JP2010135421A - Substrate treatment method and substrate treatment apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treatment apparatus capable of preventing the re-adhesion of contaminant and the like and improving a cleaning treatment effect. <P>SOLUTION: The treatment apparatus includes a treatment tank where each substrate to be treated is erected and stored in a clearance between a pair of confronted first and second erection walls erected by leaving a prescribed interval, a treatment liquid is supplied and the surface treatment of the substrate to be treated is performed. In the first and second erection walls 2b and 3, a first fluid control means is arranged on an inner wall face of either confronted wall. The first fluid control means is formed of dimples a<SB>1</SB>to a<SB>n</SB>changing a flow of the treatment liquid between an inner wall face side where the fluid control means is arranged and a substrate face side of the substrate W to be treated. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a substrate processing method and a substrate processing apparatus, and more particularly to a substrate processing method and a substrate processing apparatus for processing a surface by immersing a thin plate substrate such as a semiconductor substrate or a liquid crystal substrate in a processing tank one by one. Is.

  A substrate such as a semiconductor substrate or a liquid crystal substrate has its substrate surface cleaned with various chemicals and pure water before a semiconductor device or the like is formed. A dedicated substrate processing apparatus is used for this cleaning process.

  This type of substrate processing apparatus stores a predetermined amount of processing liquid (hereinafter also referred to as cleaning liquid) in a processing tank that can accommodate a plurality of substrates to be processed, for example, semiconductor wafers (hereinafter simply referred to as “wafers”), A batch-type substrate processing apparatus that immerses a plurality of wafers at once in this processing solution and performs a cleaning process, and each wafer is placed and fixed on a rotary table. It is roughly classified into a single wafer type substrate processing apparatus that sprays a processing liquid on the wafer surface and performs a cleaning process. These batch type and single wafer type substrate processing apparatuses have respective advantages and problems.

  Batch-type substrate processing equipment can process multiple wafers at a time, which has the advantage of increasing throughput, but on the other hand, multiple wafers are simultaneously immersed in the processing solution in the same processing tank. Therefore, it becomes easy to generate cross contamination in which contaminants removed from one wafer adhere to other wafers and contaminate, and a large amount of processing liquid is used and used processing liquid. There are problems such as increasing the size of the processing equipment and increasing the environmental load. Furthermore, in recent years, the wafer diameter tends to increase from 200 mm and 300 mm to 450 mm, and it is difficult to process the wafer with the increased diameter with this batch type substrate processing apparatus. Is coming.

  On the other hand, since the single wafer processing apparatus processes wafers one by one, there is no problem of cross-contamination that is likely to occur in a batch type substrate processing apparatus, and there are advantages such that the processing liquid can be relatively reduced. However, there is a limit to the throughput increase, and since the wafer is rotated for processing, there is a problem that the pattern on the wafer surface is deformed by the centrifugal force due to the rotation, and so-called pattern collapse is likely to occur. Furthermore, some wafers to be processed have a hydrophobic surface. When pure water of the processing liquid is sprayed on the surface of this hydrophobic wafer, the pure water moves in a granular manner due to the rotation of the wafer and does not spread evenly on the wafer surface. There may be a portion that is efficiently cleaned and a portion that is not cleaned. Eventually, the surface treatment may be uneven, so-called uneven cleaning may occur.

  Therefore, the processing tank is formed to a size that can accommodate a single wafer so that we can try to solve the problems of the current batch-type and single-wafer-type substrate processing equipment, while at the same time taking full advantage of each. A cleaning apparatus has been proposed in which a processing liquid is stored in the processing tank and wafers are immersed and cleaned one by one (for example, see Patent Document 1 below). This cleaning device is also called a single wafer cleaning device.

  With reference to FIG. 19, the single wafer type washing | cleaning apparatus disclosed by the following patent document 1 is demonstrated. FIG. 19 is a schematic view of a single wafer cleaning device disclosed in Patent Document 1 below.

  The single wafer cleaning apparatus 20 includes a single wafer cleaning overflow tank 21 and a supply system 26 for supplying a cleaning liquid to the overflow tank 21. Hereinafter, each structure will be described with reference to a wafer cleaning method using the single wafer cleaning apparatus 20.

First, the wafer W is immersed by the chucking arm in the cleaning chamber 22 in which the cleaning liquid is accommodated. The wafer W is placed and held in the cleaning chamber 22 on a wafer holder 23 having a groove that is slightly wider than the thickness of the wafer W. In this state, when the cleaning liquid is circulated by the circulation pump P, the cleaning liquid passes through the three-way valve V, the filtration filter F, and the three-way valve V, and from a number of outlets of the supply port 24 provided at the bottom of the cleaning chamber 22. It flows into the cleaning room. When the cleaning liquid further flows into the cleaning chamber 22 filled with the cleaning liquid, the excess cleaning liquid overflows over the weir provided in the upper opening of the cleaning chamber 22 and flows into the overflow portion 25. At this time, an upward flow of the cleaning liquid is generated in the cleaning chamber 22, and the contaminants attached to the front and back surfaces of the wafer W are peeled off and cleaned. Next, the separated contaminants are taken away together with the overflowing cleaning liquid, pass through the three-way valve V and the circulation pump P, pass through the filter F and the three-way valve V, and the contaminants in the cleaning liquid are removed by the filter F. Only the cleaning liquid is returned to the cleaning chamber 22 again. In the circulation process of the cleaning liquid, contaminants and the like attached to the wafer W are removed and cleaned.
Japanese Patent No. 2920165 (paragraphs [0009] to [0010], FIG. 1) Japanese Patent No. 3851486 (paragraphs [0039] to [0043], FIG. 6) JP-A-6-104233 (paragraphs [0008] to [0011], FIG. 1) Japanese Unexamined Patent Publication No. 7-86225 (paragraphs [0013] to [0019], FIG. 1)

  The single wafer cleaning apparatus of Patent Document 1 immerses wafers one by one in the cleaning liquid stored in the cleaning tank, and jets the cleaning liquid from the liquid supply port provided at the bottom of the cleaning chamber to generate an upward flow. Then, by bringing this upward flow into contact with the front and back surfaces of the wafer, contaminants attached to the front and back surfaces of the wafer are peeled off and removed. In addition to being able to suppress the collapse, cleaning unevenness can be eliminated, and the problem of cross-contamination that is likely to occur in a batch type substrate processing apparatus can be avoided.

  In this cleaning apparatus, the wafer is cleaning the wafer by the upward flow rising upward from the bottom of the cleaning chamber, but this upward flow is a flow that flows upward from the supply port at the bottom, This flow is almost laminar with no turbulence. However, such a laminar flow cannot provide a high cleaning effect such as cleaning by vortex or turbulent flow. It is known in a batch-type cleaning apparatus that a cleaning process using a vortex or turbulent flow has a higher cleaning effect than a cleaning process using a laminar flow (see, for example, Patent Document 2). In this cleaning apparatus, a plurality of types of flows are formed in the processing tank by disposing a plurality of processing liquid supply means at different positions and switching the processing liquid supply means by the switching means. It has become a thing.

  In particular, in recent years, since semiconductor devices have been further integrated and refined, it has become difficult to cope with such a single wafer cleaning apparatus. In this single wafer cleaning device, contaminants are separated and removed by the upward flow, but some of the contaminants do not overflow from the top due to differences in specific gravity, etc. Even if it is moved, it may return to the cleaning chamber again and reattach to the wafer. A cleaning apparatus that cleans the wafer by a downward flow has also been proposed (see, for example, Patent Documents 3 and 4 above). However, any of these cleaning apparatuses has a laminar downward flow, and a higher cleaning effect cannot be expected.

  The present inventor considers such a problem of the prior art, and the cleaning effect by the vortex flow or turbulent flow employed in the batch type cleaning apparatus has a higher cleaning effect. It was examined whether it could be applied to a single wafer cleaning apparatus provided with a narrow processing tank capable of accommodating only one wafer. As a result, if a flow velocity difference between the wafer side and the cleaning tank wall side, that is, a resistance difference of the water flow through which the processing liquid (cleaning liquid) flows, eddy current or turbulent flow is generated on the wafer side, which is higher. It is thought that the cleaning effect can be obtained, and the processing tank is processed to a size that can accommodate only one wafer, so that the amount of processing liquid to be used can be reduced and the processing unevenness can be eliminated because it is immersed. The present invention has been completed.

  Accordingly, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of preventing the reattachment of contaminants and the like and enhancing the cleaning processing effect.

  Another object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of performing processing without processing unevenness with a small amount of processing liquid.

  In order to achieve the above object, the substrate processing method according to claim 1, the substrate to be processed is erected and accommodated one by one in the processing tank, and the processing liquid is supplied to the substrate. In the substrate processing method for processing a surface, the processing tank is provided with a fluid control means for changing a flow of the processing liquid on an inner wall surface facing at least one substrate surface of the substrate to be processed. The surface of the substrate to be processed is processed by changing the flow of the processing liquid between the inner wall surface provided with the substrate and the substrate surface side of the substrate to be processed.

  According to a second aspect of the present invention, in the substrate processing method according to the first aspect, the flow velocity on the inner wall surface side where the fluid control means is provided is faster or slower than the flow velocity on the substrate surface side, and the substrate surface side is increased. The substrate surface is treated by generating vortex or turbulence.

    According to a third aspect of the present invention, in the substrate processing method according to the first aspect, the flow of the processing liquid is a unidirectional flow that flows in one direction in the processing tank.

  According to a fourth aspect of the present invention, in the substrate processing method according to the third aspect, the one-way flow is a downward flow that flows downward from above in the processing tank.

  6. The substrate processing apparatus according to claim 5, wherein each substrate to be processed is erected and accommodated in a gap between a pair of first and second erected walls that are erected at a predetermined interval and face each other. In addition, in the substrate processing apparatus including a processing tank for supplying a processing liquid and performing a surface treatment of the substrate to be processed, the first and second standing walls are provided on at least one of the opposing inner wall surfaces. A first fluid control means is provided, and the first fluid control means changes the flow of the processing liquid between the inner wall surface side on which the fluid control means is provided and the substrate surface side of the substrate to be processed. It is characterized by being.

  According to a sixth aspect of the present invention, in the substrate processing apparatus according to the fifth aspect, the first fluid control means is configured such that the inner wall surface is formed with a rough surface different from the roughness of the substrate surface to be processed. And

  According to a seventh aspect of the present invention, in the substrate processing apparatus according to the fifth aspect, the first fluid control means is formed of a plurality of dimples.

  According to an eighth aspect of the present invention, in the substrate processing apparatus of the seventh aspect, the plurality of dimples are arranged in a single row at a predetermined pitch in the horizontal direction with a predetermined interval in the standing direction. It is arranged in a plurality of rows.

  According to a ninth aspect of the present invention, in the substrate processing apparatus of the fifth aspect, the first and second standing walls are provided with a second fluid control means on at least one of the opposing inner wall surfaces, The second fluid control means is a protrusion that partially narrows the gap.

  According to a tenth aspect of the present invention, in the substrate processing apparatus according to the ninth aspect, the protrusion is a protrusion weir that partially narrows the gap.

  According to an eleventh aspect of the present invention, in the substrate processing apparatus according to the fifth aspect, the first and second standing walls are provided with a second fluid control means on at least one of the opposing inner wall surfaces, The second fluid control means is characterized in that at least two protruding weirs are provided at predetermined intervals in a direction perpendicular to the standing direction of the wall surface and partially narrowing the gap. And

  According to a twelfth aspect of the present invention, there is provided the substrate processing apparatus according to any one of the fifth to eighth aspects, wherein the first and second standing walls are provided on at least one of the opposing inner wall surfaces. One fluid control means and the second control means according to any one of claims 9 to 11 are provided.

  A thirteenth aspect of the present invention is the substrate processing apparatus according to any one of the first to twelfth aspects, wherein a processing liquid supply means is disposed on tops of the first and second standing walls, and the processing liquid is provided. The processing liquid is supplied from the supply means to the gap between the first and second standing walls, and the surface treatment of the substrate to be processed accommodated between the gap is performed.

  A fourteenth aspect of the present invention is the substrate processing apparatus according to any one of the first to thirteenth aspects of the present invention, wherein the first, A side passage that communicates with a gap provided at the bottom portion between the second standing walls and that rises upward is formed, and the processing liquid that overflows from the upper end portion of the side passage is stored in the outer wall of the side passage. A tank is provided.

  By providing the above configuration, the present invention has the following excellent effects. That is, according to the first and second aspects of the present invention, the surface of the substrate to be processed can be changed only by changing the flow of the processing liquid between the inner wall surface provided with the fluid control means and the substrate surface side of the substrate to be processed. It can be processed efficiently. That is, a higher processing effect is obtained by changing the flow of the processing liquid between the substrate to be processed and the wall surface of the processing tank to generate vortex or turbulence on the substrate to be processed. Further, since the processing tank is processed to a size that can accommodate only one wafer, the amount of processing liquid to be used can be reduced, and the processing unevenness can be eliminated because it is immersed.

  According to the third and fourth aspects of the invention, when the flow is in one direction, it is possible to prevent the reattachment of contamination, while there is an advantage that the flow with respect to the substrate can be easily controlled.

  According to the invention of claim 5, the surface of the substrate to be processed can be efficiently processed with a simple configuration in which the first fluid control means is provided on the wall surface of the standing wall constituting the processing tank. That is, by providing the first fluid control means, a flow change, for example, a flow velocity difference is generated between the substrate to be processed side and the processing tank wall surface side, thereby obtaining a higher processing effect. Further, since the processing liquid flows in one direction to escape from one of the first and second standing wall gaps to the other, the removed contaminants are not returned and reattached. Furthermore, since the processing tank is processed to have a size that can accommodate only one substrate to be processed, the amount of processing liquid to be used can be reduced, and the processing unevenness can be eliminated because it is immersed.

  According to the sixth aspect of the present invention, since the inner wall surface can be easily formed simply by roughing, the treatment tank can be produced at a low cost.

  According to the seventh and eighth aspects of the present invention, the first fluid control means can be easily formed by wall surface processing by constituting it with a plurality of dimples. Further, by arranging the dimple rows arranged in a row at a predetermined pitch in the horizontal direction in a plurality of rows at a predetermined interval in the vertical direction, the liquid flow between the wall surface side and the substrate to be processed is opposed. A resistance difference is generated, and vortex or turbulence can be generated on the substrate to be processed. That is, since this vortex or turbulence is generated when the dimple number exceeds the critical Reynolds number, it can be formed by providing a number of dimples exceeding the critical Reynolds number.

  According to invention of Claims 9-11, the same process effect as the above can be achieved by the protrusion or protrusion weir. The protruding weir can be easily formed by wall processing.

  According to the twelfth aspect of the present invention, the supply of the processing liquid is made a stable amount at a substantially uniform flow rate by the protrusion weir of the first fluid control means, and a predetermined vortex is generated by the second fluid control means. The substrate to be processed can be processed efficiently and uniformly.

  According to the thirteenth aspect of the present invention, the processing liquid supply means is disposed at the top of the first and second standing walls, and the gap between the first and second standing walls extends from the processing liquid supply means. Since the processing liquid is supplied to the substrate, the flow of the processing liquid is a downward flow that flows downward from above, so-called downflow. By this downflow, contaminants and the like on the substrate to be processed are peeled off and discharged from below. Is done. As a result, contaminants and the like do not increase and do not reattach to the substrate to be processed.

  According to the invention of claim 14, since the side path is formed on the outer wall surface of one of the first and second standing walls, and the recovery tank is provided on the outer wall of the side path, It becomes possible to efficiently recover the downflow treatment liquid from the outer tank.

  Hereinafter, the best embodiment of the present invention will be described with reference to the drawings. However, the embodiment described below exemplifies a substrate processing method and a substrate processing apparatus for embodying the technical idea of the present invention, and the present invention is specified to the substrate processing method and the substrate processing apparatus. And other embodiments within the scope of the claims are equally applicable.

With reference to FIG. 1, the outline | summary of the substrate processing apparatus 1 which concerns on Example 1 of this invention is demonstrated. FIG. 1 is a schematic diagram of a substrate processing apparatus common to the first to third embodiments of the present invention. As shown in FIG. 1, the substrate processing apparatus 1 includes a vertically long processing tank 2 in which a single wafer W is accommodated and processed in a state where the wafer W is erected in a vertical direction. Is connected to a recovery / circulation system II that recovers or circulates the used processing liquid discharged from the processing tank 2. In the processing liquid supply system I, the processing liquid supply source S, the three-way valve V ₁ , and the valve V ₂ are connected by pipes L 1 and L ₂ having predetermined thicknesses, respectively, and the pipe L ₂ is connected to the processing liquid supply box 7, This is a supply system in which chemical liquid, pure water, or the like is supplied from the liquid supply source S into the processing tank 2 through the processing liquid supply pipes L1 and L2. The treatment liquid supply source S is a supply source in which a treatment liquid such as hydrofluoric acid, pure water, or hydrogen peroxide is stored. In addition, although the processing tank 2 is divided into the inner tank which accommodates and processes the wafer W, and the outer tank which collect | recovers the process liquid which overflows from this inner tank, in the following description, an inner tank and an outer tank Unless otherwise distinguished, these tanks are collectively referred to as processing tanks. The recovery / circulation system II is connected by a pipe L3, L4 having a predetermined thickness with a _three- way valve V ₃ , a circulation pump P, and a filter F interposed between the exterior discharge hole D ₂ and the three-way valve V ₁ . It is a system that collects and circulates the used processing liquid discharged from the processing tank 2 to the processing tank 2. A discharge hole D ₁ is also formed in the bottom of the treatment tank 2. Each discharge hole D _1, D ₂ of the processing tank 2 is connected to a waste processing apparatus for each type of processing solution which is not shown through a pipe L5.

With this configuration, the processing liquid is supplied to the processing tank 2 from the processing liquid supply source S through the processing liquid supply system I to the processing liquid supply box 7 above the processing tank 2, and the supplied processing liquid is supplied to the processing tank 2. The flow from the upper side to the lower side in the processing tank 2 is a so-called downward flow, and the surface treatment of the wafer W accommodated in the processing tank 2 is performed by this flow. In addition, the used processing liquid is flowed upward from the bottom of the processing tank 2 and stored in the outer tank 6. In addition, the arrow of FIG. 1 shows the flow of the processing liquid outside a processing tank, and the flow is shown with the dotted line within the processing tank. Part of the used processing liquid from the outer tank 6 is fed by the circulation pump P, filtered by the filter F, and returned to the processing tank 2 again. The circulation of the processing liquid is continued, and the surface treatment of the wafer W accommodated in the processing tank 2 is performed. Further, the treatment liquid in the case of pure water, and sent to a waste processing apparatus pure water spent discharged from the discharge hole D ₂ opens the three-way valve V _3. Therefore, when the processing liquid is pure water, new pure water is always supplied to the processing tank 2. The substrate processing apparatus 1 shown in FIG. 1 shows one processing tank 2, but in an actual processing apparatus, several processing tanks are connected to perform a desired cleaning process. For example, when cleaning is performed using four treatment tanks, hydrofluoric acid is contained in the first treatment tank, pure water is contained in the second and fourth treatment tanks, and the third treatment tank is peroxidized. Hydrogen is accommodated and the wafer is cleaned by sequentially feeding the wafer from the first processing tank to the fourth processing tank with a chucking arm. Alternatively, the treatment liquid is supplied in the order of hydrofluoric acid, pure water, hydrogen peroxide, and pure water in each of the four treatment tanks. By providing a plurality of treatment tanks in this manner, a desired cleaning process can be performed, and process productivity, that is, throughput can be increased.

  Hereinafter, the structure of the processing tank 2 and the processing liquid supply box 7 constituting the substrate processing apparatus 1 will be described with reference to FIGS. 2 shows a processing tank constituting the substrate processing apparatus of Example 1, FIG. 2A is a top view of the processing tank, FIG. 2B is a side view (a plurality of points in FIG. 2B are dimple arrangement positions inside the tank) 2C is a bottom view, and FIG. 2D is a side view of FIG. 2B as viewed from one side. 3 is a cross-sectional view taken along line III-III in FIG. 2B. 4 shows a processing liquid supply box, FIG. 4A is a top view of the supply box, FIG. 4B is a side view of the supply box of FIG. 4A viewed from a direction orthogonal to the longitudinal direction, and FIG. 4C is a longitudinal view of the supply box of FIG. It is the side view seen. 5 is a cross-sectional view taken along the line VV of the outer tub shown in FIG.

As shown in FIGS. 2 and 3, the processing tank 2 is erected in a pair with a relatively large opening 2 a provided above and having an area slightly larger than the surface area of the wafer W, with a predetermined interval therebetween. It has vertical plates 2b and 2c, narrow left and right side plates 2d and 2e connecting both side ends of these vertical plates 2b and 2c, and a bottom plate 2f with the bottom closed, and the inside, that is, both vertical plates 2b and 2c. A gap between the two is partitioned by an intermediate vertical plate 3, and an inner tank R ₁ is provided between one vertical plate 2 b and the intermediate vertical plate 3 to accommodate one wafer W standing vertically. It is made of a material having chemical resistance and heat resistance, such as quartz glass, PFA, PTF, and the like. Hereinafter, although the magnitude | size, ie, dimension, of this processing tank 2 is illustrated, this dimension is an example when the wafer W with a diameter of 300 mm is accommodated. Of course, this processing tank can be changed to an arbitrary size, for example, a size applicable to a wafer having a diameter of 450 mm or the like. The pair of vertical plates 2b and 2c and the intermediate vertical plate 3 do not have to be vertical plates in a strict sense, and may be provided upright at a predetermined angle. In the claims, one vertical plate 2b is expressed as a first standing wall, and the middle vertical plate 3 is expressed as a second standing wall.

One vertical plate 2b has a predetermined thickness, a width slightly longer than the width of the wafer W, and a height H1 slightly higher than the height. The wall thickness is 10 mm and the height H1 is 417 mm. The intermediate vertical plate 3 has substantially the same thickness and size as the vertical plate 2b. The intermediate vertical plate 3 has front and back surfaces 3a and 3b, and a gap 5 is formed between the intermediate vertical plate 3 and the bottom plate 2f, and both side ends are coupled to the left and right side plates 2d and 2e. Inner tank R ₁ is a vertical plate 2b, the intermediate vertical plate 3, side plates 2d, surrounded by 2e and the bottom plate 2f is above and is obtained by opening. The thickness of the intermediate vertical plate 3 is 10 mm, and the gap 5 is 20 mm. A gap G1 (see FIG. 6) between the vertical plate 2b and the intermediate vertical plate 3 is 15 mm, and the wafer W is inserted into this gap. When the gap G1 is narrowed, when the wafer W is accommodated, the gaps between the wafer W and the vertical plate 2b and the intermediate vertical plate 3 are also narrowed, and the amount of processing liquid used is processed by rotating the wafer of the prior art. Processing can be performed to the extent that it is substantially the same as or slightly larger than the amount of use of the single wafer processing apparatus. The height of the intermediate vertical plate 3 is shorter than the height H1 of the vertical plate 2b by the amount of the gap 5. The vertical plates 2b and the upper end of the intermediate vertical plate 3, mounting groove 4 is provided with processing liquid supply box 7 for supplying the processing liquid into the inner tank R ₁ is attached. The mounting groove 4, a pair of side plate portions 4 ₁ facing with a gap size of the process liquid supply box 7 is _fitted, and 4 _2, and the bottom plate 4 ₃ connecting the bottom of the side plate portions, the upper It has an opening 4 _0, containing hole 4 ₄ communicating with the inner tank R ₁ in the bottom plate portion 4 ₃ are formed. The housing hole 4 ₄ has a feed hole insertion hole and the treatment liquid wafer W is inserted is supplied to the inner tank R _1.

Processing liquid supply box 7, as shown in FIG. 4, a size to be fitted in the mounting groove 4, of the processing tank 2 in the longitudinal length substantially equal length and inside cavity 7 ₀ a substantially rectangular provided It consists of a cylindrical body and is composed of a resin molded body. This processing liquid supply box 7 has upper and lower plates 7a and 7b, left and right side plates 7c and 7d, and both end plates 7e and 7f in the longitudinal direction, and the surface cut in a direction orthogonal to the longitudinal direction has a substantially rectangular shape. No, internal is in the cavity 7 _0. End plates 7e, 7f, one plate surface or, for example, an opening 9a in communication with the cavity 7 ₀ to one plate 7e is formed, the opening 9a is adapted to be connected to the pipe L2. The opening 9b of the other plate 7f is closed. In the lower plate 7b, as shown in FIG. 4A, a plurality of nozzle holes 7 _{1 to} 7 _1n arranged in a straight line at a predetermined pitch (10 mm) in the longitudinal direction are arranged in a direction perpendicular to the longitudinal direction. They are arranged in two rows with a predetermined interval (4.0 mm). The other rows are nozzle holes 7 _{2 to} 72 _n . The nozzle hole has a size of about several mm. A plurality of gripping bars 8 protrude from the surfaces of the left and right plates 7c and 7d. The gripping bar 8 is used to fit into the mounting groove 4.

Returning to FIG. 3, the other vertical plate 2c has a height substantially the same as the height H1 of the vertical plate 2b. An empty chamber R ₂ is provided between the vertical plate 2 c and the intermediate vertical plate 3. The Check R ₂ is intermediate vertical plate 3 and the vertical plate 2c and the left and right side plates 2d, it is formed by being surrounded by the 2e. The gap between the intermediate vertical plate 3 and the vertical plate 2c constituting the air chamber R ₂ is 30 mm. The Check R ₂ has a flow passage is communicated with the gap 5, the treatment liquid from the inner tank R ₁ flows a rising stream at the bottom (bypass). Incidentally, the height ratio of the rates R ₂ tank thick (intermediate vertical plate 3 and the gap between the vertical plate 2c) and the gap 5 is set to 1 the G1, G1: the gap 5 Height: Check R ₂ The tank thickness is set to be 1: 1 to 3: 1 to 5. Above the outer wall surface of the vertical plate 2c, as shown in FIGS. 3 and 5, an outer tub 6 having a predetermined size is provided. The outer tub 6 is made open 6a upward, outer plate 2h, the inner plate 2c ', the box-shaped container of a predetermined size having a bottom plate 2g and the discharge hole D ₂ and height H3 to the bottom plate 2g, vertical plate 2c It is provided in the position of height H2 from the bottom part. The sum of H2 and H3 is substantially H1. The gap between the inner plate 2c ′ and the outer plate 2h is 35 mm. In addition, a plurality of triangular grooves 6a ′ through which the processing liquid overflows are formed at the top of the vertical plate 2c. The treatment tank 2 is provided with an inner tank R ₁ and an empty room R ₂ inside, and the outer tank 6 is attached to one outer wall surface, whereby the treatment liquid flows in the treatment tank through the following route. First, the processing liquid supply box 7 is mounted in the upper mounting groove 4, and the processing liquid is supplied from the nozzle holes 7 _{1 to} 7 _1n and 7 _{2 to} 72 _{2 n of} the supply pipe 7 to the inner tank R ₁ . Supplied process liquid is lowered the inner tank R ₁ becomes downflow. The lowered processing liquid passes through the gap 5, and flows into the air chamber R _2, pushed are up upward inside the air chamber R _2. The pushed up processing liquid overflows above the vacant chamber R ₂ and is stored in the outer tub 6. Therefore, in this processing tank 2, it is what is called a down flow system flow from which processing liquid flows from the upper part to the lower part. By this down flow, contaminants and the like on the wafer are peeled and removed and discharged from below. As a result, contaminants and the like will not rise and will not reattach to the wafer. In addition, this invention is not limited to this downflow system, You may make it a reverse upflow system depending on a use.

This processing tank 2, the bottom plate 2f, 1 or a plurality of discharge holes D ₁ to discharge the processing solution in the inner tank R ₁ to the outside is formed. These discharge holes D ₁ is connected via a pipe L5 to a waste processing apparatus (not shown). The bottom portion 2g of the outer tub 6, the discharge hole D ₂ is formed.

A plurality of dimples a _{1 to} a _m and b _{1 to} b _m are formed on the opposing wall surfaces of the vertical plate 2b and the intermediate vertical plate 3 as shown in FIG. These dimples spread on the opposing wall surface and are arranged with a predetermined regularity. 6 is an enlarged cross-sectional view of a VI portion in FIG. 3, FIG. 7 shows an arrangement of dimples provided on the wall of the processing tank in FIGS. 2B and 3, and FIG. 7A is a dimple arrangement provided on one vertical plate. FIG. 7B is an array diagram showing dimple array groups provided on the intermediate vertical plate. As shown in FIG. 7A, the regularity of the wall surface of the vertical plate 2b is a plurality of dimple rows A1 (a ₁ , a _{12 to} a _1n ) arranged in a straight line at a predetermined pitch (3 to 50 mm). _{, A2 (a 2, a 22} ~a 2n) ~AM (a m, a m2 ~a mn) is a plurality of rows of A1~AM arranged horizontally with a predetermined gap (3 to 50 mm) in the vertical direction Dimple row group A. Each dimple in the dimple row group A is a circular recess having a diameter of, for example, 0.5 to 5.0 mm and a depth h ₁ (see FIG. 8) of, for example, 0.5 to 2.0 mm. .

As shown in FIG. 7B, similar dimple rows B1 (b ₁ , b _{12 to} b _1n ), B2 (b ₂ , b _{22 to} b _2n ) to BM (b _m , A dimple row group B consisting of b _{m2 to} b _mn ) is provided. Each dimple in the dimple row group B is a circular recess having a diameter of, for example, 0.5 to 5.0 mm and a depth of, for example, 0.5 to 2.0 mm. This regular arrangement is not limited to these arrangements, and can be any pitch and arrangement. For example, the pitch between the dimples does not have to be equal, and the dimple row groups A and B on the opposing wall surfaces do not have to be in the same arrangement. Further, the diameter, depth and shape of the dimple can be changed. Note that the lines connecting the individual dimples in FIGS. 7A and 7B are virtual lines for explanation, and such lines are not actually provided. In the claims,
A plurality of dimples a _{1 to} a _m and b _{1 to} b _m are collectively expressed as first fluid control means.

  The operation of the dimple will be described with reference to FIG. FIG. 8 is an enlarged cross-sectional view schematically showing the portion VIII of FIG. 3 for explanation.

When the processing liquid flows from the upper side to the lower side, i.e., by downflow, eddy currents are generated in the individual dimples _{ai to ai + 2} portions on the surface of the vertical plate 2b. By the generation of the vortex, the flow rate SP ₁ of the treatment liquid flowing in the vicinity of the vertical plate 2b side is SP ₁ flows through so as to slide the vortex becomes faster. This fast flow velocity phenomenon does not occur when the Reynolds number is small, but occurs when a predetermined number, that is, the critical Reynolds number is exceeded. This critical Reynolds number is exceeded by a plurality of dimples provided on the surface of the vertical plate 2b.

When the flow rate SP ₁ of the treatment liquid flowing in the vicinity of the vertical plate 2b side is fast, the flow rate difference between the flow rate SP ₂ flowing in the vicinity of the wafer W surface is generated. In other words, the flow velocity resistance decreases as the flow velocity in the vicinity of the surface of the vertical plate 2b increases, and a resistance difference occurs with the flow velocity resistance in the vicinity of the wafer W. When this resistance difference occurs, an eddy current of the processing liquid is generated in the vicinity of the wafer W, and this eddy current comes into contact with the surface of the wafer W and scrapes off unnecessary substances such as a resist adhering to the wafer surface. If the dimples are not provided, the flow becomes laminar between the wall surface and the wafer surface, the vortex flow as described above does not occur, and the cleaning effect is inferior.

In addition, eddy currents are also generated in the individual dimples b _{i to} b _{i + 2} portions on the surface side of the intermediate vertical plate 3. Due to the generation of this eddy current, the flow velocity of the processing liquid flowing in the vicinity of the intermediate vertical plate 3 surface side is also increased, a resistance difference is generated between the flow velocity resistance in the vicinity of the wafer W, and processing is performed in the vicinity of the wafer W side by the resistance difference. An eddy current of the liquid is generated, and the eddy current comes into contact with the surface of the wafer W to scrape off unnecessary substances such as a resist adhering to the wafer surface. Although the number of dimples shown in FIG. 8 is several, the dimples spread on the opposing wall surface, and as shown in FIG. 7, the dimple row group A, that is, the dimple row A1 (a ₁ , _{a 12 ~a 1n), A2 (} a 2, a 22 ~a 2n) ~AM (a m, since a m2 _{~a mn)} are arranged, the vortex flow generated by the individual dimples in dimple array group The collected turbulent flow is brought into contact with the surface of the wafer W. Similarly, a turbulent flow is generated by the dimple row group B between the wall surface 3 a of the intermediate vertical plate 3 and the surface of the wafer W, and this turbulent flow comes into contact with the surface of the wafer W.

As described above, in the substrate processing apparatus 1 according to the first embodiment, the dimple row group is provided on each wall surface of the vertical plate 2b and the intermediate vertical plate 3 which are opposed to each other in the processing tank 2, so When supplied to the tank R _1, the flow velocity of the liquid flow difference in resistance occurs, the treatment liquid flows near the plate face with each plate 2b, 3 each plate surface opposite to the wafer W side of the And the flow velocity near the wafer W surface side is slow. As a result, a vortex or turbulent flow is generated on the wafer W surface side, and the vortex or turbulent flow contacts the front and back surfaces of the wafer W, so that the front and back surfaces of the wafer W are efficiently and effectively cleaned. Further, since the processing liquid is in a downflow, the removed contaminants are not returned and reattached. In the substrate processing apparatus 1 according to the first embodiment, the dimple row group is provided on each wall surface of the vertical plate 2b and the intermediate vertical plate 3 which are opposed to each other in the processing tank 2. However, the substrate processing apparatus 1 is provided on any one of the wall surfaces. You may make it wash | clean only one side of.

Next, a substrate processing apparatus 1A according to Embodiment 2 of the present invention will be described with reference to FIGS. 9 shows a processing tank constituting the substrate processing apparatus of Example 2, FIG. 9A is a top view of the processing tank, FIG. 9B is a side view (d ₁ to d _{4 in} FIG. 9B are protrusion weirs inside the processing tank) 9C is a bottom view, and FIG. 9D is a side view of FIG. 9B as viewed from one side. 10 is a cross-sectional view taken along line XX in FIG. 9B. FIG. 11 is an enlarged cross-sectional view of a portion XI in FIG.

A substrate processing apparatus 1A according to the second embodiment has substantially the same configuration as the substrate processing apparatus 1 according to the first embodiment shown in FIG. 1, and a partial configuration in the processing tank 2A of the substrate processing apparatus 1A, that is, a vertical configuration. without providing the dimples in the facing wall of the plate 2b and the intermediate vertical plate 3, structure in which a plurality of projections weir _{c 1 ~c 4, d 1 ~d} 4 are different. Therefore, the same reference numerals are assigned to the common configurations, and the description thereof is used, and different configurations will be described in detail.

A substrate processing apparatus 1A according to the second embodiment includes a processing tank 2A. As shown in FIGS. 9 and 10, the treatment tank 2A has a plurality of, for example, four protrusion weirs c _{1 on} the opposing wall surfaces of the vertical plate 2b and the intermediate vertical plate 3 with predetermined intervals in the horizontal direction. to c ₄ and _d 1 to d ₄ are provided. Since the plurality of protrusion weirs c _{1 to} c ₄ and d _{1 to} d ₄ have the same structure, the protrusion weirs c _{1 to} c ₄ provided on one vertical plate 2b will be described.

The wall surface of the vertical plate 2b, 4 pieces of protrusions weir c ₁ to c ₄ are arranged in the horizontal direction at a predetermined interval H4. H4 is 100 mm. These protrusion weirs c _{1 to} c ₄ have the same shape. Projections weir c ₁ of one of them, as shown in FIG. 11, has a height h ₂ of the top consists of raised ridge-like projection in a curved shape from the vertical plate 2b surface. That is, the raised curved is a circle with a diameter of 25 mm, a portion of raised from the vertical plate 2b surface, top height _{h 2} is a 2.5 mm. Since the protrusion weirs are provided on the respective wall surfaces of the vertical plate 2b and the intermediate vertical plate 3, the gap G2 between the two protrusion weirs is narrower than the gap G1 to 10 mm (G1 is 15 mm). In the claims, the protrusion weirs c _{1 to} c ₄ and d _{1 to} d ₄ are collectively expressed as second fluid control means.

Next, the operation of this protrusion weir will be described. When the processing liquid flows into the inner tank R ₁ downward from the processing liquid supply box 7, that is, by downflow, the processing liquid collides with the first protrusion weir c ₁ , and a part of the processing liquid temporarily stops. It is done. As shown in FIGS. 9B and 10, the protrusion weir c ₁ is a weir that is continuous from the width direction of the vertical plate wall 2 b, that is, from one end to the other end in the horizontal direction, so that the processing liquid is blocked in this width direction. . By this damming, regardless of the distance from the processing liquid supply box 7, that is, the distance from the nozzle of the processing liquid supply box 7, the processing liquid is substantially uniform and passes between the gaps G <b> 2. Since this gap G2 is narrower than the gap G1, the space between the vertical plate wall 2b surface and the wafer W surface is narrowed to form a bottleneck, and the processing liquid passes through this bottleneck. That is, the dammed processing liquid passes through the narrow gap between the top of the protrusion dam c ₁ and the wafer W and flows toward the protrusion dam c ₂ downstream. This flowed treatment liquid passes through the narrow path formed by the protrusion weir c ₂ again dressed stored temporarily between adjacent projections weir c _1, c ₂ at the next projection weir c ₂ protruding weir c _2, c It looks like it was temporarily stored between ₃ and thereafter passes through each protrusion weir in the same manner. The flow rate of this treatment liquid is increased when passing through the bottleneck, and between the protruding weirs after passing, the flow rate is reduced and at the same time the flow changes in a complex manner. As a result, turbulence is generated. Then, unnecessary materials on the surface of the wafer W are peeled and removed. Note that the treatment liquid does not stay between the protrusion weirs, but flows away at any time.

In the substrate processing apparatus 1A according to the second embodiment, vortex or turbulent flow is generated on the wafer W surface side only by providing a protruding weir on each of the opposing vertical plates 2b and intermediate vertical plates 3 of the processing tank 2A. The vortex or turbulent flow contacts the front and back surfaces of the wafer W, and the front and back surfaces of the wafer W are efficiently and effectively cleaned. Further, since the processing liquid is in a downflow, the removed contaminants are not returned and reattached. The protrusion weirs c _{1 to} c ₄ and d _{1 to} d ₄ are provided at the opposed positions of the vertical plate 2 b and the intermediate vertical plate 3, but they may be provided in a staggered manner with their positions shifted from each other.

Next, a substrate processing apparatus 1B according to Embodiment 3 of the present invention will be described with reference to FIGS. Note that FIG. 12 shows a processing tank of the substrate processing apparatus of the third embodiment, FIG. 12A is a top view of the treatment tank, FIG. 12B is a side view (of points e.g. b ₁ in FIG. 12B is the internal processing vessel The dimples and d _{1 to} d ₄ indicate the arrangement positions of the protrusion weirs inside the tank), FIG. 12C is a bottom view, and FIG. 12D is a side view of FIG. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 12B. 14 is an enlarged cross-sectional view of the XIV portion of FIG. 13, FIG. 15 shows the dimple arrangement between the protruding weirs, FIG. 15A is a dimple arrangement group provided on one vertical wall, and FIG. 15B is provided on the intermediate vertical plate wall. It is the arrangement | sequence diagram which showed the dimple arrangement group.

The substrate processing apparatus 1B according to the third embodiment includes a processing tank 2B, and the processing tank 2B is configured by combining the processing tanks 2 and 2A of the first and second embodiments. That is, the treatment tank 2B are on opposite walls of the vertical plate 2b and the intermediate vertical plate 3, a plurality of projections weirs _{c 1 ~c 4, d 1 ~d} 4 each projection weir _c 1 _{to c} 4 provided with, d It has a structure obtained by arranging a plurality of dimples between ₁ to d _4.

As shown in FIGS. 12 and 13, the processing tank 2 </ b> B has a plurality of, for example, four protrusion weirs c ₁ to 4 on the opposing wall surfaces of the vertical plate 2 b and the intermediate vertical plate 3 with a predetermined spacing in the horizontal direction. c ₄ and d _{1 to} d ₄ are provided, and dimple row groups A and B are arranged between the protrusion weirs c _{1 to} c ₄ and d _{1 to} d ₄ . A plurality of protrusions weir _{c 1 ~c 4, d 1 ~d} 4 and dimples column group A, since B has a same structure, protrusions weir _c 1 to c ₄ and dimples column provided on one of the vertical plate wall 2b The group A will be described.

The wall surface of the vertical plate 2b, 4 pieces of protrusions weir c ₁ to c ₄ are arranged in the horizontal direction at a predetermined interval H4. H4 is 100 mm. These protrusion weirs c _{1 to} c ₄ have the same shape. Projections weir c ₁ of one of them, as shown in FIG. 14, has a height h ₂ of the top consists of raised ridge-like projection in a curved shape from the vertical plate 2b surface. That is, the raised curved is a circle with a diameter of 25 mm, a portion of raised from the vertical plate 2b surface, top height _{h 2} is a 2.5 mm. Since the protrusion weirs are provided on the respective wall surfaces of the vertical plate 2b and the intermediate vertical plate, the gap G2 between the both protrusion weirs is 10 mm (G1 is 15 mm).

A dimple row group A is provided between the protrusion weirs c _{1 to} c ₄ . As shown in FIG. 15A, the dimple row group A includes a plurality of dimple rows A1 (a ₁ , a _{12 to} a _1n ), A 2 (a ₂ ) arranged in a straight line at a predetermined pitch (3 to 50 mm). , A _{22 to} a _2n ) to A4 (a ₄ , a _{42 to} a _4n ) are arranged in a plurality of rows A1 to A4 in the horizontal direction with a predetermined gap (3 to 50 mm) in the vertical direction. ing. Each dimple in the dimple row group A is a circular recess having a diameter of, for example, 0.5 to 5.0 mm and a depth of, for example, 0.5 to 2.0 mm.

As shown in FIG. 15B, similar dimple rows B1 (b ₁ , b _{12 to} b _1n ), B2 (b ₂ , b _{22 to} b _2n ) to B4 (b ₄ , b, A dimple row group B consisting of b _{42 to} b _4n ) is provided. Each dimple in the dimple row group B is a circular recess having a diameter of, for example, 0.5 to 5.0 mm and a depth of, for example, 0.5 to 2.0 mm.

  With reference to FIGS. 12-16, the effect | action of a protrusion dam and a dimple is demonstrated. FIG. 16 is an enlarged cross-sectional view schematically showing the XVI portion of FIG. 13 for explanation.

When the processing liquid flows into the inner tank R ₁ downward from the processing liquid supply box 7, that is, by downflow, the processing liquid collides with the first protrusion weir c ₁ , and a part of the processing liquid temporarily stops. It is done. Projections weir c _1, as shown in FIG. 12B, the width direction of the vertical plate wall 2b, that is, has a continuous dam from the horizontal one end to the other, the processing solution is dammed in the width direction. This damming results in a substantially uniform flow rate regardless of the distance from the processing liquid supply box 7, that is, the distance from the nozzle of the processing liquid supply box 7.

Dam was treated liquid passes through the narrow gap between the top and the wafer W protruding weir c _1, it flows toward the downstream projection weir c _2. The processing liquid that has flowed in is stored between adjacent protrusion weirs c ₁ and c ₂ . The portion indicated by symbol Br in FIG. 16 schematically shows the stored processing liquid. The stored processing liquid Br does not stay but flows away at any time, and is illustrated as an image. The processing liquid Br is uniformly stored between the adjacent protrusion weirs c ₁ and c ₂ shown in FIGS. 12B and 13, and the processing liquid is stabilized almost uniformly on the entire surface of the wafer W at a substantially constant flow rate. Supplied. Further, the treatment liquid Br hits the dimple row group A, and eddy currents are generated in the individual dimples a _{1 to} a _{4 on the} surface of the vertical plate wall 2b. Due to the generation of this vortex, the flow velocity of the processing liquid flowing in the vicinity of the surface of the vertical plate wall 2b is increased. When the flow rate of the processing liquid flowing in the vicinity of the surface of the vertical plate wall 2b increases, a flow rate difference occurs between the flow rate flowing in the vicinity of the wafer W surface. In other words, the flow velocity resistance is reduced by the increase in the flow velocity in the vicinity of the vertical plate wall 2b surface side, and a resistance difference is generated with the flow velocity resistance in the vicinity of the wafer W. When this resistance difference occurs, an eddy current of the processing liquid is generated in the vicinity of the wafer W, and the eddy current comes into contact with the surface of the wafer W and scrapes off unnecessary substances such as a resist adhering to the surface of the wafer W. . The operation of this dimple row group is the same as that of the dimple row group of the first embodiment. Hereinafter, eddy currents are generated between the downstream protrusion weirs c _{2 to} c ₃ and c _{3 to} c ₄ at a stable flow velocity, and the surface of the wafer W is cleaned by the eddy currents. This cleaning is also performed between the intermediate vertical plate wall 3 and the wafer W.

As described above, the substrate processing apparatus 1B according to the third embodiment is provided with the protrusion weir and the dimple row group on each wall surface of the vertical plate 2b and the intermediate vertical plate 3 facing each other in the processing tank 2B. When the processing liquid is supplied into the inner tank R _1, between each wall surface opposed to the wafer W side of each vertical plate 2b, 3, is supplied stable processing liquid, the supplied process liquid As a result, a difference in liquid flow resistance occurs, so that the flow velocity of the processing liquid flowing in the vicinity of each wall surface side is high and the flow velocity in the vicinity of the wafer W surface side is low. As a result, a vortex or turbulent flow is generated on the wafer W surface side, and the vortex or turbulent flow contacts the front and back surfaces of the wafer W, so that the front and back surfaces of the wafer W are efficiently and effectively cleaned. Further, since the processing liquid is in a downflow, the removed contaminants are not returned and reattached. In the substrate processing apparatus 1B according to the third embodiment, the dimple row group is provided on each wall surface of the vertical plate 2b and the intermediate vertical plate 3 which are opposed to each other in the processing tank 2B. You may make it wash only.

Using the substrate processing apparatuses 1, 1A, and 1B of Examples 1 to 3, the specific resistance recovery time in the processing tank was measured under the following conditions. The concentration of the treatment liquid is H ₂ SO _{4 set} to 1 with respect to pure water 100. The flow rate was 3 L / min, 5 L / min, 7 L / min, and a measuring instrument used a conductivity meter, and a specific resistance value was obtained for calculation based on the measured value with this conductivity meter. As a result, as a result of comparison in consideration of variation in specific resistance recovery and rise time, Example 3 obtained the best result, and subsequently, Example 1 followed by Example 2 resulted in good results. .

  Next, other fluid control means for generating vortex or turbulent flow are shown in FIGS. FIG. 17A is a view showing a modification of the fluid control means, FIG. 17B is a view showing another modification of the fluid control means, and FIG. 17C is a view showing another modification of the fluid control means. FIG. 18 is a view showing still another modification of the fluid control means.

In the first to third embodiments, the dimples, the protrusion weirs, and the combination thereof generate vortex or turbulence, but other means may be formed instead of such dimples and protrusion weirs.
Other means include, for example, a combination of dimples e, protrusions f, recessed grooves g, protruding protrusions h, and rough surfaces i (see FIG. 17A), or a combination of recessed grooves g and protrusions h ( 17B), and a combination of the protruding ridge h, the rough surface i, and the triangular groove j (see FIG. 17C). Further, as shown in FIG. 18, even the protrusion weir may be a protrusion weir k in which the part facing the wafer W is thin and the part disengaged from the wafer W is thick.

FIG. 1 is a schematic diagram of a substrate processing apparatus common to the first to third embodiments of the present invention. 2 shows a processing tank constituting the substrate processing apparatus of FIG. 1, FIG. 2A is a top view of the processing tank, FIG. 2B is a side view, FIG. 2C is a bottom view, and FIG. 2D is a side view of FIG. FIG. 3 is a cross-sectional view taken along line III-III in FIG. 2B. 4 shows a processing liquid supply box, FIG. 4A is a top view of the supply box, FIG. 4B is a side view of the supply box of FIG. 4A viewed from a direction orthogonal to the longitudinal direction, and FIG. 4C is a longitudinal view of the supply box of FIG. It is the side view seen. FIG. 5 is a side view of the treatment tank of FIG. 6 is an enlarged cross-sectional view of a portion VI in FIG. 7 shows the arrangement of dimples provided on the wall of the processing tank in FIGS. 2B and 3, FIG. 7A shows the dimple arrangement group provided on one vertical plate, and FIG. 7B shows the dimple arrangement group provided on the intermediate vertical plate. FIG. FIG. 8 is an enlarged cross-sectional view schematically showing the portion VIII in FIG. 3 for explanation. 9 shows a processing tank constituting the substrate processing apparatus of Example 2, FIG. 9A is a top view of the processing tank, FIG. 9B is a side view, FIG. 9C is a bottom view, and FIG. 9D is a side view of FIG. It is a side view. 10 is a cross-sectional view taken along line XX in FIG. 9B. FIG. 11 is an enlarged cross-sectional view of a portion XI in FIG. 12 shows a processing tank constituting the substrate processing apparatus of Example 3, FIG. 12A is a top view of the processing tank, FIG. 12B is a side view, FIG. 12C is a bottom view, and FIG. 12D is a side view of FIG. It is a side view. 13 is a cross-sectional view taken along line XIII-XIII in FIG. 12B. FIG. 14 is an enlarged cross-sectional view of the XIV portion of FIG. 15 shows the dimple arrangement between the protrusion weirs, FIG. 15A is a dimple arrangement group provided on one vertical wall, and FIG. 15B is an arrangement view showing the dimple arrangement group provided on the intermediate vertical plate wall. FIG. 16 is an enlarged cross-sectional view schematically showing the XVI portion of FIG. 13 for explanation. FIG. 17A is a view showing a modification of the fluid control means, FIG. 17B is a view showing another modification of the fluid control means, and FIG. 17C is a view showing still another modification of the fluid control means. FIG. 18 is a view showing still another modification of the fluid control means. FIG. 19 is a schematic view of a conventional single wafer cleaning apparatus.

Explanation of symbols

1, 1A, 1B Substrate processing apparatus 2, 2A, 2B Processing tank 2a Opening 2b Vertical plate (first standing wall)
2c Vertical plate 3 Intermediate vertical plate (second standing wall)
4 mounting groove 5 gap 6 the outer tub 7 process liquid supply box ₇ 1, _{7 2} nozzle holes _{a 1 ~a m, b 1 ~b} m dimple _c 1 _{to c 4,} d 1 to d ₄ protruding weir _D 1, _{D 2} Discharge hole I Treatment liquid supply system
II Recovery / circulation system R ₁ Inner tank R ₂ Vacancy (side passage)
S Processing liquid supply source W Wafer (Substrate to be processed)

Claims (14)

In the substrate processing method for processing the surface of the substrate to be processed by supplying the processing liquid while standing and accommodating each substrate to be processed in the processing tank,
The treatment tank is provided with a fluid control means for changing a flow of the treatment liquid on an inner wall surface facing at least one substrate surface of the substrate to be treated,
A substrate processing method characterized in that the surface of the substrate to be processed is processed by changing the flow of the processing liquid between an inner wall surface provided with the fluid control means and a substrate surface side of the substrate to be processed. .   The flow rate on the inner wall surface side where the fluid control means is provided is faster or slower than the flow velocity on the substrate surface side, and the substrate surface is processed by generating vortex or turbulence on the substrate surface side. The substrate processing method according to claim 1.   The substrate processing method according to claim 1, wherein the flow of the processing liquid is a unidirectional flow that flows in one direction in the processing tank.   The substrate processing method according to claim 3, wherein the one-way flow is a downward flow that flows from the upper side to the lower side in the processing tank. A substrate to be processed is erected and accommodated one by one in a gap between a pair of first and second erected walls that are erected at a predetermined interval and face each other. In the substrate processing apparatus provided with the processing tank for performing the surface treatment of the processing substrate,
The first and second standing walls are provided with a first fluid control means on at least one of the opposing inner wall surfaces, and the first fluid control means is an inner wall surface provided with the fluid control means. A substrate processing apparatus for changing a flow of a processing liquid between a substrate side and a substrate surface side of the substrate to be processed.   6. The substrate processing apparatus according to claim 5, wherein the first fluid control means is formed with a rough surface different from a roughness of the substrate surface to be processed on the inner wall surface.   6. The substrate processing apparatus according to claim 5, wherein the first fluid control means is formed of a plurality of dimples.   The plurality of dimples are dimple rows arranged in a row at a predetermined pitch in the horizontal direction and arranged in a plurality of rows at predetermined intervals in the standing direction. Substrate processing equipment.   The first and second standing walls are provided with second fluid control means on at least one of the opposing inner wall surfaces, and the second fluid control means is a projection that partially narrows the gap. 6. The substrate processing apparatus according to claim 5, wherein the substrate processing apparatus is provided.   The substrate processing apparatus according to claim 9, wherein the protrusion is a protrusion weir that partially narrows the gap.   The substrate processing apparatus according to claim 10, wherein at least two of the protrusion weirs are provided at a predetermined interval in a direction perpendicular to the standing direction of the wall surface.   The first fluid control means according to any one of claims 5 to 8 and the first fluid control means according to any one of claims 5 to 8 on at least one of the opposing inner wall surfaces of the first and second standing walls. A substrate processing apparatus comprising the second control means according to any one of the above.   A processing liquid supply means is disposed on top of the first and second standing walls, and a processing liquid is supplied from the processing liquid supply means to a gap between the first and second standing walls, The substrate processing apparatus according to claim 1, wherein a surface treatment of the substrate to be processed accommodated between the gaps is performed.   A side path that is connected to a gap provided in a bottom portion between the first and second standing walls on the outer wall surface of one of the first and second standing walls and is caused to flow upward. The substrate processing apparatus according to claim 1, wherein a recovery tank is provided on the outer wall of the side path to store the processing liquid overflowing from the upper end of the side path. .

Images