JP2010050087A - 成膜用基板及び発光装置の作製方法 - Google Patents

成膜用基板及び発光装置の作製方法 Download PDF

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Publication number
JP2010050087A
JP2010050087A JP2009167472A JP2009167472A JP2010050087A JP 2010050087 A JP2010050087 A JP 2010050087A JP 2009167472 A JP2009167472 A JP 2009167472A JP 2009167472 A JP2009167472 A JP 2009167472A JP 2010050087 A JP2010050087 A JP 2010050087A
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Prior art keywords
layer
light
substrate
light absorption
absorption layer
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JP2009167472A
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Japanese (ja)
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JP2010050087A5 (enExample
Inventor
Tetsushi Seo
哲史 瀬尾
Kohei Yokoyama
浩平 横山
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2009167472A priority Critical patent/JP2010050087A/ja
Publication of JP2010050087A publication Critical patent/JP2010050087A/ja
Publication of JP2010050087A5 publication Critical patent/JP2010050087A5/ja
Withdrawn legal-status Critical Current

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/048Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/18Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60Forming conductive regions or layers, e.g. electrodes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495Thickness [relative or absolute]
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00Stock material or miscellaneous articles
    • Y10T428/24Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24942Structurally defined web or sheet [e.g., overall dimension, etc.] including components having same physical characteristic in differing degree
    • Y10T428/2495Thickness [relative or absolute]
    • Y10T428/24967Absolute thicknesses specified
    • Y10T428/24975No layer or component greater than 5 mils thick

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)
JP2009167472A 2008-07-21 2009-07-16 成膜用基板及び発光装置の作製方法 Withdrawn JP2010050087A (ja)

Priority Applications (1)

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JP2009167472A JP2010050087A (ja) 2008-07-21 2009-07-16 成膜用基板及び発光装置の作製方法

Applications Claiming Priority (2)

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JP2008188004 2008-07-21
JP2009167472A JP2010050087A (ja) 2008-07-21 2009-07-16 成膜用基板及び発光装置の作製方法

Related Child Applications (1)

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JP2013255155A Division JP5728068B2 (ja) 2008-07-21 2013-12-10 成膜用基板

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JP2010050087A true JP2010050087A (ja) 2010-03-04
JP2010050087A5 JP2010050087A5 (enExample) 2012-08-16

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JP2013255155A Expired - Fee Related JP5728068B2 (ja) 2008-07-21 2013-12-10 成膜用基板

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US (2) US8574709B2 (enExample)
JP (2) JP2010050087A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109722628A (zh) * 2017-10-31 2019-05-07 乐金显示有限公司 超精细图案沉积设备、使用其的超精细图案沉积方法以及通过该方法制造的发光显示装置

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JP5416987B2 (ja) * 2008-02-29 2014-02-12 株式会社半導体エネルギー研究所 成膜方法及び発光装置の作製方法
US8574709B2 (en) * 2008-07-21 2013-11-05 Semiconductor Energy Laboratory Co., Ltd. Deposition donor substrate and method for manufacturing light-emitting device
US8486736B2 (en) * 2008-10-20 2013-07-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing light-emitting device
WO2011125570A1 (ja) * 2010-03-31 2011-10-13 東レ株式会社 転写用ドナー基板、デバイスの製造方法および有機el素子
KR20140090458A (ko) * 2013-01-09 2014-07-17 삼성디스플레이 주식회사 유기 발광 표시 장치 및 이의 제조 방법
WO2014158187A1 (en) * 2013-03-29 2014-10-02 Applied Materials, Inc. Substrate imprinted with a pattern for forming isolated device regions
KR102055683B1 (ko) 2013-03-29 2019-12-16 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102056864B1 (ko) * 2013-04-09 2019-12-18 삼성디스플레이 주식회사 미러 기능을 구비한 유기 발광 표시 장치
KR20150056112A (ko) * 2013-11-14 2015-05-26 삼성디스플레이 주식회사 막 형성용 마스크, 이를 이용한 막 형성 방법 및 유기 발광 표시 장치의 제조 방법
JP6136890B2 (ja) 2013-11-26 2017-05-31 ソニー株式会社 表示装置、表示装置の製造方法および電子機器
KR20150109013A (ko) * 2014-03-18 2015-10-01 삼성디스플레이 주식회사 유기막 패턴 형성용 마스크, 이를 이용한 유기막 패턴 형성 방법 및 유기 발광 표시 장치의 제조 방법
KR20160034529A (ko) * 2014-09-19 2016-03-30 삼성디스플레이 주식회사 광학적 패턴 전사 마스크 및 그의 제조 방법
DE102014113944A1 (de) * 2014-09-26 2016-04-14 Von Ardenne Gmbh Transfermaske mit hohem Auflösungsvermögen und Verfahren zu deren Herstellung
KR20160049610A (ko) * 2014-10-27 2016-05-10 삼성디스플레이 주식회사 광학 패터닝 마스크 및 이를 이용한 표시 장치의 제조 방법
US11089690B2 (en) * 2016-03-16 2021-08-10 Ncc Nano, Llc Method for depositing a functional material on a substrate
KR102180071B1 (ko) * 2017-10-31 2020-11-17 엘지디스플레이 주식회사 초미세 패턴 증착장치, 이를 이용한 초미세 패턴 증착방법 그리고 초미세 패턴 증착방법에 의해 제작된 전계발광표시장치
WO2019113852A1 (zh) * 2017-12-13 2019-06-20 深圳市柔宇科技有限公司 用于真空蒸镀的掩膜板、蒸镀方法、显示装置及蒸镀设备
CN110224014B (zh) * 2019-06-21 2021-12-28 京东方科技集团股份有限公司 一种图案的制备方法及显示基板的制备方法
JP6772348B2 (ja) * 2019-07-26 2020-10-21 堺ディスプレイプロダクト株式会社 フレキシブルoledデバイス、その製造方法及び支持基板

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109722628A (zh) * 2017-10-31 2019-05-07 乐金显示有限公司 超精细图案沉积设备、使用其的超精细图案沉积方法以及通过该方法制造的发光显示装置
KR20190048936A (ko) * 2017-10-31 2019-05-09 엘지디스플레이 주식회사 초미세 패턴 증착장치, 이를 이용한 초미세 패턴 증착방법 그리고 초미세 패턴 증착방법에 의해 제작된 전계발광표시장치
KR102180070B1 (ko) * 2017-10-31 2020-11-17 엘지디스플레이 주식회사 초미세 패턴 증착장치, 이를 이용한 초미세 패턴 증착방법 그리고 초미세 패턴 증착방법에 의해 제작된 전계발광표시장치
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CN109722628B (zh) * 2017-10-31 2022-01-25 乐金显示有限公司 超精细图案沉积设备、使用其的超精细图案沉积方法以及通过该方法制造的发光显示装置

Also Published As

Publication number Publication date
US20140057376A1 (en) 2014-02-27
US20100015424A1 (en) 2010-01-21
US8574709B2 (en) 2013-11-05
JP2014044966A (ja) 2014-03-13
US9543548B2 (en) 2017-01-10
JP5728068B2 (ja) 2015-06-03

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