JP2010045377A - 微細構造を有する両面型位置検知型検出器 - Google Patents
微細構造を有する両面型位置検知型検出器 Download PDFInfo
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- JP2010045377A JP2010045377A JP2009212198A JP2009212198A JP2010045377A JP 2010045377 A JP2010045377 A JP 2010045377A JP 2009212198 A JP2009212198 A JP 2009212198A JP 2009212198 A JP2009212198 A JP 2009212198A JP 2010045377 A JP2010045377 A JP 2010045377A
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- 239000002245 particle Substances 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 9
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 17
- 239000006185 dispersion Substances 0.000 claims description 10
- 229910001416 lithium ion Inorganic materials 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 2
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000001459 lithography Methods 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 12
- 229910052744 lithium Inorganic materials 0.000 description 12
- 238000000034 method Methods 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 8
- 229910052782 aluminium Inorganic materials 0.000 description 8
- 238000001514 detection method Methods 0.000 description 7
- 238000005259 measurement Methods 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 230000011218 segmentation Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 239000000969 carrier Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 230000005251 gamma ray Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1443—Devices controlled by radiation with at least one potential jump or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/1446—Devices controlled by radiation in a repetitive configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type
- H01L31/1055—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PIN type the devices comprising amorphous materials of Group IV of the Periodic Table
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
- Steroid Compounds (AREA)
Abstract
【解決手段】上記検出器は半導体材料でできている複数のダイオードとn−接点(1)とp−接点(4)を有し、上記n−接点はn−層を個々のセグメントに細分化することにより得られる。n−層の上記セグメントは幅が20〜500μmである。上記検出器は半導体材料の一面にイオンを分散してn−層を作ることによって作られる。金属層はその上に蒸着される。リソグラフィーによってセグメント化されたセグメント間をエッチングして溝を形成する。本発明の検出器は高性能でとりわけ高い位置分解能と高い計測速度を可能にする。
【選択図】図1
Description
Si(Li)検出器は比較的厚い(2−10mm)ケイ素のPINダイオードである。薄い(<1μm)p−接点はホウ素の注入又は金の蒸着により作られる。厚め(10〜500μm)のn−接点はリチウム分散によって作られる。2〜3mm厚のi−領域は原料中のアクセプターをリチウムイオンが補償するドリフト過程により得られる。
2 構造体
3 リチウム分散型接点のガードリング
4 n+−接点と同一の構造体を有する(n+−接点の構造体と直交する)p+−接点
5:検出素子
6:溝
7:アルミニウム層
8:リチウム分散によって作られた接点
9:リチウムで補償されたケイ素
10:溝
11:検出素子
Claims (9)
- 光子及び/又は荷電粒子の位置及び/又はエネルギーを測定するための検出器であって、半導体材料で作られた複数のダイオードとn−接点とp−接点を有し、前記n−接点はn−層を個々のセグメントに更に細分化することにより得られる検出器であって、前記n−層の各セグメントは幅が少なくとも20μmであり、前記n−接点はLi分散により製造された接点の表面層を取り除くことにより10〜30μm厚としたものであることを特徴とする検出器。
- 半導体材料はケイ素である、請求項1に記載の検出器。
- n−接点とp−接点のセグメントは細板(ストリップ)状に形成され、p−接点のセグメントは幅が500μm以下であり、n−接点の細板状セグメントと直交するよう配置されている請求項1又は2に記載の検出器。
- n−接点のセグメントは1000μm×1000μm以下の大きさである請求項1〜3のいずれか一項に記載の検出器。
- n−接点のセグメントは、10〜50μm幅の溝によって他のセグメントと分離されている請求項1〜4のいずれか一項に記載の検出器。
- n−接点は、その上部に蒸着された金属層を有する請求項1〜5のいずれか一項に記載の検出器。
- 各n−接点はそれぞれ増幅器と接続されている請求項1〜6のいずれか一項に記載の検出器。
- 光子及び/又は荷電粒子の位置及び/又はエネルギーを測定するための検出器であって、半導体材料で作られた複数のダイオードとn−接点とp−接点を有し、前記n−接点はn−層を個々のセグメントに更に細分化することにより得られ、前記n−層の各セグメントは幅が少なくとも20μmであり、前記n−接点はLi分散により製造された10〜30μm厚のものであり、
半導体材料の片側にLiイオンの分散によりn−接点を製造し、
続いて前記n−接点の表面層を取り除くことにより所望の厚さのn−接点を製造し、
その上に金属層を蒸着し、
セグメント用リソグラフィーによるエッチングでn−接点に溝を形成することにより製造されることを特徴とする検出器。 - 半導体材料の片側にLiイオンの分散によりn−接点を製造する工程は、約150℃で行われるものである、請求項8に記載の検出器。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10128654A DE10128654B4 (de) | 2001-06-15 | 2001-06-15 | Beidseitig mikrostrukturierter, ortsempfindlicher Detektor |
DE10128654.6 | 2001-06-15 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003506007A Division JP4494011B2 (ja) | 2001-06-15 | 2002-06-05 | 微細構造を有する両面型位置検知型検出器 |
Publications (2)
Publication Number | Publication Date |
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JP2010045377A true JP2010045377A (ja) | 2010-02-25 |
JP5032542B2 JP5032542B2 (ja) | 2012-09-26 |
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Application Number | Title | Priority Date | Filing Date |
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JP2003506007A Expired - Fee Related JP4494011B2 (ja) | 2001-06-15 | 2002-06-05 | 微細構造を有する両面型位置検知型検出器 |
JP2009212198A Expired - Fee Related JP5032542B2 (ja) | 2001-06-15 | 2009-09-14 | 微細構造を有する両面型位置検知型検出器 |
Family Applications Before (1)
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JP2003506007A Expired - Fee Related JP4494011B2 (ja) | 2001-06-15 | 2002-06-05 | 微細構造を有する両面型位置検知型検出器 |
Country Status (7)
Country | Link |
---|---|
US (2) | US7242006B2 (ja) |
EP (2) | EP2276073A2 (ja) |
JP (2) | JP4494011B2 (ja) |
AT (1) | ATE522936T1 (ja) |
DE (1) | DE10128654B4 (ja) |
DK (1) | DK1399977T3 (ja) |
WO (1) | WO2002103796A2 (ja) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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DE10153241B4 (de) * | 2001-10-31 | 2008-04-03 | Forschungszentrum Jülich GmbH | Transmissionsdetektor nebst Herstellungsverfahren |
US6928144B2 (en) * | 2003-08-01 | 2005-08-09 | General Electric Company | Guard ring for direct photo-to-electron conversion detector array |
US8635661B2 (en) * | 2003-12-23 | 2014-01-21 | Mcafee, Inc. | System and method for enforcing a security policy on mobile devices using dynamically generated security profiles |
US7727796B2 (en) * | 2007-04-26 | 2010-06-01 | Oxford Instruments Analytical Oy | Method for patterning detector crystal using Q-switched laser |
WO2009043347A1 (en) | 2007-10-04 | 2009-04-09 | Danmarks Tekniske Universitet | A detector for detecting particle radiation of an energy in the range of 150 ev to 300 kev, and a materials mapping apparatus with such a detector. |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3413529A (en) * | 1966-03-08 | 1968-11-26 | Atomic Energy Commission Usa | A semiconductor detector having a lithium compensated shelf region between opposite conductivity type regions |
JPH10335691A (ja) * | 1997-05-30 | 1998-12-18 | Technos Kenkyusho:Kk | 半導体検出器 |
JP2000323741A (ja) * | 1999-03-11 | 2000-11-24 | Reitekku:Kk | Pn接合部分を有するドリフト型シリコン放射線検出器の製造方法 |
Family Cites Families (16)
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FR1522805A (fr) * | 1966-05-12 | 1968-04-26 | Varian Associates | Détecteur semiconducteur de rayonnement |
US3691389A (en) * | 1969-06-09 | 1972-09-12 | Ronald Ellis | Radiation detector comprising semi-conductor body incorporating a two-dimensional array of p-i-n-devices |
DE2239953A1 (de) * | 1972-08-14 | 1974-02-28 | Siemens Ag | Detektoranordnung |
US4055765A (en) * | 1976-04-27 | 1977-10-25 | The Ohio State University | Gamma camera system with composite solid state detector |
US4411059A (en) * | 1979-10-18 | 1983-10-25 | Picker Corporation | Method for manufacturing a charge splitting resistive layer for a semiconductor gamma camera |
US4292645A (en) * | 1979-10-18 | 1981-09-29 | Picker Corporation | Charge splitting resistive layer for a semiconductor gamma camera |
US4785186A (en) * | 1986-10-21 | 1988-11-15 | Xerox Corporation | Amorphous silicon ionizing particle detectors |
JP2621159B2 (ja) * | 1987-02-16 | 1997-06-18 | 株式会社島津製作所 | 半導体放射線位置検出装置 |
JPH01216290A (ja) * | 1988-02-24 | 1989-08-30 | Shimadzu Corp | 半導体放射線位置検出器とその製造方法 |
US5164809A (en) * | 1989-04-21 | 1992-11-17 | The Regents Of The University Of Calif. | Amorphous silicon radiation detectors |
DE19609073A1 (de) * | 1996-03-08 | 1997-09-11 | Forschungszentrum Juelich Gmbh | Farbselektives Si-Detektorarray |
US6169287B1 (en) * | 1997-03-10 | 2001-01-02 | William K. Warburton | X-ray detector method and apparatus for obtaining spatial, energy, and/or timing information using signals from neighboring electrodes in an electrode array |
US5994713A (en) * | 1997-06-25 | 1999-11-30 | Quantum Imaging Corp. | Filmless photon imaging apparatus |
FR2820243B1 (fr) * | 2001-01-31 | 2003-06-13 | Univ Paris Curie | Procede et dispositif de fabrication d'un detecteur electronique en gaas pour la detection de rayons x pour l'imagerie |
DE10153241B4 (de) * | 2001-10-31 | 2008-04-03 | Forschungszentrum Jülich GmbH | Transmissionsdetektor nebst Herstellungsverfahren |
US7060523B2 (en) * | 2003-05-12 | 2006-06-13 | The Regents Of The University Of California | Lithium-drifted silicon detector with segmented contacts |
-
2001
- 2001-06-15 DE DE10128654A patent/DE10128654B4/de not_active Withdrawn - After Issue
-
2002
- 2002-06-05 EP EP10183314A patent/EP2276073A2/de not_active Withdrawn
- 2002-06-05 US US10/481,091 patent/US7242006B2/en not_active Expired - Fee Related
- 2002-06-05 JP JP2003506007A patent/JP4494011B2/ja not_active Expired - Fee Related
- 2002-06-05 WO PCT/EP2002/006116 patent/WO2002103796A2/de active Application Filing
- 2002-06-05 EP EP02764578A patent/EP1399977B1/de not_active Expired - Lifetime
- 2002-06-05 AT AT02764578T patent/ATE522936T1/de active
- 2002-06-05 DK DK02764578.7T patent/DK1399977T3/da active
-
2006
- 2006-12-15 US US11/639,479 patent/US7915592B2/en not_active Expired - Fee Related
-
2009
- 2009-09-14 JP JP2009212198A patent/JP5032542B2/ja not_active Expired - Fee Related
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3413529A (en) * | 1966-03-08 | 1968-11-26 | Atomic Energy Commission Usa | A semiconductor detector having a lithium compensated shelf region between opposite conductivity type regions |
JPH10335691A (ja) * | 1997-05-30 | 1998-12-18 | Technos Kenkyusho:Kk | 半導体検出器 |
JP2000323741A (ja) * | 1999-03-11 | 2000-11-24 | Reitekku:Kk | Pn接合部分を有するドリフト型シリコン放射線検出器の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JP4494011B2 (ja) | 2010-06-30 |
DE10128654B4 (de) | 2008-04-10 |
DK1399977T3 (da) | 2012-01-02 |
WO2002103796A2 (de) | 2002-12-27 |
US7242006B2 (en) | 2007-07-10 |
DE10128654A1 (de) | 2003-01-02 |
US7915592B2 (en) | 2011-03-29 |
US20040178461A1 (en) | 2004-09-16 |
WO2002103796A3 (de) | 2004-01-08 |
JP2004534395A (ja) | 2004-11-11 |
EP1399977A2 (de) | 2004-03-24 |
US20070152288A1 (en) | 2007-07-05 |
EP1399977B1 (de) | 2011-08-31 |
JP5032542B2 (ja) | 2012-09-26 |
EP2276073A2 (de) | 2011-01-19 |
ATE522936T1 (de) | 2011-09-15 |
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