JP2010108385A5 - - Google Patents

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Publication number
JP2010108385A5
JP2010108385A5 JP2008281957A JP2008281957A JP2010108385A5 JP 2010108385 A5 JP2010108385 A5 JP 2010108385A5 JP 2008281957 A JP2008281957 A JP 2008281957A JP 2008281957 A JP2008281957 A JP 2008281957A JP 2010108385 A5 JP2010108385 A5 JP 2010108385A5
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JP
Japan
Prior art keywords
data
random access
access memory
semiconductor random
writing
Prior art date
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Pending
Application number
JP2008281957A
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English (en)
Japanese (ja)
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JP2010108385A (ja
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Priority to JP2008281957A priority Critical patent/JP2010108385A/ja
Priority claimed from JP2008281957A external-priority patent/JP2010108385A/ja
Publication of JP2010108385A publication Critical patent/JP2010108385A/ja
Publication of JP2010108385A5 publication Critical patent/JP2010108385A5/ja
Pending legal-status Critical Current

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JP2008281957A 2008-10-31 2008-10-31 記憶装置 Pending JP2010108385A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008281957A JP2010108385A (ja) 2008-10-31 2008-10-31 記憶装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008281957A JP2010108385A (ja) 2008-10-31 2008-10-31 記憶装置

Publications (2)

Publication Number Publication Date
JP2010108385A JP2010108385A (ja) 2010-05-13
JP2010108385A5 true JP2010108385A5 (enExample) 2012-01-12

Family

ID=42297749

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008281957A Pending JP2010108385A (ja) 2008-10-31 2008-10-31 記憶装置

Country Status (1)

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JP (1) JP2010108385A (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4966404B2 (ja) 2010-10-21 2012-07-04 株式会社東芝 メモリ制御装置、記憶装置、及びメモリ制御方法
JP2012137341A (ja) 2010-12-24 2012-07-19 Toshiba Corp 電子機器、及び同電子機器における蓄電器静電容量検出方法
JP5914148B2 (ja) * 2012-05-07 2016-05-11 株式会社バッファローメモリ Ｓｓｄ（ソリッドステートドライブ）装置
JP6467636B2 (ja) * 2014-08-28 2019-02-13 パナソニックＩｐマネジメント株式会社 メモリカード
JP6406707B2 (ja) * 2015-03-23 2018-10-17 東芝メモリ株式会社 半導体記憶装置
JP6715297B2 (ja) * 2018-09-11 2020-07-01 キオクシア株式会社 半導体記憶装置の制御方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001051896A (ja) * 1999-08-04 2001-02-23 Hitachi Ltd 記憶装置
US7631138B2 (en) * 2003-12-30 2009-12-08 Sandisk Corporation Adaptive mode switching of flash memory address mapping based on host usage characteristics
JP2006252535A (ja) * 2005-02-09 2006-09-21 Hitachi Ulsi Systems Co Ltd 記憶装置
JP4135747B2 (ja) * 2006-04-06 2008-08-20 ソニー株式会社 データ処理装置及びフラッシュメモリへのアクセス方法
JP4447636B2 (ja) * 2007-12-21 2010-04-07 ソリッド ステート ストレージ ソリューションズ エルエルシー メモリシステム

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