JP2010123952A - 薄膜トランジスタおよび半導体組成物 - Google Patents

薄膜トランジスタおよび半導体組成物 Download PDF

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Publication number
JP2010123952A
JP2010123952A JP2009258770A JP2009258770A JP2010123952A JP 2010123952 A JP2010123952 A JP 2010123952A JP 2009258770 A JP2009258770 A JP 2009258770A JP 2009258770 A JP2009258770 A JP 2009258770A JP 2010123952 A JP2010123952 A JP 2010123952A
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alkyl
semiconductor layer
aryl
semiconductor
substituted
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JP2010123952A5 (enExample
Inventor
Yuning Li
リ ユニン
Yiliang Wu
ウー イリアン
Pin Liu
リウ ピン
Paul F Smith
エフ．スミス ポール
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Xerox Corp
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Xerox Corp
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Publication of JP2010123952A5 publication Critical patent/JP2010123952A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D493/00—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system
    • C07D493/02—Heterocyclic compounds containing oxygen atoms as the only ring hetero atoms in the condensed system in which the condensed system contains two hetero rings
    • C07D493/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D495/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms
    • C07D495/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having sulfur atoms as the only ring hetero atoms in which the condensed system contains two hetero rings
    • C07D495/04—Ortho-condensed systems
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D517/00—Heterocyclic compounds containing in the condensed system at least one hetero ring having selenium, tellurium, or halogen atoms as ring hetero atoms
    • C07D517/02—Heterocyclic compounds containing in the condensed system at least one hetero ring having selenium, tellurium, or halogen atoms as ring hetero atoms in which the condensed system contains two hetero rings
    • C07D517/04—Ortho-condensed systems
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/657—Polycyclic condensed heteroaromatic hydrocarbons
    • H10K85/6572—Polycyclic condensed heteroaromatic hydrocarbons comprising only nitrogen in the heteroaromatic polycondensed ring system, e.g. phenanthroline or carbazole
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/151—Copolymers

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electroluminescent Light Sources (AREA)
  • Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
JP2009258770A 2008-11-19 2009-11-12 薄膜トランジスタおよび半導体組成物 Pending JP2010123952A (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/273,585 US8154013B2 (en) 2008-11-19 2008-11-19 Organic thin-film transistors

Publications (2)

Publication Number Publication Date
JP2010123952A true JP2010123952A (ja) 2010-06-03
JP2010123952A5 JP2010123952A5 (enExample) 2012-12-20

Family

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JP2009258770A Pending JP2010123952A (ja) 2008-11-19 2009-11-12 薄膜トランジスタおよび半導体組成物

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US (3) US8154013B2 (enExample)
JP (1) JP2010123952A (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102643284B (zh) * 2011-02-17 2014-11-26 兰州大成科技股份有限公司 4,9-双亚烷基茚并二噻吩衍生物及其共轭聚合物的制备方法与用途
CN103044660A (zh) * 2011-10-11 2013-04-17 中国科学院化学研究所 芳酰亚胺共轭聚合物、其制备方法及其在有机光电子器件中的应用
US8987602B2 (en) * 2012-06-14 2015-03-24 Zhuhai Advanced Chip Carriers & Electronic Substrate Solutions Technologies Co. Ltd. Multilayer electronic support structure with cofabricated metal core

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128028A (ja) * 2002-09-30 2004-04-22 Ricoh Co Ltd 縦型有機トランジスタ
JP2004146733A (ja) * 2002-10-28 2004-05-20 Konica Minolta Holdings Inc 有機半導体及びそれを用いる有機薄膜トランジスタ素子
JP2004204234A (ja) * 2002-12-24 2004-07-22 Samsung Sdi Co Ltd 青色発光高分子及びこれを採用した有機ｅｌ素子
JP2006183048A (ja) * 2004-12-14 2006-07-13 Xerox Corp インドロカルバゾール残基を有する化合物を形成するための方法
JP2007019294A (ja) * 2005-07-08 2007-01-25 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機半導体素子及び有機薄膜トランジスタ
JP2007088222A (ja) * 2005-09-22 2007-04-05 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
JP2008004725A (ja) * 2006-06-22 2008-01-10 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
JP2008147256A (ja) * 2006-12-06 2008-06-26 Hiroshima Univ 電界効果トランジスタ
JP2009190999A (ja) * 2008-02-13 2009-08-27 Osaka Univ 縮合環化合物及びその製造方法、重合体、これらを含む有機薄膜、並びに、これを備える有機薄膜素子及び有機薄膜トランジスタ。

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7002176B2 (en) 2002-05-31 2006-02-21 Ricoh Company, Ltd. Vertical organic transistor
JP5410760B2 (ja) 2005-12-12 2014-02-05 チバ ホールディング インコーポレーテッド 半導体素子、化合物、半導体素子の半導体層及び薄膜トランジスタ素子を作製する方法
US7495251B2 (en) * 2006-04-21 2009-02-24 3M Innovative Properties Company Electronic devices containing acene-thiophene copolymers with silylethynyl groups
US20100117066A1 (en) * 2007-04-28 2010-05-13 Merck Patent Gmbh Organic Semiconductors
US8057919B2 (en) * 2008-06-05 2011-11-15 Idemitsu Kosan Co., Ltd. Material for organic electroluminescence device and organic electroluminescence device using the same

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004128028A (ja) * 2002-09-30 2004-04-22 Ricoh Co Ltd 縦型有機トランジスタ
JP2004146733A (ja) * 2002-10-28 2004-05-20 Konica Minolta Holdings Inc 有機半導体及びそれを用いる有機薄膜トランジスタ素子
JP2004204234A (ja) * 2002-12-24 2004-07-22 Samsung Sdi Co Ltd 青色発光高分子及びこれを採用した有機ｅｌ素子
JP2006183048A (ja) * 2004-12-14 2006-07-13 Xerox Corp インドロカルバゾール残基を有する化合物を形成するための方法
JP2007019294A (ja) * 2005-07-08 2007-01-25 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機半導体素子及び有機薄膜トランジスタ
JP2007088222A (ja) * 2005-09-22 2007-04-05 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
JP2008004725A (ja) * 2006-06-22 2008-01-10 Konica Minolta Holdings Inc 有機半導体材料、有機半導体膜、有機半導体デバイス及び有機薄膜トランジスタ
JP2008147256A (ja) * 2006-12-06 2008-06-26 Hiroshima Univ 電界効果トランジスタ
JP2009190999A (ja) * 2008-02-13 2009-08-27 Osaka Univ 縮合環化合物及びその製造方法、重合体、これらを含む有機薄膜、並びに、これを備える有機薄膜素子及び有機薄膜トランジスタ。

Non-Patent Citations (2)

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Title
JPN6012030256; Ｈｕａｌｏｎｇ　Ｐａｎ　ｅｔ　ａｌ．: '"Ｌｏｗ-Ｔｅｍｐｅｒａｔｕｒｅ，　Ｓｏｌｕｔｉｏｎ-Ｐｒｏｃｅｓｓｅｄ，　Ｈｉｇｈ-Ｍｏｂｉｌｉｔｙ　Ｐｏｌｙｍｅｒ　Ｓｅｍｉｃｏｎｄｕｃｔｏｒｓ　ｆｏｒ　Ｔｈｉｎ-Ｆｉｌｍ　Ｔｒａｎｓｉｓｔｏｒ"' Ｊｏｕｒｎａｌ　ｏｆ　Ａｍｅｒｉｃａｎ　Ｃｈｅｍｉｃａｌ　Ｓｏｃｉｅｔｙ Ｖｏｌ．　１２９, 20070316, ｐｐ．　４１１２-４１１３, Ａｍｅｒｉｃａｎ　Ｃｈｅｍｉｃａｌ　Ｓｏｃｉｅｔｙ *
JPN6012037303; Ｈｕａｌｏｎｇ　Ｐａｎ　ｅｔ　ａｌ．: '"Ｂｅｎｚｏｄｉｔｈｉｏｐｈｅｎｅ　Ｃｏｐｏｌｙｍｅｒ　-　Ａ　Ｌｏｗ-Ｔｅｍｐｅｒａｔｕｒｅ，　Ｓｏｌｕｔｉｏｎ-Ｐｒｏｃｅｓｓｅｄ　Ｈｉｇｈ-Ｐｅｒｆｏｒｍａｎｃｅ　Ｓｅｍｉｃｏｎｄｕｃｔｏｒ　ｆ' Ａｄｖａｎｃｅｄ　Ｆｕｎｃｔｉｏｎａｌ　Ｍａｔｅｒｉａｌｓ Ｖｏｌ．　１７, 2007, ｐｐ．　３５７４-３５７９, Ｗｉｌｅｙ-ＶＣＨ *

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Publication number Publication date
US20130273688A1 (en) 2013-10-17
US20100123123A1 (en) 2010-05-20
US20120178890A1 (en) 2012-07-12
US8154013B2 (en) 2012-04-10
US8729222B2 (en) 2014-05-20
US8461292B2 (en) 2013-06-11

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