JP2010108976A - 半導体装置およびその製造方法 - Google Patents

半導体装置およびその製造方法 Download PDF

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Publication number
JP2010108976A
JP2010108976A JP2008276620A JP2008276620A JP2010108976A JP 2010108976 A JP2010108976 A JP 2010108976A JP 2008276620 A JP2008276620 A JP 2008276620A JP 2008276620 A JP2008276620 A JP 2008276620A JP 2010108976 A JP2010108976 A JP 2010108976A
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Japan
Prior art keywords
gate electrode
film
control gate
semiconductor device
semiconductor substrate
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JP2008276620A
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JP2010108976A5 (enExample
Inventor
Sachiyuki Kawashima
祥之 川嶋
Kota Funayama
幸太 舟山
Koji Hashimoto
孝司 橋本
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Renesas Technology Corp
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Renesas Technology Corp
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Priority to JP2008276620A priority Critical patent/JP2010108976A/ja
Publication of JP2010108976A publication Critical patent/JP2010108976A/ja
Publication of JP2010108976A5 publication Critical patent/JP2010108976A5/ja
Pending legal-status Critical Current

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JP2008276620A 2008-10-28 2008-10-28 半導体装置およびその製造方法 Pending JP2010108976A (ja)

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JP2008276620A JP2010108976A (ja) 2008-10-28 2008-10-28 半導体装置およびその製造方法

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JP2008276620A JP2010108976A (ja) 2008-10-28 2008-10-28 半導体装置およびその製造方法

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JP2010108976A true JP2010108976A (ja) 2010-05-13
JP2010108976A5 JP2010108976A5 (enExample) 2011-12-01

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JP2008276620A Pending JP2010108976A (ja) 2008-10-28 2008-10-28 半導体装置およびその製造方法

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2579314A2 (en) 2011-10-04 2013-04-10 Renesas Electronics Corporation Semiconductor device and manufacturing method of semiconductor device
JP2013516790A (ja) * 2010-01-07 2013-05-13 フリースケール セミコンダクター インコーポレイテッド スプリットゲート不揮発性メモリセルの作製に有用な半導体構造を形成する方法
JP2015095633A (ja) * 2013-11-14 2015-05-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9159843B2 (en) 2011-05-27 2015-10-13 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
US9257446B2 (en) 2013-11-26 2016-02-09 Renesas Electronics Corporation Semiconductor device and method of manufacturing same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003046002A (ja) * 2001-07-26 2003-02-14 Sony Corp 不揮発性半導体メモリ装置およびその動作方法
JP2003309193A (ja) * 2002-04-18 2003-10-31 Hitachi Ltd 半導体集積回路装置及び半導体集積回路装置の製造方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003046002A (ja) * 2001-07-26 2003-02-14 Sony Corp 不揮発性半導体メモリ装置およびその動作方法
JP2003309193A (ja) * 2002-04-18 2003-10-31 Hitachi Ltd 半導体集積回路装置及び半導体集積回路装置の製造方法

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013516790A (ja) * 2010-01-07 2013-05-13 フリースケール セミコンダクター インコーポレイテッド スプリットゲート不揮発性メモリセルの作製に有用な半導体構造を形成する方法
US9159843B2 (en) 2011-05-27 2015-10-13 Renesas Electronics Corporation Semiconductor device and method of manufacturing the same
EP2579314A2 (en) 2011-10-04 2013-04-10 Renesas Electronics Corporation Semiconductor device and manufacturing method of semiconductor device
US9245900B2 (en) 2011-10-04 2016-01-26 Renesas Electronics Corporation Semiconductor device and manufacturing method of semiconductor device
US9825049B2 (en) 2011-10-04 2017-11-21 Renesas Electronics Corporation Semiconductor device and manufacturing method of semiconductor device
JP2015095633A (ja) * 2013-11-14 2015-05-18 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US9257446B2 (en) 2013-11-26 2016-02-09 Renesas Electronics Corporation Semiconductor device and method of manufacturing same
US9508837B2 (en) 2013-11-26 2016-11-29 Renesas Electronics Corporation Semiconductor device and method of manufacturing same

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