JP2010045146A - Stage member for laser annealing, method of manufacturing the same, and laser annealing method - Google Patents

Stage member for laser annealing, method of manufacturing the same, and laser annealing method Download PDF

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JP2010045146A
JP2010045146A JP2008207566A JP2008207566A JP2010045146A JP 2010045146 A JP2010045146 A JP 2010045146A JP 2008207566 A JP2008207566 A JP 2008207566A JP 2008207566 A JP2008207566 A JP 2008207566A JP 2010045146 A JP2010045146 A JP 2010045146A
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stage member
laser
laser annealing
processed
light
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Norihito Kawaguchi
紀仁 河口
Ryusuke Kawakami
隆介 川上
Kenichiro Nishida
健一郎 西田
Miyuki Masaki
みゆき 正木
Masaru Morita
勝 森田
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IHI Corp
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<P>PROBLEM TO BE SOLVED: To provide a stage member for laser annealing, a method of manufacturing the same, and a laser annealing method capable of reducing concentric circle stripes (Newton rings) without deteriorating an annealing property. <P>SOLUTION: In a stage member 11 for laser annealing, an upper surface 11a on which a processed body 7 is mounted is made to have a surface roughness with which the surface becomes clouded, for example a surface roughness of 0.1 &mu;m or more by Ra, by a sandblasting treatment, a hydrofluoric acid treatment, mechanical polishing or the like. Thereby, since interference between light 2 reflected at the upper surface 11a of the stage member 11 and light 2a reflected at a substrate bottom surface 8a of the treated body is reduced, concentric circle stripes caused by the reflection light can be reduced. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

本発明は、レーザ光の照射による処理がなされる被処理体を載せるためのレーザアニール用ステージ部材とその製造方法並びにレーザニール方法に関する。   The present invention relates to a laser annealing stage member for mounting an object to be processed by laser light irradiation, a manufacturing method thereof, and a laser annealing method.

従来、高性能な薄膜トランジスタを製作するため、ガラス基板などの絶縁性基板上に形成された非晶質シリコン膜にレーザ光を照射して多結晶シリコン膜に改質するレーザアニール処理が知られている(例えば特許文献1を参照)。この方法によれば、シリコン膜の溶融固化過程における結晶化現象を利用するため、比較的粒径が大きく、高品質な多結晶シリコン膜を得ることができる。   Conventionally, in order to manufacture a high-performance thin film transistor, a laser annealing process is known in which an amorphous silicon film formed on an insulating substrate such as a glass substrate is irradiated with laser light to be modified into a polycrystalline silicon film. (For example, refer to Patent Document 1). According to this method, since the crystallization phenomenon in the melting and solidifying process of the silicon film is used, a high-quality polycrystalline silicon film having a relatively large particle size can be obtained.

ガラス基板は、従来よく使用されてきた石英基板と比較し、安価で加工性に優れ、大面積化が可能であるというメリットを持っている。レーザ照射によれば基板の温度をあまり上昇させることなくシリコン膜を加熱・溶融できるので、融点が600℃以下であるガラス基板を利用することができる。   A glass substrate has the advantages of being inexpensive, excellent in workability, and capable of increasing the area, compared to a quartz substrate that has been frequently used. Since the silicon film can be heated and melted by laser irradiation without increasing the temperature of the substrate so much, a glass substrate having a melting point of 600 ° C. or lower can be used.

レーザアニールのレーザ光源としては、ガスレーザであるエキシマレーザのほか、近年では固体レーザであるYAGレーザも利用されている。YAGレーザの場合、基本波を第2高調波(波長532mm)に変調し、これを非晶質シリコン膜に照射すると、その波長域のレーザ光に対する非晶質シリコン膜の吸収係数が低いため、非晶質シリコン膜にすべて吸収されない。このため、非晶質シリコン膜の表面反射した光と、非晶質シリコン膜を透過しガラス基板底面で反射した光とが干渉し、処理後の結晶化シリコン膜で、ニュートンリングと呼ばれる、同心円状の縞模様を形成することが知られている(特許文献1を参照)。以下、本明細書において、反射光に起因する上述した同心円状の縞模様を「同心円縞」と呼ぶ。   As a laser light source for laser annealing, in addition to an excimer laser that is a gas laser, a YAG laser that is a solid-state laser has recently been used. In the case of a YAG laser, when the fundamental wave is modulated to the second harmonic (wavelength 532 mm) and this is irradiated onto the amorphous silicon film, the absorption coefficient of the amorphous silicon film with respect to the laser light in that wavelength region is low. Not absorbed by the amorphous silicon film. For this reason, the light reflected from the surface of the amorphous silicon film interferes with the light transmitted through the amorphous silicon film and reflected from the bottom surface of the glass substrate, and the crystallized silicon film after processing is a concentric circle called Newton ring. It is known to form a striped pattern (see Patent Document 1). Hereinafter, in the present specification, the above-mentioned concentric striped pattern caused by reflected light is referred to as “concentric circular stripe”.

特開2002−289524号公報JP 2002-289524 A

これまで、縦縞と呼ばれる、レンズ表面あるいは光路中のダストの影響による光散乱が原因で生じる縞が見えていた段階では、上述した同心円縞は確認できていなかった。しかし、特願2008−000347号において、本出願人によって上記の縦縞を低減する技術が確立された結果、これまで確認できていなかった同心円縞が見えるようになった。   Until now, the above-mentioned concentric fringes have not been confirmed at the stage where the fringes caused by light scattering due to the influence of dust on the lens surface or the optical path, which are called vertical stripes, were visible. However, in Japanese Patent Application No. 2008-0003447, as a result of the establishment of a technique for reducing the above vertical stripes by the present applicant, concentric circle stripes that have not been confirmed so far can be seen.

同心円縞も縦縞と同様、アクティブマトリックス型の液晶ディスプレイや有機ELディスプレイを作製した場合、この縞が画面にそのまま出てしまうという不都合が生じている。特に、有機ELディスプレイでは液晶ディスプレイより縞に対する感度が大きい。なお、エキシマレーザでは、シリコン膜で100%吸収するため、このような問題は発生しない。   Similarly to the vertical stripes, the concentric circle stripes have a disadvantage that the stripes appear on the screen as they are when an active matrix type liquid crystal display or an organic EL display is manufactured. In particular, an organic EL display is more sensitive to fringes than a liquid crystal display. In the excimer laser, such a problem does not occur because the silicon film absorbs 100%.

特許文献1では、同心円縞の対策として、非晶質シリコン膜に対してレーザ光を斜めに照射し、反射光が基板表面で入射光と重ならないようにする技術を開示している。しかし、集光度を得るためにNA(Numerical Aperture)を大きくしたレーザ光を照射した場合、次のような問題が生じる。なお、NAとは開口数のことで対物レンズの性能を示す数値の一つである。NAは、物体から対物レンズに入射する光線の光軸に対する最大角度をθ、物体と対物レンズの間の媒質の屈折率をnとして、NA=n・sinθと表される。   In Patent Document 1, as a countermeasure against concentric circular stripes, a technique is disclosed in which laser light is obliquely applied to an amorphous silicon film so that reflected light does not overlap incident light on the substrate surface. However, when a laser beam with a large NA (Numerical Aperture) is irradiated in order to obtain a light condensing degree, the following problem occurs. NA is one of numerical values indicating the performance of the objective lens by the numerical aperture. NA is expressed as NA = n · sin θ, where θ is the maximum angle with respect to the optical axis of the light beam incident on the objective lens from the object, and n is the refractive index of the medium between the object and the objective lens.

図3において、2aはガラス基板8の底面8aからのレーザ光2の反射光である。NAを大きくした場合、図3に示すように、非晶質シリコン膜9及びガラス基板8に垂直に入射するビームが存在し、これが反射して照射領域で同心円縞を形成する。これを回避するために、レーザ光2をさらに傾けるという方法を採用した場合、干渉を回避することはできそうだが、集光特性(ビームの形状、焦点深度)が変化し、アニール特性を悪化させるため、この方法は得策ではない。   In FIG. 3, 2 a is the reflected light of the laser beam 2 from the bottom surface 8 a of the glass substrate 8. When NA is increased, as shown in FIG. 3, there is a beam perpendicularly incident on the amorphous silicon film 9 and the glass substrate 8, and this is reflected to form concentric circular stripes in the irradiated region. In order to avoid this, when the method of further tilting the laser beam 2 is adopted, interference may be avoided, but the light collection characteristics (beam shape, depth of focus) change, and the annealing characteristics deteriorate. Therefore, this method is not a good idea.

本発明は、上記の課題に鑑みてなされたものであり、アニール特性を悪化させることなく、同心円縞を低減できるレーザアニール用ステージ部材とその製造方法並びにレーザニール方法を提供することを課題とする。   The present invention has been made in view of the above problems, and an object of the present invention is to provide a laser annealing stage member capable of reducing concentric circular stripes without deteriorating annealing characteristics, a manufacturing method thereof, and a laser annealing method. .

本発明者は、同心円縞の要因を鋭意検討した結果、ガラス基板とこれを載せるステージ部材との間にできる空気層の存在が同心円縞の要因となっていることを突き止めた。すなわち、ガラス基板の底面で反射する光とステージ部材の表面で反射する光が空気層の厚み分で波長の整数倍の光路差になるために光の干渉を生じ、同心円縞が形成されることがわかった。
この同心円縞は、ニュートン縞あるいはニュートンリングと呼ばれるものであり、タッチパネルなどにおいても同様の問題が指摘され、特開2003−75610号公報や特開2002−373056号公報にそのニュートンリングを低減するための方法が提案されている。本発明は、これらの方法を応用したものである。
As a result of intensive studies on the factors of concentric circular stripes, the present inventor has found that the presence of an air layer formed between the glass substrate and the stage member on which the glass substrate is placed is a factor of the concentric circular stripes. That is, the light reflected from the bottom surface of the glass substrate and the light reflected from the surface of the stage member have an optical path difference that is an integral multiple of the wavelength corresponding to the thickness of the air layer, causing light interference and forming concentric circular stripes. I understood.
This concentric circle stripe is called a Newton stripe or Newton ring, and the same problem is pointed out in a touch panel or the like. In order to reduce the Newton ring in Japanese Patent Laid-Open Nos. 2003-75610 and 2002-373056 A method has been proposed. The present invention is an application of these methods.

すなわち、本発明のレーザアニール用ステージ部材とその製造方法並びにレーザニール方法は、以下の技術的手段を採用する。
(1)本発明のレーザアニール用ステージ部材は、被処理体の表面に対してレーザ照射による処理をする際に該被処理体を載せるためのレーザアニール用ステージ部材であって、前記被処理体を載せる上面を有し、該上面は表面粗さを粗くする処理が施されている、ことを特徴とする。
That is, the laser annealing stage member, the manufacturing method thereof, and the laser annealing method employ the following technical means.
(1) The stage member for laser annealing of the present invention is a stage member for laser annealing for placing the object to be processed when processing the surface of the object to be processed by laser irradiation. The upper surface is subjected to a treatment for increasing the surface roughness.

上記の本発明の構成によれば、被処理体を載せるステージ部材の上面の表面粗さが粗く形成されているので、ステージ部材に到達したレーザ光は、その粗い上面で拡散させられる。これにより、ステージ部材上面で反射した光と、被処理体である基板底面で反射した光との干渉が低減されるので、反射光に起因する同心円縞を低減できる。また、この方法によれば、NAが大きい場合でもレーザ光を大きく傾けることなく同心円縞を低減できるので、アニール特性を悪化させることもない。   According to the configuration of the present invention described above, the surface roughness of the upper surface of the stage member on which the object to be processed is placed is formed so that the laser light reaching the stage member is diffused on the rough upper surface. Thereby, since interference between the light reflected on the upper surface of the stage member and the light reflected on the bottom surface of the substrate, which is the object to be processed, is reduced, concentric circular stripes caused by the reflected light can be reduced. Further, according to this method, even when NA is large, concentric fringes can be reduced without greatly tilting the laser beam, so that the annealing characteristics are not deteriorated.

(2)上記のレーザアニール用ステージ部材において、前記上面の表面粗さは、Raで0.1μm以上であるのが良い。 (2) In the stage member for laser annealing described above, the surface roughness of the upper surface is preferably 0.1 μm or more in terms of Ra.

このように、ステージ部材の上面の表面粗さをRaで0.1μm以上に設定することにより、ステージ部材の上面でのレーザ光の反射の拡散効果を高めることができる。   Thus, by setting the surface roughness of the upper surface of the stage member to 0.1 μm or more in Ra, the diffusion effect of the reflection of the laser beam on the upper surface of the stage member can be enhanced.

(3)上記のレーザアニール用ステージ部材は、好ましくは石英ガラスからなる。 (3) The laser annealing stage member is preferably made of quartz glass.

石英ガラスは、非晶質シリコン膜を透過しやすい可視光レーザに対する反射率が低いので、ステージ部材の上面でのレーザ光の反射を低減し、同心円縞の低減効果をより高めることができる。   Since quartz glass has a low reflectivity with respect to a visible light laser that easily transmits through an amorphous silicon film, reflection of laser light on the upper surface of the stage member can be reduced, and the effect of reducing concentric circular stripes can be further enhanced.

(4)本発明は、被処理体の表面に対してレーザ照射による処理をする際に該被処理体を載せるためのレーザアニール用ステージ部材の製造方法であって、前記レーザアニール用ステージ部材となるべきワークを用意する工程と、該ワークの、前記上面となる部分に対して表面粗さを粗くする処理を施す工程と、を含むことを特徴とする。 (4) The present invention relates to a method for manufacturing a laser annealing stage member for placing the object to be processed when the surface of the object to be processed is processed by laser irradiation. The method includes a step of preparing a workpiece to be formed, and a step of performing a process of roughening a surface roughness on a portion of the workpiece that becomes the upper surface.

上記の本発明の方法によれば、ステージ部材上面で反射した光と、基板底面で反射した光との干渉が低減されるので、反射光に起因する同心円縞を低減できる。   According to the method of the present invention described above, interference between the light reflected on the upper surface of the stage member and the light reflected on the bottom surface of the substrate is reduced, so that concentric fringes caused by the reflected light can be reduced.

(5)上記のレーザアニール用ステージ部材の製造方法において、前記表面粗さを粗くする処理は、サンドブラスト処理、フッ酸処理又は機械研磨である。 (5) In the laser annealing stage member manufacturing method, the surface roughness is increased by sandblasting, hydrofluoric acid, or mechanical polishing.

これらの処理により、表面粗さを容易に粗くすることができる。   By these treatments, the surface roughness can be easily roughened.

(6)また本発明は、被処理体の表面に対してレーザ照射による処理をするレーザアニール方法であって、表面粗さを粗くする処理が施された上面を有するレーザアニール用ステージ部材の前記上面に前記被処理体を載せて、被処理体の表面にレーザ光を照射する、ことを特徴とする。 (6) Further, the present invention is a laser annealing method for performing processing by laser irradiation on the surface of an object to be processed, the laser annealing stage member having an upper surface subjected to processing for roughening the surface roughness. The object to be processed is placed on an upper surface, and the surface of the object to be processed is irradiated with laser light.

本発明によれば、アニール特性を悪化させることなく、同心円縞を低減できる。   According to the present invention, concentric circular stripes can be reduced without deteriorating the annealing characteristics.

以下、本発明の好ましい実施形態を添付図面に基づいて詳細に説明する。なお、各図において共通する部分には同一の符号を付し、重複した説明を省略する。   Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, the same code | symbol is attached | subjected to the common part in each figure, and the overlapping description is abbreviate | omitted.

図1は、本発明の実施形態にかかるレーザアニール用ステージ部材11を備えたレーザアニール装置1の概略構成を示す図である。レーザアニール装置1は、その基本構成要素として、レーザ光2を出射するレーザ光源3と、レーザ光源3からのレーザ光2を整形するビーム整形光学系4と、レーザ光2を被処理体7の方向に反射するミラー5と、ミラー5からのレーザ光2を被処理体7の表面に集光する集光レンズ6と、被処理体7を載せるステージ装置10とを備える。   FIG. 1 is a diagram showing a schematic configuration of a laser annealing apparatus 1 including a laser annealing stage member 11 according to an embodiment of the present invention. The laser annealing apparatus 1 has, as its basic components, a laser light source 3 that emits laser light 2, a beam shaping optical system 4 that shapes the laser light 2 from the laser light source 3, and the laser light 2 that is to be processed by the object 7. A mirror 5 that reflects in the direction, a condenser lens 6 that condenses the laser beam 2 from the mirror 5 on the surface of the object 7 to be processed, and a stage device 10 on which the object 7 to be processed is placed.

ここで、図2に示すように、レーザアニールの処理対象である被処理体7は、レーザ光2に対して透明な材料からなる基板8(例えばガラス基板)と、基板8の表面に形成された非晶質半導体膜9からなる。非晶質半導体膜9は、例えば非晶質シリコン膜である。   Here, as shown in FIG. 2, the object 7 to be processed by laser annealing is formed on a substrate 8 (for example, a glass substrate) made of a material transparent to the laser light 2 and on the surface of the substrate 8. The amorphous semiconductor film 9 is formed. The amorphous semiconductor film 9 is an amorphous silicon film, for example.

上記のレーザ光源3は、非晶質半導体膜9に照射した際に非晶質半導体膜9に完全に吸収されない波長をもつレーザ光2を出射するものであり、例えば、YAGレーザ、YLFレーザ、YVOレーザ、ガラスレーザの基本波を非線形光学結晶などの波長変換素子を用いて第2又は第3高調波に変調したレーザ光を出射するものであってよい。またレーザ光2は、パルス光、連続光のいずれであってもよい。 The laser light source 3 emits a laser beam 2 having a wavelength that is not completely absorbed by the amorphous semiconductor film 9 when the amorphous semiconductor film 9 is irradiated. For example, a YAG laser, a YLF laser, A laser beam obtained by modulating a fundamental wave of a YVO 4 laser or glass laser into a second or third harmonic using a wavelength conversion element such as a nonlinear optical crystal may be emitted. The laser beam 2 may be either pulsed light or continuous light.

ビーム整形光学系4は、レーザ光2を被処理体7の表面において所定のビーム形状となるように整形するものである。所定のビーム形状は、例えば、円形や四角形のスポット状とすることができるが、図中X方向に細長い線状ビームに整形してこれを被処理体7に対して相対的にY方向に走査することで大面積の被処理体7を効率よく処理できる。ビーム整形光学系4は、所定のビーム形状となるようにビームエキスパンダ、ホモジナイザ等を構成要素として含むことが可能である。   The beam shaping optical system 4 shapes the laser light 2 so as to have a predetermined beam shape on the surface of the object 7 to be processed. The predetermined beam shape may be, for example, a circular or quadrangular spot shape, but is shaped into a linear beam that is elongated in the X direction in the figure and is scanned in the Y direction relative to the object 7 to be processed. By doing so, the large-scale object 7 can be processed efficiently. The beam shaping optical system 4 can include a beam expander, a homogenizer, and the like as components so as to have a predetermined beam shape.

ステージ装置10は、被処理体7を載せるレーザアニール用ステージ部材11と、レーザアニール用ステージ部材11を二次元的に移動させることが可能なステージ移動装置12とを備える。以下、レーザアニール用ステージ部材11を単に「ステージ部材11」と呼称する。   The stage apparatus 10 includes a laser annealing stage member 11 on which the workpiece 7 is placed and a stage moving apparatus 12 capable of moving the laser annealing stage member 11 two-dimensionally. Hereinafter, the stage member 11 for laser annealing is simply referred to as “stage member 11”.

ステージ部材11は、被処理体7の表面に対してレーザ照射による処理をする際に被処理体7を載せるための部材である。このステージ部材11は、被処理体7を載せるための上面11aを有している。   The stage member 11 is a member for placing the object to be processed 7 when processing the surface of the object 7 to be processed by laser irradiation. The stage member 11 has an upper surface 11a on which the object 7 is placed.

ステージ移動装置12は、ステージ部材11をY方向に移動させることで、例えば線状ビームに整形したレーザ光2を被処理体7に対して相対的にY方向に走査することができる。また、線状ビームのX方向の長さより大きい被処理体7を処理する場合、Y方向に線状ビームを走査して1列目の処理が完了したら、ステージ部材11をX方向に移動させ、被処理体7に対する線状ビームの照射位置をX方向にずらし2列目以降の処理を行うことで被処理体7の全面を処理することができる。   The stage moving device 12 can scan the laser light 2 shaped into, for example, a linear beam in the Y direction relative to the object 7 by moving the stage member 11 in the Y direction. Further, when processing the object 7 to be processed which is longer than the length of the linear beam in the X direction, when the linear beam is scanned in the Y direction and the first column processing is completed, the stage member 11 is moved in the X direction, The entire surface of the object to be processed 7 can be processed by shifting the irradiation position of the linear beam to the object to be processed 7 in the X direction and performing the second and subsequent rows.

図2は、ステージ部材11の上面11aに被処理体7を載せた状態の模式図である。ステージ部材11の上面11aと基板8の底面は、ともに平面となるように製作されるものの、製作精度の限界から実際には図2に示すように、ステージ部材11の上面11aと基板8の底面8aの間には空気層(隙間)13が形成される。   FIG. 2 is a schematic view of a state in which the workpiece 7 is placed on the upper surface 11 a of the stage member 11. Although the upper surface 11a of the stage member 11 and the bottom surface of the substrate 8 are both made to be flat, in reality, as shown in FIG. An air layer (gap) 13 is formed between 8a.

このため、従来のステージ部材を用いてレーザアニールをした場合、ガラス基板8の底面で反射する光とステージ部材の表面で反射する光が空気層13の厚み分で波長の整数倍の光路差になるために光の干渉を生じ、処理された半導体膜に同心円縞が形成されていた。   Therefore, when laser annealing is performed using a conventional stage member, the light reflected on the bottom surface of the glass substrate 8 and the light reflected on the surface of the stage member have an optical path difference that is an integral multiple of the wavelength by the thickness of the air layer 13. As a result, light interference occurs, and concentric stripes are formed in the processed semiconductor film.

このような問題を解決するため、本発明のステージ部材11では、被処理体7を載せる上面11aは、表面粗さを粗くする処理が施されているものである。
また、本発明のステージ部材11の製造方法は、ステージ部材11となるべきワークを用意する工程と、このワークの、被処理体7を載せる上面11aとなる部分に対して表面粗さを粗くする処理を施す工程とを含むものである。
また本発明のレーザアニール方法は、表面粗さを粗くする処理が施されたステージ部材11の上面11aに被処理体7を載せて、被処理体7の表面(非晶質半導体膜9)にレーザ光2を照射するというものである。
In order to solve such a problem, in the stage member 11 of the present invention, the upper surface 11a on which the object to be processed 7 is placed is subjected to a process for increasing the surface roughness.
Moreover, the manufacturing method of the stage member 11 of this invention roughens surface roughness with respect to the process of preparing the workpiece | work which should become the stage member 11, and the part used as the upper surface 11a which mounts the to-be-processed body 7 of this workpiece | work. And a process of applying a treatment.
Further, in the laser annealing method of the present invention, the object to be processed 7 is placed on the upper surface 11a of the stage member 11 that has been processed to increase the surface roughness, and the surface of the object to be processed 7 (amorphous semiconductor film 9). The laser light 2 is irradiated.

上記の本発明によれば、被処理体7を載せるステージ部材11の上面11aの表面粗さが粗く形成されているので、ステージ部材11に到達したレーザ光2は、その粗い上面11aで拡散させられる。これにより、ステージ部材11の上面11aで反射した光と、基板8の底面で反射した光2aとの干渉が低減されるので、反射光に起因する同心円縞(ニュートンリング)を低減できる。また、本発明によれば、NAが大きい場合でもレーザ光2を大きく傾けることなく同心円縞を低減できるので、アニール特性を悪化させることもない。   According to the present invention described above, since the surface roughness of the upper surface 11a of the stage member 11 on which the object 7 is placed is rough, the laser beam 2 that has reached the stage member 11 is diffused by the rough upper surface 11a. It is done. Thereby, since interference between the light reflected by the upper surface 11a of the stage member 11 and the light 2a reflected by the bottom surface of the substrate 8 is reduced, concentric circular stripes (Newton rings) caused by the reflected light can be reduced. Further, according to the present invention, even when NA is large, concentric fringes can be reduced without greatly tilting the laser beam 2, so that the annealing characteristics are not deteriorated.

表面粗さを粗くする処理として、サンドブラスト処理、フッ酸処理、機械研磨などが適用でき、これらの処理により表面粗さを容易に粗くすることができる。
また、ステージ部材11の上面11aの表面粗さは、表面が白濁する程度であるのが望ましく、例えば、Raで0.1μm以上であるのがよい。このような表面粗さに設定することにより、ステージ部材11の上面11aでのレーザ光2の反射の拡散効果を高めることができる。
As a process for roughening the surface roughness, sandblasting, hydrofluoric acid, mechanical polishing, or the like can be applied, and the surface roughness can be easily roughened by these processes.
Further, the surface roughness of the upper surface 11a of the stage member 11 is desirably such that the surface becomes clouded, and for example, Ra should be 0.1 μm or more. By setting such surface roughness, the diffusion effect of the reflection of the laser light 2 on the upper surface 11a of the stage member 11 can be enhanced.

ステージ部材11の材質は特に限定されず、例えば金属製でもよいが、石英ガラス製であるのがよい。石英ガラスは、非晶質シリコン膜を透過しやすい可視光レーザに対する反射率が低いので、ステージ部材11の上面11aでのレーザ光2の反射を低減し、同心円縞の低減効果をより高めることができる。   The material of the stage member 11 is not particularly limited, and may be made of metal, for example, but is preferably made of quartz glass. Since quartz glass has a low reflectivity with respect to a visible light laser that easily transmits through an amorphous silicon film, the reflection of the laser beam 2 on the upper surface 11a of the stage member 11 can be reduced, and the concentric fringe reduction effect can be further enhanced. it can.

なお、上記において、本発明の実施形態について説明を行ったが、上記に開示された本発明の実施の形態は、あくまで例示であって、本発明の範囲はこれら発明の実施の形態に限定されない。本発明の範囲は、特許請求の範囲の記載によって示され、さらに特許請求の範囲の記載と均等の意味および範囲内でのすべての変更を含むものである。   Although the embodiments of the present invention have been described above, the embodiments of the present invention disclosed above are merely examples, and the scope of the present invention is not limited to these embodiments. . The scope of the present invention is indicated by the description of the scope of claims, and further includes meanings equivalent to the description of the scope of claims and all modifications within the scope.

本発明の実施形態にかかるレーザアニール用ステージ部材を備えたレーザアニール装置の概略構成を示す図である。It is a figure which shows schematic structure of the laser annealing apparatus provided with the stage member for laser annealing concerning embodiment of this invention. 図1に示したステージ部材の上面に被処理体を載せた状態の模式図である。It is a schematic diagram of the state which mounted the to-be-processed object on the upper surface of the stage member shown in FIG. 従来技術の問題を説明する図である。It is a figure explaining the problem of a prior art.

符号の説明Explanation of symbols

1 レーザアニール装置
2 レーザ光
3 レーザ光源
4 ビーム整形光学系
5 ミラー
6 集光レンズ
7 被処理体
8 基板
8a 底面
9 非晶質半導体膜
10 ステージ装置
11 レーザアニール用ステージ部材
11a 上面
13 空気層(隙間)
DESCRIPTION OF SYMBOLS 1 Laser annealing apparatus 2 Laser beam 3 Laser light source 4 Beam shaping optical system 5 Mirror 6 Condensing lens 7 To-be-processed object 8 Substrate 8a Bottom surface 9 Amorphous semiconductor film 10 Stage apparatus 11 Laser annealing stage member 11a Upper surface 13 Air layer ( Gap)

Claims (6)

被処理体の表面に対してレーザ照射による処理をする際に該被処理体を載せるためのレーザアニール用ステージ部材であって、
前記被処理体を載せる上面を有し、該上面は表面粗さを粗くする処理が施されている、ことを特徴とするレーザアニール用ステージ部材。
A stage member for laser annealing for placing the object to be processed when processing the surface of the object to be processed by laser irradiation,
A stage member for laser annealing, comprising: an upper surface on which the object to be processed is placed, wherein the upper surface is subjected to a treatment for increasing the surface roughness.
前記上面の表面粗さは、Raで0.1μm以上である、請求項1記載のレーザアニール用ステージ部材。   The stage member for laser annealing according to claim 1, wherein the surface roughness of the upper surface is 0.1 μm or more in Ra. 石英ガラスからなる請求項1又は2記載のレーザアニール用ステージ部材。   3. The stage member for laser annealing according to claim 1, wherein the stage member is made of quartz glass. 被処理体の表面に対してレーザ照射による処理をする際に該被処理体を載せるためのレーザアニール用ステージ部材の製造方法であって、
前記レーザアニール用ステージ部材となるべきワークを用意する工程と、
該ワークの、前記上面となる部分に対して表面粗さを粗くする処理を施す工程と、を含むことを特徴とするレーザアニール用ステージ部材の製造方法。
A method for manufacturing a stage member for laser annealing for mounting a target object when processing the surface of the target object by laser irradiation,
Preparing a workpiece to be the laser annealing stage member;
And a step of roughening the surface roughness of the part to be the upper surface of the workpiece. A method for manufacturing a stage member for laser annealing, comprising:
前記表面粗さを粗くする処理は、サンドブラスト処理、フッ酸処理又は機械研磨である、請求項4記載のレーザアニール用ステージ部材の製造方法。   The method for producing a stage member for laser annealing according to claim 4, wherein the treatment for roughening the surface roughness is sandblast treatment, hydrofluoric acid treatment or mechanical polishing. 被処理体の表面に対してレーザ照射による処理をするレーザアニール方法であって、
表面粗さを粗くする処理が施された上面を有するレーザアニール用ステージ部材の前記上面に前記被処理体を載せて、該被処理体の表面にレーザ光を照射する、ことを特徴とするレーザアニール方法。
A laser annealing method for performing processing by laser irradiation on the surface of an object to be processed,
A laser characterized in that the object to be processed is placed on the upper surface of a stage member for laser annealing having an upper surface that has been processed to increase the surface roughness, and the surface of the object to be processed is irradiated with laser light. Annealing method.
JP2008207566A 2008-08-12 2008-08-12 Stage member for laser annealing, method of manufacturing the same, and laser annealing method Pending JP2010045146A (en)

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JP2005079312A (en) * 2003-08-29 2005-03-24 Mitsubishi Electric Corp Manufacturing method of semiconductor device, semiconductor manufacturing apparatus used therefor and liquid crystal display manufactured
JP2005085817A (en) * 2003-09-04 2005-03-31 Mitsubishi Electric Corp Thin film semiconductor device and its manufacturing method
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