JP2010050130A - Device for supporting semiconductor wafer - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device of a simple configuration for supporting a semiconductor wafer, capable of improving workability of loading a wafer to an apparatus by minimizing the warpage of the outer circumferential edge of the wafer even if the wafer has a large diameter, and preventing the wafer from being damaged due to contact and contaminated by reducing a contact area with the wafer. <P>SOLUTION: The device 20 for supporting a wafer linearly contacts a backside 10a of a wafer 10 having a diameter of 450 mm and a thickness of ≥825 μm from the lower part to support the wafer 10. The supporting device 20 is circularly formed and arranged concentrically with the wafer 10 within a range of 0.8-0.98 times a diameter r of the wafer 10 from a center C of the wafer 10. The supporting device 20 is formed so that a cross sectional shape is a right triangle. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a support for a semiconductor wafer (hereinafter also simply referred to as “wafer”).

  Conventionally, in the manufacturing process of a wafer, various processes are performed while keeping the back surface of the wafer in contact with a support member or a suction member and maintaining the wafer in a horizontal state. Examples of wafer manufacturing processes include a wafer transfer process, a heat treatment process using a vertical boat, an RTA (Rapid Thermal Annealing) process, a single wafer epitaxial growth process, an SOI heat treatment process, and the like.

  Incidentally, in recent years, with the increase in diameter of wafers, further miniaturized highly integrated devices have been manufactured. For this reason, it is necessary to reduce as much as possible the contact damage caused by the contact between the wafer and the support member.

  In response to such a request, an edge handling technique has been proposed in which, when handling a wafer, only the edge portion of the wafer is held without holding the back surface portion of the wafer with an adsorption member or the like (see, for example, Patent Document 1). ).

  That is, in the prior art according to Patent Document 1, a handling device is proposed that has a hand member that is movable up and down, and at least three chuck claw members that are attached to the hand member and have a lower end portion as a flange portion. ing.

  In the handling apparatus, a tapered surface is formed on the upper surface portion of the flange portion of the chuck claw member. The handling apparatus is configured to hold the wafer on the tapered surface by lowering the hand member from above the wafer to the side of the wafer and closing each chuck claw member.

  According to the prior art according to Patent Document 1, since no force from the chuck claw member is applied to the wafer, a so-called thin wafer that has been difficult to hold by a method of adsorbing the back surface of the wafer or the like can be deformed or It is said that it can be stably held without causing cracks.

  However, when edge handling is performed on a large-diameter wafer having a diameter of 300 mm or more, the wafer is greatly bent due to its own weight, so that the holding becomes very unstable, and the wafer may be dropped during conveyance. .

  In particular, when a wafer having a diameter of 450 mm is edge-handed, the amount of deflection due to the weight of the wafer becomes around 1 mm even at room temperature. For this reason, when a high-temperature wafer is transferred after the thermal process is completed, the temperature difference in the wafer surface also increases, so that there is a high possibility that a larger deflection than that at room temperature will occur. The wafer bent in such a manner may come into contact with components in the apparatus, a storage container, or the like, resulting in contact scratches or metal contamination.

  On the other hand, in order to prevent the bent wafer from coming into contact with the components and storage containers in the apparatus, it is necessary to configure the apparatus by estimating the space necessary for the movement of the wafer to be large. There was a problem of increasing the size.

In order to solve the above-mentioned problems, the applicant of the present application has a diameter of 300 mm or more and a thickness of 700 to 1000 μm, and holds the back surface of the silicon wafer in contact with a support member or an adsorption member. A means for supporting the back surface of the silicon wafer within a region of radius x 0.50 to 0.80 of the silicon wafer is provided (for example, see Patent Document 2).
JP 2002-33378 A JP 2007-281030 A

  However, since the conventional technique according to Patent Document 2 supports the predetermined area of the wafer by surface contact with a ring-shaped support, the contact area between the wafer and the support is reduced, and contact caused by contact occurs. The request to minimize scratches as much as possible has not always been sufficient.

  Further, when a support tool is used as a so-called handling jig when loading a wafer having a diameter of 450 mm into an apparatus such as a wafer case, unless the support position by the support tool is appropriately determined, The amount of bending of the outer peripheral edge increases, and there is a problem that the positioning operation increases when the outer peripheral edge is placed on the loading groove or the like of the apparatus, resulting in poor workability.

That is, as shown in FIG. 10, the conventional support tool 120 differs in how the wafer 10 bends depending on the position where the wafer 10 is supported, and the difficulty of loading workability also varies. Here, FIG. 10 is a schematic diagram showing how the wafer 10 is loaded into the wafer case 50 by the conventional support 120.
In FIG. 10, for convenience of explanation, when the portion near the center of the wafer 10 is supported by the support 120 (loaded in the loading grooves 52 and 52 in the fourth stage from the top), the outer periphery of the wafer 10 is supported. The case where it is supported by the tool 120 (loaded in the loading grooves 52, 52 in the second stage from the top) is shown.

  As shown in FIG. 10, when the support tool 120 as a handling jig is disposed near the center of the wafer 10 to support the wafer 10, the wafer 10 is bent so as to protrude upward. The amount of bending at the outer peripheral edge of the wafer increases (see the wafer 10 loaded in the loading grooves 52, 52 in the fourth stage from the top).

  For this reason, when the wafer 10 is loaded into the loading grooves 52, 52, the loading height must be set in consideration of the amount of deflection at the outer peripheral edge of the wafer 10 in order to avoid interference with the convex portion 51 and the like. There was a problem that workability was not good.

  Further, when the wafer 10 is loaded into the wafer case 50, the support from the lower side by the support 120 is released, and only the vicinity of the outer peripheral edge of the wafer 10 is placed on the convex portions 51, 51. 10 is bent so as to protrude downward due to its own weight (see the wafer 10 loaded in the loading grooves 52, 52 at the first, third, and fifth stages from the top). That is, since the bending direction is opposite to that before the loading, there is a possibility that the wafer 10 is distorted and damaged or dust is generated.

  On the other hand, in order to suppress the occurrence of such inconvenience, as shown in FIG. 10, if the support tool 120 is arranged near the outer periphery of the wafer 10 to support the wafer 10, the outer periphery of the wafer 10 is supported. The amount of deflection becomes small (see the wafer 10 loaded in the loading grooves 52 and 52 in the second stage from the top). Therefore, it is not necessary to set the loading height in consideration of the amount of bending at the outer peripheral edge of the wafer 10 in order to avoid interference trouble with the convex portion 51 and the like, and the workability is improved.

  However, as described above, since the conventional support tool 120 supports the wafer 10 by surface contact, the contact area between the wafer 10 and the support tool 120 is reduced, and contact damage caused by the contact is reduced as much as possible. The request to do was not always enough.

  In addition, the prior art according to Patent Document 2 also discloses means for supporting the inside of the predetermined region of the wafer by multipoint contact (peripheral part 3 points or 4 points contact) with a support member. Since a wafer having a large diameter of about 450 mm is heavy, stress is concentrated on the contact portion in point contact, and there is a possibility that contact scratches may occur.

  Therefore, even for large-diameter wafers, it is possible to improve the workability of loading into the apparatus by minimizing the deflection of the outer peripheral edge of the wafer with a simple configuration, and contact with the wafer by reducing the contact area with the wafer. It has been desired to provide a semiconductor wafer support that can suppress scratches, dirt, and the like.

  The present invention has been made in view of the above, and even with a large-diameter wafer, it is possible to improve the workability of loading the apparatus by minimizing the bending of the outer peripheral edge of the wafer with a simple configuration. An object of the present invention is to provide a semiconductor wafer support that can reduce contact area with the wafer and suppress contact scratches, dirt, etc. on the wafer.

  In order to achieve the above object, the invention of (1) is a semiconductor wafer support that supports the back surface of a semiconductor wafer having a diameter of 450 mm and a thickness of 825 μm or more in line contact from below, The support is formed in an annular shape, and is disposed concentrically with the semiconductor wafer and in a region 0.8 to 0.98 times the radius of the semiconductor wafer from the center of the semiconductor wafer. Features.

  According to the invention of (1), the bending of the semiconductor wafer can be minimized by positioning the annularly formed support in the region. Moreover, since the support tool can support the back surface portion of the semiconductor wafer by making a line contact from below, the contact area with the semiconductor wafer can be reduced to prevent the semiconductor wafer from being damaged or soiled.

  (2) In the invention described in (1), it is preferable that a cross-sectional shape of the support is a triangle.

  According to the invention of (2), since the cross section is an extremely simple shape with a triangle, it is easy to manufacture a support, and the back surface of the semiconductor wafer can be supported by line contact from below with the apex of the triangle.

  According to the present invention, even with a large-diameter wafer, the bend can be minimized with a simple configuration, and the contact area with the wafer is reduced to prevent the wafer from being damaged or contaminated. A semiconductor wafer support that can be provided can be provided.

  Embodiments of the present invention will be described below in detail with reference to the drawings. In addition, this invention is not limited by this embodiment.

  The semiconductor wafer of this embodiment (hereinafter also simply referred to as “wafer”) has a diameter of 450 mm. Here, the wafer diameter of 450 mm is a numerical value as a target value at the time of manufacture, and includes an allowable error at the time of manufacture. For example, the wafer diameter includes a tolerance of ± 0.2 mm.

  Further, the wafer of this embodiment has a thickness of 825 μm or more. The significance is that if the wafer has a diameter of 450 mm and the thickness is 825 μm or more, the amount of deflection of the wafer is substantially the same as that of a conventional wafer (wafer having a diameter of 300 mm or less). It is in the point which can apply the deflection amount of the conventional wafer at the time of design and manufacture of an apparatus etc.

  FIG. 1 is a back view showing a wafer support according to an embodiment of the present invention, and FIG. 2 is a side sectional view showing the wafer support. FIG. 3 is an enlarged back view showing the wafer support in part A of FIG. 1, and shows the dimensions of the wafer support position and the contact surface.

  Hereinafter, the structure of the wafer support will be described with reference to FIGS. In the following description, members that are the same as or correspond to the members that have already been described are assigned the same reference numerals, and redundant descriptions are omitted or simplified.

  As shown in FIG. 1, the support 20 of the wafer 10 is for supporting the back surface portion 10a of the wafer 10 having a diameter of 450 mm and a thickness of 825 μm or more in line contact from below. The support 20 is formed in an annular shape.

  As shown in FIG. 2, the support 20 has a cross-sectional shape of a right isosceles triangle, and the tip portion corresponding to the base angle is chamfered into a minute flatness. That is, the support tool 20 can be regarded as supporting the back surface portion 10a of the wafer 10 from below with a substantially line contact by the support portion 20a.

  The chamfering shape of the support portion 20a is not limited to the flat surface as long as it can be considered that the wafer 10 is supported by the line contact, and may be a curved surface.

  In addition, the support 20 is disposed in a region 0.8 to 0.98 times the radius r of the wafer 10 from the center C of the wafer 10. That is, as shown in FIG. 1, the support 20 is surrounded by an imaginary line indicated by 0.8r and a solid line indicated by 0.98r (displayed as an outline of the wafer 10 for convenience of illustration). Arranged in the area. In FIG. 1, the inner diameter of the support 20 is indicated by L. The reason for disposing the support tool 20 in the region will be described later.

  In addition, preferable materials for the support 20 include quartz, single crystal silicon, polycrystalline silicon, silicon carbide, silicon-impregnated silicon carbide, and the like. What material should be used as the support tool 20 may be appropriately selected according to the thermal environment of the target process.

  As will be described later, when the wafer 10 having a diameter of 450 mm and a thickness of 825 μm or more is supported by the support tool 20, the amount of deflection is small when the inner diameter L of the support tool 20 is 360 to 440 mm. It is preferable to support by this support tool 20 having an inner diameter L. The inner diameter L of 360 to 440 mm corresponds to 0.8r to 0.98r when converted by the radius r (= 225 mm) of the wafer 10 having a diameter of 450 mm.

  Therefore, according to the present embodiment, when the wafer 10 having a diameter of 450 mm and a thickness of 825 μm or more is supported by the support tool 20, it is concentric with the wafer 10 and from the center C of the wafer 10. When the wafer 10 is disposed in a region 0.8 to 0.98 times the radius r of the wafer 10, the deflection of the wafer 10 can be minimized. By setting the support position by the support tool 20 in this way, it is possible to improve workability when loading the wafer 10 into a wafer case or the like, and it is possible to make the apparatus to be loaded compact.

Next, the reason why the loading workability is improved will be described with reference to FIGS.
FIG. 4 is a schematic diagram showing the wafer 10 supported by the support 20 near the inner periphery (for example, the inner diameter L of the support 20 is less than 300 mm) before being loaded into the loading groove 52 of the wafer case 50. It shows the state of.

  FIG. 5 is a schematic diagram showing the wafer 10 supported by the support 20 near the outer periphery (for example, the inner diameter L of the support 20 is 300 mm or more), and is loaded into the loading groove 52 of the wafer case 50. It shows the previous situation. 4 and 5, the wafer case 50 shows only a part of one end side of the wafer 10, and the other end side is not shown.

  As shown in FIG. 4, when the support 20 as a handling jig is disposed outside the region 0.8 to 0.98 times the radius r of the wafer 10 to support the wafer 10, the wafer 10 protrudes upward. Therefore, the amount of bending at the outer peripheral edge of the wafer 10 increases.

  For this reason, when loading the wafer 10 into the loading groove 52, the loading height must be set in consideration of the amount of deflection at the outer peripheral edge of the wafer 10 in order to avoid interference with the convex portion 51 and the like. The workability is not good.

  Further, when the wafer 10 is loaded in the wafer case 50, the support from the lower side by the support 20 is released, and only the vicinity of the outer peripheral edge of the wafer 10 is placed on the convex portions 51, 51. 10 is bent so as to be convex downward by its own weight. That is, since the bending direction is opposite to that before the loading, there is a possibility that the wafer 10 is distorted and damaged or dust is generated.

  Therefore, in order to suppress the occurrence of such inconvenience, in this embodiment, as shown in FIG. 5, the support 20 as a handling jig is 0.8 to 0.98 times the radius r of the wafer 10. It was arranged in the area.

  That is, if the support tool 20 is disposed in the above-described region to support the wafer 10, the amount of deflection at the outer peripheral edge of the wafer 10 becomes negligibly small as will be described later. For this reason, when loading the wafer 10 into the loading groove 52 formed between the convex portions 51, 51 in the wafer case 50, it is not necessary to consider the amount of bending of the outer peripheral edge of the wafer 10, and the positioning height of the support 20 is increased. The height may be adjusted so as to be substantially the same as the height of the loading groove 52.

  In addition, since it is not necessary to consider the amount of bending of the outer peripheral edge of the wafer 10, the vertical movement of the support 20 as a handling jig can be reduced, and the time required for positioning can be reduced. It can be performed.

  Further, since the amount of deflection at the outer peripheral edge of the wafer 10 is negligibly small, the width of the loading groove 52 can be set small when designing the wafer case 50, and the entire apparatus can be configured compactly.

  Therefore, even for a large-diameter wafer 10 having a diameter of 450 mm, the same loading operation as that for a conventional wafer having a diameter of 300 mm or less may be performed, and workability can be improved.

  Further, since the support 20 has a right isosceles triangle cross-sectional shape and is in line contact with the back surface portion 10a of the wafer 10 by the support portion 20a, the contact area is small and the wafer 10 is scratched or soiled. Can be suppressed.

  Further, since the support 20 is disposed in a region 0.8 to 0.98 times the radius r of the wafer 10 from the center C of the wafer 10, the support 20 can support the outer peripheral portion of the wafer 10. Therefore, since the wafer 10 can be supported while avoiding the central portion of the wafer 10 where the semiconductor chip is used as much as possible, it is possible to suppress the wafer 10 from being scratched or soiled, and the acquisition rate of the semiconductor chip used area. Can be increased.

  Moreover, since the support 20 can be comprised by the simple shape of an annular | circular shape, even when applied to the said handling jig | tool, a structure can be simplified and weight reduction and reduction of manufacturing cost can be aimed at.

  Furthermore, the support tool 20 is provided on a horizontal base board portion (not shown) provided in various apparatuses with a very small protruding height (for example, a protruding height of 5 mm as shown in FIG. 2). be able to. For this reason, the height of the apparatus such as the wafer case 50 can be reduced.

  Further, by providing an opening for access for holding and loading the wafer 10 from the horizontal direction in the apparatus, it is possible to easily realize access to the wafer 10 in each step of transfer and heat treatment.

  In addition, in the said embodiment, although demonstrated as what forms a support tool in an annular | circular shape by one member, it is not limited to this. That is, as shown in FIG. 6, the support may be configured in a substantially annular shape as a whole by two arcuate members 30 and 40 having different curvatures. Here, FIG. 6 is a back view showing another wafer support of the present invention.

  As shown in FIG. 6, the support tool is configured in an approximately annular shape as a whole by two arcuate members 30 and 40 having different curvatures. That is, the arcuate member 40 is set to have a smaller curvature than the arcuate member 30. Further, both end portions of the arc-shaped members 30 and 40 are in contact with each other.

  Although not shown in the drawings, the arc-shaped members 30 and 40 have a right-angled isosceles triangle, and the tip portions corresponding to the base angles are each chamfered to a minute flatness. That is, the arc-shaped members 30 and 40 can be regarded as supporting the back surface portion 10a of the wafer 10 from the lower side by substantially line contact with the tip portion corresponding to the one base angle.

  The curvatures and dimensions of the arc-shaped members 30 and 40 can be set according to the above embodiment. The chamfered shape of the tip portion is not limited to the flat surface as long as it can be considered that the wafer 10 is supported by the line contact, and may be a curved surface.

  Further, the arc-shaped members 30 and 40 are arranged so that the center C coincides with the center C of the wafer 10, and an area 0.8 to 0.98 times the radius of the wafer 10 from the center C of the wafer 10. Placed inside.

  That is, as shown in FIG. 6, the arc-shaped members 30 and 40 include an imaginary line indicated by 0.8r and a solid line indicated by 0.98r (displayed as an outline of the wafer 10 for convenience of illustration). It is arranged in the area surrounded by.

  The reason why the arc-shaped members 30 and 40 are disposed in the region 0.8 to 0.98 times the radius of the wafer 10 is the same as in the first embodiment, and thus the duplicate description is omitted. To do.

  Preferred materials for the arcuate members 30, 40 of the support include quartz, single crystal silicon, polycrystalline silicon, silicon carbide, silicon-impregnated silicon carbide, and the like. What material is used as the arcuate members 30 and 40 of the support may be appropriately selected according to the thermal environment of the target process.

  The arc-shaped members 30 and 40 can also be expected to have the same effect as the above-described embodiment.

  Moreover, the support tool may be comprised by the 3 or more circular-arc-shaped member which has a different curvature, and the whole shape is comprised by the substantially annular shape, and the effect similar to the effect which the said embodiment show | plays can be anticipated.

  Next, the present invention will be described in more detail using examples with reference to FIGS. 1 to 3, 7 and 8. In addition, this Example does not limit the scope of the present invention.

  In this embodiment, the wafer 10 is made of single crystal silicon having a diameter of 450 mm. And the thickness of the wafer 10 was 825 micrometers, 925 micrometers, 975 micrometers, and 1800 micrometers.

  As shown in FIG. 1, the support 20 is formed in an annular shape as a whole. Further, as shown in FIG. 2, the support 20 has a cross-sectional shape that is a right-angled isosceles triangle.

  The dimensions of each part of the support tool 20 are as shown in FIG. That is, the isosceles portion after chamfering of the support 20 was formed to 5 mm, and the chamfered portion of the support portion 20a (contact width with the wafer 10) was formed to 1 mm. The height of the support part 20a was 5 mm. 3 shows an example in which the support portion 20a of the support 20 is arranged so as to be close to 4 mm from the outer peripheral edge portion of the wafer 10 toward the center C side.

  FIG. 7 is a graph showing the amount of deflection at each part in the surface of the wafer 10, and compares the inner diameter L of the support 20 with various changes of 100 mm, 200 mm, 300 mm, 400 mm, and 440 mm. Here, the above in-plane parts are the center C of the wafer 10 shown in FIG. 1, the position R of r / 2 in the radial direction, the position E that is 10 mm closer to the center C side from the outer peripheral edge of the wafer 10, and the support 20. It is a position Ring corresponding to the outer peripheral edge portion of.

  FIG. 8 is a graph showing the relationship between the amount of deflection at position E of the wafer 10 and the inner diameter L of the support 20.

  As shown in FIG. 7, when the inner diameter L of the support tool 20 is 300 to 400 mm, the amount of deflection at all positions (center C, position R, position Ring, position E) regardless of the thickness of the wafer 10 is as follows. It can be seen that it is generally within 300 μm. It can also be seen that when the inner diameter L of the support 20 is 440 mm, the thinner the wafer 10, the greater the amount of deflection at the center C.

  Further, as shown in FIG. 8, at the position E that is 10 mm closer to the center C side from the outer peripheral edge of the wafer 10, when the inner diameter L of the support 20 is 300 to 440 mm, the deflection amount is less than 125 μm at any thickness. It can be seen that the wafer 10 can be supported well.

  As described above, according to the present invention, in particular, by supporting the outer peripheral edge portion of the wafer 10 so as to reduce the bending amount, the wafer 10 is prevented from being greatly distorted and the workability of loading is improved. Therefore, when the inner diameter L of the support 20 is 300 to 440 mm, the object can be sufficiently achieved.

  From the above, when the wafer 10 having a diameter of 450 mm and a thickness of 825 μm or more is supported by the support tool 20, the amount of deflection is small when the inner diameter L of the support tool 20 is 300 to 440 mm. The inner diameter L is preferably supported. The inner diameter L of the support 20 being 300 to 440 mm corresponds to 0.67 r to 0.98 r when converted by the radius r (= 225 mm) of the wafer 10 having a diameter of 450 mm.

  Therefore, according to the present embodiment, when the wafer 10 having a diameter of 450 mm and a thickness of 825 μm or more is supported by the support tool 20, the support tool 20 moves from the center C of the wafer 10 to the wafer 10. When arranged in a region 0.67 to 0.98 times the radius r, the amount of deflection of the outer peripheral edge portion (position E) of the wafer 10 can be minimized.

  Further, according to the present embodiment, for example, a wafer 10 having a diameter of 450 mm and a thickness t of 1 mm is supported by a support 20 having a height h of 5 mm (refer to FIG. 2 for detailed dimensions of each part). When supporting, as shown in FIG. 9, the dimension of each part of the wafer case 50 can be set as follows as an example. Here, FIG. 9 is a partial cross-sectional view showing the loading groove 52 and the like of the wafer case 50.

  That is, when the wafer 10 is loaded into or removed from the wafer case 50, the region width k in which the wafer 10 moves up and down is 4 mm (up and down ± 2 mm), and the vibration width v of the wafer 10 during loading is 2 mm (up and down). ± 1 mm), and when the amount of downward deflection u of the wafer 10 after loading is estimated as 1 mm, for example, the pitch p of the convex portions 51 and 51 is 7 mm, and the groove width s of the loading groove 52 is 2 to 2.5 mm. Can be set to

  Here, the reason why the pitch p of the convex portions 51 and 51 is set to 7 mm is that the support tool 20 according to this embodiment is applied to the conventional wafer case 50 manufactured for a wafer having a diameter of 300 mm. . Therefore, according to the support 20 according to the present embodiment, the amount of deflection of the outer peripheral edge of the wafer 10 can be minimized by supporting the inside of the region 0.67 to 0.98 times the radius r of the wafer 10. The wafer 10 can be loaded or taken out without changing the pitch p of the wafer case 50. That is, even with a large-diameter wafer 10, existing equipment can be used as it is.

  Further, if a predetermined strength (rigidity) can be ensured by appropriately selecting the material of the support tool 20 and the height h of the support tool 20 can be further reduced, the wafer case can be reduced without reducing the number of wafers 10 loaded. Since the pitch p of the 50 convex portions 51 and 51 can be set smaller than the above value, the wafer case 50 can be further reduced in size.

  In FIG. 9, the wafer case 50 has been described as an example to be loaded with the wafer 10. However, the present invention is not limited to this, and the present invention is also applied to a heat treatment boat, a single wafer annealing furnace, a wafer transfer stage, and the like. The support tool 20 according to the example can be applied, and the same effect can be expected.

It is a reverse view which shows the support tool of the wafer which concerns on embodiment of this invention. It is a sectional side view which shows the support tool of a wafer. It is an expanded back view which shows the support tool of the wafer in the A section of FIG. It is a schematic diagram which shows the wafer by which the inner peripheral part vicinity was supported by the support tool. It is a schematic diagram which shows the wafer by which the outer peripheral part vicinity was supported by the support tool. It is a back view which shows the support tool of the other wafer of this invention. It is a graph which shows the deflection amount in each part in the surface of a wafer. It is a graph which shows the relationship between the deflection amount in the position E of a wafer, and the internal diameter of a support tool. It is a fragmentary sectional view which shows the loading groove | channel etc. of a wafer case. It is a schematic diagram which shows a mode that a wafer is loaded in a wafer case with the conventional support tool.

Explanation of symbols

10 Wafer (semiconductor wafer)
10a Back part 20 Support tool 20a Support part 30, 40 Arc-shaped member (support tool)
C center L inner diameter r radius

Claims (2)

A support for a semiconductor wafer having a diameter of 450 mm and a thickness of 825 μm or more for supporting the back surface of the semiconductor wafer in line contact from below,
The support is formed in an annular shape, and is disposed concentrically with the semiconductor wafer and in a region 0.8 to 0.98 times the radius of the semiconductor wafer from the center of the semiconductor wafer. A semiconductor wafer support device.   The method of manufacturing a semiconductor wafer according to claim 1, wherein a cross-sectional shape of the support is a triangle.

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