JP2010040921A - Application device, application method, application/development device, and storage medium - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an application device for forming an application film with an excelling film thickness profile. <P>SOLUTION: This application device carries out spin coating for adjusting a film thickness profile of an application film by the number of rotations of a board in applying an application liquid. The application device include: a temperature measuring means to measure the temperature of the board held to a board holding part; a calculation part calculating the number of rotations for adjusting the film thickness profile of the application film for the succeeding board based on a temperature measurement value measured by a first temperature measurement means before an application process for one board, a temperature measurement value measured by the temperature measurement means before the application process for the succeeding board subjected to the application process next after the one board, the number of rotations for adjusting the film thickness profile of the application film in the application process carried out for the one board, and predetermined constant; and thereby the influence of the temperature on the film thickness profile is suppressed. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a coating apparatus, a coating method, a coating, a developing apparatus, and a storage medium for forming a coating film by supplying a coating liquid such as a resist to a substrate such as a semiconductor wafer or an LCD substrate (glass substrate for liquid crystal display). About.

  In the manufacturing process of semiconductor devices and LCDs, various coating films such as an antireflection film and a resist film are formed by sequentially coating a substrate with a coating liquid. Each coating solution is applied by spin coating, for example. In this method, a substrate is sucked and held horizontally by a rotatable spin chuck, and a coating liquid for forming a desired film is supplied from a nozzle above the center of the substrate to the center of rotation of the substrate and the spin chuck is rotated. The coating liquid is diffused by centrifugal force, and a coating film is formed on the entire substrate.

  In this spin coating, for example, when supplying the coating liquid, the substrate is rotated at a predetermined rotation speed (first rotation speed) at the time of application, and after the supply of the coating liquid is stopped, the substrate is moved to the peripheral edge side by centrifugal force. For the purpose of improving the film thickness profile by leveling the coating solution that is close to each other, that is, for the purpose of forming a coating film having a highly uniform film thickness within the surface of the substrate, In some cases, the speed is reduced to a low level of the coating liquid leveling speed (second speed). After the deceleration, the number of rotations of the substrate is increased to the number of rotations during drying (third number of rotations), and drying of the coating liquid is promoted to form a coating film. The rotational speed at the time of drying is set lower than the rotational speed at the time of application in order to suppress scattering of the coating liquid more than necessary.

  In a coating / developing apparatus that performs processing on, for example, a semiconductor wafer (hereinafter referred to as a wafer) as a substrate, the coating module is a coating apparatus that forms a coating film such as a resist film by spin coating, and the resist film is developed. In addition to the development module to be performed, a wafer temperature adjustment module may be provided. In this case, each wafer is transferred to the temperature adjustment module before being transferred to the coating module, and the temperature of the wafer is adjusted to a predetermined temperature. The wafer whose temperature has been adjusted is transported onto a cup provided in the coating module for suppressing scattering of the coating liquid, and is carried into the cup through an opening formed on the upper side of the cup. And it passes to the said spin chuck provided in the said cup, and a coating film is formed by said spin coating.

  In this way, by controlling the temperature in the surface of each wafer to be constant by the temperature adjustment module before transporting onto the cup, variations in the film thickness of the coating film occur between the wafer surface and between the wafers. This prevents the stay from falling. That is, the temperature adjustment module is provided in the coating and developing apparatus for the purpose of uniforming the coating performance of the coating module.

  By the way, in the coating and developing apparatus, wafers in the same lot or wafers in a plurality of lots are continuously conveyed and processed in order to improve throughput. Is done. However, when the wafer coating process proceeds continuously in the coating module, the solvent such as thinner contained in the coating solution supplied to the wafer volatilizes. In addition, when a solvent is supplied to increase the wettability of the coating solution on the wafer before the coating solution is applied, the solvent also volatilizes, and as a result, the concentration of the volatilized solvent in the cup and on the cup gradually increases. . Further, when the wafer coating process proceeds continuously, the amount of heat generated by a rotary motor or the like included in the drive unit for rotating the spin chuck increases.

  Thus, due to changes in the solvent concentration around the cup and the amount of heat generated by the rotary motor, the temperature around the cup fluctuates with time, and the temperature may vary from wafer to wafer transferred into the cup. . Specifically, the relationship between the wafer temperature and the coating film thickness when spin coating is performed with the rotational speed varied as described above will be described with reference to FIG. In the figure, 11 is a spin chuck, and 12 is a coating nozzle. When the wafer W is rotated at the coating rotation speed (FIG. 15A), the higher the temperature of the wafer W is compared with the set temperature adjusted by the temperature adjustment module, the faster the solvent evaporates. As a result of the decrease in the fluidity of the coating liquid L, the coating liquid L that is close to the peripheral edge of the wafer W is less likely to be leveled even at the level of the coating liquid leveling. Accordingly, as shown in FIG. 15B, the film thickness of the coating film M at the peripheral edge of the wafer W becomes larger than the film thickness at the central part, and as a result, the film thickness profile of the coating film (uniform in-plane thickness). Sex) will vary. Further, when the wafer W is rotated at the rotational speed during drying, the solvent volatilization proceeds faster as the temperature of the wafer W becomes higher than the set temperature, and the average film thickness (of the substrate having a film thickness) formed on the wafer W increases. (Average value in the plane) increases.

  When a phenomenon in which the temperature around the cup increases with time in this way, dummy wafers that are not used for the purpose of manufacturing a semiconductor device are sequentially transferred to the coating module, and the dummy wafers are processed. Then, after the temperature of the dummy wafer transferred onto the cup is stabilized, it is conceivable to take measures to transfer a normal wafer to the coating module. However, this method has a problem that a time during which a normal wafer cannot be processed is generated, resulting in a decrease in throughput, and a cost of the dummy wafer and a cost for processing it. By the way, the case where the temperature of the wafer is higher than the expected temperature at the time of forming the coating film has been described. However, even when the temperature is lower than the predetermined temperature, the variation in the film thickness profile becomes large, and the coating is performed. Even when the temperature of the wafer is lower than the expected temperature during liquid drying, the average film thickness varies between wafers.

Patent Document 1 describes a coating apparatus that controls the film thickness of a coating film by controlling the number of rotations of the substrate. However, the above problem is not described, and the problem cannot be solved.
JP 2002-141273 (paragraph 0035 to paragraph 0038, etc.)

  The present invention has been made under such circumstances, and an object thereof is a coating apparatus, a coating method, and a coating and developing apparatus including the coating apparatus, which can form a coating film having a good film thickness profile. And a storage medium comprising a program for executing the coating method.

The coating apparatus of the present invention adjusts the film thickness profile of the coating film according to the number of rotations of the substrate at the time of coating the coating liquid, and then adjusts the average film thickness of the coating film by rotating at a rotation speed lower than the rotation speed. In a coating apparatus that performs spin coating,
A substrate holding unit configured to hold the substrate horizontally and rotate about a vertical axis by a rotation mechanism;
First temperature measuring means for measuring the temperature of the substrate held by the substrate holding unit;
The temperature measurement value measured by the first temperature measuring unit before the coating process for one substrate and the first temperature before the coating process for a subsequent substrate that performs the coating process after the one substrate. Based on the temperature measurement value measured by the measurement means, the number of rotations for adjusting the film thickness profile of the coating film in the coating process performed on the one substrate, and a predetermined constant, the subsequent constants The substrate includes a calculation unit that calculates the number of rotations for adjusting the film thickness profile of the coating film.

The coating apparatus includes a second temperature measuring unit that measures the temperature of the substrate held by the substrate holding unit,
The calculation unit calculates the temperature measurement value measured by the second temperature measurement unit before the coating process for one substrate, and the subsequent substrate that performs the coating process next to the one substrate before the coating process. The temperature measurement value measured by the second temperature measurement means, the number of rotations for adjusting the average film thickness of the coating film in the coating process performed on the one substrate, and a predetermined constant Based on this, the subsequent substrate may be provided with a function of calculating the number of rotations for adjusting the average film thickness of the coating film.

  In this case, for example, the calculation unit calculates a temperature difference between the temperature measurement value of one substrate measured by the second temperature measurement unit and the temperature measurement value of the subsequent substrate measured by the second temperature measurement unit. The rotation number for calculating and adjusting the average film thickness of the coating film on the subsequent substrate based on the temperature difference and the constant, and the rotation number for adjusting the average film thickness of the coating film on one substrate In this case, the second temperature measuring means may measure the temperature of the central portion of the substrate.

  For example, the calculation unit calculates a temperature difference between a temperature measurement value of one substrate measured by the first temperature measurement unit and a temperature measurement value of a subsequent substrate measured by the first temperature measurement unit. The difference between the rotational speed for adjusting the film thickness profile of the coating film on the subsequent substrate and the rotational speed for adjusting the film thickness profile of the coating film on one substrate based on the temperature difference and the constant Is calculated. The first temperature measuring means may measure the temperature of the peripheral edge of the substrate.

In the coating method of the present invention, the film thickness profile of the coating film is adjusted by the number of rotations of the substrate at the time of coating the coating liquid, and thereafter the average film thickness of the coating film is adjusted by rotating at a number of rotations lower than the number of rotations. In the application method for spin coating,
A step of holding one substrate horizontally in the substrate holder and rotating it around a vertical axis;
Supplying a coating solution to the one substrate to perform spin coating;
A step of measuring the temperature of the one substrate held by the substrate holding unit by the first temperature measuring means before supplying the coating liquid;
A step of horizontally holding the subsequent substrate to be coated next to the one substrate on the substrate holding portion and rotating it around a vertical axis;
Supplying a coating solution to the subsequent substrate to perform spin coating;
Measuring the temperature of the subsequent substrate held by the substrate holding unit by first temperature measuring means before supplying the coating liquid;
A temperature measurement value for one substrate measured by the first temperature measurement means, a temperature measurement value for a subsequent substrate measured by the first temperature measurement means, and a measurement for the one substrate. Based on a rotation speed for adjusting the film thickness profile of the coating film in the coating process and a predetermined constant, the rotation speed for adjusting the film thickness profile of the coating film is calculated for the subsequent substrate. Process,
It is provided with.

The coating method of the present invention includes a step of measuring the temperature by the second temperature measuring means before supplying the coating liquid with respect to the one substrate held by the substrate holding unit,
Measuring the temperature of the subsequent substrate held by the substrate holding unit by the second temperature measuring means before supplying the coating liquid;
A temperature measurement value for one substrate measured by the second temperature measurement means, a temperature measurement value for a subsequent substrate measured by the second temperature measurement means, and the one substrate. Based on the number of rotations for adjusting the film thickness profile of the coating film in the coating process and a predetermined constant, the number of rotations for adjusting the average film thickness of the coating film is calculated for the subsequent substrate. Process,
It is provided with.

In the step of calculating the number of rotations for adjusting the average film thickness of the coating film on the subsequent substrate,
Calculating a temperature difference between a temperature measurement value of one substrate measured by the second temperature measurement means and a temperature measurement value of a subsequent substrate;
Based on the temperature difference and the constant, the difference between the number of rotations for adjusting the average film thickness of the coating film on the subsequent substrate and the number of rotations for adjusting the average film thickness of the coating film on one substrate is A process of calculating;
May be included.

In that case, for example, in the step of calculating the rotation number for adjusting the rotation number for adjusting the film thickness profile of the coating film on the subsequent substrate,
Calculating a temperature difference between a temperature measurement value of one substrate measured by the first temperature measurement means and a temperature measurement value of a subsequent substrate;
Based on the temperature difference and the constant, the difference between the number of rotations for adjusting the film thickness profile of the coating film on the subsequent substrate and the number of rotations for adjusting the film thickness profile of the coating film on one substrate is A process of calculating;
May be included.

The coating and developing apparatus of the present invention is
A carrier block into which a carrier containing a substrate is carried;
A processing block including a coating unit that applies a resist to the surface of the substrate taken out of the carrier, and a developing unit that develops the exposed substrate.
In an application / development apparatus comprising an interface block that transfers a substrate between the processing block and an exposure apparatus that exposes a resist-coated substrate,
Any one of the above-described coating apparatuses is provided as the coating unit.

The storage medium of the present invention is a storage medium for storing a computer program used in a coating apparatus for forming a coating film by supplying a coating liquid to a rotating substrate,
The computer program includes a group of steps for carrying out the coating method.

  According to the coating apparatus of the present invention, the temperature measuring means for measuring the temperature of each of the one substrate and the subsequent substrate is provided, and these measurement temperatures and the film of the coating film in the coating process performed on the one substrate are provided. Based on the number of rotations for adjusting the thickness profile and a predetermined constant, the number of rotations for adjusting the film thickness profile of the coating film is calculated for the subsequent substrate. Accordingly, it is possible to suppress an increase in the variation in the film thickness profile of the coating film on the subsequent substrate due to a change in the temperature of the atmosphere in which the substrate is processed.

  As a coating apparatus according to an embodiment of the present invention, a resist coating apparatus 2 will be described with reference to FIGS. 1 and 2 respectively show a longitudinal plane and a transverse plane of the apparatus. In FIG. 2, reference numeral 20 denotes a housing, and a wafer W loading / unloading port 20A is provided on a surface facing a loading area of a transfer arm as a transfer means. ing. The carry-in / out port 20A is opened and closed by a shutter 20B. A spin chuck 21 serving as a substrate holding unit is provided in the housing 20.

  The spin chuck 21 is configured to hold the wafer W horizontally by vacuum suction, and can be rotated about the vertical by a rotation driving unit 22 that is a rotation mechanism including a rotation motor and can be moved up and down. . A guide ring 23 having a mountain shape in cross section is provided on the lower side of the spin chuck 21, and the outer peripheral edge of the guide ring 23 is bent and extends downward. A cup 24 is provided so as to surround the spin chuck 21 and the guide ring 23 in order to suppress scattering of the resist solution that is a coating solution.

  The cup 24 is formed with an opening larger than the wafer W on the upper surface so that the spin chuck 21 can move up and down, and a gap 25 is formed between the side peripheral surface and the outer peripheral edge of the guide ring 23. Has been. The lower side of the cup 24 forms a curved path together with the outer peripheral edge portion of the guide ring 23 to constitute a gas-liquid separation part. An exhaust port 26 is formed in the inner region of the bottom of the cup 24, and an exhaust pipe 26 </ b> A is connected to the exhaust port 26. Further, a drain port 27 is formed in the outer region of the bottom of the cup 24, and a drain tube 27 </ b> A is connected to the drain port 27.

  The resist coating apparatus 2 includes a resist solution nozzle 31 that is a coating solution nozzle for supplying a resist solution to the center portion of the wafer W surface and a solvent nozzle 41 for supplying a solvent, for example, thinner to the center portion of the wafer W surface. I have. The thinner is supplied to perform a prewetting process for improving the wetting and spreading of the resist solution on the wafer W. The resist solution nozzle 31 is connected to a resist supply source 33 for supplying a resist solution via a resist supply pipe 32. The resist supply pipe 32 is provided with a supply device group 34 including a valve and a flow rate adjusting unit. The solvent nozzle 41 is connected to a solvent supply source 43 that supplies thinner through a solvent supply pipe 42. The solvent supply pipe 42 is provided with a supply device group 44 including a valve, a flow rate adjusting unit and the like.

  The resist solution nozzle 31 is connected to a moving mechanism 36 via an arm 35 extending in the horizontal direction as shown in FIG. The arm 35 extends from a standby area 37 provided on the outer side of one end side (right side in FIG. 2) of the cup 24 toward the other end side along the guide rail 30 provided along the lateral direction by the moving mechanism 36. It is configured so that it can move and move vertically. The solvent nozzle 41 is connected to a moving mechanism 46 through an arm 45 extending in the horizontal direction in the same manner as the resist solution nozzle 31. The arm 45 can be moved toward the one end side from the standby area 47 provided outside the other end side (left side in FIG. 2) of the cup 24 along the guide rail 30 by the moving mechanism 46 and can move in the vertical direction. It is configured as follows.

  On the cup 24, for example, rod-shaped radiation thermometers 51 and 52 as temperature measuring means are provided. The radiation thermometer 51 is provided at a position slightly closer to the center from the peripheral edge of the wafer W placed on the spin chuck 21. The center of the radiation thermometer 51 indicated by L in the drawing and the circumference of the wafer W are provided. The distance from the end is 3 mm, for example. And the radiation thermometer 51 measures the temperature of the peripheral part of the wafer W under it. The radiation thermometer 52 is provided so that the center thereof coincides with the center of the wafer W placed on the spin chuck 21, and measures the temperature of the center portion of the wafer W. An electric signal corresponding to the temperature measured by these radiation thermometers 51 and 52 is transmitted to the control unit 6 described later. As will be described later, the radiation thermometer 51 is provided to determine the rotational speed of the wafer W at the time of resist application, and the radiation thermometer 52 is provided to determine the rotational speed at the time of drying of the wafer W after the resist application. Yes.

  The resist coating apparatus 2 includes a control unit 6 configured by, for example, a computer for controlling a series of operations of the apparatus 2 described later, and a program 61 stored in the control unit 6 stores the rotation driving unit 22 and the supply device. It is configured to control the operation of the groups 34, 44, etc. The program 61 is stored in a storage medium such as a flexible disk (FD), a memory card, a compact disk (CD), a magnetic optical desk (MO), or a hard disk, and is installed in the control unit 6. The installed program 61 is stored in the program storage unit 62 of the control unit 6 and read out, and the following steps are executed.

  FIG. 3 shows the configuration of the control unit 6. In the figure, reference numeral 60 denotes a bus. The bus 60 is connected to the program 61, the CPU 63, the work memory 64, the memory 65, and the input means 66 constituting the control unit 6. Further, the rotation driving unit 22 and the radiation thermometers 51 and 52 of the resist coating apparatus 2 are connected to the bus 60.

  Here, in order to explain the configuration of each part of the control unit 6 in detail, an outline of the processing by the resist coating apparatus 2 will be described. As described in the section of the background art, when applying a resist solution to the wafer W, the resist coating apparatus 2 rotates the wafer W at a predetermined resist coating rotation speed and supplies it to the center of the wafer W. Spin coating is performed to spread the resist solution to the peripheral edge of the wafer W by centrifugal force, and after applying the resist liquid, the resist liquid is smoothed to prevent the film from rising at the peripheral edge of the wafer W. Is rotated at a predetermined number of revolutions of the resist solution. Thereafter, the rotational speed of the spin chuck 21 is increased and the resist liquid is dried at a predetermined resist drying rotational speed to form a resist film.

The solid line graph in FIG. 4 shows an example of the processing of the first wafer W [wafer W ₁ ] among the wafers W continuously transferred to the resist coating apparatus 2, and in this example, the rotation during the resist coating is performed. The number of rotations, the number of rotations of the resist solution, and the number of rotations during resist drying are set to 2000 rpm, 100 rpm, and 1500 rpm, respectively.

  By the way, as described above, the temperature around the cup 24 varies as the coating process continues, and the volatilization rate of the solvent contained in the resist solution supplied for each wafer W varies. Then, when the temperature of the wafer W deviates from a predetermined set temperature when performing the coating process at the resist coating rotation speed, the solvent volatility rate fluctuates, so that the fluidity of the resist solution fluctuates. When the number of rotations is increased, the degree to which the resist solution is leveled in the surface of the wafer W changes, the resist film thickness varies between the peripheral edge and the center of the wafer W, and the profile deteriorates. End up. When the wafer W is rotated at the resist drying speed and the resist drying process is performed, if the temperature of the wafer W deviates from a predetermined set temperature, the volatilization rate of the solvent fluctuates, thereby causing the wafer to change. The average film thickness of the resist film varies every W.

However, the volatilization rate of the solvent in the resist solution depends on the number of rotations of the wafer at each stage of the coating process in addition to the temperature around the cup. Specifically, the rotation of the wafer W is performed during resist coating and resist drying. The higher the number, the lower the volatilization rate of the solvent. Therefore, in this resist coating unit 2 to as wafer W [hereinafter wafer W _{n + 1} of the (n + 1) th conveyed subsequently to the resist coating unit 2 after the wafer W ₁ (n being any integer not less than 1) ], The temperature Tb _{n + 1} (° C.) measured by the radiation thermometer 51 for the wafer W _{n + 1} and the n-th wafer W [hereinafter referred to as wafer W _n ] transferred to the resist coating apparatus 2 immediately before the temperature Tb _{n + 1} (° C.). Similarly, the difference ΔTb _n (° C.) from the temperature Tb _n (° C.) measured by the radiation thermometer 51 is calculated. Then, when performing the coating process on the wafer W _{n + 1} , based on the temperature difference ΔTb _n , in _order to prevent the fluctuation of the solvent volatilization rate due to the temperature difference and to cancel the influence on the in-plane distribution of the coating film. A coating correction rotational speed (offset) ΔY _n (rpm) to be added to the coating rotational speed of the wafer W _n is determined.

The determined correction rotation speed [Delta] Y _n (rpm) and the wafer _W at _n coating rpm _Y n (rpm) and the coating during rotation speed thereof wafer _{W n + 1} based on _Y n + 1 (rpm) is determined, the decision The resist coating process is performed on the wafer W _{n + 1} at the applied rotation speed. In this way, by changing the recipe for the number of rotations during application for each wafer W, the degree of volatilization of the solvent when the wafer W is rotated at the number of rotations during application is made appropriate, and the film thickness profile of the resist is improved. .

In the resist coating unit 2, the Upon processing the wafer W _{n + 1,} and the wafer W _{n + 1} for a radiation thermometer 52 temperature Ta n _{+ 1} is determined by _(° C.), is carried to the resist coating apparatus 2 just before calculates the temperature Ta _n (° C.) which is also measured by the radiation thermometer 52 for the wafer _{W n,} the difference .DELTA.Ta _n of (° C.). Then, based on the temperature difference .DELTA.Ta _n, carrying out the drying process of the wafers W _{n + 1,} in order to prevent fluctuations in the volatilization rate of the solvent due to the temperature difference, when dried to be added to the dry rotation speed of the wafer W _n The correction rotational speed (offset) ΔX _n (rpm) is determined. Then, the rotational speed of the wafer _{W n + 1} of dry rpm _X n + 1 (rpm) has been determined and its determined based on the correction rotation speed [Delta] X _n and wafer _{W n} dry rpm _X n of (rpm) The drying process is performed. In this way, by changing the recipe of the rotational speed for drying for each wafer W, the degree of volatilization of the solvent between the wafers W is made appropriate, and variations in the average film thickness of each resist film are prevented.

Returning to the description of the configuration of the control unit 6, the work memory 64 transmits the temperatures Tb _{1 to} Tb _{n + 1} (° C.) of the respective peripheral portions of the wafers W ₁ to W _{n + 1} transmitted from the radiation thermometer 51 and the radiation temperature. The temperatures Ta _{1 to} Tan _{+ 1} of the respective central portions of the wafers W ₁ to W _{n + 1} transmitted from the total 52 are stored. Further, the above-described various calculations are performed based on these temperatures Tb _{1 to} Tb _{n + 1} and temperatures Ta _{1 to} Tan _{+ 1} . In addition to performing various calculations, the work memory 64 stores calculated values such as temperature differences, application rotation speed, drying rotation speed, and correction rotation speed.

In the memory 65, the correlation coefficient Kb (rpm / ° C.) indicating the relationship between the temperature difference ΔTb _n and the change in the rotational speed for calculating the coating correction rotational speed ΔY _n and the drying correction rotational speed are calculated. for calculating the [Delta] X _n, correlation coefficient Ka showing the relationship between the rotational speed of change between the temperature difference ΔTa _n (rpm / ℃) are stored.

Input means 66 is constituted by a keyboard for example, during application of the wafer W ₁ rpm Y ₁ and dry rotational speed X ₁ of the above first (first sheet) is a user arbitrarily, for example, via the input means setting The set values of the rotation speeds are stored in the work memory 64.

Subsequently, the operation of the resist coating apparatus 2 will be described with reference to FIGS. 4 and 5 to 8 described above. In this example, the correlation coefficients Ka and Kb are each set to 100, and it is assumed that the processing is continuously performed for 25 wafers W in the same lot. FIG. 4 is a graph showing the relationship between the processing time and the rotation speed for the first to third wafers W sequentially transferred to the resist film forming apparatus 2, and FIG. 5 shows the processing for the _first wafer W1. FIG. 6 is a flowchart showing processing steps for subsequent wafers W _{2 to} W ₂₅ . 7 and 8 are process diagrams showing how a resist film is formed on the wafer W. FIG.

First, the user of the apparatus sets the rotation speed Y ₁ during coating and the rotation speed X ₁ during drying on the _first wafer W1 of the lot via the input means 66. Here, it is assumed that the rotation speed Y ₁ during coating and the rotation speed X ₁ during drying are set to 2000 rpm and 1500 rpm, respectively. After setting the number of rotations, for example, the wafer W ₁ whose temperature is adjusted to, for example, 23 ° C. by the temperature adjustment module provided in the previous stage of the resist coating apparatus 2 is transferred to the resist coating apparatus 2 by a transfer mechanism (not shown). (a) the spin chuck 21 as shown in (b) is increased by lowering the back surface side central portion of the wafer W ₁ after holding suction, the wafer W ₁ to the processing position for performing a coating process in cup 24 Transport (step S1).

When the wafer _{W 1} is moved to the processing position, the temperature Tb ₁ of the peripheral portion of the wafer W1 under the radiation thermometer 51 and 52 sensors, the temperature Ta ₁ of the central portion of the wafer _{W 1} respectively measured (step S2) The electrical signal corresponding to the measured value is transmitted to the control unit 6. Then, the temperatures Ta ₁ and Tb ₁ are stored in the work memory 64.

Subsequently, at time t1 when a predetermined time has elapsed since the wafer W moved to the processing position, a control signal is transmitted from the control unit 6 to the rotation driving unit 22, and the spin chuck 21 starts to rotate. There is solvent nozzle 41 with increased moving from the waiting area 47 on the central portion of the wafer W ₁ (FIG. 8 (a)). Then at time t2 for example that has elapsed from the time t1 in the rotational speed increase given time, thinner 40 from the solvent nozzle 41 is supplied to the central portion of the wafer W _1, after being applied to the entire wafer W ₁ by spin coating, the supply of the thinner 40 is stopped, the solvent nozzle 41 is moved from the wafer W ₁ center on the resist solution nozzle 31 is waiting region 37 while moving over the wafer W ₁ center in the waiting area 47 (FIG. 8 (b )), the rotational speed of the wafer _{W 1} reaches the set 2000rpm applied when a rotational speed _{Y 1,} the rotational speed is maintained.

From time t2 at a predetermined time elapsed time t3 resist solution R is supplied onto the center portion of the wafer W ₁ (FIG. 8 (c)), the spread of the wafer W ₁ surface thinner 40 is supplied by spin coating, It is applied to the entire wafer _{W 1} (step S3). Supply of the resist solution R is stopped from time t3 by a predetermined time elapsed time t4, further decreases the rotation speed of the wafer W ₁ at a predetermined time elapsed time t5 from t4, the rotational speed to if the resist solution Is maintained at 100 rpm. Then, it is not much closer resist solution R to the peripheral portion of the wafer W ₁ is flattened in the plane of the wafer W ₁ (FIG. 8 (d)).

Rotational speed of the wafer W ₁ is increased from the time t5 at a predetermined time elapsed time t6, the set drying time rpm X ₁ a is the 1500rpm reaches its rotational speed is maintained, contained in the resist solution R volatilization of the solvent progresses resist film is formed (step S4), and reduces the rotational speed at subsequent time t7 has elapsed from the time t6 a predetermined time, stops the rotation of the Thereafter the wafer W _1, not shown The wafer W ₁ is unloaded from the resist coating apparatus 2 by the transfer mechanism.

Subsequently, the second and subsequent wafers W _{n + 1} (n ≧ 1) are sequentially transferred to the resist coating apparatus 2. Since the wafer W _{n + 1} is subjected to processing in the same manner as the wafer W _1, below, focusing on differences from the process of the wafer W ₁ for the wafer W _{n + 1} processing step is described. When the wafer W _{n + 1} is delivered to the spin chuck 21 (step S5), and the wafer W _{n + 1} is moved to the processing position, the radiation thermometers 51 and 52 have the temperature Tb of the peripheral portion of the wafer W _{n + 1. n + 1} and the temperature Tann _{+ 1} of the central portion of the wafer Wn _{+ 1} are respectively measured (step S6), and an electric signal corresponding to the measured value is transmitted to the control unit 6, and the temperature is transmitted to the work memory 64. Tb _{n + 1} and Ta _{n + 1} are stored.

Control unit 6, the temperature of the peripheral portion of the temperature Tb n _{+ 1} (℃) and wafer W _n which has received the processing immediately before the wafer W _{n + 1} at the device periphery of the stored wafer W _{n + 1} calculates a difference _{Tb n + 1 -Tb n = ΔTb} n and Tb _n (℃) (step S7), and thereafter, .DELTA.Tb _n · Kb by calculating, during coating correction rotation speed is the calculated value ΔY _n (rpm) is obtained (step S8). Thereafter, the control unit 6 adds the corrected rotational speed ΔY _n to Y _n which is the rotational speed when the wafer W _n is applied, and determines the added value as the rotational speed Y _{n + 1} when the wafer W _{n + 1} is applied. And stored in the work memory 64 (step S9).

Subsequently, the control section 6, the central portion of the temperature Ta n _{+ 1} (℃) and wafer W _n which has received the processing immediately before the wafer W _{n + 1} at the device in the center of the stored wafer W _{n + 1} temperature Ta difference between _{n Ta n + 1 -Ta n =} ΔTa n (℃) calculates the (step S10), and thereafter, calculates a .DELTA.Ta _n · Ka, dry correction rotation thereof is computed value The number ΔX _n (rpm) is obtained (step S11). Then determination, the control unit 6, the drying time correction rotation speed [Delta] X _n is added to X _n is a dry rotational speed of the wafer W _n, the sum value as the wafer W _{n + 1} of dry rpm X _{n + 1} Then, it is stored in the work memory 64 (step S12).

Thereafter, the control signal corresponding to the rotation number of the determined to a rotary drive unit 22 from the control unit 6 is transmitted, same processing as the processing performed on the wafer W ₁ at time t1~t7 is performed. However, when applying the resist solution, the wafer W _{n + 1} is rotated at the determined rotation speed Y _{n + 1} at the time of application, and the resist solution is supplied to perform the application process (step S13). In addition, after the rotational speed has decreased to perform the leveling of the resist, when the resist is dried, the rotational speed is increased to the determined rotational speed X _{n + 1} at the time of drying, and the resist drying process is performed (steps). S14).

Specifically, the processing steps for the _second wafer W2 will be described. Second wafer W ₂ is transported to the resist coating unit 2, when it is delivered to the spin chuck 21 is moved to the processing position, the temperature Tb ₂ of the radiation thermometer 51 and 52 the peripheral portion of the wafer W _2, The temperature Ta ₂ at the center of the wafer W ₂ is measured, and an electric signal corresponding to the measured value is transmitted to the control unit 6, and the temperatures Tb ₂ and Ta ₂ are stored in the work memory 64. Tb ₂ and Ta ₂ of the wafer _{W 2} is 23.5 ° C., the Tb ₁ and Ta ₁ of the wafer _{W 1} is described as a 23 ° C., the control unit _{6, ΔTb 1 = Tb 2 -Tb 1} = 23. 5-23 is calculated, and the calculated value of 0.5 (° C.) is multiplied by the value of Kb of 100 (rpm / ° C.), so that the coating correction rotation speed ΔY ₁ is determined to be 50 rpm. Then, the corrected rotational speed is added to the rotational speed 2000 rpm when the wafer W ₁ is applied, and the calculated value 2050 rpm is determined as the rotational speed Y ₂ when the wafer W ₂ is applied, and stored in the work memory 64.

Subsequently, the control unit 6 calculates ΔTa ₁ = Ta ₂ −Ta ₁ = 23.5-23, and the calculated value 0.5 (° C.) and the Ka value 100 (rpm / ° C.). And the dry correction amount ΔX ₁ is determined to be 50 rpm. Then, the correction amount is added to the dry rotation speed 1500 rpm of the wafer W ₁ , and the calculated value 1550 rpm is determined as the dry rotation speed X ₂ of the wafer W ₂ and stored in the work memory 64.

In Figure 4, dashed line shows the relationship between the rotational speed and time above the wafer W _2, at time t1 as shown in this figure, the spin chuck 21 is on the determined applied when the rotation speed 2050rpm Then, after the rotational speed reaches 2050 rpm, the resist solution R is applied at time t2. Resist liquid R is applied after the end of the rotational speed in the same manner as the wafer _{W 1} is not the resist solution R was reduced to 100 rpm, it is accelerated such that the 1550Rpm the rotation speed is determined by thereafter time t6, 1550Rpm Once in is maintained rotation at that rotational speed, the resist solution R of the wafer W ₂ is a resist film and drying are formed. Thereafter, the wafer W ₂ is unloaded from the resist coating apparatus 2.

Next, the processing steps for the _third wafer W3 will be described. If the third wafer W ₃ is moved receiving the passed in the processing position on the spin chuck 21, the temperature Tb 3 of the radiation thermometer 51 and 52 the peripheral portion of the wafer W _3, the temperature of the central portion of the wafer W ₃ Each of Ta ₃ is measured, an electric signal corresponding to each measured value is transmitted to the control unit 6, and the temperature Tb ₃ and Ta ₃ are stored in the work memory 64. Assuming that these temperatures Tb ₃ and Ta ₃ are 23.8 ° C. and 23.9 ° C., respectively, the control unit 6 calculates ΔTb ₂ = Tb ₃ −Tb ₂ = 23.8-23.5, The calculated value of 0.3 (° C.) is multiplied by the value of Kb of 100 (rpm / ° C.) to determine the correction rotation speed ΔY ₂ during coating as 30 rpm. Then, the corrected rotation speed is added to the rotation speed 2050 rpm at the time of application of the wafer W ₂ , and the calculated value 2080 rpm is determined as the rotation speed Y ₃ at the time of application of the wafer W ₃ and stored in the work memory 64.

Subsequently, the control unit 6 calculates ΔTa ₂ = Ta ₃ −Ta ₂ = 23.9-23.5, and the calculated value is 0.4 (° C.) and the value of Ka is 100 (rpm / ° C.). And the coating correction rotational speed ΔX ₂ is determined to be 40 rpm. Then, the corrected rotational speed is added to the drying speed 1550 rpm of the wafer W ₂ , and the calculated value 1590 rpm is determined as the drying speed X ₃ of the wafer W ₃ and stored in the work memory 64.

In Figure 4 by a two-dot chain line shows the relationship between the rotation speed and time of the wafer W _3, at time t1 as shown in the figure, made on rotation speed 2080rpm coating spin chuck 21 that is the determined After the rotation speed is increased to 2080 rpm, the resist solution R is applied at time t2. Further, after the rotational speed is lowered to 100 rpm and the resist solution R is smoothed, the rotational speed is increased to 1590 rpm, and the resist solution R is dried to form a resist film.

Wafer _{W 3} after the processing of each step S5~S14 for the last wafer _{W 25} of the wafer _{W 4} ~ lots are executed, similarly to the wafer _W 2, _{W 3} for each of these wafers _W 4 _{to W-25} Is performed. Further, since the temperatures of the wafers W _{1 to} W ₃ are rising, the value of each correction rotation number is a positive value, but when the temperature decreases between the wafers W, the correction rotation number becomes a negative value. The negative value is added to the rotation speed at the time of application and the rotation speed at the time of drying of the wafer W immediately before that.

  According to this resist coating apparatus 2, for the wafer W transferred from the second wafer onward in the same lot, the temperature of the wafer W measured by the radiation thermometer 51 and the resist coating immediately before the wafer W are measured. The number of rotations during resist coating is determined according to the temperature difference from the temperature of the wafer W transferred to the apparatus 2, and coating processing is performed. Therefore, even if the temperature around the cup 24 changes due to the volatilization of the solvent around the cup 24 or the change in the amount of heat generated by the rotary drive unit 22, even if the temperature changes accordingly for each wafer W transferred, each wafer Since the deterioration of the film thickness profile of the W resist film can be suppressed, a decrease in yield can be suppressed. Further, according to this method, it is not necessary to transfer a dummy wafer and perform processing on the dummy wafer, so that it is possible to prevent the processing time of one lot from becoming long and the throughput from being lowered. In addition, an increase in cost due to the use of the dummy wafer can be prevented.

  Further, according to the resist coating apparatus 2, for the wafer W transferred after the second wafer, the temperature of the wafer W measured by the radiation thermometer 52 and the resist coating apparatus 2 immediately before the wafer W are transferred to the resist coating apparatus 2. The rotational speed at the time of drying the resist is determined according to the temperature difference with the temperature of the transferred wafer W, and the drying process is performed. Accordingly, variation in the average film thickness between the wafers W can be suppressed, so that a decrease in yield can be suppressed.

  By the way, when the temperature of the peripheral portion of the wafer W is particularly high at the time of applying the resist, the resist solution is dried at the peripheral portion, the fluidity of the resist solution is lowered, and the film thickness profile of the resist film is deteriorated. That is, since the temperature of the peripheral portion of the wafer W particularly affects the film thickness profile of the resist film, the radiation thermometer 51 is configured to measure the temperature of the peripheral portion of each wafer W as in the above embodiment. Calculating the temperature difference between the peripheral portions is preferable because a resist film having higher in-plane uniformity can be formed.

  Further, the temperature at the center of the wafer W most affects the average film thickness of the resist film. Therefore, in the above-described embodiment, the center portion of the wafer W is measured by the radiation thermometer 52, and the rotational speed at the time of drying is determined based on the measurement result. Thus, it is preferable to determine the rotational speed at the time of drying based on the temperature of the central portion of the wafer W because the average film thickness can be made uniform between the wafers W with high accuracy. However, the present invention is not limited to determining the correction rotation speed at the time of application and the correction rotation speed at the time of drying based on the temperature difference at the peripheral edge portion of the wafer W and the temperature difference at the central portion. The correction rotation speed during drying and the correction rotation speed during coating may be determined based on the temperature difference in the part and the temperature difference in the center part.

  In addition, after supplying the coating liquid as in the above example, the rotation speed of the wafer W is decreased, and then the coating liquid is supplied instead of increasing the drying speed and drying the resist. The processing may be continued by rotating at a rotational speed that can reduce the number and dry the resist at the same time that the resist is leveled. In the above example, processing is performed for the same lot, but processing may be performed for wafers W of a plurality of lots in succession.

  Hereinafter, the coating and developing apparatus 7 in which the resist coating apparatus 2 is incorporated will be described. FIG. 9 is a plan view of a resist pattern forming system in which an exposure apparatus C4 is connected to the coating and developing apparatus 7, and FIG. 10 is a perspective view of the system. FIG. 11 is a longitudinal sectional view of the system. The coating / developing apparatus 7 is provided with a carrier block C1, and the transfer arm 72 takes out the wafer W from the hermetically sealed carrier 70 mounted on the mounting table 71 and transfers it to the processing block C2. The transfer arm 72 is configured to receive the processed wafer W from C2 and return it to the carrier 70.

  As shown in FIG. 10, the processing block C2 is a first block (DEV layer) B1 for performing development processing and a first processing for forming an antireflection film formed under the resist film in this example. 2 block (BCT layer) B2, a third block (COT layer) B3 for applying a resist film, a fourth block for forming an antireflection film formed on the upper layer side of the resist film ( ITC layer) B4 is laminated in order from the bottom.

  Since each layer of the processing block C2 is configured in the same manner as in plan view, the third block (COT layer) B3 will be described as an example. The COT layer B3 is a resist film formation for forming a resist film as a coating film. A module 73, shelf units U1 to U4 constituting a heating / cooling system processing module group for performing pre-processing and post-processing of the processing performed in the resist film forming module 73, and the resist film forming module 73 A transfer arm A3 is provided between the processing module group of the heating / cooling system and transfers the wafer W between them. This resist film forming module 73 has a configuration in which three coating portions 74 corresponding to the resist coating apparatus 2 are provided in a common casing.

  The shelf units U1 to U4 are arranged along the transfer region R1 in which the transfer arm A3 moves, and are configured by stacking the heating module and the cooling module, respectively. The heating module includes a heating plate for heating the mounted wafer, and the cooling module includes a cooling plate for cooling the mounted wafer.

  For the second block (BCT layer) B2 and the fourth block (ITC layer) B4, an antireflection film forming module and a protective film forming module corresponding to the resist film forming module are provided, respectively. Instead, the configuration is the same as that of the COT layer B3 except that a chemical solution for forming an antireflection film and a chemical solution for forming a protective film are supplied to the wafer W, respectively.

  For the first block (DEV layer) B1, development modules corresponding to the resist film forming module are stacked in two stages in one DEV layer B1, and heating for pre-processing and post-processing of the development module is performed. A shelf unit constituting a processing module group of the cooling system is provided. In the DEV layer B1, a transfer arm A1 for transferring the wafer W to the two-stage development module and the heating / cooling processing module is provided. That is, the transport arm A1 is shared by the two-stage development module.

  Further, as shown in FIGS. 9 and 11, the processing block C2 is provided with a shelf unit U5, and the wafer W from the carrier block C1 is one transfer unit of the shelf unit U5, for example, a second block (BCT layer). It is sequentially conveyed to the corresponding delivery unit CPL2 of B2. The transfer arm A2 in the second block (BCT layer) B2 receives the wafer W from the transfer unit CPL2 and transfers it to each unit (antireflection film forming module and heating / cooling processing unit group). Thus, an antireflection film is formed on the wafer W.

  Thereafter, the wafer W is transferred to the transfer unit BF2 of the shelf unit U5, the transfer arm D1, and the transfer unit CPL3 of the shelf unit U5, where the temperature is adjusted to, for example, 23 ° C., and then the third block ( COT layer) B3 and a resist film is formed by the resist film forming module 73. Further, the wafer W is transferred to the transfer unit BF3 in the shelf unit U5 through the transfer arm A3 → the transfer unit BF3 of the shelf unit U5 → the transfer arm D1. The wafer W on which the resist film is formed may further have a protective film formed in the fourth block (ITC layer) B4. In this case, the wafer W is transferred to the transfer arm A4 via the transfer unit CPL4, and after the protective film is formed, the wafer W is transferred to the transfer unit TRS4 by the transfer arm A4.

  On the other hand, on the upper part in the DEV layer B1, there is a shuttle arm 75 which is a dedicated transfer means for directly transferring the wafer W from the transfer unit CPL11 provided in the shelf unit U5 to the transfer unit CPL12 provided in the shelf unit U6. Is provided. The wafer W on which the resist film and further the protective film are formed is transferred from the transfer units BF3 and TRS4 to the transfer unit CPL11 via the transfer arm D1, and from there to the transfer unit CPL12 of the shelf unit U6 directly by the shuttle arm 75. It is conveyed and taken into the interface block C3. In addition, the delivery unit to which CPL is attached in FIG. 11 also serves as a cooling unit for temperature control, and the delivery unit to which BF is attached also serves as a buffer unit on which a plurality of wafers W can be placed.

  Next, the wafer W is transferred to the exposure apparatus C4 by the interface arm 76, and after a predetermined exposure process is performed here, the wafer W is placed on the transfer unit TRS6 of the shelf unit U6 and returned to the processing block C2. The returned wafer W is subjected to development processing in the first block (DEV layer) B1, and transferred to the transfer unit TRS1 of the shelf unit U5 by the transfer arm A1. Thereafter, it is returned to the carrier 70 via the delivery arm 72. In FIG. 11, U1 to U4 are thermal system unit groups in which a heating unit and a cooling unit are stacked. In the above example, the resist coating apparatus 2 is applied to the resist film forming module 73. However, the antireflection film forming module of the BCT layer B2 corresponding to the resist film forming module 73 that is a liquid processing unit, the ITC layer B4 The resist coating apparatus 2 may be applied to the protective film forming module to control the thickness of the antireflection film and the thickness of the protective film.

Example 1
A resist film was formed on wafers W ₁ to W _{25 in} the same lot using the resist coating apparatus 2 according to the procedure of the above-described embodiment. Then, the resist film thickness was measured at a plurality of predetermined positions within the surface of each wafer W, and the average value, that is, the average film thickness was calculated for each wafer W. FIG. 12 shows the results of this experiment. The horizontal axis of the graph in the figure is the number of the wafer W, which corresponds to the order of processing performed by the resist coating apparatus 2. The vertical axis of the graph indicates the calculated average film thickness value. The results of Example 1 are indicated by square plots, and the average film thickness values between the wafers W are substantially equal as shown by the respective square plots.

(Comparative Example 1)
Resist films were formed on wafers W ₁ to W ₂₅ of the same lot in the same way as in Example 1 using a conventional resist coating apparatus. In this conventional resist coating apparatus, the number of rotations during coating and the number of rotations during drying do not change for each wafer W and are constant. The results of this experiment are shown as circle plots in FIG. 12. As shown by the respective circle plots, in Comparative Example 1, the average film thickness of the wafer W increases as the wafer is processed later. Tend to be. Then, the value of the average film thickness is greatly different between Example 1 and Comparative Example 1 as the wafer W that has been processed thereafter.
Therefore, by using the resist coating apparatus 2 from the results of Example 1 and Comparative Example 1, it is possible to suppress an increase in the value of the average film thickness of the resist when performing the coating process on the wafer W continuously. It was shown that the uniformity of the average film thickness can be increased.

(Example 2)
Using the resist coating apparatus 2, resist films were formed on the wafers W ₁ to W ₂₅ in the same lot in the same manner as in Example 1 according to the above-described embodiment. Then, the resist film thickness was measured at a plurality of predetermined locations within the surface of each wafer W, and 3σ (sigma) was calculated. The smaller this 3σ value, the better the film thickness profile, that is, the smaller the variation. In FIG. 13, each bar graph indicated by hatching indicates 3σ of each wafer W obtained in the experiment of the second embodiment, and the wafers W processed in the resist coating apparatus 2 are sequentially processed from the left side to the right side. Shown side by side.

(Comparative Example 2)
Resist films were formed on wafers W ₁ to W ₂₅ in the same lot as in Comparative Example 1 using a conventional resist coating apparatus. Then, in the same manner as in Example 2, the resist film thickness was measured at a plurality of predetermined locations within the surface of each wafer W, and 3σ was calculated. In FIG. 13, the bar graph for each wafer W in Comparative Example 2 is shown on the left side of the bar graph for each wafer W in Example 2, and the bar graph in Comparative Example 2 is distinguished from the bar graph in Example 2. A number of points are attached.

When comparing the wafer W ₁ to the wafer W ₂₅ between the example 2 and the comparative example 2, in most cases, the comparative example 2 has a larger 3σ value than the example 2. In Comparative Example 2, the value of 3σ tends to increase as the wafer W is processed later, but in Example 2, the value of 3σ is relatively uniform between the wafers W. With respect to the wafer W that has been processed toward this direction, the value of 3σ is largely different between Example 2 and Comparative Example 2.
Therefore, by using the resist coating apparatus 2 based on the results of Example 2 and Comparative Example 2, it is possible to suppress the variation in the film thickness profile of the wafer W when performing the continuous coating process. It was shown that this variation can be effectively suppressed in W.

(Example 3)
Using the resist coating apparatus 2, resist films were formed on the wafers W ₁ to W ₂₅ in the same lot in the same manner as in Example 1 according to the above-described embodiment. And the film thickness of each position in the diameter direction of each wafer W was measured. FIG. 14A is a graph showing the measurement results. The horizontal axis of the graph indicates the distance (mm) from the center of the wafer W, and the vertical axis of the graph indicates the film thickness (nm). In the graph, the results for the wafer W ₁ , the wafer W ₁₀ , and the wafer W ₂₅ are shown by plots of squares, white circles, and black circles, respectively.

(Comparative Example 3)
Resist films were formed on wafers W ₁ to W ₂₅ in the same lot as in Comparative Example 2 using a conventional resist coating apparatus. And the film thickness of each position in the diameter direction of each wafer W was measured. FIG. 14B is a graph showing the measurement results. The horizontal axis of the graph represents the distance (mm) from the center of the wafer W, and the vertical axis of the graph represents the film thickness (nm). Similar to Example 3, in the graph, the results for wafer W ₁ , wafer W ₁₀ , and wafer W ₂₅ are shown as square, white circle, and black circle plots, respectively.

The result of Example 3 and the result of Comparative Example 3 are compared. In Example 3, the wafer W ₁ , the wafer W ₁₀ , and the wafer W ₂₅ have less variations in the film thickness in the plane than Comparative Example 3, and The difference in film thickness among the wafers W ₁ , W ₁₀ , and W ₂₅ is small. The graphs of FIGS. 14A and 14B show the results for three wafers W, W ₁ , W ₁₀ , and W ₂₅ for convenience of illustration, but actually more wafers are shown. For the wafer W not measured in the graph in Example 3, the film thickness variation in the surface is small as in the wafer W shown in the graph, and the film thickness between the wafers W is greatly increased. There was no difference. As for the wafer W that is not shown in the graph in Comparative Example 3, the in-plane film thickness variation is larger than that in the wafer W shown in the graph as in the case of the wafer W shown in the graph. There was a large difference in film thickness, and the film thickness tended to increase as the wafer W was processed later.
Therefore, from Example 3 and Comparative Example 3 as well, the resist coating apparatus 2 has a variation in the film thickness profile within the wafer W surface and the average film thickness between the wafers W when performing a continuous coating process on the wafer W. It can be said that variation can be suppressed.

It is a vertical section top view of the resist coating device which is an embodiment of the present invention. It is a cross-sectional plan view of the resist coating apparatus. It is a block diagram of the control part with which the said resist coating apparatus is provided. 3 is a graph showing the relationship between the number of rotations of each wafer W and time. It is a flowchart of processing of the first wafer W. It is a flowchart of processing of the second and subsequent wafers W. It is process drawing which showed the procedure in which a resist is formed in a wafer. It is process drawing which showed the procedure in which a resist is formed in a wafer. It is a top view of the application | coating and developing apparatus provided with the said resist coating device. It is a perspective view of the coating and developing apparatus. FIG. 2 is a longitudinal plan view of the coating and developing apparatus. It is a graph which shows the result of an Example and a comparative example. It is a graph which shows the result of an Example and a comparative example. It is a graph which shows the result of an Example and a comparative example. It is explanatory drawing which shows the coating film formed with the conventional coating method.

Explanation of symbols

W Semiconductor wafer R Resist 2 Resist coating device 22 Rotation drive unit 24 Cup 31 Resist liquid nozzle 41 Solvent nozzle 51 Radiation thermometer 52 Radiation thermometer 6 Control unit 61 Program 64 Work memory 7 Coating and developing device 73 Resist coating module

Claims (12)

In a coating apparatus that performs spin coating that adjusts the film thickness profile of the coating film according to the number of rotations of the substrate during coating of the coating solution, and then adjusts the average film thickness of the coating film by rotating at a lower number of rotations ,
A substrate holding unit configured to hold the substrate horizontally and rotate about a vertical axis by a rotation mechanism;
First temperature measuring means for measuring the temperature of the substrate held by the substrate holding unit;
The temperature measurement value measured by the first temperature measuring unit before the coating process for one substrate and the first temperature before the coating process for a subsequent substrate that performs the coating process after the one substrate. Based on the temperature measurement value measured by the measurement means, the number of rotations for adjusting the film thickness profile of the coating film in the coating process performed on the one substrate, and a predetermined constant, the subsequent constants A coating apparatus comprising: a calculation unit that calculates a rotation number for adjusting a film thickness profile of the coating film for the substrate. A second temperature measuring means for measuring the temperature of the substrate held by the substrate holding portion;
The calculation unit calculates the temperature measurement value measured by the second temperature measurement unit before the coating process for one substrate, and the subsequent substrate that performs the coating process next to the one substrate before the coating process. The temperature measurement value measured by the second temperature measurement means, the number of rotations for adjusting the average film thickness of the coating film in the coating process performed on the one substrate, and a predetermined constant The coating apparatus according to claim 1, further comprising a function of calculating a rotation speed for adjusting an average film thickness of the coating film on the subsequent substrate.   The calculation unit calculates a temperature difference between a temperature measurement value of one substrate measured by the second temperature measurement unit and a temperature measurement value of a subsequent substrate measured by the second temperature measurement unit, and the temperature Based on the difference and the constant, the difference between the number of rotations for adjusting the average film thickness of the coating film on the subsequent substrate and the number of rotations for adjusting the average film thickness of the coating film on one substrate is calculated. The coating apparatus according to claim 2.   4. The coating apparatus according to claim 2, wherein the second temperature measuring unit measures the temperature of the central portion of the substrate.   The calculation unit calculates a temperature difference between a temperature measurement value of one substrate measured by the first temperature measurement unit and a temperature measurement value of a subsequent substrate measured by the first temperature measurement unit, and the temperature Based on the difference and the constant, the difference between the number of rotations for adjusting the film thickness profile of the coating film on the subsequent substrate and the number of rotations for adjusting the film thickness profile of the coating film on one substrate is calculated. The coating apparatus according to any one of claims 1 to 4, wherein the coating apparatus is characterized in that   6. The coating apparatus according to claim 1, wherein the first temperature measuring unit measures a temperature of a peripheral portion of the substrate. In a coating method of performing spin coating in which the film thickness profile of the coating film is adjusted by the number of rotations of the substrate at the time of coating the coating liquid, and then the average film thickness of the coating film is adjusted by rotating at a lower number of rotations ,
A step of holding one substrate horizontally in the substrate holder and rotating it around a vertical axis;
Supplying a coating solution to the one substrate to perform spin coating;
A step of measuring the temperature of the one substrate held by the substrate holding unit by the first temperature measuring means before supplying the coating liquid;
A step of horizontally holding the subsequent substrate to be coated next to the one substrate on the substrate holding portion and rotating it around a vertical axis;
Supplying a coating solution to the subsequent substrate to perform spin coating;
Measuring the temperature of the subsequent substrate held by the substrate holding unit by first temperature measuring means before supplying the coating liquid;
A temperature measurement value for one substrate measured by the first temperature measurement means, a temperature measurement value for a subsequent substrate measured by the first temperature measurement means, and a measurement for the one substrate. Based on a rotation speed for adjusting the film thickness profile of the coating film in the coating process and a predetermined constant, the rotation speed for adjusting the film thickness profile of the coating film is calculated for the subsequent substrate. Process,
A coating method characterized by comprising: A step of measuring the temperature of the one substrate held by the substrate holding unit by the second temperature measuring means before supplying the coating liquid;
Measuring the temperature of the subsequent substrate held by the substrate holding unit by the second temperature measuring means before supplying the coating liquid;
A temperature measurement value for one substrate measured by the second temperature measurement means, a temperature measurement value for a subsequent substrate measured by the second temperature measurement means, and the one substrate. Based on the number of rotations for adjusting the film thickness profile of the coating film in the coating process and a predetermined constant, the number of rotations for adjusting the average film thickness of the coating film is calculated for the subsequent substrate. Process,
The coating method according to claim 7, further comprising: In the step of calculating the number of rotations for adjusting the average film thickness of the coating film on the subsequent substrate,
Calculating a temperature difference between a temperature measurement value of one substrate measured by the second temperature measurement means and a temperature measurement value of a subsequent substrate;
Based on the temperature difference and the constant, the difference between the number of rotations for adjusting the average film thickness of the coating film on the subsequent substrate and the number of rotations for adjusting the average film thickness of the coating film on one substrate is A process of calculating;
The coating method according to claim 8, further comprising: In the step of calculating the rotational speed for adjusting the rotational speed for adjusting the film thickness profile of the coating film on the subsequent substrate,
Calculating a temperature difference between a temperature measurement value of one substrate measured by the first temperature measurement means and a temperature measurement value of a subsequent substrate;
Based on the temperature difference and the constant, the difference between the number of rotations for adjusting the film thickness profile of the coating film on the subsequent substrate and the number of rotations for adjusting the film thickness profile of the coating film on one substrate is A process of calculating;
The coating method according to claim 7, wherein the coating method is included. A carrier block into which a carrier containing a substrate is carried;
A processing block including a coating unit that applies a resist to the surface of the substrate taken out of the carrier, and a developing unit that develops the exposed substrate.
In an application / development apparatus comprising an interface block that transfers a substrate between the processing block and an exposure apparatus that exposes a resist-coated substrate,
A coating and developing apparatus comprising the coating apparatus according to claim 1 as the coating unit. A storage medium for storing a computer program used in a coating apparatus that forms a coating film by supplying a coating liquid to a rotating substrate,
A storage medium in which the computer program incorporates a group of steps for carrying out the coating method according to any one of claims 7 to 10.

Images