KR20100019318A - Coating apparatus, coating method, coating and developing apparatus and computer readable recording medium - Google Patents

Abstract

PURPOSE: A coating apparatus, a coating method, a coating developing apparatus and a recording media are provided to keep the uniformity of film thickness profile of a substrate by controlling a film thickness profile based on the number of rotation of the substrate when a coating solution is applied on the substrate. CONSTITUTION: A spin chuck(21) is composed to maintain the level of a wafer(W) by vacuum suction. The spin chuck rotates by a rotation driving unit(22). A guide ring(23) is installed in the lower part of the spin chuck. The section of the guide ring is mountain shape. A cup(24) is installed to surround the spin chuck and the guide ring and suppresses the scattering of a coating solution. An opening with bigger size than the size of the wafer is formed on the upper side of the cup in order to lift the spin chuck. An exhaust unit(26) is formed in the lower part of the cup and is connected to an exhaust pipe(26A).

Description

Coating device, coating method, coating developing device and storage medium {COATING APPARATUS, COATING METHOD, COATING AND DEVELOPING APPARATUS AND COMPUTER READABLE RECORDING MEDIUM}

BACKGROUND OF THE INVENTION Field of the Invention The present invention relates to a coating apparatus, a coating method, a coating and developing apparatus, and a storage medium for supplying a coating liquid such as a resist to a substrate such as a semiconductor wafer or an LCD substrate (glass substrate for liquid crystal display) to form a coating film. will be.

In the manufacturing process of a semiconductor device or LCD, various coating films, such as an antireflection film and a resist film, are formed by apply | coating a coating liquid to a board | substrate one by one. Application of each coating liquid is performed by spin coating, for example. This method is a method in which the substrate is horizontally adsorbed and held by a freely rotating spin chuck to supply a coating liquid for forming a desired film from a nozzle above the center portion of the substrate to the rotating center of the substrate and at the same time rotate the spin chuck. A coating liquid diffuses and a coating film is formed in the whole board | substrate.

In such spin coating, for example, when the coating liquid is supplied, the substrate is rotated at a predetermined coating rotation speed (first rotational speed), and after the supply of the coating liquid is stopped, the edge of the substrate is caused by centrifugal force. It is lower than the rotational speed at the time of application, for the purpose of making the film thickness profile uniform by uniformly gathering the coating liquid gathered on the part, that is, to form a coating film having a high uniformity in the surface of the substrate, It may decelerate by coating liquid uniform rotation speed (2nd rotation speed). After deceleration, the rotation speed of the substrate is raised to the drying speed (third rotation speed) to promote drying of the coating liquid to form a coating film. This drying rotation speed is set lower than the rotation speed at the time of application in order to suppress the scattering of the coating liquid more than necessary.

In the coating and developing apparatus which performs a process with respect to a semiconductor wafer (henceforth a wafer) as a board | substrate, development processing is performed to the coating module which is a coating apparatus which forms a coating film, such as a resist film, by the spin coating, and the said resist film. In addition to the developing module to be performed, the temperature adjusting module of the wafer may be provided. In this case, each wafer is conveyed to this temperature adjusting module before conveying to a coating module, and temperature is adjusted so that the surface may become predetermined temperature. The temperature-adjusted wafer is conveyed onto a cup for suppressing the scattering of the coating liquid, which is installed in the coating module, and is carried into the cup through an opening formed above the cup. The film is delivered to the spin chuck provided in the cup, and a coating film is formed by the spin coating.

Thus, by controlling the temperature inside the surface of each wafer constantly with the temperature adjusting module before conveying it onto the cup, unevenness such as the film thickness of the coating film is generated between the wafer surface and each wafer to prevent the yield from being lowered. That is, this temperature regulation module is provided in the coating and developing apparatus for the purpose of equalizing the coating performance of the coating module.

By the way, in the coating and developing apparatus, in order to improve the throughput, the wafers in the same lot or the wafers over the plurality of lots are continuously conveyed and processed, so that the coating process is continuously applied to the wafers in each coating module. However, when the coating process of the wafer proceeds continuously in the coating module, a solvent such as thinner contained in the coating liquid supplied to the wafer is volatilized. In addition, when a solvent is supplied in order to increase the wettability of the coating liquid on the wafer before applying the coating liquid, the solvent is also volatilized, and as a result, the volatilized solvent concentration gradually increases in the cup and on the cup. Further, when the coating process of the wafer proceeds continuously, the amount of heat generated by the rotary motor or the like included in the drive unit for rotating the spin chuck increases.

Thus, the temperature around a cup fluctuates with time, and the temperature may become nonuniform for every wafer conveyed into a cup by the solvent concentration in a cup periphery, the heat generation amount of the said rotary motor, etc. changing. Specifically, in the case where spin coating is performed by varying the rotation speed as described above, the relationship between the temperature of the wafer and the film thickness of the coating film will be described with reference to FIG. 15. In the figure, 11 is a spin chuck and 12 is an application nozzle. When the wafer W is rotated at the rotational speed during the coating (Fig. 15 (a)), volatilization of the solvent proceeds faster as the temperature of the wafer W is higher than the set temperature adjusted by the temperature adjusting module. Therefore, the fluidity | liquidity of the coating liquid L falls, As a result, even if it is the said coating liquid uniform rotation speed, the coating liquid L gathered at the peripheral part of the wafer W hardly becomes uniform. Therefore, as shown in Fig. 15B, the film thickness of the coating film M at the circumferential portion of the wafer W becomes larger than the film thickness of the central portion, and as a result, the film thickness profile (film thickness of the coating film) In-plane uniformity) becomes uneven. In addition, when the wafer W is rotated at the rotational speed during drying, the higher the temperature of the wafer W is than the set temperature, the volatilization of the solvent proceeds faster, and the average film thickness formed on the wafer W (film thickness). Average value in the plane of the substrate) increases.

When a phenomenon in which the temperature around the cup rises with time in this manner occurs, dummy wafers which are not used for the purpose of manufacturing a semiconductor device are sequentially conveyed to the application module, and the dummy wafer is processed. And after the temperature of the dummy wafer conveyed on a cup is stabilized, the countermeasure to convey a normal wafer to a coating module can be considered. However, this method has a problem that a time that cannot process a normal wafer occurs, resulting in a decrease in throughput, and a cost of a dummy wafer and a cost for processing it. By the way, although the case where the temperature of a wafer rises more than predetermined temperature at the time of forming a coating film was demonstrated, even if it is lower than predetermined temperature, the nonuniformity of a film thickness profile will become large, and the temperature of a wafer at the time of coating liquid drying will predetermine. Even if it is lower than the temperature, the average film thickness becomes uneven between wafers.

Although patent document 1 describes the coating apparatus which controls the film thickness of a coating film by controlling the rotation speed of a board | substrate, said problem is not described and it cannot solve the problem.

[Patent Document 1] Japanese Unexamined Patent Publication 2002-141273 (paragraph 0035 to paragraph 0038 and the like)

SUMMARY OF THE INVENTION The present invention has been made under such circumstances, and its object is to provide a coating apparatus capable of forming a coating film having a good film thickness profile, a coating method, a coating developing apparatus having the coating apparatus, and a program for implementing the coating method. It is to provide a storage medium.

The coating apparatus of this invention adjusts the film thickness profile of a coating film with the rotation speed of the board | substrate at the time of apply | coating a coating liquid, and then spins by rotating at lower rotation speed than the said rotation speed, and adjusts the average film thickness of a coating film. In the coating device for coating,

A substrate holding portion configured to hold the substrate horizontally and to rotate around the vertical axis by a rotating mechanism;

First temperature measuring means for measuring a temperature of the substrate held by the substrate holding portion;

The temperature measured by the first temperature measuring means before the coating treatment with respect to one substrate and the temperature measured by the first temperature measuring means before the coating treatment with respect to the subsequent substrate subjected to the coating treatment after the one substrate. Rotation for adjusting the film thickness profile of a coating film with respect to the said subsequent board | substrate based on a measured value, the rotation speed for adjusting the film thickness profile of the coating film in the coating process performed with respect to the said one board | substrate, and a predetermined constant. It is characterized by including a calculation unit for calculating the number.

The coating device includes second temperature measuring means for measuring the temperature of the substrate held by the substrate holding portion,

The calculating section includes a temperature measurement value measured by the second temperature measuring means before the coating treatment with respect to one substrate, and the second temperature measuring means before the coating treatment with respect to a subsequent substrate subjected to the coating treatment next to the one substrate. The average film thickness of the coating film with respect to the said subsequent board | substrate based on the temperature measured value measured by this, the rotation speed for adjusting the average film thickness of the coating film in the coating process performed with respect to the said one board | substrate, and a predetermined constant You may be provided with the function which calculates the rotation speed for adjustment.

In that case, the said calculating part calculates the temperature difference of the temperature measurement value of the one board | substrate measured by the 2nd temperature measuring means, and the temperature measurement value of the subsequent board | substrate measured by the 2nd temperature measuring means, for example, The difference between the rotation speed for adjusting the average film thickness of the coating film in a subsequent board | substrate and the rotation speed for adjusting the average film thickness of the coating film in one board | substrate is calculated based on the said constant, and in this case, it is said 2 temperature measuring means may measure the temperature of the center part of a board | substrate.

Further, the calculating unit calculates, for example, a temperature difference between the temperature measurement value of one substrate measured by the first temperature measuring means and the temperature measurement value of the subsequent substrate measured by the first temperature measuring means, and the temperature difference and the integer The difference between the rotation speed for adjusting the film thickness profile of the coating film in a subsequent board | substrate and the rotation speed for adjusting the film thickness profile of the coating film in one board | substrate is computed based on this. The first temperature measuring means may measure the temperature of the peripheral portion of the substrate.

The coating method of this invention adjusts the film thickness profile of a coating film with the rotation speed of the board | substrate at the time of apply | coating a coating liquid, and then spins by rotating at lower rotation speed than the said rotation speed, and adjusting the average film thickness of a coating film. In the coating method of performing a coating,

Holding one substrate horizontally and rotating around the vertical axis in the substrate holding portion;

Supplying a coating liquid to the one substrate to perform spin coating;

Measuring the temperature by the first temperature measuring means before supplying the coating liquid to one substrate held by the substrate holding portion;

A step of horizontally holding a subsequent substrate subjected to the coating treatment next to the one substrate to the substrate holding portion and rotating around the vertical axis;

Supplying a coating liquid to the subsequent substrate to perform spin coating;

Measuring the temperature by a first temperature measuring means before supplying the coating liquid to a subsequent substrate held in the substrate holding portion;

A temperature measurement for one substrate measured by the first temperature measuring means, a temperature measurement for a subsequent substrate measured by the first temperature measuring means, and application in a coating treatment performed on the one substrate And a step of calculating the rotation speed for adjusting the film thickness profile of the film and the rotation speed for adjusting the film thickness profile of the coating film on the subsequent substrate based on a predetermined constant.

The coating method of this invention is a process of measuring the temperature with a 2nd temperature measuring means, before supplying a coating liquid with respect to one board | substrate hold | maintained by the said board | substrate holding part,

Measuring the temperature by the second temperature measuring means before supplying the coating liquid to the subsequent substrate held in the substrate holding portion;

A temperature measurement for one substrate measured by the second temperature measuring means, a temperature measurement for a subsequent substrate measured by the second temperature measuring means, and application in a coating treatment performed on the one substrate And a step of calculating the rotation speed for adjusting the film thickness profile of the film and the rotation speed for adjusting the average film thickness of the coating film on the subsequent substrate based on a predetermined constant.

In the process of calculating the rotation speed for adjusting the average film thickness of the coating film in the said subsequent board | substrate,

Calculating a temperature difference between the temperature measurement value of one substrate measured by the second temperature measuring means and the temperature measurement value of the subsequent substrate,

Calculating the difference between the rotation speed for adjusting the average film thickness of the coating film on the subsequent substrate and the rotation speed for adjusting the average film thickness of the coating film on one substrate based on the temperature difference and the above constant. You may be.

In that case, for example, in the process of calculating the rotation speed for adjusting the rotation speed for adjusting the film thickness profile of the coating film in the said subsequent board | substrate,

Calculating a temperature difference between the temperature measurement value of one substrate measured by the first temperature measuring means and the temperature measurement value of the subsequent substrate,

Calculating the difference between the rotation speed for adjusting the film thickness profile of the coating film on the subsequent substrate and the rotation speed for adjusting the film thickness profile of the coating film on one substrate based on the temperature difference and the constant You may be.

The coating and developing apparatus of the present invention,

A carrier block into which a carrier containing a substrate is carried;

A processing block including an application portion for applying a resist to a surface of the substrate taken out of the carrier, a developing portion for developing the substrate after exposure;

In the coating and developing apparatus provided with the interface block which takes over a board | substrate between this process block and the exposure apparatus which exposes the board | substrate with which the resist was apply | coated,

The said coating part was provided with any one said coating apparatus, It is characterized by the above-mentioned.

A storage medium of the present invention is a storage medium for storing a computer program used in a coating apparatus for supplying a coating liquid to a rotating substrate to form a coating film,

The computer program is characterized in that a step group for carrying out the coating method is assembled.

According to the coating apparatus of this invention, the temperature measuring means which measures a temperature with respect to one board | substrate and a subsequent board | substrate is provided, respectively, These measurement temperature and the film thickness profile of the coating film in the coating process performed with respect to the said one board | substrate. The rotation speed for adjusting the film thickness profile of a coating film is computed with respect to the said subsequent board | substrate based on the rotation speed for adjusting this, and a predetermined constant. Therefore, it is suppressed that the nonuniformity of the film thickness profile of the coating film in a subsequent board | substrate becomes large by changing the temperature of the atmosphere which processes a board | substrate.

As a coating device according to an embodiment of the present invention, a resist coating device 2 will be described with reference to FIGS. 1 and 2. Fig. 1 and Fig. 2 respectively show the longitudinal plane and the transverse plane of the apparatus, and 20 in Fig. 2 is a box body, and the carry-out port 20A of the wafer W is placed on the surface facing the carry-in area of the conveyance arm which is the conveying means. Equipped with. The carry-in / out port 20A is opened and closed by the shutter 20B. In the box 20, the spin chuck 21 which forms a board | substrate holding part is provided.

The spin chuck 21 is configured to hold the wafer W horizontally by vacuum suction, and can be rotated around the vertical by the rotary drive unit 22 which is a rotating mechanism including a rotating motor and the like. It is supposed to be. Further, a guide ring 23 having a cross-sectional shape is provided below the spin chuck 21, and the outer circumferential edge of the guide ring 23 is bent downward. The cup 24 for suppressing the scattering of the resist liquid as the coating liquid is provided to surround the spin chuck 21 and the guide ring 23.

The cup 24 has an opening larger than the wafer W so as to elevate the spin chuck 21 on the upper surface, and forms a discharge path between the side circumferential surface and the outer circumferential edge of the guide ring 23. The gap 25 is formed. The lower part of the said cup 24 forms the gas-liquid separation part by forming the curved path with the outer peripheral edge part of the guide ring 23. As shown in FIG. In addition, an exhaust port 26 is formed in an inner region of the bottom of the cup 24, and an exhaust pipe 26A is connected to the exhaust port 26. In addition, a drain port 27 is formed in the outer region of the bottom of the cup 24, and a drain tube 27A is connected to the drain port 27.

Moreover, the resist coating apparatus 2 supplies a solvent, for example thinner, to the resist liquid nozzle 31 which is a coating liquid nozzle for supplying a resist liquid to the center part of the wafer W surface, and the center part of the wafer W surface. The solvent nozzle 41 for this is provided. The thinner is supplied to perform a pre-wet process for improving the wetness of the resist liquid on the wafer W. As shown in FIG. The resist liquid nozzle 31 is connected to a resist supply source 33 for supplying a resist liquid through the resist supply pipe 32. The resist supply pipe 32 is provided with a supply device group 34 including a valve, a flow rate adjusting unit, and the like. The solvent nozzle 41 is connected to a solvent supply source 43 for supplying thinner through the solvent supply pipe 42. The solvent supply pipe 42 is provided with a supply device group 44 including a valve, a flow rate adjusting unit, and the like.

Moreover, the resist liquid nozzle 31 is connected to the movement mechanism 36 via the arm 35 extended in the horizontal direction, as shown in FIG. The arm 35 is moved from the waiting area 37 provided on the outside of one end side (right side in FIG. 2) of the cup 24 along the guide rail 30 provided along the transverse direction by the moving mechanism 36. It is comprised so that it can move toward a short side and can move to an up-down direction. Moreover, the said solvent nozzle 41 is connected to the moving mechanism 46 via the arm 45 extended in the horizontal direction similarly to the resist liquid nozzle 31. The arm 45 can move toward one end from the standby region 47 provided on the outside of the other end side (left side in FIG. 2) of the cup 24 along the guide rail 30 by the moving mechanism 46. It is configured to move in the vertical direction at the same time.

On the cup 24, rod-shaped radiation thermometers 51 and 52 which are, for example, temperature measuring means are provided. The radiation thermometer 51 is provided at a position near the center slightly from the circumferential end of the wafer W placed on the spin chuck 21, and the center and the wafer W of the radiation thermometer 51 indicated by L in the figure. The distance of the periphery end of) is 3 mm, for example. And the radiation thermometer 51 measures the temperature of the peripheral part of the wafer W below it. The radiation thermometer 52 is provided so that the center thereof and the center of the wafer W placed on the spin chuck 21 coincide with each other, and measure the temperature of the center portion of the wafer W. Electrical signals corresponding to the temperatures measured by these radiation thermometers 51 and 52 are transmitted to the controller 6 described later. As will be described later, the radiation thermometer 51 determines the rotation speed of the wafer W at the time of resist application, and the radiation thermometer 52 determines the rotation speed at the time of drying the wafer W after resist application. It is installed.

In addition, the resist coating device 2 is provided with a control unit 6 made of, for example, a computer for controlling a series of operations of the device 2 described later, and the program 61 stored in the control unit 6. ) Is configured to control the operation of the rotary drive unit 22, the supply device group 34, 44, and the like. The program 61 is stored in a storage medium such as a flexible disk (FD), a memory card, a compact disk (CD), a magnet optical disk (MD), a hard disk, and installed in the control unit 6, for example. The installed program 61 is stored and read in the program storage part 62 of the control part 6, and performs each step mentioned later.

3 shows the configuration of the controller 6. In the figure, 60 is a bus, and the bus 60 is connected to the program 61, the CPU 63, the work memory 64, the memory 65, and the input means 66 constituting the control unit 6. . In addition, the rotation drive unit 22 and the radiation thermometers 51 and 52 of the resist coating device 2 are connected to the bus 60.

Here, in order to demonstrate the structure of each part of the control part 6 in detail, the process by this resist coating apparatus 2 is outlined. As described in the background art section, when applying the resist liquid to the wafer W, the resist coating device 2 rotates the wafer W at a rotational speed during application of a predetermined resist, thereby providing a wafer W. Spin coating for spreading the resist liquid supplied to the center portion of the wafer W by the centrifugal force, and after applying the resist liquid, the resist liquid is made uniform so that the film at the circumferential edge portion of the wafer W is removed. In order to suppress swelling, the rotation speed of the spin chuck 21 is lowered and rotated at any predetermined resist liquid uniform rotation speed. Thereafter, the resist liquid is dried by rotating at a predetermined rotation speed during drying of a predetermined resist which is increasing the rotational speed of the spin chuck 21 to form a resist film.

The graph of the solid line of FIG. 4 shows an example of the process of the _first wafer W (wafer W ₁ ) of the wafer W continuously conveyed to the resist coating device 2. The rotation speed at the time of resist application, the uniform rotation speed of the resist liquid, and the rotation speed at the time of resist drying are set to 2000 rpm, 100 rpm, and 1500 rpm, respectively.

By the way, as described above, the coating process is continued to fluctuate the temperature around the cup 24 and the volatilization rate of the solvent contained in the resist liquid supplied for each wafer W fluctuates. When the temperature of the wafer W deviates from a predetermined predetermined temperature when the coating process is performed at the rotational speed during the resist coating, the fluidity of the resist liquid is changed by the volatilization rate of the solvent, and the resist liquid The uniform rotation speed changes the degree to which the resist liquid becomes uniform in the plane of the wafer W, resulting in unevenness in the thickness of the resist film at the peripheral and central portions of the wafer W, resulting in deterioration of the profile. In addition, when the wafer W is rotated at the resist drying rotation speed to perform a drying process of the resist, if the temperature of the wafer W deviates from any predetermined set temperature, the volatilization rate of the solvent is changed, The average film thickness of the resist film fluctuates for each wafer (W).

However, the volatilization rate of the solvent in the resist liquid depends on the rotational speed of the wafer at each step of the coating process in addition to the temperature around the cup, and specifically, the rotational speed of the wafer W at each of the resist coating and the resist drying The higher, the more the volatilization rate of the said solvent is suppressed. Accordingly, in the resist coating unit (2), the wafer W ₁ after the resist coating unit (2) continues to n + 1 th to be conveyed wafer (n is one or an arbitrary integer) (W) [hereinafter wafer to W _{n +1} ], and conveyed to temperature Tb _{n + 1} (degreeC) measured by the radiation thermometer 51 with respect to the wafer W _{n + 1} , and to the resist coating apparatus 2 immediately before it. the n and calculates the wafer (W) _n difference ΔTb (℃) of the temperature Tb _n (℃) measured by the radiation thermometer (51) in the same manner with respect to the hereinafter wafer W as the substrate is _n] of the piece. And when applying a coating process to wafer _{Wn + 1} , based on the temperature difference (DELTA) Tb _n, in order to prevent the fluctuation of the volatilization rate of a solvent by the temperature difference, and to cancel the influence on the in-plane distribution of a coating film. The application correction rotation speed (offset) ΔY _n (rpm) to be added to the application rotation speed of the wafer W _n is determined.

And the number of rotations determined correction ΔY _n (rpm) and the wafer W _n is applied during the rotation number Y _n (rpm) rotational speed during application of the wafer W _{n + 1} on the basis of Y _{n + 1} (rpm) of this is determined, and that A resist coating process is performed on the wafer W _{n + 1} at the determined rotational speed. By changing the recipe of the rotational speed at the time of coating for each wafer W in this way, the volatilization degree of the solvent when rotating the wafer W at the rotational speed at the time of coating is set as appropriate, and the film thickness profile of a resist is adjusted. Improve.

In the resist coating unit (2), while processing the wafer W _{n + 1,} and the temperature Ta _{n + 1} (℃) measured by the radiation thermometer (52) with respect to the wafer W _{n + 1,} the right The difference ΔTa _n (° C.) from the temperature Ta _n (° C.) measured by the radiation thermometer 52 is similarly calculated with respect to the wafer W _n conveyed to the resist coating device 2 before. At the time of carrying out the drying process of the wafer W _{n + 1} based on the temperature difference ΔTa _n , in order to prevent the fluctuation of the volatilization rate of the solvent due to the temperature difference, the drying time added to the drying speed of the wafer W _n is added. Determine the correction speed (offset) ΔX _n (rpm). Then, the correction rotation speed on the basis of the ΔX _n and wafer W _n revolutions during drying X _n (rpm) of it is determined that the wafer W _{n +} the number of revolutions when dry of _{1 X n + 1 (rpm)} , the determined rotation The drying treatment is carried out with water. Thus, by changing the recipe of the rotation speed at the time of drying every wafer W, the volatilization degree of a solvent is made appropriate between wafers W, and the nonuniformity of the average film thickness of each resist film is prevented.

Returning to the configuration of the control unit 6 described, the work memory 64, the radiation thermometer each wafer W ₁ sent from 51 to the wafer W _{n +} a temperature of each of the peripheral parts of ₁ Tb ₁ ~Tb _{n + 1} (℃), and the temperature Ta ₁ ~Ta _{n + 1} of the respective center of each wafer W ₁ ~ wafer W _{n + 1} sent from the radiation thermometer 52 is stored. In addition, the above various calculations are made based on these temperatures Tb _{1 to} Tb _{n + 1} and temperatures Ta _{1 to} Ta _{n + 1} . In the work memory 64, various calculations are made, and each calculation value such as the temperature difference, the rotation speed at the time of application, the rotation speed at the time of drying and the correction rotation speed is stored.

In the memory 65, the correlation coefficient Kb (rpm / ° C) representing the relationship between the temperature difference ΔTb _n and the change in rotational speed for calculating the correction rotational speed ΔY _n at the time of application and the correction rotational speed ΔX _n at drying The correlation coefficient Ka (rpm / ° C) showing the relationship between the temperature difference ΔTa _n and the change in the rotational speed for calculation is stored.

The input means 66 is comprised by a keyboard etc., for example, The rotation speed Y ₁ at the time of application | coating on the wafer W ₁ of the said head (1st sheet), and the rotation speed X ₁ at drying, for example, are arbitrarily selected by a user. It is set via this input means, and the setting value of those rotation speed is memorize | stored in the said work memory 64.

Subsequently, the operation of the resist coating apparatus 2 will be described with reference to Figs. 4 and 5 to 8 described above. In this example, the values of the correlation coefficients Ka and Kb are set to 100, respectively, and the processing is continuously performed on 25 wafers W in the same lot. 4 is a graph showing the relationship between the treatment time and rotation with respect to the resist coating unit (2) 1 to 3 th wafer (W) of the piece to be conveyed in turn on, Figure 5 is for a wafer (W ₁₎ of the first 6 is a flowchart showing a processing step, and FIG. 6 is a flowchart showing a processing step for subsequent wafers W _{2 to} W ₂₅ . 7 and 8 are process charts showing how a resist film is formed on the wafer W. FIG.

The rotational speed Y ₁ and the rotational speed X ₁ at the time of application | coating on the wafer W ₁ at the head of a lot are first set by the user of an apparatus via the input means 66, respectively. Here, the rotational speed Y ₁ at the time of application and the rotational speed X ₁ at the time of drying are set to 2000 rpm and 1500 rpm, respectively. Each after the speed setting to, for example, by the temperature adjustment module is installed on the front end of the resist coating unit (2), for example, not have a 23 ℃ wafer (W _1), the temperature is adjusted illustrated transport mechanism It is conveyed to the resist coating unit (2) by, Figure 7 (a), (b) a lowered after the suction to the back surface center portion of the wafer (W ₁₎ by the spin chuck 21 is raised, as shown in, the cup The wafer W ₁ is conveyed to the processing position for performing the coating process in 24 (step S1).

The wafer (W ₁₎ that when moved to the processing position, the radiation thermometers 51 and 52 are the temperature Ta of the central temperature Tb _{1 1,} the wafer (W _1), the peripheral portion of the wafer (W ₁₎ at the bottom of the sensor Each is measured (step S2), and the electric signal corresponding to the measured value is transmitted to the control part 6. The temperatures Ta ₁ and Tb ₁ are stored in the work memory 64.

Subsequently, at a time t1 after a predetermined time has elapsed since the wafer W moves to the processing position, a control signal is transmitted from the controller 6 to the rotation driver 22, and the spin chuck 21 starts rotation. At the same time, the rotational speed increases and the solvent nozzle 41 moves from the standby region 47 onto the center portion of the wafer W ₁ (FIG. 8A). And for example, at the time t2 has elapsed the predetermined time from the rotational speed increase are time t1, the thinner 40 from the solvent nozzle 41 is supplied to the center of the wafer (W _1), the wafer by spin coating (W ₁₎ After being applied to the whole, the supply of the thinner 40 is stopped, the solvent nozzle 41 moves from the center of the wafer W ₁ to the standby region 47, and the resist liquid nozzle 31 moves to the standby region. Moving from 37 to the center of the wafer W ₁ (FIG. 8B), when the rotational speed of the wafer W ₁ reaches 2000 rpm at the set rotational speed Y ₁ , the rotational speed is maintained.

At time t3 after a predetermined time has elapsed from time t2, the resist liquid R is supplied onto the center of the wafer W ₁ (FIG. 8C), and the wafer W ₁ to which the thinner 40 is supplied by spin coating. spread on the surface, is applied to the entire wafer (W ₁₎ (step S3). The supply of the resist liquid R stops at a time t4 after a predetermined time has elapsed from the time t3, and the rotation speed of the wafer W ₁ decreases at a time t5 after the predetermined time has elapsed from t4 to 100 rpm, which is a uniform resist liquid rotation speed. maintain. Then, the resist solutions (R) assembled much in the peripheral part of the wafer (W1) is made uniform, is flattened in the plane of the wafer (W ₁₎ (Fig. 8 (d)).

When the rotation speed of the wafer W ₁ rises at a time t6 after a predetermined time has elapsed from the time t5 and reaches 1500 rpm at the set drying speed X ₁ , the rotation speed is maintained, and volatilization of the solvent contained in the resist liquid R is performed. Then, a resist film is formed (step S4), the rotation speed decreases at time t7 after a predetermined time has elapsed from time t6 thereafter, the rotation of the wafer W1 is stopped, and the wafer W is unloaded by a conveyance mechanism (not shown). ₁ ) is carried out from the resist coating device 2.

Subsequently, the second and subsequent wafers W _{n + 1} (n ≧ ₁ ) are conveyed to the resist coating device 2 in sequence. The wafer W _{n + 1} will be described with respect to the treatment step of the wafer W _{n + 1} with the focus on the differences from the processing step of the wafer W _1, therefore, it has the process in the same manner as the wafer W _1. When the wafer W _{n + 1} is handed over to the spin chuck 21 (step S5), and the wafer W _{n + 1} moves to the processing position, the radiation thermometers 51 and 52 move around the wafer W _{n + 1} . The negative temperature Tb _{n + 1} and the temperature Ta _{n + 1} at the center of the wafer W _{n + 1} are respectively measured (step S6), and an electrical signal corresponding to the measured value is transmitted to the control unit 6, and the work memory 64 The temperatures Tb _{n + 1} and Ta _{n + 1} are stored.

Control unit 6, the stored wafers W _{n +} temperature around the edges of the parts of the _first temperature Tb _{n + 1} (℃) and the wafer W _{n + 1} immediately peripheral edge of the front of the wafer W _n received the treatment with the device portion of the Tb _n primary _{Tb n + 1 -Tb n = ΔTb} n (℃) the operation (step S7), since, _n · ΔTb to calculate the Kb, obtains the operation hit may correction rotation upon application ΔY _n (rpm) (step S8). Then, the control unit 6, the correction rotation speed and adding the ΔY _n to Y _n the number of rotations during application of the wafer W _n, the addition determination value wafer as the number of revolutions during application Y _{n + 1} of the W _{n + 1} The data is stored in the work memory 64 (step S9).

Then the control portion 6, the stored wafer temperature at the center of the W _{n + 1} Ta _{n + 1} (℃) and the wafer W _{n +} immediately before the temperature of the center of the wafer W _n received the treatment with the device of ₁ Ta _n Calculate the difference Ta _{n + 1} -Ta _n = ΔTa _n (° C.) (step S10), and then calculate ΔTa _n · Ka to obtain the corrected drying speed ΔX _n (rpm) as the calculated value (step S10). S11). Then, the control unit 6, by adding the rotational speed ΔX _n correction during the drying of the number of X _n rotation during drying of the wafer W _n, the addition value of the number of revolutions during drying of the wafer W _{n + 1} X _{n + 1} As shown in FIG. 2, it is determined and stored in the work memory 64 (step S12).

Then, the control signal corresponding to the rotational drive 22 from the control unit 6 can be determined that the rotation is transmitted, the same processing as processing performed on the wafer W ₁ at time t1~t7 made. However, when the resist liquid is applied, the wafer W _{n + 1} is rotated at the determined rotational speed Y _{n + 1} , the resist liquid is supplied to apply the coating process (step S13), and the resist is uniformly applied. To this end, after the rotation speed decreases, when the resist drying is performed, the rotation speed rises to the determined drying rotation speed X _{n + 1} , and a resist drying process is performed (step S14).

Specifically, the processing process of the second wafer W ₂ will be described. When the second wafer W ₂ is conveyed to the resist coating apparatus 2, is turned over to the spin chuck 21, and moved to the processing position, the radiation thermometers 51 and 52 move around the wafer W ₂ . The temperature Tb _{2 of the} edge portion and the temperature Ta ₂ of the center portion of the wafer W ₂ are respectively measured, and an electrical signal corresponding to the measured value is transmitted to the controller 6, and the temperatures Tb ₂ and Ta are transmitted to the work memory 64. ₂ is remembered. When the Tb ₂ and Ta ₂ W ₂ of the wafer described as a 23.5 ℃, Tb ₁ and Ta ₁ are 23 ℃ of the wafer W _1, the control portion _{6, ΔTb 1 = Tb 2 -Tb 1} = calculating the 23.5 to 23 , and that the calculated value of 0.5 (℃) and Kb 100 the value of (rpm / ℃) may correction rotation upon application, becomes multiplied determine ΔY ₁ to 50rpm. The correction rotation speed is added to the rotational speed 2000 rpm during the application of the wafer W ₁ , and the calculated value 2050 rpm is determined as the rotational speed Y ₂ during the application of the wafer W ₂ , and stored in the work memory 64.

Subsequently, the control unit 6 calculates ΔTa ₁ = Ta ₂ -Ta ₁ = 23.5-23, multiplies the calculated value 0.5 (° C) by 100 of Ka (100 (rpm / ° C)), and adjusts the drying correction amount ΔX _1. Determine 50 rpm. The correction amount is added to the rotational speed 1500rpm of the wafer W ₁ , and the calculated value 1550rpm is determined as the rotational speed X ₂ of the wafer W ₂ , and stored in the work memory 64.

In FIG. 4, the dashed-dotted line shows the relationship between the rotation speed of the wafer W ₂ and the time, and as shown in this figure, when the time t1 is reached, the spin chuck 21 rotates at the determined coating speed of 2050 rpm. It accelerates so that it may become, and after rotation speed will be 2050rpm, the resist liquid R application | coating is performed at the time t2. After the application of the resist liquid R is completed, the rotation speed is reduced to 100 rpm in the same manner as the wafer W _1, and the resist liquid R becomes uniform, and then accelerated to 1550 rpm at which the rotation speed is determined at time t6. Rotation is maintained at the rotational speed, and the resist liquid R of the wafer W ₂ is dried to form a resist film. Thereafter, the wafer W ₂ is carried out from the resist coating device 2.

Subsequently, the processing process of the _third wafer W ₃ will be described. Wafer temperature of the third piece (W _3), the periphery of the treatment received by going to neomgyeojyeo the spin chuck 21 is located, the radiation thermometers 51 and 52 wherein the wafer (W ₃₎ of the portion Tb _3, the wafer W ₃ The temperatures Ta ₃ at the center are respectively measured, and electric signals corresponding to the respective measured values are transmitted to the controller 6, and the temperatures Tb ₃ and Ta ₃ are stored in the work memory 64. If these temperature described as being a Tb _3, Ta ₃ is 23.8 ℃, 23.9 ℃ respectively, control unit _{6, ΔTb 2 = Tb 3 -Tb 2} = calculating a 23.8 to 23.5, and that the calculated value of 0.3 (℃) and multiplied by 100 (rpm / ℃) which is the value of Kb, and determines the number of Y ₂ △ correction rotation upon application to 30rpm. The corrected rotational speed is added to the rotational speed 2050 rpm of the application of the wafer W ₂ , and the calculated value 2080 rpm is determined as the rotational speed Y ₃ of the application of the wafer W ₃ , and stored in the work memory 64.

Subsequently, the control unit 6 calculates ΔTa ₂ = Ta ₃ -Ta ₂ = 23.9-23.5, multiplies the calculated value of 0.4 (° C) by 100 of Ka (100 (rpm / ° C)), and applies the corrected rotation speed at the time of application. Determine ΔX ₂ at 40 rpm. The correction rotation speed is added to the drying speed 1550 rpm of the wafer W ₂ , and the calculated value 1590 rpm is determined as the drying speed X ₃ of the wafer W ₃ , and stored in the work memory 64.

In Fig. 4, the dashed-dotted line shows the relationship between the rotational speed of the wafer W ₃ and the time. As shown in this figure, when the time t1 is reached, the spin chuck 21 is set to have the determined rotational speed of 2080 rpm. Acceleration and rotation speed become 2080 rpm, and the resist liquid R application | coating is performed at time t2. After the rotation speed is further lowered to 100 rpm to make the resist liquid R uniform, the rotation speed is increased to 1590 rpm at which the rotation speed is determined, and the resist liquid R is dried to form a resist film.

After the wafer W _3, W ₄ is a wafer process in Step S5~S14 running each against the last wafer of the lot (W _25), each of these wafers W ₄ ~W ₂₅ in the same process and the wafer W _2, W ₃ for the Is done. Further, the wafer W _1, so that the temperature rises in ~W _3, the value of each correction rotation speed is a, the correction rotation speed when the temperature is lowered, but a positive value between the wafer (W) is a negative value, The negative value is added to the rotational speed during application and the rotational speed during drying of the wafer W immediately before it.

According to this resist coating apparatus 2, with respect to the wafer W conveyed after the 2nd sheet in the same lot, the temperature of the wafer W measured with the radiation thermometer 51, and the wafer W The rotation speed at the time of resist coating is determined according to the temperature difference of the temperature of the wafer W conveyed to the resist coating apparatus 2 immediately before, and the coating process is performed. Therefore, even if the temperature around the cup 24 changes by the volatilization of the solvent around the cup 24, the change of the calorific value of the rotation drive part 22, etc., the temperature changes for every wafer W conveyed accordingly, Since degradation of the film thickness profile of the resist film of the wafer W is suppressed, the fall of a yield can be suppressed. In addition, according to this method, it is not necessary to carry the dummy wafer and perform processing thereon, so that the processing time of one lot is long and the throughput can be prevented from decreasing. In addition, it is possible to prevent an increase in cost by using a dummy wafer as such.

Moreover, according to this resist coating apparatus 2, with respect to the wafer W conveyed after the 2nd sheet, the temperature of the wafer W measured by the radiation thermometer 52, and the bar W of the wafer W The rotation speed at the time of resist drying is determined according to the temperature difference of the temperature of the wafer W conveyed to the said resist coating apparatus 2 previously, and the drying process is performed. Therefore, since the nonuniformity of the average film thickness between the wafers W is suppressed, the fall of a yield can be suppressed.

By the way, when the resist is applied, in particular, if the temperature of the peripheral edge of the wafer W is high, drying of the resist liquid proceeds at the peripheral edge, resulting in low fluidity of the resist liquid and deterioration of the film thickness profile of the resist film. . In other words, since the temperature of the peripheral edge of the wafer W affects the film thickness profile of the resist film, the radiation thermometer 51 is configured to measure the temperature of the peripheral edge of each wafer W as in the above-described embodiment. The resist film having a higher in-plane uniformity can be formed by calculating the temperature difference between the edge portions thereof.

In addition, the temperature of the center portion of the wafer W most affects the average film thickness of the resist film. Therefore, in said embodiment, the center part of the wafer W is measured by the radiation thermometer 52, and the rotation speed at drying is determined based on the measurement result. Thus, by determining the rotational speed during drying based on the temperature of the center portion of the wafer W, it is preferable because the uniformity of the average film thickness between the wafers W can be performed with high accuracy. However, it is not limited to determining the correction rotation speed at the time of application and the correction rotation speed at the time of drying based on the temperature difference of the circumferential edge of the wafer W and the temperature difference of the center as described above. The correction rotation speed at drying and the correction rotation speed at the time of application may be determined based on the temperature difference of?

In addition, after supplying the coating liquid as in the above example, the rotation speed of the wafer W is lowered, and after that, the rotation speed is lowered after supplying the coating liquid instead of increasing the drying speed of the resist. In addition, the resist may be dried, and at the same time, the rotation may be continued at a rotational speed at which the resist can be made uniform. In the above example, the same lot is processed, but the wafers W of a plurality of lots may be processed continuously.

Hereinafter, the coating and developing apparatus 7 in which the resist coating apparatus 2 is assembled will be described. FIG. 9 shows a plan view of a resist pattern forming system in which the exposure apparatus C4 is connected to the coating and developing apparatus 7, and FIG. 10 is a perspective view of the same system. 11 is a longitudinal cross-sectional view of the same system. Carrier block C1 is provided in this coating and developing apparatus 7, and the dispensing arm 72 takes out the wafer W from the sealed carrier 70 placed on the mounting base 71 and processes it. It is settled by the block C2, and it is comprised so that the delivery arm 72 may receive the processed wafer W and return to the carrier 70 from the process block C2.

As shown in Fig. 10, the processing block C2 is a block for forming a first block (DEV layer) B1 for developing and a anti-reflection film formed under the resist film. 2nd block (BCT layer) B2, the 3rd block (COT layer) B3 for apply | coating a resist film, and the 4th block (ITC layer) for forming an anti-reflective film formed in the upper layer side of a resist film. (B4) is laminated | stacked in order from the bottom, and it is comprised.

Since each layer of the processing block C2 is configured in the same manner in plan view, the third block (COT layer) B3 will be described as an example. The COT layer B3 is a resist film for forming a resist film as a coating film. Shelf units U1 to U4 constituting a forming module 73, a heating and cooling system processing module group for performing pretreatment and post-treatment of the processing performed in the resist film forming module 73, and the resist film It is comprised between the formation module 73 and the processing module group of a heating and cooling system, and is comprised by the conveyance arm A3 which receives the wafer W between them. The resist film forming module 73 has a structure in which three coating portions 74 corresponding to the resist coating device 2 are provided in a common box.

The shelf units U1 to U4 are arranged along the conveyance region R1 to which the conveying arms A3 are moved, and are configured by stacking the above heating modules and cooling modules, respectively. The heating module has a heating plate for heating the placed wafer, and the cooling module has a cooling plate for cooling the placed wafer.

As for the second block (BCT layer) B2 and the fourth block (ITC layer) B4, an antireflection film forming module and a protective film forming module corresponding to the resist film forming module are provided, respectively. The chemical liquid for forming an antireflection film and the chemical film for forming a protective film are respectively applied to the wafer W as a coating liquid, and the same configuration as the COT layer B3.

In the first block (DEV layer) B1, a developing module corresponding to a resist film forming module is stacked in two stages in one DEV layer B1, and heating for pre- and post-treatment of the developing module is performed. The shelf unit which comprises the processing module group of a cooling system is provided. In the DEV layer B1, a transfer arm A1 for conveying the wafer W is provided to the two-stage developing module and the heating / cooling processing module. In other words, the transfer arm A1 is commonly used for the two-stage developing module.

The processing block C2 is further provided with a shelf unit U5 as shown in FIGS. 9 and 11, and the wafer W from the carrier block C1 is flipped over by one of the shelf units U5. The unit, for example the second block (BCT layer) B2, is in turn conveyed to the corresponding take-back unit CPL2. The conveyance arm A2 in the 2nd block (BCT layer) B2 receives the wafer W from this hand over unit CPL2, and each unit (anti-reflective film formation module and processing unit group of a heating and cooling system). The antireflection film is formed on the wafer W in these units.

Thereafter, the wafer W is conveyed to the dumping unit BF2 of the shelf unit U5, the dumping arm D1, and the dumping unit CPL3 of the shelf unit U5, and thereafter, for example, 23 ° C. After furnace temperature is adjusted, it is carried in to 3rd block (COT layer) B3 through conveyance arm A3, and the resist film is formed by the resist film formation module 73. As shown in FIG. Further, the wafer W is received by the conveying unit BF3 at the shelf unit U5 via the conveying unit BF3 → the conveying arm D1 of the conveying arm A3 → the shelf unit U5. Is passed. On the other hand, in the wafer W in which the resist film was formed, a protective film may be further formed in the fourth block (ITC layer) B4. In this case, the wafer W is delivered to the conveying arm A4 through the conveying unit CPL4 and formed into a protective film, and then conveyed to the conveying unit TRS4 by the conveying arm A4.

On the other hand, in the upper part in DEV layer B1, the conveyance dedicated for conveying the wafer W directly from the sum unit CPL11 provided in the shelf unit U5 to the sum unit CPL12 provided in the shelf unit U6. The shuttle arm 75 which is a means is provided. The wafer W on which the resist film or the protective film is further formed is received from the delivery units BF3 and TRS4 through the delivery arms D1 and is passed to the delivery unit CPL11, from which the shuttle arm 75 ) Is directly conveyed to the catching unit CPL12 of the shelf unit U6, and is received by the interface block C3. On the other hand, the flipping unit with CPL in Fig. 11 serves as a cooling unit for temperature adjustment, and the flipping unit with BF serves as a buffer unit on which a plurality of wafers W can be placed.

Then, the wafer W is conveyed to the exposure apparatus C4 by the interface arm 76, and after the predetermined exposure processing is performed, the wafer W is placed on the flipping unit TRS6 of the shelf unit U6 to process the block. Return to (C2). The returned wafer W is subjected to development in the first block (DEV layer) B1, and is conveyed to the delivery unit TRS1 of the shelf unit U5 by the transfer arm A1. Thereafter, the return arm 72 returns to the carrier 70. In addition, in FIG. 11, U1-U4 is a thermal system group which laminated | stacked the heating part and the cooling part, respectively. In the above example, the resist coating apparatus 2 described above is applied to the resist film forming module 73, but the anti-reflection film forming module of the BCT layer B2 corresponding to the resist film forming module 73 which is a liquid processing unit, The resist coating device 2 may be applied to the protective film forming module of the ITC layer B4, respectively, to control the film thickness of the antireflection film and the film thickness of the protective film.

EXAMPLE

(Example 1)

Resist film was formed according to the wafer W ₁ ~ the order of the embodiments described above with respect to the wafer W ₂₅ of the same lot by using a resist coating device (2) in. Then, a predetermined plurality of resist film thicknesses were measured in the plane of each wafer W, and the average value, that is, average film thickness, was calculated for each wafer W. The results of this experiment are shown in FIG. 12, and the horizontal axis of the graph in the figure is the number of the wafers W, and corresponds to the order in which the process of the resist coating apparatus 2 was performed. The vertical axis of the graph shows the calculated average film thickness. The result of this Example 1 is shown by the square plot, and as shown by each square plot, the value of the average film thickness between each wafer W becomes substantially the same.

(Comparative Example 1)

Wafer of the same lot as in Example 1 using the conventional resist coating device ₁ ~ W to form a resist film to the wafer W _25. In this conventional resist coating apparatus, the rotation speed at the time of application and the rotation speed at the time of drying are constant without changing for each wafer (W). The results of this experiment are shown in a round plot in FIG. 12. As each round plot is shown, in Comparative Example 1, the average film thickness of the wafer W tends to be larger as it is treated later. . In addition, the value of the average film thickness is largely larger in Example 1 and Comparative Example 1 as the wafer W processed later.

Therefore, by using the resist coating apparatus 2 from the result of Example 1 and the comparative example 1, when carrying out the coating process to the wafer W continuously, the raise of the value of the average film thickness of a resist can be suppressed, and a wafer It was shown that the uniformity of the average film thickness between (W) can be made high.

(Example 2)

Wafer of the same lot as in Example 1 by using a resist coating device (2) in ~ W ₁ to form the embodiment of the above-described with respect to the wafer W ₂₅ Therefore, the resist film. Then, a predetermined plurality of resist film thicknesses were measured in the plane of each wafer W, and the 3σ (sigma) was calculated. The smaller the value of 3σ, the better the film thickness profile, that is, the smaller the nonuniformity. Each bar graph shown by oblique lines in FIG. 13 shows 3σ of each wafer W obtained by the experiment of Example 2, in the order of the wafers W processed in the resist coating apparatus 2. It is shown from left to right.

(Comparative Example 2)

Wafer of the same lot as in Comparative Example 1 using the conventional resist coating device ₁ ~ W film was formed with the resist to the wafer W _25. And similarly to Example 2, the resist film thickness of several predetermined | prescribed places was measured in the surface of each wafer W, and 3 (sigma) was computed. In FIG. 13, a bar graph for each wafer W in this comparative example 2 is shown on the left side of the bar graph for each wafer W of Example 2, in order to distinguish it from the bar graph of Example 2. The bar graph of this comparative example 2 has shown many sticking points.

Compared to the wafer W ₁ ~ W wafer in Comparative Example 2 and each of Examples 2 to _25, and most of the comparative example 2 has larger value than the 3σ to the second embodiment. In Comparative Example 2, the value of 3σ tends to increase as the wafer W processed to the rear side, but in Example 2, the value of 3σ is relatively uniform among the wafers W, and For W), the value of 3σ is largely reduced in Example 2 and Comparative Example 2.

Therefore, by using the resist coating apparatus 2 from the result of these Example 2 and the comparative example 2, the nonuniformity of the film thickness profile of the wafer W can be suppressed at the time of performing a continuous coating process, especially the back of a lot In the wafer W, it was found that this nonuniformity was effectively suppressed.

(Example 3)

Wafer of the same lot as in Example 1 by using a resist coating device (2) in ~ ₁ W was formed in the embodiment described above with respect to the wafer W ₂₅ Therefore, the resist film. And the film thickness of each position in the radial direction of each wafer W was measured. Fig. 14A is a graph showing the measurement results, in which the horizontal axis of the graph shows the distance (mm) from the center of the wafer W, and the vertical axis of the graph shows the film thickness (nm), respectively. In the graph, the results for wafer W ₁ , wafer W ₁₀ and wafer W ₂₅ are shown as plots of square, white circle and black circle, respectively.

(Comparative Example 3)

Wafer of the same lot as in the Comparative Example 2 using the conventional resist coating device ₁ ~ W film was formed with the resist to the wafer W _25. And the film thickness of each position in the radial direction of each wafer W was measured. Fig. 14B is a graph showing the measurement results, in which the horizontal axis of the graph shows the distance (mm) from the center of the wafer W, and the vertical axis of the graph shows the film thickness (nm), respectively. In the graph as in Example 3, the results for the wafer W ₁ , the wafer W ₁₀ , and the wafer W ₂₅ are shown as plots of squares, white circles, and black circles, respectively.

By comparing the result of Example 3 with the result of Comparative Example 3, in Example 3, the variation in the film thickness of the wafer W ₁ , the wafer W ₁₀ , and the wafer W ₂₅ was smaller than that of Comparative Example 3, and the wafer W _1, the wafer W _10, small difference in thickness between the wafers W _25. On the other hand, the graph of Fig. 14 (a) (b) shows the results of the three wafers (W) of the wafer W ₁ , the wafer W ₁₀ , the wafer W ₂₅ for convenience of illustration. ), And the variation of the film thickness in the plane is small and large between the wafers W as in the case of the wafer W not shown in the graph in Example 3 as in the wafer W shown in the graph. The car was not seen at the thickness. For the wafer W not shown in the graph in Comparative Example 3, similarly to the wafer W shown in the graph, the variation in film thickness in the plane is larger than that of each wafer W of Example 3, and the wafer The difference in film thickness was largely observed between (W), and the thickness of the wafer W tended to increase as the wafer W treated on the rear side.

Therefore, also from this Example 3 and the comparative example 3, when the resist coating apparatus 2 performs the coating process continuous to the wafer W, the nonuniformity of the film thickness profile in the inside of the wafer W surface, and the wafer W It can be said that the nonuniformity of the average film thickness in the liver can be suppressed.

1 is a vertical plan view of a resist coating apparatus according to an embodiment of the present invention.

2 is a cross-sectional plan view of the resist coating apparatus.

3 is a block diagram of a control unit provided in the resist coating apparatus.

4 is a graph showing the relationship between the rotational speed of each wafer W and time.

5 is a flowchart of the processing of the first wafer W. FIG.

6 is a flowchart of processing of the wafer W after the second sheet.

7 is a process chart showing a procedure of forming a resist on a wafer.

8 is a process chart showing a procedure of forming a resist on a wafer.

9 is a plan view of a coating and developing apparatus including the resist coating apparatus.

10 is a perspective view of the coating and developing apparatus.

11 is a vertical plan view of the coating and developing apparatus.

12 is a graph showing the results of Examples and Comparative Examples.

13 is a graph showing the results of Examples and Comparative Examples.

14 is a graph showing the results of Examples and Comparative Examples.

It is explanatory drawing which shows the coating film formed by the conventional coating method.

[Description of the code]

W: semiconductor wafer

R: resist

2: resist coating device

22: rotation drive unit

24: cup

31: resist liquid nozzle

41: solvent nozzle

51: Radiation Thermometer

52: radiation thermometer

6: control unit

61: program

64: work memory

7: coating and developing apparatus

73: resist coating module

Claims (12)

In the coating apparatus which adjusts the film thickness profile of a coating film by the rotation speed of a board | substrate at the time of apply | coating a coating liquid, and spins at the rotation speed lower than the said rotation speed, and performs the spin coating which adjusts the average film thickness of a coating film. , A substrate holding portion configured to hold the substrate horizontally and to rotate around the vertical axis by a rotating mechanism; First temperature measuring means for measuring a temperature of the substrate held by the substrate holding portion; The temperature measured by the first temperature measuring means before the coating treatment with respect to one substrate and the temperature measured by the first temperature measuring means before the coating treatment with respect to the subsequent substrate subjected to the coating treatment after the one substrate. Rotation for adjusting the film thickness profile of a coating film with respect to the said subsequent board | substrate based on a measured value, the rotation speed for adjusting the film thickness profile of the coating film in the coating process performed with respect to the said one board | substrate, and a predetermined constant. An applicator comprising a calculating unit for calculating the number. The method according to claim 1, further comprising second temperature measuring means for measuring a temperature of the substrate held by the substrate holding portion, The calculating section includes a temperature measurement value measured by the second temperature measuring means before the coating treatment on one substrate and the second temperature measuring means before the coating treatment on a subsequent substrate which is subjected to the coating treatment next to the one substrate. The average film thickness of the coating film with respect to the subsequent substrate on the basis of the temperature measurement measured by the above, the rotation speed for adjusting the average film thickness of the coating film in the coating process performed on the one substrate, and a predetermined constant. Applicator characterized in that it has a function to calculate the number of revolutions to adjust. The method of claim 2, wherein the calculating unit calculates the temperature difference between the temperature measurement of one substrate measured by the second temperature measuring means and the temperature measurement value of the subsequent substrate measured by the second warmth measuring means, and the temperature difference and the And a difference between the rotation speed for adjusting the average film thickness of the coating film on the subsequent substrate and the rotation speed for adjusting the average film thickness of the coating film on one substrate based on the constant. 4. An applicator as claimed in claim 2 or 3, wherein said second temperature measuring means measures the temperature of the central portion of the substrate. The temperature difference between the temperature measurement value of one substrate measured by the first temperature measuring means and the temperature measurement value of the subsequent substrate measured by the first temperature measuring means according to any one of claims 1 to 4. Calculate the difference between the rotation speed for adjusting the film thickness profile of the coating film on the subsequent substrate and the rotation speed for adjusting the film thickness profile of the coating film on one substrate based on the temperature difference and the constant. Applicator characterized in that. The coating device according to any one of claims 1 to 5, wherein the first temperature measuring means measures the temperature of the peripheral portion of the substrate. In the coating method which adjusts the film thickness profile of a coating film by the rotation speed of the board | substrate at the time of apply | coating a coating liquid, and spins at the rotation speed lower than the said rotation speed, and performs the spin coating which adjusts the average film thickness of a coating film. , Holding one substrate horizontally and rotating around the vertical axis in the substrate holding portion; Supplying a coating liquid to the one substrate to perform spin coating; Measuring the temperature by the first temperature measuring means before supplying the coating liquid to one substrate held by the substrate holding portion; A step of horizontally holding a subsequent substrate subjected to the coating treatment next to the one substrate to the substrate holding portion and rotating around the vertical axis; Supplying a coating liquid to the subsequent substrate to perform spin coating; Measuring the temperature by a first temperature measuring means before supplying the coating liquid to a subsequent substrate held in the substrate holding portion; A temperature measurement for one substrate measured by the first temperature measuring means, a temperature measurement for a subsequent substrate measured by the first temperature measuring means, and application in a coating treatment performed on the one substrate And a step of calculating a rotation speed for adjusting the film thickness profile of the film and a rotation speed for adjusting the film thickness profile of the coating film on the subsequent substrate based on a predetermined constant. 8. The process according to claim 7, wherein the temperature is measured by a second temperature measuring means before the coating liquid is supplied to one substrate held by the substrate holding portion; Measuring the temperature by the second temperature measuring means before supplying the coating liquid to the subsequent substrate held in the substrate holding portion; A temperature measurement for one substrate measured by the second temperature measuring means, a temperature measurement for a subsequent substrate measured by the second temperature measuring means, and application in a coating treatment performed on the one substrate And a step of calculating a rotation speed for adjusting the film thickness profile of the film and a rotation speed for adjusting the average film thickness of the coating film on the subsequent substrate based on a predetermined constant. The process according to claim 8, wherein the number of revolutions for adjusting the average film thickness of the coating film in the subsequent substrate is calculated. A temperature measurement of one substrate measured by the second temperature measuring means, Calculating a temperature difference between temperature measurements of a subsequent substrate, A step of calculating a difference between the rotation speed for adjusting the average film thickness of the coating film on the subsequent substrate and the rotation speed for adjusting the average film thickness of the coating film on one substrate based on the temperature difference and the constant Application method characterized in that. The process according to any one of claims 7 to 9, wherein in the step of calculating the rotation speed for adjusting the rotation speed for adjusting the film thickness profile of the coating film in the subsequent substrate, A temperature measurement value of one substrate measured by the first temperature measuring means, Calculating a temperature difference between temperature measurements of a subsequent substrate, Calculating a difference between the rotation speed for adjusting the film thickness profile of the coating film on the subsequent substrate and the rotation speed for adjusting the film thickness profile of the coating film on one substrate based on the temperature difference and the above constant. An application method characterized by the above-mentioned. A carrier block into which a carrier containing a substrate is carried; A processing block including an application portion for applying a resist to a surface of the substrate taken out from the carrier, a developing portion for developing the substrate after exposure, and In the coating and developing apparatus provided with the interface block which flips a board | substrate between this process block and the exposure apparatus which exposes the board | substrate with which the resist was apply | coated, The coating and developing apparatus provided with the coating apparatus as described in any one of Claims 1-6 as said application | coating part. A storage medium for storing a computer program used in a coating apparatus for supplying a coating liquid to a rotating substrate to form a coating film, The said computer program is a storage medium in which the group of steps for performing the application | coating method of any one of Claims 7-10 is assembled.

Images