JP2010064220A5 - - Google Patents

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JP2010064220A5
JP2010064220A5 JP2008234991A JP2008234991A JP2010064220A5 JP 2010064220 A5 JP2010064220 A5 JP 2010064220A5 JP 2008234991 A JP2008234991 A JP 2008234991A JP 2008234991 A JP2008234991 A JP 2008234991A JP 2010064220 A5 JP2010064220 A5 JP 2010064220A5
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polishing
substrate
target
amplitude
polishing apparatus
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JP5301931B2 (en
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Claims (31)

基板を基板保持部により保持し、
研磨テーブルに取り付けられた研磨パッドの研磨面に基板を押圧し、
前記基板保持部と前記研磨テーブルとを相対移動させて前記基板の表面を研磨し、
研磨中に、前記基板の表面に接触するターゲットの振動の振幅および周波数の少なくとも一方を測定し、
測定された前記振幅および周波数の少なくとも一方に基づいて研磨処理を制御することを特徴とする研磨方法。
Hold the substrate by the substrate holder,
Press the substrate against the polishing surface of the polishing pad attached to the polishing table,
Polishing the surface of the substrate by relatively moving the substrate holding unit and the polishing table;
During polishing, measure at least one of amplitude and frequency of vibration of the target that contacts the surface of the substrate;
A polishing method, wherein polishing processing is controlled based on at least one of the measured amplitude and frequency.
前記振幅および周波数の少なくとも一方が増加または減少して所定の値となったときに、研磨終点に達したと判断することを特徴とする請求項に記載の研磨方法。 The polishing method according to claim 1 , wherein it is determined that the polishing end point has been reached when at least one of the amplitude and frequency increases or decreases to a predetermined value. 測定された前記振幅および周波数の少なくとも一方に基づいて、前記基板の複数の領域に対する押圧力を制御することを特徴とする請求項に記載の研磨方法。 It said measured based on at least one of amplitude and frequency, the polishing method according to claim 1, characterized in that to control the pressing force against the plurality of regions of the substrate. 前記ターゲットと前記基板との接触圧力を一定に維持しながら、前記ターゲットの振動の振幅および周波数の少なくとも一方を測定することを特徴とする請求項に記載の研磨方法。 The polishing method according to claim 1, characterized in that the while maintaining the contact pressure of the target and the substrate constant, to measure at least one of the amplitude and frequency of vibration of the target. 研磨中に、前記基板の表面に光を照射し、該基板から戻ってくる反射光の強度を測定することを特徴とする請求項に記載の研磨方法。 During polishing, the polishing method according to claim 1, the light irradiated on the surface of the substrate, and measuring the intensity of the reflected light returned from the substrate. 前記ターゲットが接触する基板の箇所と、前記光を照射する基板の箇所とは同一であることを特徴とする請求項に記載の研磨方法。 The polishing method according to claim 5 , wherein a portion of the substrate that contacts the target is the same as a portion of the substrate that is irradiated with the light. 前記振幅および周波数の少なくとも一方と、前記反射光の強度とを選択的に監視することを特徴とする請求項に記載の研磨方法。 The polishing method according to claim 5 , wherein at least one of the amplitude and frequency and the intensity of the reflected light are selectively monitored. 研磨中に、前記基板の表面の画像を取得し、
前記画像から前記基板の表面の構造を解析することを特徴とする請求項に記載の研磨方法。
During polishing, acquire an image of the surface of the substrate,
The polishing method according to claim 1 , wherein the structure of the surface of the substrate is analyzed from the image.
研磨中に、前記ターゲットの画像を取得し、
前記画像から前記ターゲットの振動の振幅および周波数の少なくとも一方を解析することを特徴とする請求項に記載の研磨方法。
During polishing, acquire an image of the target,
The polishing method according to claim 1 , wherein at least one of an amplitude and a frequency of vibration of the target is analyzed from the image.
研磨面を有する研磨パッドが取り付けられる研磨テーブルと、
基板を前記研磨面に押圧する基板保持部とを有し、前記研磨テーブルと前記基板保持部の相対移動により基板の表面を研磨する研磨装置であって、
前記基板の表面に接触するターゲットと、
前記ターゲットの振動の振幅および周波数の少なくとも一方を測定する振動測定部と、
前記振動測定部によって測定された前記振幅および周波数の少なくとも一方に基づいて研磨処理を制御する制御部とを備えたことを特徴とする研磨装置。
A polishing table to which a polishing pad having a polishing surface is attached;
A polishing apparatus that has a substrate holding part that presses the substrate against the polishing surface, and polishes the surface of the substrate by relative movement of the polishing table and the substrate holding part,
A target in contact with the surface of the substrate;
A vibration measuring unit that measures at least one of amplitude and frequency of vibration of the target;
A polishing apparatus comprising: a control unit that controls polishing processing based on at least one of the amplitude and frequency measured by the vibration measuring unit.
前記制御部は、前記振幅および周波数の少なくとも一方が増加または減少して所定の値となったときに、研磨終点に達したと判断することを特徴とする請求項10に記載の研磨装置。 The polishing apparatus according to claim 10 , wherein the control unit determines that a polishing end point has been reached when at least one of the amplitude and frequency increases or decreases to a predetermined value. 前記基板保持部は、前記基板の複数の領域を独立に押圧する複数の押圧機構を有し、
前記制御部は、前記振動測定部によって測定された前記振幅および周波数の少なくとも一方に基づいて、前記複数の押圧機構の押圧力を制御することを特徴とする請求項10に記載の研磨装置。
The substrate holding part has a plurality of pressing mechanisms that independently press a plurality of regions of the substrate,
The polishing apparatus according to claim 10 , wherein the control unit controls the pressing force of the plurality of pressing mechanisms based on at least one of the amplitude and frequency measured by the vibration measuring unit.
前記ターゲットは、内部に流体が封入された弾性バッグを備えることを特徴とする請求項10に記載の研磨装置。 The polishing apparatus according to claim 10 , wherein the target includes an elastic bag in which a fluid is sealed. 前記振動測定部は、前記弾性バッグの振動の振幅および周波数の少なくとも一方を測定することを特徴とする請求項13に記載の研磨装置。 The polishing apparatus according to claim 13 , wherein the vibration measuring unit measures at least one of an amplitude and a frequency of vibration of the elastic bag. 前記弾性バッグに供給される流体の圧力を調整する圧力調整機構をさらに備えたことを特徴とする請求項13に記載の研磨装置。 The polishing apparatus according to claim 13 , further comprising a pressure adjusting mechanism that adjusts a pressure of a fluid supplied to the elastic bag. 前記振動測定部は、前記弾性バッグに封入された流体の圧力を測定する圧力センサであることを特徴とする請求項13に記載の研磨装置。 The polishing apparatus according to claim 13 , wherein the vibration measuring unit is a pressure sensor that measures a pressure of a fluid sealed in the elastic bag. 前記ターゲットは、前記基板の表面に接触する接触パッドをさらに有しており、
前記接触パッドは、前記弾性バッグに取り付けられており、
前記振動測定部は、前記接触パッドの振動の振幅および周波数の少なくとも一方を測定することを特徴とする請求項13に記載の研磨装置。
The target further includes a contact pad that contacts the surface of the substrate;
The contact pad is attached to the elastic bag;
The polishing apparatus according to claim 13 , wherein the vibration measuring unit measures at least one of an amplitude and a frequency of vibration of the contact pad.
前記弾性バッグは光透過性を有する材料から構成されており、
前記弾性バッグを介して前記基板の表面の画像を取得する画像取得手段をさらに備えていることを特徴とする請求項13に記載の研磨装置。
The elastic bag is made of a light transmissive material,
The polishing apparatus according to claim 13 , further comprising image acquisition means for acquiring an image of the surface of the substrate through the elastic bag.
前記画像取得手段によって取得された画像から前記基板の表面の構造を解析する画像解析部をさらに備えていることを特徴とする請求項18に記載の研磨装置。 The polishing apparatus according to claim 18 , further comprising an image analysis unit that analyzes a structure of a surface of the substrate from an image acquired by the image acquisition unit. 前記ターゲットと前記基板との接触圧力を調整する接触圧力調整機構をさらに備えたことを特徴とする請求項10に記載の研磨装置。 The polishing apparatus according to claim 10 , further comprising a contact pressure adjusting mechanism that adjusts a contact pressure between the target and the substrate. 前記制御部は、前記接触圧力調整機構を介して前記接触圧力を一定に制御することを特徴とする請求項20に記載の研磨装置。 The polishing apparatus according to claim 20 , wherein the control unit controls the contact pressure to be constant through the contact pressure adjusting mechanism. 前記振動測定部は、
前記ターゲットの画像を取得する画像取得手段と、
前記画像取得手段によって取得された画像から前記ターゲットの振動の振幅および周波数の少なくとも一方を解析する画像解析部とを備えていることを特徴とする請求項10に記載の研磨装置。
The vibration measuring unit is
Image acquisition means for acquiring an image of the target;
The polishing apparatus according to claim 10 , further comprising: an image analysis unit that analyzes at least one of an amplitude and a frequency of vibration of the target from an image acquired by the image acquisition unit.
前記振動測定部は、
前記ターゲットに光を照射する投光部と、
前記ターゲットで反射した光を受光する受光部と、
前記受光部によって受光された光の強さを測定する測定部とを有することを特徴とする請求項10に記載の研磨装置。
The vibration measuring unit is
A light projecting unit for irradiating the target with light;
A light receiving unit for receiving light reflected by the target;
The polishing apparatus according to claim 10 , further comprising a measuring unit that measures the intensity of light received by the light receiving unit.
前記研磨テーブルには、その上面で開口する液体室が設けられ、
前記ターゲットは、前記液体室内に配置されていることを特徴とする請求項10に記載の研磨装置。
The polishing table is provided with a liquid chamber that opens on its upper surface,
The polishing apparatus according to claim 10 , wherein the target is disposed in the liquid chamber.
前記ターゲットは、前記研磨パッドの一部であることを特徴とする請求項10に記載の研磨装置。 The polishing apparatus according to claim 10 , wherein the target is a part of the polishing pad. 前記研磨パッドには切れ込み線が形成されており、前記ターゲットは、前記切れ込み線で囲まれた領域であることを特徴とする請求項25に記載の研磨装置。 The polishing apparatus according to claim 25 , wherein a cut line is formed in the polishing pad, and the target is a region surrounded by the cut line. 前記ターゲットを構成する前記研磨パッドの一部は、他の部分よりも厚さが薄い部分であることを特徴とする請求項25に記載の研磨装置。 26. The polishing apparatus according to claim 25 , wherein a part of the polishing pad constituting the target is a part having a smaller thickness than other parts. 前記基板の表面に光を照射し、該基板から戻ってくる反射光の強度を測定する反射強度測定部をさらに備えたことを特徴とする請求項10に記載の研磨装置。 The polishing apparatus according to claim 10 , further comprising a reflection intensity measuring unit that irradiates the surface of the substrate with light and measures the intensity of reflected light returning from the substrate. 前記ターゲットが接触する基板の箇所と、前記反射強度測定部が光を照射する基板の箇所とは同一であることを特徴とする請求項28に記載の研磨装置。 29. The polishing apparatus according to claim 28 , wherein a portion of the substrate that is in contact with the target is the same as a portion of the substrate that is irradiated with light by the reflection intensity measuring unit. 前記制御部は、前記振幅および周波数の少なくとも一方と、前記反射光の強度とを選択的に監視することを特徴とする請求項28に記載の研磨装置。 The polishing apparatus according to claim 28 , wherein the control unit selectively monitors at least one of the amplitude and frequency and the intensity of the reflected light. 前記研磨テーブルの振動の振幅および周波数の少なくとも一方を測定するリファレンス測定部をさらに備え、
前記振動測定部は前記研磨テーブルに設けられ、
前記制御部は、前記振動測定部の測定値から前記リファレンス測定部の測定値を除算することを特徴とする請求項10に記載の研磨装置。
A reference measurement unit for measuring at least one of amplitude and frequency of vibration of the polishing table;
The vibration measuring unit is provided on the polishing table,
The polishing apparatus according to claim 10 , wherein the control unit divides the measurement value of the reference measurement unit from the measurement value of the vibration measurement unit.
JP2008234991A 2008-09-12 2008-09-12 Polishing method and polishing apparatus Expired - Fee Related JP5301931B2 (en)

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