JP2010123685A - Substrate processing method, device manufacturing system, aligner, and device manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate processing method that can suppress an exposure defect. <P>SOLUTION: The substrate processing method includes enhancing liquid repellency of a surface of a substrate having a photosensitive film to a liquid by bringing the surface of the substrate into contact with plasma produced with a process gas; and exposing the substrate by irradiating, with exposure light, at least a portion of the surface of the substrate that is brought into contact with the plasma. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a substrate processing method, a device manufacturing system, an exposure apparatus, and a device manufacturing method.

As an exposure apparatus used in a photolithography process, there is known an immersion exposure apparatus that exposes a substrate with exposure light through a liquid as disclosed in Patent Documents 1 and 2, for example.
US Patent Application Publication No. 2006/0139614 US Pat. No. 7,199,858

  In the immersion exposure apparatus, the surface of the substrate to be exposed comes into contact with the liquid. If the surface state of the substrate deteriorates, exposure failure may occur. For example, when the liquid repellency with respect to the liquid on the surface of the substrate is lowered, the liquid may leak or a liquid (for example, a liquid film or a droplet) may remain on the substrate. The environment (temperature, humidity, cleanliness, etc.) in which the exposure apparatus is placed may change due to vaporization of leaked liquid or residual liquid, and the substrate or surrounding members may be thermally deformed. There is sex. If such a problem occurs, the performance of the exposure apparatus may deteriorate, and an exposure failure may occur, such as a defect occurring in a pattern formed on the substrate. As a result, a defective device may occur.

  An object of this invention is to provide the substrate processing method and exposure apparatus which can suppress generation | occurrence | production of exposure failure. It is another object of the present invention to provide a device manufacturing system and a device manufacturing method that can suppress the occurrence of defective devices.

  According to the first aspect of the present invention, the surface of the substrate including the photosensitive film is brought into contact with the plasma generated from the process gas to improve the liquid repellency of the substrate surface with respect to the liquid, and the substrate in contact with the plasma Irradiating at least a part of the surface of the substrate with exposure light through a liquid to expose the substrate, a substrate processing method is provided.

  According to the second aspect of the present invention, a film forming apparatus for forming a substrate including a photosensitive film, and a plasma generated from the process gas is brought into contact with the surface of the substrate including the photosensitive film to thereby form a liquid on the surface of the substrate. A device manufacturing system comprising: a plasma processing apparatus that improves liquid repellency to liquid; and an immersion exposure apparatus that exposes the substrate by irradiating at least part of the surface of the substrate in contact with the plasma through the liquid with exposure light Is provided.

  According to a third aspect of the present invention, there is provided an exposure apparatus that exposes a substrate with exposure light through a liquid, the substrate holding member movable to a position where the substrate can be held and irradiated with the exposure light. A plasma processing apparatus for bringing the plasma generated from the process gas into contact with the surface of the substrate before the substrate is exposed to exposure light and increasing the liquid repellency with respect to the liquid on the surface of the substrate. An exposure apparatus is provided in which exposure light is irradiated to at least a part of the surface of the contacted substrate through a liquid.

  According to a fourth aspect of the present invention, there is provided a device manufacturing method including exposing a substrate using the exposure apparatus according to the third aspect and developing the exposed substrate.

  According to the present invention, the occurrence of exposure failure can be suppressed. Moreover, according to the present invention, it is possible to suppress the occurrence of defective devices.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings, but the present invention is not limited thereto. In the following description, an XYZ orthogonal coordinate system is set, and the positional relationship of each part will be described with reference to this XYZ orthogonal coordinate system. A predetermined direction in the horizontal plane is defined as an X-axis direction, a direction orthogonal to the X-axis direction in the horizontal plane is defined as a Y-axis direction, and a direction orthogonal to each of the X-axis direction and the Y-axis direction (that is, a vertical direction) is defined as a Z-axis direction. In addition, the rotation (inclination) directions around the X axis, the Y axis, and the Z axis are the θX, θY, and θZ directions, respectively.

  FIG. 1 is a schematic configuration diagram illustrating an example of a device manufacturing system SYS according to the present embodiment. In FIG. 1, the device manufacturing system SYS includes an exposure apparatus EX that exposes a substrate P with exposure light EL, and a processing apparatus CD that is connected to the exposure apparatus EX via an interface IF.

  The exposure apparatus EX of the present embodiment is an immersion exposure apparatus that exposes a substrate P with exposure light EL through a liquid LQ. In the present embodiment, water (pure water) is used as the liquid LQ.

  In the present embodiment, the processing apparatus CD includes a film forming apparatus C that forms the substrate P including the photosensitive film Rg, and a developing apparatus D that develops the exposed substrate P. The photosensitive film is a film of a photosensitive material (photoresist). The substrate P is transported between the exposure apparatus EX and the processing apparatus CD via the interface IF.

  The exposure apparatus EX moves the mask stage 1 that can move while holding the mask M, the substrate stage 2 that can move while holding the substrate P, the drive system 4 that moves the mask stage 1, and the substrate stage 2. Drive system 5, interferometer system 7 for measuring the positions of mask stage 1 and substrate stage 2, transport device 9 capable of transporting substrate P, illumination system IL for illuminating mask M with exposure light EL, and exposure light A projection optical system PL that projects an image of the pattern of the mask M illuminated by EL onto the substrate P, and an immersion space LS that can form an immersion space LS so that at least a part of the optical path of the exposure light EL is filled with the liquid LQ. A member 10 and a control device 11 for controlling the operation of the entire exposure apparatus EX are provided.

  In addition, the exposure apparatus EX includes a plasma processing apparatus 101 that brings the plasma generated from the process gas PG into contact with the surface of the substrate P to improve the liquid repellency of the surface of the substrate P with respect to the liquid LQ. The plasma processing apparatus 101 improves the liquid repellency with respect to the liquid LQ on the surface of the substrate P before the substrate P is exposed with the exposure light EL.

  In addition, the exposure apparatus EX includes a chamber device 13 that forms the internal space 12 and a body 14 that is disposed in the internal space 12. The body 14 includes a first column 15 and a second column 16 provided on the first column 15. In the present embodiment, the mask stage 1, the substrate stage 2, the illumination system IL, the projection optical system PL, the transfer device 9, the body 14, and the like are arranged in the internal space 12 formed by the chamber device 13. The exposure light EL travels at least part of the internal space 12.

  The first column 15 includes a first support member 18 and a first surface plate 20 supported by the first support member 18 via a vibration isolator 19. The second column 16 includes a second support member 21 disposed on the first surface plate 20 and a second surface plate 23 supported by the second support member 21 via a vibration isolator 22.

  In the present embodiment, the internal space 12 includes first, second, third, and fourth spaces 12A, 12B, 12C, and 12D that are substantially closed. In the present embodiment, the first space 12A includes at least a part of a space between the first column 15 and a support surface FL disposed in, for example, a clean room. In the present embodiment, the second space 12 </ b> B includes at least a part of the space between the second column 16 and the first surface plate 20. In the present embodiment, the third space 12 </ b> C includes at least a part of the space between the chamber device 13 and the second surface plate 23. In the present embodiment, the fourth space 12 </ b> D includes at least a part of the space between the first column 15 (first support member 18) and the chamber device 13.

  In the present embodiment, the exposure apparatus EX adjusts the environment (at least one of temperature, humidity, pressure, and cleanness) of the first, second, third, and fourth spaces 12A, 12B, 12C, and 12D. Environment adjusting devices 24A, 24B, 24C, and 24D. In the present embodiment, each of the environmental adjustment devices 24A to 24D includes a temperature adjustment device that can adjust the temperature of the gas, a filter unit that can remove foreign substances in the gas, and the like. The environment adjusting devices 24A to 24D adjust the environment of the first to fourth spaces 12A to 12D by supplying clean and temperature-adjusted gases to the first to fourth spaces 12A to 12D, respectively. In the present embodiment, the temperature of the gas supplied by the environment adjusting devices 24A to 24D is, for example, 23 ° C. Note that it is not necessary to provide one environment adjusting device in each of the first space 12A to the fourth space 12D, and the environment of a plurality of spaces may be controlled by one environment adjusting device.

The illumination system IL irradiates the predetermined illumination area IR with the exposure light EL. The illumination area IR includes a position where the exposure light EL emitted from the illumination system IL can be irradiated. The illumination system IL illuminates at least a part of the mask M arranged in the illumination region IR with the exposure light EL having a uniform illuminance distribution. As the exposure light EL emitted from the illumination system IL, for example, far ultraviolet light (DUV light) such as bright lines (g-line, h-line, i-line) and KrF excimer laser light (wavelength 248 nm) emitted from a mercury lamp, ArF Vacuum ultraviolet light (VUV light) such as excimer laser light (wavelength 193 nm) and F ₂ laser light (wavelength 157 nm) is used. In the present embodiment, ArF excimer laser light that is ultraviolet light (vacuum ultraviolet light) is used as the exposure light EL.

  The mask stage 1 is movable on the guide surface 23G of the second surface plate 23 in the third space 12C. The mask stage 1 is movable with respect to the illumination region IR while holding the mask M. The mask stage 1 has a mask holding unit 25 that holds the mask M in a releasable manner. In the present embodiment, the mask holding unit 25 holds the mask M so that the surface (pattern forming surface) of the mask M and the XY plane are substantially parallel.

  The mask stage 1 is movable by the operation of the drive system 4. In the present embodiment, the drive system 4 includes a planar motor for moving the mask stage 1 on the guide surface 23G. A planar motor for moving the mask stage 1 includes, for example, a movable element 1M arranged on the mask stage 1 and a fixed plate arranged on the second surface plate 23 as disclosed in US Pat. No. 6,452,292. And a child 23C. In the present embodiment, the mask stage 1 is movable in six directions including the X-axis, Y-axis, Z-axis, θX, θY, and θZ directions by the operation of the drive system 4 including a planar motor.

  The projection optical system PL irradiates the predetermined projection region PR with the exposure light EL. The projection optical system PL projects an image of the pattern of the mask M at a predetermined projection magnification onto at least a part of the substrate P arranged in the projection region PR. A plurality of optical elements of the projection optical system PL are held by the lens barrel 26. The lens barrel 26 has a flange 26F. Projection optical system PL is supported by first surface plate 20 via flange 26F. A vibration isolator can be provided between the first surface plate 20 and the lens barrel 26.

  The projection optical system PL of the present embodiment is a reduction system whose projection magnification is, for example, 1/4, 1/5, or 1/8. Note that the projection optical system PL may be either an equal magnification system or an enlargement system. In the present embodiment, the optical axis of the projection optical system PL is parallel to the Z axis. The projection optical system PL may be any of a refractive system that does not include a reflective optical element, a reflective system that does not include a refractive optical element, and a catadioptric system that includes a reflective optical element and a refractive optical element. Further, the projection optical system PL may form either an inverted image or an erect image.

  Of the plurality of optical elements of the projection optical system PL, the terminal optical element 27 closest to the image plane of the projection optical system PL has an exit surface 28 that emits the exposure light EL toward the image plane of the projection optical system PL. The projection region PR includes a position where the exposure light EL emitted from the emission surface 28 of the projection optical system PL (terminal optical element 27) can be irradiated.

  In the present embodiment, among the plurality of optical elements of the projection optical system PL, at least the terminal optical element 27 is disposed in the first space 12A. The optical path of the exposure light EL emitted from the exit surface 28 of the last optical element 27 is arranged in the first space 12A. That is, in the present embodiment, the first space 12A includes an optical path on the image plane side of the projection optical system PL, and includes at least a part of the optical path of the exposure light EL incident on the substrate P.

  The substrate stage 2 is movable on the guide surface 30G of the third surface plate 30 in the first space 12A. The guide surface 30G is substantially parallel to the XY plane. The third surface plate 30 is supported on the support surface FL via the vibration isolator 31. The substrate stage 2 is movable with respect to the projection region PR while holding the substrate P. The substrate stage 2 has a substrate holding portion 29 that holds the substrate P in a releasable manner. In the present embodiment, the substrate holding unit 29 holds the substrate P so that the surface (exposure surface) of the substrate P and the XY plane are substantially parallel.

  The substrate stage 2 can be moved by the operation of the drive system 5. In the present embodiment, the drive system 5 includes a planar motor for moving the substrate stage 2 on the guide surface 30G. A planar motor for moving the substrate stage 2 includes, for example, a movable element 2M arranged on the substrate stage 2 and a fixed plate arranged on the third surface plate 30 as disclosed in US Pat. No. 6,452,292. And a child 30C. In the present embodiment, the substrate stage 2 is movable in six directions including the X axis, Y axis, Z axis, θX, θY, and θZ directions by the operation of the drive system 5 including a planar motor.

  The liquid immersion member 10 is a liquid immersion member (nozzle member) as disclosed in, for example, US Patent Application Publication No. 2007/0132976 and European Patent Application Publication No. 1768170, and supplies liquid LQ. And a recovery port for recovering the liquid LQ.

  The liquid immersion member 10 is disposed in the vicinity of the last optical element 27. The liquid immersion member 10 has a lower surface 32 that can face an object arranged in the projection region PR. The liquid immersion member 10 holds the liquid LQ with the object arranged in the projection region PR, and the liquid immersion space LS so that the optical path of the exposure light EL emitted from the last optical element 27 is filled with the liquid LQ. Can be formed. The immersion space LS is a portion (space, region) filled with the liquid LQ. In the present embodiment, the object that can be arranged in the projection region PR includes at least one of the substrate stage 2 and the substrate P held on the substrate stage 2. By holding the liquid LQ between the emission surface 28 and the lower surface 32 on one side and the surface (upper surface) of the object on the other side, the optical path of the exposure light EL between the terminal optical element 27 and the object is liquid. An immersion space LS is formed so as to be filled with LQ.

  In the present embodiment, during the exposure of the substrate P, the immersion space LS is formed so that a partial region of the surface of the substrate P including the projection region PR is covered with the liquid LQ. During the exposure of the substrate P, at least a part of the interface (meniscus, edge) LG of the liquid LQ is formed between the lower surface 32 of the liquid immersion member 10 and the surface of the substrate P. That is, the exposure apparatus EX of the present embodiment employs a local liquid immersion method. The control device 11 executes the recovery operation of the liquid LQ from the recovery port in parallel with the supply operation of the liquid LQ from the supply port, so that the optical path of the exposure light EL between the terminal optical element 27 and the substrate P The immersion space LS is formed so that is filled with the liquid LQ.

  In the present embodiment, the plasma processing apparatus 101 is disposed in the first space 12A. In the present embodiment, the plasma processing apparatus 101 is supported by the first column 15 (first surface plate 20) via the support mechanism 36. In the present embodiment, the substrate stage 2 can move to a position facing the plasma processing apparatus 101, that is, below the plasma processing apparatus 101.

  The transport device 9 can transport the substrate P. The transfer device 9 can perform at least one of an operation for loading (loading) the substrate P into the substrate stage 2 and an operation for unloading (unloading) the substrate P from the substrate stage 2.

  In the present embodiment, at least a part of the transport device 9 is disposed in the fourth space 12D. When performing at least one of the operation of loading the substrate P before exposure onto the substrate stage 2 and the operation of unloading the substrate P after exposure from the substrate stage 2, at least a part of the transfer device 9 is passed through the opening 33. The first space 12A can be moved.

  A substrate replacement position CP is provided in the first space 12A. The substrate exchange position CP is a position where at least one of the operation of loading the substrate P onto the substrate stage 2 and the operation of unloading the substrate P from the substrate stage 2 can be performed. The substrate exchange position CP is a position different from the position where the exposure light EL emitted from the projection optical system PL can be irradiated. The substrate stage 2 can be moved to the substrate exchange position CP.

  In the present embodiment, the plasma processing apparatus 101 is disposed in the vicinity of the substrate exchange position CP.

  The interferometer system 7 includes the first interferometer unit 7A capable of optically measuring the position information of the mask stage 1 (mask M) in the XY plane and the position information of the substrate stage 2 (substrate P) in the XY plane. And a second interferometer unit 7B capable of optical measurement. Each of the first and second interferometer units 7A and 7B includes a plurality of laser interferometers. The first interferometer unit 7A irradiates the measurement mirror provided on the mask stage 1 with measurement light, and measures position information of the mask stage 1 (mask M) in the X axis, Y axis, and θZ directions. The second interferometer unit 7B irradiates the measurement mirror provided on the substrate stage 2 with measurement light, and measures position information of the substrate stage 2 (substrate P) in the X axis, Y axis, and θZ directions.

  When executing the exposure process of the substrate P or when executing a predetermined measurement process, the control device 11 operates the drive systems 4 and 5 based on the measurement result of the interferometer system 7 to thereby generate the mask stage 1 (mask M) and position control of the substrate stage 2 (substrate P) are executed.

  FIG. 2 is a side sectional view showing an example of the substrate P according to the present embodiment. The substrate P is a substrate on which a predetermined process is performed to form a device (device pattern). The substrate P has a circular base material W such as a semiconductor wafer such as a silicon wafer, and a predetermined material film including a photosensitive film Rg formed on the base material W. In the following description, among the material films formed on the surface (upper surface, side surface, and lower surface) of the substrate W, the surface (exposed surface) of the most surface material film is appropriately selected as the surface (upper surface, side surface, and lower surface) of the substrate P. ).

Further, in the following, in order to simplify the explanation, a case where the base material W is a silicon wafer and a material film is formed on the silicon wafer will be described as an example. In some cases, an oxide film such as SiO ₂ is used. Further, the surface (base) of the substrate W is an oxide film such as SiO ₂ formed by the previous process, an insulating film such as SiO ₂ and SiNx, a metal / conductor film such as Cu and Al—Si, amorphous Si, etc. In some cases, it may be at least one surface of a semiconductor film.

  In the present embodiment, the substrate P includes an HMDS film Mh formed on the base material W and a photosensitive film Rg formed on the HMDS film Mh. The HMDS film Mh is a film of HMDS (hexamethyldisilazane).

  The substrate P including the photosensitive film Rg is formed by the processing apparatus CD having the film forming apparatus C. The film forming apparatus C includes a first film forming apparatus C1 capable of forming the HMDS film Mh on the substrate W, and a second film forming apparatus C2 capable of forming the photosensitive film Rg on the substrate on which the HMDS film Mh is formed. including.

  The first film forming apparatus C1 includes a sealed chamber that can accommodate the substrate W and a gas supply device that supplies gaseous HMDS to the inside of the sealed chamber. The first film forming apparatus C1 supplies gaseous HMDS from the gas supply apparatus to the inside of the sealed chamber in a state where the substrate W accommodated in the sealed chamber is heated. As a result, the surface of the substrate W and the gaseous HMDS come into contact with each other, and the HMDS film Mh is formed on the surface of the substrate W.

  The second film forming apparatus C2 forms the photosensitive film Rg on the substrate on which the HMDS film Mh is formed. The process for forming the photosensitive film Rg is performed after the process for forming the HMDS film Mh is completed. The second processing apparatus C2 includes a spin coating apparatus as disclosed in, for example, US Patent Application Publication No. 2006/0068110, and a photosensitive film on a substrate (HMDS film Mh) using a spin coating method. Rg is formed.

  In the present embodiment, the photosensitive film Rg is liquid repellent (water repellent) with respect to the liquid LQ (water). For example, the contact angle between the photosensitive film Rg and the liquid LQ is 70 ° or more, preferably 90 ° or more. In the present embodiment, a chemically amplified resist that is liquid repellent (water repellent) with respect to the liquid LQ (water) is used as the photosensitive film Rg. Further, the photosensitive film Rg of this embodiment is formed of a positive resist in which a portion irradiated with the exposure light EL is removed by a development process. Further, after the photosensitive film Rg is formed, an edge rinse process is performed. The edge rinse process is a process for removing at least a part of the photosensitive film Rg formed in the peripheral region of the substrate.

  After the edge rinsing process is completed, the processing apparatus CD executes a process (baking process) for heating the photosensitive film Rg formed on the substrate. By the heating treatment, for example, the solvent in the photosensitive film Rg evaporates and the photosensitive film Rg is solidified, and the adhesion between the photosensitive film Rg and the HMDS film Mh can be further improved. Thereby, the substrate P according to this embodiment including the base material W, the HMDS film Mh, and the photosensitive film Rg is formed.

  As shown in FIG. 2, in the present embodiment, at least a part of the surface (exposed surface) of the substrate P is the surface of the photosensitive film Rg.

  FIG. 3 is a diagram illustrating an example of the plasma processing apparatus 101 according to the present embodiment. The plasma processing apparatus 101 can perform a process of increasing the liquid repellency of the surface of the substrate P with respect to the liquid LQ by bringing the plasma generated from the process gas PG into contact with the surface of the substrate P including the photosensitive film Rg. In the following description, a process (surface treatment) for improving the liquid repellency of the surface of the substrate P with respect to the liquid LQ is appropriately referred to as a liquid repellency process.

  In FIG. 3, the plasma processing apparatus 101 includes a first member 80 having a first supply port 81 capable of supplying plasma generated from the process gas PG. The first supply port 81 is disposed on the lower surface 82 of the first member 80 that can face the surface of the substrate P. The control device 11 can move the surface of the substrate P to a position facing the first supply port 81 of the plasma processing apparatus 101 by supporting the substrate P by the transfer device 9 and moving the transfer device 9. . In the present embodiment, the plasma processing apparatus 101 brings the plasma supplied from the first supply port 81 into contact with the surface of the substrate P, thereby improving the liquid repellency of the surface of the substrate P.

  In the present embodiment, the plasma processing apparatus 101 includes a discharge space 83 formed in the first member 80 and a gas supply device 84 that supplies a process gas to the discharge space 83. One end (lower end) of the discharge space 83 is connected to the first supply port 81. The gas supply device 84 introduces the process gas PG into the discharge space 83 from the other end (upper end) of the discharge space 83.

  The discharge space 83 is disposed between the opposing electrodes 85 and 85. The surface of the electrode 85 is covered with a dielectric 86. The dielectric 86 is made of a plastic such as polytetrafluoroethylene and polyethylene terephthalate, a metal oxide such as glass, silicon dioxide, aluminum oxide, zirconium dioxide and titanium dioxide, or a double oxide such as barium titanate.

  Plasma is generated in the discharge space 83 by introducing a process gas PG from the gas supply device 84 into the discharge space 83 and applying an electric field such as a high frequency, a pulse wave, or a microwave between the electrodes 85 and 85. The plasma processing apparatus 101 supplies plasma generated from at least a part of the process gas PG introduced into the discharge space 83 from the first supply port 81. The first supply port 81 supplies plasma (a gas containing plasma) to a space 87 between the lower surface 82 and the surface of the substrate P. The plasma supplied to the space 87 is in contact with the surface of the substrate P. Thereby, the substrate P is subjected to a liquid repellency treatment by the plasma.

  As described above, the plasma processing apparatus 101 of the present embodiment supplies the plasma generated by the discharge between the opposed electrodes 85 and 85 to the substrate P, and executes the surface treatment (liquid repellency treatment) of the substrate P. This is a so-called indirect plasma processing apparatus.

  In the present embodiment, the discharge space 83 is substantially at normal pressure (atmospheric pressure). That is, the plasma processing apparatus 101 of the present embodiment is a so-called normal pressure plasma processing apparatus that generates plasma by discharge at substantially normal pressure.

In the present embodiment, the process gas PG includes a fluorine compound such as carbon tetrafluoride (CF ₄ ). For example, in order to easily start and maintain a stable discharge at normal pressure, the process gas PG is made of a rare gas such as helium (He) or argon (Ar), or an inert gas such as nitrogen (N ₂ ). May be included.

  In the present embodiment, the gas supply device 84 includes a process gas supply source 88 capable of delivering the process gas PG and a supply path 91 for supplying the process gas PG from the process gas supply source 88 to the discharge space 83. A tube 93. The process gas PG delivered from the process gas supply source 88 is introduced into the discharge space 83. In the discharge space 83, plasma is generated from the process gas. The generated plasma is supplied to the surface of the substrate P from the first supply port 81 and comes into contact with the surface of the substrate P.

  In the present embodiment, the plasma processing apparatus 101 includes the second supply port 96 that supplies the second gas G2 around the space 87 to which the plasma is supplied from the first supply port 81, and the first supply port 81. And an exhaust port 97 for discharging at least a part of the gas in the space 87 supplied with plasma. In the present embodiment, the second supply port 96 and the exhaust port 97 are disposed in the second member 98. The second member 98 is disposed on at least a part of the periphery of the first member 80. The second supply port 96 is connected to the second gas supply source 103 via the flow path 104. The flow path 104 includes an internal flow path of the second member 98 and a flow path formed by a supply pipe that connects the internal flow path and the second gas supply source 103. The exhaust port 97 is connected to a suction device 105 including a vacuum system via a flow path 106. The flow path 106 includes an internal flow path of the second member 98 and a flow path formed by an exhaust pipe that connects the internal flow path and the suction device 105.

  The second supply port 96 and the exhaust port 97 are disposed on the lower surface 99 of the second member 98 that can face the surface of the substrate P. The exhaust port 97 is disposed at least at a part around the first supply port 81. The second supply port 96 is disposed at least at a part around the exhaust port 97.

  The control device 11 performs the gas discharge operation using the exhaust port 97 in parallel with the gas supply operation using the second supply port 96, whereby the first member 80 to which plasma is supplied from the first supply port 81. A gas seal 107 is formed around a space 87 between the lower surface 82 and the surface of the substrate P. Thereby, the plasma supplied from the first supply port 81 is suppressed from being released to the outside of the space 87.

  In the present embodiment, the second gas G2 supplied from the second supply port 96 has substantially the same temperature (for example, 23 ° C.) as the gas supplied from the environment control device 24A to the first space 12A. Since the temperature of the second gas G2 supplied from the second supply port 96 and the temperature of the gas supplied from the environment control device 24A to the first space 12A are substantially the same, the environment (temperature) is adjusted by the environment control device 24A. Even if the second gas G2 is supplied from the second supply port 96 to the first space 12A, a change in the environment (for example, temperature and refractive index) of the first space 12A can be suppressed.

  In the present embodiment, the second gas G2 supplied from the second supply port 96 is substantially the same type as the gas supplied from the environment control device 24A to the first space 12A. In the present embodiment, the gas supplied from the environment control device 24A to the first space 12A is air. In the present embodiment, the second supply port 96 supplies air. Since the type of the second gas G2 supplied from the second supply port 96 is almost the same as the type of gas supplied from the environment control device 24A to the first space 12A, the environment is adjusted by the environment control device 24A. Even if the second gas G2 flows out from the second supply port 96 into the first space 12A, a change in the environment (for example, refractive index) of the first space 12A can be suppressed.

  Note that the temperature of the second gas G2 supplied from the second supply port 96 is substantially the same as the temperature of the second space 12B, the third space 12C, and the fourth space 12D. It may be adjusted.

  The second gas G2 may not be the same temperature as the gas supplied from the environment control device 24A to the first space 12A, or may be of a different type.

  Next, an example of the operation of the above-described device manufacturing system SYS will be described with reference to the flowchart of FIG. 4 and the schematic diagrams of FIGS.

  A substrate P including the photosensitive film Rg is formed by the processing apparatus CD. The processing apparatus CD forms a material film including the HMDS film Mh and the photosensitive film Rg on the substrate W (step S1). In the processing apparatus CD, the HMDS film Mh is formed on the substrate W by the first film forming apparatus C1, and then the photosensitive film Rg is formed by the second film forming apparatus C2. The base material W before the material film is formed may or may not have undergone at least one lithography process (exposure process).

  The substrate P formed by the processing apparatus CD is supplied to the exposure apparatus EX via the interface IF (step S2). The substrate P from the processing apparatus CD is supplied to the fourth space 12D. The control device 11 supports the unexposed substrate P supplied from the processing device CD by the transport device 9 disposed in the fourth space 12D (step S3).

  The control device 11 moves the transfer device 9 that supports the substrate P to the first space 12 </ b> A through the opening 33. The control device 11 adjusts the position of the transfer device 9 so that the first supply port 81 of the plasma processing apparatus 101 faces the surface of the substrate P supported by the transfer device 9 (step S4).

  The control device 11 operates the plasma processing apparatus 101 to supply plasma generated from the process gas PG from the first supply port 81. Thereby, as shown in FIG. 5, the surface of the substrate P supplied from the first supply port 81 comes into contact with the plasma, and the liquid repellency with respect to the liquid LQ on the surface of the substrate P is increased (step S5).

  In the present embodiment, the plasma processing apparatus 101 is disposed in the vicinity of the substrate exchange position CP. In the vicinity of the substrate exchange processing position CP, the plasma processing apparatus 101 performs the first supply so that the surface of the substrate P supported by the transfer device 9 comes into contact with the plasma before the substrate P is held on the substrate stage 2. Plasma is supplied from the port 81.

  In the present embodiment, the control device 11 controls the transport device 9 to move the first surface while moving the surface of the substrate P in the XY direction (direction parallel to the surface of the substrate P) with respect to the first supply port 81. Plasma is supplied from the supply port 81. Thereby, the control apparatus 11 can make the plasma supplied from the 1st supply port 81 contact the most area | regions of the surface (upper surface) of the board | substrate P. FIG. That is, the control device 11 can improve the liquid repellency with respect to the liquid LQ in the most region of the surface (upper surface) of the substrate P that can face the first supply port 81 using the plasma processing apparatus 101. The control device 11 performs the surface treatment of the substrate P using the plasma processing device 101 so that at least the liquid repellency with respect to the liquid LQ on the surface of the photosensitive film Rg irradiated with the exposure light EL is increased.

  Further, in the present embodiment, the plasma processing apparatus 101 uses plasma not only on the surface of the photosensitive film Rg irradiated with the exposure light EL, but also on the peripheral region of the upper surface of the substrate P subjected to the edge rinse processing and the side surface of the substrate P. The plasma can be supplied so as to be in contact with. In the present embodiment, the peripheral region of the upper surface of the substrate P subjected to the edge rinse process and the side surface of the substrate P are formed by the surface of the HMDS film Mh. Note that at least one of the peripheral region on the upper surface of the substrate P subjected to the edge rinse process and the side surface of the substrate P may be the surface of the base material W. When the plasma supplied from the first supply port 81 comes into contact with the upper surface and the side surface of the substrate P, the liquid repellency of the upper surface and the side surface of the substrate P with respect to the liquid LQ can be improved.

  After the surface treatment using the plasma processing apparatus 101 is completed, the control apparatus 11 stops the supply of plasma from the first supply port 81 and controls the transfer apparatus 9 to be arranged at the substrate exchange position CP. The substrate P is loaded on the substrate stage 2 (step S6).

  After the substrate P is loaded on the substrate stage 2, the control device 11 moves the substrate stage 2 holding the substrate P to a position facing the emission surface 27 and the lower surface 32. The control device 11 is immersed in the liquid LQ between the emission surface 27 and the lower surface 32 and the surface of the substrate P so that the optical path of the exposure light EL between the terminal optical element 27 and the substrate P is filled with the liquid LQ. A space LS is formed. The control device 11 irradiates the surface of the substrate P in contact with the plasma (the surface of the photosensitive film Rg) with the exposure light EL through the liquid LQ to expose the substrate P (step S7).

  The exposure apparatus EX of the present embodiment is a scanning exposure apparatus (so-called scanning stepper) that projects an image of the pattern of the mask M onto the substrate P while synchronously moving the mask M and the substrate P in a predetermined scanning direction. On the substrate P, a plurality of shot areas which are exposure target areas are set. During exposure of the shot area of the substrate P, the mask M and the substrate P are moved in a predetermined scanning direction in the XY plane. In the present embodiment, the scanning direction (synchronous movement direction) of the substrate P is the Y-axis direction, and the scanning direction (synchronous movement direction) of the mask M is also the Y-axis direction. The control device 11 moves the shot region of the substrate P in the Y-axis direction with respect to the projection region PR, and in synchronization with the movement of the substrate P in the Y-axis direction, the pattern of the mask M with respect to the illumination region IR. The substrate P is irradiated with the exposure light EL via the projection optical system PL and the liquid LQ in the immersion space LS while moving in the Y axis direction in the formation region. Thereby, the shot area of the substrate P is exposed through the liquid LQ with the exposure light EL from the projection optical system PL (terminal optical element 27), and the pattern image of the mask M is projected onto the shot area of the substrate P. .

  Before the exposure of the substrate P is started, the liquid repellency of the surface of the substrate P with respect to the liquid LQ is enhanced by the plasma processing apparatus 101. Accordingly, even when exposure is performed while moving the substrate P in a state where the surface of the substrate P is in contact with the liquid LQ, the liquid LQ is well held between the emission surface 27 and the lower surface 32 and the surface of the substrate P. The Therefore, the liquid LQ is prevented from leaking out from the space between the emission surface 27 and the lower surface 32 and the surface of the substrate P, and the liquid LQ (liquid LQ film, droplets, etc.) remaining on the substrate P is suppressed. The

  Further, at the time of exposure of the substrate P, for example, as shown in FIG. 6, the liquid LQ in the immersion space LS is disposed on the side surface of the substrate P held by the substrate holding unit 29 and around the substrate P. There is a possibility of being disposed on a gap G formed between the substrate stage 2 and the substrate stage 2. In this embodiment, since the liquid repellency with respect to the liquid LQ on the peripheral region and the side surface of the upper surface of the substrate P is enhanced by the plasma processing apparatus 101, the liquid LQ is prevented from entering the gap G.

  After the exposure of the substrate P is completed, the control device 11 moves the substrate stage 2 holding the exposed substrate P to the substrate replacement position CP. The controller 11 unloads the exposed substrate P from the substrate stage 2 using the transport device 9 (step S8).

  The exposed substrate P unloaded from the substrate stage 2 is transported to the processing apparatus CD via the interface IF. The processing apparatus CD executes predetermined process processing including post-baking processing and developing processing of the substrate P using the developing device D (step S9).

  As described above, according to the present embodiment, the liquid repellency with respect to the liquid LQ on the surface of the substrate P can be improved using the plasma processing apparatus 101. Therefore, it is possible to prevent the liquid LQ in the immersion space LS formed on the substrate P from leaking out or the liquid LQ (for example, a liquid LQ film or a droplet) from remaining on the substrate P. Therefore, it is possible to suppress the occurrence of exposure failure and the occurrence of defective devices.

  In the above-described embodiment, the plasma processing apparatus 101 can supply the plasma so that the surface of the substrate P is in contact with the plasma after the substrate P is held on the substrate stage 2. For example, as shown in FIG. 7, the control device 11 loads the substrate P 2 supplied from the processing device CD onto the substrate stage 2 disposed at the substrate replacement position CP using the transport device 9. The position of the substrate stage 2 is controlled so that the surface of the substrate P held on the substrate stage 2 faces the first supply port 81 of the plasma processing apparatus 101. The control device 11 supplies plasma from the first supply port 81 with the first supply port 81 and the surface of the substrate P held by the substrate stage 2 facing each other. As a result, the plasma processing apparatus 101 can bring the surface of the substrate P into contact with the plasma after the substrate P is held on the substrate stage 2. Further, the control device 11 controls the substrate stage 2 to move the first supply port 81 while moving the surface of the substrate P in the XY direction (direction parallel to the surface of the substrate P) with respect to the first supply port 81. By supplying more plasma, the plasma supplied from the first supply port 81 can be brought into contact with most of the region on the upper surface of the substrate P.

  In the above embodiment, the case where at least a part of the surface (exposed surface) of the substrate P is the surface of the photosensitive film Rg has been described as an example. However, as shown in FIG. 8, the photosensitive film Rg is protected. It may be the surface of the protective film Tc. The substrate Pb shown in FIG. 8 is formed so as to cover the base material W, the HMDS film Mh formed on the base material W, the photosensitive film Rg formed on the MHDS film Mh, and the photosensitive film Rg. And a protective film Tc. The protective film Tc can be formed by the film forming apparatus C of the processing apparatus CD. The protective film Tc is formed on the substrate including the photosensitive film Rg after forming the photosensitive film Rg on the substrate.

  Prior to exposing the substrate Pb, the control device 11 supplies plasma from the first supply port 81 of the plasma processing apparatus 101 to bring the surface of the substrate Pb including the surface of the protective film Tc into contact with the plasma. The liquid repellency of the surface of the substrate Pb with respect to the liquid LQ can be enhanced.

  In the above-described embodiment, the case where the processing using the plasma processing apparatus 101 is performed near the substrate replacement position CP has been described as an example. However, if the liquid repellent processing of the substrate P can be performed, The plasma processing apparatus 101 can be arranged at an arbitrary place. For example, the plasma processing apparatus 101 can be disposed in the vicinity of the liquid immersion member 10.

  In addition, when an immersion member that forms a gas seal around the immersion space LS as disclosed in, for example, US Pat. No. 6,952,253, is used as the immersion member. Plasma may be supplied from a gas supply port. Further, gas containing plasma and gas generated by plasma treatment can be exhausted from a gas recovery port for forming a gas seal.

  In the above-described embodiment, the case where the exposure apparatus EX includes the plasma processing apparatus 101 has been described as an example. However, the plasma processing apparatus may be disposed outside the exposure apparatus EX. The substrate P on which the photosensitive film Rg is formed is subjected to a lyophobic process using a plasma processing apparatus disposed outside the exposure apparatus EX, and the lyophobized substrate P is supplied to the exposure apparatus EX. Then, the substrate P may be exposed. Further, the plasma processing apparatus may be disposed in the processing apparatus CD.

  In the above-described embodiment, the case where the plasma processing apparatus 101 is a so-called indirect method has been described as an example. However, for example, US Patent Application Publication No. 2008/0115892, US Patent Application Publication No. 2008 / The plasma generated by the discharge between the electrode and the substrate P (Pb), as disclosed in the specification of No. 0193342, and the substrate P (Pb) is opposed to the substrate P (Pb). A so-called direct-type plasma processing apparatus that performs the surface treatment may be used. Even when a direct plasma processing apparatus is used, the liquid repellency of the substrate P (Pb) with respect to the liquid LQ can be improved by using the process gas PG as the process gas.

  In the above-described embodiment, the optical path on the exit side (image plane side) of the terminal optical element 27 of the projection optical system PL is filled with the liquid LQ, but is disclosed in, for example, International Publication No. 2004/019128 Pamphlet. As described above, the projection optical system PL in which the optical path on the incident side (object plane side) of the terminal optical element 27 is also filled with the liquid LQ can be employed.

  In each of the above-described embodiments, water is used as the liquid LQ, but a liquid LQ other than water may be used. The liquid LQ is a film such as a photosensitive material (photoresist) that is transmissive to the exposure light EL, has a high refractive index with respect to the exposure light EL, and forms the surface of the projection optical system PL or the substrate P. Stable ones are preferable. For example, hydrofluoroether (HFE), perfluorinated polyether (PFPE), fomblin oil, or the like can be used as the liquid LQ. In addition, various fluids such as a supercritical fluid can be used as the liquid LQ.

  As the substrate P in each of the above embodiments, not only a semiconductor wafer for manufacturing a semiconductor device, but also a glass substrate P for a display device, a ceramic wafer for a thin film magnetic head, or a mask M used in an exposure apparatus EX or A reticle original (synthetic quartz, silicon wafer) or the like is applied.

  As the exposure apparatus EX, in addition to the step-and-scan type scanning exposure apparatus EX (scanning stepper) that scans and exposes the pattern of the mask M by moving the mask M and the substrate P synchronously, the mask M and the substrate P are used. Can be applied to a step-and-repeat projection exposure apparatus (stepper) in which the pattern of the mask M is collectively exposed in a stationary state and the substrate P is sequentially moved stepwise.

  Furthermore, in the step-and-repeat exposure, after the reduced image of the first pattern is transferred onto the substrate P using the projection optical system PL while the first pattern and the substrate P are substantially stationary, the second pattern In a state where the pattern and the substrate P are substantially stationary, a reduced image of the second pattern may be partially overlapped with the first pattern using the projection optical system PL and may be collectively exposed on the substrate P (stitch-type batch). Exposure equipment). Further, the stitch type exposure apparatus can be applied to a step-and-stitch type exposure apparatus in which at least two patterns are partially transferred on the substrate P, and the substrate P is sequentially moved.

  Further, as disclosed in, for example, US Pat. No. 6,611,316, the patterns of the two masks M are synthesized on the substrate P via the projection optical system PL, and the substrate P is subjected to one scanning exposure. The present invention can also be applied to an exposure apparatus that performs double exposure of one shot area almost simultaneously. The present invention can also be applied to proximity type exposure apparatuses, mirror projection aligners, and the like.

  The present invention also relates to a twin-stage type exposure having a plurality of substrate stages as disclosed in US Pat. No. 6,341,007, US Pat. No. 6,208,407, US Pat. No. 6,262,796, and the like. It can also be applied to devices.

  Further, the present invention relates to a substrate stage that can move while holding the substrate P, as disclosed in, for example, US Pat. No. 6,897,963, US Patent Application Publication No. 2007/0127006, and the like, It is applicable also to an exposure apparatus provided with a movable measurement stage mounted with a measurement member (measuring instrument) for measuring the exposure light EL without holding it.

  The present invention can also be applied to an exposure apparatus that includes a plurality of substrate stages and measurement stages.

  The type of exposure apparatus EX is not limited to an exposure apparatus for manufacturing a semiconductor element that exposes a semiconductor element pattern onto a substrate P, but an exposure apparatus for manufacturing a liquid crystal display element or a display, a thin film magnetic head, an image sensor (CCD). It can also be widely applied to an exposure apparatus for manufacturing a micromachine, MEMS, DNA chip, reticle, mask M, or the like.

  In each of the above-described embodiments, the position information of each stage is measured using an interferometer system including a laser interferometer. However, the present invention is not limited thereto, and, for example, US Patent Application Publication No. 2008/0088843 is disclosed. An encoder system that detects a scale (diffraction grating) provided in each stage, as disclosed in the document, may be used.

  In the above-described embodiment, the mask M includes a reticle on which a device pattern projected onto the substrate P is formed. As the mask M, for example, a transmissive mask having a transparent plate such as a glass plate and a predetermined light shielding pattern (or phase pattern / dimming pattern) formed on the transparent plate can be used. A reflective mask can also be used as the mask M. Further, instead of the mask M, for example, as disclosed in US Pat. No. 6,778,257, a variable shaping mask that forms a transmission pattern, a reflection pattern, or a light emission pattern based on electronic data of a pattern to be exposed. (Also called an electronic mask, an active mask, or an image generator) may be used. Further, a pattern forming apparatus including a self-luminous image display element may be provided instead of the variable molding mask including the non-luminous image display element.

  In each of the above embodiments, the exposure apparatus EX including the projection optical system PL has been described as an example. However, the present invention can be applied to an exposure apparatus and an exposure method that do not use the projection optical system PL. Even when the projection optical system PL is not used, the exposure light EL is irradiated onto the substrate P through an optical member such as a lens, and the immersion space LS is placed in a predetermined space between the optical member and the substrate P. Is formed.

  Further, as disclosed in, for example, International Publication No. 2001/035168, an exposure apparatus (lithography system) that exposes a line and space pattern on the substrate P by forming interference fringes on the substrate P. The present invention can also be applied to.

  The exposure apparatus EX of the above-described embodiment is manufactured by assembling various subsystems including the respective constituent elements recited in the claims of the present application so as to maintain predetermined mechanical accuracy, electrical accuracy, and optical accuracy. Is done. In order to ensure these various accuracies, before and after assembly, various optical systems are adjusted to achieve optical accuracy, various mechanical systems are adjusted to achieve mechanical accuracy, and various electrical systems are Adjustments are made to achieve electrical accuracy. The assembly process from the various subsystems to the exposure apparatus includes mechanical connection, electrical circuit wiring connection, pneumatic circuit piping connection and the like between the various subsystems. Needless to say, there is an assembly process for each subsystem before the assembly process from the various subsystems to the exposure apparatus. After the assembly process of the various subsystems to the exposure apparatus is completed, comprehensive adjustment is performed to ensure various accuracies as the entire exposure apparatus. The exposure apparatus is preferably manufactured in a clean room where the temperature, cleanliness, etc. are controlled.

  As shown in FIG. 9, the microdevice such as a semiconductor device is a step 201 for designing a function / performance of the microdevice, a step 202 for producing a mask M (reticle) based on this design step, and a substrate of the device. Step 203 of manufacturing (forming) the substrate P, substrate processing (exposure) including exposing the substrate P with the exposure light EL from the pattern of the mask M and developing the exposed substrate P according to the above-described embodiment Substrate processing step 204 including processing), device assembly step (including processing processes such as dicing process, bonding process, and packaging process) 205, inspection step 206, and the like.

  Note that the requirements of the above-described embodiments can be combined as appropriate. Some components may not be used. In addition, as long as permitted by law, the disclosure of all published publications and US patents related to the exposure apparatus and the like cited in the above-described embodiments and modifications are incorporated herein by reference.

It is a schematic block diagram which shows an example of the exposure apparatus which concerns on this embodiment. It is sectional drawing which shows typically an example of the board | substrate which concerns on this embodiment. It is a figure which shows an example of the plasma processing apparatus which concerns on this embodiment. It is a flowchart which shows an example of operation | movement of the device manufacturing system which concerns on this embodiment. It is a figure for demonstrating an example of operation | movement of the exposure apparatus which concerns on this embodiment. It is a figure for demonstrating an example of operation | movement of the exposure apparatus which concerns on this embodiment. It is a figure for demonstrating an example of operation | movement of the exposure apparatus which concerns on this embodiment. It is sectional drawing which shows typically an example of the board | substrate which concerns on this embodiment. It is a flowchart for demonstrating an example of the manufacturing process of a microdevice.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 2 ... Substrate stage, 9 ... Conveyance apparatus, 10 ... Liquid immersion member, 11 ... Control apparatus, 12A ... 1st space, 12B ... 2nd space, 12C ... 3rd space, 12D ... 4th space, 24A-24D ... Environment Adjustment device, 81 ... first supply port, 83 ... discharge space, 87 ... space, 96 ... second supply port, 97 ... exhaust port, 101 ... plasma treatment device, C ... film formation device, C1 ... first film formation device C2 ... second film forming device, CD ... processing device, D ... developing device, EL ... exposure light, EX ... exposure device, LQ ... liquid, LS ... immersion space, P ... substrate, Rg ... photosensitive film, SYS ... Device manufacturing system, Tc ... protective film

Claims (16)

Bringing the surface of the substrate including the photosensitive film into contact with the plasma generated from the process gas to increase the liquid repellency of the substrate surface with respect to the liquid;
Irradiating at least a part of the surface of the substrate in contact with the plasma with exposure light through the liquid to expose the substrate.   The substrate processing method according to claim 1, wherein the process gas contains a fluorine compound.   The substrate processing method according to claim 1, wherein at least a part of the surface of the substrate includes the surface of the photosensitive film. Forming a protective film for protecting the photosensitive film after forming the photosensitive film,
The substrate processing method according to claim 1, wherein at least a part of the surface of the substrate includes the surface of the protective film. Exposing the substrate using the substrate processing method according to any one of claims 1 to 4,
Developing the exposed substrate; and a substrate processing method. A film forming apparatus for forming a substrate including a photosensitive film;
A plasma processing apparatus for bringing the plasma generated from the process gas into contact with the surface of the substrate including the photosensitive film and increasing the liquid repellency with respect to the liquid on the surface of the substrate;
A device manufacturing system comprising: an immersion exposure apparatus that exposes the substrate by irradiating at least a part of a surface of the substrate in contact with the plasma with exposure light through the liquid.   The device manufacturing system according to claim 6, wherein the process gas contains a fluorine compound.   The device manufacturing system according to claim 6, further comprising a developing device that develops the exposed substrate. An exposure apparatus that exposes a substrate with exposure light through a liquid,
A substrate holding member that holds the substrate and is movable relative to a position where the exposure light can be irradiated;
A plasma processing apparatus that brings plasma generated from a process gas into contact with the surface of the substrate before the substrate is exposed to the exposure light, thereby improving liquid repellency with respect to the liquid on the surface of the substrate; ,
An exposure apparatus in which exposure light is irradiated via a liquid onto at least a part of the surface of the substrate in contact with the plasma.   The exposure apparatus according to claim 9, wherein the plasma processing apparatus supplies the plasma so that a surface of the substrate is in contact with the plasma before or after the substrate is held by the substrate holding member.   The exposure apparatus according to claim 9 or 10, wherein the process gas contains a fluorine compound. A predetermined space;
An adjustment device that adjusts the environment of the predetermined space by supplying a first gas to the predetermined space;
The plasma processing apparatus is supplied with plasma from a first supply port for supplying the plasma, a second supply port for supplying a second gas around a space to which the plasma is supplied, and the first supply port. An exhaust port for discharging at least part of the gas in the space;
The exposure apparatus according to claim 9, wherein the second gas has substantially the same temperature as the first gas.   The exposure apparatus according to claim 12, wherein the second gas is substantially the same type as the first gas.   The plasma processing apparatus introduces the process gas into a discharge space between opposing electrodes, and supplies plasma generated from at least a part of the process gas introduced into the discharge space. An exposure apparatus according to claim 1.   The exposure apparatus according to claim 14, wherein the discharge space is substantially at normal pressure. Exposing the substrate using the exposure apparatus according to any one of claims 9 to 15,
Developing the exposed substrate; and a device manufacturing method.

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