KR102339249B1 - Liquid processing method, liquid processing apparatus and storage medium - Google Patents

Abstract

When processing is performed by supplying a treatment liquid to an annular region including the beveled portion of a circular substrate in which the beveled portion is formed along the periphery of the surface, the width of the annular region is controlled with high precision.
A step of acquiring information on the shape of the bevel portion B with respect to a circular substrate (wafer W), and then, locally discharging the processing liquid (thinner 30) to the surface of the substrate moving the processing liquid discharge nozzle 44 to a processing position determined based on the acquired shape information of the bevel part B, and then rotate from the processing liquid discharge nozzle at the processing position a step of discharging the processing liquid to the substrate, and supplying the processing liquid to an annular region along the periphery of the substrate including the bevel portion.

Description

Liquid treatment method, liquid treatment apparatus and storage medium

The present invention relates to a liquid processing method, a liquid processing apparatus, and a storage medium for supplying a processing liquid to an annular region along the periphery of the surface of a circular substrate.

In the photolithography process of forming a resist pattern on a semiconductor wafer (hereinafter, referred to as a wafer) as a substrate, as one of the liquid processes on the wafer, a process of supplying a process liquid annularly along the periphery of the wafer is performed there is As a specific example of such a liquid treatment, there is a peripheral film removal treatment (EBR (Edge Bead Removal) treatment) in which a film solution is supplied as a treatment liquid to a wafer on which a film such as a resist film is formed on the surface to remove unnecessary films in an annular shape. For example, as described in Patent Document 1, in this EBR process, the processing liquid is locally discharged from the nozzle to the periphery of the surface of the rotating wafer mounted on the spin chuck. Since the processing liquid is directed toward the peripheral end of the wafer by the action of centrifugal force, the position at which the processing liquid is discharged in the wafer is adjusted, thereby controlling the width (cut width) of the region from which the film is removed.

Japanese Patent Laid-Open No. 2014-91105

In order to reduce the manufacturing cost of a semiconductor device, increasing the number of chips used as the semiconductor device that can be manufactured from one wafer is being studied. It is desired to enlarge towards the end. In response to such a request, in the EBR process described above, after the cut width is further narrowed, it is required to control the cut width with high precision so that an error with respect to a set value can be further suppressed.

By the way, a bevel part is formed on the periphery of the surface of a wafer. Although described in detail later, when EBR processing is performed so that a cut width may become comparatively narrow, the said cut width is influenced by the shape of this bevel part, and it is confirmed that it deviates from a set value. And since the shape of this bevel part varies with wafers, there exists a possibility that the cut width may fluctuate|occur|produce between wafers.

The present invention has been made in view of such circumstances, and an object thereof is to supply a treatment liquid to an annular region including the bevel portion of a circular substrate having a bevel portion formed along the periphery of the surface to perform treatment, It is to provide a technology that can control the width with high precision.

The liquid treatment method of the present invention is a liquid treatment method in which treatment is performed by supplying a treatment liquid to a circular substrate having a bevel portion formed along the periphery of the surface,

obtaining information on the shape of the bevel part;

then, moving a processing liquid discharge nozzle for locally discharging the processing liquid to the surface of the substrate to a processing position set based on the obtained information on the shape of the bevel portion;

thereafter, discharging the processing liquid from the processing liquid discharge nozzle at the processing position to the rotating substrate, and supplying the processing liquid to an annular region along the periphery of the substrate including the bevel portion; characterized in that

A liquid processing apparatus of the present invention is a liquid processing apparatus that performs processing by supplying a processing liquid to a circular substrate having a bevel portion formed along a periphery of a surface thereof,

a substrate holding portion for holding the substrate;

a rotating mechanism for rotating the substrate held by the substrate holding unit;

a treatment liquid discharge nozzle for discharging the treatment liquid locally on the surface of the substrate;

a moving mechanism for moving the processing liquid discharge nozzle so that a position at which the processing liquid is discharged on the surface of the substrate moves in a radial direction of the substrate;

obtaining information on the shape of the bevel part; moving the processing liquid discharge nozzle to a processing position set based on information on the shape of the bevel part; and a control unit for outputting a control signal so as to discharge the liquid and supply the processing liquid to an annular region along the periphery of the substrate including the bevel portion.

The storage medium of the present invention is a storage medium storing a computer program used in a liquid processing apparatus for supplying a processing liquid to the surface of a substrate, wherein the computer program includes steps for executing the liquid processing method. characterized.

According to the present invention, the processing liquid discharge nozzle is moved to a processing position determined based on the obtained information on the shape of the bevel part, and the processing liquid is supplied from the processing liquid discharge nozzle to the rotating substrate. Accordingly, it is possible to suppress variations in the range to which the processing liquid is supplied due to the influence of the shape of the bevel portion, so that the width of the annular region to which the processing liquid is supplied can be controlled with high precision.

1 is a schematic diagram of a coating and developing apparatus to which the present invention is applied.
Fig. 2 is a longitudinal side view of an imaging module constituting the coating and developing apparatus.
3 is a longitudinal side view of a resist film forming module constituting the coating and developing apparatus.
4 is a cross-sectional plan view of the resist film forming module.
Fig. 5 is a longitudinal side view of the wafer during EBR processing by the resist film forming module.
6 is a longitudinal side view of the wafer during EBR processing by the resist film forming module.
Fig. 7 is a plan view showing each of the wafers before and after the film is removed by the EBR process.
Fig. 8 is a longitudinal side view showing the periphery of the wafer;
Fig. 9 is a schematic diagram showing the position of the thinner supplied to the wafer by the set cut width.
10 is a block diagram of a control unit installed in the coating and developing apparatus.
11 is a flowchart showing a processing step in the coating and developing apparatus.
12 is a cross-sectional plan view showing another imaging module.
Fig. 13 is a longitudinal side view showing the periphery of the wafer;
Fig. 14 is a longitudinal side view showing another resist film forming module;
15 is a plan view of the coating and developing apparatus.
16 is a perspective view of the coating and developing apparatus.
Fig. 17 is a longitudinal side view of the coating and developing apparatus.
Fig. 18 is a perspective view showing another resist film forming module.
19 is a block diagram of a system including the coating and developing apparatus.
20 is a longitudinal side view showing the periphery of the wafer.
It is a graph which shows the result of an evaluation test.

(First embodiment)

A coating and developing apparatus 1 of a first embodiment to which the liquid processing apparatus according to the present invention is applied will be described with reference to Fig. 1 which is a schematic configuration diagram. The coating and developing apparatus 1 applies a resist to the surface of the wafer W to form a resist film, and develops the resist film after exposure to form a resist pattern. An exposure apparatus 11 for exposing the resist film is connected to the coating and developing apparatus 1 .

Reference numeral 2 in the drawing denotes an imaging module, which acquires image data by imaging the surface of the wafer W before formation of the resist film, and transmits the image data to the control unit 10 installed in the coating and developing apparatus 1 . Reference numeral 3 in the drawing denotes a resist film forming module. The resist film forming module 3 forms a resist film on the surface of the wafer W, and supplies a thinner, which is a resist solvent, to the resist film in the periphery of the surface of the wafer W, An unnecessary resist film at the periphery is removed in an annular fashion. That is, the thinner is a removal solution that dissolves and removes the resist film, and in the resist film forming module 3, the EBR process described in the description of the background of the invention is performed. This EBR process is performed by the control part 10 controlling the operation|movement of the resist film formation module 3 based on the above-mentioned image data. The liquid processing apparatus of the present invention is constituted by the imaging module 2 , the resist film forming module 3 , and the control unit 10 .

Reference numeral 12 in the drawing denotes a developing module that performs the above-described development by supplying a developer to the surface of the wafer W. Reference numeral C in the drawing denotes a carrier conveyed to the coating and developing apparatus 1 in a state in which the wafer W is stored. The coating/developing apparatus 1 is provided with a transfer mechanism for the wafer W, and the wafer W is taken out from the carrier C by this transfer mechanism, and an imaging module 2 and a resist film forming module 3 are provided. , the exposure apparatus 11 and the developing module 12 can be conveyed in this order, and can be returned to the carrier C. A solid arrow in the figure indicates a transfer path of the wafer W. As shown in FIG. A dotted arrow in the figure indicates a transmission path of the image data described above, and a dashed-line arrow indicates a transmission path of a control signal for controlling the operation of the resist film forming module 3 .

Next, with reference to the longitudinal side view of FIG. 2, the imaging module 2 is demonstrated. Reference numeral 21 in the drawing denotes a housing provided with a transfer port 22 for the wafer W, and within the housing 21, the central portion of the back surface of the wafer W is sucked to hold the wafer W horizontally. A loading stand 23 is provided. The mounting table 23 horizontally moves in the housing 21 along the guide rail 25 by the horizontal drive unit 24 . When the moving direction of the mounting table 23 is the front-rear direction, a horizontally long half mirror 26 extending from side to side is provided above the moving path of the wafer W. Further, above the half-mirror 26, a horizontally long lighting unit 27 for irradiating light downward through the half-mirror 26 is provided. Reference numeral 28 in the drawing denotes a camera that is an imaging unit.

Light irradiated from the illumination unit 27 passes through the half mirror 26, is irradiated to the wafer W moving below the half mirror 26, is reflected by the wafer W, and the reflected light is The half mirror 26, the lighting unit 27, and the camera 28 are respectively arranged so that a part of the surface of the wafer W can be imaged by being reflected back by the 26) and irradiated to the camera 28. . Then, when the imaging of the camera 28 is intermittently performed during the movement of the wafer W, the entire surface of the wafer W can be imaged. The image data acquired by the imaging of this camera 28 is transmitted to the control part 10 installed in the application|coating and developing apparatus 1 shown in FIG.

Next, the resist film forming module 3 will be described with reference to a longitudinal side view of FIG. 3 , a plan view of FIG. 4 , and, if necessary, a longitudinal side view of the wafer of FIG. 5 . The resist film forming module 3 together with the control unit 10 constitutes the liquid processing apparatus of the present invention. Reference numeral 31 in the drawing denotes a spin chuck constituting the substrate holding portion, which sucks the central portion of the back surface of the wafer W to hold the wafer W horizontally. Reference numeral 32 denotes a rotation mechanism, and the spin chuck 31 is rotated so that the wafer W held by the spin chuck 31 rotates about a vertical axis. Reference numeral 33 in the drawing denotes three lifting pins for transferring the wafer W between the spin chuck 31 and the transfer mechanism, and is raised and lowered by the lifting mechanism 34 .

Reference numeral 35 in the drawing denotes a cup, and is provided so as to surround the wafer W held by the spin chuck 31 . A liquid outlet 36 is opened at the bottom of the cup 35 . Resist and thinner overflowing from the wafer W into the cup 35 or scattered from the wafer W are removed from the liquid outlet 36 through the inside of the cup 35 . An exhaust pipe 37 is provided on the bottom surface of the cup 35 so as to protrude upward from the bottom surface at a position inside the liquid outlet 36 , and the inside of the cup 35 is exhausted.

Reference numeral 38 in the drawing denotes a resist discharge nozzle, which discharges the resist downward. Reference numeral 39 in the drawing denotes a resist supply mechanism, and includes, for example, a tank for storing resist, a pump for pumping resist from the tank, and the like to the resist discharge nozzle 38 . In the figure, reference numeral V1 denotes a valve, which controls the supply of resist from the resist supply mechanism 39 to the resist discharge nozzle 38 . The resist ejection nozzle 38 ejects the resist to the center of the surface of the rotating wafer W held by the spin chuck 31 . The discharged resist is extended to the peripheral end of the wafer W by centrifugal force, so that a resist film R1 is formed so as to cover the entire surface of the wafer W.

Reference numeral 41 in the drawing denotes an arm, and the resist ejection nozzle 38 is supported on one end side of the arm 41 . The other end side of the arm 41 is connected to the moving mechanism 42 . The moving mechanism 42 is comprised so that horizontal movement is possible along the guide 42A, and the arm 41 can be raised and lowered. By the operation of the moving mechanism 42 , the resist ejection nozzle 38 can move between the standby region 43 provided on the central portion of the wafer W and the outside of the cup 35 .

Reference numeral 44 in the drawing denotes a thinner discharge nozzle for performing the EBR process, and includes, for example, a discharge port 40 having a circular opening, and discharges thinner as a processing liquid downward from the discharge port 40 . In Fig. 5, the longitudinal side of the thinner discharge nozzle 44 is shown, and the bore (inner diameter of the thinner discharge nozzle 44) of the discharge port 40 indicated by reference numeral A1 in the drawing is, for example, 0.3 mm. In the figure, thinner is indicated by reference numeral 30. Reference numeral 45 in the drawing denotes a thinner supply mechanism, and includes, for example, a tank for storing the thinner 30 , a pump for pumping the thinner 30 from the tank toward the thinner discharge nozzle 44 , and the like. In the drawing, reference numeral V2 denotes a valve, and controls the supply of the thinner 30 from the thinner supply mechanism 45 to the thinner discharge nozzle 44 .

Reference numeral 46 in the drawing denotes an arm, and the thinner discharge nozzle 44 is supported on one end side of the arm 46 . The other end side of the arm 46 is connected to the moving mechanism 47 . The movement mechanism 47 is comprised so that horizontal movement is possible along the guide 47A, and the arm 46 can be raised and lowered. By the operation of the moving mechanism 47 , the thinner ejection nozzle 44 can move between the standby area 48 of the nozzle provided on the periphery of the wafer W and the outside of the cup 35 . In addition, in the discharge direction of the thinner 30 of the thinner discharge nozzle 44 , if the projection area of the discharge port 40 onto the wafer W surface is R2, the thinner discharge nozzle by the moving mechanism 47 described above. By the horizontal movement of (44), the projection region R2 can move along the diameter of the wafer W along the diameter of the wafer W.

In the EBR process performed in the resist film forming module 3, a thinner is applied to the periphery of the surface of the wafer W held by the spin chuck 31 and rotated at a predetermined rotation speed, as shown in FIG. 5 . The thinner 30 is locally discharged from the discharge nozzle 44 . The discharged thinner 30 flows toward the outside of the wafer W from the discharged position, ie, the above-described projection region R2, by centrifugal force, so as to be limited in the periphery of the wafer W as shown in FIG. 6 . Thus, the resist film R1 is removed. In FIG. 7, the wafer W plane before and after this EBR process is shown, and the resist film R1 is displayed in gray scale. As shown in FIG. 7 , the resist film R1 is removed in the annular region along the periphery of the wafer W by the EBR process. In addition, the width of the annular region from which the resist film R1 is removed in this way is the cut width, and is indicated by reference numeral R3 in FIGS. 6 and 7 . As described above, since the thinner discharge nozzle 44 can be moved in the radial direction of the wafer W, the cut width R3 can be freely set by the user of the apparatus.

Here, an example of the wafer W subjected to EBR processing as described above will be described in detail with reference to FIG. 8 , which is a longitudinal side view. The wafer W is, for example, a circular substrate having a diameter of 300 mm. And the peripheral edge of the surface of the wafer W is comprised as the bevel part B which forms the inclined surface descending toward the peripheral edge part of the said wafer W. That is, the bevel portion B is formed along the periphery of the wafer W. As shown in FIG.

In Fig. 8, wafers W belonging to different lots L1 and L2, respectively, are shown. In the example shown in this FIG. 8, between the wafer W of lot L1 and the wafer W of lot L2, as the shape of the bevel part B, the width (the upper end and the lower end of the above-described inclined surface in the horizontal direction) distance) are different. In each figure, the width of this bevel portion B is indicated as B1, the wafer W of the lot L2 has a longer width B1 than the wafer W of the lot L1. As a specific example, the wafer W of the lot L1 ( The width B1 in W) is 210 µm, and the width B1 in the wafer W of the lot L2 is 350 µm. In addition to the example shown in FIG. 8 , wafers W having various widths B1 are loaded into the coating and developing apparatus 1 and processed. Moreover, in each figure, in the surface of the wafer W, while being surrounded by the bevel part B, the flat part adjacent to the bevel part B is shown as F.

As described in the item of the problem to be solved, when the cut width R3 is set relatively narrow, the shape of the bevel portion B, for example, due to the width B1 of the bevel portion B, the cut width R3 is A variation may occur in the cut width R3 between the wafers W along with a deviation from the set value. That is, in the EBR processing of each wafer W of the lots L1 and L2 described above, the projection area R2 of the discharge port 40 of the thinner discharge nozzle 44 is disposed at the same position of each wafer W and processed. , the actual cut width R3 of each wafer W deviates from the set value, and the cut width R3 may become non-uniform between the wafer W of the lot L1 and the wafer W of the lot L2.

Consideration of this phenomenon is demonstrated with reference to FIG. 9 which shows typically the thinner 30 which is discharged on the surface of the wafer W and immediately before colliding with the said projection area|region R2. The thinner 30 in the drawing shows a state seen from the side, and therefore the width of the thinner 30 in the drawing is the aperture A1 of the discharge port 40 described above. 9, the wafer W of lot L1 and the set value of the cut width R3 are set to 0.7 mm, 0.6 mm, 0.5 mm, 0.45 mm, 0.4 mm, and 0.35 mm, respectively. The thinner 30 each discharged to the wafer W is sequentially shown from the upper end to the lower end in Fig. 9 for each of these set values, and on the left side in Fig. 9, the thinner 30 discharged to the wafer W in the lot L1 ( 30), the thinner 30 discharged to the wafer W of the lot L2 is shown on the right side in FIG. 9, respectively. In addition, among the discharged thinners 30 , the thinner 30 facing the bevel portion B is shown in gray scale darker than the thinner 30 facing the flat portion F .

Also, just below the thinner 30 at each stage in Fig. 9, the longitudinal side of the region from which the resist is removed in the surface portion of the wafer W is shown. , the flat portion (F) and the bevel portion (B) are not distinguished. However, in the surface portion of the wafer W displayed in this way, the region located above the bevel portion B of the wafer W shown on the lower end side of FIG. 9 is the bevel portion B, and the lower portion of FIG. A region located above the flat portion F of the wafer W shown to the side is the flat portion F.

As shown in FIG. 9 , when the set value of the cut width R3 is relatively small, the projection area R2 of the discharge port 40 of the thinner discharge nozzle 44 overlaps the bevel portion B. That is, the thinner 30 is directly discharged to the bevel portion (B). However, since the bevel portion B has an inclined surface, the thinner 30 directly discharged to the bevel portion B is easily discharged from the peripheral end of the wafer W through the inclined surface. The thinner 30 discharged to the projection region R2 is slightly diffused from the projection region R2 toward the central portion of the wafer W, but is directly discharged to the bevel portion B as described above and is discharged from the peripheral edge of the wafer W. It is thought that diffusion of the thinner 30 toward the central portion of the wafer W is suppressed as the amount of discharged thinner is increased. Therefore, the degree of overlap of this projection area|region R2 and the bevel part B becomes a factor to which cut width R3 fluctuates.

As described above, when the set value of the cut width R3 is relatively small and the set value of the cut width R3 is the same for the wafer (W) of the lot L1 and the wafer (W) of the lot L2, the wafer (W) of the lot L2 Since the width B1 of the bevel portion B is larger than that of the wafer W of the lot L1, the region overlapping the bevel portion B among the projection regions R2 is the one at the time of processing the wafer W of the lot L2. This is larger than when processing the wafer W of lot L1. Therefore, in the wafer W of the lot L2, a larger amount of the thinner 30 than the wafer W of the lot L1 does not sufficiently act on the resist film R1 and is discharged, so the wafer W of the lot L2 and The cut width R3 fluctuates between the wafers W of the lot L1, and the wafer W of the lot L2 has a smaller cut width R3 than the wafers W of the lot L1. That is, for each wafer W, as the number of thinner 30 directly discharged to the bevel portion B increases, the thinner 30 is less likely to act on the resist film R1, so the set value of the cut width R3 The difference between the cut width R3 and the actual cut width R3 increases. In other words, the ratio of the thinner 30 supplied to the flat portion F of the wafer W among the thinner 30 discharged from the thinner discharge nozzle 44 (hereinafter referred to as the thinner flat portion ratio) is The higher it is, the closer the actual cut width R3 is to the set value. In addition, the experiment used as the basis for the above-mentioned consideration demonstrated using this FIG. 9 is shown later.

The coating/developing apparatus 1 is configured to suppress the deviation between the set value of the cut width R3 and the actual cut width R3. Specifically, the width B1 is acquired as information on the shape of the bevel portion B from the image data acquired by the imaging module 2 described above. Further, from the width B1 of the bevel portion B, the above-described thinner flat portion ratio is obtained by an approximate expression. Then, the cut width R3 obtained when the EBR process is performed by arranging the thinner discharge nozzle 44 at a position preset corresponding to the set value of the cut width R3 (hereinafter referred to as an initial setting position) is set to a virtual cut width R3 If , the virtual cut width R3 is acquired based on the correspondence relationship between the said virtual cut width R3, the thinner flat part ratio, and the set value of the cut width R3. This correspondence relationship is a correspondence relationship acquired by performing an experiment beforehand, and it describes as the correspondence relationship for virtual cut width detection hereinafter. When the virtual cut width R3 is calculated in this way, the difference between the set values of the virtual cut width R3 and the cut width R3 is calculated as a correction amount with respect to the initial set position of the thinner discharge nozzle 44, and from the initial set position The thinner ejection nozzle 44 moves to a position shifted by the amount corresponding to this correction amount, and EBR processing is performed.

Then, the control part 10 is demonstrated, also referring FIG. 10. FIG. This control part 10 is a computer, for example, the program 51 stored in storage media, such as a flexible disk, a compact disk, a hard disk, MO (magneto-optical disk), and a memory card, is installed. The installed program 51 transmits a control signal to each module and conveying mechanism constituting the coating and developing apparatus 1, and controls the operation thereof so as to advance the processing shown in the flowchart to be described later (each step). ) is included. Specifically, conveyance of the wafer W between the modules described above by the conveyance mechanism, movement of the mounting table 23 in the imaging module 2, imaging of the camera 28, and resist In the film forming module 3 , the program 51 enables each operation such as supply of each chemical solution by each of the supply mechanisms 39 and 45 , opening and closing of valves V1 and V2 , and rotation of the spin chuck 31 . ) outputs a control signal to each unit of the coating and developing device 1 . In addition, the acquisition of image data of the wafer W, detection of the width B1 of the bevel portion B in the image data, and the calculation of the position correction amount of the thinner discharge nozzle 44 based on the width B1 described above are also included in this program. (51) is done.

The control unit 10 includes a memory 52, in which the above-described virtual cut width detection correspondence relationship is stored so that the position of the thinner ejection nozzle 44 can be corrected. has been Moreover, the control part 10 is provided with the input part 53 comprised by, for example, a keyboard, a touch panel, etc., The user of an apparatus can input the setting value of the cut width R3 from this input part 53. In addition, in order to ensure the precision of the cut width R3, for example, the set value of the cut width is set so that the set value of the cut width R3 < the width B1 of the bevel portion B of each wafer W. Reference numeral 54 in the figure denotes a work memory provided for detecting the width B1 of the bevel portion B and performing the above-described arithmetic processing based on the detected width B1.

Next, an example of the process of calculating the correction amount with respect to the initial setting position of the thinner discharge nozzle 44 from the width B1 of the bevel part B by the said program 51 is demonstrated. When the said width B1 is acquired, following formula 1 will be performed, and the calculation value in this formula 1 will become the thinner flat part ratio X mentioned above. However, in Equation 1, when the thinner flat portion ratio X>1, the projection area R2 of the discharge port 40 of the thinner discharge nozzle 44 does not overlap the bevel portion B, and the thinner discharge nozzle ( Since all of the thinner 30 discharged from 44 are supplied toward the flat portion F of the wafer W, it is treated as the thinner flat portion ratio X=1.

Thinner flat portion ratio X = (set value of cut width R3 - width B1 of bevel portion B) / (diameter A1 of thinner discharge nozzle 44) ... Equation 1

Then, the value of the virtual cut width R3 is computed based on this thinner flat part ratio X and following Formula 2 and Formula 3. Equation 2 is a calculation expression obtained by conducting an experiment in advance, and Equation 2 and Equation 3 correspond to the above-described corresponding relationship for detecting a virtual cut width. Then, according to the calculated value of the virtual cut width R3 and Equation 4 below, the correction amount for the initial setting position of the thinner discharge nozzle 44 is calculated.

Coefficient of variation k=0.645X+0.420 ... Equation 2

Imaginary cut width R3 = Set value of cut width R3 x coefficient of variation k ... Equation 3

Correction amount for the initial setting position of the thinner discharge nozzle 44 = Set value of cut width R3 - Virtual cut width R3 ... Equation 4

Next, with reference to the flowchart of FIG. 11, the processing process of the wafer W in the application|coating and developing apparatus 1 is demonstrated in order. First, the set value of the cut width R3 is input to the control part 10 by a user. That is, the setting for the initial setting position of the thinner discharge nozzle 44 is performed. Then, the wafer W is transferred from the carrier C to the imaging module 2 , the surface of the wafer W is imaged, and image data of the surface of the wafer W is acquired by the control unit 10 (step S1). Further, when the width B1 of the bevel portion B is detected from the image data by the control unit 10 (step S2), the width B1 of the bevel portion B, the initial setting position of the thinner discharge nozzle 44, and the virtual Based on the corresponding relationship for detecting the cut width of , the correction amount for the initial setting position of the thinner ejection nozzle 44 is calculated. That is, the calculation described by the above formulas 1 to 4 is executed (step S3).

After the wafer W is transferred to the resist film forming module 3 and the resist film R1 is formed over the entire surface of the wafer W (step S4), the amount of correction calculated for the initial setting position is applied in the horizontal direction. It is determined so that the thinner discharge nozzle 44 is disposed at the processing position shifted by . Specifically, for example, the initial setting position is set as a position where the center of the projection area R2 of the discharge port 40 of the thinner discharge nozzle 44 is spaced apart by X mm from the peripheral end of the wafer W, and the correction amount Assuming that the calculation is calculated as shifting Y mm toward the center side of the wafer W, the thinner ejection nozzle 44 is disposed so that the center of the projection region R2 is positioned X+Y mm apart from the peripheral end of the wafer W. Then, as described with reference to FIGS. 5 to 7 , the thinner 30 is discharged to the rotating wafer W, and the periphery resist film R1 of the wafer W is removed so that the cut width R3 becomes the set value (step S5). Thereafter, the wafer W is transferred to the exposure apparatus 11, where the resist film R1 is exposed, and the resist film R1 is developed along the exposure pattern by the developing module 12 to form a resist pattern ( step S6). After that, the wafer W is returned to the carrier C.

In the coating and developing apparatus 1 according to the first embodiment, the thinner discharge nozzle 44 is disposed and rotated at a position corresponding to the obtained set values of the width B1 and the cut width R3 of the bevel portion B. The thinner 30 is discharged to the periphery of the wafer W, and the resist film R1 formed on the periphery is removed in an annular shape along the periphery of the wafer W. Thereby, it can suppress that the actual cut width R3 deviate|deviates from a set value. Therefore, it is possible to match the cut width R3 between the wafers W having the width B1 of the bevel portion B different from each other.

(Second embodiment)

Subsequently, the coating and developing apparatus 1 according to the second embodiment will be mainly described with respect to differences from the coating and developing apparatus 1 according to the first embodiment. This coating and developing apparatus 1 is provided with the imaging module 6 instead of the imaging module 2 . As a difference of this imaging module 6 from the imaging module 2, as shown in FIG. 12 which is a transverse plan view, the thing in which the camera 29 is provided instead of the camera 28 is mentioned. The dotted arrow in the figure indicates the optical axis of the lens constituting the camera 29 , and the camera 29 images the periphery of the wafer W mounted on the mounting table 23 from the side, as shown in FIG. 13 . The image data viewed from the side of the periphery of the wafer W as shown is transmitted to the control unit 10 . The program 51 of the control unit 10 obtains, for example, the width B1 of the bevel portion B and the height of the bevel portion B indicated by H in the drawing from this image data, and from these width B1 and the height H , an obtuse angle θ1 formed between the flat surface constituting the flat portion F and the inclined surface of the bevel portion B, and an acute angle θ2 formed between the inclined surface and the horizontal surface (indicated by a dashed line in the figure) constituting the bevel portion B It is designed to be calculated.

As described above, if the thinner discharge nozzle 44 is disposed so that the projection area R2 of the discharge port 40 overlaps the bevel portion B and the thinner 30 is discharged to the wafer W, the obtuse angle θ1 will be small (= As the acute angle θ2 is larger), the thinner 30 discharged to the bevel portion B rapidly flows to the peripheral end of the wafer W and is removed from the wafer W. Therefore, it is considered that the error between the magnitudes of the obtuse angle θ1 and the acute angle θ2 and the set values of the actual cut width R3 and the cut width R3 corresponds. Accordingly, in the second embodiment, the correction amount for the initial setting position of the thinner discharge nozzle 44 is calculated based on the width B1 and the obtuse angle θ1 of the bevel portion B described above. Specifically, the coefficient of variation k expressed by the above formula 2 is corrected based on the obtuse angle θ1. For this purpose, the memory 52 of the control unit 10 stores the correspondence relation between the obtuse angle θ1 and the correction value α of the coefficient of variation k (hereinafter, referred to as the correspondence relation to the obtuse angle θ1).

The processing steps in the coating and developing apparatus 1 of the second embodiment will be described. First, as operations corresponding to steps S1 and S2 of the first embodiment, the imaging module 6 is shown in FIG. 13 . Image data viewed from the side of one wafer W is acquired, and the width B1 and obtuse angle ?1 of the bevel portion B are detected. Then, as an operation corresponding to step S3, the above formulas 1 and 2 are sequentially executed, and the coefficient of variation k is calculated. Further, based on the detected obtuse angle θ1 and the corresponding relation to the above-described obtuse angle θ1, a correction value α of the coefficient of variation k is calculated, for example, by adding this correction value α to the coefficient of variation k calculated in Equation 2 This k is corrected. Then, Equations 3 and 4 are executed using the corrected k to calculate the amount of correction for the initial setting position of the thinner discharge nozzle 44 . After the correction amount is calculated in this way, steps S4 to S6 are performed similarly to the first embodiment. That is, the formation of the resist film, the EBR process by the thinner ejection nozzle 44 arranged based on the calculated correction amount, and the wafer W development process after exposure are sequentially performed.

In addition, instead of storing the correspondence relationship for the above-described obtuse angle θ1 in the memory 52, the corresponding relationship between the acute angle θ2 and the correction value α of the coefficient of variation k (correspondence to the acute angle θ2) is stored, and the control unit 10 ), the correction value α may be calculated based on the correspondence between the acute angle θ2 and the acute angle θ2 detected by . According to this 2nd Embodiment, it can suppress more reliably that the cut width R3 deviates from a set value.

By the way, the correspondence relationship between the obtuse angle θ1 and the correction amount with respect to the initial setting position of the thinner discharge nozzle 44 is stored in the memory 52, and the control unit 10 controls the imaging module 6 according to the second embodiment. ), when the obtuse angle θ1 is obtained from the image data transmitted from the camera 29 , the amount of correction for the initial setting position of the thinner ejection nozzle 44 may be calculated based on this correspondence relationship. The obtuse angle θ1 can be obtained, for example, by detecting the inclined surface of the bevel portion B in the image and detecting the angle between the inclined surface and the horizontal surface. That is, among the width B1 of the bevel portion B and the inclination of the bevel portion B, the correction amount for the initial setting position of the thinner discharge nozzle 44 may be calculated based on only the inclination of the bevel portion.

(Third embodiment)

Subsequently, the coating and developing apparatus 1 of the third embodiment will be mainly described with respect to the differences from the first embodiment. In the coating and developing apparatus 1 of the third embodiment, a resist film forming module 7 shown in FIG. 14 is provided instead of the resist film forming module 3 . This resist film forming module 7 is configured in substantially the same manner as the resist film forming module 3, with the difference being that, in addition to the thinner ejection nozzle 44, a circular ejection port 70 is provided at the tip of the arm 46. One thinner discharge nozzle 71 is provided. As for the projection area of the discharge port 70 on the surface of the wafer W facing the discharge direction of the thinner 30, similarly to the projection area R2 of the discharge port 40 of the thinner discharge nozzle 44, the wafer ( The diameter phase of W) can be moved along that diameter.

In the drawing, within the circle frame of the dashed-dotted line at the end of the dotted arrow, the terminal side surfaces of the thinner discharge nozzles 44 and 71 are shown, and as shown in this cross section, the discharge port of the thinner discharge nozzle 71 ( The aperture A2 of 70 is larger than the aperture A1 of the discharge port 40 of the thinner discharge nozzle 44 . In addition, the thinner discharge nozzle 71 is connected to the thinner supply mechanism 45 via the valve V3. In this resist film forming module 7, when either one of the valves V2 and V3 is opened, the thinner 30 is discharged from either one of the thinner discharge nozzles 44 and 71. That is, one of the thinner ejection nozzles 44 and 71 is selected and EBR processing is performed, and this selection is performed based on the width B1 of the bevel portion B.

The reason why nozzles having different diameters are selected and used will be described. As the diameter of the nozzle is smaller, the flow rate of the liquid flow of the thinner 30 discharged to the wafer W increases, so that the liquid flow of the thinner 30 supplied to the wafer W becomes unstable, so that the entire circumference of the wafer W is In order to further increase the uniformity of the cut width, it is preferable to use a nozzle having a relatively large bore. On the other hand, the larger the aperture of the nozzle, the larger the area applied to the bevel portion B with respect to the projection area of the discharge port onto the wafer W. In order to more reliably match the cut width to the set value, it is preferable that the bore of the nozzle is small so that the area caught on the bevel portion B is small. There are advantages to using such a large-aperture nozzle and to using a small-diameter nozzle, respectively.

Then, the processing process in this 3rd Embodiment is demonstrated. First, as described in the first embodiment, steps S1 and S2 are performed, image data of the wafer W is acquired, and the width B1 of the bevel portion B is acquired based on the image data. Then, it is determined by the control part 10 whether this width B1 is more than a preset reference value, or is lower than a reference value. When it is equal to or greater than the reference value, it is decided to use the thinner discharge nozzle 44 having a small aperture in order to give priority to more reliably suppressing the deviation of the actual cut width R3 from the set value. When it is less than or equal to the reference value, it is decided to use the thinner ejection nozzle 71 with a large aperture in order to give priority to making the uniformity of the cut width at the periphery of the wafer W higher.

Then, the calculation of step S3 is performed, and the amount of correction with respect to the initial setting position of the thinner discharge nozzle 44 is calculated. In this step S3, in the above formula (1) in which the nozzle diameter is used, the selected nozzle diameter among the thinner discharge nozzles 44 and 71 is used. Thereafter, processing is performed similarly to the first embodiment, but in step S5, the selected nozzle among the thinner ejection nozzles 44 and 71 is arranged based on the correction amount calculated in step S3, and the EBR processing is performed. All. According to this third embodiment, it is possible to suppress a deviation between the set values of the actual cut width R3 and the cut width R3 for each wafer W, and furthermore, the cut width in the circumferential direction of the wafer W is suppressed. A decrease in the uniformity of R3 can be suppressed.

Subsequently, an example of a more detailed configuration of the coating and developing apparatus 1 described in FIG. 1 is shown in FIGS. 15 to 17 . The coating/developing apparatus 1 is configured by linearly connecting a carrier block D1, a processing block D2, and an interface block D3, and the interface block D3 includes an exposure apparatus 11 connected. In the following description of the coating and developing apparatus 1, the arrangement direction of the blocks D1 to D3 is the front-back direction. The carrier block D1 has a role of transferring the wafer W between the carrier C and the inside of the device, and includes a mounting table 81 for the carrier C, an opening/closing unit 82, and an opening/closing unit 82. A conveyance mechanism 83 for conveying the wafer W with respect to the carrier C is provided.

The processing block D2 is configured by sequentially stacking first to sixth unit blocks E1 to E6 for performing liquid processing on the wafer W in order from the bottom. For convenience of explanation, "BCT" is a process for forming an antireflection film on the wafer W side on the lower side, "COT" is a process for forming a resist film on the wafer W, and a resist pattern is formed on the wafer W after exposure. Each process may be expressed as "DEV". In this example, as shown in FIG. 16, the BCT layer, the COT layer, and the DEV layer are laminated|stacked two at a time from the bottom.

Here, the third unit block E3 as a representative of the unit blocks will be described with reference to FIG. 15 . A plurality of shelf units U are arranged in the front-rear direction on one left and right side of the conveying area 84 from the carrier block D1 to the interface block D3, and on the other side, two resist film forming modules 3 are provided. They are arranged in the direction they are installed. The shelf unit U includes a plurality of heating modules 85 . A transfer mechanism G3 of the wafer W is provided in the transfer region 84 described above.

The difference between the unit blocks E1, E2, E5, and E6 from the unit blocks E3 and E4 is explained. The unit blocks E1 and E2 have an antireflection film forming module instead of the resist film forming module 3 . In the antireflection film forming module, a chemical solution for forming the antireflection film is supplied to the wafer W. The unit blocks E5 and E6 have the above-described developing module 12 instead of the resist film forming module 3 . Except for these differences, the unit blocks E1 to E6 are configured similarly to each other. In Fig. 17, the conveying mechanisms of the unit blocks E1 to E6 are shown as G1 to G6.

On the carrier block D1 side of the processing block D2, a tower T1 extending vertically over each unit block E1 to E6, and a lifting mechanism for transferring the wafer W to the tower T1 ( 86) is installed. The tower T1 is constituted by a plurality of modules stacked on each other, and the modules installed at each height of the unit blocks E1 to E6 are connected to the wafers W between the transfer mechanisms G1 to G6 of the unit blocks E1 to E6. can pass As these modules, a transfer module TRS installed at the height of each unit block, a temperature control module (CPL) for temperature adjustment of the wafers (W), a buffer module for temporarily storing a plurality of wafers (W), and wafers (W) ), a hydrophobization treatment module for hydrophobizing the surface, and the imaging module 2 described above are included. In order to simplify the description, the illustration of the hydrophobization treatment module, the temperature control module, and the buffer module is omitted.

The interface block D3 includes towers T2, T3, and T4 extending vertically over the unit blocks E1 to E6, and transfer mechanisms 91 to 93 for transferring the wafer W to each tower T2 to T4, have. The transfer mechanism 91 transfers the wafers W to the towers T2 and T3 , and the transfer mechanism 92 transfers the wafers W to the towers T2 and T4 . The transfer mechanism 93 is a transfer mechanism for transferring the wafer W between the tower T2 and the exposure apparatus 11 .

Tower T2 is a transfer module TRS, a buffer module for storing and staying a plurality of wafers W before exposure processing, a buffer module for storing a plurality of wafers W after exposure processing, and temperature control of the wafers W Although the temperature control module and the like to be performed are stacked on each other, illustration of the buffer module and the temperature control module is omitted here. Although modules are also installed in towers T3 and T4, a description thereof is omitted here.

The conveyance path in this application|coating and developing apparatus 1 is demonstrated. First, the wafer W is transferred from the carrier C to the transfer module TRS0 of the tower T1 in the processing block D2 by the transfer mechanism 83 . From this transfer module TRS0, the wafer W is assigned to the unit blocks E1 and E2 and transferred. For example, when transferring the wafer W to the unit block E1, among the transfer module TRS of the tower T1, the transfer module TRS1 corresponding to the unit block E1 (a transfer capable of transferring the wafer W by the transfer mechanism G1) The wafer W is transferred from the TRS0 to the module). In addition, when transferring the wafer W to the unit block E2, the wafer W is transferred from the TRS0 to the transfer module TRS2 corresponding to the unit block E2 among the transfer module TRS of the tower T1. These wafers W are transferred by the transfer mechanism 86 .

The wafer W thus allocated is transported in the order of TRS1 (TRS2) → anti-reflection film forming module → heating module 85, then transported in the order of TRS1 (TRS2), and then to the transport mechanism 86 It is conveyed to the imaging module 2 by this, and steps S1 and S2 of the flow of FIG. 11 are performed. Thereafter, the transfer module TRS3 corresponding to the unit block E3 and the transfer module TRS4 corresponding to the unit block E4 are allocated.

In this way, the wafer W assigned to TRS3 and TRS4 is transferred from TRS3 (TRS4) to the resist film forming module 3, and steps S4 and S5 of the flow of FIG. 11 are performed. Thereafter, the wafer W is conveyed in the order of the heating module 85 → the transfer module TRS31 (TRS41) of the tower T2. After that, the wafer W is carried into the exposure apparatus 11 through the tower T3 by the transfer mechanisms 91 and 93, and the resist film R1 is exposed. The wafer W after exposure is conveyed between towers T2 and T4 by the conveying mechanisms 92 and 93 and conveyed to the delivery modules TRS51 and TRS61 of the tower T2 corresponding to the unit blocks E5 and E6, respectively. Thereafter, the wafer W is transferred to the heating module 85 and subjected to heat treatment (PEB: post-exposure baking), and then transferred to the developing module 12 to perform step S6 of the flow of FIG. 11 . After that, the wafer W is transferred to the transfer module TRS5 (TRS6) of the tower T1, and then returned to the carrier C via the transfer mechanism 83.

By the way, since the imaging of the wafer W in step S1 may be performed before the EBR process, the location where the imaging module 2 is installed is not limited to the above-described tower T1, for example, in the unit blocks E1 to E4. The imaging module 2 may be provided in the shelf unit U. Further, the resist film forming module may be configured so that the wafer W can be imaged by the resist film forming module. Fig. 18 shows the resist film forming module 63 configured as described above. The resist film forming module 63 will be described with a focus on the difference from the resist film forming module 3, and the resist film forming module 63 has a camera for imaging the peripheral portion of the surface of the wafer W. (64) is installed.

This camera 64 is provided at one end of an arm 65 extending laterally over the cup 35 so as to image the lower side. The other end of the arm 65 is connected to a rotation mechanism 66 provided above the cup 35 . By means of the rotation mechanism 66, the arm 65 rotates about the vertical axis with the base end side as the rotation center. As the arm 65 rotates in this way, the camera 64 is positioned on the opening of the cup 35 as indicated by a dashed line in the figure when imaging is performed, and is positioned on the opening of the cup 35 when not imaged, as indicated by a solid line in the figure. 35) located off the opening. As the camera 64 is positioned away from the opening in this way, the transfer of the wafer W between the transfer mechanism (not shown) and the spin chuck 31 is not hindered.

When the camera is installed in the cup 35 in this way, it may be installed so that image data of the side end portion of the wafer W as shown in FIG. 13 can be acquired. Specifically, for example, a part of the side wall of the cup 35 is configured as a transparent window, and a camera can be installed so that the side end of the wafer W can be imaged from the outside of the cup 35 through this window. ,

However, as described above, the resist film R1 is formed to have a substantially uniform thickness within the surface of the wafer W by extending from the center to the periphery of the wafer W. Therefore, before the formation of the resist film R1 and after the formation of the resist film R1, the shape of the bevel portion B is the same or approximately the same. Therefore, the imaging by the camera 64 described above may be performed before the formation of the resist film R1 or after the formation of the resist film R1. In addition, you may make it image pickup by the above-mentioned camera 28 also performed after formation of the resist film R1.

Moreover, it is not limited to detecting the width B1 of the bevel part B by imaging the wafer W in the application|coating and developing apparatus 1, either. 19 is a configuration diagram of a system for imaging the wafer W from the outside of the coating and developing apparatus 1 . This system includes a coating and developing device 1 , and an external measuring device 67 installed outside the coating and developing device 1 . The external measuring device 67 includes, for example, the imaging module 2 described above, a transport mechanism that transports the wafer W between the imaging module 2 and the carrier C, and a control unit 68 . do. This control unit 68 controls the operation of the transfer mechanism of the wafer W of the external measurement device 67 , and similarly to the control unit 10 , controls the operation of the wafer W acquired by the imaging module 2 . The image data of the surface is acquired, and it is comprised so that the width B1 of the bevel part B can be detected from the said image data. The control part 68 and the control part 10 are connected to the upper-order control part 69 which is a computer. The upper control unit 69 transmits a control signal to the carrier C transport mechanism (not shown), and in the state stored in the carrier C, the wafer W is transferred with the external measuring device 67 and the coating and developing device. (1) is conveyed between.

In this system, when the width B1 of the bevel portion B is detected by the control unit 68 of the external measurement device 67, information on the detection result is transmitted to the upper control unit 69, and the upper control unit 69 transmits this information to the control unit 10 of the coating and developing apparatus 1 . With this configuration, in the resist film forming module 3, the thinner ejection nozzles 44 are arranged based on the width B1 of the bevel portion B, and the EBR process can be performed, similarly to the first embodiment. In addition, the data of the width B1 of the bevel part B may be transmitted directly from the control part 68 to the control part 10 without going through the upper-order control part 69.

In this way, information on the shape of the bevel portion B can be obtained by measuring the wafer W before it is loaded into the coating and developing apparatus 1, but CMP (Chemical Mechanical Polishing) is performed on the periphery of the wafer W. is performed, the shape of the bevel part may change. Therefore, when CMP is performed between the manufacturing of the wafer W and the EBR process, information on the shape of the bevel part is acquired from the most recent CMP to the EBR process. It is preferable to do

By the way, the detection of the width B1 of the bevel portion B is performed for all the wafers W subjected to the EBR process, and based on the width B1 obtained for all the wafers W, the thickness of the thinner discharge nozzle 44 is It is preferable that the position is controlled in order to more reliably suppress the error between the cut width R3 and the set value. However, since the wafers W belonging to the same lot are subjected to the same processing steps, the shape of the bevel portion B3 is substantially the same. Therefore, with respect to a plurality of wafers W belonging to the same lot, for example, only the first wafer W that is initially subjected to EBR processing in the resist film forming module 3 has the bevel portion B as described above. ) is detected, and when EBR processing is performed on each wafer W belonging to the lot, the process is performed by arranging the thinner discharge nozzle 44 at a position based on the width B1.

That is, when each wafer W constituting the above-described lot L1 is subjected to EBR processing, the thinner ejection nozzle 44 is disposed at the same position to perform the processing, and each wafer W constituting the above-described lot L2 is subjected to EBR processing. In the EBR process, the thinner ejection nozzles 44 are arranged at the same position as each other so that the process is performed. By determining the position of the thinner discharge nozzle 44 for each lot in this way, the number of wafers W conveyed to the imaging module 2 and imaged is prevented from increasing. As a result, the throughput can be improved.

In addition, in detecting the width B1, the obtuse angle θ1, and the acute angle θ2 of the bevel portion B described above, instead of using the cameras 28 and 29, for example, a reflective laser displacement meter ( 74) may be used. This laser displacement meter 74 irradiates the laser vertically downward as indicated by the dotted arrow, receives the reflected light from the wafer W, and transmits a detection signal according to the received light amount to the control unit 10 . . Based on this detection signal, the control unit 10 detects a distance between the wafer W and the laser displacement meter 74 . In addition, the laser displacement meter 74 is connected to a movement mechanism (not shown), and the position to which the laser is irradiated moves along the diameter of the wafer W on the periphery of the wafer W. That is, since the control unit 10 can detect the height of each position along the diameter of the wafer W at the periphery of the surface of the wafer W, the width B1 of the bevel portion B, the obtuse angle θ1, and the acute angle θ2 can be detected.

In the above example, the module for forming the resist film R1 and the module for performing the EBR process are integrally constituted, however, the modules may be configured as different modules for each of these processes. That is, the coating and developing apparatus 1 may be configured such that, after the formation of the resist film in one module, the wafer W is transferred to a module that performs another EBR process by a transfer mechanism. In addition, this invention is not limited to what is applied to the film|membrane removal process of the periphery of the wafer W. For example, a film-forming process for forming an annular film is performed by supplying a film-forming chemical to the peripheral portion of the surface of the rotating wafer W from the thinner discharge nozzle 44 instead of the thinner, or cleaning of the annular region by supplying a cleaning liquid processing can be performed. Even in such a case, it is effective because the width of the coating film and the width of the region to which the cleaning liquid is supplied can be controlled with high precision. In the example described above, the thinner discharge nozzle 44 is shown to discharge the thinner vertically downward, but the thinner may be discharged in an oblique direction with respect to the horizontal plane. In addition, about each structure and each processing method of the apparatus mentioned above, it can deform|transform suitably or mutually combine.

(evaluation test)

Hereinafter, the evaluation test performed in connection with this invention is demonstrated.

・Evaluation test 1

The wafer W of lot L1 and the wafer W of lot L2 shown in FIG. 8 were subjected to EBR processing, and the cut width R3 was measured. As shown in Fig. 9, the set value of the cut width R3 was changed for each process. In addition, in this evaluation test 1, the correction|amendment of the position of the thinner discharge nozzle 44 based on the shape of the bevel part B mentioned above is not performed. The flow rate of the thinner discharged from the thinner discharge nozzle 44 was set to 200 mL/min, the rotation speed of the wafer W during the thinner discharge was set to 1000 rpm, and the thinner discharge time was set to 8.0 seconds. In addition, the diameter A1 of the thinner discharge nozzle 44 is 0.3 mm.

The graph of FIG. 21 shows the result of this experiment, the horizontal axis of the graph indicates the set value (unit: mm) of the cut width, and the vertical axis of the graph indicates the measured value (unit: mm) of the cut width R3, respectively. In the graph, a circle plot indicates the experimental result for lot L1, and a triangular plot indicates the experimental result for lot L2, respectively. As shown in the graph, when the set value of the cut width R3 is 0.6 mm to 0.7 mm, the set value of the cut width R3 and the cut width R3 for the wafer W of lot L1 and the wafer W of lot L2 are The measured values are approximately in agreement. As shown in Fig. 9, when the set value of the cut width R3 is within this range, when the thinner is discharged from the thinner discharge nozzle 44, the projection area R2 of the discharge port 40 is each wafer of the lot L1 and the lot L2. It does not overlap with the bevel part B of (W), or only the area|region of the slight size in the projection area|region R2 is in the state which overlapped with the bevel part B.

However, when the set value of the cut width R3 is smaller than 0.6 mm, that is, in discharging thinner to the wafer W of lot L1 and wafer W of lot L2, the projection area R2 of the discharge port 40 of the nozzle When the thinner is discharged while a relatively large area is overlapped with the bevel part (B), as shown in the graph, the deviation between the set value of cut width R3 and the measured value of cut width R3 is relatively large, and the measured value is The value is small. And, for both the wafer W of lot L1 and the wafer W of lot L2, as the set value of the cut width R3 becomes smaller, the deviation of the measured value with respect to the set value becomes larger, and the wafer W of the lot L1 becomes smaller. ), the deviation is larger for the wafer W of the lot L2.

As mentioned above from the result of this evaluation test 1, so that there are few overlaps to the bevel part B of projection area|region R2, that is, so that there is little quantity of the thinner supplied to the bevel part B, the cut width R3 It turns out that the amount of shift|offset|difference between the set value and the measured value of cut width R3 is small. That is, it was confirmed that this shift was influenced by the thinner flat portion ratio of the above formula (1). Moreover, the contribution of the reaction with respect to the resist film is low, and it is thought that the thinner supplied to the bevel part B among the projection area|region R2 is discharged|emitted rapidly. In addition, said Formula 2 is acquired based on the result of this evaluation test 1.

B: bevel part
B1: width
R1: resist film
R2: Projection Area
R3: cut width
W: Wafer
1: coating, developing device
10: control unit
2: imaging module
3: resist film forming module
30: thinner
31: spin chuck
32: rotation mechanism
44: thinner discharge nozzle
40: outlet
51: program

Claims (14)

In the liquid treatment method of performing treatment by supplying a treatment liquid to a circular substrate having a bevel portion formed along the periphery of the surface,
obtaining information on the shape of the bevel part;
then, moving a processing liquid discharge nozzle for locally discharging the processing liquid to the surface of the substrate to a processing position determined based on the obtained information on the shape of the bevel portion;
thereafter, discharging the processing liquid from the processing liquid discharge nozzle at the processing position to the rotating substrate and supplying the processing liquid to an annular region along the periphery of the substrate including the bevel portion; ,
The step of supplying the treatment liquid is performed in a state in which a projection region of the treatment liquid discharge port provided in the treatment liquid discharge nozzle on the surface of the substrate facing the treatment liquid discharge direction overlaps the bevel portion,
The processing position of the processing liquid discharge nozzle is determined by a correction amount for the initial setting position of the processing liquid discharge nozzle based on a corresponding relationship for detecting a virtual cut width calculated based on the ratio of the processing liquid flat portion of the projection area of the discharge port A liquid treatment method, characterized in that determined by calculating According to claim 1,
The shape of the bevel portion includes a width of the bevel portion, the liquid treatment method. 3. The method of claim 1 or 2,
The shape of the bevel part is characterized in that it includes the inclination of the bevel part, the liquid treatment method. 3. The method of claim 1 or 2,
The treatment liquid is a liquid treatment method, characterized in that the removal liquid for removing the film formed on the surface of the substrate. 3. The method of claim 1 or 2,
determining a treatment liquid discharge nozzle to be used from among a plurality of treatment liquid discharge nozzles having different diameters, based on information on the bevel part;
The liquid treatment method according to claim 1, wherein the step of moving the treatment liquid discharge nozzle is a step of moving the determined treatment liquid discharge nozzle to the treatment position. 3. The method of claim 1 or 2,
The liquid processing method, characterized in that the step of acquiring information on the shape of the bevel part is a process of acquiring image data by imaging the substrate, and acquiring information on the shape of the bevel part based on the image data. A liquid processing apparatus for processing by supplying a processing liquid to a circular substrate having a bevel portion formed along a periphery of a surface, the liquid processing apparatus comprising:
a substrate holding unit for holding the substrate;
a rotating mechanism for rotating the substrate held by the substrate holding unit;
a treatment liquid discharge nozzle for discharging the treatment liquid locally on the surface of the substrate;
a moving mechanism for moving the treatment liquid discharge nozzle so that the discharge position of the treatment liquid moves in a radial direction of the surface of the substrate;
obtaining information on the shape of the bevel part; moving the processing liquid discharge nozzle to a processing position determined based on information on the shape of the bevel part; and the processing from the processing liquid discharge nozzle at the processing position. a control unit for outputting a control signal to discharge the liquid and supply the processing liquid to an annular region along the periphery of the substrate including the bevel portion;
The processing liquid is discharged in a state in which a projection area on the surface of the substrate facing the discharge direction of the processing liquid in the processing liquid discharge port provided in the processing liquid discharge nozzle overlaps the bevel portion;
The control unit may be configured to calculate a correction amount for an initial set position of the treatment liquid discharge nozzle based on a corresponding relationship for detecting a virtual cut width calculated based on a ratio of the treatment liquid flat portion of the projection area of the discharge port to discharge the treatment liquid and determining the processing position of the nozzle. 8. The method of claim 7,
The shape of the bevel part includes a width of the bevel part, The liquid processing apparatus. 9. The method according to claim 7 or 8,
The shape of the bevel part is characterized in that it includes a slope of the bevel part. 9. The method according to claim 7 or 8,
The treatment liquid discharge nozzle includes a plurality of treatment liquid discharge nozzles having different diameters,
wherein the control unit outputs a control signal such that one of the plurality of treatment liquid discharge nozzles determined based on the obtained information on the bevel portion moves to the treatment position. . 9. The method according to claim 7 or 8,
a cup surrounding the substrate held by the substrate holding unit;
It is installed in the cup and includes an imaging unit for acquiring image data by imaging the bevel part,
The liquid processing apparatus, wherein the control unit acquires information on the shape of the bevel part based on the image data. A storage medium storing a computer program used in a liquid processing apparatus for supplying a processing liquid to the surface of a substrate, wherein the computer program comprises steps for executing the liquid processing method according to claim 1 or 2 Characterized in the storage medium. delete delete

Images