelength longer than EUV collected by the condenser mirror 2 are reflected by the reflection mirror 23 and used for measurement. The light enters the measurement unit 18 through the aperture 18a.

In the present embodiment, the processing shown in FIG. 12 is as follows.
In step S202 of FIG. 12, the reflecting mirror moving mechanism 24 is operated to move the reflecting mirror 23 at the standby position to perform positioning.
Further, in step S206 in the figure, the reflection mirror 23 at the measurement position is moved to the standby position outside the optical path. Other procedures are the same as those in FIG.
The reflection mirror used here may reflect both EUV and light having a longer wavelength than EUV. For example, a smooth surface coated with a multilayer film of Mo and Si, or a film coated with a single layer film of Ru can be used.

It is a figure which shows the apparatus structure of the experiment for measuring the radiation intensity distribution in the downstream of the intermediate | middle condensing point of an EUV light source. It is a figure which shows the radiation intensity distribution of the light of longer wavelength than EUV of an initial state, and EUV in the state which match | combined alignment. It is a figure which shows the case where radiation intensity distribution changes only for EUV because tin adheres to at least one part of a condensing mirror. It is a figure which shows the case where the radiation intensity distribution of EUV and light having a longer wavelength than EUV changes due to the misalignment between the light emitting point and the condenser mirror. It is a figure which shows the apparatus structure of the reflected light measurement experiment for verifying the relationship between the wavelength of light and a reflectance. It is a figure which shows the example of schematic structure of the DPP type EUV light source device which concerns on the Example of this invention. It is a figure which shows the support structure (spider) of a condensing mirror. It is a figure explaining the method for judging the change of an image. It is a figure which shows an example of the figure which computed and plotted the gravity center of the image. It is a figure which shows an example of the figure which plotted the integrated value of the image divided into 6 parts. It is a flowchart which shows an example of the operation | movement procedure of the EUV light source device in a present Example. It is a flowchart which shows an example of the radiation intensity distribution measurement operation | movement in a present Example. It is a figure which shows the modification of the Example of this invention. It is a figure which shows the example of schematic structure of a DPP type EUV light source device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Electric discharge part 2 Condensing mirror 3 Foil trap 4 Aperture
9 Gas exhaust unit 10 Chamber 10a First chamber 10b Second chamber 11 First electrode (cathode)
12 Second electrode (anode)
DESCRIPTION OF SYMBOLS 13 Insulator 14 Raw material supply unit 15 High voltage pulse power supply 16 Condensing mirror position adjustment mechanism 17 Cleaning gas supply means 17a Cleaning gas supply nozzle 18 Measurement unit 19 Measurement unit moving mechanism 20 Measurement control unit 21 Light source control unit 22 Exposure machine control unit DESCRIPTION OF SYMBOLS 23 Reflection mirror 24 Reflection mirror moving mechanism 31 Filter 31a EUV light transmission filter 31b Filter which transmits light with a wavelength longer than EUV light 32 Fluorescent plate 33 CCD camera 31c Filter switching mechanism 101 Xe gas supply means 102 Concave mirror 103 Sample mirror 104 Filter 105 Photodiode

Claims (3)

A container,
A raw material supply means for supplying a raw material for emitting extreme ultraviolet light into the container;
An extreme ultraviolet light source comprising: a discharge part that heats and excites the raw material in the vessel by discharge to generate high temperature plasma; and a condensing optical means that reflects and collects extreme ultraviolet light emitted from the high temperature plasma In the device
The extreme ultraviolet light source device is
A measuring instrument for measuring the respective radiation intensity distributions of light having a longer wavelength than extreme ultraviolet light and extreme ultraviolet light contained in the light reflected by the condensing optical means;
A storage unit that stores the radiation intensity distribution measured by the measuring device, and a control unit that includes a comparison unit that compares the stored radiation intensity distribution with the measured radiation intensity distribution;
The extreme ultraviolet light source device, wherein the measuring instrument is provided so as to be inserted into and retracted from an optical path behind a condensing point of the condensing optical means. The extreme ultraviolet light source device according to claim 1, wherein the measuring instrument includes a filter that transmits extreme ultraviolet light and a filter that transmits light having a longer wavelength than extreme ultraviolet light. A container,
Raw material supply means for supplying a raw material for emitting extreme ultraviolet light into the container, a discharge part for heating and exciting the raw material in the container by discharge to generate high temperature plasma, and an extreme radiated from the high temperature plasma A method for maintaining an extreme ultraviolet light source device including a condensing optical means for reflecting and collecting ultraviolet light,
In the optical path after the condensing point of the condensing optical means, the radiation intensity distribution of extreme ultraviolet light contained in the light reflected by the condensing optical means and the radiation intensity distribution of light having a longer wavelength than the extreme ultraviolet light A first step of measuring
A second step of comparing the measured radiant intensity distribution of extreme ultraviolet light and the radiant intensity distribution of light having a wavelength longer than that of extreme ultraviolet light with the irradiance distribution of each initial state;
In the second step, only the radiation intensity distribution of extreme ultraviolet light is changed, and when the radiation intensity distribution of light having a wavelength longer than that of extreme ultraviolet light is not changed, cleaning of the condensing optical means is performed,
When both the radiation intensity distribution of extreme ultraviolet light and the radiation intensity distribution of light having a wavelength longer than that of extreme ultraviolet light are changed, the position of the discharge unit and the condensing optical means is adjusted. Maintenance method of extreme ultraviolet light source device.

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