JP2010135712A - Wiring board, semiconductor element storage package and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wiring board which has an excellent termination characteristic even in a high frequency band equal to or higher than 20 GHz and in which a semiconductor element mounted thereon normally operates. <P>SOLUTION: The present invention relates to a wiring board 8 comprising: a signal line conductor 2 on one principal surface of a dielectric substrate 1; first ground conductors 3 disposed at both sides of the signal line conductor at intervals; a second ground conductor 3a connected with the first ground conductors 3 inside the dielectric substrate 1; a resistor 4 connecting one end of the signal line conductor 2 and the first ground conductors 3; a bias terminal electrode 5 insulated from the first ground conductors 3; a bias conductor 6 arranged on another principal surface of the dielectric substrate 1 with one end connected to one end of the signal line conductor 2 and the other end connected to the bias terminal electrode 5 respectively via a through conductor 6a; and a radio wave absorber 7 connected to the bias conductor 6 along a length direction. Electromagnetic coupling between the signal line conductor 2 and the bias conductor 6 is small and even during electromagnetic coupling, it is attenuated by the radio wave absorber 7. Therefore, reflection to the signal line conductor 2 is reduced, thereby providing an excellent termination characteristic. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a package for housing a semiconductor element using a wiring board having a function of terminating a high frequency signal by a terminating resistor, and more particularly to a package for housing a semiconductor element and a semiconductor device used in a high frequency band of 20 GHz or more.

  Conventionally, in a package for housing a semiconductor element that contains a semiconductor element that uses a high-frequency signal, in order to convert a termination signal including a high-frequency signal component from electrical energy to thermal energy, and to suppress noise due to reflection of the termination signal, There is one on which a wiring board having a termination resistor is mounted. Such a package for housing a semiconductor element is, for example, a metal substrate having a mounting portion 109a on which a semiconductor element 112 is mounted, as shown in a top view in FIG. 12A and a cross-sectional view in FIG. A metal frame 110 surrounding the mounting portion 109a is joined on 109, and a signal terminal 114 is fixed to a fixing hole 110a provided in the frame 110 by a sealing material 115 such as glass. The signal terminal 114 is electrically connected to the relay substrate 116 mounted on the mounting portion 109a, and the wiring substrate 108 having a termination resistor is mounted with the mounting portion 109a of the semiconductor element 112 interposed therebetween.

  Then, the semiconductor element 112 is mounted on the mounting portion 109a, the relay substrate 116 and the semiconductor element 112 are electrically connected by the bonding wire 117 or the like, and the semiconductor element 112 and the signal line conductor 102 of the wiring board 108 are similarly connected. A semiconductor device is obtained by electrically connecting with bonding wires 117 and bonding and sealing lid 113 to the upper surface of frame 110. The wiring board 108 at this time is, for example, a top view in FIG. 13 (a), a cross-sectional view taken along line AA in FIG. 13 (a), and a bottom view in FIG. 13 (c). The signal line conductor 102 and the same plane ground conductor 103 are formed so as to surround the signal line conductor 102 on the upper surface of the dielectric substrate 101, and a high resistance is provided between the tip of the signal line conductor 102 and the same plane ground conductor 103. A terminal resistor 104 is provided. A ground conductor 103a is formed on the lower surface of the wiring board 108, and the same-surface ground conductor 103 and the ground conductor 103a are connected by a conductor formed on the side surface of the dielectric substrate 101 (for example, see Patent Document 1). reference.).

  In recent years, a bias terminal electrode is provided on a wiring board of such a semiconductor device, and a bias voltage is supplied to the semiconductor element via a signal line conductor of the wiring board, whereby a dedicated terminal or conductor for bias is not provided on the semiconductor element. Thus, it is possible to reduce the size of a semiconductor device or to reduce the size of a semiconductor device by not mounting a circuit board for supplying bias. The bias terminal electrode formed on the wiring board is formed on the upper surface on which the signal line conductor and the ground conductor are formed so that it is easy to connect to the bias terminal and receive supply of a bias voltage from the outside.

JP 2002-319645

  However, if the bias conductor connecting the signal line conductor 102 and the bias terminal electrode is formed on the same upper surface of the dielectric substrate 101, the bias conductor divides the ground conductor 103 on the same surface, and the signal line conductor 102 Therefore, the impedance matching is disturbed and the characteristics are deteriorated. Therefore, in the conventional wiring board having the ground conductor 103a on the lower surface of the dielectric substrate 101, the dielectric substrate 101 is multilayered and the bias conductor is provided inside the dielectric substrate 101.

  If a bias conductor is provided inside the dielectric substrate 101, the signal line conductor 102 is electromagnetically coupled not only to the same-surface ground conductor 103 but also to the ground conductor 103a. The signal line conductor 102 and the bias conductor are electromagnetically coupled in an overlapping part or a part where the distance is short even if they do not overlap, and unnecessary reflection or the like occurs in the signal line conductor 102, resulting in an impedance of the signal line conductor 102. As a result of the change, the transmission characteristics deteriorate, the termination characteristics of the wiring board 108 become insufficient, and the semiconductor element 112 cannot be operated normally.

  The present invention has been completed in view of the above problems, and its object is to provide a wiring board that has good termination characteristics even in a high frequency band of 20 GHz or more and can operate a semiconductor element normally. It is an object of the present invention to provide a high-frequency semiconductor element storage package and a semiconductor device that are used.

  The wiring board according to the present invention includes a dielectric substrate, a signal line conductor disposed on one main surface of the dielectric substrate, and a first ground conductor disposed on both sides of the signal line conductor with a space therebetween. A second ground conductor disposed inside the dielectric substrate and connected to the first ground conductor via a connection conductor; one end of the signal line conductor; and the first ground conductor. A resistor to be connected, a bias terminal electrode disposed on one main surface of the dielectric substrate and insulated from the first ground conductor, and one end disposed on the other main surface of the dielectric substrate A bias conductor connected to the bias terminal electrode via a through conductor, and a radio wave absorber connected to the bias conductor along a length direction; It is characterized by this.

  In the wiring board of the present invention, the length of the portion of the bias conductor that is not connected to the radio wave absorber is less than ¼ of the wavelength of the signal transmitted by the signal line conductor in the above configuration. It is characterized by.

  The package for housing a semiconductor element according to the present invention includes a base having a mounting portion for mounting the wiring board and the semiconductor element on an upper surface, a frame surrounding the mounting portion bonded to the upper surface of the base, and mounted on the mounting portion. The wiring board according to the present invention having any one of the above-described structures, and a bias terminal electrically connected to the bias terminal electrode of the wiring board are provided.

  In the semiconductor element storage package of the present invention, in the above configuration, the base is made of metal and the mounting portion has a recess, and the wiring board of the present invention having the above configuration is configured such that the bias conductor is the It is mounted across the recess so as to be electrically insulated from the base in the recess.

  The package for housing a semiconductor element of the present invention has the above-described configuration, wherein the base is made of metal and has a through-hole penetrating from the upper surface to the lower surface in the mounting portion. However, the bias conductor is mounted so as to be electrically insulated from the base body in the through hole so as to close the through hole.

  In the semiconductor element storage package of the present invention, in the above configuration, the base is made of metal, and the wiring board of the present invention having the above configuration is electrically connected to the base via the bias conductor via a spacer. It is insulated and is mounted on the mounting portion.

  The semiconductor device according to the present invention includes a semiconductor element storage package according to any one of the above-described configurations, and a semiconductor element mounted on the mounting portion and electrically connected to the signal line conductor and the first ground conductor. And a lid joined to the upper surface of the frame.

  According to the wiring board of the present invention, the dielectric substrate, the signal line conductor disposed on one main surface of the dielectric substrate, and the first ground conductor disposed at intervals on both sides of the signal line conductor; A resistor disposed between the first ground conductor and the first ground conductor, the second ground conductor being connected to the first ground conductor via the connection conductor, and one end of the signal line conductor; A bias terminal electrode disposed on one main surface of the dielectric substrate so as to be insulated from the first ground conductor, one end disposed on the other main surface of the dielectric substrate, and one end of the signal line conductor, and Since the other end includes a bias conductor connected to the bias terminal electrode via a through conductor, and a radio wave absorber connected to the bias conductor along the length direction, the bias conductor is connected to the signal line conductor and the signal conductor. Position between the line conductor and the grounding conductor with electromagnetic coupling In addition to the fact that there is a second grounding conductor between the signal line conductor and the bias conductor, the electromagnetic coupling between the signal line conductor and the bias conductor is greatly reduced, and the electromagnetic coupling causes the bias conductor. The unnecessary electric signal is absorbed by the radio wave absorber connected to the bias conductor and attenuated instead of heat energy, so that it is possible to reduce the reflection of the unnecessary electric signal to the signal line conductor. As a result, the transmission characteristic is improved even for a high-frequency signal of 20 GHz or higher, and the wiring board can be obtained with good termination characteristics.

  According to the wiring board of the present invention, in the above configuration, when the length of the portion of the bias conductor not connected to the radio wave absorber is less than ¼ of the wavelength of the signal transmitted by the signal line conductor, Even if the conductor portion of the bias conductor that is not connected to the radio wave absorber is capacitively coupled to the signal line conductor, unnecessary electric signals are attenuated in the bias conductor, so that unnecessary signals are not reflected on the signal line conductor. . As a result, better termination characteristics can be obtained.

  According to the package for housing a semiconductor element of the present invention, a base having a mounting portion for mounting the wiring board and the semiconductor element on the upper surface, a frame surrounding the mounting portion joined to the upper surface of the base, and mounted on the mounting portion Since the wiring board of the present invention having any one of the above structures and a bias terminal electrically connected to the bias terminal electrode of the wiring board are provided, the bias voltage is applied to the semiconductor element via the signal line conductor of the wiring board. In addition, since a good termination characteristic can be obtained by the wiring board of the present invention, it is possible to provide a semiconductor device in which a semiconductor element operates stably even at a high frequency.

  Further, according to the package for housing a semiconductor element of the present invention, in the above configuration, the base is made of metal and the mounting portion has a recess, and the wiring board of any of the above configurations has the bias conductor in the recess. When the semiconductor element is mounted across the recess so as to be electrically insulated from the base body, the heat generated in the semiconductor element can be released well by mounting the semiconductor element on the base body made of metal. Noise from the outside can be shielded and good termination characteristics can be obtained by the wiring board of the present invention. Therefore, mounting the wiring board on a base made of metal causes unnecessary reflection on the signal line conductor. Impedance changes are suppressed, transfer characteristics are improved even for high-frequency signals of 20 GHz or higher, and good termination characteristics can be obtained. It is possible to normally operate in the waves.

  According to the package for housing a semiconductor element of the present invention, in the above configuration, the substrate is made of metal and the mounting portion has a through-hole penetrating from the upper surface to the lower surface. However, when the bias conductor is mounted in the through hole so as to be electrically insulated from the base and close the through hole, the semiconductor element is mounted on the base made of metal to improve the heat generated in the semiconductor element. In addition to being able to emit noise and shielding external noise, good termination characteristics can be obtained by the wiring board of the present invention. Therefore, by mounting the wiring board on a base made of metal, the signal line conductor can be mounted. Impedance changes due to unnecessary reflections can be suppressed, and transfer characteristics can be improved and good termination characteristics can be obtained even for high-frequency signals of 20 GHz or higher. , It is possible to normally operate at a higher frequency the semiconductor element to be mounted.

  According to the package for housing a semiconductor element of the present invention, in the above configuration, the substrate is made of metal, and the wiring substrate of the present invention having any of the above configurations is electrically connected to the substrate via the spacer via the spacer. When insulated and mounted on a mounting part, the semiconductor element can be mounted on a base made of metal, so that heat generated in the semiconductor element can be released well and noise from the outside can be shielded. Since the wiring board of the present invention can provide good termination characteristics, mounting the wiring board on a base made of metal can suppress the occurrence of unnecessary reflection in the signal line conductor and change in impedance. Even with high frequency signals of 20 GHz or higher, transmission characteristics can be improved and good termination characteristics can be obtained, and the mounted semiconductor elements can operate normally even at high frequencies. So that it is Rukoto.

  According to the semiconductor device of the present invention, the semiconductor element storage package of the present invention having any of the above configurations, and the semiconductor element mounted on the mounting portion and electrically connected to the signal line conductor and the first ground conductor Since the lid body bonded to the upper surface of the frame body is provided, good termination characteristics can be obtained by the wiring board of the present invention, so that the semiconductor device can operate stably even at high frequencies.

(A) is a top view which shows an example of embodiment of the wiring board of this invention, (b) is sectional drawing in the AA of (a), (c) is A- of (b). It is sectional drawing in A line, (d) is a bottom view. (A) is a top view which shows the other example of embodiment of the wiring board of this invention, (b) is sectional drawing in the AA of (a), (c) is (b) It is sectional drawing in the AA line, (d) is a bottom view. (A) is a top view which shows the other example of embodiment of the wiring board of this invention, (b) is sectional drawing in the AA of (a), (c) is (b) It is sectional drawing in the AA line, (d) is a bottom view. (A) is a top view which shows the other example of embodiment of the wiring board of this invention, (b) is sectional drawing in the AA of (a), (c) is (b) It is sectional drawing in the AA line, (d) is a bottom view. (A) is a top view which shows the other example of embodiment of the wiring board of this invention, (b) is sectional drawing in the AA of (a), (c) is a bottom view. . (A) is a top view which shows the other example of embodiment of the wiring board of this invention, (b) is sectional drawing in the AA of (a), (c) is a bottom view. . (A) is a top view which shows the other example of embodiment of the wiring board of this invention, (b) is sectional drawing in the AA of (a), (c) is a bottom view. . (A) is a top view which shows an example of embodiment of the semiconductor device of this invention, (b) is sectional drawing in the AA of (a). (A) is a top view which shows the other example of embodiment of the semiconductor device of this invention, (b) is sectional drawing in the AA of (a). (A) is a top view which shows the other example of embodiment of the semiconductor device of this invention, (b) is sectional drawing in the AA of (a). (A) is a top view which shows the other example of embodiment of the semiconductor device of this invention, (b) is sectional drawing in the AA of (a). (A) is a top view which shows an example of embodiment of the conventional semiconductor device, (b) is sectional drawing in the AA of (a). (A) is a top view of the wiring board mounted in the conventional semiconductor device, (b) is a sectional view of the AA line of (a), (c) is a bottom view.

  A wiring board, a semiconductor element storage package, and a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings.

  FIG. 1A is a top view showing an example of an embodiment of a wiring board according to the present invention, and FIG. 1B is a cross-sectional view taken along the line AA in FIG. ) Is a cross-sectional view taken along line AA in FIG. 1B, and FIG. 1D is a bottom view. 2 to 4 are each a top view showing another example of the embodiment of the wiring board of the present invention, and (b) is an AA line of (a), as in FIG. (C) is sectional drawing in the AA of (b), (d) is a bottom view. 5 to 7, (a) is a top view showing an example of an embodiment of the wiring board of the present invention, (b) is a cross-sectional view taken along line AA in (a), and (c) ) Is a bottom view. 1 to 7, 1 is a dielectric substrate, 2 is a signal line conductor, 3 is a first ground conductor, 3a is a second ground conductor, 3b is a connection conductor, 4 is a resistor, and 5 is a bias terminal electrode. , 6 is a bias conductor, 6a is a through conductor, 7 is a radio wave absorber, and 8 is a wiring board.

  The wiring board 8 of the present invention includes a dielectric substrate 1, a signal line conductor 2 disposed on one main surface of the dielectric substrate 1, and a signal line conductor 2, as in the examples shown in FIGS. A first ground conductor 3 disposed on both sides with a gap between them, and a second ground conductor disposed inside the dielectric substrate 1 and connected to the first ground conductor 3 via the connection conductor 3b. 3a, a resistor 4 connecting one end of the signal line conductor 2 and the first ground conductor 3, and a bias terminal disposed on one main surface of the dielectric substrate 1 so as to be insulated from the first ground conductor 3 A bias conductor 6 disposed on the other main surface of the electrode 5 and the dielectric substrate 1 and having one end connected to one end of the signal line conductor 2 and the other end connected to the bias terminal electrode 5 via a through conductor 6a. And a radio wave absorber 7 connected to the bias conductor 6 along the length direction. It is an butterfly. With this configuration, the bias conductor 6 is not located between the signal line conductor 2 and the first ground conductor 3 to which the signal line conductor 2 is electromagnetically coupled, but also the signal line conductor 2 and the bias. The presence of the second ground conductor 3a between the conductor 6 greatly reduces the electromagnetic coupling between the signal line conductor 2 and the bias conductor 6, and unnecessary electric signals generated in the bias conductor 6 due to the electromagnetic coupling are reduced. Since it is absorbed by the radio wave absorber 7 connected to the bias conductor 6 and attenuates instead of heat energy, it is possible to reduce the reflection of unnecessary electrical signals to the signal line conductor 2. As a result, the transmission characteristics are improved even with a high-frequency signal of 20 GHz or higher, and the wiring board 8 can obtain good termination characteristics.

  In the wiring board 8 of the present invention, the length of the portion of the bias conductor 6 that is not connected to the radio wave absorber (indicated by L in FIG. 2) in the above configuration is the signal transmitted by the signal line conductor 2. It is preferably less than ¼ of the wavelength. In such a configuration, even if a portion of the bias conductor 6 that is not connected to the radio wave absorber is capacitively coupled to the signal line conductor 2, an unnecessary electrical signal is attenuated in the bias conductor 6, and thus an unnecessary electrical signal is used. Is not reflected by the signal line conductor 2. As a result, better termination characteristics can be obtained.

The wiring substrate 8 includes a signal line conductor 2 and a first ground conductor on a dielectric substrate 1 made of ceramics such as an aluminum oxide (alumina: Al ₂ O ₃ ) sintered body and an aluminum nitride (AlN) sintered body. 3, a bias conductor 6 and the like are formed.

  1 to 7 show an example in which two signal line conductors 2 of the wiring board 8 are arranged in parallel, but the number of signal line conductors 2 is determined according to the elements and modules used. Therefore, the number of signal line conductors 2 may be one or more than two.

  The connection conductor 3b that connects the first ground conductor 3 and the second ground conductor 3a may be a side conductor formed on the side surface of the dielectric substrate 1 as in the example shown in FIGS. Alternatively, it may be a through conductor penetrating through the dielectric substrate 1 as in the examples shown in FIGS. When the connecting conductor 3b is used as a through conductor and arranged so as to sandwich the signal line conductor 2 as in the examples shown in FIGS. 4 to 7, a pseudo coaxial structure is obtained, and a high-frequency signal can be transmitted better, which is preferable. . At this time, the distance (D1 shown in FIG. 4) between the connection conductors 3b sandwiching the signal line conductor 2 is set to be less than ½ of the wavelength of the signal transmitted by the signal line conductor 2, and along the signal line conductor 2 When the distance between the connection conductors 3b (D2 shown in FIG. 4) arranged below is less than ¼ of the wavelength of the signal to be transmitted, the ground of the grounded coplanar line is further strengthened to suppress higher-order mode resonance. This is preferable because the characteristics can be further improved. For example, if a 40 GHz signal is transmitted to the dielectric substrate 1 using a dielectric having an effective dielectric constant of 9.5, the distance D1 between the connection conductors 3b may be set to about 1.2 mm or less, and D2 may be set to about 0.6 mm or less. .

  In the example shown in FIGS. 1A to 4A, when the wiring board 8 is seen through from above, the bias conductor 6 and the signal line conductor 2 overlap in parallel. In order to further reduce the electromagnetic coupling between the signal line conductor 2 and the bias conductor 6, the shape of the bias conductor 6 is changed and shifted from the signal line conductor 2 as shown in the example of FIG. It is preferable to reduce the overlap with 2. In the example shown in FIG. 6A, the signal line conductor 2 is bent in the vicinity of the end so that the overlap between the signal line conductor 2 and the bias conductor 6 is reduced so that the electromagnetic coupling is further reduced. Yes. Furthermore, although there is a limitation due to the size of the wiring board 8 and the like, if the signal line conductor 2 and the bias conductor 6 do not overlap except at their connection portions as in the example shown in FIG. Most preferable because the bond is the smallest.

  In the example shown in FIGS. 1D, 3D, 4D, 5C, and 6C, the bias conductor 6 is entirely a radio wave absorber. However, if a part thereof is connected to the radio wave absorber 7 as in the example shown in FIGS. 2D and 7C, the above effect can be obtained. Here, the fact that the radio wave absorber 7 and the bias conductor 6 are connected means that they are electromagnetically connected and do not necessarily need to be in physical contact. Specifically, if the distance between the radio wave absorber 7 and the bias conductor 6 is close to the wavelength of the signal transmitted by the signal line conductor 2, it can be regarded as electromagnetically connected. More preferably, if the distance between the radio wave absorber 7 and the bias conductor 6 is ¼ or less of the wavelength of the signal transmitted to the signal line conductor 2, unnecessary electrical signals generated on the bias conductor 6 are absorbed by the radio wave. It is well absorbed by the body 7. Note that it is preferable that the radio wave absorber 7 is in physical contact with the bias conductor 6 because unnecessary electric signals are best absorbed. The length of the portion of the bias conductor 6 not connected to the radio wave absorber 7 is preferably less than ¼ of the wavelength of the signal transmitted by the signal line conductor 2 as described above. The connection length of the portion connected to the radio wave absorber 7 is preferably at least half the wavelength transmitted by the signal line conductor 2 because radio waves can be effectively absorbed. For this reason, the radio wave absorber 7 is connected to the bias conductor 6 along the length direction.

  Further, when the radio wave absorber 7 is disposed between the dielectric substrate 1 and the bias conductor 6 as in the examples shown in FIGS. 3B, 5B, and 6B. The bias conductor 6 is connected to the radio wave absorber 7 only on one main surface, as in the examples shown in FIGS. 1 (b), 2 (b), 4 (b), and 7 (b). When arranged so as to cover the other main surface of the dielectric substrate 1 and the bias conductor 6, the bias conductor 6 is connected to the radio wave absorber 7 at one main surface and the side surface. Further, as shown in the example shown in FIGS. 3B, 5B, and 6B, on the one in which the radio wave absorber 7 is disposed between the dielectric substrate 1 and the bias conductor 6, As shown in the examples shown in FIGS. 1B, 2B, 4B, and 7B, the radio wave absorber 7 is disposed so as to cover the bias conductor 6, and the bias conductor 6 is It may be embedded in the radio wave absorber 7. Since the radio wave absorber 7 only needs to be connected to the bias conductor 6 along the length direction, the radio wave absorber 7 may be connected to the radio wave absorber 7 only on the side surface of the bias conductor 6.

  In the example shown in FIG. 2D, the portion of the bias conductor 6 that is not connected to the radio wave absorber 7 is disposed at both ends of the bias conductor 6, but is disposed at other portions. It doesn't matter. Further, as in the example illustrated in FIG. 7C, the radio wave absorber 7 is provided only in a portion where the signal line conductor 2 and the bias conductor 6 are close to each other, that is, a portion where the bias conductor 6 is easily coupled to the signal line conductor 2. May be arranged. The radio wave absorber 7 is preferably disposed in a portion of the bias conductor 6 that is seen through the wiring board 8 from the upper surface and overlaps the signal line conductor 2 or a portion close to the signal line conductor 2. In the case of disposing a portion that is not connected, it is particularly preferable that the length is less than ¼ of the wavelength of the signal transmitted by the signal line conductor 2 as described above.

  Further, as in the examples shown in FIGS. 1D, 3D, 4D, and 5C, the radio wave absorber 7 is disposed on the entire other main surface of the dielectric substrate 1. Instead, the radio wave absorber 7 may be arranged only in the region where the bias conductor 6 is formed. In this case, one radio wave absorber 7 may be arranged so as to be connected to the plurality of bias conductors 6 and 6 as in the examples shown in FIGS. As in the example shown in (c), a plurality of radio wave absorbers 7, 7 connected to each of the plurality of bias conductors 6, 6 and not connected to each other may be arranged. In the example shown in FIG. 6C, since the plurality of bias conductors 6 are not short-circuited through the radio wave absorber 7, not only the insulative radio wave absorber 7, but also the electroconductive radio wave absorber. 7 can be used. In general, at a high frequency exceeding 10 GHz, the radio wave absorber 7 having a strong dielectric property or a strong conductive property is more effective than the radio wave absorber 7 having a strong magnetic property. Can be used. When the radio wave absorber 7 is formed only around the bias conductor 6 as in the example shown in FIG. 6C, the width of the radio wave absorber 7 indicated by W is wider than that of the bias conductor 6, and the signal line conductor. It is sufficient that the signal (radio wave) transmitted by 2 is wider than ½ of the wavelength in the radio wave absorber 7. Since the wavelength of a 40 GHz radio wave in a substance having a dielectric constant of 26 is about 2 mm, the width W of the radio wave absorber 7 in this case may be 1 mm or more.

The dielectric substrate 1 includes a first dielectric layer 1a and a second dielectric layer made of ceramics such as an aluminum oxide (alumina: Al ₂ O ₃ ) sintered body, an aluminum nitride (AlN) sintered body, and glass ceramics. 1st dielectric layer 1a made of a laminate of dielectric layer 1b or ceramics, polyimide resin, polyphenylene sulfide resin, wholly aromatic polyester resin, BCB (benzocyclobutene) resin, epoxy resin, bismaleimide A second dielectric layer 1b made of an insulating resin such as triazine resin, polyphenylene ether resin, polyquinoline resin, or fluorine resin is laminated. A second ground conductor 3a is formed between the first dielectric layer 1a and the second dielectric layer 1b. The first dielectric layer 1a and the second dielectric layer 1b may be composed of a single dielectric layer, or may be composed of a plurality of dielectric layers. When the dielectric substrate 1 is formed by laminating a first dielectric layer 1a and a second dielectric layer 1b made of ceramics, the first dielectric layer 1a and the second dielectric layer 1b May be produced integrally by co-firing, or may be obtained by joining separately produced first dielectric layer 1a and second dielectric layer 1b.

The first dielectric layer 1a and the second dielectric layer 1b of the dielectric substrate 1 are, for example, as follows when the dielectric substrate 1 is made of alumina (Al ₂ O ₃ ) ceramics. Produced. First, an appropriate organic binder, plasticizer, dispersant, solvent, etc. are added to and mixed with raw material powders such as alumina (Al ₂ O ₃ ), silicon oxide (SiO ₂ ), calcium oxide (CaO), and magnesium oxide (MgO). To make a mud. A ceramic green sheet is obtained by making this into a sheet by a conventionally known doctor blade method or the like. Thereafter, the ceramic green sheet is formed into a predetermined shape by performing an appropriate punching process, and a plurality of pieces are laminated as necessary to produce a formed shape, and this is formed in a reducing atmosphere at a temperature of about 1600 ° C. Manufactured by firing. The generated shape is filled with a raw material powder (such as Al ₂ O ₃ , SiO ₂ , CaO, MgO, etc., and granulated by adding an organic binder if necessary), and press-molded. You may produce the thing of a defined shape.

  When the dielectric substrate 1 of the wiring substrate 8 is made of ceramics, and the first dielectric layer 1a and the second dielectric layer 1b are integrally manufactured by simultaneous firing, the first dielectric layer 1a The metal paste for the signal line conductor 2, the first ground conductor 3, the bias terminal electrode 5, and the resistor paste for the resistor 4 are formed on the upper surface of the ceramic green sheet, and the second ground conductor 3a is disposed on the lower surface. The metal paste is printed and applied by a coating means such as a screen printing method so as to be insulated from the through conductors 6a, and the bias conductor 6 is formed on the lower surface of the ceramic green sheet to be the second dielectric layer 1b. If a metal paste is printed and applied, and a ceramic green sheet to be the first dielectric layer 1a and a ceramic green sheet to be the second dielectric layer 1b are laminated, a generated shape is produced. There. The metal paste for the second ground conductor 3a may be applied by printing on the upper surface of the ceramic green sheet that will be the second dielectric layer 1b. When the connecting conductor 3b is a through conductor, the connecting conductor 3b can be formed by forming a through hole in the ceramic green sheet to be the first dielectric layer 1a and filling the through hole with a metal paste. Similarly, the through conductor 6a may be filled with a metal paste by forming a through hole in the ceramic green sheet serving as the first dielectric layer 1a and the ceramic green sheet serving as the second dielectric layer 1b. In the case where the connection conductor 3b is a side conductor, a metal paste may be printed and applied to the side surface after producing the generated shape. The metal paste is prepared by adding and mixing an appropriate organic binder or solvent to the metal powder. For example, if the first dielectric layer 1a and the second dielectric layer 1b are made of an alumina ceramic, tungsten (W), molybdenum (Mo), manganese (Mn), or the like is used as the metal powder. If the first dielectric layer 1a and the second dielectric layer 1b are made of glass ceramics, copper (Cu), silver (Ag), palladium (Pd), an Ag—Pd alloy, or the like is used. The signal line conductor 2, the first ground conductor 3, the resistor 4, the bias terminal electrode 5, the bias conductor 6, and the side conductor (connection conductor 3b) on the outer surface of the dielectric substrate 1 are obtained by simultaneous firing with the ceramic green sheet. Instead of forming the dielectric substrate 1 having the internal second ground conductor 3a, the through conductor 6a, and the through conductor as the connection conductor 3b formed thereon, the dielectric substrate 1 may be formed by a thin film forming method such as a vapor deposition method. Good. In particular, the resistor 4 is preferably formed by a thin film forming method because the terminal resistance value can be accurately adjusted to a desired value.

  When the dielectric substrate 1 of the wiring board 8 is formed by joining the first dielectric layer 1a and the second dielectric layer 1b made of ceramics separately produced, the signal line conductor 2, the first grounding The conductor 3, the second ground conductor 3a, and the bias terminal electrode 5 are formed by screening a metal paste for these conductors on the ceramic green sheet to be the first dielectric layer 1a or the fired first dielectric layer 1a. The first dielectric layer 1a can be formed by printing and coating by a coating means such as a printing method and baking. The first dielectric layer 1a can be formed by laminating and bonding the second dielectric layer 1b having the bias conductor 6 formed in the same manner. The second ground conductor 3a is formed on the ceramic green sheet to be the second dielectric layer 1b or on the upper surface of the fired second dielectric layer 1b, or on the lower surface of the first dielectric layer 1a and the second dielectric layer. You may form in both the upper surfaces of the layer 1b. The through conductor 6a and the connecting conductor 3b which is a through conductor are formed by forming a through hole in a green sheet and filling the through hole with a metal paste, or through holes formed in the dielectric layers 1a and 1b after firing. It can be formed by filling and baking a metal paste. Also in this case, the signal line conductor 2, the first ground conductor 3, the second ground conductor 3 a, the resistor 4, the bias terminal electrode 5, and the bias conductor 6 pass through the through conductor 6 a and the connection conductor 3 inside. After the first dielectric layer 1a and the second dielectric layer 1b on which the conductor is formed may be fabricated, the first dielectric layer 1a and the second dielectric layer 1b may be formed by a thin film forming method such as a vapor deposition method. In the case where the connection conductor 3b is a side conductor, the first dielectric layer 1a and the second dielectric layer 1b may be stacked and bonded together and then formed by a thin film forming method. In order to join the first dielectric layer 1a and the second dielectric layer 1b, the through conductors 6a formed on the first dielectric layer 1a and the second dielectric layer 1b are connected by a conductive bonding material such as solder or conductive adhesive, May be bonded with an insulating resin such as an epoxy resin, or may be bonded with an anisotropic conductive resin. When the second ground conductor 3a is formed on both the lower surface of the first dielectric layer 1a and the upper surface of the second dielectric layer 1b, the second ground conductors 3a are made of solder, conductive adhesive, or the like. It can be connected with a conductive bonding material.

  When the dielectric substrate 1 of the wiring substrate 8 is formed by laminating the first dielectric layer 1a made of ceramics and the second dielectric layer 1b made of insulating resin, it is manufactured in the same manner as described above. Of the first dielectric layer 1a formed with the signal line conductor 2, the first ground conductor 3, the second ground conductor 3a, the resistor 4, the bias terminal electrode 5, the through conductor 6a, and the connection conductor 3b. A dielectric layer 1b made of an insulating resin as described above is formed on the second dielectric layer 1b so that the through conductor 6a is connected to the through conductor 6a of the first dielectric layer 1a. Then, a bias conductor 6 is formed thereon by a thin film forming method.

  In order to form the second dielectric layer 1b made of insulating resin on the first dielectric layer 1a made of ceramic, for example, when the insulating resin is made of polyimide resin, a varnish-like polyimide precursor is formed. The body is applied to the upper surface of the first dielectric layer 1a by a coating method such as a spin coating method, a die coating method, a curtain coating method, or a printing method, and then cured by heat at about 400 ° C. to be converted into a polyimide. And a thickness of about 10 μm to 100 μm. Alternatively, a resin adhesive such as a siloxane-modified polyamideimide resin, a siloxane-modified polyimide resin, a polyimide resin, a bismaleimide triazine resin, or an epoxy resin is dried on the lower surface of a sheet of about 10 μm to 100 μm made of the insulating resin. The adhesive layer is formed by applying and drying to about 20 μm by a doctor blade method or the like, and this is formed by being heated and pressed on the first dielectric layer 1a. A plurality of insulating resin layers having a thickness of 10 μm to 50 μm may be laminated by repeating coating / curing and heating press to form the second dielectric layer 1b having the above thickness. In the method using a resin for a film, a plurality of films can be pressed at once, and it is not necessary to apply and cure for each layer, so that the manufacturing process can be shortened.

When the through conductor 6a is formed in the second dielectric layer 1b, for example, the through conductor 6a is formed by forming a through hole having a diameter of 20 μm to 100 μm and forming a conductor in the through hole. The through hole is formed by first forming a resist film having an opening on the insulating resin layer and etching the insulating resin layer located in the opening of the resist film, or directly using the laser. It is formed by removing a part of. As the laser at this time, an excimer laser, a CO ₂ laser, or the like can be used. However, the shape of the inner wall of the through hole can be adjusted almost vertically, and the inner wall surface of the through hole can be formed with an ultraviolet laser that can be processed smoothly. Is desirable. Alternatively, in the case of a method of applying a varnish-like resin, a photosensitive resin is used, for example, a portion other than a portion where a through-hole is formed by exposure is cured, and a resin in a portion where the through-hole is formed is obtained. The through hole may be formed by removing by etching. In order to form a conductor in the through hole, for example, the through hole of the insulating resin layer is filled with a conductor paste mainly composed of a metal powder such as copper and a resin, thereby filling the through hole with the conductor. Things are formed. Alternatively, a conductor layer is formed on the exposed surface of the first dielectric layer located on the bottom surface of the through hole and the inner surface of the through hole by a thin film formation method, and copper (Cu ), Gold (Au), nickel (Ni) or the like, a plating film made of a metal having a small electric resistance may be formed. When the thickness of the plating film is increased, the through hole can be filled with a conductor.

When the signal line conductor 2, the first ground conductor 3, the second ground conductor 3 a, the bias terminal electrode 5, and the bias conductor 6 are formed using a thin film forming method, tantalum nitride (Ta ₂ N), nickel-chromium Diffusion prevention made of nickel (Ni), nickel-chromium (Ni-Cr) alloy, palladium (Pd), platinum (Pt), etc. on an adhesion metal layer made of (Ni-Cr) alloy, titanium (Ti), etc. A main conductor layer made of a metal having a low electric resistance such as copper (Cu), gold (Au), nickel (Ni) is formed through the layer. When wiring such as the signal line conductor 2 is formed on the through conductors 6a and the connecting conductors 3b by a thin film forming method, the through conductors 6a and the connecting conductors 3b are exposed from the surface of the dielectric substrate 1. It is preferable to form a surface protective layer such as nickel (Ni) or gold (Au) on the part.

  The terminating resistance value of the resistor 4 is set to a desired value by selecting an appropriate material according to the frequency of the transmitted high-frequency signal and the characteristic impedance of the signal line conductor 2 and appropriately setting its thickness, width and shape. Is set.

The resistor 4 is not particularly limited as long as a predetermined resistance value can be obtained. When the resistor 4 is formed by a thin film forming method, for example, tantalum nitride (Ta ₂ N), nichrome (Ni—Cr alloy). It forms using thin films, such as. In addition, when the resistor paste is formed by printing and baking, a thick film mainly composed of RuO ₂ or the like is used. The resistor paste is mainly composed of an additive such as a glass composition, a conductive material, a resistance value and a metal oxide for the purpose of adjusting temperature characteristics, etc., and these are mixed with an organic vehicle. Examples of the glass composition include a Ca—B—Si—Mn—O based glass composition containing CaO, B ₂ O ₃ , SiO ₂ and MnO. As the conductive material, and ruthenium oxide RuO _2, etc., Ag-Pd alloy, Ag-Pt _{alloy, TaN, WC, LaB 6,} MoSiO 2, TaSiO 2 and metal (Ag, Au, Pt, Pd , Cu, Ni, W, Mo, etc.). Examples of additives such as metal oxides include V ₂ O ₅ , CuO, ZnO, CoO, MnO ₂ , and Mn ₃ O ₄ .

  The radio wave absorber 7 is not particularly limited as long as it can absorb a radio wave having a frequency transmitted by the signal line conductor 2. A magnetic radio wave absorber using magnetic loss, a conductive radio wave absorber using resistance loss, a dielectric A dielectric wave absorber that uses loss can be used. A combination of these may also be used.

  In the magnetic wave absorber, when the frequency is increased, the magnetic field generated in the magnetic body is delayed by the current, and the electromagnetic wave absorbing action appears due to the magnetic loss that works to cancel the current. Examples of magnetic wave absorbers include sintered ferrite, soft magnetic metal, and iron carbonyl, which convert electromagnetic waves into thermal energy and absorb them.

  Dielectric wave absorbers pass almost no direct current, but current flows through the capacitance in the high-frequency region, so that the high-frequency current tends to flow. is there. Examples of the dielectric wave absorber include a resin such as silicone rubber as a base material and a conductive material such as carbon.

  Conductive electromagnetic wave absorbers are those in which the conductive material contained in the dielectric loss type is dispersed and connected to the extent that it has resistance, whereas the conductive material is dispersed independently in the insulator. The electric wave is absorbed by the resistance.

If the radio wave absorber 7 is made of sintered ferrite, for example, it is manufactured as follows. First, an appropriate organic binder, a plasticizer, a dispersant, a solvent, and the like are added to and mixed with a raw material powder containing 50 mol% or more of Fe ₂ O ₃ and NiO to form a slurry. A ferrite green sheet is obtained by making this into a sheet by a conventionally known doctor blade method or the like. At this time, in order to ensure sinterability, it is preferable to use an Fe ₂ O ₃ raw material powder or an NiO raw material powder having an average particle size of 1 μm or less. Then, the ferrite green sheet is formed into a predetermined shape by performing an appropriate punching process, and if necessary, a plurality of sheets are laminated to produce a generated shape, which is fired at 1200 to 1400 ° C. be able to.

  The radio wave absorber 7 made of sintered ferrite thus produced has a signal line conductor 2, a first ground conductor 3, a second ground conductor 3a, a connection conductor 3b, a bias terminal electrode 5, a bias conductor 6, and the like. What is necessary is just to join to the formed dielectric substrate 1. Adhesion made of epoxy resin or anisotropic conductive resin may be used, or a metal layer corresponding to the shape of the bias conductor 6 is formed, and this metal layer and the bias conductor 6 of the dielectric substrate 1 are formed. And may be joined with solder or the like. When the radio wave absorber 7 is disposed between the dielectric substrate 1 and the bias conductor 6, the radio wave absorber 7 having the through conductor 6 a is formed on the dielectric substrate 1 on which the other than the bias conductor 6 is formed. What is necessary is just to join, connecting each other. The bias conductor 6 may be formed on the radio wave absorber 7 after bonding the dielectric substrate 1 and the radio wave absorber 7 or before bonding. In order to join the dielectric substrate 1 and the radio wave absorber 7 while connecting the through conductors 6a to each other, after connecting the through conductors 6a formed to each other with a conductive bonding material such as solder or a conductive adhesive. The periphery may be bonded with an insulating resin such as an epoxy resin or bonded with an anisotropic conductive resin.

The radio wave absorber 7 made of sintered ferrite and the dielectric substrate 1 can be produced by simultaneous firing. For example, if the ferrite raw material powder is 0.1 μm or less, the sintering temperature can be lowered to about 900 ° C. Therefore, a glass ceramic green sheet having the same firing temperature as the dielectric substrate 1 is used. A ferrite green sheet may be laminated on the generated shaped body used. When glass ceramics having a thermal expansion coefficient comparable to that of the radio wave absorber 7 made of sintered ferrite is used as the dielectric layer of the dielectric substrate 1, the dielectric substrate 1 and the radio wave absorber 7 can be fired simultaneously. A substrate with small warpage can be obtained. If the ferrite has the above composition, the thermal expansion coefficient is about 10 × 10 ⁻⁶ / ° C. Instead of laminating the ferrite green sheets, a ferrite paste prepared by adding and mixing an appropriate organic binder, plasticizer, dispersant, solvent, etc. to the raw material powder may be printed and applied. If a ferrite paste is used, it may be formed by applying and firing on the fired dielectric substrate 1. When the radio wave absorber 7 is formed using the ferrite paste, the radio wave absorber 7 is formed so as to cover the bias conductor 6 as in the examples shown in FIGS. 1, 2, 4, and 7.

  For example, for 100 parts by weight of the silicone rubber raw material, 300 to 1500 parts by weight of carbonyl iron powder, an organic solvent, and if necessary, expansive graphite, various vulcanizing agents, vulcanizing aids, vulcanization acceleration The radio wave absorber 7 can also be produced by adding and kneading additives such as an auxiliary agent, a softening agent, an anti-aging agent, a plasticizer, a release agent, a curing agent, a foaming agent, and a coloring agent, and drying. A sheet formed into an appropriate size may be attached to the dielectric substrate 1 on which the signal line conductor 2 or the like is formed, or the kneaded product before drying is formed with wiring such as the signal line conductor 2 or the like. Alternatively, the dielectric substrate 1 may be printed and applied and then dried. The bias conductor 6 may be formed by a thin film formation method or the like after the radio wave absorber 7 is formed by pasting on the dielectric substrate 1 on which the other than the bias conductor 6 is formed, or by printing and applying.

For example, when the first dielectric layer 1a made of an aluminum oxide sintered body having a relative dielectric constant of 9.5 and having a thickness of 0.2 mm is used as the wiring substrate 8, the width of the signal line conductor 2 is increased. The first grounding conductor 3 is formed to the outer peripheral edge of the upper surface of the first dielectric layer 1a with the same thickness, with a thickness of 0.002 mm and a gap of 0.053 mm on both sides. By forming the second ground conductor 3a on the entire lower surface of the body layer 1a and connecting it with the connection conductor 3b, the signal line conductor 2 can be a coplanar line whose impedance is matched to 50Ω. Since the impedance is determined only by the first dielectric layer 1a, the impedance is reduced to 50Ω by forming, for example, the second dielectric layer 1b made of polyimide resin having an arbitrary thickness and a relative dielectric constant of 3.4 on the lower surface. The dielectric substrate 1 can be matched. Further, the resistor 4 which is a terminal resistor is formed so that the resistance value becomes 50Ω. For example, when the resistor 4 is formed as a thin film, the width of the tantalum nitride (Ta ₂ N) thin film is set to 0.1 mm, the length is set to 0.1 mm, and the thickness is set to about 0.1 μm. Resistance value is about 50Ω. If necessary, the resistance value may be adjusted with higher accuracy by removing a part of the formed resistor 4 by laser processing. In the case where the bias conductor 6 having a length of 6 mm and 8 mm is formed on the dielectric substrate 1 having an outer dimension of 8 mm × 6 mm and having a shape as shown in FIG. 1, for example, Fe ₂ O ₃ is used. The electromagnetic wave absorber 7 made of a ferrite sintered body containing about 95% by weight and NiO about 3.5% by weight, having a dielectric constant of 26 and a dielectric loss of 0.31, is set to 8 mm × 6 mm, which is the same as the dielectric substrate 1. 1 mm, and affixed to the lower surface of the dielectric layer 1b and the lower surface of the bias conductor 6 with an insulating adhesive, as shown in FIG. When measuring up to 40 GHz, the maximum value of the reflection loss without the radio wave absorber 7 is −11 dB, whereas the maximum value of the reflection loss is −17 dB.

  Further, a capacitor may be disposed between the resistor 4 and the signal line conductor 2 so that the high-frequency signal of the signal line conductor 2 does not leak into the bias conductor 6. Since the current flowing through the bias conductor 6 is a direct current, the capacitor functions to prevent the current from being cut and flowing into the terminating resistor (resistor 4).

  FIG. 8A is a plan view showing an example of an embodiment of the semiconductor device of the present invention, and FIG. 8B is a cross-sectional view taken along the line AA in FIG. 9 to 11 are respectively plan views showing another example of the embodiment of the semiconductor device according to the present invention, and FIG. 9B to FIG. It is sectional drawing in a line. In these drawings, 8a is a spacer, 9 is a base, 9a is a mounting portion, 9b is a recess, 9c is a through hole, 9d is a base fixing hole, 10 is a frame, 10a is a fixing hole, 11 is a bias terminal, and 12 is A semiconductor element, 13 is a lid, 14 is a signal terminal, 15 is a sealing material, 16 is a relay substrate, and 17 is a bonding wire. In these drawings, the plan view shows a state in which the lid 13 is removed.

  The package for housing a semiconductor element of the present invention mainly includes a base body 9, a frame body 10 bonded to the upper surface of the base body 9, a wiring board 8 mounted on the upper surface of the base body 9 in the frame body 10, and the wiring board 8. The bias terminal 11 is electrically connected to the bias terminal electrode 5. The semiconductor element 12 is mounted on the package for housing the semiconductor element, and the signal line conductor 2 and the first ground conductor 3 of the wiring board 8 are electrically connected. Are connected to each other and sealed by joining the lid 13 to the upper surface of the frame 10 to constitute the semiconductor device of the present invention.

  The semiconductor element storage package of the present invention includes a base body 9 having a mounting portion 9a for mounting the wiring substrate 8 and the semiconductor element 12 on the upper surface, a frame body 10 surrounding the mounting portion 9a joined to the upper surface of the base body 9, and mounting. The wiring board 8 according to the present invention having any one of the above-described configurations mounted on the portion 9a and the bias terminal 11 electrically connected to the bias terminal electrode 5 of the wiring board 8 are provided. . With such a configuration, a bias voltage can be supplied to the semiconductor element 12 via the signal line conductor 2 of the wiring board 8, and good termination characteristics can be obtained by the wiring board 8 of the present invention. A semiconductor device in which the semiconductor element 12 operates stably even at high frequencies can be provided.

  Further, the semiconductor element storage package according to the present invention has the above-described configuration, as shown in the example shown in FIG. 8, in which the base 9 is made of metal and the mounting portion 9a has the recess 9b. The wiring board 8 of the present invention is preferably mounted across the recess 9b so that the bias conductor 6 is electrically insulated from the base body 9 in the recess 9b. In such a configuration, by mounting the semiconductor element 12 on the base body 9 made of metal, heat generated in the semiconductor element 12 can be released well, and noise from the outside can be shielded. Since good termination characteristics can be obtained by the wiring board 8 of the present invention, mounting the wiring board 8 on the base 9 made of metal may cause unnecessary reflection or the like in the signal line conductor 2 and change the impedance. The transmission characteristics are improved even in a high-frequency signal of 20 GHz or more, and a good termination characteristic can be obtained, and the mounted semiconductor element 12 can be normally operated even at a high frequency.

  Further, the package for housing a semiconductor element of the present invention has a through hole 9c that penetrates from the upper surface to the lower surface in the mounting portion 9a, as shown in the example shown in FIG. The wiring board 8 of the present invention having any one of the configurations is mounted on the upper surface of the base 9 so that the bias conductor 6 is electrically insulated from the base 9 in the through hole 9c and closes the through hole 9c. It is preferable. In such a configuration, by mounting the semiconductor element 12 on the base body 9 made of metal, heat generated in the semiconductor element 12 can be released well, and noise from the outside can be shielded. Since good termination characteristics can be obtained by the wiring board of the present invention, mounting the wiring board 8 on the base body 9 made of metal suppresses the occurrence of unnecessary reflection or the like in the signal line conductor 2 to change the impedance. Therefore, even with a high frequency signal of 20 GHz or higher, the transmission characteristics can be further improved and good termination characteristics can be obtained, and the mounted semiconductor element 12 can be normally operated even at high frequencies.

  Further, in the package for housing a semiconductor element of the present invention, the substrate 9 is made of metal as in the examples shown in FIGS. 10 and 11, and the wiring board 8 of the present invention having any of the above-described configurations is provided. It is preferable that the bias conductor 6 is electrically insulated from the base 9 via the spacer 8a and mounted on the mounting portion 9a. In such a configuration, by mounting the semiconductor element 12 on the base 9 made of metal, heat generated in the semiconductor element 12 can be released well and noise from the outside can be shielded. At the same time, good termination characteristics can be obtained by the wiring board 8 of the present invention, so that mounting the wiring board 8 on the base 9 made of metal may cause unnecessary reflection in the signal line conductor 2 and change the impedance. The transmission characteristics are improved even in a high-frequency signal of 20 GHz or more, and a good termination characteristic can be obtained, and the mounted semiconductor element 12 can be normally operated even at a high frequency.

  The semiconductor device of the present invention, as in the examples shown in FIGS. 8 to 11, includes the semiconductor element storage package of the present invention configured as described above, and the signal line conductor 2 and the first ground conductor 3 mounted on the mounting portion 9 a. The semiconductor element 12 is electrically connected to the frame body 10 and the lid body 13 is joined to the upper surface of the frame body 10. With such a configuration, good termination characteristics can be obtained by the wiring board 8 of the present invention, so that a semiconductor device in which the semiconductor element 12 operates stably even at high frequencies can be provided.

The substrate 9 is made of a metal such as an Fe—Ni—Co alloy, a metal such as a Cu—W sintered material, an aluminum oxide sintered body, an aluminum nitride sintered body, or a silicon nitride (Si ₃ N ₄ ) sintered body. It is a plate-like body made of ceramics. In order to release heat generated in the semiconductor element 12 mounted on the mounting portion 9a of the base 9 satisfactorily, it is preferable to use a material having a high thermal conductivity and a high thermal conductivity such as metal or aluminum nitride. In view of cost, those made of metal are preferable. Further, when the base 9 is made of metal, it also functions as a shielding material for shielding external noise, so that the mounted semiconductor element 12 can be operated normally, and the base 9 is made of the semiconductor element 12 or metal. It can be used as a common ground conductor for the signal terminal 14 fixed to the frame 10.

  If the substrate 9 is made of metal, it is manufactured in a predetermined shape by, for example, a conventionally known metal processing method such as rolling or punching a metal ingot, or by performing cutting or the like on an injection molded product. The The concave portion 9b and the through hole 9c may be formed at the same time, or may be formed by cutting the plate-like substrate 9. Further, if the substrate 9 is made of ceramics, it can be manufactured in the same manner as the dielectric substrate of the wiring substrate 8. In this case, the ceramic is usually insulative, and even when the radio wave absorber 7 is disposed between the dielectric substrate 1 and the bias conductor 6, a plurality of bias conductors 6 are connected to each other via the base 9. However, when the wiring board 8 is mounted on the mounting portion 9a, the bias conductor 6 comes into contact with the base 9 and is damaged. In order to prevent this, a recess 9b and a spacer 8a may be provided. The substrate 9 is not limited to a rectangular plate-like body as in the examples shown in FIGS. 8 to 11, and may be a circular or polygonal plate-like body. Further, as in the example shown in FIGS. 8 to 11, for example, a base fixing hole 9 d used for fixing the base 9 to the external substrate by screwing may be provided in the corner portion of the base 9.

  The recess 9b is a recess 9b having an opening having a shape and size so that the wiring board 8 is mounted across the recess 9b so that the bias conductor 6 is electrically insulated from the base body 9 in the recess 9b. I just need it. When the opening size of the recess 9b is made slightly smaller than the wiring board 8 as in the example shown in FIG. 6, the peripheral edge of the wiring board 8 can be bonded and firmly fixed on the base 9 around the recess 9b. it can. For example, if the recess 9b in the example shown in FIG. 6 is extended to the semiconductor element 12 side and the wiring board 8 is fixed on the base body 9 with only three sides of the peripheral edge of the wiring board 8, the signal line conductor 2 and the substrate 9 are not opposed to each other, and even if the substrate 9 is a metal, electromagnetic coupling is not preferable.

  The through hole 9c adheres the peripheral portion of the wiring substrate 8 on the base 9 around the through hole 9c in order to mount the wiring board 8 on the upper surface of the base 9 so as to airtightly close the through hole 9c. What is necessary is just to form the opening dimension of the hole 9c slightly smaller than the wiring board 8. FIG. Specifically, the width from the outer periphery of the through hole 9c to the outer periphery of the wiring board 8 is preferably about 0.3 mm to 1.0 mm over the entire periphery. If it is less than 0.3 mm, it becomes difficult to hermetically seal with the bonding material. On the other hand, if it exceeds 1.0 mm, the area where the signal line conductor 2 and the substrate 9 face each other increases, so the substrate 9 is made of metal. In this case, electromagnetic coupling is easy, and it is difficult to electrically insulate the bias conductor 6 from the base 9.

  The spacer 8 a supports the wiring board 8 so that the bias conductor 6 is electrically insulated from the base 9 and mounts it on the mounting portion 9 a of the base 9. It arrange | positions between the peripheral part and the base | substrate 9 which are not formed. The shape may be a frame shape along the outer shape of the wiring board 8 as in the example shown in FIG. 10, or may be two rod shapes (cuboid shapes) along two opposing sides of the wiring board 8. Alternatively, it may be three or more columnar members that support the wiring board 8 at some positions on the lower surface, and there is no particular limitation. In the case of a columnar shape, a stable support surface is formed by, for example, arranging four wiring boards 8 one by one at the four corners of the wiring board 8 so that the wiring board 8 before fixing can be easily placed on the spacer 8a. It is preferable that the number of wiring boards 8 is three or more. The spacer 8a is preferably disposed at a position that does not oppose the signal line conductor 2 with the dielectric substrate 1 interposed therebetween, because even if the base 9 is made of metal, the spacer 8a is not easily electromagnetically coupled to the signal wiring conductor 2.

  Further, the spacer 8a may be disposed so as to protrude inward from the frame 10 as in the example shown in FIG. In the example shown in FIG. 11, the spacer 8 a protrudes from three locations on the frame 10 so as to support the three locations on the lower surface of the wiring substrate 8, but supports the lower surfaces on the two opposite sides of the wiring substrate 8. As shown in FIG. 11, it may protrude from the opposing inner wall of the frame 10, or three spacers 8 a as shown in FIG.

  The spacer 8a may be manufactured separately from the wiring substrate 8, the base 9, or the frame 10, or may be manufactured integrally with the wiring substrate 8, the base 9, or the frame 10. Also good. If the wiring board 8, the base 9 or the frame 10 is integrated, the step of mounting the spacer 8 a can be omitted when the wiring board 8 is mounted on the base 9. When a brazing material is used to fix the spacers 8 and the spacers 8a, it is not necessary to consider the melting points of a plurality of brazing materials, and this is preferable because the degree of freedom increases. For example, if the spacer 8a is integrated with the base body 9 or the frame body 10 made of metal, the spacer 8a is also formed during the punching or cutting of the metal ingot when the base body 9 or the frame body 10 is manufactured. What is necessary is just to produce simultaneously. Alternatively, for example, if the spacer 8a is integrated with the wiring substrate 8, for example, a frame-shaped ceramic green sheet is laminated to produce a generated shape, or the spacer 8a and the spacer 8a can be formed by a die at the time of press molding. A generated shape having a portion to be formed may be produced. In the case where the spacer 8a protrudes from the frame 10, only the protruding portion may be separately manufactured and joined to the frame 10.

  The spacer 8a is deformed by heating or the like when mounting and fixing the wiring board 8 or the like on the base 9 or the frame 10 made of ceramics, metal, or resin such as epoxy resin similar to the base 9 or the frame 10. What does not need to be used.

  The wiring substrate 8 is mounted on the base 9 by being fixed with an adhesive such as an epoxy resin or a bonding material such as glass or solder. When the wiring substrate 8 is bonded to the base 9 with the recess 8a or the through hole 9c being hermetically sealed, a metal bonding layer is formed on the peripheral portion of the wiring substrate 8 by a thick film method or a thin film method, and Au What is necessary is just to perform sealing by joining to the circumference | surroundings of the recessed part 8a or the through-hole 9c with solder, such as -Sn and Pb-Sn. When the substrate 9 is made of ceramics, a similar metal bonding layer may be formed on the mounting portion 8a.

  If sufficient airtight sealing cannot be achieved by joining the wiring board 8 and the base 9, the lid 9 made of metal or ceramics is joined to the lower surface of the base 9 with solder to close the through hole 9c. May be. In this case, if a step is provided to fit the cover material so that the cover material does not protrude from the lower surface of the base 9, the thickness of the semiconductor element storage package and the semiconductor device does not increase, and the semiconductor device can be It becomes easy to mount on the substrate and apparatus. Alternatively, the inside of the package can be hermetically sealed by airtightly soldering the periphery of the through hole 9c on the lower surface of the base 9 to a substrate or device on which the semiconductor device is mounted.

  When the wiring board 8 is mounted on the base 9 via the spacer 8a, the spacer 8a is fixed on the base 9 with an adhesive or a bonding material, and then the wiring board 8 is fixed on the spacer 8a. Alternatively, after the spacer 8a is fixed to one main surface of the wiring board 8, the spacer 8a may be fixed by being placed on the base 9, and an adhesive or a bonding material is interposed between them. The spacer 8a and the wiring board 8 may be placed and fixed on the base 9 in this order.

  The base body 9 and the frame body 10 surrounding the mounting portion 9a and the concave portion 9b or the through hole 9c of the base body 9 form a container body having a space for accommodating the semiconductor element 12 inside.

  The frame 10 is made of a metal such as an Fe—Ni—Co alloy or Cu—W sintered material similar to the base 9, an aluminum oxide sintered body, an aluminum nitride sintered body, a silicon nitride sintered body, or the like. It consists of ceramics. When the frame 10 is made of ceramics, it is preferable that a conductor layer such as a metallized layer is formed on the surface thereof. The frame body 10 is made of metal or ceramics having a conductor layer formed on the surface thereof, thereby shielding radiation noise generated by the internal semiconductor element 12 or radiation noise entering from the outside of the frame body 10. can do.

  In the case where the base 9 and the frame 10 are made of metal, the base 9 and the frame 10 are integrally molded at the same time, or the frame 10 produced by a metal processing method such as punching is formed on the base 9 by Ag brazing or the like. It can be produced by brazing with a brazing material or joining by a welding method such as a seam welding method. When one of the substrate 9 and the frame 10 is made of ceramics and the other is made of metal, a metal layer is formed on the joint surface made of ceramics by metallization or the like. It can be produced by joining by a welding method of (1) or directly by a brazing material containing an active metal. If the base body 9 and the frame body 10 are made of ceramics, the base body 9 and the frame body 10 are integrally formed at the same time, or a metal layer is formed on the joint surface of the frame body 10 with the base body 9. It can be produced by joining with a brazing material or directly by a brazing material containing an active metal.

  In the example shown in FIGS. 8 to 11, an input / output signal terminal 14 for inputting a drive signal or the like to the semiconductor element 12 from the outside is installed on the frame body 10. A signal terminal 14 made of a metal such as an Fe—Ni—Co alloy is fixed to a fixing hole 10 a formed on the side surface of the frame 10 through the center of a sealing material 15 made of glass. Alternatively, after fixing the signal terminal 14 in the metal ring with the sealing material 15, the metal ring is fitted into the fixing hole 10a and joined to the fixing hole 10a with a sealing material such as Au-Sn solder or Pb-Sn solder. May be.

  When the substrate 9 and the frame body 10 are made of metal, the Ni layer having a thickness of 0.5 to 9 μm and the Au layer having a thickness of 0.5 to 5 μm, which has excellent corrosion resistance and wettability with the brazing material, are formed on the surface. Are preferably sequentially deposited by plating. Thereby, it is possible to effectively prevent the base body 1 from being oxidatively corroded, and the wiring substrate 8 and the semiconductor element 12 can be favorably bonded with solder. Further, when the base 9 and the frame 10 are made of ceramics, it is preferable to apply a similar plating film to the surface of the metal layer formed on the surface.

  The bias terminal 11 is manufactured by processing a metal such as an Fe—Ni—Co alloy by a metal processing method such as punching, and is fixed in a through hole formed on the side surface of the frame body 10 by glass or the like.

  By electrically connecting the bias terminal electrode 5 and the bias terminal 11 of the wiring board 8 mounted on the upper surface of the base body 9 in the frame 10, the semiconductor element housing package of the present invention is obtained. Electrical connection between the bias terminal electrode 5 and the bias terminal 11 is performed by a bonding wire 17.

  The semiconductor element 12 is an integrated circuit (IC), a large scale integrated circuit (LSI), a laser diode (LD), or a photo diode (PD). The base 9 is mounted on the mounting portion 9a by Ag soldering, Ag-Cu. This is performed by firmly bonding and fixing to the upper surface of the substrate 9 with a brazing material such as brazing, with solder such as Au—Sn solder or Pb—Sn solder, or with an adhesive such as epoxy resin.

  The electrodes of the semiconductor element 12 are electrically connected to the signal line conductor 2 and the first ground conductor 3 of the wiring board 8 via bonding wires 17 respectively. In the example shown in FIGS. 8 to 11, the semiconductor element 12 and the signal terminal 14 are electrically connected via a relay substrate 16 mounted on the upper surface of the base 9 between them. Specifically, the electrode of the semiconductor element 12 and the signal line conductor formed on the upper surface of the relay substrate 16 are electrically connected by the bonding wire 17, and the signal line conductor of the relay substrate 16 and the signal terminal 14 are brazed. They are electrically connected via a conductive adhesive made of, for example.

  The relay substrate 16 has a signal line conductor formed on a dielectric substrate made of ceramics, and can be produced in the same manner as the wiring substrate 8, and can be formed on the substrate 9 in the same manner as the wiring substrate 8. Installed.

  Then, after mounting the semiconductor element 12 on the semiconductor element storage package of the present invention and electrically connecting the semiconductor element 12 to the signal line conductor 2 and the first ground conductor 3 of the wiring board 8, the brazing method is performed. The lid 13 is joined to the upper surface of the frame 10 by a welding method such as seam welding or the like, and the inside of the package is hermetically sealed, so that the semiconductor device of the present invention is obtained.

  The lid 13 is a plate made of a metal such as an Fe-Ni-Co alloy or Cu-W sintered material, or a ceramic such as an aluminum oxide sintered body, an aluminum nitride sintered body, or a silicon nitride sintered body. It is a shape. As in the example shown in FIGS. 8 to 11, if a step is provided on the lower surface of the lid body 13, alignment with the frame body 10 may be facilitated. When the lid 13 is made of ceramic, bonding with a brazing material is possible by forming a metal bonding layer on the peripheral portion of the lower surface by a thick film method or a thin film method.

Note that the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the scope of the present invention. For example, the semiconductor element 12 may be an LN optical modulator equipped with an optical modulation element using a single crystal substrate of LiNbO ₃ (lithium niobate: LN) instead.

1: Dielectric substrate 2: Signal line conductor 3: First ground conductor 3a: Second ground conductor 3b: Connection conductor 4: Resistor 5: Bias terminal electrode 6: Bias conductor 6a: Through conductor 7: Radio wave absorber 8: Wiring board 8a: Spacer 9: Base body 9a: Mounting portion 9b: Recess 9c: Through hole 9d: Base fixing hole
10: Frame
10a: fixing hole
11: Bias terminal
12: Semiconductor element
13: Lid
14: Signal terminal
15: Sealing material
16: Relay board
17: Bonding wire

Claims (7)

A dielectric substrate, a signal line conductor disposed on one main surface of the dielectric substrate, a first ground conductor disposed on both sides of the signal line conductor, and an interior of the dielectric substrate A second grounding conductor connected to the first grounding conductor via a connection conductor, a resistor connecting the one end of the signal line conductor and the first grounding conductor, and A bias terminal electrode disposed on one main surface of the dielectric substrate and insulated from the first ground conductor, and one end disposed on the other main surface of the dielectric substrate on the one end of the signal line conductor And a bias conductor having the other end connected to the bias terminal electrode through a through conductor, and a radio wave absorber connected to the bias conductor along the length direction. . 2. The wiring board according to claim 1, wherein a length of a portion of the bias conductor that is not connected to the radio wave absorber is less than ¼ of a wavelength of a signal transmitted by the signal line conductor. The base body which has the mounting part which mounts the said wiring board and a semiconductor element on the upper surface, The frame surrounding the said mounting part joined to the upper surface of this base | substrate, and mounted in the said mounting part. A package for housing a semiconductor element, comprising: the wiring board according to claim 1; and a bias terminal electrically connected to the bias terminal electrode of the wiring board. The wiring board according to claim 1 or 2, wherein the base body is made of metal and has a concave portion in the mounting portion, and the bias conductor is electrically insulated from the base body in the concave portion. 4. The package for housing a semiconductor device according to claim 3, wherein the package is mounted across the recess. 3. The wiring board according to claim 1, wherein the base body is made of metal and has a through hole penetrating from the upper surface to the lower surface in the mounting portion, and the bias conductor is electrically connected to the base body in the through hole. The package for housing a semiconductor device according to claim 3, wherein the package is mounted so as to be electrically insulated and close the through hole. The wiring board according to claim 1 or 2, wherein the base is made of metal, and the bias conductor is electrically insulated from the base via a spacer and mounted on the mounting portion. The package for housing a semiconductor device according to claim 3, wherein: The semiconductor element storage package according to any one of claims 3 to 6, a semiconductor element mounted on the mounting portion and electrically connected to the signal line conductor and the first ground conductor, A semiconductor device comprising: a lid joined to an upper surface of the frame.

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