JP2010123978A5 - - Google Patents
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- JP2010123978A5 JP2010123978A5 JP2009291333A JP2009291333A JP2010123978A5 JP 2010123978 A5 JP2010123978 A5 JP 2010123978A5 JP 2009291333 A JP2009291333 A JP 2009291333A JP 2009291333 A JP2009291333 A JP 2009291333A JP 2010123978 A5 JP2010123978 A5 JP 2010123978A5
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- JP
- Japan
- Prior art keywords
- layer
- ferromagnetic layer
- ferromagnetic
- magnetoresistive element
- nonmagnetic intermediate
- Prior art date
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- 230000005294 ferromagnetic Effects 0.000 claims 11
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical group [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 4
- 230000005290 antiferromagnetic Effects 0.000 claims 3
- 230000005415 magnetization Effects 0.000 claims 3
- 229910052751 metal Inorganic materials 0.000 claims 3
- 239000002184 metal Substances 0.000 claims 3
- 239000000956 alloy Substances 0.000 claims 2
- 229910045601 alloy Inorganic materials 0.000 claims 2
- REDXJYDRNCIFBQ-UHFFFAOYSA-N aluminium(3+) Chemical class [Al+3] REDXJYDRNCIFBQ-UHFFFAOYSA-N 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 2
- 229910052796 boron Inorganic materials 0.000 claims 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 239000005092 Ruthenium Substances 0.000 claims 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims 1
- 229910052741 iridium Inorganic materials 0.000 claims 1
- PWHULOQIROXLJO-UHFFFAOYSA-N manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- 229910052748 manganese Inorganic materials 0.000 claims 1
- 239000011572 manganese Substances 0.000 claims 1
- 229910052762 osmium Inorganic materials 0.000 claims 1
- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium Chemical compound [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims 1
- 229910052703 rhodium Inorganic materials 0.000 claims 1
- 239000010948 rhodium Substances 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
Claims (3)
積層磁化固定層と、 A laminated magnetization pinned layer;
第２非磁性中間層と、 A second nonmagnetic intermediate layer;
磁化自由層と、を有する磁気抵抗素子であって、 A magnetoresistive element having a magnetization free layer,
前記反強磁性層はマンガンを含有し、 The antiferromagnetic layer contains manganese;
前記積層磁化固定層は前記反強磁性層側に設けられた第１強磁性層と第２強磁性層、前記第２非磁性中間層側に設けられた第３強磁性層と第４強磁性層、及び前記第２強磁性層と前記第３強磁性層との間に設けられた第１非磁性中間層を有し、 The stacked magnetization fixed layer includes a first ferromagnetic layer and a second ferromagnetic layer provided on the antiferromagnetic layer side, and a third ferromagnetic layer and a fourth ferromagnetic layer provided on the second nonmagnetic intermediate layer side. And a first nonmagnetic intermediate layer provided between the second ferromagnetic layer and the third ferromagnetic layer,
前記第１強磁性層は下記の式１により示される合金を有し、 The first ferromagnetic layer has an alloy represented by the following formula 1,
前記第２強磁性層、前記第３強磁性層及び前記第４強磁性層は下記の式２により示される合金を有し、 The second ferromagnetic layer, the third ferromagnetic layer, and the fourth ferromagnetic layer have an alloy represented by the following formula 2,
前記式１は、 Formula 1 is
（ＦｅａＣｏｂＮｉｃ）ｄ（Ｍ）ｅ(FeaCobNic) d (M) e
（０≦ａ＜１００、０≦ｂ＜１００、０≦ｃ＜１００、ａ＋ｂ＋ｃ＝１００、９９．５≧d≧５０、０．５≦e≦５０、d＋e＝１００ Ｍは、白金族系金属を示す。）であり、(0 ≦ a <100, 0 ≦ b <100, 0 ≦ c <100, a + b + c = 100, 99.5 ≧ d ≧ 50, 0.5 ≦ e ≦ 50, d + e = 100 M is a platinum group metal. And
前記式２は、 Formula 2 is
（ＦｅｘＣｏｙＮｉｚ）ｍ（Ｂ）ｎ(FexCoyNiz) m (B) n
（０≦ｘ＜１００、０≦ｙ＜１００、０≦ｚ＜１００、ｘ＋ｙ＋ｚ＝１００、ｍ＋ｎ＝１００、０≦ｎ＜３０、７０＜m≦１００ Ｂはボロンを示す。）であることを特徴とする磁気抵抗素子。(0 ≦ x <100, 0 ≦ y <100, 0 ≦ z <100, x + y + z = 100, m + n = 100, 0 ≦ n <30, 70 <m ≦ 100 B represents boron). A magnetoresistive element.
前記第２非磁性中間層はＭｇＯを有するトンネルバリア層であることを特徴とする請求項１または２に記載の磁気抵抗素子。 The magnetoresistive element according to claim 1, wherein the second nonmagnetic intermediate layer is a tunnel barrier layer containing MgO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2009291333A JP2010123978A (en) | 2007-05-07 | 2009-12-22 | Method of manufacturing magnetoresistive element |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007122367 | 2007-05-07 | ||
| JP2009291333A JP2010123978A (en) | 2007-05-07 | 2009-12-22 | Method of manufacturing magnetoresistive element |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008110434A Division JP2008306169A (en) | 2007-05-07 | 2008-04-21 | Magnetoresistive element, its manufacturing method, and magnetic multilayer film manufacturing apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2010123978A JP2010123978A (en) | 2010-06-03 |
| JP2010123978A5 true JP2010123978A5 (en) | 2011-08-25 |
Family
ID=40113862
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008110434A Pending JP2008306169A (en) | 2007-05-07 | 2008-04-21 | Magnetoresistive element, its manufacturing method, and magnetic multilayer film manufacturing apparatus |
| JP2009291333A Pending JP2010123978A (en) | 2007-05-07 | 2009-12-22 | Method of manufacturing magnetoresistive element |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008110434A Pending JP2008306169A (en) | 2007-05-07 | 2008-04-21 | Magnetoresistive element, its manufacturing method, and magnetic multilayer film manufacturing apparatus |
Country Status (2)
| Country | Link |
|---|---|
| JP (2) | JP2008306169A (en) |
| CN (1) | CN101304070B (en) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102082018B (en) * | 2009-11-26 | 2013-10-16 | 中国科学院物理研究所 | Magnetic multilayer film unit, preparation method and magnetic moment overturning method thereof |
| US8508221B2 (en) * | 2010-08-30 | 2013-08-13 | Everspin Technologies, Inc. | Two-axis magnetic field sensor having reduced compensation angle for zero offset |
| US8325448B2 (en) * | 2011-02-11 | 2012-12-04 | Headway Technologies, Inc. | Pinning field in MR devices despite higher annealing temperature |
| US20130065075A1 (en) * | 2011-09-12 | 2013-03-14 | Klemens Pruegl | Magnetoresistive spin valve layer systems |
| JP2020068214A (en) * | 2017-02-28 | 2020-04-30 | Tdk株式会社 | Ferromagnetic multilayer film, magnetoresistive effect element, and manufacturing method of ferromagnetic multilayer film |
| US10700267B2 (en) * | 2017-11-13 | 2020-06-30 | Tdk Corporation | Magnetoresistive element, manufacturing method thereof and magnetic sensor |
| CN110491990A (en) * | 2019-08-13 | 2019-11-22 | 上海新微技术研发中心有限公司 | Magnetic memory device |
| CN112750944A (en) * | 2019-10-30 | 2021-05-04 | 上海磁宇信息科技有限公司 | Magnetic tunnel junction structure and magnetic random access memory |
| CN115101284B (en) * | 2022-08-25 | 2022-12-20 | 季华实验室 | Magnetic multilayer film and preparation method and application thereof |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5528440A (en) * | 1994-07-26 | 1996-06-18 | International Business Machines Corporation | Spin valve magnetoresistive element with longitudinal exchange biasing of end regions abutting the free layer, and magnetic recording system using the element |
| JPH08111315A (en) * | 1994-10-07 | 1996-04-30 | Mitsui Mining & Smelting Co Ltd | Magnetoresistive effect multilayer film |
| US6226159B1 (en) * | 1999-06-25 | 2001-05-01 | International Business Machines Corporation | Multilayered pinned layer of cobalt based films separated by a nickel base film for improved coupling field and GMR for spin valve sensors |
| JP3473016B2 (en) * | 1999-08-25 | 2003-12-02 | 日本電気株式会社 | Ferromagnetic tunnel junction device, magnetic head and magnetic memory |
| JP4693292B2 (en) * | 2000-09-11 | 2011-06-01 | 株式会社東芝 | Ferromagnetic tunnel junction device and manufacturing method thereof |
| JP2002167661A (en) * | 2000-11-30 | 2002-06-11 | Anelva Corp | Magnetic multilayered film deposition system |
| JP4167428B2 (en) * | 2001-02-01 | 2008-10-15 | 株式会社東芝 | Magnetoresistive element, magnetoresistive head, and magnetic recording / reproducing apparatus |
| JP4387955B2 (en) * | 2001-04-24 | 2009-12-24 | パナソニック株式会社 | Magnetoresistive effect element |
| JP3551196B2 (en) * | 2001-06-26 | 2004-08-04 | 松下電器産業株式会社 | Method of manufacturing magnetoresistive element |
| JP3607265B2 (en) * | 2001-06-26 | 2005-01-05 | 松下電器産業株式会社 | Magnetoresistive element |
| JP3737986B2 (en) * | 2001-07-25 | 2006-01-25 | アルプス電気株式会社 | Exchange coupling film and magnetic sensing element using the exchange coupling film |
| JP2003258335A (en) * | 2002-03-04 | 2003-09-12 | Matsushita Electric Ind Co Ltd | Manufacturing method for tunneling magneto resistive effect device |
| JP2003304012A (en) * | 2002-04-10 | 2003-10-24 | Matsushita Electric Ind Co Ltd | Tunnel magnetoresistive element |
| JP2003324225A (en) * | 2002-04-26 | 2003-11-14 | Nec Corp | Laminated ferrimagnetic thin film, and magneto- resistance effect element and ferromagnetic tunnel element using the same |
| JP2004047583A (en) * | 2002-07-09 | 2004-02-12 | Matsushita Electric Ind Co Ltd | Magnetoresistance effect element, and magnetic head, magnetic memory, and magnetic recording equipment using the magnetoresistance effect element |
| JP2005223193A (en) * | 2004-02-06 | 2005-08-18 | Tdk Corp | Magnetoresistance effect element, thin film magnetic head, thin film magnetic head wafer, head gimbal assembly, head arm assembly, head stack assembly, and hard disk device |
| JP4292128B2 (en) * | 2004-09-07 | 2009-07-08 | キヤノンアネルバ株式会社 | Method for manufacturing magnetoresistive element |
| JP2006156893A (en) * | 2004-12-01 | 2006-06-15 | Tdk Corp | Magnetic memory |
| JP2006165265A (en) * | 2004-12-07 | 2006-06-22 | Sony Corp | Storage element and memory |
| JP4661230B2 (en) * | 2005-01-21 | 2011-03-30 | ソニー株式会社 | Memory element and memory |
| JP4008478B2 (en) * | 2005-07-13 | 2007-11-14 | Ｔｄｋ株式会社 | Magnetic field detection element, substrate, wafer, head gimbal assembly, hard disk device, and method of manufacturing magnetic field detection element |
| JP2007027493A (en) * | 2005-07-19 | 2007-02-01 | Nec Corp | Magnetoresistive element and its manufacturing method |
| JP2007073638A (en) * | 2005-09-05 | 2007-03-22 | Sony Corp | Memory element and memory |
-
2008
- 2008-04-21 JP JP2008110434A patent/JP2008306169A/en active Pending
- 2008-05-07 CN CN200810095658XA patent/CN101304070B/en active Active
-
2009
- 2009-12-22 JP JP2009291333A patent/JP2010123978A/en active Pending
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