JP2010103252A - Substrate treating device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a substrate treating device for allowing a substrate detection sensor to correctly detect existence of a wafer even when carrying the substrate by using two substrate placement boards, and hardly has spatial restriction. <P>SOLUTION: The substrate treating device having a substrate carrier module 4 for carrying the substrate 12 by using the two upper and lower substrate placement boards 81, 82 includes: an upper reflection type optical substrate detector 85 arranged at a position to face the upper placement board; and a lower reflection type optical substrate detector 88 arranged at a position to face the lower placement board. The upper reflection type optical substrate detector emits light, and then, the existence of the substrate is detected by whether the upper reflection type optical substrate detector receives the light reflected against the lower placement board or not. The lower reflection type optical substrate detector emits light, and then, the existence of the substrate is detected by whether the lower reflection type optical substrate detector receives the light reflected against the upper placement board or not. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a substrate processing apparatus that forms a thin film on a substrate such as a silicon wafer or a glass substrate, or performs processing such as impurity diffusion, etching, ashing, and annealing treatment.

  One of the processes for manufacturing a semiconductor device is a substrate process for performing a thin film formation process, impurity diffusion, etching, ashing, annealing treatment, etc. on a substrate (wafer). In the process of performing substrate processing, there is a process of transferring a wafer from a load lock chamber to a process chamber by a transfer chamber. When transferring wafers, there are cases where one wafer is transferred and two wafers are transferred. In either case, the presence or absence of a wafer is accurately detected in the transfer process in order to confirm that the transfer has been carried out reliably. There is a need to.

  In a conventional substrate processing apparatus, a transmissive sensor is used to detect the presence or absence of a wafer. The transmissive sensor is composed of a projector and a light receiver, and is ON if the light emitted from the projector is detected by the light receiver, and is OFF if the light cannot be received by the light receiver. It is.

  Whether the wafer is present or not is determined by installing the transmissive sensor at a position sandwiching the wafer, and when the light projector detects the light emitted from the light projector when the light projector is operated, there is no wafer. If the light emitted from the projector is blocked by the wafer and the light receiver cannot detect the light, it is determined that there is a wafer.

  However, in the conventional case, there is a restriction that the transmissive sensor itself cannot be installed when the projector and the light receiver cannot be installed at a position where the wafer is sandwiched. In addition, since the wafer is detected as having a wafer by blocking the optical path, it can be determined that only one or two wafers are being transported, and only one or two wafers are being transported. It cannot be determined whether it exists. For this reason, accurate wafer detection cannot be performed, and there is a problem that the wafer is damaged when the wafer is transferred in duplicate.

JP 2006-86180 A

  In view of such circumstances, the present invention enables a substrate detection sensor to accurately detect the presence or absence of a wafer even when a substrate is transported using two substrate receiving plates, and is not subject to spatial constraints. A processing apparatus is provided.

  The present invention relates to a substrate processing apparatus having a substrate transport module that transports a substrate using two upper and lower substrate receiving plates, and an upper reflective optical substrate detector at a position that can face the upper receiving plate. And a lower reflective optical substrate detector at a position that can face the lower receiving plate, the upper reflective optical substrate detector emits light, and the light reflected by the lower receiving plate is The presence or absence of the substrate is detected based on whether the upper reflection type optical substrate detector receives light, the lower reflection type optical substrate detector emits light, and the light reflected by the upper receiving plate is converted into the lower reflection type light. The present invention relates to a substrate processing apparatus that detects the presence or absence of a substrate based on whether or not the substrate detector receives light.

  According to the present invention, in a substrate processing apparatus including a substrate transport module unit that transports a substrate using two upper and lower substrate receiving plates, the upper reflective optical substrate is placed at a position that can face the upper receiving plate. A detector is provided, and a lower reflective optical substrate detector is provided at a position that can face the lower receiving plate, and the upper reflective optical substrate detector emits light and is reflected by the lower receiving plate. Whether the upper reflection type optical substrate detector receives light or not, detects the presence or absence of the substrate, the lower reflection type optical substrate detector emits light, and the light reflected by the upper receiving plate is reflected by the lower reflection Since the presence or absence of the substrate is detected based on whether the mold optical substrate detector receives light, the detection result of the upper receiving plate is not interfered with the detection result of the lower receiving plate, and the detection result of the lower receiving plate Since the upper receiving plate and the lower receiving plate are not interfered with by the detection result of the upper receiving plate, accurate substrate detection is performed. In addition to the presence or absence of light reception, the upper and lower reflection type optical substrate detectors are also position detectors, so even if reflected light returns, the distance between the upper and lower substrates (between the upper and lower receiving plates) Is a distance that can be sufficiently detected by the upper and lower reflection type optical substrate detectors, and exhibits the excellent effect that the presence or absence of the substrate can be determined.

  The best mode for carrying out the present invention will be described below with reference to the drawings.

  First, in FIG. 1 to FIG. 3, an ashing apparatus for performing an ashing process as an example of the substrate processing apparatus of the present invention will be described.

  The asher apparatus 1 includes an EFEM (Equipment Front End Module) 2, a load lock chamber unit 3, a transfer module unit 4, a process chamber unit 5 used as a processing chamber in which an ashing process is performed, and a controller 20. The controller 20 controls driving of the EFEM 2, the load lock chamber unit 3, the transfer module unit 4, and the process chamber unit 5.

  The EFEM 2 includes a first FOUP (Front Opening Unified Pod) 6, a second FOUP 7, an atmospheric robot 8 that is a first transfer unit that transfers the wafer 12 from the first FOUP 6 and the second FOUP 7 to the load lock chamber unit 3. The first FOUP 6 and the second FOUP 7 accommodate 25 wafers 12, and the atmospheric robot 8 has an arm portion that can traverse, advance, retreat, and rotate, and five wafers 12 are provided at the tip of the arm portion. A tweezer 10 that can be placed together is provided. The arm portion pulls out the wafers 12 from the first FOUP 6 or the second FOUP 7 and transports them.

  The load lock chamber unit 3 includes a first load lock chamber 9, a second load lock chamber 11, and a wafer 12 transferred from the first FOUP 6 and the second FOUP 7. A first buffer unit 13 and a second buffer unit 14 respectively held in the chamber 11 are provided.

  The first buffer unit 13 and the second buffer unit 14 include a first boat 15 and a second boat 16 and a first index assembly 17 and a second index assembly 18 below the first boat 15 and the second boat 16, respectively. The second boat 16, the first index assembly 17 and the second index assembly 18 below the second boat 16 are constituted by a θ rotation shaft 19 of the first load lock chamber 9 and a θ rotation shaft 21 of the second load lock chamber 11. Rotate at the same time.

  The transfer module unit 4 includes a transfer chamber 22, and the first load lock chamber 9 and the second load lock chamber 11 are connected to the transfer chamber 22 via a first gate valve 23 and a second gate valve 24. Installed on. The transfer chamber 22 is provided with a vacuum arm robot unit 25 therethrough, and a multi-node arm 26 used as a second transfer unit is provided inside the transfer chamber 22. The arm 26 is extendable and rotatable, and a quartz substrate receiving plate having a structure in which the wafer 12 can be placed on the front surface of the multi-node arm 26 and the front end is divided into two. (Hereinafter referred to as “finger set 27”) are attached in an overlapping manner.

  The process chamber unit 5 includes a first plasma processing unit 28 and a second plasma processing unit 29 used as a processing chamber, and a first plasma generation chamber 31 and a second plasma generation chamber 32 provided on the upper part, The first plasma processing unit 28 and the second plasma processing unit 29 are attached to the transfer chamber 22 via the first gate valve 23 and the second gate valve 24.

  The first plasma processing unit 28 and the second plasma processing unit 29 include a first susceptor table 33 and a second susceptor table 34 on which the wafer 12 is placed, and the first susceptor table 33 and the second susceptor table 34. A first lifter pin 35 and a second lifter pin 36 are provided through each of the first lifter pin 35 and the second lifter pin 36. The first lifter pin 35 and the second lifter pin 36 move up and down in the directions of the Z axis 37 and the Z axis 38, respectively.

  The first plasma generation chamber 31 and the second plasma generation chamber 32 include a first reaction vessel 39 and a second reaction vessel (not shown), respectively, and are provided outside the first reaction vessel 39 and the second reaction vessel. Are provided with a first high-frequency coil 42 and a second high-frequency coil (not shown). Further, by applying high frequency power to the first high frequency coil 42 and the second high frequency coil, a reactive gas for ashing treatment introduced from a first gas inlet 44 and a second gas inlet (not shown). And plasma is used to ash (plasma process) the resist on the wafer 12 placed on the first susceptor table 33 and the second susceptor table 34.

  Next, referring to FIG. 3, the details of the first plasma processing unit 28 will be described. The second plasma processing unit 29 has the same configuration as that of the first plasma processing unit 28, and therefore the description thereof is omitted.

  The first plasma processing unit 28 is a high-frequency electrodeless discharge type plasma processing unit that performs ashing, which is a dry process, on a semiconductor substrate or a semiconductor element. The first plasma generation unit 31, the wafer 12 such as a semiconductor substrate, etc. A first process chamber 46 to be accommodated, a high-frequency power supply 47 for supplying high-frequency power to the first plasma generation chamber 31, particularly the first high-frequency coil 42, and a frequency matching unit 48 for controlling a transmission frequency of the high-frequency power supply 47 are provided. Yes. An RF sensor 53 is grounded on the output side of the high frequency power supply 47 to monitor traveling waves, reflected waves and the like. The reflected power monitored by the RF sensor 53 is input to the frequency matching unit 48, and the frequency matching unit 48 controls the frequency so that the reflected wave is minimized.

  The first plasma generation chamber 31 is configured to be depressurized and supplied with a plasma reaction gas, and the first high-frequency wave wound around the first reaction vessel 39 and the outer periphery of the first reaction vessel 39. The coil 42 includes an outer shield 49 disposed on the outer periphery of the first high-frequency coil 42 and electrically grounded.

  The first reaction vessel 39 is usually arranged so that its axis is vertical, and the upper and lower ends are hermetically sealed by the top plate 51 and the first process chamber 46. A gas supply pipe 52 extended from a gas supply unit (not shown) to the top plate 51 above the first reaction vessel 39 and for supplying a required plasma reaction gas is provided in the first gas inlet 44. Is attached. The gas supply unit has a function of controlling the gas flow rate, and specifically includes a mass flow controller 54 and a gas supply valve 55 which are flow rate control units.

  A plurality of, for example, four susceptors 57 supported by four columns 56 are provided on the bottom surface of the first process chamber 46 below the first reaction vessel 39, and the susceptor 57 includes the first susceptor table. 33 and a substrate heating unit 58 for heating the wafer 12 on the susceptor 57.

  An exhaust plate 59 is disposed below the susceptor 57, and a baffle ring 61 is provided between the susceptor 57 and the exhaust plate 59. The baffle ring 61, the susceptor 57 and the exhaust plate 59 form a first exhaust chamber 62. The baffle ring 61 has a cylindrical shape, and a large number of vent holes are provided on the outer periphery at regular intervals. Therefore, the first exhaust chamber 62 is partitioned from the first process chamber 46 and communicates with the first process chamber 46 through a vent.

  The exhaust plate 59 is provided with an exhaust communication hole 63, and the first exhaust chamber 62 and the second exhaust chamber 64 communicate with each other through the exhaust communication hole 63. Further, an exhaust pipe 65 is communicated with the second exhaust chamber 64, and an exhaust device 66 is provided in the exhaust pipe 65.

  The pressure in the first process chamber 46 is adjusted by adjusting the gas supply amount and the exhaust amount by the flow rate controller and the exhaust device 66.

  In the asher apparatus 1 configured as described above, the wafer 12 is transferred from the first FOUP 6 and the second FOUP 7 to the first load lock chamber 9 and the second load lock chamber 11. At this time, first, as shown in FIG. 2, the atmospheric robot 8 inserts the tweezers 10 into the pods of the first FOUP 6 and the second FOUP 7 and places the five wafers 12 on the tweezers 10. At this time, the tweezer 10 and the arm part of the atmospheric robot 8 are moved up and down in accordance with the height direction position of the wafer 12 to be taken out.

  After the wafer 12 is placed on the tweezer 10, the atmospheric robot 8 rotates around the θ rotation shaft 67, and the first buffer unit 13 and the second buffer unit 14 move together by traversing and advancing and retreating. The wafers 12 are mounted on the first boat 15 and the second boat 16. At this time, the first boat 15 and the second boat 16 operate in the direction of the Z-axis 68 of the first load lock chamber 9 and the Z-axis 69 of the second load lock chamber 11, and the first boat 15, The second boat 16 receives 25 wafers 12 from the atmospheric robot 8. After receiving the 25 wafers 12, the first boat 15, the wafer 12 in the lowermost layer of the first boat 15 and the second boat 16 are aligned with the height position of the transfer module unit 4, The second boat 16 is moved in the Z-axis 68 and Z-axis 69 directions.

  The wafer 12 held by the first buffer unit 13 and the second buffer unit 14 is received and mounted on the finger set 27 as the double-node arm 26 rotates and expands and contracts. The multi-node arm 26 is rotated in the direction of the θ rotation axis 71 of the transfer module unit 4, and the multi-node arm 26 is further extended in the direction of the Y-axis 72 of the transfer module unit 4, and the first susceptor table 33, It is transferred onto the second susceptor table 34.

  Here, a process of transferring the wafer 12 from the finger set 27 to the first susceptor table 33 and the second susceptor table 34 will be described.

  The wafer 12 is transferred onto the first susceptor table 33 and the second susceptor table 34 in cooperation with the finger set 27, the first lifter pins 35, and the second lifter pins 36. Further, the wafer 12 that has been processed by the reverse operation is transferred from the first susceptor table 33 and the second susceptor table 34 to the first load lock chamber 9 by the finger set 27 via the double-node arm 26. Then, the wafer 12 is transferred to the first buffer unit 13 and the second buffer unit 14 in the second load lock chamber 11.

  In the asher apparatus 1 configured as described above, the wafer 12 is transferred to the first load lock chamber 9 and the second load lock chamber 11, and the first load lock chamber 9 and the second load lock chamber 11 are transferred. The inside is evacuated (vacuum replacement), and the wafer 12 is transferred from the first load lock chamber 9 and the second load lock chamber 11 through the transfer chamber 22 to the first plasma processing unit 28 and the second plasma processing. The resist is removed from the wafer 12 by the first plasma processing unit 28 and the second plasma processing unit 29 (removal process), and the wafer 12 from which the resist has been removed is transferred to the transfer chamber. 22 again through the first load lock chamber 9 and the second load lock chamber It is conveyed to the 1.

  Next, a wafer detection apparatus according to the present invention will be described with reference to FIGS.

  In the figure, reference numeral 73 denotes an airtight container 73 for housing the multi-node arm 26. The hermetic container 73 has a hollow structure and is open upward. The upper end of the hermetic container 73 is covered with a ring-shaped lid 74, and the upper portion of the lid 74 is closed by an upper transparent resin plate 75 that transmits light. Has been. A wafer transfer hole 76 communicating with the first load lock chamber 9 and the second load lock chamber 11 is formed in the wall surface of the hermetic container 73, and an openable / closable gate valve 78 opens the wafer transfer hole 76. It is provided so that it can be closed. Further, a wafer transfer hole 76 ′ communicating with the first plasma processing unit 28 and the second plasma processing unit 29 is formed in the wall surface of the hermetic vessel 73 at a position facing the wafer transfer hole 76 to open and close it. A flexible gate valve 78 'is provided so as to close the wafer transfer hole 76'. A lower laser transmission hole 77 is formed at the bottom of the hermetic container 73, and the lower laser transmission hole 77 is closed by a lower transparent resin plate 79 that transmits light.

  In the transfer module unit 4 in which the wafer 12 is detected, the airtight container 73 is closed by the lid 74, the upper transparent resin plate 75, the gate valves 78 and 78 ', and the lower transparent resin plate 79, thereby carrying the transfer. A chamber 22 is defined.

  The vacuum arm robot unit 25 is provided in the lower part of the transfer chamber 22 so as to pass through the hermetic container 73, and the double-arm 26 is configured as a second transfer unit inside the transfer chamber 22. The double-node arm 26 has a structure that can be expanded and contracted and rotated, and the finger set 27 is attached to the tip of the double-node arm 26. The finger set 27 has a state in which an upper finger 81 and a lower finger 82 having substantially the same shape overlap each other. Both the upper finger 81 and the lower finger 82 have a structure in which the tip is divided into two. In addition, on the surface of the upper finger 81 and the lower finger 82, a seat 83 for aligning the wafer 12 is provided, and the wafer 12 can be placed on the seat 83. .

  Further, the lower laser transmitting hole 77 is formed at a position that can be opposed to the tip of the lower finger 82 that moves through the multi-node arm 26.

  An upper laser transmission hole 84 is formed at two base portions of the upper finger 81 so as to straddle the buckle 83, and the upper laser transmission hole 84 faces the surface of the lower finger 82. Further, an upper displacement sensor 85 is disposed above the upper transparent resin plate 75 at a position facing the finger set 27. The upper displacement sensor 85 emits an upper detection laser beam 86, and the upper detection laser beam 86 passes through the upper laser transmission hole 84 a outside the seat 83 and is reflected by the surface of the base portion of the lower finger 82. The reflected upper detection laser beam 86 is disposed so as to be received by the upper displacement sensor 85 through the upper laser transmission hole 84b of the seat 83.

  One of the upper detection laser beam 86 emitted from the upper displacement sensor 85 and the upper detection laser beam 86 reflected by the surface of the base portion of the lower finger 82 passes through the upper laser transmission hole 84a, and the other is. The upper detection laser beam 86 emitted from the upper displacement sensor 85 passes through the upper laser transmission hole 84b and is reflected by the surface of the base portion of the lower finger 82 because it only needs to pass through the upper laser transmission hole 84b. The upper displacement sensor 85 may be disposed so that the detection laser beam 86 passes through the upper laser transmission hole 84a.

  Further, in the present invention, the upper detection laser beam 86 is reflected by the root portion of the lower finger 82, but the reflection position of the upper detection laser beam 86 is from the mounting position of the wafer 12 on the lower finger 82. Therefore, the reflection position may be changed to the tip of the lower finger 82 or the like according to the positional relationship between the upper laser transmission hole 84 and the upper displacement sensor 85.

  Further, a notch 87 is provided at the outer end of the tip of the lower finger 82, and the notch 87 faces the back surface of the upper finger 81. A lower displacement sensor 88 is disposed below the lower laser transmission hole 77 and at a position facing the lower laser transmission hole 77. In the lower displacement sensor 88, the emitted lower detection laser beam 89 passes through the lower laser transmission hole 77, passes through the notch 87a outside the seat rod 83, and is reflected by the back surface of the upper finger 81. The reflected lower detection laser beam 89 is arranged so as to be received by the lower displacement sensor 88 through the lower laser transmission hole 77 through the notch 87b of the seat 83.

  One of the lower detection laser beam 89 emitted from the lower displacement sensor 88 and the lower detection laser beam 89 reflected by the back surface of the upper finger 81 passes through the mounting position of the wafer 12 on the lower finger 82. The lower finger 82 only needs to pass outside the place where the wafer 12 is placed, so that the lower detection laser beam 89 emitted from the lower displacement sensor 88 passes through the notch 87b and passes through the upper finger 81. The lower displacement sensor 88 may be disposed so that the lower detection laser beam 89 reflected by the back surface of the lower detection laser beam 89 passes through the notch 87a.

  In addition, the lower finger 82 is not provided with the notch 87, and one of the lower detection laser beam 89 emitted by the lower displacement sensor 88 and the lower detection laser beam 89 reflected by the back surface of the upper finger 81 is The lower displacement sensor 88 is disposed so that the lower finger 82 receives light by the lower displacement sensor 88 outside the lower finger 82 and does not pass through the placement location of the wafer 12 and the other passes through the placement location of the wafer 12. Also good.

  The upper displacement sensor 85 and the lower displacement sensor 88 described above have a function of measuring the received light amount of the reflected laser beam. The distance between the displacement sensor and the reflection position can be measured by comparing the measured amount of received light with the amount of received light previously set in the storage unit in the controller 20.

  Further, when the measured amount of received light is compared with the amount of received light set in advance in the storage unit in the controller 20, if there is a large deviation, the laser beam reflected by the displacement sensor may be received. It can be determined that the wafer 12 exists.

  Next, a case where the wafer 12 is actually detected will be described.

  The finger set 27 is moved, and the finger set 27 (wafer 12) is moved to a position where the wafer 12 can be detected by the upper displacement sensor 85 and the lower displacement sensor 88 provided.

  In the case of the upper displacement sensor 85, the emitted upper detection laser beam 86 passes through the upper laser transmission hole 84a, is reflected by the surface of the lower finger 82, and takes a path through the upper laser transmission hole 84b. If the wafer 12 is not placed on the upper finger 81, the upper detection laser beam 85 is received by the upper displacement sensor 85.

  If the wafer 12 is placed on the seat 83 of the upper finger 81, the upper detection laser beam 86 reflected by the surface of the lower finger 82 is blocked by the wafer 12, so that the upper detection laser is used. The light beam 86 is not received by the upper displacement sensor 85.

  Similarly, in the case of the lower displacement sensor 88, the emitted lower detection laser beam 89 passes through the lower laser transmission hole 77 and the notch 87a, is reflected on the back surface of the upper finger 81, and reflects the lower detection. Since the laser beam 89 takes a path passing through the notch 87 b and the lower laser transmission hole 77, the lower detection laser beam 89 is used as the lower displacement sensor 88 unless the wafer 12 is placed on the lower finger 82. Is received.

  If the wafer 12 is placed on the seat 83 of the lower finger 82, the lower detection laser beam 89 reflected by the back surface of the upper finger 81 is blocked by the wafer 12. The light beam 89 is not received by the lower displacement sensor 88.

  As described above, if both the upper displacement sensor 85 and the lower displacement sensor 88 can receive the detection laser beam emitted and reflected, it can be determined that the wafer 12 is not placed, and the detection laser beam must not be received. For example, it can be determined that the wafer 12 is placed.

  The detection laser beam emitted from the displacement sensor is not reflected and detected on the wafer 12, but the detection laser beam is reflected on the finger to detect the pattern wafer in the case of the wafer 12. This is because the isosurface state has a large number of patterns, and the reference changes and cannot be detected well.

  As described above, the upper displacement sensor 85 can detect the presence / absence of the wafer 12 placed on the upper finger 81 regardless of the presence / absence of the wafer 12 placed on the lower finger 82, and the lower displacement sensor. No. 88 can detect the presence or absence of the wafer 12 placed on the lower finger 82 regardless of the presence or absence of the wafer 12 placed on the upper finger 81, so that the wafer 12 can be accurately detected.

  Further, in the present invention, since a reflection type detector (displacement sensor) is used, a laser beam reflected despite the presence of the wafer 12 due to a positional deviation of the finger, a sagging of the finger, etc. Even if the light is received, the amount of the reflected laser beam is detected and compared with the amount of light received in advance stored in the storage unit in the controller 20, thereby obtaining the distance between the displacement sensor and the reflection position. Can be measured.

  With the configuration as described above, it is possible to prevent erroneous detection due to the positional deviation of the fingers, the drooping of the fingers, or the like.

  Each configuration described above is controlled by the controller 20.

  The upper displacement sensor 85 and the lower displacement sensor 88 need only be able to detect the wafer 12 in the transfer path, and the upper displacement sensor 85 and the lower displacement sensor 88 need not be provided at the same position.

  In the embodiment of the present invention, the upper transparent resin plate 75 that transmits light is blocked by the upper portion of the lid 74 of the hermetic container 73, but the portion that transmits light is the upper displacement sensor 85. However, since the upper detection laser beam 86 needs only to be large enough to emit and receive light, the lid 74 is made of a more airtight material, and only the portion through which the upper detection laser beam 86 passes is transparent. It is good also as a structure used as a member.

(Appendix)
The present invention includes the following embodiments.

  (Appendix 1) In a substrate processing apparatus having a substrate transfer module unit for transferring a substrate using two upper and lower substrate receiving plates, an upper reflection type optical substrate detector at a position facing the upper receiving plate And a lower reflective optical substrate detector at a position that can face the lower receiving plate, the upper reflective optical substrate detector emits light, and the light reflected by the lower receiving plate is The presence or absence of the substrate is detected based on whether the upper reflection type optical substrate detector receives light, the lower reflection type optical substrate detector emits light, and the light reflected by the upper receiving plate is converted into the lower reflection type light. A substrate processing apparatus for detecting the presence or absence of a substrate based on whether or not the substrate detector receives light.

  (Supplementary note 2) The substrate processing apparatus according to supplementary note 1, wherein a substrate mounting seat is provided on a surface of the upper receiving plate and the lower receiving plate.

  (Supplementary note 3) The substrate processing apparatus according to supplementary note 2, wherein a hole is formed in a base of the upper receiving plate, and the hole has a shape straddling the buckle.

  (Supplementary note 4) The substrate processing apparatus according to supplementary note 3, wherein the hole is positioned to face the lower receiving plate.

  (Additional remark 5) The displacement sensor is arrange | positioned in the position which can oppose the surface of the said upper receiving plate, and the laser beam inject | emitted from the said displacement sensor and reflected by the said lower receiving plate passes the said hole. Substrate processing equipment.

  (Supplementary note 6) The substrate processing apparatus according to supplementary note 1, wherein at least one notch is provided at an outer end of a tip of the lower receiving plate.

  (Additional remark 7) The said notch is a substrate processing apparatus of additional remark 6 in the position which opposes the front-end | tip of the said upper receiving plate.

  (Supplementary Note 8) A displacement sensor is disposed at a position facing the back surface of the lower receiving plate, and a laser beam emitted from the displacement sensor and reflected by the upper receiving plate passes through the notch. Substrate processing equipment.

  (Supplementary note 9) The substrate processing apparatus according to supplementary note 7, wherein a tip of the lower receiving plate is bifurcated and line symmetric, and the notch is line symmetrical.

  (Supplementary Note 10) In a substrate processing apparatus having a substrate transfer module unit for transferring a substrate using two upper and lower substrate receiving plates, an upper reflection type optical substrate detector at a position that can face the upper receiving plate And a lower reflective optical substrate detector at a position that can face the lower receiving plate, the upper reflective optical substrate detector emits light, and the light reflected by the lower receiving plate is Detects the presence or absence of a substrate based on whether the upper reflective optical substrate detector receives light or whether the distance measured from the amount of light received by the upper reflective optical substrate detector deviates significantly from the set value. Whether the lower reflective optical substrate detector emits light and the lower reflective optical substrate detector receives the light reflected by the upper receiving plate, or the lower reflective optical substrate detector. Whether the distance measured from the amount of received light does not deviate significantly from the set value. In the substrate processing apparatus characterized by detecting the presence or absence of the substrate.

It is a schematic cross-sectional view showing the asher device in the present invention. It is a schematic longitudinal cross-sectional view which shows the asher apparatus in this invention. It is a schematic longitudinal cross-sectional view which shows the plasma processing unit of the asher apparatus in this invention. It is a schematic longitudinal cross-sectional view of the conveyance chamber which shows embodiment of this invention. It is a principal part enlarged view which shows embodiment of this invention. It is a principal part enlarged view which shows embodiment of this invention. It is a principal part enlarged view which shows embodiment of this invention.

Explanation of symbols

1 Asher device 2 EFEM
DESCRIPTION OF SYMBOLS 3 Load lock chamber part 4 Transfer module part 5 Process chamber part 12 Wafer 20 Controller 22 Transfer chamber 25 Vacuum arm robot unit 26 Double joint arm 27 Finger assembly 75 Upper transparent resin plate 77 Lower laser transmission hole 79 Lower transparent resin plate 81 Upper finger 82 Lower finger 83 Cushion 84 Upper laser transmission hole 85 Upper displacement sensor 86 Upper detection laser beam 87 Notch 88 Lower displacement sensor 89 Lower detection laser beam

Claims (1)

  In a substrate processing apparatus comprising a substrate transport module that transports a substrate using two upper and lower substrate receiving plates, an upper reflective optical substrate detector is provided at a position that can face the upper receiving plate, A lower reflective optical substrate detector is provided at a position facing the lower receiving plate, the upper reflective optical substrate detector emits light, and the light reflected by the lower receiving plate is converted into the upper reflective light. The presence or absence of the substrate is detected by whether the substrate detector receives light, the lower reflective optical substrate detector emits light, and the lower reflective optical substrate detector reflects the light reflected by the upper receiving plate. A substrate processing apparatus for detecting the presence or absence of a substrate based on whether light is received or not.

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