JP2010093252A - リソグラフィ装置およびデバイス製造方法 - Google Patents
リソグラフィ装置およびデバイス製造方法 Download PDFInfo
- Publication number
- JP2010093252A JP2010093252A JP2009225775A JP2009225775A JP2010093252A JP 2010093252 A JP2010093252 A JP 2010093252A JP 2009225775 A JP2009225775 A JP 2009225775A JP 2009225775 A JP2009225775 A JP 2009225775A JP 2010093252 A JP2010093252 A JP 2010093252A
- Authority
- JP
- Japan
- Prior art keywords
- mirror block
- substrate
- bar
- substrate table
- clamping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title description 5
- 239000000758 substrate Substances 0.000 claims abstract description 115
- 238000000059 patterning Methods 0.000 claims abstract description 46
- 230000005855 radiation Effects 0.000 claims abstract description 45
- 238000005286 illumination Methods 0.000 claims abstract description 6
- 239000000463 material Substances 0.000 claims description 6
- 230000002829 reductive effect Effects 0.000 description 14
- 230000003287 optical effect Effects 0.000 description 9
- 230000001133 acceleration Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- 238000009826 distribution Methods 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004590 computer program Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000005670 electromagnetic radiation Effects 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000006094 Zerodur Substances 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229910052878 cordierite Inorganic materials 0.000 description 1
- 238000013500 data storage Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- 230000000670 limiting effect Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 210000001747 pupil Anatomy 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70716—Stages
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70833—Mounting of optical systems, e.g. mounting of illumination system, projection system or stage systems on base-plate or ground
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
【解決手段】リソグラフィ装置は、放射ビームBを調整するように構成された照明システムILと、この放射ビームBの断面にパターンを付与してパターン付き放射ビームを形成することができるパターニングデバイスMAを支持するように構築されたサポートMTと、基板Wを保持するように構築された基板テーブルWTを備えるミラーブロックMBと、基板Wのターゲット部分の上にパターン付き放射ビームを投影するように構成された投影システムPSとを含み、ミラーブロックMBは、ミラーブロックMBと基板テーブルWTの間のすべりを低減させるように構築され配置される。
【選択図】図1
Description
Claims (16)
- 放射ビームを調整するように構成された照明システムと、
前記放射ビームの断面にパターンを付与してパターン付き放射ビームを形成することができるパターニングデバイスを支持するように構築されたサポートと、
基板を保持するように構築された基板テーブルを備えるミラーブロックと、
前記基板のターゲット部分の上に前記パターン付き放射ビームを投影するように構成された投影システムとを備え、
前記ミラーブロックが、前記ミラーブロックと前記基板テーブルの間のすべりを低減させるように構築され配置される、リソグラフィ装置。 - スロットが前記ミラーブロック内に設けられる、請求項1に記載の装置。
- 前記スロットが前記ミラーブロックの、前記基板テーブルをクランプするためのクランプ領域と、前記ミラーブロックにアクチュエータを接続するためのアクチュエータ領域との間に設けられる、請求項2に記載の装置。
- 前記スロットが、前記クランプ領域に対しほぼ垂直の方向に設けられる、請求項2に記載の装置。
- 前記スロットが、前記クランプ領域とほぼ平行の方向に設けられる、請求項2に記載の装置。
- 前記ミラーブロックが、約100GPaよりも高いヤング率を有する材料を含む、請求項1に記載の装置。
- バールが、前記ミラーブロックと前記基板テーブルの間で、前記ミラーブロック上の前記基板テーブルをクランプするためのクランプ領域の上に設けられる、請求項1に記載の装置。
- 前記クランプ領域が、前記基板テーブルのサイズよりも小さい、請求項7に記載の装置。
- 前記バールが0.15mmよりも長い、請求項7に記載の装置。
- 前記バールが2mmよりも長い、請求項9に記載の装置。
- 前記バールが、最小接続領域よりも大きい接触面を有する、請求項7に記載の装置。
- バールが、前記ミラーブロックを位置決めするように構成されたアクチュエータが前記ミラーブロックに接続されるアクチュエータ領域に近い領域内の前記クランプ領域上に存在しない、請求項7に記載の装置。
- 前記バールが可撓バールおよび追加バールを含み、前記可撓バールが、前記追加バールと比べて高い可撓性を有し、前記可撓バールが、前記ミラーブロックを位置決めするように構成されたアクチュエータが前記ミラーブロックに接続されるアクチュエータ領域に近い領域内に存在し、前記追加バールが、前記クランプ領域の残りの部分に存在する、請求項7に記載の装置。
- 前記バールが荒い接触面を備える、請求項7に記載の装置。
- 前記クランプ領域の中心に設けられたバールが、前記クランプ領域の縁部に設けられたバールよりも高い剛性を有する、請求項7から14の一項に記載の装置。
- 前記ミラーブロックと前記基板テーブルが、コネクタ素子および/または剛性リブによって水平面内で相対的に高い剛性を備えて結合される、請求項7から15の一項に記載の装置。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10339608P | 2008-10-07 | 2008-10-07 | |
US61/103,396 | 2008-10-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010093252A true JP2010093252A (ja) | 2010-04-22 |
JP5061170B2 JP5061170B2 (ja) | 2012-10-31 |
Family
ID=42075558
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009225775A Active JP5061170B2 (ja) | 2008-10-07 | 2009-09-30 | リソグラフィ装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US8269949B2 (ja) |
JP (1) | JP5061170B2 (ja) |
KR (1) | KR101164983B1 (ja) |
CN (1) | CN101713929B (ja) |
NL (1) | NL2003470A (ja) |
TW (1) | TWI424288B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013135216A (ja) * | 2011-12-22 | 2013-07-08 | Asml Netherlands Bv | ステージシステムおよびリソグラフィ装置 |
JP2019135791A (ja) * | 2010-08-05 | 2019-08-15 | エーエスエムエル ネザーランズ ビー.ブイ. | インプリントリソグラフィ |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9366973B2 (en) | 2011-02-18 | 2016-06-14 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
CN107367907B (zh) | 2012-05-29 | 2019-05-03 | Asml荷兰有限公司 | 支撑装置、光刻装置和器件制造方法 |
WO2014044496A2 (en) * | 2012-09-19 | 2014-03-27 | Asml Netherlands B.V. | Method of calibrating a reluctance actuator assembly, reluctance actuator and lithographic apparatus comprising such reluctance actuator |
NL2014799A (en) * | 2014-06-12 | 2016-03-31 | Asml Netherlands Bv | Lithographic Apparatus and Exposure Method. |
DE102014212710A1 (de) * | 2014-07-01 | 2016-01-07 | Carl Zeiss Smt Gmbh | Optischer Manipulator, Projektionsobjektiv und Projektionsbelichtungsanlage |
NL2017542A (en) | 2015-10-29 | 2017-05-19 | Asml Netherlands Bv | Lithographic apparatus substrate table and method of loading a substrate |
USD824664S1 (en) | 2017-02-22 | 2018-08-07 | Yeti Coolers, Llc | Bag |
USD824675S1 (en) | 2017-02-22 | 2018-08-07 | Yeti Coolers, Llc | Bag |
USD825184S1 (en) | 2017-02-22 | 2018-08-14 | Yeti Coolers, Llc | Bag |
US11076666B2 (en) | 2017-03-08 | 2021-08-03 | Yeti Coolers, Llc | Container with magnetic closure |
CN110381771B (zh) | 2017-03-08 | 2022-06-24 | 野醍冷却器有限责任公司 | 具有磁性闭合件的容器 |
US10954055B2 (en) | 2017-03-08 | 2021-03-23 | Yeti Coolers, Llc | Container with magnetic closure |
USD909063S1 (en) | 2019-03-08 | 2021-02-02 | Yeti Coolers, Llc | Bag |
USD935175S1 (en) | 2019-03-08 | 2021-11-09 | Yeti Coolers, Llc | Bag |
USD957200S1 (en) | 2020-06-03 | 2022-07-12 | Yeti Coolers, Llc | Bag |
US11992104B2 (en) | 2022-02-16 | 2024-05-28 | Yeti Coolers, Llc | Container with resealable closure |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07125838A (ja) * | 1993-06-15 | 1995-05-16 | Nikon Corp | 位置決めテーブル装置 |
JP2003324053A (ja) * | 2002-04-30 | 2003-11-14 | Nikon Corp | ステージ装置および露光装置 |
JP2003332411A (ja) * | 2002-05-17 | 2003-11-21 | Nikon Corp | 基板保持装置及び露光装置 |
JP2007305989A (ja) * | 2006-05-05 | 2007-11-22 | Asml Netherlands Bv | リソグラフィ装置および方法 |
JP2007311787A (ja) * | 2006-05-15 | 2007-11-29 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6172738B1 (en) * | 1996-09-24 | 2001-01-09 | Canon Kabushiki Kaisha | Scanning exposure apparatus and device manufacturing method using the same |
US6320736B1 (en) * | 1999-05-17 | 2001-11-20 | Applied Materials, Inc. | Chuck having pressurized zones of heat transfer gas |
CN100568101C (zh) * | 2002-11-12 | 2009-12-09 | Asml荷兰有限公司 | 光刻装置和器件制造方法 |
JP2004165439A (ja) * | 2002-11-13 | 2004-06-10 | Canon Inc | ステージ装置 |
EP1500980A1 (en) * | 2003-07-22 | 2005-01-26 | ASML Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
US7119884B2 (en) * | 2003-12-24 | 2006-10-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
US8749762B2 (en) * | 2004-05-11 | 2014-06-10 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006118889A (ja) * | 2004-10-19 | 2006-05-11 | Sanyo Electric Co Ltd | 位置検出システム、位置検出システムの位置検出方法、位置検出通信装置、通信装置 |
US7532310B2 (en) | 2004-10-22 | 2009-05-12 | Asml Netherlands B.V. | Apparatus, method for supporting and/or thermally conditioning a substrate, a support table, and a chuck |
US8760621B2 (en) * | 2007-03-12 | 2014-06-24 | Asml Netherlands B.V. | Lithographic apparatus and method |
US8446566B2 (en) * | 2007-09-04 | 2013-05-21 | Asml Netherlands B.V. | Method of loading a substrate on a substrate table and lithographic apparatus and device manufacturing method |
-
2009
- 2009-09-11 NL NL2003470A patent/NL2003470A/en not_active Application Discontinuation
- 2009-09-21 US US12/563,838 patent/US8269949B2/en active Active
- 2009-09-27 CN CN200910178543.1A patent/CN101713929B/zh active Active
- 2009-09-29 TW TW098133006A patent/TWI424288B/zh active
- 2009-09-30 JP JP2009225775A patent/JP5061170B2/ja active Active
- 2009-10-06 KR KR1020090094640A patent/KR101164983B1/ko active IP Right Grant
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07125838A (ja) * | 1993-06-15 | 1995-05-16 | Nikon Corp | 位置決めテーブル装置 |
JP2003324053A (ja) * | 2002-04-30 | 2003-11-14 | Nikon Corp | ステージ装置および露光装置 |
JP2003332411A (ja) * | 2002-05-17 | 2003-11-21 | Nikon Corp | 基板保持装置及び露光装置 |
JP2007305989A (ja) * | 2006-05-05 | 2007-11-22 | Asml Netherlands Bv | リソグラフィ装置および方法 |
JP2007311787A (ja) * | 2006-05-15 | 2007-11-29 | Asml Netherlands Bv | リソグラフィ装置およびデバイス製造方法 |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019135791A (ja) * | 2010-08-05 | 2019-08-15 | エーエスエムエル ネザーランズ ビー.ブイ. | インプリントリソグラフィ |
US10890851B2 (en) | 2010-08-05 | 2021-01-12 | Asml Netherlands B.V. | Imprint lithography |
US10908510B2 (en) | 2010-08-05 | 2021-02-02 | Asml Netherlands B.V. | Imprint lithography |
US11635696B2 (en) | 2010-08-05 | 2023-04-25 | Asml Netherlands B.V. | Imprint lithography |
JP2013135216A (ja) * | 2011-12-22 | 2013-07-08 | Asml Netherlands Bv | ステージシステムおよびリソグラフィ装置 |
US9389518B2 (en) | 2011-12-22 | 2016-07-12 | Asml Netherlands B.V. | Stage system and a lithographic apparatus |
Also Published As
Publication number | Publication date |
---|---|
TWI424288B (zh) | 2014-01-21 |
CN101713929A (zh) | 2010-05-26 |
TW201015250A (en) | 2010-04-16 |
KR101164983B1 (ko) | 2012-07-12 |
JP5061170B2 (ja) | 2012-10-31 |
US8269949B2 (en) | 2012-09-18 |
CN101713929B (zh) | 2013-05-15 |
US20100085551A1 (en) | 2010-04-08 |
NL2003470A (en) | 2010-04-08 |
KR20100039256A (ko) | 2010-04-15 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5061170B2 (ja) | リソグラフィ装置 | |
JP2010531541A (ja) | 基板を基板テーブル上にロードする方法、デバイス製造方法、コンピュータプログラム、データキャリア、および装置 | |
JP2009260339A (ja) | 位置決めシステム、リソグラフィ装置、およびデバイス製造方法 | |
JP2006054460A (ja) | 位置合せマークを提供する方法、基板を位置合せする方法、デバイス製造方法、コンピュータ・プログラム及びデバイス | |
JP7378453B2 (ja) | リソグラフィ装置用基板テーブル、および基板の装填方法 | |
JP2007258707A (ja) | リソグラフィ装置および二重露光オーバレイ制御を用いたデバイス製造方法 | |
JP4896209B2 (ja) | 交換ブリッジを備えるリソグラフィ装置 | |
JP2011520245A (ja) | リソグラフィ装置のための剪断層チャック | |
US8947640B2 (en) | Positioning device, lithographic apparatus, positioning method and device manufacturing method | |
US8773641B2 (en) | Leaf spring, stage system, and lithographic apparatus | |
KR100945566B1 (ko) | 리소그래피 장치 및 디바이스 제조 방법 | |
JP2009267406A (ja) | リソグラフィ装置およびデバイス製造方法 | |
JP4719710B2 (ja) | リソグラフィ装置およびデバイス製造方法 | |
JP4932862B2 (ja) | 制振層を備えるチャックを有するリソグラフィ装置 | |
JP5989233B2 (ja) | リソグラフィ装置およびデバイス製造方法 | |
US9041913B2 (en) | Lithographic apparatus and device manufacturing method with bearing to allow substrate holder to float with respect to substrate table | |
JP2010103531A (ja) | リソグラフィ装置及びデバイス製造方法 | |
JP4977174B2 (ja) | オブジェクトサポート位置決めデバイスおよびリソグラフィ装置 | |
JP4972126B2 (ja) | リソグラフィ装置、複合材料、可動コンポーネント及び製造方法 | |
JP2007251133A (ja) | リソグラフィ装置およびデバイス製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20111031 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20111102 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20120126 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20120131 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120419 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120709 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120806 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150810 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5061170 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |