JP2010056301A5 - - Google Patents

Claims (6)

A low noise analog circuit composed of a first buried channel transistor;
An analog circuit other than a low noise circuit composed of a second buried channel type transistor or a first surface channel type transistor;
A digital circuit composed of a second surface channel transistor;
On a semiconductor substrate,
In the first buried channel type transistor, an N-type high-concentration impurity that forms one end of the P-type gate and a source / drain so that the N-type impurity is not implanted into the P-type gate in the N-type MOSFET. A semiconductor integrated circuit in which an offset is provided between one end of a region . 2. The semiconductor integrated circuit according to claim 1, wherein a gate oxide film thickness of a transistor of the analog circuit of the low noise circuit is thinner than a gate oxide film thickness of a transistor of the analog circuit other than the low noise circuit and the digital circuit. The semiconductor integrated circuit according to claim 1, wherein the low noise circuit is an amplifier circuit. 3. The semiconductor integrated circuit according to claim 1, wherein the low noise circuit is an A / D converter . 3. The semiconductor integrated circuit according to claim 1, wherein the low noise circuit is a D / A converter . A first P-channel MOS transistor in which a gate electrode and a source electrode are connected;
A second P-channel MOS transistor having a gate electrode connected to the gate electrode of the first P-channel MOS transistor and a source electrode connected to a source electrode of the first P-channel MOS transistor;
A first N-channel MOS transistor having a drain electrode connected to the drain electrode of the first P-channel MOS transistor and a gate electrode serving as a first input terminal;
The drain electrode is connected to the drain electrode of the second P-channel MOS transistor, the source electrode is connected to the source electrode of the first N-channel MOS transistor, and the gate electrode is used as the second input terminal. A second N-channel MOS transistor;
In an amplifier circuit consisting of
Each MOS transistor constituting the amplifier circuit is a buried channel type, and an end portion of the gate electrode is arranged so that N-type impurities do not enter the gate electrodes of the first and second N-channel MOS transistors. A semiconductor integrated circuit device characterized in that a high concentration impurity region forming a source / drain is offset from each end close to the gate electrode.